CN204102724U - Graphene ultracapacitor and energy-storage system - Google Patents
Graphene ultracapacitor and energy-storage system Download PDFInfo
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- CN204102724U CN204102724U CN201420399635.9U CN201420399635U CN204102724U CN 204102724 U CN204102724 U CN 204102724U CN 201420399635 U CN201420399635 U CN 201420399635U CN 204102724 U CN204102724 U CN 204102724U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E60/13—Energy storage using capacitors
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Abstract
The utility model discloses a kind of Graphene ultracapacitor and energy-storage system, wherein, Graphene ultracapacitor comprises: make two pads on a printed circuit, respectively as the first collector substrate and the second collector substrate of Graphene ultracapacitor; Patterned first Graphene electrodes and second Graphene electrodes that the graphite oxide film that is coated with region makes is dripped by laser engraving reduction treatment waiting of being positioned at that the first collector substrate and the second collector substrate formed, wherein, graphite oxide film is formed by after graphite oxide solution drying and moulding; And encapsulating structure, the first Graphene electrodes and the second Graphene electrodes and electrolyte are encapsulated as Graphene ultracapacitor by encapsulating structure.According to this programme, utilize pad on printed circuit board (PCB) as collector substrate, optimize the preparation technology of Graphene ultracapacitor, save welding sequence, improve the integrated level of printed circuit board (PCB).
Description
Technical field
The utility model relates to field of electrical components, particularly a kind of Graphene ultracapacitor and energy-storage system.
Background technology
At present, in accumulator, the general energy storage device adopted is ultracapacitor, lithium battery, lead-acid battery etc.And usually using ultracapacitor as one-level energy-storage units, lithium battery is as secondary energy-storage units.The uniqueness that ultracapacitor has in energy savings and dispose procedure, not only be presented as burst rate charge and discharge process, also there is the advantage of high-energy and high-specific-power simultaneously, be i.e. discharge and recharge time only tens of second, its power density, compared with storage battery, exceeds 10 ~ 100 times.
Because Graphene is a kind ofly carried out arranging and the carbon molecule be interconnected according to hexagon by carbon atom, its structure is highly stable, and there is the features such as high conductivity, high tenacity, high strength, extra specific surface area, make the ultracapacitor using Graphene as electrode material show excellent performance, be more suitable for the storage of energy.
Common utilizes the energy-storage system of Graphene ultracapacitor with PCB (printed circuit board (PCB)) for carrier, mounting circuit element and Graphene ultracapacitor on PCB, Graphene ultracapacitor and PCB external harmoniousness, the Graphene ultracapacitor being about to complete is arranged on PCB.
The mode of this external harmoniousness, first, need to carry out secondary encapsulation to independently Graphene ultracapacitor, namely electronic devices and components encapsulation is carried out to Graphene ultracapacitor, be welded on PCB by the Graphene ultracapacitor after secondary encapsulation, cost is higher, and to cause Graphene ultracapacitor to take up room excessive due to secondary encapsulation, the integrated level of energy-storage system is lower, and space availability ratio is low.
Utility model content
The purpose of this utility model is the defect for prior art, a kind of Graphene ultracapacitor and energy-storage system are proposed, accumulator and Graphene ultracapacitor are directly carried out inside integrated, Graphene ultracapacitor directly makes on a printed circuit, save welding sequence, and packaging cost, improve the integrated level of energy-storage system.
According to an aspect of the present utility model, provide a kind of Graphene ultracapacitor made on a printed circuit, comprise: make two pads on a printed circuit, respectively as the first collector substrate and the second collector substrate of Graphene ultracapacitor; Patterned first Graphene electrodes and second Graphene electrodes that the graphite oxide film that is coated with region makes is dripped by laser engraving reduction treatment waiting of being positioned at that the first collector substrate and the second collector substrate formed, wherein, graphite oxide film is formed by after graphite oxide solution drying and moulding; And encapsulating structure, the first Graphene electrodes and the second Graphene electrodes and electrolyte are encapsulated as Graphene ultracapacitor by encapsulating structure.
According to another aspect of the present utility model, provide a kind of energy-storage system, comprising: the printed circuit board (PCB) being provided with reserved area, described reserved area is manufactured with above-mentioned Graphene ultracapacitor; Printed circuit board (PCB) is configured with further: rectifier cell and filter element; Wherein, the input/output terminal of filter element is connected with the output of rectifier cell, and the input/output terminal of filter element is connected with the second Graphene electrodes with the first Graphene electrodes of Graphene ultracapacitor respectively; Energy-storage system also comprises: nano generator; The output of nano generator is connected with the input of the rectifier cell on printed circuit board (PCB).
According to Graphene ultracapacitor of the present utility model and energy-storage system, utilize pad on printed circuit board (PCB) as collector substrate, optimize Graphene ultracapacitor preparation technology, directly make the Graphene ultracapacitor with printed conductor with electrical connection on a printed circuit, save welding sequence, further, the significant spatial that the Graphene ultracapacitor of filming takies reduces.
