CN203910840U - LED epitaxial wafer grown on Si patterned substrate - Google Patents
LED epitaxial wafer grown on Si patterned substrate Download PDFInfo
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- CN203910840U CN203910840U CN201420307767.4U CN201420307767U CN203910840U CN 203910840 U CN203910840 U CN 203910840U CN 201420307767 U CN201420307767 U CN 201420307767U CN 203910840 U CN203910840 U CN 203910840U
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
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- 238000000576 coating method Methods 0.000 claims description 16
- 238000002835 absorbance Methods 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 36
- 238000005229 chemical vapour deposition Methods 0.000 description 14
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- 239000010408 film Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
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- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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Abstract
The utility model discloses an LED epitaxial wafer grown on a Si patterned substrate. The Si patterned substrate is included, the crystal orientation of the Si patterned substrate is (111), and multiple patterned projections of the same shape are distributed on the Si patterned substrate. An AlN buffer layer, an AlGaN stepping buffer layer, a u-GaN layer, an n-GaN layer, an InGaN/GaN quantum well layer and a p-GaN layer are successively grown on the Si patterned substrate; and cavities are respectively formed at the tops of the patterned projections. According to the utility model, the Si substrate is used, the patterned substrate is combined with cavities, transversely epitaxial growth of a film is prompted, the crystallization quality is improved, stress is alleviated to solve the crack problem, the absorbance difficulty of the Si patterned substrate is avoided, and the obtained LED epitaxial wafer is high in photoelectric performance and crystal quality and can be applied to LED devices.
Description
Technical field
The utility model relates to LED epitaxial wafer, particularly a kind of LED epitaxial wafer in Si graph substrate and preparation method thereof that is grown in.
Background technology
LED is the product of advocating under the social background of energy-saving and emission-reduction, and its environmental protection, energy-conservation, anti-seismic performance good, in following illumination market, has a extensive future, be described as the 4th generation green illumination light source.
GaN, as one of third generation semi-conducting material representative, has the excellent properties such as direct band gap, broad stopband, high saturated electron drift velocity, high breakdown electric field and high heat conductance, has obtained paying close attention to widely aspect microelectronic applications.From I.Akasaki, successfully obtain first p-GaN, realize after the new breakthrough of blue-ray LED, GaN based compound is the main material of preparation LED device always, in fields such as room lighting, commercial lighting, engineering illuminations, has a wide range of applications.
High-quality GaN material is generally all made by heteroepitaxy method.As the substrate that is usually used in growing GaN, sapphire has stable physicochemical properties, but has very large lattice mismatch (16%) and thermal mismatching (25%) between it and GaN, causes the GaN film quality of growth poor; Although the lattice mismatch of SiC and GaN only 3.5%, thermal conductivity is higher, and its thermal mismatching and sapphire be (25.6%) quite, poor with the wetability of GaN, expensive, and the monopolization of epitaxy technology Yi Bei U.S. Creat Company, therefore also cannot generally use.Compare down, Si graph substrate has the various features such as cost is low, monocrystalline size is large and quality is high, thermal conductivity is high, electric conductivity is good, and the microelectric technique of Si is very ripe, in Si graph substrate, growing GaN film is expected to realize photoelectron and microelectronic integrated.
Exactly because the above-mentioned plurality of advantages of Si graph substrate, in Si graph substrate, growing GaN film and then preparation LED epitaxial wafer more and more receive much concern.But, in Si graph substrate, prepare the quality of GaN monocrystal thin films at present not as Sapphire Substrate, mainly due to: Si and GaN thermal mismatching, far away higher than sapphire, cause epitaxial wafer to be easier to be full of cracks; Si graph substrate is met active N and in interface, is easily formed unbodied SixNy, affects the growth quality of GaN; Si also can reduce LED luminous efficiency greatly to the absorption of visible ray.
As can be seen here, the advantages such as cost is low even if Si graph substrate has, good heat dissipation, there is very good development prospect, but will be in Si graph substrate growing high-quality GaN film and then preparation LED epitaxial wafer, need to find new method and the technique of the LED epitaxial wafer of growing in Si graph substrate.
Utility model content
In order to overcome the above-mentioned shortcoming and deficiency of prior art, the purpose of this utility model is to provide the LED epitaxial wafer in a kind of Si of being grown in graph substrate, has the advantages that photoelectric properties are good, crystal mass is high.
