CN104795490A - Preparation technology of magnetic sensor - Google Patents
Preparation technology of magnetic sensor Download PDFInfo
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- CN104795490A CN104795490A CN201410027240.0A CN201410027240A CN104795490A CN 104795490 A CN104795490 A CN 104795490A CN 201410027240 A CN201410027240 A CN 201410027240A CN 104795490 A CN104795490 A CN 104795490A
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Abstract
The invention discloses a preparation technology of a magnetic sensor. The preparation technology comprises that a first metal layer or MIM capacitor is arranged on a substrate including CMOS; an insulation self-stop layer is deposited on the first metal layer, a first dielectric material is deposited to form a through hole, and a metal material is deposited, patterned and photo-etched to form a second metal layer; a second dielectric material is deposited, and stopped on the second metal layer by chemically mechanical polishing planarization; a groove is formed on the first metal layer, and stops on the insulation self-stop layer by itself during etching; a third dielectric material is deposited; a magnetic material is deposited and patterned; patterns of the magnetic sensor are generated by patterning, a magnetic material layer of an inductive unit is formed, and a magnetic conductive unit is formed by using the groove; an insulation material is deposited to form an insulation material layer; and a window is opened, and an electrode on the magnetic material ARM is led out to lead out other electrodes. Thus, an ASIC chip can be effectively combined with the magnetic sensor, metal can be conveniently led out, and the preparation efficiency and rate of quality goods are both improved.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of preparation technology of device, particularly relate to a kind of preparation technology of magnetic sensing device.
Background technology
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigation system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic transducer, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
AMR Magnetic Sensor adopts anisotropic magnetoresistance (Anisotropic Magneto-Resistance) material to carry out the size of magnetic flux density in detection space.
Change in a linear fashion to make measurement result, plain conductor on AMR array is 45° angle oblique arrangement, electric current flows through from AMR material and rotates 45 ° through the flow direction of plain conductor after-current and the angle of AMR line, and namely when not having externally-applied magnetic field, AMR line self poling direction and electric current present the angle of 45 ° as shown in Figure 1.
When there is external magnetic field Ha, the polarised direction on AMR unit will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, and as shown in Figure 2, thus causes the change of AMR self resistance.
By the measurement changed AMR cell resistance, intensity and the direction of external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge or half-bridge to detect the change of AMR resistance, as shown in Figure 3.R1/R2/R3/R4 is the AMR resistance R0 that initial condition is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R (or contrary).Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Current three-axis sensor the magnetic sensing element (being erected on substrate in X/Y direction) of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on the brilliant or chip of two circles, link together finally by encapsulation and peripheral circuit, three discrete chips inside a sensor component, may be comprised.The advantage of such method has better Z axis performance (substantially the same with the performance of X, Y-axis), technical threshold is lower, but require very high to encapsulation, introduce higher packaging cost (cost of encapsulation occupies the very most of of whole chip cost), on the other hand, the reliability of the device that this method obtains is poor, and the size of device is also difficult to reduce further.
Nowadays, usually need ASIC peripheral circuit to drive in the application of Magnetic Sensor, current main employing asic chip and magnetic sensing chip carry out SIP encapsulation.And the single-chip pattern of SOC is developing direction, be characterized in that there is higher integrated level, better combination property and lower cost.SOC pattern continues to manufacture Magnetic Sensor above the top-level metallic of asic chip, finally makes Magnetic Sensor and ASIC organically combine, and avoids and adopt lead-in wire method to connect.
When manufacture asic chip, 4-6 layer metal level usually can be adopted; Asic chip and Magnetic Sensor in conjunction with time, after the top-level metallic top metal of asic chip finishes, normally deposit the dielectric layer IMD of 3um again, but there is very large difficulty in the lead-in wire of the IMD of 3um, be difficult to connect.Cause existing preparation technology's process CIMS complicated, preparation time is longer, and preparation cost is higher.
In view of this, nowadays in the urgent need to designing a kind of new magnetic sensing device preparation technology, to overcome the above-mentioned defect of existing magnetic sensing device.
