CN104749872B - The method for forming mask plate figure - Google Patents
The method for forming mask plate figure Download PDFInfo
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- CN104749872B CN104749872B CN201310739011.7A CN201310739011A CN104749872B CN 104749872 B CN104749872 B CN 104749872B CN 201310739011 A CN201310739011 A CN 201310739011A CN 104749872 B CN104749872 B CN 104749872B
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- mask plate
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- threadlike graph
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A method of forming mask plate figure, it include: that original threadlike graph is provided, there are two opposite terminal adjacent segments for the original threadlike graph tool, the terminal adjacent segment is adjacent with the terminal of original threadlike graph, and it is consistent with its length direction, there is first distance between the terminal adjacent segment；The original threadlike graph is modified, new threadlike graph is obtained, the distance between two terminal adjacent segments of the new threadlike graph are second distance, and the second distance is greater than first distance；Based on the new threadlike graph, mask plate figure is formed in OPC model.The influence for even being eliminated mask plate technological limits to manufacture graphical quality can be effectively reduced, it is subsequent to manufacture the higher litho pattern of mass.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of methods for forming mask plate figure.
Background technique
In semiconductor fabrication, with the continuous diminution of design size, the diffraction effect of light becomes to be more and more obvious, it
As a result it is exactly finally to degenerate to the optical image that design configuration generates, finally becomes on silicon wafer by the actual graphical being lithographically formed
Must be different with design configuration, this phenomenon is referred to as OPE(Optical Proximity Effect, optical proximity effect).
In order to correct OPE phenomenon, OPC(Optical Proximity Correction, optical proximity effect are just produced
Amendment).The core concept of OPC be namely based on offset OPE phenomenon the considerations of establish OPC model, according to OPC model designing mask plate
Figure, although OPC phenomenon has occurred in the corresponding mask plate figure of litho pattern in this way after photoetching, due to according to OPC
The counteracting to the phenomenon is already have accounted for when modelling photomask pattern, therefore, litho pattern after photoetching is close to user
The targeted graphical actually intentionally got.
However, the graphical quality produced using existing OPC model is still to be improved in practical manufacturing process.
Summary of the invention
Problems solved by the invention is to provide a kind of method for forming mask plate figure, can effectively improve the figure of subsequent manufacture
Form quality amount.
To solve the above problems, the present invention provides a kind of method for forming mask plate figure, comprising: provide original line graph
Shape, there are two opposite terminal adjacent segment, the terminal adjacent segment and original threadlike graphs for the original threadlike graph tool
Terminal it is adjacent and consistent with its length direction, between the terminal adjacent segment have first distance；Modify the original line
Shape figure, obtains new threadlike graph, the distance between two terminal adjacent segments of the new threadlike graph be second away from
From the second distance is greater than first distance；Based on the new threadlike graph, mask plate figure is formed in OPC model
Shape.
Optionally, further includes: other adjacent with the terminal adjacent segment on the original linear graphic length direction of modification
Segment, make new threadlike graph along its length on the distance between two opposite segments successively decreased from terminal to centre.
Optionally, before modifying the original threadlike graph, first according to mask plate technological limits to ownership goal figure
Judged in advance, the original threadlike graph that extended meeting is limited by mask plate technological limits after obtaining in the ownership goal figure；It is right
The original threadlike graph that extended meeting is limited by mask plate technological limits after described is modified, and new threadlike graph is formed.
Optionally, the method that ownership goal figure is judged in advance are as follows: based on the ownership goal figure,
Initial mask plate figure is formed in OPC model, the initial mask plate figure has multiple sub- mask graphs, the sub- mask
Figure is corresponding with the original threadlike graph in ownership goal figure；Obtain the distance between each adjacent sub- mask graph；Work as phase
When the distance between adjacent sub- mask graph is less than mask plate technological limits, to original line corresponding with the adjacent sub- mask graph
Shape figure is marked, and labeled original threadlike graph is the original line graph that rear extended meeting is limited by mask plate technological limits
Shape.
Optionally, based on the mask plate figure formed in OPC model, mask plate is made.
