CN104779330A - Light-emitting diode structure and manufacturing method thereof - Google Patents
Light-emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN104779330A CN104779330A CN201510217070.7A CN201510217070A CN104779330A CN 104779330 A CN104779330 A CN 104779330A CN 201510217070 A CN201510217070 A CN 201510217070A CN 104779330 A CN104779330 A CN 104779330A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 230000007547 defect Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 38
- 229910002601 GaN Inorganic materials 0.000 claims description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 35
- 150000004767 nitrides Chemical class 0.000 claims description 31
- 229910052782 aluminium Inorganic materials 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- 239000004411 aluminium Substances 0.000 claims description 28
- 238000003475 lamination Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 21
- 238000005240 physical vapour deposition Methods 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 3
- HTCXJNNIWILFQQ-UHFFFAOYSA-M emmi Chemical compound ClC1=C(Cl)C2(Cl)C3C(=O)N([Hg]CC)C(=O)C3C1(Cl)C2(Cl)Cl HTCXJNNIWILFQQ-UHFFFAOYSA-M 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 2
- 230000034655 secondary growth Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H01L21/203—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a light-emitting diode structure and a manufacturing method thereof. A secondary growth mode is adopted, and an aluminum nitride layer is manufactured and inserted, stops expansion of bottom layer defects and reduces wafer warpage caused by thermal reaction; meanwhile, patterning treatment is performed on the aluminum nitride layer so as to improve the light emitting efficiency of the light-emitting diode.
Description
Technical field
The present invention relates to structure of a kind of light-emitting diode and preparation method thereof.
Background technology
Light-emitting diode has the advantage such as energy-saving and environmental protection, life-span length, has been widely used in the fields such as backlight, outdoor display, Landscape Lighting and general lighting.But most extensive use is that blue light source+yellow fluorescent material produces white light on lighting apparatus, and blue-light device main is at present gallium nitride semiconductor, its epitaxial growth mainly contains isoepitaxial growth and heteroepitaxial growth, the substrate of isoepitaxial growth employing and nitride-based semiconductor Lattice Matching grows, as gallium nitride substrate, heteroepitaxial growth adopts and grows, as Sapphire Substrate, silicon substrate etc. with the substrate of nitride-based semiconductor lattice mismatch.The crystal defect that right lattice mismatch causes has comparatively serious harmful effect for follow-up chip performance.
Along with the maturation of gallium nitride technology, large-size substrate (4 inches or 6 inches) has started as each manufacturer uses, and the increase of its size will contribute to the decline of cost.But along with the increase of substrate size, in epitaxial process, the warpage of wafer is then more obvious, thus easily cause the defect of Waffer edge so that the decline of core grain yield, therefore how to control and to suppress the generation of stress and defect for existing production, seem quite important.
Summary of the invention
For the problems referred to above, the present invention proposes a kind of light emitting diode construction and preparation method thereof, utilize secondary pattern of growth, make and insert one deck aln layer and be patterned process, by this layer stop because of substrate and subsequent epitaxial layer lattice mismatch cause the extension of defect and improve the chip warpage phenomenon that stress produces; The pattern structure on aln layer surface, can further improve the luminous efficiency of light-emitting diode simultaneously.
The technical scheme that the present invention solves the problem is: a kind of preparation method of light-emitting diode, comprises the following steps:
Step 1. provides a substrate;
Step 2. utilizes secondary flop-in method buffer layer at described substrate surface;
Step 3. forms light emitting diode construction at described buffer-layer surface successively deposited n-type layer, quantum well layer and P-type layer; Wherein, secondary flop-in method buffer layer is utilized to be specially at substrate surface in described step 2: described substrate is inserted MOCVD by step 2.1., and (English is Metal Organic Chemical Vapor Deposition, be called for short MOCVD) board chamber, utilize mocvd method to be deposited as stratum nucleare at described substrate surface; Step 2.2. continues to utilize mocvd method to deposit undoped or doping the first gallium nitride layer on described nucleating layer surface, with the epitaxial loayer stopped and cushion substrate and subsequent deposition because lattice does not mate defect and the stress of generation; Wafer after step 2.2 terminates by step 2.3. takes out and inserts physical vapour deposition (PVD) (English is Physical Vapor Deposition, be called for short PVD) board chamber, utilize PVD method at described undoped or doping the first gallium nitride layer surface deposition aln layer;
Wafer after step 2.2 terminates by step 2.4. takes out, and in described aln layer surface pattern-making, forms pattern nitride aluminium lamination, with the epitaxial loayer stopped and cushion substrate and subsequent deposition because lattice does not mate defect and the stress of generation;
Wafer after step 2.2 terminates by step 2.5. takes out and again inserts MOCVD chamber, utilize mocvd method at described pattern nitride aluminium lamination surface deposition undoped or doping the second gallium nitride layer, utilize the lattice defect that the reparation of gallium atom causes subsequent deposition gallium nitride semiconductor layers because of aln layer rough surface.
