JP2020506438A - 画素ユニット構造及びその製造方法 - Google Patents
画素ユニット構造及びその製造方法 Download PDFInfo
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
Description
2 表示装置
13 能動スイッチング素子
133 ウエハ部
135 トランジスタ部
137 電極
15 表示媒体モジュール
151 第1電極
153 第2電極
155 表示媒体
157A 第1基板
157B 第2基板
159A 貫通孔
159B 凹溝
17 制御信号線
19 データ信号線
21、21’ 機能素子
23 パッケージキャリア
25、25’ 光学素子
27 キャリアボード
271 凹溝
31 外殻構造
33 光源モジュール
35 制御モジュール
100 自動車
101 車両後部ライト
102 曲面外殻
200 交通掲示板
300 道路警報器
100A、200A、300A イメージ
Claims (20)
- 第1電極、第2電極及び表示媒体を含み、該第1電極及び該第2電極は、互いに仕切られ、該表示媒体は、該第1電極及び該第2電極の間に設置される表示媒体モジュールと、
該第1電極に電気接続され、該第1電極及び該第2電極に該表示媒体の状態を変化させることに用いられる能動スイッチング素子と、
を含み、該能動スイッチング素子は、ウエハ部とトランジスタ部を含み、該トランジスタ部は、該ウエハ部上に形成される画素ユニット構造。 - 前記表示モジュールは、更に、第1基板及び第2基板を含み、該第1基板及び該第2基板は、互いに対をなして互いに仕切られ、
該第1電極は、該第1基板上に設置され、該第2電極は、該第1基板又は該第2基板上に設置され、
該能動スイッチング素子は、該第1基板及び/又は該第2基板に取り付けられる請求項1に記載の画素ユニット構造。 - 該第1基板又は該第2基板は、光透過材料、非光透過材料、可撓性材料、剛性材料、金属材料、セラミック材料、絶縁材料、金属化合物、金属合金、有機材料、無機材料、複合材料及び半導体材料の少なくとも1つにより製作される請求項2に記載の画素ユニット構造。
- パッケージキャリアを更に含み、該能動スイッチング素子は、該パッケージキャリア中にパッケージングされる請求項1に記載の画素ユニット構造。
- 機能素子を更に含み、該機能素子は、該パッケージキャリア中にパッケージングされ、該機能素子は、変位センシング素子、温度湿度センシング機能素子、音波センシング機能素子、電磁波センシング機能素子、タッチセンシング機能素子、イメージ取得機能素子、メモリ機能素子、制御機能素子、無線通信機能素子、受動機能素子、自発光機能素子及び太陽光発電機能素子の何れか1つを含む請求項4に記載の画素ユニット構造。
- 更に、機能素子を含み、該機能素子は、該第1基板及び/又は該第2基板に取り付けられ、該機能素子は、変位センシング機能素子、温度湿度センシング機能素子、音波センシング機能素子、電磁波センシング機能素子、タッチセンシング機能素子、イメージ取得機能素子、メモリ機能素子、制御機能素子、無線通信機能素子、受動機能素子、自発光機能素子及び太陽光発電機能素子の何れか1つを含む請求項3又は4に記載の画素ユニット構造。
- 前記第1基板及び/又は該第2基板は、凹溝又は貫通孔を含み、該能動スイッチング素子は、該凹溝又は該貫通孔中に取り付けられる請求項2に記載の画素ユニット構造。
- 更に、キャリアボードを含み、該表示媒体モジュールは、該キャリアボードに設置され、該能動スイッチング素子は、該キャリアボード上に取り付けられる請求項1に記載の画素ユニット構造。
- 前記キャリアボードは、凹溝又は貫通孔を含み、該能動スイッチング素子は、該凹溝又は該貫通孔中に取り付けられる請求項8に記載の画素ユニット構造。
- 更に、信号線及びデータ信号線を含み、前記制御信号線及び該データ信号線は、該キャリアボード上に形成され、該能動スイッチング素子に電気接続される請求項8に記載の画素ユニット構造。
- 更に、制御信号線及びデータ信号線を含み、該制御信号線及び該データ信号線は、該表示媒体モジュールの該第1基板及び/又は該第2基板上に形成され、能動スイッチング素子に電気接続される請求項2に記載の画素ユニット構造。
- 前記表示媒体モジュールは、更に、光学素子を含み、該表示媒体と互いに光学的に結合し、該光学素子は、凸レンズ、凹レンズ及び光学プリズムの少なくとも1つを含む請求項1に記載の画素ユニット構造。
- 前記表示媒体は、自発光媒体材料、非自発光媒体材料、光学フィルタリング材料、導電材料、絶縁材料、光吸収材料、光反射材料、偏光材料及び光拡散材料の少なくとも1つを含む請求項1に記載の画素ユニット構造。
- 前記非自発光媒体材料は、電気泳動式、電動流体、液晶、微小電気機械反射体、エレクトロウェッティング、電子インク、磁性流体、エレクトロクロミック、電気的相変化、熱誘起変色のうちの少なくとも1つを含み、該自発光媒体材料は、エレクトロルミネセント材料、フォトルミネッセンス材料、陰極発光材料、電界放出発光物質、真空蛍光材料、発光ダイオードのうち少なくとも1つを含む請求項13に記載の画素ユニット構造。
- 少なくとも1つの請求項1に記載の画素ユニット構造及び外殻構造を含み、該画素ユニット構造が該外殻構造中に設置される表示装置。
- 光源モジュールを更に含み、該光源モジュールは、該外殻構造中に設置され、該画素ユニット構造の該表示媒体モジュールの一側に位置する請求項15に記載の表示装置。
- 能動スイッチング素子を先に製造することと、
該能動スイッチング素子を表示媒体モジュールに組み付けることと、
を含み、
該表示媒体モジュールは、第1電極、第2電極及び表示媒体を含み、該第1電極及び該第2電極は、互いに仕切られ、該表示媒体は、該第1電極及び該第2電極の間に設置され、該能動スイッチング素子は、ウエハ部及びトランジスタ部を含み、該トランジスタ部は、該ウエハ部上に形成され、
該能動スイッチング素子は、該第1電極に電気接続し、該第1電極及び該第2電極に該表示媒体の状態を変化させることに用いられる画素ユニット構造の製造方法。 - 前記能動スイッチング素子は、ウエハ上に半導体プロセスによって製造される請求項17に記載の画素ユニット構造の製造方法。
