CN107422546A - The preparation method and substrate of Graphene electrodes, display - Google Patents
The preparation method and substrate of Graphene electrodes, display Download PDFInfo
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- CN107422546A CN107422546A CN201710265073.7A CN201710265073A CN107422546A CN 107422546 A CN107422546 A CN 107422546A CN 201710265073 A CN201710265073 A CN 201710265073A CN 107422546 A CN107422546 A CN 107422546A
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- coating layer
- polymeric coating
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- graphene
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a kind of preparation method of Graphene electrodes and substrate, display, methods described to include：Graphene oxide layer is formed on underlay substrate；Polymeric coating layer is coated with graphene oxide layer；Nano impression is carried out to polymeric coating layer, to form patterned polymeric coating layer；Reduction treatment is carried out to graphene oxide layer, the partial oxidation of graphite alkene layer for the polymeric coating layer covering not being patterned immediately is reduced to graphene；Polymeric coating layer is peeled off to obtain patterned Graphene electrodes.By the above-mentioned means, the present invention can accurately control the L/S of Graphene electrodes to reach Nano grade, high light transmittance and strong flexible Graphene electrodes are realized.
Description
Technical field
The present invention relates to display technology field, preparation method and substrate more particularly to a kind of Graphene electrodes, display
Device.
Background technology
Graphene is a kind of simple substance of carbon, is all the allotrope of carbon with diamond, graphite etc..With conventional electrode materials
ITO (tin indium oxide) is compared, and graphene has more preferable conductivity and light transmission, and using graphene as transparent electricity
Pole, there can be good prospect in flexible or curved-surface display field with bending fold.
It is to pass through that graphene is prepared into the conventional method of the electrode structure with line/seam (Line/Slit, L/S) at present
Strip mask plate blocks, and is carried out using the mode of airbrush application.This method efficiency is low, and coating accuracy is poor, it is difficult to real
Existing several microns of line width, can not meet polymer stabilizing vertical alignment (Polymerstabilized vertical alignment,
PSVALCD) the requirement of display precision.
The content of the invention
The present invention provides a kind of preparation method and substrate, display of Graphene electrodes, can accurately control graphene electric
The L/S of pole reaches Nano grade, realizes high light transmittance and strong flexible Graphene electrodes.
In order to solve the above technical problems, another technical solution used in the present invention is：A kind of Graphene electrodes are provided
Preparation method, the preparation method include：Graphene oxide layer is formed on underlay substrate；Applied on the graphene oxide layer
Cloth polymeric coating layer；The polymeric coating layer is imprinted, to form patterned polymeric coating layer；To the graphite oxide
Alkene layer carries out reduction treatment, and the partial oxidation of graphite alkene layer by the patterned polymeric coating layer covering is not reduced to graphite
Alkene；The polymeric coating layer is peeled off to obtain patterned Graphene electrodes.
In order to solve the above technical problems, another technical solution used in the present invention is：A kind of substrate, the substrate are provided
Including Graphene electrodes made of above-mentioned preparation method.
In order to solve the above technical problems, another technical scheme that the present invention uses is：A kind of display is provided, it is described aobvious
Show that device includes substrate described above.
The beneficial effects of the invention are as follows：The preparation method and substrate, display of a kind of Graphene electrodes are provided, by using
Nanometer embossing, the Graphene electrodes with L/S structures are prepared on substrate, can accurately control the L/S of Graphene electrodes
Up to Nano grade, high light transmittance and strong flexible Graphene electrodes are realized, and the preparation method technique is simple, it is aobvious without exposing
Shadow can reduce processing procedure and material cost.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the embodiment of Graphene electrodes preparation method one of the present invention；
Fig. 2 is the structural representation of the embodiment of Graphene electrodes preparation process one of the present invention；
Fig. 3 is the schematic flow sheet of the embodiments of S3 mono- in Fig. 1；
Fig. 4 is the structural representation of the embodiment of substrate one of the present invention；
Fig. 5 is the structural representation of the embodiment of inventive display one.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only the part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Refer to the schematic flow sheet of Fig. 1 and Fig. 2, Fig. 1 for the embodiment of Graphene electrodes preparation method one of the present invention, figure
2 be the structural representation of the embodiment of Graphene electrodes preparation process one of the present invention, and this method comprises the following steps：
S1, graphene oxide layer is formed on underlay substrate.
