CN109037399A - 多结太阳能电池装置的制造 - Google Patents

多结太阳能电池装置的制造 Download PDF

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CN109037399A
CN109037399A CN201810879443.0A CN201810879443A CN109037399A CN 109037399 A CN109037399 A CN 109037399A CN 201810879443 A CN201810879443 A CN 201810879443A CN 109037399 A CN109037399 A CN 109037399A
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布鲁诺·吉瑟兰
尚塔尔·艾尔纳
F·迪姆罗特
M·格雷夫
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Soitec SA
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Abstract

本发明涉及用于制造多结太阳能电池装置的方法，该方法包括以下步骤：设置最终基础衬底；设置包括第一拉链层与第一晶种层的第一创制衬底；设置第二衬底；将第一晶种层传送至所述最终基础衬底；在将所述第一晶种层传送至所述最终基础衬底后，在所述第一晶种层上形成至少一个第一太阳能电池层，从而获得第一晶片结构；在所述第二衬底上形成至少一个第二太阳能电池层，从而获得第二晶片结构；并且使所述第一晶片结构与所述第二晶片结构相互结合。

Description

多结太阳能电池装置的制造
本申请是申请日为2013年3月13日、申请号为201380016920.6(国际申请号：PCT/EP2013/055134)、发明名称为“多结太阳能电池装置的制造”的发明专利申请的分案申请。
技术领域
本发明涉及多结太阳能电池衬底的制造，具体地说，涉及包括晶片传送处理的多结太阳能电池衬底的制造以及供地面及太空领域应用的太阳能电池装置的制造。
背景技术
光伏电池或太阳能电池被设计成用于将太阳辐射转化成电流。在太阳能光伏聚光器的应用中，入射太阳光在对准太阳能电池之前被光学地聚集。例如，入射太阳光被主镜接收，该主镜朝副镜反射接收到的辐射，该副镜转而朝太阳能电池反射辐射，该太阳能电池例如通过在III-V族半导体或单晶硅中产生电洞对将聚集的辐射转化成电流。另选的是，可通过使用如菲尼尔透镜一样的透光仪器将阳光聚集在太阳能电池上。
因为不同的半导体材料组分对不同波长的入射太阳光显示最优的吸收性，所以已经提出了包括例如在不同波长范围内显示最优吸收性的三个电池的多结太阳能电池。三个电池结构可包括例如：具有1.8eV间隙值的GalnP顶部电池层、具有1.4eV间隙值的GaAs中间电池层以及具有0.7eV间隙值的Ge底部电池层。大体上，III-V或IV族半导体可用作通过层传送/结合制成的多结电池装置的活跃子电池。多结太阳能电池常通过单层外延生长制成。单层生长过程一般需要：任何形成的层与先前形成的层或基础衬底充分地晶格匹配。然而，由于晶格失配，太阳能电池层在生长衬底上的外延生长仍提出了棘手的问题。例如，因为由于晶体失配，lnP太阳能电池层的晶体及光学特征会受到严重恶化，所以不适合在Ge衬底上外延生长lnP太阳能电池层。此外，在传统使用的传送过程中，中间衬底在传送外延生长层后被丢失。
因此，尽管存在现有的创制过程，但是仍存在对于改善用于多结太阳能电池装置的制造过程的需求。
发明内容
本发明解决上述需求，并因此提供一种用于制造多结太阳能电池装置的方法，该方法包括步骤：
设置最终基础衬底；
设置第二衬底；
将第一晶种层传送至最终基础衬底；
在将第一晶种层传送至最终基础衬底后，在第一晶种层上形成至少一个第一太阳能电池层，从而获得第一晶片结构；
在第二衬底上形成至少一个第二太阳能电池层，从而获得第二晶片结构；并且
将至少一个第二太阳能电池结合至第一晶片结构。
