CN104821369A - 一种倒装led的封装方法 - Google Patents
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 39
- 239000002775 capsule Substances 0.000 claims abstract description 37
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- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
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- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
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- 239000010974 bronze Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种倒装LED的封装方法，其特征在于包括以下步骤：a)获得一种由绝缘胶囊皮包覆导电粉体的导电胶囊，b)将所述导电胶囊均匀分散到导热性良好的绝缘胶体中，c)将所述绝缘胶体滴在封装基板上，然后将所述倒装发光二极管芯片的电极对齐基板上的电极位置放置，d)使用压合机按压所述倒装发光二极管芯片，同时在所述封装基板正负电极施加电压，当所述倒装发光二极管芯片导通，并达到预定电流时，所述压合机停止压合，e)加热固化所述压合绝缘胶体。
Description
技术领域
本发明涉及一种LED封装方法，特别涉及一种倒装LED的封装方法。
背景技术
发光二极管(Light Emitting Diode)，简称LED，是一种能够将电能转化为可见光的固态半导体器件。作为新型高效固体光源，半导体照明具有寿命长、节能、环保、安全等显著优点，广泛应用与照明、显示、信号指示灯领域。现有LED封装结构主要正装、倒装和垂直三种，其中倒装封装以其优良的导电性和散热性而日渐成为照明领域LED封装的主流。传统的倒装封装需将芯片表面的凸点通过焊接系统焊接与基板上，凸点与基板距离和水平度的控制直接影响到芯片的焊接质量，距离过大则焊接易导致虚焊，距离过小则焊接易导致短路，水平度差易导致空焊。又因传统的倒装LED焊接系统设备无法检测芯片焊接质量的好坏，导致倒装封装LED良率低下。
为克服传统倒装LED封装的问题，现有技术用异方向绝缘胶体来代替传统倒装LED封装过程中的焊接工艺。所述异方向绝缘胶体由绝缘胶水和金属粒子混合而成，通过控制金属粒子的含量，使得金属粒子均匀间隔地分布在绝缘胶水中。封装时先在封装基板上涂覆所述异方向绝缘胶体，再将芯片压紧在所述基板上，胶水凝固后将芯片固定在基本上。这时，垂直方向上部分金属粒子被夹压在芯片电极和基板之间使两者电连接，而水平方向上其他金属粒子由于有绝缘胶水隔离而相对绝缘。采用这种异方向绝缘胶体存在的问题：1、控制导电粒子比例难度大，当导电粒子比例过多时，可能导致电极水平方向短路；当导电粒子比例过少时，可能导致芯片电极与基板之间夹压不到金属粒子。2、电连接不可靠，由于其依靠芯片压紧的过程中随机夹压到的导电粒子来导电，LED使用过程中发生热胀冷缩，芯片电极与基板之间的距离变化时，易造成电阻急剧增大或断路。
发明内容
为了克服现有技术的不足，本发明提供一种倒装LED的封装方法。
本发明解决其技术问题所采用的技术手段是：一种倒装LED的封装方法，其特征在于包括以下步骤：
a)获得一种由绝缘胶囊皮包覆导电粉体的绝缘胶体囊，
b)将所述绝缘胶体囊均匀分散到导热性良好的绝缘胶体中，
c)将所述绝缘胶体滴在封装基板上，然后将所述倒装发光二极管芯片的电极对齐基板上的电极位置放置，
d)使用压合机按压所述倒装发光二极管芯片，同时在所述封装基板4正负电极施加电压，当所述倒装发光二极管芯片3导通，并达到预定电流时，所述压合机停止压合，
e)加热固化所述绝缘胶体。
本发明的有益效果是：由于本发明的绝缘胶体中包含由绝缘胶囊皮包裹导电粉体的绝缘胶体囊，绝缘胶体囊被芯片和基板压合到一定程度时绝缘胶囊皮破裂，检测到基板正负极电流导通时停止。比单一导电颗粒的电连接可靠；芯片电极与基板之外的绝缘胶体囊之间由于绝缘胶囊皮的存在而继续保持绝缘，不受绝缘胶体囊含量多少的影响，绝缘胶体囊含量控制容易。
作为本发明的进一步改进，步骤d)中，所述预定电流为0.1uA～1A，该检测电流范围可以获得较好的质量和较高的生产效率。
作为本发明的进一步改进，步骤d)中，同时满足所述芯片电极与基板之间的间距为2～30um，压合机停止压合，同时增加此条件可以保证芯片与基板距离较近，利于散热。
作为本发明的进一步改进，步骤d)中所述压合机对封装基板的正负电极施加电压的范围是2～100V。
作为本发明的进一步改进，步骤a)中所述导电胶囊的获取方法为将导电粉体浸渍于有机硅中而在导电粉体外形成绝缘胶囊皮。
