CN104823263B - 处理离子束的装置 - Google Patents

处理离子束的装置 Download PDF

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Publication number
CN104823263B
CN104823263B CN201380061200.1A CN201380061200A CN104823263B CN 104823263 B CN104823263 B CN 104823263B CN 201380061200 A CN201380061200 A CN 201380061200A CN 104823263 B CN104823263 B CN 104823263B
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CN
China
Prior art keywords
ion beam
voltage
electrodes
scanning assembly
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380061200.1A
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English (en)
Chinese (zh)
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CN104823263A (zh
Inventor
常胜武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN104823263A publication Critical patent/CN104823263A/zh
Application granted granted Critical
Publication of CN104823263B publication Critical patent/CN104823263B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201380061200.1A 2012-10-24 2013-10-22 处理离子束的装置 Active CN104823263B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/658,990 US9165744B2 (en) 2012-10-24 2012-10-24 Apparatus for treating ion beam
US13/658,990 2012-10-24
PCT/US2013/066160 WO2014066375A1 (en) 2012-10-24 2013-10-22 Apparatus for treating ion beam

Publications (2)

Publication Number Publication Date
CN104823263A CN104823263A (zh) 2015-08-05
CN104823263B true CN104823263B (zh) 2017-05-24

Family

ID=49519127

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380061200.1A Active CN104823263B (zh) 2012-10-24 2013-10-22 处理离子束的装置

Country Status (6)

Country Link
US (1) US9165744B2 (https=)
JP (1) JP6453756B2 (https=)
KR (1) KR102039920B1 (https=)
CN (1) CN104823263B (https=)
TW (1) TWI597760B (https=)
WO (1) WO2014066375A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3193567A4 (en) * 2014-09-12 2018-05-09 Mitsubishi Electric Corporation Beam delivery system and particle beam therapy device
JP6462718B2 (ja) * 2014-12-04 2019-01-30 株式会社東芝 粒子線ビーム調整装置及び方法、粒子線治療装置
US9679745B2 (en) 2015-10-14 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Controlling an ion beam in a wide beam current operation range
CN113380598A (zh) * 2020-03-09 2021-09-10 北京烁科中科信电子装备有限公司 一种离子注入机电扫描图形识别注入方法
US11217427B1 (en) * 2020-11-27 2022-01-04 Applied Materials, Inc. System, apparatus and method for bunched ribbon ion beam
CN113140436A (zh) * 2021-04-22 2021-07-20 大连交通大学 扫描式氩离子源
CN115376874B (zh) * 2022-08-23 2024-10-18 浙江陶特容器科技股份有限公司 一种基于离子注入机的离子束注入控制方法及装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003036808A (ja) * 2001-07-19 2003-02-07 National Institute Of Advanced Industrial & Technology 荷電粒子ビーム装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769653A (en) * 1980-10-20 1982-04-28 Fujitsu Ltd Charged particle beam device
JP2881649B2 (ja) 1989-03-22 1999-04-12 日本真空技術株式会社 イオン注入装置
JP3859437B2 (ja) * 2000-08-04 2006-12-20 株式会社東芝 荷電ビーム露光装置
GB0408751D0 (en) * 2004-04-20 2004-05-26 Micromass Ltd Mass spectrometer
JP5085887B2 (ja) * 2006-05-30 2012-11-28 株式会社Ｓｅｎ ビーム処理装置及びビーム処理方法
JP5329050B2 (ja) 2007-04-20 2013-10-30 株式会社Ｓｅｎ ビーム処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003036808A (ja) * 2001-07-19 2003-02-07 National Institute Of Advanced Industrial & Technology 荷電粒子ビーム装置

Also Published As

Publication number Publication date
WO2014066375A1 (en) 2014-05-01
KR102039920B1 (ko) 2019-11-04
US20140110596A1 (en) 2014-04-24
KR20150074139A (ko) 2015-07-01
JP2016502733A (ja) 2016-01-28
TW201421529A (zh) 2014-06-01
CN104823263A (zh) 2015-08-05
JP6453756B2 (ja) 2019-01-16
US9165744B2 (en) 2015-10-20
TWI597760B (zh) 2017-09-01

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