TWI324703B - Modulized display device and fabrication method thereof - Google Patents
Modulized display device and fabrication method thereof Download PDFInfo
- Publication number
- TWI324703B TWI324703B TW94103132A TW94103132A TWI324703B TW I324703 B TWI324703 B TW I324703B TW 94103132 A TW94103132 A TW 94103132A TW 94103132 A TW94103132 A TW 94103132A TW I324703 B TWI324703 B TW I324703B
- Authority
- TW
- Taiwan
- Prior art keywords
- pixel
- electrode
- module
- conductive
- display device
- Prior art date
Links
Description
以4703 九、發明說明： 【發明所屬之技術領域】 模組 本發明係有關於一種顯示裝置及其製作方法， =示襄置及其製作方法，其主要構造係包含有模 J素電極控制電路模組。其中，該像素模組係至少=組及 强】極及像素電極背面接合端；及該像素電極d-個像 導體、多晶料非晶料製程製作至少Si ί係可 ，素電極㈣魏a件和像素雜導冑 =硬數 j連接接合技術，電性連接該像素控制電路模2 些電 】路的像素電極導電端至該像素模組之所對應像素極控制 %’藉以顯城像賴組之各像侧案。可保主*面接合 之特性’並提高產品良率及降低生產成本者。’、 （4不面板 【先前技術】 本發_、有_—麵示裝置及其製作方法， 示裝置及其製作方法，其主要構造係包含有^: 及一像素電極控制電路模組。盆中 象素拉、、且 -偏去m你主④一」、f雜細組係至少包含有 ‘個像素電極及像素電極背面接合^ · 製作至少包 模組係可選擇利用半導趙、多非=程電極控制電路 ^有個像素電極控㈣路元件和像素電極導電端。隨 也之傻音接接合技術’電性連接該像素控制電路模 庫像:像素電極導電端至該像素模組之所對 接合端’藉以顯示該像素模組之錢素圖案。 份穿透:種式、穿透式及部份反射部 光學反射性質之材料製作，===素電極係以具有良好 像，但當人射級弱時，叫 y極反射光線而顯不影 八颂不效果也訧相對變差。穿透式液 5 麻透料電材料製作像素電極，再配 2而顯示影像。其缺點則是背光之産生需耗用入 明導電材:⑽==f::反射部份穿透則結合透 上述反射====作樹她，具有互補The invention relates to: a display device and a manufacturing method thereof, a display device and a manufacturing method thereof, the main structure of which comprises a mode electrode electrode control circuit Module. Wherein, the pixel module is at least a group and a strong electrode and a back surface of the pixel electrode; and the pixel electrode d-image conductor, the polycrystalline amorphous material process is at least Si γ, the element electrode (4) Wei a Piece and pixel hybrid 胄 = hard number j connection bonding technology, electrically connected to the pixel control circuit modulo 2 of the pixel electrode conductive end to the corresponding pixel of the pixel module control % 'by the city Each of the groups has a side case. It can protect the characteristics of the main surface and improve the product yield and reduce the production cost. ', (4 no panel [prior art] this hair _, there _ - face device and its manufacturing method, device and its manufacturing method, its main structure includes ^: and a pixel electrode control circuit module. The middle pixel pulls, and the -biased m your main 4", the f-hybrid group contains at least one pixel electrode and the pixel electrode back-joining ^ · Making at least the package module can choose to use the semi-guided Zhao, The non-process electrode control circuit has a pixel electrode control (four) circuit component and a pixel electrode conductive terminal. The following is a silly sound bonding technology "electrically connecting the pixel control circuit module image: the pixel electrode conductive end to the pixel module The junction end' is used to display the pixel pattern of the pixel module. The penetration: the material of the type, the transmissive and the partially reflective portion is made of a material, and the === element electrode has a good image. However, when the person's shooting level is weak, it is called y pole to reflect the light and it does not affect the gossip. The effect is also relatively poor. The penetrating liquid 5 hemp transparent material is used to make the pixel electrode, and then the image is displayed with 2. The backlight is produced by using the conductive material: (10) ==f:: The reflection part penetrates and combines the above reflection ==== to make her a complement
=習職晶_面板之像素構衫如第1A圖所示， ，構係包含有複數條橫向之閘導線（gate line 2 =之資料線（data llne) 133交錯而_ t ，料線133與閘導線131交錯之部分設置形成—薄膜^ 則9 °其中、，由資料線133延伸形成—源電極134，閘導線曰;31 血形成一閘電極132 ’而沒極電極135則跨接於間電極132 可使it Hi配合位於液晶層另—側的電極（未顯示），即 傻ir 之大小而旋轉不_角度，藉以顯示影=Practical crystal _ panel pixel jersey as shown in Figure 1A, the structure contains a plurality of horizontal gate wires (gate line 2 = data llne 133 interlaced _ t, material line 133 and The staggered portions of the gate wires 131 are arranged to form a film ^ 9 ° therein, extending from the data line 133 - the source electrode 134, the gate wire 曰; 31 the blood forms a gate electrode 132 ' and the electrode electrode 135 is bridged between The electrode 132 can make it Hi cooperate with an electrode (not shown) located on the other side of the liquid crystal layer, that is, the size of the silly ir is rotated and not angled, thereby showing the shadow
在一習用之像素構造，因各薄膜電晶體139將合佔 面積’致使有效顯示面積減少’其顯示效二因此 -另外’請參閱第IB ®雜晶_面板之局部剖面構 圖其主要係於—玻璃基板1G上形成複數簡膜電晶體 儲存電容15 ’再於其上形成複數個像素電極12，各像素 電極12分別利用一接軌136與薄膜電晶體14及儲存電容还 連接’像素電極12上則依序為液晶層13、透明· ，、透明基板17，並配合位於液晶層上下兩侧的液晶配向層 (未顯示），使液晶晶體依電位之大小而旋轉不同的角度藉二 顯示影像之構造。 之判，係f用之部份反射和部份穿透液晶顯示面板 二 ®。其主要係於—賴絲2() 22 it，)，再於其上形成複數 ^^極22可稭由預先形成一介電層2卜使像素電極 並配部份26分卿成不同之液晶厚度， 月^ ΐ 液晶層23、透明電極24與透明基板27 =〜上下兩側的液晶配向層（未顯示）。用上述之構造 2 ί模Ϊ 28及其他光學薄膜’即可使該顯示裝置具有部份反 不易口：^丨牙透之功能、但該整體像素區域之液晶厚度的均勻度 質不^㈣^影響各像素之亮度和響應時間’使影像顯示品 甘制。工製作。在玻璃基板上製作薄膜電晶體之陣列電路， 非曰求與半導體ie製鋪似，過程摘為·。然而， ^曰石夕和多晶__電晶體之電越紐 半導體單㈣製程之電晶體。另外，上述構造中^ =:::電晶體所佔之區域不具顯示能力，亦使整體顯示 _，則m反射式半導驗晶顯示構造係如第沈圖 :製3°上’利用半導體積體電路製程方 體31及電容32等控制電路之元件。其 ^電日日體31包含魏極及源極，並於—閘極氧化層上 極，各電路元件_設有隔離層33加以區隔。該電容元 介電上形成一^極，並於該下_上形成― 後，可於包愉各输偷撒===== 1324703 34加以保護，同時亦具有絕緣與隔離的作用。· 絕緣層34形成後，再分別於汲極1極及電 位置進侃開口 ’然·各開口中. 鎮及铭等導電物質，分別連接錄、源極及上電極 栓（Plug) 35。在絕緣層34之表面上形成規劃之路電 並透過導錄35侧紐連触祕、_與餘之 ::於各導電路線36上形成另一絕緣層37覆蓋其上二: =37之表面設置另—導電路線兆和—光遮蔽層邪‘ 漫射光，防止漫射光碰撞電晶體及電容元件 設位置設置像素電極—= =像素祕49則利用一導電栓和對應之 關電晶體31做電性連接。 L、像素開 m極49上可形成―賴層46，除保護像素電極之外， 电勺口^效果。於該保護層46上則可設置—液晶模 半導==晶卜定向膜45與47 ’及至少一液晶層43夾設於」 ^基板3〇上之像素電極（pixel eiectrGde) 49與 基板42上之另一透明電極48和。 =，上述制反射式料體液晶顯示之構造及 二3於像素電極49上加—保護層46，容易在像素電2 會因成凹陷’設於保護層46上的液晶料膜“ 電;。、’整而影響到液晶的定位效果。此外，由於該像素 的=由沈積各種不同厚度及定細不同圖ϊ 成曰早層、絕緣層、及導電層等疊加後，容易造 曰曰0中各㈣電極顧域和各料電辨坦度不够均勾。即 8 使在像素％極與像素電極之間隔區填人絕賴可做為縫隙充填 ，用，即使隨後再以化學機械磨* (Chemical Mechanical cashing; CMP)技術使其表面平坦化，也容易在晶圓的中央 緣部份使像素電姉成凹陷區域，無法達觸*光學要求 的平坦度’而使顯示效果大打折扣，並且影響生產良率與品質。 再則，®為斷射式半導體H顯示構造係包括半導體製 4〜5週)和液晶製造流程（約2〜3週）等複雜過程，且 义，疋、、生產’造成時程過長和成本高等問題。任何於 ΐίίίί中所產生的細微異物，雖然不致影響電晶體及電容 里二合i夂之凡件的正常功能，但到後段液晶製造流程時，該 二物二被各項製程步驟累積放大，並影響液晶光學之控制效 失尤素和Α_的反射式半導體液晶顯示產品的良率損 圖所另外於ϋ用主動式有機發光二極體(〇LED)構造係如第3 膜麵5丨、顿編卜 極，並於-閘極氧化層上生成有一閘電極 53加以區隔，並於汲極、源極及In a conventional pixel configuration, since each of the thin film transistors 139 will occupy a combined area, resulting in a reduction in the effective display area, the display efficiency is two. Therefore, please refer to the partial cross-sectional composition of the IB ® hetero-crystal panel, which is mainly used in - A plurality of pixel electrodes 12 are formed on the glass substrate 1G, and a plurality of pixel electrodes 12 are formed thereon. Each of the pixel electrodes 12 is connected to the thin film transistor 14 and the storage capacitor by a connection 136, respectively. The liquid crystal layer 13, the transparent substrate, and the transparent substrate 17 are sequentially arranged, and a liquid crystal alignment layer (not shown) located on the upper and lower sides of the liquid crystal layer is used to rotate the liquid crystal crystal according to the potential of the potential to display the image structure. . The judgment is to use part of the reflection and partial penetration of the liquid crystal display panel II ® . It is mainly based on - lys 2 () 22 it,), and then formed on the plurality of ^ 22 poles can be formed by pre-forming a dielectric layer 2 to make the pixel electrode and the portion 26 divided into different liquid crystal Thickness, month ^ 液晶 Liquid crystal layer 23, transparent electrode 24 and transparent substrate 27 = ~ liquid crystal alignment layer on the upper and lower sides (not shown). By using the above structure 2 Ϊ Ϊ 28 and other optical films ′, the display device has a partial anti-fat function: the function of the squeaky tooth, but the uniformity of the liquid crystal thickness of the entire pixel region is not ^(4)^ Affect the brightness and response time of each pixel' to make the image display. Production. The array circuit of the thin film transistor is fabricated on a glass substrate, and the process is similar to that of the semiconductor IE. However, ^ 曰 夕 夕 and polycrystalline __ transistor of the electric 纽 semiconductor single (four) process of the transistor. In addition, in the above structure, ^ =::: the area occupied by the transistor does not have the display capability, and the overall display _, then the m reflective semi-conducting crystal display structure is as shown in the first sink: 3° on the semiconductor product The components of the control circuit such as the body circuit processing block 31 and the capacitor 32. The electric day body 31 includes a Wei pole and a source, and is located at the upper pole of the gate oxide layer, and each circuit component is provided