Accompanying drawing explanation
Fig. 1 shows the flow chart of the preparation method of the Graphene ultracapacitor that the utility model embodiment provides;
Fig. 2 shows the flow chart of the preparation method of the Graphene ultracapacitor that another embodiment of the utility model provides;
Fig. 3 shows the flow chart of the preparation method of the Graphene ultracapacitor that another embodiment of the utility model provides;
Fig. 4 a shows the structural representation of the making Graphene ultracapacitor on a printed circuit that the utility model embodiment provides;
Fig. 4 b shows the structural representation of the making Graphene ultracapacitor on a printed circuit that the utility model preferred embodiment provides;
Fig. 5 shows the structural representation of the making Graphene ultracapacitor on a printed circuit that another embodiment of the utility model provides;
Fig. 6 shows the charge graph of the Graphene ultracapacitor that the utility model provides;
Fig. 7 shows the block diagram of the energy-storage system that the utility model embodiment provides.
Embodiment
For fully understanding the object of the utility model, feature and effect, by following concrete execution mode, the utility model is elaborated, but the utility model is not restricted to this.
Fig. 1 shows the flow chart of the preparation method of the Graphene ultracapacitor of the utility model embodiment, and as shown in Figure 1, method comprises the steps:
Step S110, makes two pads on a printed circuit as the first collector substrate of Graphene ultracapacitor and the second collector substrate.
According to the size of the Graphene ultracapacitor that will prepare and electrode shape etc., determine relative position and the size of pad, the region of reserved suitable size, makes the pad of suitable shape and size on a printed circuit.
The material of pad is generally Copper Foil, and conductivity is high, is the suitable selection as current collector of super capacitor material.The utility model utilizes the pad on printed circuit board (PCB) as the collector substrate of ultracapacitor, compared with external harmoniousness mode, saves current collector material on the one hand, makes Graphene ultracapacitor more frivolous; On the other hand, because pad is directly connected with the wiring layer on printed circuit board (PCB), make the first collector substrate and the second collector substrate as the exit of Graphene ultracapacitor, be electrically connected by other elements on printed conductor and printed circuit board (PCB), this not only eliminates conventional graphite alkene ultracapacitor and the integrated welding process of circuit board, it also avoid the electric encapsulation to Graphene ultracapacitor, significantly reduce taking up room of Graphene ultracapacitor.
Step S120, what formed at the first collector substrate and the second collector substrate waits to drip a painting graphite oxide solution in painting region.
First, preparation graphite oxide solution, those skilled in the art can obtain graphite oxide solution in several ways, do not limit herein.Such as, the Hummer method of Hummer method or improvement can be used to prepare graphite oxide, then utilize this graphite oxide to prepare the graphite oxide solution being applicable to concentration, such as, graphite oxide solution concentration is 2.7mg/ml, 5mg/ml etc.
Particularly, ultrasonic disperse process can also be carried out to graphite oxide solution further.Wherein, the Main Function of ultrasonic disperse process is: make being separated from each other between layers in the graphite oxide solution of multilayer, thus changes the graphite oxide solution of individual layer (or the number of plies is less) into.Preferably, the time of ultrasonic disperse process is 5-10 minute.
Select to wait to drip to be coated with a region according to the size of the Graphene ultracapacitor that will make and electrode shape, such as, for the Graphene ultracapacitor of parallel strip, wait that dripping painting region is first, second collector substrate surface, for interdigitated Graphene ultracapacitor, wait to drip that to be coated with region be printed circuit board surface between first, second collector substrate or the printed circuit board surface between first, second collector substrate and the subregion on first, second collector substrate surface.
Step S130, carries out laser engraving reduction treatment to the graphite oxide film formed after graphite oxide solution drying and moulding, obtains patterned first Graphene electrodes and the second Graphene electrodes.
First, drying and moulding process is carried out to dripping the graphite oxide solution be coated with.Wait that dripping the graphite oxide solution be coated with in region surface places a period of time naturally by dripping to be coated in, make its bone dry, or carry out drying in drying box, preferably, the temperature in drying box is 30 DEG C-50 DEG C, and drying time is 0.5h-10h.In dry run, the solvent evaporation in graphite oxide solution, remaining solute is attached to be treated, on a surface being coated with region, to form the graphite oxide film of dry solidification.
The graphite oxide film formed after graphite oxide solution drying and moulding is engraved as default electrode pattern, and such as, interdigitated, parallel strip, helical form etc., make graphite oxide film be reduced to graphene film simultaneously.Particularly, can irradiate with the infrared laser with predetermined wavelength (such as 780nm).In addition, power bracket and the running parameter such as carving speed of setting laser engraving can be come according to the thickness of graphite oxide film.When the thickness of graphite oxide film is thicker, power and the speed of laser engraving suitably can be increased; Otherwise, suitably can reduce power and the speed of laser engraving.Preferably, the power bracket of laser engraving is 2.5W-6W, and carving speed is 20mm/s-200mm/s.
Step S140, filling electrolyte also encapsulates the first Graphene electrodes and the second Graphene electrodes, forms Graphene ultracapacitor.
