CN104317162A - Graphene chemical patterning method - Google Patents
Graphene chemical patterning method Download PDFInfo
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- CN104317162A CN104317162A CN201410607577.9A CN201410607577A CN104317162A CN 104317162 A CN104317162 A CN 104317162A CN 201410607577 A CN201410607577 A CN 201410607577A CN 104317162 A CN104317162 A CN 104317162A
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Abstract
The invention discloses a graphene chemical patterning method. The graphene chemical patterning method comprises the following steps: 1) coating a photo-resistant material on the surface of graphene; 2) carrying out exposure and development on a photo-resistant material and graphene composite obtained in step 1) to obtain a required pattern; 3) feeding the photo-resistant material and graphene composite exposed and developed in step 2) into a reactor, and converting the developed and exposed graphene into graphite; 4) removing the photo-resistant material off the composite obtained in step 3) to obtain patterned graphene. Part of the graphene needing to be patterned is reserved, and unnecessary parts are converted into graphite. As the graphene is not conductive, the conductive performance of the graphene cannot be affected. As a result, the functional patterning of the graphene is realized, and the graphene processing reversibility is also reversed. The massive and efficient patterning of the graphene can be realized.
Description
Technical field
The present invention relates to technical field of graphene, be specifically related to a kind of chemical patterning method of Graphene.
Background technology
From 2004, two of this especially big of graceful side professors found and since preparing Graphene, and Graphene receives pursuing of scientific circles and industrial community with its excellent characteristic.Graphene is the thinnest the lightest two-dimensional material known at present, has extraordinary electric conductivity, is considered to the basic material most possibly replacing silicon.
Graphene has higher chemical stability, and the chemical materials such as traditional acid, alkali, etching paste can not etch Graphene.At present graphene film is graphically mainly taked to the method for laser ablation, compared to the graphic method adopting gold-tinted to etch on a large scale to tin indium oxide (ITO), laser etching method efficiency obviously will lower than gold-tinted technique, and this also greatly have impact on the patterned efficiency of Graphene, for the ease of extensive, carry out graphically to Graphene fast, need a kind of chemical patterning method newly.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of chemical patterning method of Graphene, can in large-scale, high-efficiency Graphene be carried out graphically.
For achieving the above object, the invention provides following technical scheme:
The chemical patterning method of Graphene of the present invention, comprises the following steps:
1) photoresist is smeared at graphenic surface;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains sends into reaction unit, changes the Graphene that development exposes into graphite alkane;
4) removal step 3) photoresist on the compound substance that obtains, obtain patterned Graphene.
Further, in described step 1), Graphene is Graphene growing substrate transferred to after growth in target substrate.
Further, in described step 1), growing substrate is copper, nickel, iron or aluminium.
Further, in described step 1), target substrate is polyethylene terephthalate, polycarbonate, Polyvinylchloride, quartz, tygon or polymethylmethacrylate.
Further, in described step 1), photoresist is positive glue, negative glue or reversion glue.
Further, in described step 3), by the concrete grammar that the Graphene that development exposes changes graphite alkane into be: material is put into high energy reaction chamber, use argon cleaning reaction chamber, air in reaction chamber is discharged, then injects the mixed gas of hydrogen and argon gas in the reactor chamber, open reaction chamber, react 30 points ~ 4 hours until the state that reaches capacity, take out.
Further, in described step 3), high energy reaction chamber is plasma or ultraviolet reaction chamber.
Further, in described step 3), in the mixed gas of hydrogen and argon gas, the volume ratio of hydrogen is 5% ~ 20%.
Beneficial effect of the present invention is:
1) Graphene is the extraordinary semi-metallic of a kind of electric conductivity, and graphite alkane is a kind of insulating material, non-conductive.It is generally acknowledged, be exactly graphically say that unwanted part is etched away by physics or chemical method, the present invention proposes another kind of graphic method: patterned for needs Graphene part retained, unwanted part is become graphite alkane, because graphite alkane is non-conductive, so the electric conductivity of Graphene can not be affected, so both ensure that the functional of Graphene is graphically achieved, remain the possibility of non-patterned part following process simultaneously.
2) adopt the method to carry out graphically, overcome Graphene and can not carry out the chemically patterned inferior position of method.Graphical physical methods of laser bombardment that adopt of current Graphene realize more, and the method efficiency is lower, is unfavorable for the large-scale industrial production of Graphene.Adopt the method, can accomplish in large-scale, high-efficiencyly to carry out graphically to Graphene, the large-scale industrial production showing field at touch-control for Graphene lays the foundation.
3) the method is by photoresist as barrier bed, realizes figure by exposure imaging, finally exposed region Graphene is become graphite alkane.Adopt the method, the consistance of materials processing can be ensured, promote the yield of suitability for industrialized production, thus reduce commercial production cost.Also can realize the effective control to graphical edge definition simultaneously.