with an isolation layer 33 to be separated. The capacitor element is dielectrically formed with a ^ pole, and formed on the lower _, and can be protected by the package sneak sneak ===== 1324703 34, and also has the function of insulation and isolation. · After the insulating layer 34 is formed, it is placed in the opening and opening of each of the drain poles and the electric position. The conductive materials such as Zhen and Ming are connected to the recording, source and upper electrode plugs 35 respectively. A planned road surface is formed on the surface of the insulating layer 34 and is connected to the surface through the guide 35 side, and the remaining: an additional insulating layer 37 is formed on each of the conductive paths 36 to cover the surface of the upper surface: = 37 Set another - conductive path mega - and light shielding layer evil ' diffuse light to prevent diffused light from colliding with the transistor and the capacitive element to set the position of the pixel electrode -= = pixel secret 49 using a conductive plug and corresponding off transistor 31 for electricity Sexual connection. L, the pixel opening m pole 49 can form a "lying layer 46", in addition to protecting the pixel electrode, the electric spoon mouth ^ effect. The protective layer 46 may be provided with a liquid crystal die semi-conducting == crystal orientation film 45 and 47 ′ and at least one liquid crystal layer 43 sandwiched between the pixel electrodes (pixel eiectr Gde) 49 and the substrate 42 Another transparent electrode 48 and above. =, the structure of the reflective liquid crystal display of the above-mentioned reflective material and the addition of the protective layer 46 on the pixel electrode 49 make it easy for the pixel electricity 2 to be recessed as a liquid crystal film provided on the protective layer 46. 'Integrally affects the positioning effect of the liquid crystal. In addition, since the pixel = is deposited by stacking various thicknesses and different thicknesses, the early layer, the insulating layer, and the conductive layer are superimposed. Each of the (four) electrodes and the materials are not sufficiently arbitrarily flat. That is, 8 can be used as a gap filling in the interval between the pixel % pole and the pixel electrode, even if it is followed by chemical mechanical grinding* ( Chemical Mechanical cashing; CMP) technology flattens the surface, and it is easy to make the pixel into a recessed area at the central edge of the wafer, which can not reach the optical flatness required by the 'optical', and the display effect is greatly reduced and affected. Production yield and quality. In addition, ® is a break-through semiconductor H display structure including semiconductor manufacturing 4 to 5 weeks) and liquid crystal manufacturing process (about 2 to 3 weeks) and other complex processes, and meaning, 疋, production ' Causing long time and high cost Any slight foreign matter generated in ΐίίίί, although it does not affect the normal function of the two components of the transistor and the capacitor, but in the latter stage of the liquid crystal manufacturing process, the two objects are cumulatively enlarged by various process steps. And the loss rate of the reflective semiconductor liquid crystal display product which affects the control effect of the liquid crystal and the Α_ 另外 另外 另外 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动丨, 顿 卜 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,
=分別電性連接至各控制電路树之汲極、源I 合等。尚可在介電絕緣層53上形成規劃之 - 過導電栓55分別電性連接至 線56 ’並透 及電容等。各導電路線56上，尚原極、間極 覆蓋其上’秘介電姆層57之上設置形成_^緣電層路= 叫4703 58’其係為可電性連接至該有機電激發光二極體·像素％之陽電 極層59，並於該陽極層59上之表面覆蓋一有機電激發光介質 層940。隨後，再於該有機電激發光介質層540覆蓋形成另一 陰電極層541和有機發光二極體像素之保護層542。該有機發 光二極體(GLED)構造也-樣面臨開口率無法提昇和無法達到顯 ，光學要求的平坦度，_影響顯示明亮度和均勻性而使顯·示 效果大打折扣’並且影響生產良率與品質。此外，該結構皆是 依序完成’面臨生產時程過長和製造控制的問題 本相對提冑_題。 座成 口此’針對上述習用構造及其製作方法之缺點等，提出一種 新賴的解決方案’設計出—種簡單有效的構造改良，不僅可 產品效能和簡化生產製程，確保生產良率及產品之可靠度，尚可 大幅降低成本，長久以來一直是使用者殷切盼望及本發明人欲行 解決之困難點所在。 队奴仃 【發明内容】 參 I月之目的，在於提供一種 指-種模組化顯示裝作方法’尤 像素模組及-像素電極’ 5主要構造係包含有-少包含有至少-個像她。其中，該像素模組係至 控制電路模組係可選擇利 接口知，及该像素 作至少包含有-複數個夕曰9石夕及非晶矽等製程製 端。隨後制電路树和像素電極導電 電路模組之像素電極控制、’電性連接該像素控制 之所梅素電極背面接:端，藉二== 10 圖案者。 复德去^月之目的’在於提供—種顯示裝置及A之製作方法， 製作，並減+導體、Μ喊非晶石夕製程 組或電性接合模組結合者。 。像素拉、，且月场 ^明之又-目的’在於提供一種顯 顯不襄置之像素模組與像素電極 ς要^ 連接模組，細提高裝置之_縣=路之間’可如一電性 顧-2明之另—目的’在於提供—種顯示農置，其主要系於 模=可=素模組與像錢極控制電路之間，可增設一發光 ^可於桃光線不狀提_、，藉以_置之顯示^ 本^明之次要目的，在於提供一- 〇+ _〇 玉^ 可松兩生産良率及産品可靠度者。 本發明之又-目的’在於提供—種顯示 石峨嶋彻⑽咖半=^ 夕及非晶料技術製作，可提高像素之有效面積者。 本發明之又-目的’在於提供—鶴示裝置，鱗 2區之下表面系呈錐狀凸出，可令照射到反龍下表面之反 射光可拆射到透射區，以加強出光量者。 反射目的’在於提供—種顯示裝置，其像素電極 反射&之上表面糸呈凸面態樣，可加大可視角度者。 .本發明之又-目的，在於提供—義示^，尚可增設有 一透鏡組，藉以提升顯示品質及放大影像者。 整體一目的’在於提供一種顯示裝置’其像素模組 提高整體之成像品質者。 ;提仏種顯示裝置，可於不同像素 _制模組之間設置導電接腳與導電接點，可結合多個控制模 組而提供多樣性之功能者。 用-===:;，裝置，其主要係利 夕後本士 與像素電極控制模組，使顯示裝置 控制模組與像素模組可分別製作再予以結合，可大 置k向生產之良率及可靠度者。 本發明之次要目的，在於提供一種顯 之製程可與像素餘控娜έ ，、像素拉、，且 程和降低製作成本者。之“分離，可大幅縮減生產時 本發明之又-目的，在於提供一種顯示裝置， iltif像素模組系分離設置而以導電通路加以連接'，可保 有主動式扣面板之優點並加大有效顯示面積者。 本發明之又-目的，在於提供—種啦裝置，其像 基板與導電通路可以透明材質製 -声鮮A 作將像素基板下表面製作為 者r…導光，可配合發光元件而形成背光模組 I把本之又—目的’在於提供—種顯示裝置，其電性轉接 土板、像素馳、像素電極控健組 與導電通路等可利用可麻併制此B 難、*且Θ光拉組 板者。Ij棚了撓材貝製作’即可形成-可撓式顯示面 本發月之又目的，在於提供一麵示裝置，其 係可以一圖案化電路蔣伤l + i + 电逋路 电路將像素電極連接至電性轉接基板下表面之 12 1324703 預設位置處，再與像素電極控制模組晶 利於大尺寸面板之製作者。 5曰B片松組連接’可 用本發社又_目的，纽提I·林置，其構造亦可運 用於有機電激發光二極體和場發輯_稀置 運= Electrically connected to the drain of each control circuit tree, source I, etc. It is also possible to form a plan on the dielectric insulating layer 53 - the over-conducting plugs 55 are electrically connected to the wires 56', respectively, and are permeable to capacitors and the like. On each of the conductive paths 56, the primary pole and the interpole cover are disposed on the upper layer of the secret dielectric layer 57. The electrical layer is formed to be electrically connected to the organic electroluminescent light. The anode/pixel % of the anode electrode layer 59 and the surface of the anode layer 59 are covered with an organic electroluminescent medium layer 940. Subsequently, the organic electro-excitation optical medium layer 540 is further covered to form a protective layer 542 of the other cathode electrode layer 541 and the organic light-emitting diode pixel. The structure of the organic light-emitting diode (GLED) also faces an inability to increase the aperture ratio and can not reach the apparent flatness of the optical requirements, which affects the brightness and uniformity of the display and greatly reduces the display effect and affects the production. Rate and quality. In addition, the structure is completed in order, and the problem of excessive production time and manufacturing control is relatively high. In view of the shortcomings of the above-mentioned conventional structures and their manufacturing methods, a new solution is proposed to design a simple and effective structural improvement, which not only can product efficiency and simplify the production process, but also ensure production yield and products. The reliability can still greatly reduce the cost, and it has long been a user's eager anticipation and the inconvenience of the inventor's desire to solve. Team slaves [Invention content] The purpose of participating in the month is to provide a finger-type modular display installation method 'Especial pixel module and - pixel electrode' 5 main structure contains - less contains at least - like she was. Wherein, the pixel module is connected to the control circuit module, and the pixel is configured to include at least a plurality of process terminals, such as a 曰 曰 9 夕 及 and an amorphous 。. Then, the pixel electrode of the circuit tree and the pixel electrode conductive circuit module is controlled, and the backside of the mesin electrode of the pixel control is electrically connected to the end, and the second==10 pattern is used. The purpose of Fude to go to the month is to provide a display device and a method for manufacturing A, to produce, and to reduce + conductor, screaming amorphous stone process group or electrical joint module. . Pixel pull, and the moonfield ^ Mingzhi--the purpose is to provide a pixel module and a pixel electrode to be connected to the module, and to improve the device between the county and the road can be like an electric Gu-2 Mingzhi's other purpose is to provide a display type of agricultural equipment, which is mainly between the mold = can be used between the module and the money-controlled circuit, and can be added with a light-emitting light. By means of _ display of the display ^ The second purpose of this ^ is to provide one - 〇 + _ 〇 ^ ^ Komatsu two production yield and product reliability. A further object of the present invention is to provide a display of the