Particularly, with reference to packaged type of the prior art, such as, PDMS (dimethyl silicone polymer) can be adopted to encapsulate, repeats no more herein.
Fig. 2 shows the flow chart of the preparation method of the Graphene ultracapacitor according to another embodiment of the utility model, and this embodiment is specially the method for the Graphene ultracapacitor of preparation parallel strip, and as shown in Figure 2, method comprises the steps:
Step S210, the pad making two parallel pre-set dimension is on a printed circuit as the first collector substrate of Graphene ultracapacitor and the second collector substrate.
The present embodiment prepares the Graphene ultracapacitor of parallel strip, the size of capacitance size determination pad as required, two pads are close to each other, spacing is generally 0.4mm-1mm, unsuitable excessive or too small, if spacing is too small, easily cause the short circuit between Graphene electrodes, spacing is excessive, be then unfavorable for ion migration in-between the electrodes, increases the discharge and recharge time of Graphene ultracapacitor.
According to real needs determination capacitance, and then determine the size of pad, such as, for low-power scm chip, capacitance size can be selected to be the Graphene ultracapacitor of 5-10mF, at this moment, the overall dimensions scope of Graphene ultracapacitor is generally between 3mm × 8mm-10mm × 20mm, then the size of each Graphene electrodes is between 3mm × 4mm-10mm × 10mm, pad size can slightly larger than electrode size, redundance can be used for preparation conductive silver paint etc., refers to the description in subsequent step.Certainly, above-mentioned numerical value can according to the supply voltage on printed circuit board (PCB) needed for integrated circuit component, and power consumption situation etc. adjust.
Step S220, the mould adopting PET (PETG) or PMMA (polymethyl methacrylate) to be made into is set at the first collector substrate and the second collector substrate perimeter, wherein, the thickness of PET or PMMA is 0.1mm-1mm.
PET mould or PMMA mould are for limiting waiting to drip and being coated with a region of graphite oxide solution.Particularly, by the mode such as bonding, by PET mould or PMMA mold ring, treating on the first collector substrate and the second collector substrate drips that to be coated with region bonding.Certainly, also can adopt the mould of other materials, such as, adopt the Kapton Tape of suitable thickness.
Step S230, graphite oxide solution is dripped be coated in that PET mould or PMMA mould formed wait to drip and be coated with in region.
In the utility model embodiment, Copper Foil on pad and the direct bump contact of graphite oxide solution, in dry run, Copper Foil can not only play the effect of prereduction graphite oxide, can also prevent graphite oxide from reduction process, occurring agglomeration, further, a small amount of copper enters in graphite oxide solution, can improve the conductivity of the Graphene electrodes of reducing in subsequent step.
The consumption of graphite oxide solution is according to the concentration of graphite oxide solution, and the size of the Graphene ultracapacitor that will prepare is determined, for 8mf Graphene ultracapacitor, the size of first, second Graphene electrodes is all 4mm × 4mm, the concentration of graphite oxide solution is 5mg/ml, then can select on first, second collector substrate, drip the graphite oxide solution being coated with 0.01ml respectively.
Step S240, throws off PET mould or PMMA mould.
After graphite oxide solution drying and moulding, throw off PET mould or PMMA mould.
This step is optional step, and if do not thrown off PET mould or PMMA mould, PET mould or PMMA mould can be used for forming section encapsulating structure, forms the cavity holding electrolyte, plays the effect being similar to bed course sheet.
Step S250, is reduced to the first Graphene electrodes and second Graphene electrodes of parallel strip by the graphite oxide membrane laser engraving on the first collector substrate and the second collector substrate surface.
Because Graphene has the specific area of high conductivity and super large, the Graphene after laser engraving reduction directly can be used as the electrode of Graphene ultracapacitor.
In the utility model embodiment, the first Graphene electrodes of parallel strip and the second Graphene electrodes and the first collector substrate and the second collector substrate contact area comparatively large, there is stronger charge-trapping effect.
Step S260, brushes the first conductive silver paint and the second conductive silver paint respectively at the outlet side of the first Graphene electrodes and the second Graphene electrodes.
Wherein, the first conductive silver paint and the first Graphene electrodes and the first collector substrate contact, the second conductive silver paint and the second Graphene electrodes and the second collector substrate contact.The outlet side of the first Graphene electrodes and the second Graphene electrodes refers to the side being directly subject to laser engraving reduction treatment corresponding to the graphite oxide film on first, second collector substrate.
Conductive silver paint is used as extraction electrode, for improving the charge-trapping characteristic of Graphene electrodes further.Because first, second Graphene electrodes outlet side directly receives laser engraving reduction treatment, compared with the side contacted with same collector substrate, reducing degree is higher, possesses better performance, such as, have higher conductivity, specific area is larger, therefore, ensure that high performance electrical connection between Graphene electrodes and collector substrate.
Step S270, puts into glove box by the printed circuit board (PCB) being manufactured with the first Graphene electrodes and the second Graphene electrodes, to the first Graphene electrodes and the second Graphene electrodes area filling electrolyte.