作为本发明的进一步改进，步骤a)中所述导电胶囊的获取方法为将导电粉体浸渍于聚醛改性有机硅中而在导电粉体外形成绝缘胶囊皮。
附图说明
图1为本发明缘胶体囊的结构示意图
图2为本发明绝缘胶体与绝缘胶体囊混合状态示意图
图3为本发明在倒装LED封装中的状态示意图；
图4为本发明倒装LED的结构示意图；
图5为图4的局部放大图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细的说明。
本发明一种倒装LED的封装方法如下：
a)参考图1，获得一种由绝缘胶囊皮21包覆导电粉体22的导电胶囊2，
b)参考图2，将所述导电胶囊2均匀分散到导热性良好的绝缘胶体1中，
c)参考图3，将所述绝缘胶体1滴在封装基板4上，然后将所述倒装发光二极管芯片3的电极对齐基板4上的电极位置放置，
d)参考图4，使用压合机按压所述倒装发光二极管芯片3，同时在所述封装基板4正负电极施加电压，当所述倒装发光二极管芯片3导通，并达到预定电流时，所述压合机停止压合，
e)加热固化所述压合绝缘胶体1。
在上述步骤a)中，导电胶囊2的制作方法可将导电粉体22浸渍于有机硅中，在导电粉体22外形成绝缘胶囊皮21，或者将导电粉体22浸渍于聚醛改性有机硅中，在导电粉体22外形成绝缘胶囊皮21。机硅或聚醛改性有机硅为延展性较差的材料，以这些材料作为绝缘胶囊皮21可以使得导电胶囊在受压容易破裂，保证导电粉体可以扩散出来。
在所述步骤b)中，还可在所述绝缘胶体1中掺入微量的氢氧化铝，用以提高导电粉体22的扩散速度。绝缘胶体1的作用在于将芯片3固定在基板4上，同时也是将热量从芯片3传递至基板4的热传导介质。
在上述步骤d)中，压合机停止压合的条件为所述预定电流为0.1uA～1A，该检测电流范围可以获得较好的质量和较高的生产效率。
在上述步骤d)中，还可以将停止压合的条件在电流为0.1uA～1A的基础上，增加同时满足所述芯片电极3与基板4之间的间距H为2～30um，增加此条件可以保证芯片与基板距离较近，利于散热。
在上述步骤d)中，中所述压合机对封装基板4的正负电极施加电压的范围是2～100V。
所述绝缘胶体囊2的结构如图1所示，其外层为绝缘胶囊皮21，绝缘胶囊皮21包覆的导电物质22为导电粉体，如银粉、金粉或铜粉。所述绝缘胶囊皮21为延展性较差、受压容易破裂的材料，如机硅浸渍膜或聚醛改性有机硅浸渍膜，其受压至一定比例如30％-60％时破裂。所述导电物质22与所述绝缘胶体1混合后可快速扩散。作为本发明较优的实施方式，所述绝缘胶囊皮21的直径为4-10微米，被压合到原直径的30％-60％时破裂，这样可以保证芯片电极与基板距离较近，芯片电连接可靠，导热良好。为实现上述目的，最优的实施方式是所述绝缘胶囊皮21的直径为5微米，被压合到2～3微米时破裂。
封装完成的倒装LED参考图4和图5，包括倒装芯片3、基板4和将倒装芯片4固定在基板4上的绝缘胶体1，所述绝缘胶体1中掺杂有绝缘胶体囊2，所述绝缘胶体囊2包括绝缘胶囊皮21和包裹在所述绝缘胶囊皮中的导电粉体22，被夹压在芯片3电极与基板4之间的绝缘胶体囊2破裂，导电粉体22扩散在芯片4电极与基板4之间的绝缘胶体1中使芯片3电极与基板4电连接。
由于本发明的绝缘胶体1中包含由绝缘胶囊皮21包裹导物质22的绝缘胶体囊2，绝缘胶体囊2被芯片电极3和基板4夹压到一定程度时绝缘胶囊皮21破裂，芯片电极3与基板4之间充满导物质22而形成电连接，比单一导电颗粒的电连接可靠；芯片电极3与基板4之外的绝缘胶体囊2之间由于绝缘胶囊皮21的存在而继续保持绝缘，不受绝缘胶体囊2含量多少的影响，绝缘胶体囊2含量控制容易。
Claims (6)
1.一种倒装LED的封装方法，其特征在于包括以下步骤：
a)获得一种由绝缘胶囊皮包覆导电粉体的导电胶囊；
b)将所述导电胶囊均匀分散到导热性良好的绝缘胶体中；
c)将所述绝缘胶体滴在封装基板上，然后将所述倒装发光二极管芯片的电极对齐基板上的电极位置放置；
d)使用压合机按压所述倒装发光二极管芯片，同时在所述封装基板4正负电极施加电压，当所述倒装发光二极管芯片3导通，并达到预定电流时，所述压合机停止压合；
e)加热固化所述压合绝缘胶体1。
2.根据权利要求1所述的一种倒装LED的封装方法，其特征在于：所述d)步骤中，所述预定电流为0.1uA～1A。
3.根据权利要求2所述的一种倒装LED的封装方法，其特征在于：同时满足所述芯片电极与基板之间的间距为2～30um，压合机停止压合。
4.根据权利要求1所述的一种倒装LED的封装方法，其特征在于：所述压合机对封装基板的正负电极施加电压的范围是2～100V。
5.据权利要求1所述的一种倒装LED的封装方法，其特征在于：步骤a)中所述导电胶囊的获取方法为将导电粉体浸渍于有机硅中而在导电粉体外形成绝缘胶囊皮。
6.据权利要求1所述的一种倒装LED的封装方法，其特征在于：步骤a)中所述所述导电胶囊的获取方法为将导电粉体浸渍于聚醛改性有机硅而在导电粉体外形成绝缘胶囊皮。
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