technique of making an effective area of a pixel by the technique of making a stone (10) coffee half-half and an amorphous material. The purpose of the present invention is to provide a crane display device, wherein the surface of the scale 2 region is tapered, and the reflected light that is irradiated onto the lower surface of the anti-dragon can be removed to the transmission area to enhance the light output. . The purpose of reflection is to provide a display device in which the pixel electrode reflects & the upper surface 糸 is convex, and the viewing angle can be increased. A further object of the present invention is to provide a lens set, which can be additionally provided with a lens group for improving the display quality and magnifying the image. The overall purpose is to provide a display device whose pixel module improves the overall image quality. The display device can be provided with conductive pins and conductive contacts between different pixel modules, and can provide multiple functions by combining multiple control modules. With -===:;, the device, which is mainly used to implement the display device control module and the pixel module separately, can be combined and produced. Rate and reliability. A secondary object of the present invention is to provide a process in which the process can be coordinated with the pixel, the pixel is pulled, and the manufacturing cost is reduced. The "separation, the invention can be greatly reduced in production--the purpose of the invention is to provide a display device, the iltif pixel module is separately arranged and connected by a conductive path", which can retain the advantages of the active button panel and increase the effective display. The object of the present invention is to provide a device in which the image substrate and the conductive path can be made of a transparent material - the sound fresh A is used to make the lower surface of the pixel substrate as a light guide, which can be combined with the light-emitting element. Forming the backlight module I, the purpose of the present invention is to provide a display device, the electrical transfer earth plate, the pixel camera, the pixel electrode control group and the conductive path can be used to make the B difficult, * And the Twilight pull board set. Ij shed the flexible material shell to make 'can be formed - flexible display surface. The purpose of this month is to provide a device, which can be a patterned circuit. The i + electric circuit circuit connects the pixel electrode to the 12 1324703 preset position on the lower surface of the electrical adapter substrate, and then the pixel electrode control module is crystallized to the maker of the large size panel. 5曰B chip loose group connection' Available _ And social purposes, Niuti I · Lin set, operation also configured for organic electroluminescent diode and the field counter hair lean operation, Series _
提高生產良率並降低生產成本者。 間H 【實施方式】 兹為使貴審查委員對本發明之特徵 成之功效有進-步之瞭解與認識，謹献所達 合詳細之說明，說明如後： ^佐叫佳之實施圖例及配 首先’請參閱第4A〜4C ®，係分別為本 下_基板之示意圖和部份放大圖=象素拉、，且之 像素下電極基板100上表面之預’其主要係於— 元件101 A像素顯示元件⑻之分^成至少一個像素顯示 示元件101包含有複數個1Q3 #、二:’其中該像素顯 晶填充口，作為液晶填二設形成至少—液 域⑽系為可選擇於·各像素單元顯示區 至少-凹請，再經由沈積、二 轉印技術於像素單元顯示區域103上，=或錯由其他 素單元電極106，而該像^ n &成疋義各別觸立的像 摆刹田c m 像素早70電極1G6系為可依實際需I! ，利用反射材料、透明材料和其中組 反射式或雜聽和部份_ 帛&成穿透式、 ,A cn 牙边忒之像素早兀電極106。 π參㈣5A〜5B目’係分別為 基板之示意圖和 ^月中像素杈組之像素上 素上電極基謂下表如㈣，其酬於一像 經由沈積、蝕刻和清洗等’選擇利用透明材料，並 "先等步驟餘由其他神技術於像素上電 1324703 極基板200下表面上，定義完成像素上電極層2〇ι，並同時盥 .該像素單元電極⑽-起作為控制液晶晶體旋轉開闢之用者。、 亦可於對應與該像素下電極基板議之分割區域⑽形成另一 具有凹槽之分割區域2〇2。 請參閱第6A〜6B係為闡示像素模組之上電極基板及下電極基 板之截面示賴’其中該像素上電極基板之下表面和像素$ 電極基板1GG之像素單元顯示區域⑽，可選_加形成至少一層 鲁光學溥膜層，以作為光學增亮層、偏光層、液晶定向層及光學補 償層之用’另外亦可再形成一彩色渡光層（皆未標示於第1册 圖），利以增進該像素顯示之功能。該像素上電極基板咖和下電 極基板100之相鄰表面，亦可選擇個別形成一凸起部謝和凹起 部107 ’而該凸起部207和凹起部1〇7係可藉由侧等製程所形 成’亦可利用其他壓模或轉印製程技術所形成，用以增進該像素 上電極基板200和下電極基板1〇〇之精密對準對位之用。再則， #可選擇藉由陽極接合(咖仙bonding)、共晶接合(eutectic bonding)、其他黏著接合_ing)、局部接合 (localized bonding)、低温接合中任—組合方式所形成之接 &層117藉以接合該像素上電極基板200及下電極基板1〇〇，如 韓圖所示。其中該接合步驟係可選擇以全晶圓和含至少一個像 素顯示元件101之部分晶圓’同時大量生產製造以簡化生產製程 ⑽程及降低生產成本。於接合完成後，即可把該像素模組儲存放 置於非亦淨至中’而该像素模組半製品在後續裝造程序前，也不 1 ==：T崎咖娜㈣產品可靠性 製造之顯示1置=言之，本發明之生產成本會較由習知技術 如4==為本發明中像素模組使用背面研磨技術 自該像素下電極二刻等步驟，可選擇 (未標示)於該像mt。亦可附加形成—偏光層 ^ 2〇〇 100 108 用該上述之研冑、光之用°'村透過選擇使 =咖直接磨薄至該像素上電極基板⑽;= 凹槽底部209，並將兮饴春l« 刀口J區域202 露出來。將雜素上電極基板細之分割區域202暴 構複數Π 基板則之下表面⑽以_式建 m至該像素單元電極⑽，其中該貫穿孔㈣ 成氧化膜、氮化及其他絕緣材料uw穿孔 :=貫穿孔U〇再以導電材料(如導電金屬、導電金屬 ==非金屬與導電高分子及其組合式之其中之一)填充 如第6F圖所示。將該導電物質填充入貫穿孔㈣時，一多餘 Π3讀細像素下電_ _之下表面⑽ 了、擇經由化學機械研·MP)、祕刻、電漿舰刻、曝光、 15 1324703 】1⑽之方式侧去除該多餘之導電材糊 示。在本 欽、紹、銅、汞、m該導電材料係可為欽、氮化 钔水鎳、錫、鉛、銀、鎢、金、求 鉛、導電南分子、其他導電性物質或上述之組人、、’.夕’ 屬合金填充於該壕溝内。該像素電極背 h物^金 是非常有彈性，可選擇於磨_像«_二二驟 基板等步歡麵之後。 κ極餘及下電極 如何發明之像素電極背面接合端出 端116係可選自經由該像素下電極基板100m=接合 形成(如第7A圖所示)及自上 …之下表面108單獨 像素極基板100之貫穿孔^幵^成相互對應且貫穿該 由德病(如苐圖所示），並選楼奴 沈積、導電材料層 作電性連=二:i:峨電極控制模組之導電端 背面接合端m之預設位置上成於該像素電極 ⑽’其中該犧牲層118係可·為於子犧牲層 晶矽、複晶矽、各類矽化物、非金 金屬材料、單 ^ 116，如第7C和7D圖所示。隨後，經由二面接合 可全部或部份覆蓋於該犧牲層ιΐ8和专^另二導電材料 116上，並且可與該像素電極背面接入端月面接合端 後續並選細對準，、曝先接二⑶^ 電極背面116上之該犧牲層118，以形成—可供該像素 印圖所示水平調整之细19，如第7Ε和 如^^’。藉以增加該之上、下水平調整能力， 式建广8B _特別闡示本發明之像素模組以不同方 iUrtr賴。如第8a騎示，可⑽像素模組下 步驟或藉由其他轉姓刻和清洗等 下表面預定位二先形=凹Γ2Γ莫組上電極基板250之 ==青洗等步驟或藉==== = 25:上’定義完成像素上電極層251，可同時與該像= 利用上述液晶晶體旋轉開闢之用者。隨後，可重覆 ===，心= 上凸曲面及細曲面、 像素上電極μ 26卜各像素單元電極166、和^=建構= HI:該光學曲面係為可搭配其他光學透鏡系統，=3 计之光予“，可私料該㈣顚之辭舰，如第8B圖又 所示。 請參閱第9A娜系爲本發明一較佳實施例之像素模組、 姓人、像錢極控制模組之局部剖面示意圖及模組間不同 =二=3剖面示意圖。本實施例系爲—具有部份透射式 6〇主要# 之液裝置。如圖所示，其中像素模組 Γ間69，錢素單元電極62分別包含有~ 及-透射區622。其中，反射區621可利用 ^或其他預計具有良好反射能力之組合導電材㈣作 ^區622則以透明導電材質如銦錫氧化物（_料，可= 各反射區621位於各像素電極62 v 繞該反射區㈣設置，如第1〇A圖所示。可環 2反射區621之配置亦可以其他形式實施，如透射=22 ::=6Γ:設置，或透射區622及反射_ 像素电極62之一側，如第10Β圖所示等等。 位 像素電極62上尚可形成—伴窄 於，而保護層63上_^_^以賴各像素電極 編之下表面對應於二電第極72向：4。可選擇鳩 各形成至少-貫穿孔，其中二 位置，以勉刻的方式 化石夕膜及其他絕緣材料形選擇，氧化膜、氮 曝光、對準、清洗和射_、電_刻、 面接合端623(如上述第6G圖所 ' 以凡成該像素電極背 於其下表面形成-透明電極 象素上電極基板71則可 成-第二定向膜74’·液晶；於透明電極72之下表面形 日日層66則夹設於像素下電極基板“上 1324703 之第-定向膜64與像素上電極基板71 之間。另外，像幸下m 衣面之第二定向膜74 71之上下表面與像素上電極基板 71之上表㈣可分別設有—第—偏光層6 = 偏灣’咖晶體之特性== 本發明之像素電極控制模組9{)系可選擇 及非晶石夕等製程技術製作，選擇將各像素控制夕 顯示控制電路整合於至少一晶片中。如選擇於一半導體牛 法選擇製作如電晶體及_ 像素控制電路凡件。其中該電晶體係包含有沒極 93」並於-閘極氧化層94上生成一閘電極95 則設有7L件離層96加以區隔。電容元㈣ 疋0 離層％上依次形成—底電極奶、—介電層件隔 電路讀元減，再以二氧化鄉成—絕緣介電 以保護，同時亦具有絕緣與隔離的作用。 s加 絕緣介電層98形成後，分別於汲極92、源極 =等㈣細_棒，再_料 = 如欽、統鈦、鶴及銘等’分別連接汲極92、源極即及上^ ，973而形成導電通路19卜193及195。在絕緣介電層98 = 表面上，亦可規劃形成導電路線199，分別透過一此 电路線可依實際需未，可重覆形壯述各層⑷㈣。等 尚可選擇於絕緣介電層98表面上之規劃導電路線199 ^導電接點⑽’並可戦另—絕緣介電層198覆蓋於 各導祕線199上。於絕緣介電層198尚可選擇設置一反射居 丄J厶叶 162 ’再於其表面覆蓋—絕緣介電層娜。其中 了可防止控制電路受刭早aL , 町層ibZ除 表__=干擾之外，尚可晴光基⑽中漫射 背光模組88則可具有多種實施態樣。其中 傳導ίΪη 圖)及另一導光基板8〇(如第9Β圖） 傳導至该像素模組60之各像素單元電極62上 板61和導光基板80之下表面系可選擇經由沈積= 洗等步驟和藉由其他轉印技術職形成—具有漫射之表 置之各件77所纽之絲触上均自散佈到裝 紅62上。該導光基板80並可於對應像素模 、:首6〇之各像素電極背面接合端623處設置一以導電材質製作之 導電检82，时電性連接該像素電極控制模組90之導電接點186 與各該像素單元電極62之像素電極背面接合端62卜上述實施 例中各‘電栓82之側邊周緣尚可各設一絕緣層，除了確 保電路之S外’尚可提供對導紐82與其週邊元件之保護效 果。爲了提高其光線之傳導效果，可選擇利用透明之導電材質 如透明導電氧化材質（Transparent Conducting 〇xide;勘， 如ITO)、導電高分子、及其組合式之其中之一製作各導電检 82 °另外’該背光模組88亦可選擇藉由一介於像素模組6〇與 像素電極控制模組9〇之間有機電激發光元件 (organic eleCtr〇luminescent device; 〇LED)製作形成，直接利用該有 機電激發光το件直接向上發光提供背紅光源。此外 ，該上述 各基板尚可選擇以可撓性（flexible)材質製作，以利於可撓 性顯示面板之製作。 20 ，模齡別完錢，之純組合，其組合態樣系可如 A圖與帛11B圖所示。其中，設於導光基板8〇之導電检 接iJit及向下凸出於導絲板8G之上下表面，分別形成上 $⑻及下接腳183。上接腳⑻可于組合時電性連接像素 电極基板61之電極背面接合端623 ;下接腳183财轉像 t電極控制模組9〇之導電接點⑽電性連接，或直接舦= =極控制模組90所預設規劃之導電路線199電性連接，藉此而 導=素單元電極62與像素電極控制模組90之像素控^路 兀件（如第11A圖）。 η工利电路 再者’本發明尚可於像素下電極基板61之電極背面接合端 4 _層188加以隔離各電極背面接 素電極控制模組90之導電接點186，尚可凸 4 2 電性連接背梢0 1 極皮面接合端623與導電接點 電路元素控制 _ °之目的。另外’加長該電極背面接 A 623或導電接·點186之長度，尚可直接取 ， 導通像素單元電極62盥後去雨* 電权82取侍 元件之效果。 象素毛極控制模組90之像素控制電路 請參閱第m圖及第12B圖，系分 =實施態樣之局部剖面示意圖。 单兀電極反射區621尚可利用甘^掛， 不知月之像素 效能。其中，可將像素單元電極'顯示裝置之 面啊，侧;88之光線照射物區下表 射穿出，以提高背光^ 區域而最後由透射區622透 儿又。各像素單元電極反射區621之上 1324703 表面624尚~j製作成凸面態樣，精由四面之反射擴散作用，可 =成像時_透射區622不足之缺憾，亦可着液晶顯示 裔像素間的間隙問題。同時，該上表面624局部之凸面設計， 可使液晶分子于排列時産生少許角度偏移，藉以增加液晶層66 之反應速度，提高顯示品質。 戎像素單70電極62之透射區621與反射區622之表面尚可 利用光$度職術來調整透祕與反射區上需要作不同的光程 差的補美或者利用製作透射電極區621與反射電極區622不 同厚度的差別來達到補賞光程差的效果。 «月參閱第13A〜13B’系本發明另一實施例之局部剖面示意 圖。如_不’其主要構造鮮9A，9BWK示實侧大致相同。 惟本實_將本㈣制於-透射歧關稍置，故其像素 電極控制馳90與背統組88之構造並無 也 編中，其像素單元電極36嶋以透明導電材料（如 ’系分別爲本發明又一實施例之局部剖面示 意圖。本實施杳 置。