就术语“最终”基础衬底而言，其表示此基础衬底将是最后完全制成的多结太阳能电池的基础衬底。
将至少一个第二太阳能电池结合至第一晶片结构的步骤包括将至少一个第二太阳能电池层结合至至少一个第一太阳能电池层。与现有技术的制造过程相比，可借助相对小数量的传送步骤获得具有堆叠的太阳能电池层的构造，从而减小制造多结太阳能电池的复杂性。
术语“创制衬底”包括不同于仅纯块材衬底的衬底，更确切地说，包括形成在衬底中的层或界面以便利于其局部移除。具体地说，“创制衬底”可包括位于晶种层与基础衬底之间的拉链层。具体地说，创制衬底可包括在移除创制衬底的步骤中从晶种层拆卸的基础衬底。
借助拉链层进行拆卸使得能够重新利用被拆卸的衬底。
在此文献中，“拆卸创制层”的表述应理解为拆卸基础衬底。在此拆卸步骤后，可移除可能残留的拉链层(如果有的话)，并从剩余结构移除晶种层。
拉链层可以是例如通过适当处理(例如氢或氦注入衬底中)形成的弱化层，该弱化层界定了上部晶种层与下部基础衬底的界限。
拉链层可由在基础衬底的表面处通过阳极浸蚀法制成的潜埋多孔层而形成。然后可在多孔层的顶部上进行晶种层的外延生长。
拉链层在外延排序过程中被设置成在中间应变层中用于激光剥离、化学剥离或机械分离的吸收层的形式：SiGe在Si基体中(具体地说，SiGe中间应变层在Si衬底中占20％)过程中。在此替代方案中，拉链层可通过晶种层本身形成，例如选择性地或化学地蚀离晶种层以拆卸创制衬底。
例如由WO2010015878已知的，拉链层也可由插在晶种层和透明基础衬底之间用于激光剥离的SiN吸收层形成。
用于创制衬底的另一种可能标明如下。可移除(呈现小于1.5J/m2的低结合能，优选小于1J/m2)的结合界面形成在晶种层和基础支撑件的相向面之间。在此可能中，通过可移除的结合界面形成拉链层。在创制衬底被加热至外延生长温度的情况下，可通过外延在晶种层上生长第一太阳能电池层，同时保存结合界面可移除的特点。通过用于增大晶种层或衬底之一的相向面的粗糙度的处理(具体地说，通过化学侵蚀或蚀刻进行)以及通过影响用于降低晶种层或衬底(或者晶种层或衬底各自上的SiO2或Si3N4结合层)之一的相向面的亲和性的处理来达到低能结合。而且，可选择用于结合层的不同材料，从而获得界面材料的薄弱的内在化学相互亲和力。可通过应用热处理或例如借助流体喷射或刀片施加的机械应力进行基础衬底的拆卸。这被公开在例如WO03/063214中。
如已经提及的，创制衬底包括形成在拉链层或可移除的结合界面的顶部处的晶种层。晶种层借助从晶片到晶片的层传送(例如通过Smart CutTM过程)被从晶种衬底传送至基础衬底。晶种层可包含或不包含通过在晶种衬底上外延而最初形成的外延层。另选的是，晶种层已被从块材晶种衬底传送或拆卸。在本发明的优选实施方式中，晶种层不用作太阳能电池层，而是在晶种层上生长第一太阳能电池层。
可通过在特定注入层中注入H或He而从InP块材衬底剥离第一晶种层。然后在InP块材衬底结合至最终基础衬底后拆卸部分InP块材衬底，从而在最终基础衬底上仅形成薄的InP层。可在InP层上生长具有高晶体质量与高电气质量的太阳能电池层。例如，可达到小于106/cm2的位错密度。
由钨或钼或如Ge、GaAs或InP的掺杂半导体制成的最终基础衬底可能尤其适于接纳设置在由例如GaAs或GaAsOS(参见下文)制成的第二衬底上的太阳能电池层的堆叠。具体地说，最终基础衬底的CTE与第二衬底的CTE的差异应小于30％，以便避免结合至最终衬底的有关问题。由于CTE的完美匹配，相似的衬底允许较高的结合温度。而且，最终基础衬底必须具有导电性。为了避免金属污染，掺杂半导体(特别是GaAs)的选择会尤其有利。
第二衬底可设置成创制衬底(具体地说，包括蓝宝石基底和GaAs或Ge晶种层)的形式。在结合至形成在最终基础衬底或装卸衬底(如以下将会描述的)上的至少一个第一太阳能电池层后，可在拉链层处拆卸块材蓝宝石。
另选的是，第二衬底可由类似例如GaAs或Ge的大块材料制成，或可包括类似例如GaAs或Ge的大块材料。那么在结合后，可磨制和/或蚀刻第二衬底以获得至少一个第二太阳能电池层的自由主表面。