Summary of the invention
Technical problem to be solved by this invention is: the preparation technology providing a kind of magnetic sensing device, asic chip and Magnetic Sensor can be organically combined, and is convenient to draw metal, can improve preparation efficiency and the percentage of A-class goods.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A preparation technology for magnetic sensing device, described preparation technology comprises the steps:
The substrate of step S101, peripheral circuit is provided with the first metal layer or MIM capacitor;
Step S102, on the first metal layer deposition insulation self-stopping technology layer, then deposit first medium material, form through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemico-mechanical polishing planarization, be parked on the second metal level;
Step S104, above insulation self-stopping technology layer or the first metal layer, the side of the second metal level forms groove, and during etching, self-stopping technology is above insulation self-stopping technology layer or the first metal layer;
Step S105, deposition the 3rd dielectric material;
Step S106, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove;
Step S107, deposition of insulative material, form insulation material layer;
Step S108, open window, the electrode on magnetic material is drawn, other electrodes are drawn.
As a preferred embodiment of the present invention, in described step S106, the main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit is arranged near groove, be connected with between magnetic conduction unit or disconnect, or part connects, part disconnects, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are respectively X-axis, Y-axis, Z axis.
As a preferred embodiment of the present invention, described preparation technology also comprises step S109, plated metal, graphically.
As a preferred embodiment of the present invention, in described step S109, the metal level of deposition is as Autonomous test metal level.
As a preferred embodiment of the present invention, described preparation technology also comprises step S110, continues to manufacture layer of dielectric material and metal level.
As a preferred embodiment of the present invention, in described step S101, described the first metal layer is for containing Al or containing Ti electric conducting material.
As a preferred embodiment of the present invention, in described step S105, the 3rd dielectric material is multilayer or individual layer, and the 3rd dielectric material comprises SiOx or SiN or SiOx/SiN material.
As a preferred embodiment of the present invention, in described step S106, magnetic material is also provided with one or more layers protects material layer.
As a preferred embodiment of the present invention, in described step S106, the magnetic material of deposition is AMR material, or is TMR material, or is GMR material.
As a preferred embodiment of the present invention, described preparation technology comprises the steps:
Step S101, containing in the substrate of peripheral circuit, there is the first metal layer; Or, prepare the first metal layer on the substrate;
Step S102, on the first metal layer deposition insulation self-stopping technology layer, then deposit first medium material, form through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemico-mechanical polishing planarization, be parked on the second metal level;
The side of step S104, on the first metal layer side, the second metal level forms groove, and during etching, self-stopping technology is above insulation self-stopping technology layer;
Step S105, deposition the 3rd dielectric material; 3rd dielectric material is multilayer or individual layer, and the 3rd dielectric material comprises SiOx or SiN or SiOx/SiN material;
Step S106, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove; Magnetic material is also provided with one or more layers protects material layer;
The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, be connected with between magnetic conduction unit or disconnect, or part connects, part disconnects, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; First direction, second direction, third direction can be respectively X-axis, Y-axis, Z axis;
Step S107, deposition of insulative material, form insulation material layer;
Step S108, open window, by metal lead wire, the electrode on magnetic material is drawn, by metal lead wire, other electrodes are drawn;
Step S109, plated metal, graphically; Deposition metal level as Autonomous test metal level, in order to realize the self-checking function of magnetic;
Step S110, continuation manufacture one or more layers dielectric layer and metal level.
Beneficial effect of the present invention is: the preparation technology of the magnetic sensing device that the present invention proposes, asic chip and Magnetic Sensor can be organically combined, groove necessary for Z axis in three-axis sensor is arranged on asic chip inside, reduce the thickness of the dielectric layer that ASIC and sensor chip are arranged, after adopting the present invention, just the signal of ASIC can be drawn out to AMR and top-level metallic with stand CMOS, solve a difficult problem for integrated technique, otherwise must be drawn by ASIC signal by technique of windowing and go between twice or thrice, cost is huge; Further, by the solution of multiple self-stopping technology layer, larger window can be had in the process manufacturing groove, obtain smooth groove, avoid the formation of microtrench; The present invention not only can improve preparation efficiency, reduce manufacturing cost, and improves the performance of Z axis transducer, improves product yield.
Accompanying drawing explanation
Fig. 1 is the existing magnetic material of magnetic sensing device and the structural representation of wire.
Fig. 2 is the angle schematic diagram with or without magnetic direction and the sense of current in the situation of outfield.
Fig. 3 is the connection layout of Wheatstone bridge.
Fig. 4 is the schematic diagram after step S103 of the present invention.
Fig. 5 is the schematic diagram after step S104 of the present invention.