Realizing the purpose of this utility model can be by taking following technical scheme to reach:
Be grown in the LED epitaxial wafer in Si graph substrate, it is characterized in that: it comprises Si graph substrate, the crystal orientation of described Si graph substrate is (111), is distributed with the figure projection that several shapes are identical on it; In described Si graph substrate, growth has AlN resilient coating, AlGaN stepping resilient coating, u-GaN layer, n-GaN layer, InGaN/GaN quantum well layer and p-GaN layer successively; Top in each figure projection is formed with cavity.
Preferably, described AlGaN stepping resilient coating comprises three layers, is from bottom to top followed successively by: an AlGaN layer, the 2nd AlGaN layer and the 3rd AlGaN layer; Wherein, the thickness of an AlGaN layer is 80-150nm; The thickness of the 2nd AlGaN layer is 100-200nm; The thickness of the 3rd AlGaN layer is 200-300nm; In the one AlGaN layer, the 2nd AlGaN layer and the 3rd AlGaN layer, the doping of Al reduces successively.
Preferably, the arrangement mode of described figure projection is that rectanglar arrangement or hexagon are arranged.
Preferably, described figure projection is hemisphere or circular cone, and its height H is 1-1.2 μ m, and back gauge d is 1-3 μ m, and bottom width w is 1.5-3 μ m.
Preferably, the thickness of described AlN resilient coating is 10-100nm.
Preferably, described cavity is distributed in the top of figure projection, and cavity height h is 10-100nm.
Preferably, described u-GaN layer thickness is 1-1.5 μ m.
The beneficial effects of the utility model are:
(1) the utility model adopts Si graph substrate growth LED epitaxial wafer, promotes the cross growth of GaN film, to promote the crystal mass of LED epitaxial wafer, reduces dislocation density.
(2) three layers of AlGaN stepping resilient coating that the utility model is used, can effectively alleviate the tensile stress causing because of lattice mismatch huge between GaN and Si and thermal mismatching, and extension goes out flawless GaN film, reduces leakage current, improves the electric property of LED.
(3) cavity that the utility model is introduced in Si graph substrate figure projection, can further discharge stress, effectively solves the intrinsic crack problem of Si graph substrate growing epitaxial sheet; In addition, use the total reflection effect at cavity and GaN interface, can effectively photon reflection be returned back to top to portion and by Si graph substrate, do not absorbed, significantly promote the light efficiency of LED.
In sum, it is substrate that the utility model is used Si, simultaneously in conjunction with graph substrate and cavity, promote the transversal epitaxial growth of film, promote crystalline quality, effectively relieve stresses situation to be to solve crack problem, and evades the extinction difficult point of Si graph substrate, the LED epitaxial wafer photoelectric properties that obtain are good, crystal mass is high, are applicable to being applied in LED device.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section that is grown in the LED epitaxial wafer in Si graph substrate of embodiment 1.
Fig. 2 is the schematic diagram of the Si graph substrate of embodiment 1.
Fig. 3 is the LED epitaxial wafer X ray backswing allusion quotation line chart in Si graph substrate that is grown in of embodiment 1.
Fig. 4 is the LED epitaxial wafer X ray swing curve figure in Si graph substrate that is grown in of embodiment 2.
Fig. 5 is the schematic diagram of the Si graph substrate of embodiment 3.
Fig. 6 is the LED epitaxial wafer X ray swing curve figure in Si graph substrate that is grown in of embodiment 3.
Embodiment
Below, in conjunction with embodiment, the utility model is described further:
Embodiment 1:
Please refer to Fig. 1-Fig. 3, a kind of LED epitaxial wafer being grown in Si graph substrate of the present utility model, it comprises Si graph substrate 11, the crystal orientation of described Si graph substrate 11 is (111), is distributed with the figure projection 11-1 that several shapes are identical on it; In described Si graph substrate 11, growth has AlN resilient coating 12, AlGaN stepping resilient coating 13, u-GaN layer 15, n-GaN layer 16, InGaN/GaN quantum well layer 17 and p-GaN layer 18 successively; Top at each figure projection 11-1 is formed with cavity 14.
Figure projection 11-1 is shaped as hemisphere, and hemisphere height H is 1 μ m, and back gauge d is 1 μ m, and bottom width w is 1.5 μ m; Arrangement mode is rectanglar arrangement.
LED epitaxial wafer in the above-mentioned Si of being grown in graph substrate is adopted with the following method and is obtained:
(1) substrate with and the choosing of crystal orientation: adopt Si graph substrate, choose (111) face.