根据具体的变型，在上述实施例中，至少一个第一太阳能电池层包括两层，即，第一层和(具体地说通过外延生长)形成在第一层上的第二层，并且至少一个第二太阳能电池层也包括两层，即，第三层和(具体地说通过外延生长)形成在第三层上的第四层。
优选的是，在此变型中，该方法还包括步骤：
-将装卸衬底附接至至少第二太阳能电池层处的第二晶片结构；
-移除(具体地说拆卸)第二衬底以获得第三晶片结构；
-将第三晶片结构结合至第一晶片结构。
根据此变型的具体实施例，第一太阳能电池层包括第一层与第二层，并且第二太阳能电池层包括第三层与第四层。在此情况下，第一层(底层)包括GalnAs或由GalnAs组成，并且/或者第二层包括GalnAsP或由GalnAsP组成，并且/或者第四层(制成的多结太阳能电池装置中的顶层)包括GalnP或由GalnP组成，并且/或者所述第三层包括GaAs或由GaAs组成。于是获得了四层多结太阳能电池装置，其中，鉴于入射太阳光的具体波长而优化各层的材料。通过利用中间装卸衬底，在根据此实施方式的整个制造过程中无需层的倒置(即，在具有小带隙的层的顶部上生长具有大带隙的层)。
如已经提及的，至少一个第二太阳能电池层通过直接结合形成在至少一个第一太阳能电池层上。
根据另一变型，第一太阳能电池层包括第一层与第二层，并且第二太阳能电池层包括第四层与第三层。与前述另选实施例相比，第三层与第四层的列举顺序颠倒了。第三层形成在形成于第二衬底上的第四层上。于是，第三层被结合至形成在形成于第一晶种层上的第一层上的第二层。因此，在它们形成在第二衬底上的过程(即，具有小带隙的层在具有宽带隙的层的顶部生长)中需要层(即，第三层与第四层)的倒置，但是集成过程不需要中间装卸衬底。
根据此变型的具体实施例，第一层(底层)包括GalnAs或由GalnAs组成，并且/或者第二层包括GalnAsP或由GalnAsP组成，并且/或者第四层(制成的多结太阳能电池装置中的顶层)包括GalnP或由GalnP组成，并且/或者所述第三层包括GaAs或由GaAs组成(也参见以下的详细描述)。
本发明还提供一种多结太阳能电池装置，该多结太阳能电池由如下部件组成：
由Mo、W、Ge、GaAs或InP制成的最终基础衬底；
晶种层，具体地说，是形成(具体地说结合)在最终基础衬底上的InP晶种层；以及
形成在晶种层上的至少一个第一太阳能电池层与至少一个第二太阳能电池层。
此外，提供这样一种多结太阳能电池装置，可借助用于制造根据本发明的多结太阳能电池装置的方法的上述实施例之一获得该多结太阳能电池装置。
附图说明
将参照附图描述本发明的其它特征及优势。在本描述中，引用以在示例本发明的实施方式的附图。要理解的是，这些实施方式不代表本发明的全部范围。
图1示出了采用太阳能电池层的倒置来制造多结太阳能电池的创新方法的实施例。
图2示出了无需太阳能电池层的倒置来制造多结太阳能电池的创新方法的实施例。
具体实施方式
图1中示出了用于制造包括四个太阳能电池层的多结太阳能电池的创新方法的实施例。设置最终基础衬底1。最终基础衬底1可由Mo、W、Ge、GaAs或InP制成。最终基础衬底1将是完成的多结太阳能电池的基础衬底，并且在加工过程中提供机械稳定性，在操作太阳能电池的过程中优选提供导热性、导电性。设置第一衬底2，该第一衬底包括用于随后拆卸第一衬底2的注入层3(弱化层)。例如，第一衬底2是InP块材衬底。用于形成注入层的注入物可包括H及/或He。
由钨或钼或如Ge、GaAs或InP的掺杂半导体制成的最终基础衬底可能尤其适于接纳设置在由例如GaAs或GaAsOS(参见下文)制成的第二衬底上的太阳能电池层的堆叠。具体地说，最终基础衬底的CTE与第二衬底的CTE的差异应小于30％，以便避免结合至最终衬底的有关问题。由于CTE的完美匹配，相似的衬底允许较高的结合温度。而且，最终基础衬底必须具有导电性。为了避免金属污染，掺杂半导体(特别是GaAs)的选择会尤其有利。
将第一衬底2结合至最终基础衬底1。如本领域中公知的，结合后借助注入层3拆卸第一衬底2的主要部分。例如，可采用Smart Cut TM处理。拆卸的InP块材可被重新利用。由此形成在最终基础衬底1上的InP层3’的厚度可在50nm至1μm的范围内。可通过磨光、蚀刻等制备InP层3’的自由(上部的)表面。