Electrolyte can adopt usual the adopted electrolyte solution of Graphene ultracapacitor, such as the electrolyte etc. of polyvinyl alcohol/sulfuric acid system, polyvinyl alcohol/Phosphoric Acid.
The utility model adopts ionic liquid as electrolyte solution, and compared with above-mentioned common aqueous electrolyte solution, ionic liquid has higher ionic conductivity and thermal stability, makes the charge/discharge rates that ultracapacitor reaches higher.In the utility model, after being mixed with polymer or nano silicon by ionic liquid, form gelatinous electrolyte, larger discharge and recharge can not only be obtained interval, electrolyte can also be avoided to reveal, be convenient to the encapsulation of Graphene ultracapacitor.
Particularly, the consumption of nano silicon is determined according to electrolytical viscosity, and one intuitively method is, loaded in bottle by above-mentioned semisolid mixture, after handstand, ionic liquid does not have obvious dirty sign.
Electrolyte in the present embodiment can select the two fluoroform sulfimide salt of 1-butyl-3-methylimidazole and nano silicon, the two fluoroform sulfimide salt of 1-ethyl-3-methylimidazole and nano silicon, the two fluoroform sulfimide salt of 1-butyl-2,3-methylimidazole and nano silicon.Preferably, the present embodiment selects electrolyte to be the semisolid mixture of the two fluoroform sulfimide ionic liquid of 1-butyl-3-methylimidazole and nano silicon, wherein, the mass ratio of the two fluoroform sulfimide ionic liquid of 1-butyl-3-methylimidazole and nano silicon is 100:3.
Step S280, is packaged into Graphene ultracapacitor by the first Graphene electrodes and the second Graphene electrodes that are filled with electrolyte.
After filling electrolyte, leave standstill a period of time, the abundant impregnated electrode of electrolyte and unnecessary moisture evaporation after, encapsulate by the first Graphene electrodes, the second Graphene electrodes and electrolyte.
Fig. 3 shows the flow chart of the preparation method of the Graphene ultracapacitor according to another embodiment of the utility model, and this embodiment is specially the method for the Graphene ultracapacitor of preparation interdigitated, and as shown in Figure 3, method comprises the steps:
Step S310, makes two pads with default relative position on a printed circuit as the first collector substrate of Graphene ultracapacitor and the second collector substrate.
The surface of insulating layer of the printed circuit board surface of the utility model between the first collector substrate and the second collector substrate makes Graphene electrodes, and the size of the Graphene ultracapacitor made as required determines the relative position preset of first, second Graphene electrodes.Compared with a upper embodiment, the size of first, second collector substrate is not strict with.
Step S320, what the subregion of the printed circuit board (PCB) between the printed circuit board (PCB) between the first collector substrate and the second collector substrate or the first collector substrate, the second collector substrate and the first collector substrate, the second collector substrate was formed waits to drip to be coated with around region to arrange PET mould or PMMA mould.
Particularly, what the subregion of the printed circuit board (PCB) between the printed circuit board (PCB) between the first collector substrate and the second collector substrate or the first collector substrate, the second collector substrate and the first collector substrate, the second collector substrate was formed wait to drip is coated with the mould arranging around region and adopt PET (PETG) or PMMA (polymethyl methacrylate) to be made into, wherein, the thickness of PET or PMMA is 0.1mm-1mm.This step is optional step, and its effect is identical with the PET mould shown in Fig. 2 or PMMA mould, repeats no more herein.
Step S330, graphite oxide solution is dripped be coated in that PET mould or PMMA mould formed wait to drip and be coated with in region.
Graphite oxide solution wait drip be coated with a region can not overlap with first, second collector substrate, namely treat that a painting region is the printed circuit board (PCB) between first, second collector substrate, at this moment, also must prepare other extraction electrode, play the effect of collecting electric charge, and Graphene electrodes is connected with collector substrate, and then be electrically connected by printed conductor and other elements.About extraction electrode, refer to described in step S360.
Graphite oxide solution wait drip be coated with a region also can overlap with first, second collector substrate portions, namely wait to drip that to be coated with region be the region that the subregion of printed circuit board (PCB) between first, second collector substrate and first, second collector substrate is formed, first, second Graphene electrodes then formed after laser engraving reduction treatment directly contacts with first, second collector substrate respectively, and first, second collector substrate plays the effect of collecting electric charge.Wherein, the subregion of first, second collector substrate refers to first, second collector substrate and a part that the graphite oxide solution be coated with overlaps.Certainly, in such cases, also can extraction electrode be set, for improving the charge-trapping characteristic of Graphene electrodes further.
The consumption of graphite oxide solution can refer to an embodiment, repeats no more herein.
Step S340, throws off PET mould or PMMA mould.
After graphite solution drying and moulding to be oxidized, PET mould or PMMA mould can be thrown off; Or, PET mould or PMMA mould are retained, as partial encapsulation structure.
Step S350, is reduced to the first Graphene electrodes and second Graphene electrodes of interdigitated by the graphite oxide membrane laser engraving after the graphite oxide solution drying and moulding between the first collector substrate and the second collector substrate.