Preferably, in described step 2.1, nucleating layer thickness is 50 ~ 300 Ethylmercurichlorendimides.
Preferably, in described step 2.3, pattern nitride aluminum layer thickness is 1 ~ 10000 Ethylmercurichlorendimide.
Preferably, in described step 2.4, the bottom portion spacing on pattern nitride aluminium lamination surface is 0 ~ 1000 micron.
Preferably, described undoped or doping the first gallium nitride layer and the second gallium nitride layer thickness range be 0.5 ~ 5 micron.
Preferably, in described step 2.4, the pattern on pattern nitride aluminium lamination surface is circular, square, polygon or irregular shape.
Preferably, in described step 2.4, the pattern on pattern nitride aluminium lamination surface adopts gold-tinted micro-photographing process and etching technique to be prepared from.
Preferably, described etching technique is dry etching or wet etching or its combination.
Simultaneously, the present invention proposes a kind of light emitting diode construction for solving the problem, comprise: substrate, resilient coating, N-type layer, quantum well layer and P-type layer, wherein said resilient coating is made up of nucleating layer, undoped or doping the first gallium nitride layer, pattern nitride aluminium lamination, undoped or doping the second gallium nitride layer.
The present invention at least has following beneficial effect: after the present invention first utilizes mocvd method to deposit the gallium nitride layer of a surfacing, recycling PVD method is at this flat surface cvd nitride aluminium lamination and be patterned process, this layer is utilized to stop crystal defect because epitaxial loayer and the substrate lattice mismatch of subsequent deposition produces, the total quality of raising subsequent epitaxial layer; Meanwhile, utilize this pattern nitride aluminium lamination to the adjustment of light reflection and refraction angle, improve luminous efficiency further.And because the chip warpage phenomenon that the material behavior of PVD method cvd nitride aluminium lamination makes this layer can effectively alleviate and improve stress to be produced, reduce the defect of Waffer edge, promote the yield of chip.
In addition, the aln layer due to PVD method deposition has the high-quality thin film characteristic that low temperature is grown up, and both can utilize dry etching that wet etching also can be utilized to be patterned process, and its efficiency is fast, and the time is short; And PVD sedimentation has characteristic simple to operation compared with MOCVD sedimentation.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the light emitting diode construction schematic diagram of the embodiment of the present invention.
Fig. 2 is the buffer layer structure schematic diagram of the embodiment of the present invention.
Fig. 3 is the pattern nitride aluminium lamination preparation flow schematic diagram of the embodiment of the present invention.
Fig. 4 is the effect schematic diagram of the aln layer stop defect of the embodiment of the present invention.
In figure: 10. substrate; 20. resilient coatings; 21. nucleating layers; 22. first gallium nitride layers; 23. aln layers; 23 ＇. pattern nitride aluminium lamination; 24. second gallium nitride layers; 30. N-type layer; 40. quantum well layers; 50. P-type layer; A. photoresist layer; B. reticle plate; C. exposure light source.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in detail.