Fig. 6 is the schematic diagram after step S105 of the present invention.
Fig. 7 is the device schematic diagram formed after step S106 of the present invention.
Fig. 8 is the schematic diagram of the another kind of device formed after step S106 of the present invention.
Fig. 9 is the schematic diagram after step S107 of the present invention.
Figure 10 is the schematic diagram after step S108 of the present invention.
Figure 11 is the schematic diagram depositing the 4th dielectric material in step S109 of the present invention.
Figure 12 is the schematic diagram preparing metal level in step S109 of the present invention.
Figure 13 is the schematic diagram depositing the 5th dielectric material in step S109 of the present invention and prepare thereafter metal level.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Present invention is disclosed a kind of preparation technology of magnetic sensing device, after deposition second medium material, adopt chemico-mechanical polishing planarization, be parked on the second metal level.Particularly, refer to Fig. 4 to Figure 13, preparation technology of the present invention specifically comprises the steps:
[step S101] refers to Fig. 4, and the substrate 401 containing CMOS has the first metal layer 402; Or, preparing the first metal layer 402 containing in the substrate of peripheral circuit;
[step S102] as shown in Figure 4, on the first metal layer 402, deposition insulation self-stopping technology layer 403, then deposits first medium material 404, forms through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level 406; If do not deposit insulation self-stopping technology layer 403, follow-up etching groove can be parked on the first metal layer 402.
[step S103], please continue to refer to Fig. 4, deposition second medium material 405, adopts chemico-mechanical polishing planarization, is parked on the second metal level 406;
[step S104] refers to Fig. 5, and above the first metal layer 402, the side of the second metal level 406 forms groove 407, and during etching, self-stopping technology is above insulation self-stopping technology layer 403; If do not deposit insulation self-stopping technology layer 403 in step [step S102], this step is groove etched can be parked on the first metal layer 402.
[step S105] refers to Fig. 6, deposition the 3rd dielectric material 408;
[step S106] refers to Fig. 7, Fig. 8, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer 409 of sensing unit, and form magnetic conduction unit 410 by the application of groove 407.
The main part of described magnetic conduction unit 410 is arranged in groove 407, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove 407, be connected (as shown in Figure 7) with between magnetic conduction unit 410 or disconnect (as shown in Figure 8), or part connects, part disconnects, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit 410 exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit 410; First direction, second direction, third direction are mutually vertical between two.In the present embodiment, first direction, second direction, third direction can be respectively X-axis, Y-axis, Z axis.
[step S107] refers to Fig. 9, deposition of insulative material, forms insulation material layer 411;
[step S108] refers to Figure 10, opens window, is drawn by the electrode on flux material layer (such as AMR, or GMR, or TMR), drawn by other electrodes by metal lead wire 413 by metal lead wire 412.
[step S109] continues to manufacture layer of dielectric material and metal level as required.
Refer to Figure 11, deposition the 4th dielectric material 414; Then prepare metal level 415, as shown in figure 12; Continue deposition the 5th dielectric material 416, then prepare metal level 417, as shown in figure 13.
It should be noted that, in the present embodiment, as shown in Figure 10 to Figure 13, containing the metal do not etched in groove; This is mainly limited to actual etching technics, may not etched completely by the metal in groove, does not just mention to state simplification and illustrate in the drawings.
In sum, the preparation technology of the magnetic sensing device that the present invention proposes, asic chip and Magnetic Sensor can be organically combined, groove necessary for Z axis in three-axis sensor is arranged on asic chip inside, reduce the thickness of the dielectric layer that ASIC and sensor chip are arranged, after adopting the present invention, just the signal of ASIC can be drawn out to AMR and top-level metallic with stand CMOS, solve a difficult problem for integrated technique, otherwise must be drawn by ASIC signal by technique of windowing and go between twice or thrice, cost is huge; Further, by the solution of multiple self-stopping technology layer, larger window can be had in the process manufacturing groove, obtain smooth groove, avoid the formation of microtrench; The present invention not only can improve preparation efficiency, reduce manufacturing cost, and improves the performance of Z axis transducer, improves product yield.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or substantive characteristics, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (9)
1. a preparation technology for magnetic sensing device, is characterized in that, described preparation technology comprises the steps:
The substrate of step S101, peripheral circuit is provided with the first metal layer or MIM capacitor;
Step S102, on the first metal layer deposition insulation self-stopping technology layer, then deposit first medium material, form through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemico-mechanical polishing planarization, be parked on the second metal level;
Step S104, above insulation self-stopping technology layer or the first metal layer, the side of the second metal level forms groove, and during etching, self-stopping technology is above insulation self-stopping technology layer or the first metal layer;
Step S105, deposition the 3rd dielectric material;
Step S106, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove;
Step S107, deposition of insulative material, form insulation material layer;
Step S108, open window, the electrode on magnetic material is drawn, other electrodes are drawn.
