CN104779211B - 直接键合的晶格失配的半导体器件 - Google Patents

直接键合的晶格失配的半导体器件 Download PDF

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Publication number
CN104779211B
CN104779211B CN201410741083.XA CN201410741083A CN104779211B CN 104779211 B CN104779211 B CN 104779211B CN 201410741083 A CN201410741083 A CN 201410741083A CN 104779211 B CN104779211 B CN 104779211B
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layer
substrate
semiconductor
bonded
chip
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Chinese (zh)
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CN104779211A (zh
Inventor
D·C·劳
R·R·金
D·D·克鲁特
D·波胡萨利
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201410741083.XA 2014-01-10 2014-12-08 直接键合的晶格失配的半导体器件 Active CN104779211B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/152,464 2014-01-10
US14/152,464 US9331227B2 (en) 2014-01-10 2014-01-10 Directly bonded, lattice-mismatched semiconductor device

Publications (2)

Publication Number Publication Date
CN104779211A CN104779211A (zh) 2015-07-15
CN104779211B true CN104779211B (zh) 2018-12-28

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Country Status (4)

Country Link
US (1) US9331227B2 (https=)
EP (1) EP2894661B1 (https=)
JP (1) JP6434313B2 (https=)
CN (1) CN104779211B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3047351B1 (fr) 2016-02-03 2023-07-14 Soitec Silicon On Insulator Substrat avance
AU2017391778B2 (en) * 2017-01-04 2022-09-29 Shih-Hsien Tseng Pixel unit structure and manufacturing method thereof
KR20190044235A (ko) 2017-10-20 2019-04-30 한국전력공사 격자 부정합 완충 구조를 갖는 다중 접합 태양전지 및 이의 제조 방법
CN111653649B (zh) * 2020-06-05 2023-09-05 中国科学院上海微系统与信息技术研究所 一种Si基InGaAs光电探测器的制备方法及光电探测器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020052061A1 (en) * 2000-08-04 2002-05-02 Fitzgerald Eugene A. Silicon wafer with embedded optoelectronic material for monolithic OEIC
US20100116327A1 (en) * 2008-11-10 2010-05-13 Emcore Corporation Four junction inverted metamorphic multijunction solar cell

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JP2705283B2 (ja) * 1990-06-14 1998-01-28 日立電線株式会社 積層型太陽電池及びその製造方法
US6746777B1 (en) 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
US7157119B2 (en) * 2002-06-25 2007-01-02 Ppg Industries Ohio, Inc. Method and compositions for applying multiple overlying organic pigmented decorations on ceramic substrates
WO2004054003A1 (en) * 2002-12-05 2004-06-24 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US20050067377A1 (en) 2003-09-25 2005-03-31 Ryan Lei Germanium-on-insulator fabrication utilizing wafer bonding
JP2005159071A (ja) * 2003-11-27 2005-06-16 Ricoh Co Ltd 半導体デバイスおよびその製造方法および光伝送システム
US8227689B2 (en) * 2004-06-15 2012-07-24 The Boeing Company Solar cells having a transparent composition-graded buffer layer
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US11211510B2 (en) * 2005-12-13 2021-12-28 The Boeing Company Multijunction solar cell with bonded transparent conductive interlayer
US20110132445A1 (en) * 2009-05-29 2011-06-09 Pitera Arthur J High-efficiency multi-junction solar cell structures
US8822817B2 (en) 2010-12-03 2014-09-02 The Boeing Company Direct wafer bonding
US10170652B2 (en) * 2011-03-22 2019-01-01 The Boeing Company Metamorphic solar cell having improved current generation
US20140137930A1 (en) * 2012-11-16 2014-05-22 Solar Junction Corporation Multijunction solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020052061A1 (en) * 2000-08-04 2002-05-02 Fitzgerald Eugene A. Silicon wafer with embedded optoelectronic material for monolithic OEIC
US20100116327A1 (en) * 2008-11-10 2010-05-13 Emcore Corporation Four junction inverted metamorphic multijunction solar cell

Also Published As

Publication number Publication date
EP2894661A1 (en) 2015-07-15
US9331227B2 (en) 2016-05-03
JP2015156478A (ja) 2015-08-27
EP2894661B1 (en) 2022-09-07
US20150200321A1 (en) 2015-07-16
CN104779211A (zh) 2015-07-15
JP6434313B2 (ja) 2018-12-05

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