CN104795463A - 一种生产异质结太阳能电池的pecvd设备及工作方法 - Google Patents
一种生产异质结太阳能电池的pecvd设备及工作方法 Download PDFInfo
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- CN104795463A CN104795463A CN201410025655.4A CN201410025655A CN104795463A CN 104795463 A CN104795463 A CN 104795463A CN 201410025655 A CN201410025655 A CN 201410025655A CN 104795463 A CN104795463 A CN 104795463A
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 130
- 230000005540 biological transmission Effects 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims description 72
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 10
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- 238000002360 preparation method Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 4
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- 238000009776 industrial production Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 13
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- 239000010408 film Substances 0.000 description 9
- 238000013461 design Methods 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
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- 230000033001 locomotion Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
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- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- 230000000996 additive effect Effects 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410025655.4A CN104795463B (zh) | 2014-01-21 | 2014-01-21 | 一种生产异质结太阳能电池的pecvd设备及工作方法 |
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CN201410025655.4A CN104795463B (zh) | 2014-01-21 | 2014-01-21 | 一种生产异质结太阳能电池的pecvd设备及工作方法 |
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CN104795463A true CN104795463A (zh) | 2015-07-22 |
CN104795463B CN104795463B (zh) | 2017-02-15 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108004525A (zh) * | 2016-11-01 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 托盘、反应腔室、半导体加工设备 |
CN109003934A (zh) * | 2017-06-06 | 2018-12-14 | 泰姆普雷斯艾普公司 | 晶圆夹持器组件、系统及其用途 |
CN110656323A (zh) * | 2019-09-27 | 2020-01-07 | 上海理想万里晖薄膜设备有限公司 | 用于制造hit太阳能电池的cvd设备、成套cvd设备及镀膜方法 |
CN110735125A (zh) * | 2019-09-27 | 2020-01-31 | 上海理想万里晖薄膜设备有限公司 | 用于制造异质结太阳能电池的pecvd设备及镀膜方法 |
CN112391608A (zh) * | 2020-11-13 | 2021-02-23 | 宁波沁圆科技有限公司 | Cvd处理系统及处理方法 |
CN114645264A (zh) * | 2022-03-14 | 2022-06-21 | 上海德瀛睿创半导体科技有限公司 | 镀膜系统 |
EP3997741B1 (de) | 2019-09-05 | 2023-03-29 | Meyer Burger (Germany) GmbH | Rückseitenemitter-solarzellenstruktur mit einem heteroübergang sowie verfahren und vorrichtung zur herstellung derselben |
US11967662B2 (en) | 2019-09-05 | 2024-04-23 | Meyer Burger (Germany) Gmbh | Backside emitter solar cell structure having a heterojunction and method and device for producing the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5609737A (en) * | 1993-08-24 | 1997-03-11 | Frontec Incorporated | Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputtering |
JP2002280588A (ja) * | 2001-03-21 | 2002-09-27 | Kanegafuchi Chem Ind Co Ltd | インライン型cvd装置および製膜方法 |
CN201834965U (zh) * | 2010-11-05 | 2011-05-18 | 理想能源设备(上海)有限公司 | 一种用于生产薄膜太阳能电池的化学气相沉积系统 |
CN202643839U (zh) * | 2012-06-25 | 2013-01-02 | 吉富新能源科技(上海)有限公司 | 一种用于异质结太阳能电池等离子化学气相沉积系统 |
-
2014
- 2014-01-21 CN CN201410025655.4A patent/CN104795463B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5609737A (en) * | 1993-08-24 | 1997-03-11 | Frontec Incorporated | Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputtering |
JP2002280588A (ja) * | 2001-03-21 | 2002-09-27 | Kanegafuchi Chem Ind Co Ltd | インライン型cvd装置および製膜方法 |
CN201834965U (zh) * | 2010-11-05 | 2011-05-18 | 理想能源设备(上海)有限公司 | 一种用于生产薄膜太阳能电池的化学气相沉积系统 |
CN202643839U (zh) * | 2012-06-25 | 2013-01-02 | 吉富新能源科技(上海)有限公司 | 一种用于异质结太阳能电池等离子化学气相沉积系统 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108004525A (zh) * | 2016-11-01 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 托盘、反应腔室、半导体加工设备 |
CN108004525B (zh) * | 2016-11-01 | 2020-04-28 | 北京北方华创微电子装备有限公司 | 托盘、反应腔室、半导体加工设备 |
CN109003934A (zh) * | 2017-06-06 | 2018-12-14 | 泰姆普雷斯艾普公司 | 晶圆夹持器组件、系统及其用途 |
CN109003934B (zh) * | 2017-06-06 | 2024-03-19 | 泰姆普雷斯艾普公司 | 晶圆夹持器组件、系统及其用途 |
EP3997741B1 (de) | 2019-09-05 | 2023-03-29 | Meyer Burger (Germany) GmbH | Rückseitenemitter-solarzellenstruktur mit einem heteroübergang sowie verfahren und vorrichtung zur herstellung derselben |
EP4203078A1 (de) | 2019-09-05 | 2023-06-28 | Meyer Burger (Germany) GmbH | Rückseitenemitter-solarzellenstruktur mit einem heteroübergang |
US11967662B2 (en) | 2019-09-05 | 2024-04-23 | Meyer Burger (Germany) Gmbh | Backside emitter solar cell structure having a heterojunction and method and device for producing the same |
CN110656323A (zh) * | 2019-09-27 | 2020-01-07 | 上海理想万里晖薄膜设备有限公司 | 用于制造hit太阳能电池的cvd设备、成套cvd设备及镀膜方法 |
CN110735125A (zh) * | 2019-09-27 | 2020-01-31 | 上海理想万里晖薄膜设备有限公司 | 用于制造异质结太阳能电池的pecvd设备及镀膜方法 |
CN112391608A (zh) * | 2020-11-13 | 2021-02-23 | 宁波沁圆科技有限公司 | Cvd处理系统及处理方法 |
CN114645264A (zh) * | 2022-03-14 | 2022-06-21 | 上海德瀛睿创半导体科技有限公司 | 镀膜系统 |
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Effective date of registration: 20170401 Address after: 201203 Shanghai city Songjiang District Sixian Road No. 3255, building 3, Room 403 Patentee after: SHANGHAI LIXIANG WANLIHUI FILM EQUIPMENT Co.,Ltd. Address before: 201203 Curie Road, Shanghai, Pudong New Area, No. 1 Patentee before: SHANGHAI LIXIANG WANLIHUI FILM EQUIPMENT Co.,Ltd. Patentee before: Ideal Energy Equipment (Shanghai) Ltd. |
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Address after: 201306 plant 3, Lane 2699, Jiangshan Road, Lingang xinpian District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Ideal Wanlihui Semiconductor Equipment (Shanghai) Co.,Ltd. Address before: Room 403, Building 3, No. 3255, Sixian Road, Songjiang District, Shanghai, March 2012 Patentee before: SHANGHAI LIXIANG WANLIHUI FILM EQUIPMENT Co.,Ltd. |