如圖所示， ^施例^本發明之技魏祕―反射;该晶顯示裳 其主要構造条句冬古—y务主k u Γ* Λ Λ —Increase production yield and reduce production costs. Inter-H [Embodiment] In order to make your reviewer's understanding and understanding of the characteristics of the present invention, I would like to provide you with detailed explanations and explanations: ^Zuojia's implementation of the legend and the first 'Please refer to 4A~4C ® , respectively, for the schematic diagram of the lower substrate and the partial enlarged view = pixel pull, and the pre-pixel on the upper surface of the pixel underlying substrate 100 is mainly used - component 101 A pixel The display element (8) is divided into at least one pixel display element 101 comprising a plurality of 1Q3 #, two: 'where the pixel is crystal-filled, and the liquid crystal is filled to form at least - the liquid domain (10) is selectable The pixel unit display area is at least-recessed, and then deposited on the pixel unit display area 103 via a deposition or two transfer technique, = or wrong by the other element unit electrodes 106, and the image is indistinguishable from each other. Like the pendulum field, cm pixels, 70 electrodes, 1G6 system can be used according to the actual needs I!, using reflective materials, transparent materials and a group of reflective or miscellaneous and partial _ 帛 & into a transmissive, A cn teeth The pixel of the pixel is earlier than the electrode 106. π 参 (4) 5A~5B mesh' is a schematic diagram of the substrate and the pixel on the pixel of the group is the following table (4), which is used for the selection of transparent materials by deposition, etching and cleaning. And " first step by step by other god technology on the pixel to power on the lower surface of the 13247703 polar substrate 200, defining the pixel upper electrode layer 2〇ι, and simultaneously. The pixel unit electrode (10) - as a control liquid crystal crystal rotation Open up users. Alternatively, another divided region 2〇2 having a groove may be formed in the divided region (10) corresponding to the lower electrode substrate of the pixel. Please refer to FIGS. 6A to 6B for illustrating the cross section of the electrode substrate and the lower electrode substrate on the pixel module. The pixel unit display area (10) of the lower surface of the pixel upper electrode substrate and the pixel electrode substrate 1GG is optional. _Adding at least one layer of ruthenium optical film to serve as an optical brightening layer, a polarizing layer, a liquid crystal alignment layer and an optical compensation layer. Alternatively, a color light-emitting layer may be formed (all not shown in the first album). ), to enhance the function of the pixel display. The adjacent surface of the pixel upper electrode substrate and the lower electrode substrate 100 may be selected to form a convex portion and a concave portion 107', and the convex portion 207 and the concave portion 1〇7 may be processed by a side process. The formed ' can also be formed by other stamping or transfer process techniques for enhancing the precise alignment of the electrode substrate 200 and the lower electrode substrate 1 on the pixel. Furthermore, # can be selected by anodic bonding, eutectic bonding, other adhesive bonding _ing, localized bonding, and low temperature bonding. The layer 117 is bonded to the pixel upper electrode substrate 200 and the lower electrode substrate 1A as shown in the Korean diagram. Wherein the bonding step is selected to be mass-produced at the same time as a full wafer and a portion of the wafer containing at least one of the pixel display elements 101 to simplify the production process (10) and reduce production costs. After the bonding is completed, the pixel module can be stored in the non-net to the middle' and the pixel module semi-product is not in the subsequent manufacturing process, nor is 1 ==: T sakina (four) product reliability manufacturing The display 1 is set to say that the production cost of the present invention may be selected from the conventional techniques such as 4==, the pixel module of the present invention uses the back grinding technique from the bottom electrode of the pixel, and the like, and may be selected (not labeled). In the like mt. Alternatively, a polarizing layer can be formed to form a polarizing layer ^ 2 〇〇 100 108. With the above-mentioned mortar and light, the '' coffee pass is selected to directly thin the coffee to the upper electrode substrate (10); = the bottom 209 of the groove, and Hunchun l« Knife J area 202 is exposed. The finely divided region 202 of the impurity upper electrode substrate is constitutively complexed, and the lower surface (10) of the substrate is formed into a pixel unit electrode (10), wherein the through hole (4) is formed into an oxide film, nitride, and other insulating material uw. : = The through hole U 〇 is filled with a conductive material (such as a conductive metal, a conductive metal == one of a non-metal and a conductive polymer, and a combination thereof) as shown in FIG. 6F. When the conductive material is filled into the through hole (4), an extra Π3 read fine pixel is powered off _ _ lower surface (10), selected by chemical mechanical research · MP), secret engraving, plasma ship engraving, exposure, 15 1324703 The side of the method of 1 (10) removes the excess conductive material paste. In Benqin, Shao, copper, mercury, m, the conductive material may be Qin, tantalum, nickel, tin, lead, silver, tungsten, gold, lead, conductive south molecules, other conductive substances or the above group A person, an '. 夕' genus alloy is filled in the sulcus. The pixel electrode back h material ^ gold is very flexible, can be selected after grinding _ like «_ two two-step substrate and other stepping surface. How to invent the pixel electrode back junction end 116 of the pixel electrode may be selected from the lower electrode substrate 100m=bonded through the pixel (as shown in FIG. 7A) and from the upper surface 104 surface separate pixel The through holes of the substrate 100 are corresponding to each other and penetrate the German disease (as shown in the figure), and the selected slaves are deposited, and the conductive material layer is electrically connected. II: i: conductive of the electrode control module The predetermined position of the end-side bonding end m is formed on the pixel electrode (10)', wherein the sacrificial layer 118 is a sub-sacrificial layer, a germanium, a germanium, a non-gold metal material, a single ^ 116 As shown in Figures 7C and 7D. Subsequently, the two-sided bonding may be completely or partially covered on the sacrificial layer ι 8 and the second conductive material 116, and may be subsequently aligned with the rear end of the pixel electrode. The sacrificial layer 118 on the back side 116 of the electrode is first connected to form a thin 19 which can be adjusted horizontally as shown in the pixel print, such as the seventh and the ^^'. In order to increase the upper and lower level adjustment ability, the formula 8B _ specifically illustrates the pixel module of the present invention with different squares iUrtr. Such as the 8th riding, can be (10) pixel module next step or by other transfer of the name and cleaning, etc., the lower surface pre-position, the second shape = the concave Γ 2 Γ 组 group of the upper electrode substrate 250 == blue wash, etc. or l == == = 25: The upper 'definition completes the pixel upper electrode layer 251, which can simultaneously be used with the image = using the liquid crystal crystal to rotate. Subsequently, repeatable ===, heart = upper convex surface and fine curved surface, pixel upper electrode μ 26 pixel unit electrode 166, and ^= construction = HI: the optical surface is compatible with other optical lens systems, = 3 The light of the light is given to the ship, as shown in Figure 8B. Please refer to Figure 9A for the pixel module, surname, and money pole of a preferred embodiment of the present invention. The partial cross-sectional view of the control module and the difference between the modules = two = 3 cross-section schematic. This embodiment is a liquid device with a partial transmissive 6 〇 main #. As shown in the figure, the pixel module Γ 69 The magnetic cell unit electrodes 62 respectively include a ~ and a transmissive region 622. The reflective region 621 can be used as a transparent conductive material such as indium tin oxide by using a combination conductive material (4) which is expected to have good reflectivity. ( _ material, can = each reflective area 621 is located in each pixel electrode 62 v around the reflective area (four), as shown in Figure 1A. The configuration of the ring 2 reflective area 621 can also be implemented in other forms, such as transmission = 22 ::=6Γ: set, or one side of the transmissive area 622 and the reflective_pixel electrode 62, as shown in Fig. 10 The pixel electrode 62 can be formed on the pixel electrode 62 to be narrower than the barrier layer 63 on the protective layer 63. The lower surface of each pixel electrode corresponds to the second electrode pole 72 direction: 4. Forming at least a through-hole, wherein the two positions are selected in a etched manner by a fossil film and other insulating material shapes, an oxide film, a nitrogen exposure, alignment, cleaning, and firing, an electric-engraving, and a surface-engaging end 623 (as described