另选的是，晶种层可通过使第一衬底结合在最终基础衬底上并且例如通过磨制、蚀刻减小第一衬底的厚度而形成在最终基础衬底上。
而且，设置包括蓝宝石基底4、拉链层5及GaAs或Ge(晶种)层6的创制衬底。热膨胀系数对于外延过程中的温度变化(上下)及对于进一步加工(尤其是结合步骤(参见下文))而言是重要的，鉴于蓝宝石的热膨胀系数，可优先选择蓝宝石。而且，蓝宝石可透射激光，因此可允许激光处理步骤(参见下文)中的激光剥离。拉链层5可被设置成用于激光剥离的吸收层的形式。
其后，第一太阳能电池层7与第二太阳能电池层8形成在InP层3’的自由表面上，从而产生第一晶片结构A。相似地，第四太阳能电池层10与第三太阳能电池层9形成在创制衬底的GaAs或Ge层6上，从而产生第二晶片结构B。
四个太阳能电池层7至10对不同波长的入射太阳光显示出最大的吸收值。在完成的多结太阳能电池装置中，第一太阳能电池层7成为底部电池，第四太阳能电池层10成为顶部电池。根据本实施例，借助外延生长形成所有这四个单晶太阳能电池层7至10。一般而言，可从由InGaAs、GaAS、AlGaAs、InGaP、InP以及InGaAsP组成的III-V族半导体选择太阳能电池层的材料。例如，第一太阳能电池层7可由InGaAs组成，第二太阳能电池层8可由InGaP、InGaAsP或InP组成，第三太阳能电池层9可由GaAsP或GaAs组成，并且第四太阳能电池层10可由InGaP或InAIAs组成。可通过在相应的太阳能电池层上沉积或附生而在太阳能电池层中的特定层之间设置合适的隧道结层。
在图1中所示的下个步骤中，第一晶片结构A与第二晶片结构B相互结合。在构成根据本发明的优选实施方式的直接结合的情况下，可将待结合的太阳能电池层的表面磨光以便使该表面在5×5微米的范围上平滑至0.5nmRMS以上，例如以获得太阳能电池层之间的提高的结合强度并且获得后续太阳能电池的改善的效能及可靠性。另选的是，可使用导电的光学透明材料作为结合层，从而帮助两个结构的粘合。无论如何，结合界面是在第二太阳能电池层8与第三太阳能电池层9之间。然后借助拉链层5拆卸第二创制衬底的蓝宝石基底4，并且例如通过蚀刻移除GaAs或Ge层6，从而产生第四太阳能电池层10的自由的上部主表面。借助拉链层的拆卸使得能够重新利用拆卸的蓝宝石基底4。
应注意，在使第一晶片结构A与第二晶片结构B相互结合的步骤中会涉及相当高的温度。可在大约400摄氏度至600摄氏度(更优选在450摄氏度与550摄氏度之间)的相当高的温度下进行接触及结合。优选的是，在室温下进行接触步骤，随之进行达到400摄氏度与600摄氏度之间的最高温度的热处理步骤，但是不排除在较高的温度下进行接触步骤。此结合步骤对于生成的多结太阳能电池的质量是关键性的，并且有利于进行高温结合退火以便在第二衬底的下表面与第二太阳能电池层5之间获得高质量而没有明显缺陷的结合界面。
可根据结合过程中涉及的多种材料的热膨胀系数来选择用于最终基础衬底1的材料。就此而言，尤其在创制衬底包括蓝宝石基底的情况下可优先选用Mo。
由钨或钼或如Ge、GaAs或InP的掺杂半导体制成的最终基础衬底可尤其适于接纳设置在由例如GaAs或GaAsOS(参见下文)制成的第二衬底上的太阳能电池层的堆叠。具体地说，最终基础衬底的CTE与第二衬底的CTE的差异应小于30％，以便避免结合至最终衬底的有关问题。
生成的结构经受包括形成多个台面的若干精加工过程，这些台面包括蚀刻的太阳能电池层7’，8’，9’和10’。可在适当图形化的光致抗蚀剂及可选地形成的抗反射涂层形成后通过光刻形成台面。。在图形化的第四太阳能电池层10’上形成电触头11。
应注意，可使用GaAs或Ge块材衬底替代创制衬底作为第二衬底。然后在结合第一晶片结构A后通过蚀刻/磨制移除第二衬底。
图2示出了用于本文公开的方法的另一实施例。根据图1中所示的实施例，需要倒置第二衬底上的第三太阳能电池层9与第四太阳能电池层10。与之相反，在图2中所示的实施例中，在制造过程中不包括此倒置。