Optionally, it is exposed, developed with photoresist layer of the mask plate with mask plate figure to crystal column surface, formed
Actual litho pattern.
Compared with prior art, technical solution of the present invention has the advantage that
After getting original threadlike graph, modify between two opposite terminal adjacent segments of original threadlike graph
Distance forms new threadlike graph, so that the distance between two terminal adjacent segments of new threadlike graph increase.With described
Based on new threadlike graph, in the mask plate figure that is formed in OPC model, the terminal adjacent sheet with original threadlike graph
The distance between corresponding side of section increases, and the distance between side corresponding with the terminal of original threadlike graph can be further
It reduces, it is subsequent to manufacture pledge so as to effectively reduce the influence for even being eliminated mask plate technological limits to manufacture graphical quality
Measure higher litho pattern.
Further, before modifying the original threadlike graph, first according to mask plate technological limits to ownership goal figure
Shape is judged in advance, obtains the original threadlike graph that rear extended meeting is limited by mask plate technological limits in the ownership goal figure；
The subsequent original threadlike graph only limited by mask plate technological limits the rear extended meeting is modified, and new line graph is formed
Shape can further increase working efficiency on the basis of the quality for the litho pattern for guaranteeing to produce.
Detailed description of the invention
Fig. 1 is the mask plate pictorial diagram on the mask plate of the prior art；
Fig. 2 is using the contrast schematic diagram between the prior art figure produced and ownership goal figure；
Fig. 3 is the flow diagram of the method for the formation mask plate figure of the embodiment of the present invention；
Fig. 4 is the schematic diagram of the ownership goal figure of the embodiment of the present invention；
Fig. 5 is the relation schematic diagram between the original threadlike graph in mask plate figure and ownership goal figure；
Fig. 6 is the contrast schematic diagram between new threadlike graph and original threadlike graph that the embodiment of the present invention is formed；
Fig. 7 is showing between mask plate figure and new threadlike graph, original threadlike graph that the embodiment of the present invention is formed
It is intended to；
Fig. 8 is the contrast schematic diagram between the figure that the embodiment of the present invention produces and ownership goal figure.
Specific embodiment
As described in background, the graphical quality that the OPC model of the prior art produces is still to be improved.
Find after study, with the appearance of high technology node, during forming mask plate figure, by limited because
Element is more and more, and most important limiting factor has: design rule (Design Rule), for example, the most narrow spacing between adjacent pattern
From the minimum feature etc. of figure；Mask plate technological limits (Mask Writing) correspond under process node figure on mask plate
Between permitted minimum range, for example, mask plate technological limits be 0.0175mm, if adjacent in the mask plate figure designed
The distance between figure is less than 0.0175mm, then two figures that may cause on mask plate at this again are connected.Therefore, existing
There is technology when forming mask plate figure according to targeted graphical, other than needing to consider corresponding lithography process parameters, it is also necessary to
Consider the influence of the factors such as design rule, mask plate technological limits.
Find, when forming mask plate figure using OPC model, there is the case where at dotted line as shown in figure 1 after study: for
Meet the requirement of mask plate technological limits, in the mask plate figure of formation between the first threadlike graph 10 and the second threadlike graph 11
Distance D minimum can only design it is identical as mask plate technological limits, for example, the first threadlike graph 10 and the second threadlike graph 11 it
Between distance D minimum can only be designed to 0.0175mm.The problem of aforementioned way is brought therewith is referring to FIG. 2, in order to make First Line
The distance between shape figure 10 and the second threadlike graph 11 D meet the requirement of mask plate technological limits, indirectly shorten user
The length of targeted graphical (shown in dotted line), it is therefore, subsequent to use aforementioned mask plate graphic making mask plate, using the mask plate
Photoresist layer is exposed, is developed, the length of the subsequent actual graphical (shown in solid) being actually formed then with ownership goal figure
The length of shape is different, and the length between the first actual graphical 30 and the first ownership goal figure 20 at least differs L1, second is practical
Length between figure 31 and second user targeted graphical 21 at least differs L2, influence the subsequent graphical quality produced.