above) In the sixth embodiment, the pixel electrode is formed on the lower surface of the pixel electrode. The transparent electrode pixel upper electrode substrate 71 can be formed into a second alignment film 74'. liquid crystal; 66 is interposed between the first-orientation film 64 of the upper electrode substrate "1324403" and the pixel upper electrode substrate 71. In addition, the upper surface of the second alignment film 74 71 and the upper electrode substrate of the pixel are imaged. The above table (4) can be separately provided - the first - polarizing layer 6 = the characteristics of the "Bay" coffee crystal == The pixel electrode control module 9{) of the present invention can be selected and fabricated by amorphous process technology, selection Integrating each pixel control display control circuit into at least one of the wafers. A semiconductor cow method selects a device such as a transistor and a pixel control circuit, wherein the transistor system includes a gate 93" and a gate electrode 95 is formed on the gate oxide layer 94. Separate. Capacitor element (4) 疋0 is formed in order from the layer %—the bottom electrode milk, the dielectric layer is read by the circuit, and then protected by the oxidized dielectric, which also has insulation and isolation. The effect of the s-insulating dielectric layer 98 is formed on the bungee 92, the source = the equal (four) thin _ bar, and then the material = such as Qin, Tong Ti, He and Ming, etc. The poles are connected to ^, 973 to form conductive paths 19 193 and 195. On the surface of the insulating dielectric layer 98 =, a conductive path 199 can also be planned to be formed, and the respective layers (4) and (4) can be repeatedly described by a single circuit line. Alternatively, the conductive traces 199 ^ conductive contacts (10)' on the surface of the insulating dielectric layer 98 may be selected and the insulating dielectric layer 198 may be overlaid on the guiding lines 199. In the insulating dielectric layer 198, it is also possible to provide a reflective 厶J 厶 162 ' and then cover the surface - the insulating dielectric layer. Among them, the control circuit can be prevented from being affected by the early aL, and the SiOZ layer __= is disturbed, and the diffused backlight module 88 in the clear-light base (10) can have various implementations. The conductive film substrate 8〇 and the other light guiding substrate 8〇 (as shown in FIG. 9) are respectively conducted to the pixel unit electrode 62 of the pixel module 60, and the lower surface of the plate 61 and the light guiding substrate 80 are selectively deposited via deposition = The steps are formed by other transfer techniques - each of the 77 pieces of the sheet with the diffused surface is self-dispersed onto the red 62. The light guide substrate 80 can be provided with a conductive inspection 82 made of a conductive material at the back surface of the pixel electrode of the corresponding pixel module, and the conductive connection 82 of the pixel electrode control module 90 is electrically connected. The point 186 and the pixel electrode back surface bonding end 62 of each of the pixel unit electrodes 62 may be provided with an insulating layer on each of the side edges of the 'electropile 82' in the above embodiment, except that the circuit S is provided to provide a guide. The protection effect of the New 82 and its surrounding components. In order to improve the light transmission effect, it is optional to use a transparent conductive material such as transparent conductive oxide material (Transparent Conducting 〇xide; exploration, such as ITO), conductive polymer, and one of the combinations to make each conductivity check 82 ° In addition, the backlight module 88 can also be formed by forming an organic ELECTR luminescent device (〇LED) between the pixel module 6 〇 and the pixel electrode control module 9 ,, and directly utilizing the The organic electro-excitation light τ is directly illuminated upward to provide a back-red light source. Further, each of the above substrates may be made of a flexible material to facilitate the production of a flexible display panel. 20, the model age is not finished, the pure combination, the combination of the pattern can be as shown in Figure A and Figure 11B. The conductive detection iJit disposed on the light guiding substrate 8b and the lower surface of the upper surface of the godet 8G are formed to form an upper $(8) and a lower pin 183, respectively. The upper pin (8) can be electrically connected to the electrode back joint end 623 of the pixel electrode substrate 61 when combined; the lower pin 183 can be electrically connected to the conductive contact (10) of the t electrode control module 9 or directly 舦 = The conductive path 199 of the preset control module 90 is electrically connected, thereby guiding the pixel unit electrode 62 and the pixel control unit of the pixel electrode control module 90 (as shown in FIG. 11A). The present invention can be used to isolate the conductive contacts 186 of the electrode-backed electrode control module 90 on the electrode back-side bonding end 4 _ layer 188 of the pixel lower electrode substrate 61, which can still be convex 4 2 The connection between the back end of the 0 1 pole skin joint end 623 and the conductive contact circuit element control _ °. In addition, the length of the back surface of the electrode connected to A 623 or the conductive connection point 186 can be directly taken, and the pixel unit electrode 62 is turned on and then the rain is turned off. Pixel control circuit of pixel fury control module 90 Please refer to the mth and 12th drawings, and the system is a partial cross-sectional view of the embodiment. The single-turn electrode reflection area 621 can still be used for hanging, and the pixel performance of the moon is unknown. Wherein, the pixel unit electrode 'the surface of the display device </ RTI> side; 88 the light illuminating object area is shot out to improve the backlight area and finally the transmission area 622. Each of the pixel unit electrode reflection regions 621 on the surface of the 132473 surface 624 is still formed into a convex surface pattern, which is precisely caused by the reflection diffusion of the four sides, and can be used for the lack of transparency of the transmission area 622, and can also be displayed between the liquid crystal display pixels. Clearance problem. At the same time, the convex surface design of the upper surface 624 can cause a slight angular shift of the liquid crystal molecules during alignment, thereby increasing the reaction speed of the liquid crystal layer 66 and improving the display quality. The surface of the transmissive region 621 and the reflective region 622 of the pixel unit 70 electrode 62 can be adjusted by using a light amount of light to adjust the optical path difference between the transparent and reflective regions or to make the transmissive electrode region 621 and The difference in thickness of the reflective electrode region 622 is to achieve the effect of compensating for the optical path difference. «Monthly, reference to Figs. 13A to 13B' is a partial cross-sectional schematic view of another embodiment of the present invention. If _ no' its main structure is fresh 9A, 9BWK shows that the real side is roughly the same. However, the actual (the fourth) is made to - the transmission is slightly different, so the structure of the pixel electrode control 90 and the back group 88 are not edited, and the pixel unit electrode 36 is made of a transparent conductive material (such as 'system The present invention is a partial cross-sectional view of another embodiment of the present invention. As shown in the figure, the embodiment of the present invention is a technique of the present invention - the reflection; the crystal shows the main structural sentence of the winter. Main ku Γ* Λ Λ —
