JP2015156478A - 直接に接着される格子不整合半導体デバイス - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 170
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000010410 layer Substances 0.000 claims description 161
- 239000012790 adhesive layer Substances 0.000 claims description 125
- 238000000034 method Methods 0.000 claims description 48
- 239000002019 doping agent Substances 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 82
- 239000000853 adhesive Substances 0.000 description 36
- 230000001070 adhesive effect Effects 0.000 description 36
- 239000000463 material Substances 0.000 description 24
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
Description
102 第1のサブアセンブリ
104 第2のサブアセンブリ
110 第1のウエハ
110a 第1の表面
120 第1の接着層
120a 第1の接着表面
130 第2のウエハ
130a 第2の表面
134 Geサブセル
140 第2の接着層
140a 第2の接着表面
150 接着インターフェース
200 半導体デバイス
300 方法
302 ブロック
304 ブロック
306 ブロック
400 構造体
402 第1のサブアセンブリ
404 第2のサブアセンブリ
410 第1のウエハ
410a 第1の表面
412 半導体の層
412a 半導体の表面
420 第1の接着層
420a 第1の接着表面
430 第2のウエハ
430a 第2の表面
432 緩衝層
432a 緩衝表面
434 Geサブセル
436 半導体の層
436a 半導体の表面
440 第2の接着層
440a 第2の接着表面
450 インターフェース
500 半導体デバイス
600 方法
602 ブロック
604 ブロック
606 ブロック
608 ブロック
610 ブロック
700 構造体
702 第1のサブアセンブリ
704 第2のサブアセンブリ
710 第1のウエハ
710a 第1の表面
712 第1の半導体の層
712a 第1の半導体の表面
714 緩衝層
714a 緩衝表面
716 第2の半導体の層
716a 第2の半導体の表面
720 第1の接着層
720a 第1の接着表面
732 緩衝層
732a 緩衝表面
734 Geサブセル
736 半導体の層
736a 半導体の表面
740 第2の接着層
740a 第2の接着表面
750 接着インターフェース
800 半導体デバイス
900 方法
902 ブロック
904 ブロック
906 ブロック
908 ブロック
910 ブロック
912 ブロック
914 ブロック
916 ブロック
Claims (15)
- 第1の接着層及び第1の基板を備える第1のサブアセンブリ;並びに
第2のサブアセンブリを備え;前記第2のサブアセンブリは:
第2の基板;及び
前記第1の接着層に直接接着される第2の接着層であって、前記第1の接着層及び前記第2の接着層は互いに格子不整合する、第2の接着層を備え、かつ
前記第1の接着層は前記第1の基板に対して格子不整合するか、前記第2の接着層は前記第2の基板に対して格子不整合するうちの少なくとも1つが選択される、半導体デバイス。 - 緩衝層が前記第2の基板上でエピタキシャル成長される、請求項1に記載の半導体デバイス。
- 前記第2の基板はゲルマニウム(Ge)から構築され、かつ随意に、前記第2の基板はアクティブGeサブセルを含む、請求項1に記載の半導体デバイス。
- 前記第2のサブアセンブリは、前記第2の基板に対して格子不整合する半導体の層を含む、請求項1に記載の半導体デバイス。
- 前記第1のサブアセンブリは、前記第1の基板に対して格子整合する第1の半導体の層を含む、請求項1に記載の半導体デバイス。
- 前記第1のサブアセンブリは、前記第1の基板上でエピタキシャル成長される緩衝層を含む、請求項5に記載の半導体デバイス。
- 前記第1のサブアセンブリは、前記第1の基板に対して格子不整合する第2の半導体の層を含む、請求項6に記載の半導体デバイス。
- 前記第2の半導体の層は、前記緩衝層の上でエピタキシャル成長される、請求項5に記載の半導体デバイス。
- 前記第1のサブアセンブリ及び前記第2のサブアセンブリのうちの少なくとも1つは、光起電装置及び太陽電池のうちの1つを含む、請求項1に記載の半導体デバイス。
- 半導体デバイスを作る方法であって:
第1の接着層及び第1の基板を備える第1のサブアセンブリを提供すること;
第2の基板及び第2の接着層を備える第2のサブアセンブリを提供すること;
直接に前記第1の接着層及び前記第2の接着層を一緒に接着することであって、前記第1の接着層及び前記第2の接着層は互いに格子不整合する、接着すること;及び
前記第1の接着層を前記第1の基板に対して格子不整合させるか、前記第2の接着層を前記第2の基板に対して格子不整合させるうちの少なくとも1つを選択することを含む、方法。 - 前記第2の接着層を前記第2の基板に対して格子不整合させることを選択すること、及び前記第2の基板上で緩衝層をエピタキシャル成長させることを含む、請求項10に記載の方法。
- ゲルマニウム(Ge)から前記第2の基板を構築すること、及び随意に、ドーパントを前記第2の基板の層の中に拡散することによって、前記第2の基板の範囲内にアクティブGeサブセルを生成させることを含む、請求項10に記載の方法。
- 前記第1のサブアセンブリの前記第1の基板上で第1の半導体の層をエピタキシャル成長させることを含み、前記第1の半導体の層は前記第1の基板に対して格子整合する、請求項10に記載の方法。
- 前記第1の半導体の層の上で緩衝層をエピタキシャル成長させることを含む、請求項10又は13に記載の方法。
- 前記緩衝層の上で第2の半導体の層をエピタキシャル成長させることを含み、前記第2の半導体の層は前記第1の基板に対して格子不整合し、かつ前記第1の接着層は前記第1の基板に対して格子不整合する、請求項11に記載の方法。
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US14/152,464 | 2014-01-10 | ||
US14/152,464 US9331227B2 (en) | 2014-01-10 | 2014-01-10 | Directly bonded, lattice-mismatched semiconductor device |
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JP2015156478A true JP2015156478A (ja) | 2015-08-27 |
JP2015156478A5 JP2015156478A5 (ja) | 2018-02-22 |
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EP (1) | EP2894661B1 (ja) |
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CN (1) | CN104779211B (ja) |
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JP2020506438A (ja) * | 2017-01-04 | 2020-02-27 | 曾 世憲 | 画素ユニット構造及びその製造方法 |
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FR3047351B1 (fr) | 2016-02-03 | 2023-07-14 | Soitec Silicon On Insulator | Substrat avance |
KR20190044235A (ko) | 2017-10-20 | 2019-04-30 | 한국전력공사 | 격자 부정합 완충 구조를 갖는 다중 접합 태양전지 및 이의 제조 방법 |
CN111653649B (zh) * | 2020-06-05 | 2023-09-05 | 中国科学院上海微系统与信息技术研究所 | 一种Si基InGaAs光电探测器的制备方法及光电探测器 |
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JP2005159071A (ja) * | 2003-11-27 | 2005-06-16 | Ricoh Co Ltd | 半導体デバイスおよびその製造方法および光伝送システム |
US20120240987A1 (en) * | 2011-03-22 | 2012-09-27 | The Boeing Company | Metamorphic solar cell having improved current generation |
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JP2020506438A (ja) * | 2017-01-04 | 2020-02-27 | 曾 世憲 | 画素ユニット構造及びその製造方法 |
JP7032434B2 (ja) | 2017-01-04 | 2022-03-08 | 曾 世憲 | 表示装置 |
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US20150200321A1 (en) | 2015-07-16 |
EP2894661B1 (en) | 2022-09-07 |
JP6434313B2 (ja) | 2018-12-05 |
EP2894661A1 (en) | 2015-07-15 |
US9331227B2 (en) | 2016-05-03 |
CN104779211A (zh) | 2015-07-15 |
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