embodiment
Referring to accompanying drawing 1, a kind of light emitting diode construction comprises substrate 10, be deposited on the resilient coating 20 on substrate 10, N-type layer 30, quantum well layer 40 and P-type layer 50, wherein resilient coating 20 is made up of nucleating layer 21, undoped or doping the first gallium nitride layer 22, aln layer 23, undoped or doping the second gallium nitride layer 24; Described aln layer 23 surface is pattern structure, form pattern nitride aluminium lamination 23 ＇, utilize this pattern nitride aluminium lamination 23 ＇ effectively can discharge the stress of the epitaxial loayer that the N-type layer 30 of subsequent deposition, quantum well layer 40 and P-type layer 50 form, reduce the chip warpage that this stress causes, improve the core grain electrical property of Waffer edge, promote core grain yield; This pattern nitride aluminium lamination 23 ＇ also can stop the extension of the crystal defect caused because of lattice mismatch between the resilient coating 20 of preceding deposition and substrate 10 simultaneously, and then improves the lattice quality of subsequent semiconductor layer, improves luminous efficiency.
And the method that the present embodiment prepares above-mentioned light emitting diode construction adopts following steps:
Step 1. provides a substrate 10; Described substrate 10 is patterned substrate or the plain film substrates such as sapphire, silicon, carborundum, herein preferred sapphire patterned substrate;
Step 2. utilizes secondary flop-in method buffer layer 20 on described substrate 10 surface;
Step 3. forms light emitting diode construction on described resilient coating 20 surface successively deposited n-type layer 30, quantum well layer 40 and P-type layer 50;
Wherein, (referring to accompanying drawing 2), utilizes secondary flop-in method buffer layer 20 to be specially on substrate 10 surface in described step 2:
Described substrate 10 is inserted MOCVD board chamber by step 2.1., utilizes mocvd method to be the nucleating layer 21 of 50 ~ 300 Ethylmercurichlorendimides at described substrate 10 surface deposition thickness;
Step 2.2. continues on described nucleating layer 21 surface to utilize mocvd method deposit thickness to be the undoped of 0.5 ~ 5 micron or first gallium nitride layer 22 that adulterates;
Wafer after step 2.2 terminates by step 2.3. takes out and inserts PVD chamber, utilizes PVD method to be the aln layer 23 of 1 ~ 10000 dust at described undoped or doping the first gallium nitride layer 22 surface deposition thickness;
Step 2.4.(is referring to accompanying drawing 3), wafer after step 2.3 being terminated takes out, first utilize micro-shadow gold-tinted technology, namely first tile a photoresist layer A, utilize reticle plate B and exposure light source C to form required pattern, re-use etching technique and prepare predetermined pattern at aln layer 23 surface etching, form pattern nitride aluminium lamination 23 ＇, described pattern nitride aluminium lamination 23 ＇ surface adjacent patterns bottom space is 0 ~ 1000 micron, and pattern is circular, square, polygon or irregular shape; This engraving method both can be the dry etching that cost is higher, can be also simple wet etching, or combinationally use both it; When using wet etching, such as, AlN is immersed in NaOH solution, the etch-rate of 1nm/min can be reached at 30 ~ 60 DEG C, effectively improve throughput rate.
Wafer after step 2.4 terminates by step 2.5. again takes out and inserts MOCVD chamber, utilizes mocvd method to be undoped second gallium nitride layer 24 of 0.5 ~ 5 micron at described pattern nitride aluminium lamination 23 ＇ surface deposition thickness.
In this example, first use mocvd method in resilient coating 21 surface deposition undoped or doping the first gallium nitride layer 22, because of this undoped or doping the first gallium nitride layer 22 surfacing, lattice quality is more excellent, so be easy to follow-up PVD method cvd nitride aluminium lamination; Simultaneously, when this undoped or doping the first gallium nitride layer 22 are deposited on patterned substrate surface, then because crystallographic selectivity growth characteristics make only to look unfamiliar to grow at C have more high quality gallium nitride material layer, form smooth upper surface when this layer is covered in substrate figure completely, the aln layer deposited in a step after avoiding is attached to pattern side wall and affects the growth of subsequent nitridation gallium epitaxial loayer.And this undoped or doping the first gallium nitride layer 22 can cushion the stress and defect not mating generation because of substrate and subsequent epitaxial layer crystal lattice and stop first, thus improve the crystal mass of subsequent deposited layers.