Can with further reference in Fig. 2 a), wherein, the underlay substrate can be transparent material, be specifically as follows glass, poly-
Any form of underlay substrates such as acid imide (PI), polyethylene terephthalate (PET) or transparent plastic, herein this hair
It is bright to be not specifically limited.And in step S1, the formation of graphene oxide layer can use electro-deposition, the methods of, and herein
It is not specifically limited.
S2, polymeric coating layer is coated with graphene oxide layer.
With further reference in Fig. 2 b), wherein, the polymeric coating layer (Resist) can be thermoplastic macromolecule material or
One kind in ultraviolet hardening high polymer material, and also need to adulterate a certain proportion of releasing agent in the polymeric coating layer.At this
Invent in an application scenarios, used polymeric coating layer is polymethyl methacrylate (Polymethyl
Methacrylate, PMMA), and baking-curing shaping is carried out to the polymeric coating layer after being coated with.
S3, nano impression is carried out to polymeric coating layer, to form patterned polymeric coating layer.
With further reference in Fig. 2 c) and d), wherein, described nanometer embossing can include but is not limited to heat pressing type and receive
Rice impressing, stepping exposure type nano impression, roller impressing, ultra-violet curing impressing, the nano impression laser based on template protection are auxiliary
The one kind helped in directly impressing and ultraviolet stamping and photoetching United Technologies, and can select difference for different polymeric coating layers
Stamping technique, in an of the invention application scenarios, used nano-imprinting method be heat pressing type nano impression, and of the invention
Just specifically heat pressing type nano impression is described in detail.
As shown in Fig. 2 step S3 further comprises following sub-step：
S31, heat polymeric coating layer.
, it is necessary to be heated to thermoplastic macromolecule material PMMA and reach PMMA glass transition temperature Tg in step S31
On (Glass transistion temperature), and thermoplastic, under elastomeric state, viscosity reduces, and mobility increases
By force.
S32, insert impressing mould and hot pressing is carried out to polymeric coating layer.
After heating polymeric coating layer PMMA, the impressing mould alignment with nanoscale is pressed in the polymeric coating layer therewith
On PMMA, and apply appropriate pressure, polymeric coating layer PMMA can fill the cavity in mould.In the process, the height
Molecular coatings PMMA thickness should be bigger than the cavity height of mould, so as to avoid the direct contact of mould and substrate and caused by
Damage.In addition, the line width of mould used in the present embodiment can be 10nm~10um.
S33, it is stripped after polymeric coating layer cooling, to form patterned polymeric coating layer.
After molding terminates, temperature reduces high polymer material solidification, thus can have the figure overlapped with impressing mould.With
After remove impressing mould, and carry out anisotropic etching remove residual polymer, followed by pattern transfer, to form figure
The polymeric coating layer of shape.Wherein, the method that the pattern transfer in the step can use lithographic technique or stripping, the present invention
It is not especially limited.
S4, reduction treatment is carried out to graphene oxide layer, the partial oxidation stone for the polymeric coating layer covering not being patterned immediately
Black alkene layer is reduced to graphene.
With further reference in Fig. 2 e), in step s 4 to graphene oxide layer used by restoring method include but unlimited
One in reducing agent reduction, high-temperature heat treatment reduction, electrochemical reduction, solvothermal, catalysis reduction and microwave reduction
Kind, and the present invention is not specifically limited herein.Wherein, when carrying out reduction treatment to graphene oxide layer, the height that is not patterned immediately
The partial oxidation of graphite alkene layer of molecular coatings covering is reduced to graphene (specifically may refer to the d figures in Fig. 2).
S5, polymeric coating layer is peeled off to obtain patterned Graphene electrodes.
With further reference in Fig. 2 f), wherein, the partial oxidation of graphite alkene layer quilt of the polymeric coating layer that is not patterned immediately covering
After being reduced to graphene, unnecessary polymeric coating layer is peeled off using stripper (Stripper), water-filling of going forward side by side wash acquisition tool by
Patterned Graphene electrodes.
In addition, made of the above method Graphene electrodes L/S electrodes, up to Nano grade, surface is flat, and has
Fine pliability, suitable for Flexible Displays or curved-surface display, and the penetrance of panel can be effectively improved.Certain graphene electricity
Pole can also apply to the field of other demand fine electrodes.
