CN104835729B - A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes - Google Patents
A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes Download PDFInfo
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- CN104835729B CN104835729B CN201510159274.XA CN201510159274A CN104835729B CN 104835729 B CN104835729 B CN 104835729B CN 201510159274 A CN201510159274 A CN 201510159274A CN 104835729 B CN104835729 B CN 104835729B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 230000006698 induction Effects 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229920002799 BoPET Polymers 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229920000742 Cotton Polymers 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920006267 polyester film Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000004146 energy storage Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes, the micro-structural of corresponding pattern is first machined with metal form surface, metal form is heated using thermal source, then metal form is made to touch the graphene oxide film coated in flexible substrate surface using mechanical pressure, finally metal form is removed from graphene oxide film surface using mechanical force, patterned reduced graphene is obtained on flexible substrate surface, the pattern of wherein patterned reduced graphene is consistent with the micro-structural of high-temperature metal template, the present invention can high efficiency, low cost, high-resolution graphene pattern is produced on a large scale, for flexible electronic, Flexible Displays, wearable electronic, the scales such as flexible energy storage device manufacture provides technical support.
Description
Technical field
The invention belongs to micro-fabrication technology field, and in particular to a kind of template heat of flexible reduced graphene patterned electrodes
Field induction manufacturing process.
Background technology
The appearance of grapheme material makes flexible electronic in recent years obtain the development of explosion type.Grapheme material has excellent
Electricity, mechanics, the chemical property of show, patterned Flexible graphene electrode are deposited in flexible microelectronics, photoelectron, electrochemical energy
The fields such as storage have and its wide potential using value, such as current flexible field-effect transistor, flexible thin-film solar
The specific devices field such as battery, flexible electrochemical memory, flexible display competitively utilizes patterned Graphene electrodes generation
For traditional electrode pattern.It is that development is graphene-based therefore, realizing the high efficiency of graphene figure, low cost, extensive manufacture
The matter of utmost importance of flexible electronic/photonic device.
In order to manufacture patterned Graphene electrodes, a variety of different manufacturing process have been developed in domestic and foreign scholars, such as
Certain graphene figure can be linked to be on substrate, utilize high temperature by being sprayed graphene ink point by point using inkjet technology
Atomic force probe on graphene oxide film contact scanning can scanning track on realize reduced graphene figure, using swash
Light can obtain reduced graphene pattern in graphene oxide film surface scan direct write.But above-mentioned ink jet printing process,
Thermal probe scanning process, laser direct-writing process etc. are serial processing methods, it is difficult to realize the low of patterned graphene electrode
Cost, high efficiency, scale manufacture, have become limitation graphene-based flexible electronic device, photonic device, electrochemical device etc.
The key technology bottleneck of development realizes the low of patterned graphene electrode, it is necessary to develop a kind of new manufacture method from principle
Cost, high efficiency, scale manufacture.
The content of the invention
The shortcomings that in order to overcome above-mentioned prior art, it is an object of the invention to provide a kind of flexible reduced graphene figure
The template thermal field induction manufacturing process of polarizing electrode, has high efficiency, low cost, the manufacturing capacity of scale.
In order to achieve the above object, the technical scheme taken of the present invention is：
A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes, comprises the following steps：
1) there is the micro-structural of corresponding pattern in the Surface Machining of metal form 1, metal form 1 heated using thermal source 2,
Make the temperature of metal form 1 at 200 DEG C~800 DEG C；
2) and then using mechanical pressure 3 metal form 1 is made to touch the graphene oxide coated in the surface of flexible substrate 5 thin
Film 4, mechanical pressure 3 applied in it are limited with ensureing that metal form 1 is in close contact with graphene oxide film 4, during contact
Between between 1 millisecond to 1 minute；
3) finally metal form 1 is removed from the surface of graphene oxide film 4 using mechanical force 6, i.e., in the table of flexible substrate 5
Face obtains patterned reduced graphene 7, wherein the pattern of patterned reduced graphene 7 and micro- knot of high-temperature metal template 1
Structure is consistent.
Described metal form 1 is the metal with high thermal conductivity coefficient, including copper, stainless steel, nickel or chromium.
The thickness of described graphene oxide film 4 is 0.1 micron to 100 microns.