(2) adopt the thick AlN resilient coating of metal organic chemical vapor deposition technique growth 20nm, process conditions are: underlayer temperature is 860 ℃, and chamber pressure is 50Torr, and V/III ratio is 2000, and the speed of growth is 0.2 μ m/h.
(3) adopt metal organic chemical vapor deposition technique growth AlGaN stepping resilient coating, process conditions are: keeping substrate is 960 ℃, and chamber pressure is 50Torr, NH
3flow is 10slm, and TMAl flow is under 200sccm condition, and TMGa flow is 5sccm, and the speed of growth is 0.1 μ m/h, the thick AlGaN layer of growth 90nm, and the doping of Al is 75%; TMGa flow is 20sccm, and the speed of growth is 0.3 μ m/h, thick the 2nd AlGaN layer of growth 120nm, and the doping of Al is 55%; TMGa flow is 65sccm, the speed of growth 0.5 μ m/h, and thick the 3rd AlGaN layer of growth 200nm, the doping of Al is 20%.
(4) adopt the metal organic chemical vapor deposition technique thick u-GaN layer of 1 μ m of growing, process conditions are: underlayer temperature is 1000 ℃, and chamber pressure is 150Torr, and V/III ratio is 3000, and the speed of growth is 3.5 μ m/h.
(5) adopt the metal organic chemical vapor deposition technique thick n-GaN layer of 2 μ m of growing, process conditions are: underlayer temperature is 1000 ℃, and chamber pressure is 150Torr, and V/III ratio is 2000, and the speed of growth is 2.0 μ m/h.
(6) adopt the thick InGaN/GaN quantum well layer of metal organic chemical vapor deposition technique growth 200nm, process conditions are: underlayer temperature is 1000 ℃, and chamber pressure is 150Torr, and V/III ratio is 2500, and the speed of growth is 0.4 μ m/h.
(7) adopt the thick p-GaN layer of metal organic chemical vapor deposition technique growth 200nm, process conditions are: underlayer temperature is 1000 ℃, and chamber pressure is 150Torr, and V/III ratio is 3000, and the speed of growth is 0.4 μ m/h.
(8) cavity makes: adopt metal organic chemical vapor deposition technique on p-GaN layer, to deposit the SiO of 2 μ m
2mask layer, utilizes diode pumped solid state laser from SiO
2the passage that leads to substrate is got on mask layer surface, uses H subsequently at 200 ℃
3pO
4and H
2sO
4mixed liquor along passage, corrode, to obtain height h be 20nm in the top of each hemisphere figure projection cavity, uses plasma etching method by SiO afterwards
2mask layer is removed.
Please refer to Fig. 3, from X ray backswing allusion quotation line chart, can see, the half-peak breadth (FWHM) of GaN in LED epitaxial wafer (002) value is 392arcsec, shows that on Si (111) face epitaxial growth has gone out the high-quality LED epitaxial wafer of fabricating low-defect-density.
The emission wavelength that prepared by the present embodiment is grown in the PL spectrum that the LED epitaxial wafer in Si graph substrate at room temperature records is 455nm, and half-peak breadth is 19nm, has shown extraordinary optical property.
Embodiment 2:
The feature of the present embodiment is:
LED epitaxial wafer in the described Si of being grown in graph substrate is adopted with the following method and is obtained:
(1) substrate with and the choosing of crystal orientation: adopt Si graph substrate, choose (111) face.
(2) adopt the thick AlN resilient coating of metal organic chemical vapor deposition technique growth 20nm, process conditions are: underlayer temperature is 960 ℃, and chamber pressure is 100Torr, and V/III ratio is 3500, and the speed of growth is 0.3 μ m/h.
(3) adopt metal organic chemical vapor deposition technique growth AlGaN stepping resilient coating, process conditions are: keeping substrate is 1060 ℃, and chamber pressure is 100Torr, NH
3flow is 15slm, and TMAl flow is under 250sccm condition, and TMGa flow is 8sccm, and the speed of growth is 0.2 μ m/h, the thick AlGaN layer of growth 110nm, and the doping of Al is 80%; TMGa flow is 25sccm, and the speed of growth is 0.4 μ m/h, thick the 2nd AlGaN layer of growth 160nm, and the doping of Al is 60%; TMGa flow is 70sccm, and the speed of growth is 0.6 μ m/h, thick the 3rd AlGaN layer of growth 240nm, and the doping of Al is 25%.