Due to the insulation property that it is higher, the isolation between graphite oxide achieves positive and negative Graphene interdigital electrode, can save the membrane configuration in conventional graphite alkene ultracapacitor, thus preparation technology is simplified.
First Graphene electrodes of interdigitated and the second Graphene electrodes can increase the electrochemical surface area of Graphene ultracapacitor, compared with the Graphene ultracapacitor of the parallel strip-like electrodes of same size, improve memory capacity and power density.
Further, when the size of Graphene ultracapacitor is microminiaturized, the increase of interdigital quantity, can make the motion path of ion between adjacent two interdigital electrodes reduce, significantly reduce the discharge and recharge time of Graphene ultracapacitor.
Step S360, brushes the first conductive silver paint and the second conductive silver paint respectively at the outlet side of the first Graphene electrodes and the second Graphene electrodes.
Wherein, the first conductive silver paint and the first Graphene electrodes and the first collector substrate contact, the second conductive silver paint and the second Graphene electrodes and the second collector substrate contact.
Identical with a upper embodiment, the outlet side of the first Graphene electrodes and the second Graphene electrodes refers to the side being directly subject to laser engraving reduction treatment corresponding to the graphite oxide film between first, second collector substrate, and its effect is also identical with a upper embodiment, repeats no more herein.
If in step S330, the waiting to drip of graphite oxide solution is coated with region and first, second collector substrate and partially overlaps, first, second Graphene electrodes then formed respectively with first, second collector substrate contact, at this moment, this step S360 is optional step, can be used for strengthening charge-trapping effect further.
Step S370, puts into glove box by the printed circuit board (PCB) being manufactured with the first Graphene electrodes and the second Graphene electrodes, to the first Graphene electrodes and the second Graphene electrodes area filling electrolyte.
The selection of electrolyte, see a upper embodiment step S270, repeats no more herein.
Step S380, is packaged into Graphene ultracapacitor by the first Graphene electrodes and the second Graphene electrodes that are filled with electrolyte.
According to the preparation method of the Graphene ultracapacitor of the utility model above-described embodiment, utilize the pad on printed circuit board (PCB) as the collector substrate of ultracapacitor, make the Graphene ultracapacitor of planar structure, the inside achieving other circuit elements on Graphene ultracapacitor and printed circuit is integrated.Eliminate welding process, avoid the electric encapsulation to Graphene ultracapacitor, significantly reduce taking up room of Graphene ultracapacitor.
The utility model additionally provides a kind of Graphene ultracapacitor made on a printed circuit, preparation method according to above-mentioned Graphene ultracapacitor makes, comprise: make two pads on a printed circuit, respectively as the first collector substrate and the second collector substrate of Graphene ultracapacitor; Patterned first Graphene electrodes and second Graphene electrodes that the graphite oxide film that is coated with region makes is dripped by laser engraving reduction treatment waiting of being positioned at that the first collector substrate and the second collector substrate formed, wherein, graphite oxide film is formed by after graphite oxide solution drying and moulding; And encapsulating structure, the first Graphene electrodes and the second Graphene electrodes are encapsulated as Graphene ultracapacitor by encapsulating structure.
Fig. 4 a shows the structural representation of the making Graphene ultracapacitor on a printed circuit that the utility model embodiment provides, as shown in fig. 4 a, Graphene ultracapacitor comprises: the first Graphene electrodes 41A of parallel strip and the second Graphene electrodes 42A, lays respectively on the first collector substrate 43A and the second collector substrate 44A; Then in this embodiment, wait that dripping painting region is that the first collector substrate 43A and the second collector substrate 44A drip the surface scribbling graphite oxide solution; Wherein, the first collector substrate 43A and the second collector substrate 44A makes the pad with pre-set dimension on a printed circuit; Spacing 47A is left between first collector substrate 43A and the second collector substrate 43B, this spacing 47A is generally 0.4mm-1mm, unsuitable excessive or too small, if spacing 47A is less than 0.4mm, easily cause the short circuit between the first Graphene electrodes 41A and the second Graphene electrodes 42A, if spacing 47A is excessive, be then unfavorable for ion migration in-between the electrodes, this can increase the discharge and recharge time of Graphene ultracapacitor.Alternatively, Graphene ultracapacitor also comprises: be positioned at the first conductive silver paint 4A5 of the first Graphene electrodes 41A outlet side and be positioned at the second conductive silver paint 46A of the second Graphene electrodes 42A outlet side; First conductive silver paint 45A contacts with the first collector substrate 43A with the first Graphene electrodes 41A, and the second conductive silver paint 46A contacts with the second collector substrate 44A with the second Graphene electrodes 42A.Wherein, the first Graphene electrodes 41A outlet side and the second Graphene electrodes 42A outlet side refer to the side directly accepting laser engraving.
First conductive silver paint 45A and the second conductive silver paint 46A is mainly used in improving charge-trapping characteristic and ensureing electrical contact good between Graphene and collector substrate.Because Graphene itself has high conductivity, can according to circumstances, select to omit conductive silver paint.