与图1的实施例中一样设置最终基础衬底1。最终基础衬底1可由Mo、W、Ge、GaAs或InP制成。设置第一衬底2，该第一衬底包括用于随后拆卸第一衬底2的注入层3(弱化层)。例如，第一衬底2是包括弱化层3的InP块材衬底。将第二衬底4’设置成GaAs或Ge块材衬底的形式。如图1中所示的实施例中所述的，将薄的InP3’从第一衬底2传送至最终基础衬底1。而且，第一太阳能电池层7与第二太阳能电池层8形成在InP层3’上，从而产生第一晶片结构A。相似地，第四太阳能电池层10与第三太阳能电池层9形成在GaAs或Ge块材衬底4’。对于第一太阳能电池层7至第四太阳能电池层10而言，可选择与图1中所示实施例中的材料相同的材料。
然后，借助粘合层将装卸衬底H附接至第四太阳能电池层。装卸衬底可以是玻璃衬底，粘合层可以是胶粘层。然后可移除第二衬底4’从而形成结构C。在此情况下，第二衬底是可被拆卸的创制衬底。
第一晶片结构A与第二晶片结构C的结合产生了在图2的上排右手侧上示出的构造。可按照先前实施例中所述的方法进行接触及结合。结合后，移除装卸晶片H。
生成的结构经受包括形成多个台面的若干精加工，这些台面包括蚀刻的太阳能电池层9’与10’。可在适当图形化的光致抗蚀剂及可选地形成的抗反射涂层形成后通过光刻形成台面。在图形化的第四太阳能电池层10’上形成电触头11。
在先论述的所有实施方式并非意在作为限制因素，而是作为示出本发明的特征及优势的实施例。必须理解，也可以以多种方式组合以上描述的若干或全部特征。具体地说，根据本发明不仅可形成由4结(如先前实施方式中大致公开的一样)而是可由2、3、5或更多结组成的多结太阳能电池。

Claims (8)

1.一种用于制造多结太阳能电池装置的方法，该方法包括以下步骤：
设置由由GaAs构成的最终基础衬底；
设置第二衬底；
将由lnP构成的第一晶种层传送至所述最终基础衬底；
在将所述第一晶种层传送至所述最终基础衬底后，在所述第一晶种层上形成至少一个第一太阳能电池层，从而获得第一晶片结构；在所述第二衬底上形成至少一个第二太阳能电池层，从而获得第二晶片结构；并且
将所述第二晶片结构结合至所述第一晶片结构；
其中，将所述第一晶片结构与所述第二晶片结构相互结合的步骤包括：
使得所述至少一个第二太阳能电池层接触所述至少一个第一太阳能电池层；以及
在400摄氏度至600摄氏度的温度下对所述至少一个第二太阳能电池层和所述至少一个第一太阳能电池层进行退火；
其中，所述第二衬底和所述最终基础衬底均由GaAs构成；
所述至少一个第一太阳能电池层包括由GalnAs构成的第一层和位于所述第一层上的由GalnAsP构成的第二层；
所述至少一个第二太阳能电池层包括由GalnP构成的第四层和位于所述第四层上的由GaAs构成的第三层；
其中，将所述第一晶种层传送至所述最终基础衬底的步骤包括如下步骤：将第一衬底结合至所述最终基础衬底，并且在注入层处拆卸所述第一衬底的一部分。
2.根据权利要求1所述的方法，该方法还包括：在所述第二衬底上形成第二晶种层，并且随后在所述第二晶种层上形成所述至少一个第二太阳能电池层。
3.根据权利要求1所述的方法，该方法还包括将所述第二晶片结构结合至装卸衬底、移除所述第二衬底，并且其中，将所述第二晶片结构结合至所述第一晶片结构的步骤包括将所述装卸衬底结合至所述至少一个太阳能电池层上，在所述装卸衬底上形成有所述至少一个第二太阳能电池层。
4.根据权利要求1所述的方法，其中，所述第二衬底是块材衬底或创制衬底。
5.根据权利要求4所述的方法，该方法还包括在所述第一晶片结构与所述第二晶片结构相互结合后拆卸所述第二创制衬底的所述蓝宝石基底。
6.根据权利要求1所述的方法，该方法还包括：
形成所述至少一个第一太阳能电池层与所述至少一个第二太阳能电池层的台面；并且
在所述至少一个第二太阳能电池层的自由主表面上形成触头。
7.根据权利要求5所述的方法，其中，所述创制衬底包括拉链层、蓝宝石基底以及GaAs晶种层，在所述GaAs晶种层上将形成所述至少一个第二太阳能电池层。
8.一种能够通过根据前述权利要求在任一项所述的方法获得的多结太阳能电池装置。
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