(4) adopt the metal organic chemical vapor deposition technique thick u-GaN layer of 1 μ m of growing, process conditions are: underlayer temperature is 1060 ℃, and chamber pressure is 220Torr, and V/III ratio is 2800, and the speed of growth is 3.3 μ m/h.
(5) adopt the metal organic chemical vapor deposition technique thick n-GaN layer of 2 μ m of growing, process conditions are: underlayer temperature is 1100 ℃, and chamber pressure is 220Torr, and V/III ratio is 2500, and the speed of growth is 3.0 μ m/h.
(6) adopt the thick InGaN/GaN quantum well layer of metal organic chemical vapor deposition technique growth 200nm, process conditions are: underlayer temperature is 1060 ℃, and chamber pressure is 220Torr, and V/III ratio is 3000, and the speed of growth is 0.5 μ m/h.
(7) adopt the thick p-GaN layer of metal organic chemical vapor deposition technique growth 200nm, process conditions are: underlayer temperature is 1060 ℃, and chamber pressure is 220Torr, and V/III ratio is 3400, and the speed of growth is 0.6 μ m/h.
(8) cavity makes: adopt metal organic chemical vapor deposition technique on p-GaN layer, to deposit the SiO of 2 μ m
2mask layer, utilizes diode pumped solid state laser from SiO
2the passage that leads to substrate is got on mask layer surface, uses H subsequently at 200-250 ℃
3pO
4and H
2sO
4mixed liquor along passage, corrode, to obtain height h be 20nm in the top of each hemisphere figure projection cavity, uses plasma etching method by SiO afterwards
2mask layer is removed.
Please refer to Fig. 4, from X ray backswing allusion quotation line chart, can see, the half-peak breadth (FWHM) of GaN in LED epitaxial wafer (002) value is 385arcsec, shows that on Si (111) face epitaxial growth has gone out the high-quality LED epitaxial wafer of fabricating low-defect-density.
The emission wavelength that prepared by the present embodiment is grown in the PL spectrum that the LED epitaxial wafer in Si graph substrate at room temperature records is 457nm, and half-peak breadth is 19nm, has shown extraordinary optical property.
Embodiment 3:
The present embodiment is to change one's profession on the basis of embodiment 1, and difference is:
Please refer to Fig. 5, in Si graph substrate of the present utility model, be placed with the circular cone that a plurality of shapes are identical, cone height H is 1 μ m, and back gauge d is 1 μ m, and bottom width w is 1.5 μ m; Arrangement mode is that hexagon is arranged.
Employing, before growing AIN resilient coating, is carried out surface clean, annealing in process step successively to substrate, and concrete grammar is as follows:
Surface cleaning processing: Si graph substrate is first placed on to ultrasonic cleaning in acetone soln, and then is placed on deionized water for ultrasonic cleaning; Then ultrasonic cleaning in isopropyl acetone solution; Then ultrasonic cleaning in hydrofluoric acid solution, then soak in deionized water; Again Si graph substrate is placed in the mixed solution of sulfuric acid and hydrogen peroxide and soaks; Finally Si graph substrate is put into hydrofluoric acid and soak, with deionized water rinsing, nitrogen dries up.
Annealing in process: by Si graph substrate high-temperature baking 3-5h at 900-1000 ℃.
Please refer to Fig. 6, from X ray backswing allusion quotation line chart, can see, the half-peak breadth (FWHM) of GaN in LED epitaxial wafer (002) value is 380arcsec, shows that on Si (111) face epitaxial growth has gone out the high-quality LED epitaxial wafer of fabricating low-defect-density.
The emission wavelength that prepared by the present embodiment is grown in the PL spectrum that the LED epitaxial wafer in Si graph substrate at room temperature records is 450nm, and half-peak breadth is 19nm, has shown extraordinary optical property.
For a person skilled in the art, can make other various corresponding changes and distortion according to technical scheme described above and design, and these all changes and distortion all should belong to the protection range of the utility model claim within.
Claims (7)
1. be grown in the LED epitaxial wafer in Si graph substrate, it is characterized in that: it comprises Si graph substrate, the crystal orientation of described Si graph substrate is (111), is distributed with the figure projection that several shapes are identical on it; In described Si graph substrate, growth has AlN resilient coating, AlGaN stepping resilient coating, u-GaN layer, n-GaN layer, InGaN/GaN quantum well layer and p-GaN layer successively; Top in each figure projection is formed with cavity.