After further research, a kind of method of new formation mask plate figure is provided, occurs above-mentioned feelings in order to prevent
Condition first modifies to the threadlike graph in ownership goal figure before using mask plate figure is formed in OPC model, increases
Two opposite the distance between terminal adjacent segments at threadlike graph terminal.Such method forms mask plate figure,
Its forming method is simple, and the subsequent figure produced is high-quality.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Referring to FIG. 3, the method for the formation mask plate figure of the embodiment of the present invention, comprising:
Step S101 provides original threadlike graph, opposite terminal adjacent segment that there are two the original threadlike graph tools,
The terminal adjacent segment is located at the terminal of original threadlike graph, and consistent with its length direction, the terminal adjacent segment it
Between have first distance；
Step S102 modifies the original threadlike graph, obtains new threadlike graph, and two of the new threadlike graph
The distance between terminal adjacent segment is second distance, and the second distance is greater than first distance；
Step S103 forms mask plate figure based on the new threadlike graph in OPC model.
It specifically, include more in the ownership goal figure 200 referring to Figure 4, providing ownership goal figure 200
A original threadlike graph (line) 201, there are two opposite terminal adjacent segment (line- for each original tool of threadlike graph 201
End adjacent) 201a, the terminal adjacent segment 201a is adjacent with terminal (line-end) 201b of original threadlike graph,
And it is consistent with its length direction, there is first distance D between the terminal adjacent segment 201a1。
As it was noted above, the prior art is limited by mask plate technological limits, the subsequent graphical quality produced needs to be mentioned
It is high.By the study found that the case where aforementioned mask plate technological limits typically occur in mask plate figure with original threadlike graph
201 corresponding position terminal 201b.
By repeatedly the study found that, for mask plate figure of different shapes, being fitted by controlling in practical manufacturing process
When illumination parameter, such as the energy etc. when exposure can form same litho pattern.For example, referring to FIG. 5, providing the
One mask plate figure 310 and the second mask plate figure 320, wherein the first mask plate figure 310 is close to the first sub- side of its terminal
The distance between 310a is X1, it is X positioned at the distance between second sub- side 310b of middle section2；Second mask plate figure 320
The distance between first sub- side 320a close to its terminal is Y1, Y1Greater than X1, between the second sub- side 320b of middle section
Distance be Y2, Y2Less than X2.Energy when by control exposure, using with the first mask plate figure 310 or the second mask
The mask plate of plate figure 320, it is subsequent that litho pattern 300 can be formed on wafer.
It by further analyzing, modifies, increases close to linear to ownership goal figure 200 in the embodiment of the present invention
Two opposite the distance between terminal adjacent segment 201a at graphic terminal 201b, can be formed has similar second mask plate
The mask plate figure of figure 320, so that the subsequent figure produced is high-quality.
In the embodiment of the present invention, for the quality for further increasing the figure being subsequently formed on wafer, each is original
Threadlike graph 201 is divided into multiple segments, the i.e. equal length of each segment.
Referring to FIG. 6, Fig. 6 shows an original threadlike graph 201 in Fig. 4, by taking the original threadlike graph 201 as an example
It carries out exemplary illustrated.The original threadlike graph 201 is modified, new threadlike graph 202, the new threadlike graph are obtained
The distance between 202 two terminal adjacent segment 202a are second distance D2, the second distance D2Greater than first distance D1。
The new threadlike graph 202 is used for the subsequent basis as designed mask figure.In the embodiment of the present invention,
It is as shown in Figure 4 to get ownership goal figure 200() after, it can be to original threadlike graph all in ownership goal figure 200
201 modify, and form new threadlike graph 202 corresponding with above-mentioned each original threadlike graph 201.The new line graph
Compared with original threadlike graph 201, the distance between new 202 two terminal adjacent segment 202a of threadlike graph increase shape 202,
The length of terminal 202b increases, and forms shape as shown in phantom in Figure 6.
It should be noted that can also include: that the original threadlike graph 201 of modification is long in other embodiments of the invention
Spend other segments adjacent with the terminal adjacent segment 202a on direction, make new threadlike graph 201 along its length on
The distance between two opposite segments are successively decreased from terminal to centre, to further increase the figure matter on the mask plate being subsequently formed
The quality for the litho pattern measured and produced.