Fig. 4 b shows the structural representation of the making Graphene ultracapacitor on a printed circuit that the utility model preferred embodiment provides, as shown in Figure 4 b, first Graphene electrodes 41B's and the second Graphene electrodes 42B is measure-alike, be all 4mm × 4mm, first collector substrate 43B and the second collector substrate 44B is of a size of 4mm × 6mm, spacing between first collector substrate 43B and the second collector substrate 44B is 0.4mm, it can thus be appreciated that the Graphene ultracapacitor of formation is of a size of 4mm × 8.4mm.Alternatively, first collector substrate 43B and the second collector substrate 44B are manufactured with the first conductive silver paint 45B and the second conductive silver paint 46B respectively, first conductive silver paint 45B, by the first Graphene electrodes 41B and the first collector substrate 43B not making the joint area of Graphene electrodes, further increases charge-trapping ability.
In the preferred embodiment, the capacitance size of Graphene ultracapacitor is 8mF, and the concentration of the graphite oxide solution of employing is 5mg/ml.It should be understood that the size of Graphene electrodes and collector substrate is relevant with the concentration of the graphite oxide solution of employing, this is because when graphite oxide solution change in concentration, the compactness extent of obtained Graphene, specific area is different.The size of collector substrate and Graphene electrodes can be adjusted according to actual conditions.
The encapsulating structure of not shown Graphene ultracapacitor in Fig. 4 a, 4b, and the electrolyte etc. of filling.Particularly, can, with reference to packaged type of the prior art, such as, PDMS (dimethyl silicone polymer) be adopted to encapsulate.Alternatively, the PET mould arranged before graphite oxide solution drips painting or PMMA mould retain or part reservation, as partial encapsulation structure.
Electrolyte in the present embodiment can select the two fluoroform sulfimide salt of 1-butyl-3-methylimidazole and nano silicon, the two fluoroform sulfimide salt of 1-ethyl-3-methylimidazole and nano silicon, the two fluoroform sulfimide salt of 1-butyl-2,3-methylimidazole and nano silicon.Preferably, the present embodiment selects electrolyte to be the semisolid mixture of the two fluoroform sulfimide ionic liquid of 1-butyl 3-methylimidazole and nano silicon, wherein, the mass ratio of the two fluoroform sulfimide ionic liquid of 1-butyl 3-methylimidazole and nano silicon is 100:3.
Fig. 5 shows the structural representation of the making Graphene ultracapacitor on a printed circuit that another embodiment of the utility model provides, as shown in Figure 5, Graphene ultracapacitor comprises: the first Graphene electrodes 51 and the second Graphene electrodes 52 of interdigitated, on first Graphene electrodes 51 and the printed circuit board (PCB) of the second Graphene electrodes 52 between the first collector substrate 53 and the second collector substrate 54, namely in this embodiment, treat described in that a painting region is the printed circuit board (PCB) between the first collector substrate 53 and the second collector substrate 54; First collector substrate 53 and the second collector substrate 54 are make two pads with default relative position on a printed circuit; Relative position is determined according to the size of required Graphene ultracapacitor.
In a kind of situation of the present embodiment, first Graphene electrodes 51, second Graphene electrodes 52 contacts with the first collector substrate 53, second collector substrate 54 respectively, at this moment, alternatively, Graphene ultracapacitor also comprises: be positioned at the first conductive silver paint 55 of the first Graphene electrodes 51 outlet side and be positioned at the second conductive silver paint 56 of the second Graphene electrodes 52 outlet side; First conductive silver paint 55 contacts with the first collector substrate 53 with the first Graphene electrodes 51, and the second conductive silver paint 56 contacts with the second collector substrate 54 with the second Graphene electrodes 52.
Outlet side refers to the side being directly subject to laser engraving reduction treatment corresponding to graphite oxide film, i.e. the upper surface of first, second Graphene electrodes visible in Fig. 5.
In the another kind of situation of the utility model embodiment, first Graphene electrodes 51 and the second Graphene electrodes 52 do not contact with the first collector substrate 53, second collector substrate 54, then Graphene ultracapacitor must comprise the first above-mentioned conductive silver paint 55 and the second conductive silver paint 56, to collect electric charge and to set up the electrical connection between Graphene electrodes and collector substrate.
Certainly, embodiment according to Fig. 3, the first Graphene electrodes 51 in this example and the second Graphene electrodes 52 also can contact with the second collector substrate 54 with the first collector substrate 53 respectively, now, first conductive silver paint 55 and the second conductive silver paint 56 are selective sections, its effect, with the embodiment shown in Fig. 3, repeats no more herein.
Encapsulating structure and electrolyte are selected identical with a upper embodiment, repeat no more herein.
Compared with a upper embodiment, the first Graphene electrodes of interdigitated and the second Graphene electrodes can increase the electrochemical surface area of Graphene ultracapacitor, improve memory capacity and power density.Fig. 6 shows the charge graph of a kind of Graphene ultracapacitor according to the utility model above-described embodiment, and this Graphene ultracapacitor is of a size of: long 4mm × wide 8mm × high 2mm, height 2mm comprise electrolyte solidify after thickness.In figure 6, curve A, B represents charging curve when Graphene ultracapacitor of the present utility model being charged to 1V and 2V with constant current 50 μ A respectively, visible, charging curve is typical capacitance characteristic, and charging to 1V required time is about 160s, can calculate, capacitance is about 8.35mF.