In above-mentioned embodiment, by using nanometer embossing, the graphene electricity with L/S structures is prepared on substrate
It pole, can accurately control the L/S of Graphene electrodes to reach Nano grade, realize high light transmittance and strong flexible Graphene electrodes,
And the preparation method technique is simple, processing procedure and material cost can be reduced without exposure imaging.
Referring to Fig. 4, Fig. 4 is the structural representation of the embodiment of substrate one of the present invention, and in a specific embodiment, the base
Plate 10 includes Graphene electrodes A prepared by above-mentioned any means, and the substrate 10 can be the one of array base palte or color membrane substrates
Kind, specific method each embodiment as described above, here is omitted.
Referring to Fig. 5, Fig. 5 is the structural representation of the embodiment of inventive display one, the display 20 includes above-mentioned
Any described substrate B, is specifically described referring to the respective embodiments described above, here is omitted.
In summary, it should be readily apparent to one skilled in the art that the present invention provide a kind of Graphene electrodes preparation method and
Substrate, display, by using nanometer embossing, the Graphene electrodes with L/S structures are prepared on substrate, can be accurate
The L/S of control Graphene electrodes reaches Nano grade, realizes high light transmittance and strong flexible Graphene electrodes, and the preparation method
Technique is simple, and processing procedure and material cost can be reduced without exposure imaging.
Embodiments of the present invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this
The equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, it is included within the scope of the present invention.
Claims (10)
1. a kind of preparation method of Graphene electrodes, it is characterised in that the preparation method includes：
Graphene oxide layer is formed on underlay substrate；
Polymeric coating layer is coated with the graphene oxide layer；
Nano impression is carried out to the polymeric coating layer, to form patterned polymeric coating layer；
Reduction treatment is carried out to the graphene oxide layer, not by the partial oxidation stone of the patterned polymeric coating layer covering
Black alkene layer is reduced to graphene；
The polymeric coating layer is peeled off to obtain patterned Graphene electrodes.
2. preparation method according to claim 1, it is characterised in that described that nano impression is carried out to the polymeric coating layer
Using heat pressing type nano impression, stepping exposure type nano impression, roller impressing, ultra-violet curing impressing, receiving based on template protection
One kind in rice impressing laser assisted direct imprint and ultraviolet stamping and photoetching United Technologies.
3. preparation method according to claim 2, it is characterised in that the heat pressing type nano impression includes：
Heat the polymeric coating layer；
Insert impressing mould and hot pressing is carried out to the polymeric coating layer；
It is stripped after the polymeric coating layer cooling, to form patterned polymeric coating layer.
4. preparation method according to claim 3, it is characterised in that the line width of the impressing mould is 10nm~10um.
5. preparation method according to claim 1, it is characterised in that described that also original place is carried out to the graphene oxide layer
Reason is using in reducing agent reduction, high-temperature heat treatment reduction, electrochemical reduction, solvothermal, catalysis reduction and microwave reduction
It is a kind of.
6. preparation method according to claim 1, it is characterised in that the polymeric coating layer is thermoplastic macromolecule material
Or one kind in ultraviolet hardening high polymer material.
7. preparation method according to claim 1, it is characterised in that the underlay substrate material is glass, polyimides
And one kind in polyethylene terephthalate.
8. a kind of substrate, it is characterised in that the preparation method that the substrate is included as any one of claim 1-7 is made
Graphene electrodes.
9. substrate according to claim 8, it is characterised in that the substrate is array base palte or color membrane substrates.
10. a kind of display, it is characterised in that the display includes the substrate as described in claim any one of 8-9.
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| CN201710265073.7A CN107422546A (en) | 2017-04-21 | 2017-04-21 | The preparation method and substrate of Graphene electrodes, display |
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| CN201710265073.7A CN107422546A (en) | 2017-04-21 | 2017-04-21 | The preparation method and substrate of Graphene electrodes, display |
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| CN1722366A (en) * | 2004-06-01 | 2006-01-18 | 株式会社半导体能源研究所 | Method for manufacturing semiconductor device |
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| CB02 | Change of applicant information |
Address after: No.9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: No.9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20171201 |
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