It, can also be with it should be noted that in other embodiments of the invention: before the modification original threadlike graph,
First ownership goal figure is judged in advance according to mask plate technological limits, extended meeting is limited by mask plate technological limits after acquisition
Original threadlike graph；The original threadlike graph limited by mask plate technological limits the rear extended meeting is modified, and is formed new
Threadlike graph.Wherein, method ownership goal figure judged in advance are as follows: based on the ownership goal figure, in OPC
Initial mask plate figure is formed in model, the initial mask plate figure has multiple sub- mask graphs, the sub- mask graph
It is corresponding with the original threadlike graph in ownership goal figure；Obtain the distance between each adjacent sub- mask graph；When adjacent son
When the distance between mask graph is less than mask plate technological limits, to original line graph corresponding with the adjacent sub- mask graph
Shape is marked, and labeled original threadlike graph is the original threadlike graph that rear extended meeting is limited by mask plate technological limits.
It should be noted that not considering the factor of mask plate technological limits when forming the initial mask plate figure.
Referring to FIG. 7, forming mask plate figure 400 in OPC model based on the new threadlike graph 202.
The method that mask plate figure 400 is formed in OPC model includes: to obtain the new threadlike graph 202；Input phase
Technological parameter is closed into OPC model, forms mask plate figure 400.Due to forming the side of mask plate figure 400 in OPC model
Method is well known to those skilled in the art, and details are not described herein.
In the embodiment of the present invention, since new threadlike graph 202 carries out on the basis of original threadlike graph 201
Modification, the distance between terminal adjacent segment have increased.I.e. to the terminal as the figure for forming mask plate circular foundation
Width (perpendicular to the size of its length direction) increased.Therefore, under equal conditions, side compared with the prior art
Method has broader terminal by the mask plate figure 400 that OPC model is formed, that is, covers based on new threadlike graph 202
The distance between side 401 corresponding with the terminal adjacent segment 201a of original threadlike graph D in template graphics 4003Increase.Knot
Close description above it is found that in mask plate figure 400 between side 402 corresponding with the terminal 201b of original threadlike graph away from
From D4It can further reduce, so as to effectively reduce the influence for even being eliminated mask plate technological limits to manufacture graphical quality.
Referring to FIG. 8, with as shown in Figure 7 with mask plate figure 400() mask plate to the photoresist layer of crystal column surface
It is exposed, develops, form actual litho pattern 500.Wherein, in Fig. 8 dotted line show it is original in ownership goal figure
Threadlike graph 201.As shown in Figure 8, actual litho pattern 500 and ownership goal figure that the method for the embodiment of the present invention is formed
In original threadlike graph 201 length it is identical, hence it is evident that different from the situation in Fig. 2, that is, improve the figure that OPC model produces
Form quality amount.
To sum up, after getting original threadlike graph, two opposite terminal adjacent segments of original threadlike graph are modified
The distance between, new threadlike graph is formed, so that the distance between two terminal adjacent segments of new threadlike graph increase.
Based on the new threadlike graph, in the mask plate figure that is formed in OPC model, the terminal with original threadlike graph
The distance between corresponding side of adjacent segment increases, and the distance between side corresponding with the terminal of original threadlike graph can
It further reduces, it is subsequent to make so as to effectively reduce the influence for even being eliminated mask plate technological limits to manufacture graphical quality
Produce the higher litho pattern of quality.