Visible, the Graphene ultracapacitor that the utility model provides has excellent charge-discharge characteristic.
The utility model additionally provides a kind of energy-storage system comprising Graphene ultracapacitor, comprise: with the printed circuit board (PCB) of Graphene ultracapacitor, particularly, when designing printed circuit board, the reserved area preparing Graphene ultracapacitor is set thereon, after circuit board making completes, make above-mentioned Graphene ultracapacitor in reserved area.Fig. 7 shows the block diagram of the energy-storage system that the utility model embodiment provides.As shown in Figure 7, system comprises:
With the printed circuit board (PCB) 71 of Graphene ultracapacitor 710; Printed circuit board (PCB) 71 is configured with further: rectifier cell 711 and filter element 712; Wherein, the input/output terminal 712A of filter element, 712B are connected with the output 711B of rectifier cell, 711D correspondence respectively, the input/output terminal 712A of filter element, 712B are connected with the second collector substrate 710B with the first collector substrate 710A of Graphene ultracapacitor 710 respectively; Energy-storage system also comprises: nano generator 72; The output 72A of nano generator 72,72B are connected with the input 711A of the rectifier cell 711 on printed circuit board (PCB), 711C correspondence respectively.
The energy-storage system that the present embodiment provides can be used for the electronic system realizing having self-powered function, for low-power scm chip, clock chip, above-mentioned two kinds of chips are required drive components and parts energy density and power density all less, be applicable to adopting the integrated capacitance of printed circuit board (PCB) to be about the compact ultracapacitor of about 5-10mF as energy source, the electricity produced by nano generator stores, further combined with voltage conversion circuit etc., sustainedly and stably for singlechip chip provides required supply voltage.
By the parallel strip Graphene ultracapacitor of about the 5-10mF of embodiment method design corresponding to Fig. 2, the size range of capacitor can be controlled between 3mm × 8mm-10mm × 20mm, particularly, different according to the thin concentration of graphite oxide used, select suitable capacitor sizes.
Nano generator 72 in the present embodiment can adopt friction generator of the prior art and/or Zinc oxide nanometer power generator, and those skilled in the art can select as required, do not limit herein.Such as: friction generator can be three-decker, four-layer structure and five-layer structure.The friction generator of each Rotating fields at least comprises two surfaces forming frictional interface, and at least one formation in two surfaces of frictional interface is provided with micro-nano structure on the surface, and friction generator has at least two outputs.Zinc oxide nanometer power generator can be four layers or five-layer structure, and it has two outputs.
In addition, nano generator 72 can be arranged on separately the outside of printed circuit board (PCB) 71, also can be arranged on printed circuit board (PCB) 71, integrate with it.When nano generator 72 integrates with printed circuit board (PCB) 71, stability and the reliability of whole energy-storage system work can not only be improved, effectively can also reduce the space shared by energy-storage system, those skilled in the art can select as required, do not limit herein.
For the energy-storage system shown in Fig. 7, its course of work is: External Force Acting when nano generator, nano generator generation mechanical deformation, thus produce exchange pulse electrical signal.First this pulse electrical signal exchanged inputs to rectifier cell, carries out rectification, obtain the direct current of unidirectional pulsation by rectifier cell to it.The direct current of this unidirectional pulsation inputs to again filter element and carries out filtering, the interference noise in the direct current of unidirectional pulsation is carried out filtering, obtains DC signal.Finally, this DC signal directly inputs to Graphene ultracapacitor and charges.Here can be a Graphene ultracapacitor charging, also can charge for the Graphene ultracapacitor of multiple parallel connection simultaneously.
According to the making Graphene ultracapacitor on a printed circuit that the utility model above-described embodiment provides, accumulator and Graphene ultracapacitor are directly carried out inside integrated, Graphene ultracapacitor directly makes on a printed circuit, improves the integrated level of energy-storage system.Because pad is directly connected with the wiring layer on printed circuit board (PCB), then the first collector substrate and the second collector substrate are as the exit of Graphene ultracapacitor, pass through copper conductor, other elements directly and on printed circuit board (PCB) are electrically connected, save welding sequence, and packaging cost, significantly reduce taking up room of Graphene ultracapacitor, utilize this Graphene ultracapacitor can obtain the energy-storage system of high integration.
Finally; what enumerate it is to be noted that above is only specific embodiment of the utility model; certain those skilled in the art can change and modification the utility model; if these amendments and modification belong within the scope of the utility model claim and equivalent technologies thereof, protection range of the present utility model all should be thought.