Subsequently, this undoped first gallium nitride layer 22 adopt the PVD legal system of tropism's deposition characteristics such as having for aln layer 23, and be patterned process and obtain surperficial tool figuratum pattern nitride aluminium lamination 23 ＇, picture on surface is discontinuous structure or only bottom continuous print structure.Because many properties of crystal lattice that PVD method sedimentary deposit has, and after carrying out patterning, aforesaid pattern nitride aluminium lamination 23 ＇ can cushion and stop because substrate and epitaxial loayer lattice do not mate stress and the defect of generation preferably again, greatly improve the crystal mass of subsequent deposited layers, and utilize figure to the adjustment of light reflection and refraction angle, improve luminous efficiency further.
Finally, utilize mocvd method to deposit undoped or doping the second gallium nitride layer 24 on this pattern nitride aluminium lamination 23 ＇ surface.Because gallium atom and surface migration ability bigger than normal compared with aluminium atomic volume is strong, there is the effect of repairing lattice defect, thus the defect (referring to accompanying drawing 4) that can effectively stop further being extended by aln layer and arrive; In addition because of the property difference of aluminium nitride material and gallium nitride material, therefore contact position between layers also can partly regulate or cushion the stress problem between substrate and the epitaxial loayer of subsequent deposition.Therefore, the present invention can effectively improve chip warpage phenomenon by the structure and preparation method thereof of resilient coating 20, and then reduces the electrical property unnatural proportions of Waffer edge, increases product yield.
Should be understood that, above-mentioned specific embodiments is the preferred embodiments of the present invention, and scope of the present invention is not limited to this embodiment, all any changes done according to the present invention, all belongs within protection scope of the present invention.
Claims (10)
1. a preparation method for light-emitting diode, comprises the following steps:
Step 1. provides a substrate;
Step 2. utilizes secondary flop-in method buffer layer at described substrate surface;
Step 3. forms light emitting diode construction at described buffer-layer surface successively deposited n-type layer, quantum well layer and P-type layer;
It is characterized in that: described step 2 comprises:
Described substrate is inserted MOCVD board chamber by step 2.1., utilizes MOCVD method to be deposited as stratum nucleare at described substrate surface;
Step 2.2. continues to utilize MOCVD method to deposit undoped or doping the first gallium nitride layer on described nucleating layer surface, with the epitaxial loayer stopped and cushion substrate and subsequent deposition because lattice does not mate defect and the stress of generation;
Wafer after step 2.2 terminates by step 2.3. takes out and inserts physical vapour deposition (PVD) board chamber, utilizes physical vaporous deposition at described undoped or doping the first gallium nitride layer surface deposition aln layer;
Wafer after step 2.3 terminates by step 2.4. takes out also in described aln layer surface pattern-making, forms pattern nitride aluminium lamination, with the epitaxial loayer stopped and cushion substrate and subsequent deposition because lattice does not mate defect and the stress of generation;
Wafer after step 2.4 terminates by step 2.5. takes out and again inserts MOCVD board chamber, utilize MOCVD method at described pattern nitride aluminium lamination surface deposition undoped or doping the second gallium nitride layer, utilize the lattice defect that the reparation of gallium atom causes subsequent deposition gallium nitride semiconductor layers because of aln layer rough surface.
2. the preparation method of a kind of light-emitting diode according to claim 1, is characterized in that: in described step 2.1, nucleating layer thickness is 50 ~ 300 Ethylmercurichlorendimides.
3. the preparation method of a kind of light-emitting diode according to claim 1, is characterized in that: in described step 2.3, pattern nitride aluminum layer thickness is 1 ~ 10000 Ethylmercurichlorendimide.
4. the preparation method of a kind of light-emitting diode according to claim 1, is characterized in that: in described step 2.4, the bottom portion spacing on pattern nitride aluminium lamination surface is 0 ~ 1000 micron.
5. the preparation method of a kind of light-emitting diode according to claim 1, is characterized in that: in described step 2.4, the pattern on pattern nitride aluminium lamination surface is circular, square, polygon or irregular shape.
6. the preparation method of a kind of light-emitting diode according to claim 1, is characterized in that: in described step 2.4, the pattern on pattern nitride aluminium lamination surface adopts gold-tinted micro-photographing process and etching technique to be prepared from.