- 前記能動スイッチング素子は、パッケージキャリアにパッケージングされた後、該表示媒体モジュールに組み付けられる請求項18に記載の画素ユニット構造の製造方法。
- 更に、機能素子及び該能動スイッチング素子を共に該パッケージキャリアにパッケージングすることを含む請求項19に記載の画素ユニット構造の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2017/070146 WO2018126358A1 (zh) | 2017-01-04 | 2017-01-04 | 像素单元结构及其制造方法 |
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JP2020506438A true JP2020506438A (ja) | 2020-02-27 |
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TW202133133A (zh) * | 2019-12-17 | 2021-09-01 | 曾世憲 | 顯示裝置,畫素陣列及其製造方法 |
CN113126373B (zh) * | 2020-01-10 | 2022-10-11 | 中国科学院上海光学精密机械研究所 | 反射式光寻址液晶空间光调制器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242513A (ja) * | 1996-07-29 | 1998-09-11 | Nichia Chem Ind Ltd | 発光ダイオード及びそれを用いた表示装置 |
JP2001007340A (ja) * | 1999-06-25 | 2001-01-12 | Toshiba Corp | アクティブマトリクス基板及びその製造方法、素子形成基板、中間転写基板 |
JP2003005212A (ja) * | 2001-06-20 | 2003-01-08 | Seiko Instruments Inc | 単結晶シリコントランジスタ素子を有する液晶表示装置およびその製造方法 |
US6696325B1 (en) * | 2003-02-27 | 2004-02-24 | Toppoly Optoelectronics Corp. | Method of transferring a thin film device onto a plastic sheet and method of forming a flexible liquid crystal display |
JP2004096018A (ja) * | 2002-09-03 | 2004-03-25 | Seiko Epson Corp | 回路基板の製造方法、電気光学装置、及び電子機器 |
US20080064129A1 (en) * | 2006-09-12 | 2008-03-13 | Nam-Seok Roh | Method of Manufacturing a Display Substrate |
JP2014067008A (ja) * | 2012-09-24 | 2014-04-17 | Beijing Boe Optoelectronics Technology Co Ltd | アレイ基板、表示パネル及びその製造方法 |
JP2015156478A (ja) * | 2014-01-10 | 2015-08-27 | ザ・ボーイング・カンパニーTheBoeing Company | 直接に接着される格子不整合半導体デバイス |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5491571A (en) * | 1993-01-19 | 1996-02-13 | Hughes Aircraft Company | Liquid crystal display including electrodes and driver devices integrally formed in monocrystalline semiconductor layer |
TW479151B (en) * | 1996-10-16 | 2002-03-11 | Seiko Epson Corp | Substrate for liquid crystal device, the liquid crystal device and projection-type display |
KR20010022036A (ko) * | 1997-08-21 | 2001-03-15 | 하루타 히로시 | 반도체장치 및 그 제조방법 |
JP2001217245A (ja) * | 2000-02-04 | 2001-08-10 | Sharp Corp | 電子部品およびその製造方法 |
CN1192337C (zh) * | 2000-03-16 | 2005-03-09 | 葛世潮 | 大屏幕有源显示装置 |
JP3668407B2 (ja) * | 2000-03-24 | 2005-07-06 | シャープ株式会社 | 平面機能デバイスおよびその製造方法 |
US6693384B1 (en) * | 2002-02-01 | 2004-02-17 | Alien Technology Corporation | Interconnect structure for electronic devices |
CN2650277Y (zh) * | 2003-10-09 | 2004-10-20 | 阮宝崧 | 拼装式等离子体显示器件 |
TWI231606B (en) * | 2003-11-10 | 2005-04-21 | Shih-Hsien Tseng | Image pickup device and a manufacturing method thereof |
TWI324703B (en) * | 2005-02-01 | 2010-05-11 | Shih Hsien Tseng | Modulized display device and fabrication method thereof |