Accompanying drawing explanation
In order to make object of the present invention, technical scheme and beneficial effect clearly, the invention provides following accompanying drawing and being described:
Fig. 1 is the process chart of the chemical patterning method of Graphene of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Fig. 1 is the process chart of the chemical patterning method of Graphene of the present invention, and as shown in the figure, the chemical patterning method of Graphene of the present invention, comprises the following steps:
1) growing graphene on growing substrate, then transfer in target substrate, then smear photoresist at graphenic surface;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into high energy reaction chamber (reaction chamber such as plasma or ultraviolet), use argon cleaning reaction chamber, air in reaction chamber is discharged, inject the mixed gas (volume ratio of hydrogen is 5% ~ 20%) of hydrogen and argon gas more in the reactor chamber, open reaction chamber, react 30 points ~ 4 hours until the state that reaches capacity, the Graphene being about to development exposure changes graphite alkane into;
4) removal step 3) photoresist on the compound substance that obtains, obtain patterned Graphene.
In the present invention, the growing substrate of Graphene can select the metallic matrixes such as copper, nickel, iron or aluminium, the target substrate of Graphene transfer can select the flexible transparent substrate such as polyethylene terephthalate, polycarbonate, Polyvinylchloride, quartz, tygon or polymethylmethacrylate, and photoresist is positive glue, negative glue or reversion glue etc.
embodiment 1:
1) growing graphene on Copper Foil, then Graphene is transferred in polyethylene terephthalate flexible transparent substrate, then at the positive optical cement of graphenic surface uniform application as photoresist;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into plasm reaction cavity, discharge the air in reaction chamber, inject the mixed gas (hydrogen volume accounting 10%) of hydrogen and argon gas, open reaction chamber, react 1 hour, react the state that reaches capacity, the Graphene of development exposed region is transformed into graphite alkane;
4) removal step 3) obtain compound substance on photoresist, obtain patterned Graphene.
embodiment 2:
1) growing graphene on Copper Foil, is transferred in polyethylene terephthalate flexible transparent substrate by Graphene, at graphenic surface uniform application reversion glue as photoresist;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into the ultraviolet reaction chamber that wavelength is 270 nm, with argon cleaning reaction chamber, air is discharged under normal pressure, then the mixed gas (hydrogen volume accounting 7%) of hydrogen and argon gas is injected, open reaction chamber, react the 2 hours 15 minutes states that reach capacity, the Graphene that development exposes is transformed into graphite alkane completely;
4) removal step 3) photoresist on the compound substance that obtains, obtain graphical after Graphene.
embodiment 3:
1) growing graphene on Copper Foil, then Graphene is transferred in polycarbonate substrate, then bear optical cement as photoresist at graphenic surface uniform application;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into plasm reaction cavity, discharge the air in reaction chamber, inject the mixed gas (hydrogen volume accounting 5%) of hydrogen and argon gas, open reaction chamber, react four hours, react the state that reaches capacity, the Graphene of development exposed region is transformed into graphite alkane;
4) removal step 3) obtain compound substance on photoresist, obtain patterned Graphene.
embodiment 4:
1) growing graphene on Copper Foil, then Graphene is transferred in quartz substrate, then bear optical cement as photoresist at graphenic surface uniform application;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into plasm reaction cavity, discharge the air in reaction chamber, inject the mixed gas (hydrogen volume accounting 8%) of hydrogen and argon gas, open reaction chamber, react 2 hours, react the state that reaches capacity, the Graphene of development exposed region is transformed into graphite alkane;
4) removal step 3) obtain compound substance on photoresist, obtain patterned Graphene.
embodiment 5:
1) growing graphene on Copper Foil, then Graphene is transferred at the bottom of polyvinyl, then at the positive optical cement of graphenic surface uniform application as photoresist;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into plasm reaction cavity, discharge the air in reaction chamber, inject the mixed gas (hydrogen volume accounting 7%) of hydrogen and argon gas, open reaction chamber, react 2 hours, react the state that reaches capacity, the Graphene of development exposed region is transformed into graphite alkane;
4) removal step 3) obtain compound substance on photoresist, obtain patterned Graphene.
embodiment 6:
1) growing graphene on Copper Foil, is transferred to Graphene on polymethyl methacrylate base plate, is photoresist at graphenic surface uniform application reversion glue;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into plasm reaction cavity, with argon cleaning reaction chamber, air is discharged under normal pressure, then the mixed gas (hydrogen volume accounting 20%) of hydrogen and argon gas is injected, open reaction chamber, react 30 minutes states that reach capacity, the Graphene that development exposes is transformed into graphite alkane completely;
4) removal step 3) photoresist on the compound substance that obtains, obtain graphical after Graphene.
embodiment 7:
1) growing graphene on Copper Foil, is transferred to Graphene on glass substrate, at graphenic surface uniform application reversion glue as photoresist;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into the ultraviolet reaction chamber that wavelength is 278 nm, with argon cleaning reaction chamber, air is discharged under normal pressure, then the mixed gas (hydrogen volume accounting 10%) of hydrogen and argon gas is injected, open reaction chamber, react 2 hours states that reach capacity, the Graphene that development exposes is transformed into graphite alkane completely;
4) removal step 3) photoresist on the compound substance that obtains, obtain graphical after Graphene.