請參閱第14圖 22 丄JZ4/U3 收月t·力之材貝製作’藉以遮蔽或吸收漫射光，防止漫射光碰撞 ^路^件而使電路受到干擾。當像素單元 562系以透明導 电材貝（如ITO)製作時，下電極基板561應選擇爲透明之材 質，而反射層162則應以具有良好反射能力之材質製作，藉以 提供反射光線之效果。 曰 請參閱第15A圖，係本發明再一實施例之局部剖面示意圖。 如圖所示’其主要構造大致與第9A圖所示實施例相同，惟領示 面板中液晶像素模組6〇部分以一場發射模組咖取代，即可形 成一系統場發射顯示裝置（field emissi〇n display. fed)。‘ 場發射模組_主要係於像素基板撕之各像钱極上= ^形成-具複數個發射尖端(tipemitter)之場發射層咖和像 ^電極背面接合端655 ;場發射層606上方-預設距離設有一 ]明基板660;該透明基板66〇之下表面設有_透明電極643; 透明電極643下表面設有對應於像素電極6〇2與場發射層嶋 個螢光層645 ;各像錢極㈣與對應之場發射層曰_、 螢先層645分取-隔離壁612與其相鄰之單位加以隔離。 德本ϋ用像素電極控麵組⑽中之像素控制電晶體驅動對應的 ，素電極602 ’可使該像素電極與透明電極⑽之間所形 iii場，令由場發射層咖發射尖端射出之電子加速而碰撞 螢光層645，使之發出相應的光線。 凊參閱第15B圖，係本發明再一實施例之局部剖面示 =:示’其主要構造大致與第9A_示實施例相同，惟顯示 板中液晶像素她6〇部分以一微機電光攔調變模組彻取 主^可軸—微機電顯示裝置。該微機電光_變模組700 要係於像素基板701之各像素光欄調變單元7〇2上分別包括 23 1324703 形成有一反射鏡片層706、反射鏡片層之聯接控制層755、支撐 層757、導電線路層758和各元件間之鏈接元件(末標示）；= 各像素光攔調變單元702上方尚可設有一透明保護基板76〇 , 並可選擇結合另-支持層和黏著層接合該像素基板則。利用 像素電極控制模組90中之像素控制電晶體經由像素單元電性 連接端765鶴對應的各像素光侧變單元7〇2之反射鏡片層 雇’可使該各像素反射鏡片層雇可上、下自由調變位移^ 以調變入射光之明亮度使之具有顯示之功能。 像素電極控麵組90與像素模组56〇間之組合態樣系可如 圖所示。其中，系可令該像素電極控制模組 HI 86凸出於該模組之上表面，藉以與插人下電 ίϋΓ反S k上對應之像素單元電極562電性連接（如第16A 眢而妓人夕尚可於各像素單元電極562中所設置之像素電極 絕緣im3 ’該，背面接合端523之側邊周緣尚可各一 561 ^下表面^電面接合端523之一端凸出於下電極基板 性像素電極控制。可卿_接_電 q〇 、、之&電接點586或直接與該像素電極控 ^組^所預設規劃之導電路㈣電性連接，藉此而導通像 (如第1=2肖·m㈣電路元件 所示，本發日本發明又一實施例之剖面示意圖。如圖 模:制模組90之驅動及控制而可利用像素 一步提升顯二置630將顯示影像之加以放大，進 政月b。再者，本實施例尚可將像素模組60 24 :像域表面製作成一預設之光學曲面668(可為下凹曲 透b日及其他曲折之球面或非球面）如第8Β圖，可配合 呈現更完美的成像效果。 所示％:::二本發明又一實施例之剖面示意圖。如圖 製她r:: : 一以半導體、多晶矽及非晶矽等 衣之第一像素電極控制模組390。其中，各像辛带 ==及_可以上述相同之原理於其表面形』 而第二像素電極控制模組_㈣應於各導電 與導電接形成一導電接點386’利用導電接腳983 藉以提供iin連接’可料同功能之控麵組加以結合， 稭以k供顯不裝置更強大而多樣化的功能。 例之^^第進圖至第⑽圖，係分別為本發明—較佳實施 面示意圖、電性轉接基板之局部剖面示意圖及像素 電極控她組之局部剖面示意圖。如圖所示，其主要係包含有 電性連接模组侧及―像素電極控_組 極可依上軸同謂造方式於像素電 極基板之各像素電極462所對應之下表面預設位置形成至 >、-個像素電極背面導電端463。該像素電 設保護層棚、-第_定向膜464、—液晶層466了 ^ =向膜474、-透明電極472 '一透明基板471及一偏光層 475 ’以建構成一像素模組460。 、該電性連接模組420系為可於電性連接基板421上表面似 分別對應於各別像素電極背面導電端463之預設位置，藉由選 擇各類半導體、非轉、他夕、單抑、騎神技^、穿 孔技術、祕驗、填紐術及其巾德合方狀—等製程技 25 421内部，mm合端423 ’尚可於電性連接基板 425之其卿電路&幻，電通路 可設計凸出於電性連接基板下表面427:=端尚 抱。可使各像素電極426分別藉以一導電接==接=端 :轉接基板下表_之預設位置之導^ 像素電極控麵 I成制晶片之中或藉由整-二= 素二上’可選擇製作像 r、導電通路—以中絕=制2 電通路和導電接合端電性連接至像素模組働 = 4=即可形成-主動式驅動之像素電極陣列。配合上 =:_極::_，=數= 降低生產成本之二f可提高顯示效能並有效 s青參閱第19D圖，係本讲明帝料、垂&好 ㈣ϋ向 連接基板另一實施態樣之 局挪面心圖。如圖所示，該電性連接基板441上表面桃 26 1324703 分別對應於各別像素電極背面導電 上述相同製程技術，設置形成!設位置，可藉由 或導電通路接合榫(未標示），可:=^導電接合請 背面位置設有一至少穿孔，再於各穿孔 形成導電通路446。然後於該電性連接基板44ι 成一該導電通路446之控制電路449，彳 夕 到轉接電性連接基板44i之預設:^導電通路碰連接 點445相連接。此外，尚可增設 二:別與f應之導電接 制電路449,藉以提供保護之曰作用。…曰48覆蓋該圖案化控 另外’本發明之轉接基板尚可以且可 材質製作，而導電通路則可選 導带 exibie)之 質、導雷奋屬道步办入研 導电间分子、透明導電材 二等導電金屬合金及其中之組合式之 盆導電接胃触顯示面板之製作。各實施例中， 其導電接點係可於製作導電觀時，令1 峨，物通路^ 電極控制模組晶片或晶片模組電性連接 雕=面積之像細組，.大尺寸齡面板之製作。 技術都已、多晶矽及非晶矽等製程技術與各類顯示 组、背藉由本發明所提供之技術’可使像素模 令n且電性連接模組及像素電極控制模組可分別f作 二：=性接合技術選擇加以結合，依據上述= / 77彻業魏有之麟，補可提高生產良率 且可_彳程降低成本，實爲業者及廣大消費 综上所述，畲知本發明系有關於一麵示裝置，尤指—種 27 1324703 可降低製作成本’提高産品效能之顯示裝置，其主要系可選擇 於像素模組之下電極基板及f光模組導絲或發光元件上之預 設=置各設置-導電接合端，藉由該導電接合端或其他電性連 ，模組，電性連接至像素電極控制模組上之導電接合端，可提 间產良率及降低生產成本者。故本發明實爲—富有新顆性、 ，步f生’及可供産業利用功效者，應符合專利申請要件無疑，Please refer to Figure 14 丄JZ4/U3 收月 t·力之材贝制作' by means of shielding or absorbing diffused light to prevent the diffused light from colliding with the circuit and causing interference to the circuit. When the pixel unit 562 is made of a transparent conductive material shell (such as ITO), the lower electrode substrate 561 should be selected as a transparent material, and the reflective layer 162 should be made of a material having good reflection ability, thereby providing the effect of reflecting light. .曰 Referring to Figure 15A, a partial cross-sectional view of still another embodiment of the present invention. As shown in the figure, the main structure is substantially the same as the embodiment shown in FIG. 9A. However, the liquid crystal pixel module 6〇 portion of the panel is replaced by a field emission module, thereby forming a system field emission display device (field). Emissi〇n display. fed). The field emission module _ is mainly on the pixel pole of the pixel substrate tearing = ^ formation - a field emission layer with a plurality of tip tips and a cathode back junction 655; the field emission layer 606 above - pre a transparent substrate 660 is disposed on the lower surface of the transparent substrate 66; a transparent electrode 643 is disposed on the lower surface of the transparent substrate 66; and a fluorescent layer 645 corresponding to the pixel electrode 6〇2 and the field emission layer is disposed on the lower surface of the transparent electrode 643; Like the money pole (four) and the corresponding field emission layer 曰 _, the first layer 645 of the first layer - the partition wall 612 is isolated from its adjacent unit. Deben is driven by a pixel control transistor in the pixel electrode control panel (10), and the pixel electrode 602' can form a field iii between the pixel electrode and the transparent electrode (10), so that the field emission layer emits a tip. The electrons accelerate and collide with the phosphor layer 645 to emit a corresponding light. Referring to FIG. 15B, a partial cross-sectional view of another embodiment of the present invention shows that the main structure is substantially the same as that of the embodiment of the ninth embodiment, but that the liquid crystal pixel in the display panel is a MEMS block. The modulation module takes the main axis-micro-electromechanical display device. The micro-electromechanical light-modulation module 700 is to be attached to each of the pixel light-area modulation units 7〇2 of the pixel substrate 701, respectively. 23 1324703 is formed with a reflective lens layer 706, a coupling control layer 755 of the reflective lens layer, and a support layer 757. a conductive circuit layer 758 and a linking element between the components (not shown); = a transparent protective substrate 76 上方 may be disposed above each of the pixel light blocking modulation units 702, and may be bonded to the other supporting layer and the adhesive layer. The pixel substrate is then. The pixel control transistor in the pixel electrode control module 90 can be used to move the reflective lens layer of each of the pixel light side changing units 7〇2 corresponding to the pixel unit electrical connection end 765. The lower free shifting displacement ^ is used to modulate the brightness of the incident light to provide a display function. The combination of the pixel electrode control panel 90 and the pixel module 56 can be as shown. The pixel electrode control module HI 86 is protruded from the upper surface of the module, so as to be electrically connected to the pixel unit electrode 562 corresponding to the input voltage (for example, the 16A). The pixel electrode insulation provided in each pixel unit electrode 562 may be im3', and the side edges of the back joint end 523 may each have a 561 ^ lower surface. One end of the electrical surface joint end 523 protrudes from the lower electrode. The substrate pixel electrode control can be electrically connected to the pixel circuit 586 or directly connected to the pixel electrode control group (4), thereby guiding the image (After the 1st=2 xiao·m(4) circuit component, a schematic cross-sectional view of another embodiment of the present invention of the present invention. As shown in the figure: the driving and control of the module 90 can be improved by using the pixel to increase the display 630. The image is enlarged and entered into the government month b. Furthermore, in this embodiment, the pixel module 60 24 : the image field surface can be made into a predetermined optical curved surface 668 (which can be a concave curved b-day and other tortuous spherical surfaces) Or aspherical, as shown in Figure 8, can be used to present a more perfect imaging effect. A: FIG. 2 is a schematic cross-sectional view of another embodiment of the present invention. The first pixel electrode control module 390 is a semiconductor, polycrystalline germanium, and amorphous germanium. The second pixel electrode control module _(4) should form a conductive contact 386' with conductive pins 983 to provide an iin connection by using the same principle as above. The combination of the control panel with the function is used to provide a more powerful and diversified function for the device. The example of the figure is shown in the figure to the figure (10), which are respectively the invention. A partial cross-sectional view of the substrate and a partial cross-section of the pixel electrode control group. As shown in the figure, the main part includes the electrical connection module side and the "pixel electrode control _ group electrode can be fabricated according to the same axis. The method is formed on the surface of the pixel electrode substrate 462 corresponding to the lower surface of the pixel electrode substrate 462 to the front surface of the pixel electrode 463. The pixel electrode is provided with a protective layer shed, a _ directional film 464, a liquid crystal layer 466. ^ = to film 474, - transparent electrode 472 ' The transparent substrate 471 and a polarizing layer 475 ′ are configured to form a pixel module 460. The electrical connection module 420 is electrically connectable to the substrate 421 and corresponds to the respective pixel electrode back conductive end 463. Preset position, by selecting various types of semiconductors, non-transfers, eves, singles, riding techniques, perforation techniques, secrets, refills, and their methods. 