CN104752240A - 接合银浆的方法 - Google Patents

接合银浆的方法 Download PDF

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CN104752240A
CN104752240A CN201410432816.1A CN201410432816A CN104752240A CN 104752240 A CN104752240 A CN 104752240A CN 201410432816 A CN201410432816 A CN 201410432816A CN 104752240 A CN104752240 A CN 104752240A
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silver
dielectric material
silver powder
phase sintering
sintering dielectric
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洪坰国
姜修槟
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Hyundai Motor Co
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Hyundai Motor Co
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Abstract

本发明提供一种接合银浆的方法，其包括制备包含多个银粉末和能够环绕各个银粉末的固相烧结介质材料的银浆。此外，该方法包括在大于大气压水平的氧分压下加热银浆，以及接合银粉末。

Description

接合银浆的方法
相关申请的交叉引用
本申请要求2013年12月30日提交到韩国知识产权局的韩国专利申请第10-2013-0167818号的优先权和权益，其全部内容并入本文以供参考。
技术领域
本发明涉及接合银浆的方法。更具体地，本发明提供用于接合半导体装置的银浆接合方法。
背景技术
根据应用设备的尺寸和容量近来变大的趋势，对具有高击穿电压、高电流和高速开关特性的电力用半导体装置的需求持续增加。在半导体装置当中，碳化硅(SiC)半导体装置可具有优点。例如，由于碳化硅半导体装置比常规的硅(Si)半导体装置具有更宽的带隙，因此可在高温更稳定地实施半导体特性。
然而，在升高的温度可能额外地需要稳定地应用包装材料，以获得相当高温的操作效果。特别地，由于用于接合半导体装置的常规焊料具有小于约230℃的熔融温度，所以焊料无法在可应用和操作碳化硅半导体装置的约250℃或更高的接合温度使用。
近来，已提出包括金(Au)等的高温焊料作为替代物以代替当前的焊料，但已经报道高温焊料可能更昂贵并可能具有降低的特性例如接合强度。
上述在该背景技术部分公开的信息仅用于增强对本发明背景的理解，因此其可能含有不构成在该国本领域普通技术人员已经知晓的现有技术的信息。
发明内容
本发明提供接合银浆而无需加热至银熔点的方法。
在本发明的示例性实施方式中，接合银浆的方法可包括：制备包括多个银粉末和能够环绕各个银粉末的固相烧结介质材料的银浆；在大于大气氧分压的氧分压下加热银浆；以及接合银粉末。
加热银浆的步骤可在约250℃至约900℃的温度执行。氧分压可大于0.21，且等于或小于约1。烧结介质材料可为但不限于玻璃粉(glassfrit)。加热银浆的步骤可包括将固相烧结介质材料转化为液相烧结介质材料。
在示例性实施方式中，接合银粉末的步骤可包括：使环绕各个银粉末表面的液相烧结介质材料与邻近的液相烧结介质材料接触；以及使银粉末的银原子和银离子通过液相烧结介质材料扩散以形成将银粉末彼此接合的接合部。在接合银粉末的步骤中，可去除液相烧结介质材料。
如上所述，根据本发明的各个示例性实施方式，加热银浆的步骤可在大于大气氧分压的氧分压下执行以接合银浆。
附图说明
根据以下具体实施方式并结合附图，将更加清楚地理解本发明的上述和其它目的、特征和优点。图1至图4为依次示出根据本发明示例性实施方式的银浆接合方法的视图。
图1示出根据本发明示例性实施方式的包括银粉末100和环绕银粉末100的固相烧结介质材料200的银浆的示例性状态；
图2示出根据本发明示例性实施方式的银浆的示例性状态，其中银浆被加热并且环绕银粉末的液相烧结介质材料210与环绕其他银粉末的邻近液相烧结介质材料210接触；
图3示出根据本发明示例性实施方式的在由液相烧结介质材料210环绕的银粉末100之间形成接合部110的银浆的示例性状态；且
图4示出根据本发明示例性实施方式的银粉末100通过接合部接合而液相烧结介质材料被完全去除的银浆的示例性状态。
图1-4中示出的附图标记包括对下面进一步讨论的以下元件的参照：
100：银粉末
110：接合部
200：固相烧结介质材料
210：液相烧结介质材料
具体实施方式
本文使用的术语仅仅是为了说明具体实施方式的目的而不是意在限制本发明。如本文所使用的，单数形式“一个、一种”和“该”也意在包括复数形式，除非上下文中清楚指明。还可以理解的是，在说明书中使用的术语“包括”和/或“包含”是指存在所述特征、整数、步骤、操作、元件和/或部件，但是不排除存在或添加一个或多个其它特征、整数、步骤、操作、元件、部件和/或其群组。如本文所使用的，术语“和/或”包括一个或多个相关所列项目的任何和所有组合。
除非特别说明或从上下文明显得到，否则本文所用的术语“约”理解为在本领域的正常容许范围内，例如在均值的2个标准偏差内。“约”可以理解为在所述数值的10％、9％、8％、7％、6％、5％、4％、3％、2％、1％、0.5％、0.1％、0.05％或0.01％内。除非另外从上下文清楚得到，本文提供的所有数值都由术语“约”修饰。
将参考附图详细地说明本发明的示例性实施方式。如本领域技术人员将理解，所描述的实施方式可以在不偏离本发明的主旨或范围的情况下以各种不同的方式修改。相反，本文引入的示例性实施方式提供成使得所公开的内容彻底和完全并且将本发明的主旨充分地传达给本领域技术人员。
在附图中，为了清楚，层厚、膜、板、区域等放大。应理解，当层被称为在另一层或基板“上”时，其可以直接在另一层或基板上，或存在介入层。相同的附图标记在整个说明书中表示相同的元件。
根据本发明示例性实施方式，银浆可包括银粉末100和烧结介质材料200，并且烧结介质材料200能够环绕银粉末100的表面。具体地，烧结介质材料200可为但不限于玻璃粉。碳化硅(SiC)半导体装置可使用银浆接合。当接合半导体装置时，银浆可形成在接合目标的半导体装置上，且半导体装置可通过将银浆与银浆接合而接合。随后，当将银浆与银浆接合时，可接合碳化硅半导体装置。
在下文中，将在各个示例性实施方式中描述银浆的接合方法。图1至图4依次示出根据本发明示例性实施方式的银浆接合方法。
在图1中，可制备银浆。银浆可包括银粉末100和烧结介质材料200。烧结介质材料200可为固相，并能够环绕银粉末100的表面。在示例性实施方式中，银粉末可为颗粒的形式。银粉末100的直径可在约1μm至约10μm的范围内。
在图2中，可加热包括银粉末100和烧结介质材料210的银浆。加热温度可在约250℃至约960℃的范围内。加热银浆的步骤可在大气压下执行，并可在氧(O2)分压大于大气氧分压的状态下执行。具体地，氧分压可大于约0.21，且等于或小于约1。当加热银浆时，固相烧结介质材料200可熔融并转化为液相烧结介质材料210。由于银的熔融温度为约962℃，因此银粉末100的粉末状态即使在银浆被加热时也可得到保持。此外，在液相烧结介质材料210与粉末状态的银粉末100之间不会发生化学反应。随后，环绕银粉末100表面的液相烧结介质材料210可与邻近的液相烧结介质材料210彼此接近并接触，且环绕银粉末100的液相烧结介质材料210可直接彼此接触。此外，银粉末100的银原子和银离子(Ag+)可通过液相烧结介质材料210扩散。
在图3中，随着银浆加热的进行，银粉末100的银原子和银离子的扩散可被活化，以形成可接合银粉末100的接合部110，因此可逐渐去除液相烧结介质材料210。
在图4中，可完全去除环绕银粉末100的液相烧结介质材料210，且银浆中的银粉末100可通过接合部110与至少一个或更多其它的银粉末接合。因此，可接合银浆，并且由于银浆的接合，可接合其上形成有银浆的半导体装置。
根据示例性实施方式，可通过在大于大气氧分压的氧分压下执行银浆的接合来减少接合时间。因此，当接合半导体装置时，可减少半导体装置对相当高温的暴露时间，从而使半导体装置的损坏最小化。
在相关技术中，现有的银浆接合可通过烧结执行，且烧结可能依赖于温度、烧结时间，且特别地依赖于银粉末的大小。然而，根据本发明的各个示例性实施方式，由于加热可在低于银熔点的温度范围内执行，因此可使用具有相当大颗粒的银粉末。
尽管本发明结合目前所认为的各个示例性实施方式进行了描述，但应当理解本发明不限于所公开的实施方式，相反，本发明意在涵盖包括在随附权利要求的主旨和范围内的各种变更和等同布置。