Described flexible substrate 5 is cellulose paper, cotton, polyimide film (PI films) or high temperature resistance polyester film (PET
Film),
The present invention can high efficiency, low cost, produce high-resolution graphene pattern on a large scale, be flexible electronic,
The scales such as Flexible Displays, wearable electronic, flexible energy storage device manufacture provides technical support.
Brief description of the drawings
Fig. 1 is the temperature-rise period figure of metal form.
Fig. 2 is template thermal field Induction Process figure.
Fig. 3 is the shaping separation schematic diagram of reduced graphene electrode.
Fig. 4 a are embodiment metal form pictorial diagrams；Fig. 4 b are the graphical reduced graphene electrodes on photo paper surface
Figure；Fig. 4 c are the SEM phenograms of reduced graphene electrode pattern, and Fig. 4 d are Fig. 4 c partial enlarged drawings, Fig. 4 e
It is the light microscope enlarged drawing of reduced graphene electrode pattern.
Embodiment
The present invention is described in further details below in conjunction with the accompanying drawings.
A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes, comprises the following steps：
1) reference picture 1, have an embossment structure in the Surface Machining of metal form 1, the material of metal form 1 is copper, stainless steel,
Nickel, chromium etc. have the metal of high thermal conductivity coefficient, and metal form 1 is heated using thermal source 2, makes the temperature of metal form 1
At 200 DEG C~800 DEG C；
2) reference picture 2, then metal form 1 is made to touch the oxidation coated in the surface of flexible substrate 5 using mechanical pressure 3
Graphene film 4, flexible substrate 5 are cellulose paper, cotton, polyimide film (PI films) or high temperature resistance polyester film (PET film),
The thickness of graphene oxide film 4 is 0.1 micron to 100 microns, and the size of mechanical pressure 3 is can make metal form 1 close
Catalytic oxidation graphene film 4 is advisable, time of contact between 1 millisecond to 1 minute,
3) reference picture 3, finally metal form 1 is removed from the surface of graphene oxide film 4 using mechanical force 6, i.e., soft
Property the surface of substrate 5 obtain patterned reduced graphene 7, wherein the pattern of patterned reduced graphene 7 and metal form 1
Micro-structural is consistent.
The present invention is described in detail with reference to embodiment.
In order to show the feasibility and high efficiency of flexible reduced graphene patterned electrodes template thermal field induction, the present embodiment
Use high temperature stainless steel template to be patterned graphene oxide thermal induction to reduce, reference picture 4, the GO in figure is oxidation stone
The english abbreviation of black alkene (Graphene Oxide), rGO are reduced graphene (reduced Graphene Oxide) English
Abbreviation.In embodiment, the micro-structural of interdigital figure is milled out on stainless steel bulk surface first with milling method, is obtained
To metal form, reference picture 4a, metal form is heated using electric heater, heating-up temperature is 650 DEG C；Applied with spraying
The method covered goes out one layer of graphene oxide film in photo paper surface spraying, and reference picture 4b, the thickness of graphene oxide film is 2
Micron；By metal form catalytic oxidation graphene film and speed away, you can obtained on photo paper surface interdigital patterned
Reduced graphene patterned electrodes, Fig. 4 c and Fig. 4 d are the SEM phenograms of reduced graphene electrode pattern, figure
4e is the light microscope enlarged drawing of reduced graphene electrode pattern.
Claims (4)
1. the template thermal field induction manufacturing process of a kind of flexible reduced graphene patterned electrodes, it is characterised in that including following
Step：
1) in the figuratum micro-structural of metal form (1) Surface Machining, metal form (1) is heated using thermal source (2), made
The temperature of metal form (1) is at 200 DEG C~800 DEG C；
2) and then using mechanical pressure (3) metal form (1) is made to touch the graphene oxide coated in flexible substrate (5) surface
Film (4), the mechanical pressure (3) applied in it are to ensure that metal form (1) is in close contact with graphene oxide film (4)
Limit, time of contact is between 1 millisecond to 1 minute；
3) finally metal form (1) is removed from graphene oxide film (4) surface using mechanical force (6), i.e., in flexible substrate
(5) surface obtains patterned reduced graphene (7), wherein the pattern of patterned reduced graphene (7) and metal form (1)
Micro-structural it is consistent.
2. a kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes according to claim 1,
It is characterized in that：Described metal form (1) is the metal with high thermal conductivity coefficient, including copper, stainless steel, nickel or chromium.