25 421 internal, mm The junction end 423' can still be electrically connected to the substrate 425. The electrical path can be designed to protrude from the lower surface 427 of the electrical connection substrate: the end is still held. Each of the pixel electrodes 426 can be electrically conductive. Connect == connect = end: transfer substrate the following table _ the preset position of the guide ^ pixel electrode control surface I into the wafer or by the whole - two = prime on the 'optional r, conductive path - An active-driven pixel electrode array can be formed by electrically connecting the electrical path and the conductive bonding end to the pixel module 働=4=. Matching =:_ pole::_, = number = lowering the production cost of the second f can improve the display performance and effective s green see the 19D picture, this is the description of the emperor, vertical & good (four) ϋ to the connection substrate another implementation state The bureau of the kind is like a face. As shown in the figure, the upper surface of the electrical connection substrate 441, the peach 26 1324703, is respectively corresponding to the same process technology of the back surface of the respective pixel electrode, and is disposed to form a location, which can be joined by a conductive path (not labeled). :=^ Conductive joints are provided with at least a perforation at the back position, and a conductive path 446 is formed in each of the perforations. Then, the control circuit 449 of the conductive via 446 is formed on the electrical connection substrate 44, and the preset connection of the electrical connection substrate 44i is connected to the connection point 445. In addition, it is also possible to add two: the conductive connection circuit 449, which should be combined with the f, to provide protection. ...曰48 covers the pattern control. In addition, the transfer substrate of the present invention can be made of materials, and the conductive path can be made of exibie. The production of a transparent conductive material, a second-conducting metal alloy, and a combination of the pot-shaped conductive gastric touch display panels. In each of the embodiments, the conductive contacts can be used to make a conductive view, such as 1 峨, the material path ^ electrode control module wafer or the chip module is electrically connected to the image of the area. Production. Technology, polycrystalline germanium and amorphous germanium process technology and various display groups, and the technology provided by the present invention can enable the pixel module n and the electrical connection module and the pixel electrode control module to be respectively := Sexual joint technology choices are combined, according to the above = / 77, the industry has Wei Lin, supplement can improve the production yield and can reduce the cost, the actual industry and the vast consumption of the above, I know the invention There is a display device for one side, especially a type of 13 1324703 which can reduce the manufacturing cost and improve the performance of the product. The main selection device can be selected from the electrode substrate under the pixel module and the guide wire or the light-emitting element of the f-light module. Preset=setting each setting-conductive joint end, through the conductive joint or other electrical connection, the module is electrically connected to the conductive joint end on the pixel electrode control module, which can improve the yield and reduce the yield Production cost. Therefore, the present invention is indeed a new one, and a person who is capable of utilizing the industry, and should meet the requirements of the patent application.
，依法提請發明專利申請，懇請貴審查委員早日賜予本 專利，實感德便。 X 惟以上所述者’僅為本發明之—較佳實關而已，並非用來 限定本發明實施之顧，即凡依本發对請專鄕圍所述之形In accordance with the law, the invention patent application is filed, and the examination committee is requested to give this patent as soon as possible. X is only the above-mentioned ones, which are only for the purpose of the present invention, and are not intended to limit the implementation of the present invention.
狀 '構造、特徵及精神所為之均等變化與修飾，均應包括於标 明之申請專利範圍内。 X 【圖式簡單說明】 松有關本發明之特色、觀點及其優點將於下述說明、專利申請 靶圍、及圖示中詳加說明以利了解： 月 (一）圖式簡單說明： ί 液晶顯示面板元件之像素局部平面示意圖； 第2Α R .r 關師板元件之像素局棘面示意圖； 圖.係習用部份反射和部份穿透液晶顯示面板之局部剖面 構造示意圖； 第2B圖j制反射式半導體液晶顯示構造之局部剖面構造示 意圖； 第4八圖4(^用主動式錢發光二極體_構造之局部截面圖； 圖：係本發明像素歓之下電極基板之轉圖和^份 28 Π24703 放大圖； 第 f係'本發明像素模組之上電極基板之示意圖和部份 放大圖； ί ί本發明像素模組之製造流程之截面示意圖； 二#係特糊示本發明之像素電極背面接合端不同方 ^ 式建構之實施例之示意圖； 弟關圖丄係闡示本發明之像素模叙不同方式建構 不意圖； 第9Α 9Β:去:本發明:較佳實施例之像素模組、背光模組、 人二.極控制杈組之局部剖面禾意圖及模組間不同結 5恶樣之局部剖面示意圖； 第舰〜=圖閣示本發明之像素電極不同方式建構實施例 第11Α〜1 =圖^闡示本發明之各模組間之組合態樣系實施例 <不思圖； Φ 第12Α 12β圖··係闡示本發 局部剖面彻；像素早^極州實施態樣之 第心⑽圖：_示本發明另—實施例 第㈣：係闡示本發明又一實施例之局部剖面= 面不思圖， 第阶_ :.係閣示本發明再一實施例之局^面圖示 第16Α〜16Β圖.侧示本發明之模組間不同結 ^ 面示意圖； 〜、樣之局部剖 第17圖：係闡示本發明又—實施例之剖面示. 第18圖：係闡示本發明再—實施例 發明·轉接基板之局部剖面示意圖 29 1324703 及像素電極控制模組之局部剖面示意圖。 【主要元件符號說明】 (二）圖號簡單說明：Equal changes and modifications to the structure, characteristics and spirit of the form shall be included in the scope of the patent application indicated. X [Simple Description of the Drawings] The characteristics, viewpoints and advantages of the present invention will be explained in detail in the following description, patent application target, and illustrations: Moon (1) Schematic description: ί A schematic diagram of a partial planar view of a pixel of a liquid crystal display panel component; a pixel diagram of a pixel region of a component of a panel of the second panel; Fig. 2 is a partial cross-sectional structural diagram of a partially reflective and partially penetrating liquid crystal display panel; A schematic view of a partial cross-sectional structure of a reflective semiconductor liquid crystal display structure; a partial cross-sectional view of a structure of an active-type light-emitting diode _; FIG. 4 is a diagram of an electrode substrate under the pixel 本 of the present invention And the parts 28 Π 24703 enlarged view; the f-th schematic view and partial enlarged view of the electrode substrate of the pixel module of the present invention; ί ί cross-sectional schematic diagram of the manufacturing process of the pixel module of the present invention; The schematic diagram of the embodiment of the pixel electrode back junction end of the invention is different; the brother diagram illustrates the different ways of constructing the pixel pattern of the present invention; 9: 9Β: go: the invention: Partial cross-section of the pixel module, the backlight module, the human two-pole control group, and the partial cross-section of the different samples between the modules; the ship ~= Figure shows that the pixel electrode of the present invention is different MODE STRUCTURAL EMBODIMENT EMBODIMENT 11 Α 1 = Figure 2 illustrates a combination of embodiments of the modules of the present invention <not thinking; Φ 12th 12β diagram···················· The first embodiment of the invention is shown in the first section: BRIEF DESCRIPTION OF THE DRAWINGS FIG. 16 is a cross-sectional view showing a different aspect of the module of the present invention; FIG. 17 is a partial cross-sectional view of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 18 is a partial cross-sectional view showing a partial cross-sectional view of a transfer substrate of a second embodiment of the present invention. FIG. 1324703 and a pixel electrode control module. [Explanation of main component symbols] (II) Simple description:
131 閘導線 133 資料線 139 薄膜電晶體 134 源電極 135汲極電極 132 閘電極 137像素電極 10 玻璃基板 14 薄膜電晶體 12 像素電極 15 儲存電容 17 透明基板 13 液晶層 136接觸孔 123 透明電極 20 玻璃基板 22 像素電極 21 介電層 25 反射部份 26 穿透部份 23 液晶層 24 透明電極 27 透明基板 28 背光模組 30 半導體基板 32 電容 31 像素開關電晶體 33 隔離層 34 絕緣層 35 導電栓 36 導電路線 37 絕緣層 38 導電路線 39 光遮蔽層 40 絕緣層 49 像素電極 46 保護層 43 液晶層 45 定向膜 47 定向膜 48 透明電極 42 透明基板 30 1324703131 gate wire 133 data line 139 thin film transistor 134 source electrode 135 drain electrode 132 gate electrode 137 pixel electrode 10 glass substrate 14 thin film transistor 12 pixel electrode 15 storage capacitor 17 transparent substrate 13 liquid crystal layer 136 contact hole 123 transparent electrode 20 glass Substrate 22 Pixel electrode 21 Dielectric layer 25 Reflecting portion 26 Penetrating portion 23 Liquid crystal layer 24 Transparent electrode 27 Transparent substrate 28 Backlight module 30 Semiconductor substrate 32 Capacitor 31 Pixel switching transistor 33 Isolation layer 34 Insulation layer 35 Conductive plug 36 Conductive path 37 insulating layer 38 conductive path 39 light shielding layer 40 insulating layer 49 pixel electrode 46 protective layer 43 liquid crystal layer 45 orientation film 47 orientation film 48 transparent electrode 42 transparent substrate 30 1324703