Further, before modifying the original threadlike graph, first according to mask plate technological limits to ownership goal figure
Shape is judged in advance, obtains the original threadlike graph that rear extended meeting is limited by mask plate technological limits in the ownership goal figure；
The subsequent original threadlike graph only limited by mask plate technological limits the rear extended meeting is modified, and new line graph is formed
Shape can further increase working efficiency on the basis of the quality for the litho pattern for guaranteeing to produce.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (6)
1. a kind of method for forming mask plate figure characterized by comprising
Original threadlike graph is provided, for the original threadlike graph tool there are two opposite terminal adjacent segment, the terminal is adjacent
Segment is adjacent with the terminal of original threadlike graph, and consistent with its length direction, has first between the terminal adjacent segment
Distance；
The original threadlike graph is modified, new threadlike graph, two terminal adjacent segments of the new threadlike graph are obtained
The distance between be second distance, the second distance be greater than first distance；
Based on the new threadlike graph, mask plate figure, the mask plate figure and original line are formed in OPC model
The distance between corresponding side of terminal adjacent segment of shape figure increases, and side corresponding with the terminal of original threadlike graph
The distance between reduce, it includes: to obtain the new linear image that mask plate figure is formed in the OPC model, and input is related
Technological parameter forms mask pattern into OPC model.
2. forming the method for mask plate figure as described in claim 1, which is characterized in that further include: modify original line graph
Other segments adjacent with the terminal adjacent segment on shape length direction, make new threadlike graph along its length on two
The distance between opposite segment is successively decreased from terminal to centre.
3. forming the method for mask plate figure as claimed in claim 1 or 2, which is characterized in that modifying the original threadiness
Before figure, ownership goal figure is judged according to mask plate technological limits in advance first, is obtained in the ownership goal figure
The original threadlike graph that extended meeting is limited by mask plate technological limits afterwards；The original that the rear extended meeting is limited by mask plate technological limits
Beginning threadlike graph is modified, and new threadlike graph is formed.
4. forming the method for mask plate figure as claimed in claim 3, which is characterized in that described to be carried out to ownership goal figure
The method judged in advance are as follows: based on the ownership goal figure, initial mask plate figure is formed in OPC model, it is described first
Beginning mask plate figure has multiple sub- mask graphs, the sub- mask graph and the original threadlike graph phase in ownership goal figure
It is corresponding；Obtain the distance between each adjacent sub- mask graph；When the distance between adjacent sub- mask graph is less than mask plate technique
When the limit, original threadlike graph corresponding with the adjacent sub- mask graph is marked, labeled original threadlike graph
The original threadlike graph limited for rear extended meeting by mask plate technological limits.
5. forming the method for mask plate figure as described in claim 1, which is characterized in that with the mask formed in OPC model
Based on plate figure, mask plate is made.
6. forming the method for mask plate figure as claimed in claim 5, which is characterized in that with the mask with mask plate figure
Plate is exposed the photoresist layer of crystal column surface, develops, and forms actual litho pattern.
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| CN201310739011.7A CN104749872B (en) | 2013-12-27 | 2013-12-27 | The method for forming mask plate figure |
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| CN201310739011.7A CN104749872B (en) | 2013-12-27 | 2013-12-27 | The method for forming mask plate figure |
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| CN104749872B true CN104749872B (en) | 2019-07-02 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005517199A (en) * | 2001-06-08 | 2005-06-09 | ニューメリカル テクノロジーズ インコーポレイテッド | Optical proximity correction for phase shift photolithographic masks |
| CN101004550A (en) * | 2006-01-17 | 2007-07-25 | 联华电子股份有限公司 | Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire |
| CN102478761A (en) * | 2010-11-25 | 2012-05-30 | 无锡华润上华半导体有限公司 | Photomask manufacturing method and system |
| CN102759861A (en) * | 2011-04-28 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | Photoetching modifying method for integrated circuit manufacture |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4460794B2 (en) * | 2001-04-23 | 2010-05-12 | 株式会社東芝 | Exposure mask pattern correction method, pattern formation method, and program |
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2013
- 2013-12-27 CN CN201310739011.7A patent/CN104749872B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005517199A (en) * | 2001-06-08 | 2005-06-09 | ニューメリカル テクノロジーズ インコーポレイテッド | Optical proximity correction for phase shift photolithographic masks |
| CN101004550A (en) * | 2006-01-17 | 2007-07-25 | 联华电子股份有限公司 | Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire |
| CN102478761A (en) * | 2010-11-25 | 2012-05-30 | 无锡华润上华半导体有限公司 | Photomask manufacturing method and system |
| CN102759861A (en) * | 2011-04-28 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | Photoetching modifying method for integrated circuit manufacture |
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