embodiment 8:
1) growing graphene on Copper Foil, is transferred to Graphene on polyvinyl chloride substrate, at the positive glue of graphenic surface uniform application as photoresist;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into the ultraviolet reaction chamber that wavelength is 276 nm, with argon cleaning reaction chamber, air is discharged under normal pressure, then the mixed gas (hydrogen volume accounting 8%) of hydrogen and argon gas is injected, open reaction chamber, react the 1 hour 30 minutes states that reach capacity, the Graphene that development exposes is transformed into graphite alkane completely;
4) removal step 3) photoresist on the compound substance that obtains, obtain graphical after Graphene.
embodiment 9:
1) growing graphene on Copper Foil, is transferred to Graphene on glass substrate, at graphenic surface uniform application reversion glue as photoresist;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into the ultraviolet reaction chamber that wavelength is 282 nm, with argon cleaning reaction chamber, air is discharged under normal pressure, then the mixed gas (hydrogen volume accounting 20%) of hydrogen and argon gas is injected, open reaction chamber, react 30 minutes states that reach capacity, the Graphene that development exposes is transformed into graphite alkane completely;
4) removal step 3) photoresist on the compound substance that obtains, obtain graphical after Graphene.
embodiment 10:
1) growing graphene on Copper Foil, is transferred to Graphene on glass substrate, bears glue as photoresist at graphenic surface uniform application;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains puts into the ultraviolet reaction chamber that wavelength is 280 nm, with argon cleaning reaction chamber, air is discharged under normal pressure, then the mixed gas (hydrogen volume accounting 5%) of hydrogen and argon gas is injected, open reaction chamber, react 3 hours states that reach capacity, the Graphene that development exposes is transformed into graphite alkane completely;
4) removal step 3) photoresist on the compound substance that obtains, obtain graphical after Graphene.
What finally illustrate is, above preferred embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although by above preferred embodiment to invention has been detailed description, but those skilled in the art are to be understood that, various change can be made to it in the form and details, and not depart from claims of the present invention limited range.
Claims (8)
1. a chemical patterning method for Graphene, is characterized in that: comprise the following steps:
1) photoresist is smeared at graphenic surface;
2) photoresist step 1) obtained-graphene composite material exposure imaging, obtains the figure needed;
3) by step 2) photoresist-graphene composite material after the exposure imaging that obtains sends into reaction unit, changes the Graphene that development exposes into graphite alkane;
4) removal step 3) photoresist on the compound substance that obtains, obtain patterned Graphene.
2. the chemical patterning method of Graphene according to claim 1, is characterized in that: in described step 1), and Graphene is Graphene growing substrate transferred to after growth in target substrate.
3. the chemical patterning method of Graphene according to claim 2, is characterized in that: in described step 1), growing substrate is copper, nickel, iron or aluminium.
4. the chemical patterning method of Graphene according to claim 2, is characterized in that: in described step 1), target substrate is polyethylene terephthalate, polycarbonate, Polyvinylchloride, quartz, tygon or polymethylmethacrylate.
5. the chemical patterning method of Graphene according to claim 1, is characterized in that: in described step 1), and photoresist is positive glue, negative glue or reversion glue.
6. the chemical patterning method of Graphene according to claim 1, it is characterized in that: in described step 3), by the concrete grammar that the Graphene that development exposes changes graphite alkane into be: material is put into high energy reaction chamber, use argon cleaning reaction chamber, air in reaction chamber is discharged, then injects the mixed gas of hydrogen and argon gas in the reactor chamber, open reaction chamber, react 30 points ~ 4 hours until the state that reaches capacity, take out.
7. the chemical patterning method of Graphene according to claim 6, is characterized in that: in described step 3), and high energy reaction chamber is plasma or ultraviolet reaction chamber.
8. the chemical patterning method of Graphene according to claim 6, is characterized in that: in described step 3), in the mixed gas of hydrogen and argon gas, the volume ratio of hydrogen is 5% ~ 20%.
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| CN104851910A (en) * | 2015-04-13 | 2015-08-19 | 京东方科技集团股份有限公司 | Thin-film transistor, array substrate, producing method, display panel, and display device |
| CN104900533A (en) * | 2015-04-13 | 2015-09-09 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate, preparation methods, display panel and display device |
| CN105399049A (en) * | 2015-12-03 | 2016-03-16 | 中山大学 | Micro-nano structure of two-dimensional atomic material and patterning preparation method |
| CN107422546A (en) * | 2017-04-21 | 2017-12-01 | 深圳市华星光电技术有限公司 | The preparation method and substrate of Graphene electrodes, display |
| CN110006975A (en) * | 2019-04-23 | 2019-07-12 | 电子科技大学 | A kind of biosensor and preparation method thereof based on AFP |
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