50玻離基板 52 閘電極 51像素驅動薄膜電晶體 53 介電絕緣層 54有機電激發光二極體像素 55 導電栓 56 導電路線 57 介電絕緣層 58 導電路線 59 陽電極層 540有機電激發光介質層 542 保護層 541陰電極層 100像素下電極基板 101 像素顯示元件 102分割區域 104 液晶填充口 103像素單元顯示區域 105 凹槽 108像素下電極基板下表面 106 像素單元電極 117接合層 200像素上電極基板 201 像素上電極層 202分割區域 207 凸起部 208像素上電極基板上表面 107 凹起部 209凹槽底部 110貫穿孔 112 絕緣材料 113導電材料層 118 犧牲層 116像素電極背面接合端 119 空間 150像素模組下電極基板 156 像素單元電極 116像素電極背面接合端 250像素模組上電極基板 255 凹槽 251像素上電極層 268 光學曲面 188像素電極背面接合端 166 像素單元電極 178像素電極背面接合端 261 像素上電極層 31 1324703 60像素模組 61像素下電極基板 69像素單元電極區間 62像素單元電極 621反射區 622透射區 63保護層 64定向膜 623像素電極背面接合端 71像素上電極基板 72透明電極 74定向膜 66液晶層 75偏光層 65偏光層 90像素電極控制模組 91半導體基板 92汲極 93 源極 94閘極氧化層 95 閘電極 96 元件隔離層 971底電極 972介電層 973上電極 98絕緣介電層 191 導電通路 193導電通路 195 導電通路 199導電路線 298絕緣介電層 186 導電接點 80導光基板 81 漫射表面 88背光模組 77發光元件 82導電栓 85絕緣層 181上接腳 188絕緣層 183下接腳 625下表面 624上表面 360像素模組 362像素單元電極 560像素模組 562像素單元電極 32 162反射層 586導電接點 585絕緣層 599導電路線 600場發射模組 602像素電極 660透明基板 645榮光層 630透鏡組 390像素電極控制模組 386導電接點 420電性連接模組 49〇像素電極控制模組 463像素電極背面導電端 464定向膜 474定向膜 471透明基板 421電性連接基板 423導電通路 427下表面 426像素電極 492像素控制電路元件 442上表面 443像素電導電接合墊 449控制電路 561下電極基板 523電極背面接合端 583導電接腳 像素基板 606場發射層 643透明電極 612 隔離壁 668光學曲面 983導電接腳 460像素模組 461像素電極基板 462像素電極 469保護層 466液晶層 472透明電極 475偏光層 424上表面 425導電通路 428導電接合端 491像素電極控制基板 441電性連接基板 447下表面 446導電通路 445導電接點 33 1324703 448保護層 700微機電光欄調變模組 701 702像素光欄調變單元 706 755聯接控制層 757 758導電線路層 760 765像素單元電性連接端 像素基板 反射鏡片層 支撐層 透明保護基板 3450 glass-ion substrate 52 gate electrode 51 pixel drive thin film transistor 53 dielectric insulating layer 54 organic electroluminescent diode lens 55 conductive plug 56 conductive path 57 dielectric insulating layer 58 conductive path 59 anode layer 540 organic electro-excitation optical medium Layer 542 Protective layer 541 cathode electrode layer 100 pixel lower electrode substrate 101 pixel display element 102 divided region 104 liquid crystal filling port 103 pixel unit display region 105 groove 108 pixel lower electrode substrate lower surface 106 pixel unit electrode 117 bonding layer 200 pixel upper electrode Substrate 201 pixel upper electrode layer 202 divided region 207 raised portion 208 pixel upper electrode substrate upper surface 107 recessed portion 209 groove bottom portion 110 through hole 112 insulating material 113 conductive material layer 118 sacrificial layer 116 pixel electrode back joint end 119 space 150 Pixel module lower electrode substrate 156 pixel unit electrode 116 pixel electrode back junction end 250 pixel module upper electrode substrate 255 groove 251 pixel upper electrode layer 268 optical curved surface 188 pixel electrode back junction end 166 pixel unit electrode 178 pixel electrode back junction end 261 pixel upper electrode layer 31 1324703 60 pixel module 61 pixel lower electrode substrate 69 pixel unit electrode section 62 pixel unit electrode 621 reflection area 622 transmission area 63 protective layer 64 orientation film 623 pixel electrode back junction end 71 pixel upper electrode substrate 72 transparent electrode 74 orientation film 66 Liquid crystal layer 75 polarizing layer 65 polarizing layer 90 pixel electrode control module 91 semiconductor substrate 92 drain 93 source 94 gate oxide layer 95 gate electrode 96 element isolation layer 971 bottom electrode 972 dielectric layer 973 upper electrode 98 insulating dielectric layer 191 conductive path 193 conductive path 195 conductive path 199 conductive path 298 insulating dielectric layer 186 conductive contact 80 light guiding substrate 81 diffusing surface 88 backlight module 77 light emitting element 82 conductive plug 85 insulating layer 181 upper pin 188 insulating layer 183 Lower pin 625 lower surface 624 upper surface 360 pixel module 362 pixel unit electrode 560 pixel module 562 pixel unit electrode 32 162 reflective layer 586 conductive contact 585 insulating layer 599 conductive path 600 field emission module 602 pixel electrode 660 transparent substrate 645 glory layer 630 lens group 390 pixel electrode control module 386 conductive contact 420 electrical connection module 49 image Electrode control module 463 pixel electrode back conductive end 464 orientation film 474 orientation film 471 transparent substrate 421 electrically connected substrate 423 conductive path 427 lower surface 426 pixel electrode 492 pixel control circuit element 442 upper surface 443 pixel electrical conductive pad 449 control circuit 561 lower electrode substrate 523 electrode back junction end 583 conductive pin pixel substrate 606 field emission layer 643 transparent electrode 612 isolation wall 668 optical surface 983 conductive pin 460 pixel module 461 pixel electrode substrate 462 pixel electrode 469 protective layer 466 liquid crystal layer 472 Transparent electrode 475 polarizing layer 424 upper surface 425 conductive path 428 conductive joint end 491 pixel electrode control substrate 441 electrically connected substrate 447 lower surface 446 conductive path 445 conductive contact 33 1324703 448 protective layer 700 MEMS diaphragm modulation module 701 702 pixel light bar modulation unit 706 755 connection control layer 757 758 conductive circuit layer 760 765 pixel unit electrical connection end pixel substrate reflective lens layer support layer transparent protection substrate 34
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94103132A TWI324703B (en) | 2005-02-01 | 2005-02-01 | Modulized display device and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94103132A TWI324703B (en) | 2005-02-01 | 2005-02-01 | Modulized display device and fabrication method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200628944A TW200628944A (en) | 2006-08-16 |
| TWI324703B true TWI324703B (en) | 2010-05-11 |
Family
ID=45074193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94103132A TWI324703B (en) | 2005-02-01 | 2005-02-01 | Modulized display device and fabrication method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI324703B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018126786A1 (en) * | 2017-01-04 | 2018-07-12 | 曾世宪 | Pixel unit, pixel array, multimedia device and manufacturing method thereof |
-
2005
- 2005-02-01 TW TW94103132A patent/TWI324703B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018126786A1 (en) * | 2017-01-04 | 2018-07-12 | 曾世宪 | Pixel unit, pixel array, multimedia device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200628944A (en) | 2006-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104885252B (en) | Organic light emitting display device and method for manufacturing the same | |
| CN104517995B (en) | Organic light-emitting display device and its manufacturing method | |
| TWI267684B (en) | In-plane switching mode liquid crystal display device and fabrication method thereof | |
| CN103582948B (en) | Apparatus for displaying and sensing images | |
| TWI282958B (en) | Pixel element substrate, display device, electronic device, and method for manufacturing the pixel element substrate | |
| CN106062858B (en) | Use the display equipment of light emitting semiconductor device | |
| CN102331638B (en) | Liquid crystal display | |
| CN108269833A (en) | Organic light-emitting display device | |
| CN103296038B (en) | Imaging sensor | |
| CN110024484A (en) | Use the display device and its manufacturing method of light emitting semiconductor device | |
| CN107994036A (en) | Substrate and preparation method thereof, display panel, display device | |
| CN108369787A (en) | Display device | |
| CN104393001B (en) | Thin-film transistor array base-plate and preparation method thereof, display device | |
| CN109031779A (en) | Light emitting diode base plate, backlight module and display device | |
| TW200522344A (en) | Solid-state imaging device and method of manufacturing solid-state imaging device | |
| TWI374544B (en) | Thin film transistor array substrates and fbricating method thereof | |
| TW200415402A (en) | Display device and electronic equipment | |
| TW201037665A (en) | Chiplet driver pairs for two-dimensional display | |
| TWI771454B (en) | Optoelectronic device and method of controlling such optoelectronic device | |
| CN108022947A (en) | Organic light-emitting display device and its manufacture method | |
| TWI293397B (en) | Liquid crystal display unit having pixel electrode encircled with partition wall and process for fabrication thereof | |
| TW200528887A (en) | Pixel structure and fabricating method thereof | |
| CN109979969A (en) | The method of miniscope and manufacture miniscope | |
| TW200527661A (en) | Image sensor and method of manufacturing the same | |
| CN109997230A (en) | Pixel unit and its manufacturing method and double-sided OLED display device |