2. the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
In described step S106, the main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit is arranged near groove, be connected with between magnetic conduction unit or disconnect, or part connects, part disconnects, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are respectively X-axis, Y-axis, Z axis.
3. the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
Described preparation technology also comprises step S109, plated metal, graphically.
4. the preparation technology of magnetic sensing device according to claim 3, is characterized in that:
In described step S109, the metal level of deposition is as Autonomous test metal level.
5. the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
Described preparation technology also comprises step S110, continues to manufacture layer of dielectric material and metal level.
6. the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
In described step S101, described the first metal layer is for containing Al or containing Ti material.
7. the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
In described step S105, the 3rd dielectric material is multilayer or individual layer, and the 3rd dielectric material comprises SiOx or SiN or SiOx/SiN material.
8. the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
In described step S106, magnetic material is also provided with one or more layers protects material layer.
9. the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
In described step S106, the magnetic material of deposition is AMR material, or is TMR material, or is GMR material.10, the preparation technology of magnetic sensing device according to claim 1, is characterized in that:
Described preparation technology comprises the steps:
Step S101, containing in the substrate of peripheral circuit, there is the first metal layer; Or, prepare the first metal layer on the substrate;
Step S102, on the first metal layer deposition insulation self-stopping technology layer, then deposit first medium material, form through hole, deposit metallic material, and graphically, photoetching, forms metallic pattern, as the second metal level;
Step S103, deposition second medium material, adopt chemico-mechanical polishing planarization, be parked on the second metal level;
The side of step S104, on the first metal layer side, the second metal level forms groove, and during etching, self-stopping technology is above insulation self-stopping technology layer;
Step S105, deposition the 3rd dielectric material; 3rd dielectric material is multilayer or individual layer, and the 3rd dielectric material comprises SiOx or SiN or SiOx/SiN material;
Step S106, deposition magnetic material, graphically; Generate the figure of Magnetic Sensor, form the flux material layer of sensing unit, and form magnetic conduction unit by the application of groove; Magnetic material is also provided with one or more layers protects material layer;
The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, be connected with between magnetic conduction unit or disconnect, or part connects, part disconnects, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; First direction, second direction, third direction can be respectively X-axis, Y-axis, Z axis;
Step S107, deposition of insulative material, form insulation material layer;
Step S108, open window, by metal lead wire, the electrode on magnetic material is drawn, by metal lead wire, other electrodes are drawn;
Step S109, plated metal, graphically; Deposition metal level as Autonomous test metal level, in order to realize the self-checking function of magnetic, or in order to realize SET/RESET function;
Step S110, continuation manufacture one or more layers dielectric layer and metal level.
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| CN201410027240.0A CN104795490A (en) | 2014-01-21 | 2014-01-21 | Preparation technology of magnetic sensor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050270020A1 (en) * | 2004-06-03 | 2005-12-08 | Honeywell International Inc. | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device |
| CN101540337A (en) * | 2008-03-18 | 2009-09-23 | 株式会社理光 | Magnetic sensor and mobile information terminal apparatus |
| CN102918413A (en) * | 2010-03-31 | 2013-02-06 | 艾沃思宾技术公司 | Process integration of a single chip three axis magnetic field sensor |
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2014
- 2014-01-21 CN CN201410027240.0A patent/CN104795490A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050270020A1 (en) * | 2004-06-03 | 2005-12-08 | Honeywell International Inc. | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device |
| CN101540337A (en) * | 2008-03-18 | 2009-09-23 | 株式会社理光 | Magnetic sensor and mobile information terminal apparatus |
| CN102918413A (en) * | 2010-03-31 | 2013-02-06 | 艾沃思宾技术公司 | Process integration of a single chip three axis magnetic field sensor |
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Application publication date: 20150722 |