KR101187207B1 (ko) * | 2005-08-04 | 2012-10-02 | 삼성디스플레이 주식회사 | 디스플레이장치 |
JP5132572B2 (ja) * | 2005-11-14 | 2013-01-30 | キリュスシェフ、イリナ | フラット・パネル・ディスプレイ装置 |
KR100777265B1 (ko) * | 2006-03-30 | 2007-11-20 | 고려대학교 산학협력단 | 나노 입자를 이용한 전면 게이트 박막 트랜지스터 및 그제조 방법 |
CN101122693A (zh) * | 2006-08-07 | 2008-02-13 | 启萌科技有限公司 | 平面显示面板及平面显示装置 |
CN101122691A (zh) * | 2006-08-09 | 2008-02-13 | 上海晨兴电子科技有限公司 | 改善副屏阴影的方法 |
WO2009089105A1 (en) * | 2008-01-04 | 2009-07-16 | Nanolumens | Flexible display |
US8183765B2 (en) * | 2009-08-24 | 2012-05-22 | Global Oled Technology Llc | Controlling an electronic device using chiplets |
CN102956500A (zh) * | 2011-08-23 | 2013-03-06 | 广东中显科技有限公司 | 多晶硅薄膜晶体管的制备方法 |
CN103220606B (zh) * | 2012-01-20 | 2015-10-21 | 中华大学 | 电声转换器及其制造方法 |
-
2017
- 2017-01-04 JP JP2019556395A patent/JP7032434B2/ja active Active
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- 2017-01-04 AU AU2017391778A patent/AU2017391778B2/en active Active
- 2017-11-08 WO PCT/CN2017/109972 patent/WO2018126786A1/zh active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242513A (ja) * | 1996-07-29 | 1998-09-11 | Nichia Chem Ind Ltd | 発光ダイオード及びそれを用いた表示装置 |
JP2001007340A (ja) * | 1999-06-25 | 2001-01-12 | Toshiba Corp | アクティブマトリクス基板及びその製造方法、素子形成基板、中間転写基板 |
JP2003005212A (ja) * | 2001-06-20 | 2003-01-08 | Seiko Instruments Inc | 単結晶シリコントランジスタ素子を有する液晶表示装置およびその製造方法 |
JP2004096018A (ja) * | 2002-09-03 | 2004-03-25 | Seiko Epson Corp | 回路基板の製造方法、電気光学装置、及び電子機器 |
US6696325B1 (en) * | 2003-02-27 | 2004-02-24 | Toppoly Optoelectronics Corp. | Method of transferring a thin film device onto a plastic sheet and method of forming a flexible liquid crystal display |
US20080064129A1 (en) * | 2006-09-12 | 2008-03-13 | Nam-Seok Roh | Method of Manufacturing a Display Substrate |
JP2014067008A (ja) * | 2012-09-24 | 2014-04-17 | Beijing Boe Optoelectronics Technology Co Ltd | アレイ基板、表示パネル及びその製造方法 |
JP2015156478A (ja) * | 2014-01-10 | 2015-08-27 | ザ・ボーイング・カンパニーTheBoeing Company | 直接に接着される格子不整合半導体デバイス |
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JP7032434B2 (ja) | 2022-03-08 |
SG11201906168XA (en) | 2019-08-27 |
CN108604032A (zh) | 2018-09-28 |
CA3049152A1 (en) | 2018-07-12 |
AU2017391778A1 (en) | 2019-08-15 |
KR102623233B1 (ko) | 2024-01-09 |
EP3564741A4 (en) | 2020-06-17 |
RU2747443C2 (ru) | 2021-05-05 |
AU2017391778B2 (en) | 2022-09-29 |
RU2019123607A3 (ja) | 2021-02-05 |
EP3564741A1 (en) | 2019-11-06 |
WO2018126786A1 (zh) | 2018-07-12 |
RU2019123607A (ru) | 2021-02-05 |
WO2018126358A1 (zh) | 2018-07-12 |
CA3049152C (en) | 2024-04-02 |
EP3564741B1 (en) | 2023-11-22 |
KR20190099046A (ko) | 2019-08-23 |
EP3564741C0 (en) | 2023-11-22 |
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