Claims (6)
1. a Graphene ultracapacitor, is characterized in that, comprising:
Make two pads on a printed circuit, respectively as the first collector substrate and the second collector substrate of described Graphene ultracapacitor;
Drip by laser engraving reduction treatment waiting of being positioned at that the first collector substrate and the second collector substrate formed patterned first Graphene electrodes and second Graphene electrodes that the graphite oxide film that is coated with region makes, described graphite oxide film is formed by after graphite oxide solution drying and moulding; And
Encapsulating structure, described first Graphene electrodes and the second Graphene electrodes and electrolyte are encapsulated as Graphene ultracapacitor by described encapsulating structure.
2. Graphene ultracapacitor according to claim 1, is characterized in that, described first Graphene electrodes and the second Graphene electrodes are parallel strip, lays respectively on the first collector substrate and the second collector substrate; Described first collector substrate is parallel with the second collector substrate and have default size.
3. Graphene ultracapacitor according to claim 1, it is characterized in that, described first Graphene electrodes and the second Graphene electrodes are interdigitated, on the surface that the subregion of the printed circuit board (PCB) between printed circuit board (PCB) between described first collector substrate and the second collector substrate of described first Graphene electrodes and the second Graphene electrodes or described first collector substrate, the second collector substrate and described first collector substrate, the second collector substrate is formed, described first collector and the second collector have default relative position.
4. Graphene ultracapacitor according to claim 1, is characterized in that, also comprise: be positioned at the first conductive silver paint of described first Graphene electrodes outlet side and be positioned at the second conductive silver paint of described second Graphene electrodes outlet side; Described first conductive silver paint and the first Graphene electrodes and the first collector substrate contact, described second conductive silver paint and the second Graphene electrodes and the second collector substrate contact.
5. Graphene ultracapacitor according to claim 1, it is characterized in that, described encapsulating structure comprises further: treat around described the mould that an employing PETG being coated with region setting or polymethyl methacrylate are made into, wherein, the thickness of PETG or polymethyl methacrylate is 0.1mm-1mm.
6. an energy-storage system, is characterized in that, comprising: the printed circuit board (PCB) being provided with reserved area, described reserved area is manufactured with the Graphene ultracapacitor described in any one of claim 1-5;
Described printed circuit board (PCB) is configured with further: rectifier cell and filter element; Wherein,
The input/output terminal of described filter element is connected with the output of described rectifier cell, and the input/output terminal of described filter element is connected with the second collector substrate with the first collector substrate of described Graphene ultracapacitor;
Described energy-storage system also comprises: nano generator;
The output of described nano generator is connected with the input of the rectifier cell on described printed circuit board (PCB).
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| CN104637694A (en) * | 2015-02-03 | 2015-05-20 | 武汉理工大学 | Micro super capacitor nano-device based on porous graphene-supported polyaniline heterostructure and manufacturing method thereof |
| CN104810163A (en) * | 2014-07-18 | 2015-07-29 | 纳米新能源（唐山）有限责任公司 | Graphene supercapacitor and preparation method thereof, and energy storage system |
| WO2016150306A1 (en) * | 2015-03-20 | 2016-09-29 | 飞天诚信科技股份有限公司 | Battery and electronic device comprising said battery |
| CN108074752A (en) * | 2016-11-10 | 2018-05-25 | 中国科学院大连化学物理研究所 | A kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor |
| CN110260893A (en) * | 2019-06-18 | 2019-09-20 | 广东工业大学 | A kind of preparation method of condenser type flexible sensor |
| CN114054969A (en) * | 2021-11-30 | 2022-02-18 | 哈尔滨工业大学 | Ultrafast laser processing method of flexible asymmetric electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104810163A (en) * | 2014-07-18 | 2015-07-29 | 纳米新能源（唐山）有限责任公司 | Graphene supercapacitor and preparation method thereof, and energy storage system |
| CN104810163B (en) * | 2014-07-18 | 2017-08-08 | 纳米新能源（唐山）有限责任公司 | Preparation method, graphene ultracapacitor and the energy-storage system of graphene ultracapacitor |
| CN104637694A (en) * | 2015-02-03 | 2015-05-20 | 武汉理工大学 | Micro super capacitor nano-device based on porous graphene-supported polyaniline heterostructure and manufacturing method thereof |
| WO2016150306A1 (en) * | 2015-03-20 | 2016-09-29 | 飞天诚信科技股份有限公司 | Battery and electronic device comprising said battery |
| CN108074752A (en) * | 2016-11-10 | 2018-05-25 | 中国科学院大连化学物理研究所 | A kind of method that photoreduction met hod prepares graphene-based planarization micro super capacitor |
| CN110260893A (en) * | 2019-06-18 | 2019-09-20 | 广东工业大学 | A kind of preparation method of condenser type flexible sensor |
| CN110260893B (en) * | 2019-06-18 | 2022-05-10 | 广东工业大学 | Preparation method of capacitive flexible sensor |
| CN114054969A (en) * | 2021-11-30 | 2022-02-18 | 哈尔滨工业大学 | Ultrafast laser processing method of flexible asymmetric electrode |
| CN114054969B (en) * | 2021-11-30 | 2024-05-03 | 哈尔滨工业大学 | Ultrafast laser processing method for flexible asymmetric electrode |
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