3. a kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes according to claim 1,
It is characterized in that：The thickness of described graphene oxide film (4) is 0.1 micron to 100 microns.
4. a kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes according to claim 1,
It is characterized in that：Described flexible substrate (5) is cellulose paper, cotton, polyimide film (PI films) or high temperature resistance polyester film
PET film.
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| CN201510159274.XA CN104835729B (en) | 2015-04-03 | 2015-04-03 | A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes |
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| CN201510159274.XA CN104835729B (en) | 2015-04-03 | 2015-04-03 | A kind of template thermal field induction manufacturing process of flexible reduced graphene patterned electrodes |
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| CN104835729A CN104835729A (en) | 2015-08-12 |
| CN104835729B true CN104835729B (en) | 2017-12-26 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105789425B (en) * | 2016-01-05 | 2019-01-18 | 中国科学院金属研究所 | A kind of cellulose paper/Bi2Te3Thermal electric film composite material and preparation method |
| CN107024806A (en) * | 2017-04-20 | 2017-08-08 | 深圳市华星光电技术有限公司 | Preparation method, display base plate and the liquid crystal display panel of display base plate |
| CN107422546A (en) * | 2017-04-21 | 2017-12-01 | 深圳市华星光电技术有限公司 | The preparation method and substrate of Graphene electrodes, display |
| CN107146770B (en) * | 2017-05-10 | 2021-01-22 | 京东方科技集团股份有限公司 | Preparation method of array substrate, array substrate and display device |
| CN109411149B (en) * | 2017-08-18 | 2021-01-22 | 京东方科技集团股份有限公司 | Graphene circuit pattern, preparation method thereof and electronic product |
| CN108447695B (en) * | 2018-02-02 | 2020-01-03 | 北京理工大学 | Preparation method of foldable paper-based micro supercapacitor |
| CN109580739A (en) * | 2018-12-17 | 2019-04-05 | 电子科技大学 | A kind of flexible exhalation ammonia gas sensor and preparation method thereof based on porous-substrates |
| CN109725177B (en) * | 2019-03-05 | 2020-05-22 | 西安交通大学 | Method for measuring one-dimensional nano material interface binding energy |
| CN110944414A (en) * | 2019-10-21 | 2020-03-31 | 珠海烯蟀科技有限公司 | Microcrystalline glass or mica sheet heating device and electrode connection method thereof |
| CN114628156A (en) * | 2020-12-11 | 2022-06-14 | 中国科学院大连化学物理研究所 | Preparation method of flexible planar micro energy storage device |
Citations (1)
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|---|---|---|---|---|
| CN102653190A (en) * | 2011-03-04 | 2012-09-05 | 国家纳米科学中心 | Method for forming graphene oxide pattern and graphene pattern |
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| KR101443222B1 (en) * | 2007-09-18 | 2014-09-19 | 삼성전자주식회사 | Graphene pattern and process for preparing the same |
| US9605193B2 (en) * | 2012-10-19 | 2017-03-28 | The Hong Kong University Of Science And Technology | Three dimensional interconnected porous graphene-based thermal interface materials |
| US20140205763A1 (en) * | 2013-01-22 | 2014-07-24 | Nutech Ventures | Growth of graphene films and graphene patterns |
| CN103236295B (en) * | 2013-04-23 | 2016-09-14 | 上海师范大学 | A kind of preparation method of patterned Graphene conductive film |
| KR101482655B1 (en) * | 2013-07-10 | 2015-01-16 | 한국과학기술원 | Fabrication Method for manufacturing High Quality Graphene using Heating of Carbon-based Self-assembly monolayer |
| KR20150021362A (en) * | 2013-08-20 | 2015-03-02 | 에스케이하이닉스 주식회사 | Semiconductor Device And Method of Manufacturing The same |
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| CN102653190A (en) * | 2011-03-04 | 2012-09-05 | 国家纳米科学中心 | Method for forming graphene oxide pattern and graphene pattern |
Non-Patent Citations (1)
| Title |
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| 《Annealing a grapheme oxide film to produce a free standing high conductive grapheme film》;Cheng-Meng Chen等;《CARBON》;20110911;第50卷;说明书第[0038]-[0080]段，附图1-3 * |
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