7. the preparation method of a kind of light-emitting diode according to claim 6, is characterized in that: described etching technique is dry etching or wet etching or its combination.
8. the preparation method of a kind of light-emitting diode according to claim 1, is characterized in that: described undoped or doping the first gallium nitride layer and the second gallium nitride layer thickness range be 0.5 ~ 5 micron.
9. a light emitting diode construction, comprise: substrate, resilient coating, N-type layer, quantum well layer and P-type layer, is characterized in that: described resilient coating is made up of nucleating layer, undoped or doping the first gallium nitride layer, pattern nitride aluminium lamination, undoped or doping the second gallium nitride layer.
10. a light emitting diode construction, is characterized in that: adopt the preparation method of any one light-emitting diode described in the claims 1 ~ 8 to obtain.
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| CN201510217070.7A CN104779330B (en) | 2015-04-29 | 2015-04-29 | A kind of light emitting diode construction and preparation method thereof |
| PCT/CN2016/077838 WO2016173359A1 (en) | 2015-04-29 | 2016-03-30 | Light-emitting diode structure and preparation method therefor |
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| CN201510217070.7A CN104779330B (en) | 2015-04-29 | 2015-04-29 | A kind of light emitting diode construction and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016173359A1 (en) * | 2015-04-29 | 2016-11-03 | 厦门市三安光电科技有限公司 | Light-emitting diode structure and preparation method therefor |
| CN109509818A (en) * | 2018-09-25 | 2019-03-22 | 华灿光电(苏州）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
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| JP2006140357A (en) * | 2004-11-12 | 2006-06-01 | Mitsubishi Cable Ind Ltd | Nitride semiconductor light emitting device |
| US20070241352A1 (en) * | 2004-06-18 | 2007-10-18 | Showa Denko K. K. | Group III Nitride Semiconductor Light Emitting Device |
| US20080279242A1 (en) * | 2007-05-07 | 2008-11-13 | Bour David P | Photonic crystal structures and methods of making and using photonic crystal structures |
| CN102244168A (en) * | 2010-05-14 | 2011-11-16 | 展晶科技(深圳)有限公司 | LED (light emitting diode) and manufacturing method thereof |
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| CN100563037C (en) * | 2008-07-30 | 2009-11-25 | 鹤山丽得电子实业有限公司 | A kind of light-emitting diode chip for backlight unit and manufacture method thereof |
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| CN104037284B (en) * | 2014-06-10 | 2016-11-02 | 广州市众拓光电科技有限公司 | A kind of growth GaN film on a si substrate and preparation method thereof |
| CN104103720A (en) * | 2014-07-24 | 2014-10-15 | 安徽三安光电有限公司 | Method for preparing nitride semiconductor |
| CN104779330B (en) * | 2015-04-29 | 2018-03-27 | 安徽三安光电有限公司 | A kind of light emitting diode construction and preparation method thereof |
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- 2015-04-29 CN CN201510217070.7A patent/CN104779330B/en active Active
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Patent Citations (4)
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| US20070241352A1 (en) * | 2004-06-18 | 2007-10-18 | Showa Denko K. K. | Group III Nitride Semiconductor Light Emitting Device |
| JP2006140357A (en) * | 2004-11-12 | 2006-06-01 | Mitsubishi Cable Ind Ltd | Nitride semiconductor light emitting device |
| US20080279242A1 (en) * | 2007-05-07 | 2008-11-13 | Bour David P | Photonic crystal structures and methods of making and using photonic crystal structures |
| CN102244168A (en) * | 2010-05-14 | 2011-11-16 | 展晶科技(深圳)有限公司 | LED (light emitting diode) and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016173359A1 (en) * | 2015-04-29 | 2016-11-03 | 厦门市三安光电科技有限公司 | Light-emitting diode structure and preparation method therefor |
| CN109509818A (en) * | 2018-09-25 | 2019-03-22 | 华灿光电(苏州）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
Also Published As
| Publication number | Publication date |
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| CN104779330B (en) | 2018-03-27 |
| WO2016173359A1 (en) | 2016-11-03 |
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