Claims (7)

1.一种接合银浆的方法，其包括：
制备包括多个银粉末和能够环绕各个银粉末的固相烧结介质材料的银浆；
在大于大气氧分压的氧分压下加热所述银浆；以及
接合所述银粉末。
2.根据权利要求1所述的方法，其中加热所述银浆的步骤在约250℃至约900℃的温度范围内执行。
3.根据权利要求1所述的方法，其中所述氧分压大于约0.21，且等于或小于约1。
4.根据权利要求1所述的方法，其中所述烧结介质材料是玻璃粉。
5.根据权利要求1所述的方法，其中加热所述银浆的步骤包括：
将所述固相烧结介质材料转化为液相烧结介质材料。
6.根据权利要求5所述的方法，其中接合所述银粉末的步骤包括：
使环绕各个银粉末表面的所述液相烧结介质材料与邻近的液相烧结介质材料接触；以及
通过所述液相烧结介质材料扩散所述银粉末的银原子和银离子，以形成接合所述银粉末的接合部。
7.根据权利要求6所述的方法，其中在接合所述银粉末的步骤中，去除所述液相烧结介质材料。
CN201410432816.1A 2013-12-30 2014-08-28 接合银浆的方法 Pending CN104752240A (zh)

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CN108028206A (zh) * 2015-10-02 2018-05-11 三井金属矿业株式会社 粘结接合结构

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108028206A (zh) * 2015-10-02 2018-05-11 三井金属矿业株式会社 粘结接合结构
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