2. the LED epitaxial wafer being grown in Si graph substrate according to claim 1, is characterized in that: described AlGaN stepping resilient coating comprises three layers, is from bottom to top followed successively by: an AlGaN layer, the 2nd AlGaN layer and the 3rd AlGaN layer; Wherein, the thickness of an AlGaN layer is 80-150nm; The thickness of the 2nd AlGaN layer is 100-200nm; The thickness of the 3rd AlGaN layer is 200-300nm; In the one AlGaN layer, the 2nd AlGaN layer and the 3rd AlGaN layer, the doping of Al reduces successively.
3. the LED epitaxial wafer being grown in Si graph substrate according to claim 1, is characterized in that: the arrangement mode of described figure projection is that rectanglar arrangement or hexagon are arranged.
4. the LED epitaxial wafer being grown in Si graph substrate according to claim 1, is characterized in that: described figure projection is hemisphere or circular cone, and its height H is 1-1.2 μ m, and back gauge d is 1-3 μ m, and bottom width w is 1.5-3 μ m.
5. the LED epitaxial wafer being grown in Si graph substrate according to claim 1, is characterized in that: described cavity is distributed in the top of figure projection, and cavity height h is 10-100nm.
6. the LED epitaxial wafer being grown in Si graph substrate according to claim 1, is characterized in that: described u-GaN layer thickness is 1-1.5 μ m.
7. the LED epitaxial wafer being grown in Si graph substrate according to claim 1, is characterized in that: the thickness of described AlN resilient coating is 10-100nm.
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| CN201420307767.4U CN203910840U (en) | 2014-06-10 | 2014-06-10 | LED epitaxial wafer grown on Si patterned substrate |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140351A (en) * | 2015-07-03 | 2015-12-09 | 厦门市三安光电科技有限公司 | Light-emitting diode structure and manufacturing method thereof |
| CN105591004A (en) * | 2016-03-29 | 2016-05-18 | 苏州晶湛半导体有限公司 | LED epitaxial wafer based on graphical Si substrate and making method of LED epitaxial wafer |
| CN105789031A (en) * | 2016-03-11 | 2016-07-20 | 中国建筑材料科学研究总院 | Mask for laser direct writing and etching method of mask |
| CN104037293B (en) * | 2014-06-10 | 2017-02-01 | 广州市众拓光电科技有限公司 | Light-emitting diode (LED) epitaxial wafer growing on Si patterned substrate and preparation process of LED epitaxial wafer |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN111146320A (en) * | 2018-11-02 | 2020-05-12 | 华为技术有限公司 | Silicon-based substrate, substrate base plate and manufacturing method thereof, and photoelectric device |
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2014
- 2014-06-10 CN CN201420307767.4U patent/CN203910840U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104037293B (en) * | 2014-06-10 | 2017-02-01 | 广州市众拓光电科技有限公司 | Light-emitting diode (LED) epitaxial wafer growing on Si patterned substrate and preparation process of LED epitaxial wafer |
| CN105140351A (en) * | 2015-07-03 | 2015-12-09 | 厦门市三安光电科技有限公司 | Light-emitting diode structure and manufacturing method thereof |
| CN105140351B (en) * | 2015-07-03 | 2017-11-17 | 厦门市三安光电科技有限公司 | Light emitting diode construction and preparation method thereof |
| CN105789031A (en) * | 2016-03-11 | 2016-07-20 | 中国建筑材料科学研究总院 | Mask for laser direct writing and etching method of mask |
| CN105591004A (en) * | 2016-03-29 | 2016-05-18 | 苏州晶湛半导体有限公司 | LED epitaxial wafer based on graphical Si substrate and making method of LED epitaxial wafer |
| CN105591004B (en) * | 2016-03-29 | 2020-07-10 | 苏州晶湛半导体有限公司 | L ED epitaxial wafer based on patterned Si substrate and preparation method thereof |
| US10964843B2 (en) | 2016-03-29 | 2021-03-30 | Enkris Semiconductor, Inc | Patterned Si substrate-based LED epitaxial wafer and preparation method therefor |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN111146320A (en) * | 2018-11-02 | 2020-05-12 | 华为技术有限公司 | Silicon-based substrate, substrate base plate and manufacturing method thereof, and photoelectric device |
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