CN104749872A - Method for forming mask template graph - Google Patents

Method for forming mask template graph Download PDF

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Publication number
CN104749872A
CN104749872A CN201310739011.7A CN201310739011A CN104749872A CN 104749872 A CN104749872 A CN 104749872A CN 201310739011 A CN201310739011 A CN 201310739011A CN 104749872 A CN104749872 A CN 104749872A
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mask plate
graph
original
threadlike graph
distance
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CN104749872B (en
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刘娟
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The invention relates to a method for forming mask template graph, which comprises the following steps: providing an original linear graph, wherein the original linear graph has two opposite terminal adjacent fragments, the terminal adjacent fragment and the original linear graph terminal are adjacent, and have consistent length direction, a first distance is generated between the terminal adjacent fragments; modifying the original linear graph to obtain a novel linear graph, wherein a second distance is generated between two terminal adjacent fragments of the novel linear graph, and the second distance is greater than the first distance; taking the novel linear graph as a base, and forming the mask template graph in an OPC model. According to the method, influence of graph quality due to mask template technology limitation can be effectively reduced even eliminated, and the etched patterns with higher quality can be produced.

Description

Form the method for mask plate figure
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of method forming mask plate figure.
Background technology
In semiconductor fabrication, along with constantly reducing of design size, the diffraction effect of light becomes more and more obvious, its result is exactly finally degenerate to the optical image that design configuration produces, the final actual graphical formed through photoetching on silicon chip becomes different with design configuration, this phenomenon is called as OPE(OpticalProximity Effect, optical proximity effect).
In order to revise OPE phenomenon, just create OPC(Optical Proximity Correction, optical proximity effect correction).The core concept of OPC is exactly set up OPC model based on the consideration of offsetting OPE phenomenon, according to OPC model designing mask plate figure, although the corresponding mask plate figure of the litho pattern like this after photoetching there occurs OPC phenomenon, but due to according to the counteracting considered during OPC model design photomask figure this phenomenon, therefore, the litho pattern after photoetching is close to the actual targeted graphical of wishing to obtain of user.
But in actual manufacture process, the graphical quality adopting existing OPC model to produce still has much room for improvement.
Summary of the invention
The problem that the present invention solves is to provide a kind of method forming mask plate figure, effectively can improve the graphical quality of follow-up manufacture.
For solving the problem, the invention provides a kind of method forming mask plate figure, comprise: original threadlike graph is provided, described original threadlike graph has two relative terminal adjacent segment, the terminal of described terminal adjacent segment and original threadlike graph is adjacent, and consistent with its length direction, between described terminal adjacent segment, there is the first distance; Revise described original threadlike graph, obtain new threadlike graph, the distance between two terminal adjacent segment of described new threadlike graph is second distance, and described second distance is greater than the first distance; Based on described new threadlike graph, in OPC model, form mask plate figure.
Optionally, also comprise: revise other fragments adjacent with described terminal adjacent segment on original wire graphic length direction, the distance between two relative fragments that new threadlike graph is gone up along its length is successively decreased to centre by terminal.
Optionally, before the described original threadlike graph of amendment, first according to mask plate technological limits, ownership goal figure is judged in advance, obtain the original threadlike graph that after in described ownership goal figure, extended meeting limits by mask plate technological limits; The original threadlike graph that described rear extended meeting limits by mask plate technological limits is modified, forms new threadlike graph.
Optionally, describedly the pre-method judged is carried out to ownership goal figure be: based on described ownership goal figure, initial mask plate figure is formed in OPC model, described initial mask plate figure has multiple sub-mask graph, and described sub-mask graph is corresponding with the original threadlike graph in ownership goal figure; Obtain the distance between each adjacent sub-mask graph; When distance between adjacent sub-mask graph is less than mask plate technological limits, the original threadlike graph corresponding to sub-mask graph adjacent with this marks, and the original threadlike graph be labeled is the original threadlike graph of rear extended meeting by the restriction of mask plate technological limits.
Optionally, based on the mask plate figure formed in OPC model, make mask plate.
Optionally, expose with the photoresist layer of mask plate to crystal column surface with mask plate figure, develop, form actual litho pattern.
Compared with prior art, technical scheme of the present invention has the following advantages:
After getting original threadlike graph, revise the distance between the relative terminal adjacent segment of two of original threadlike graph, form new threadlike graph, the distance between two terminal adjacent segment of new threadlike graph is increased.Based on described new threadlike graph, in the mask plate figure formed in OPC model, distance between its limit corresponding with the terminal adjacent segment of original threadlike graph increases, and the distance between the limit corresponding with the terminal of original threadlike graph can reduce further, thus can effectively reduce and even eliminate mask plate technological limits to the impact manufacturing graphical quality, follow-uply produce the higher litho pattern of quality.
Further, before the described original threadlike graph of amendment, first according to mask plate technological limits, ownership goal figure is judged in advance, obtain the original threadlike graph that after in described ownership goal figure, extended meeting limits by mask plate technological limits; Follow-uply only the original threadlike graph that described rear extended meeting limits by mask plate technological limits to be modified, form new threadlike graph, on the basis of quality ensureing the litho pattern that produce, can increase work efficiency further.
Accompanying drawing explanation
Fig. 1 is the mask plate pictorial diagram on the mask plate of prior art;
Fig. 2 is the contrast schematic diagram between figure and ownership goal figure adopting prior art to produce;
Fig. 3 is the schematic flow sheet of the method for the formation mask plate figure of the embodiment of the present invention;
Fig. 4 is the schematic diagram of the ownership goal figure of the embodiment of the present invention;
Fig. 5 is the relation schematic diagram between the original threadlike graph in mask plate figure and ownership goal figure;
Fig. 6 is the contrast schematic diagram between the new threadlike graph of embodiment of the present invention formation and original threadlike graph;
Fig. 7 is the mask plate figure that formed of the embodiment of the present invention and new threadlike graph, schematic diagram between original threadlike graph;
Fig. 8 is the contrast schematic diagram between the figure that produces of the embodiment of the present invention and ownership goal figure.
Embodiment
As described in background, the graphical quality that the OPC model of prior art produces still has much room for improvement.
Find through research, along with the appearance of high technology node, formed in the process of mask plate figure, the limiting factor be subject to gets more and more, and topmost limiting factor has: design rule (Design Rule), such as, minor increment between adjacent pattern, the minimum feature etc. of figure; Mask plate technological limits (MaskWriting), namely the minor increment under corresponding process node, mask plate allowed between figure, such as, mask plate technological limits is 0.0175mm, if the distance in the mask plate figure designed between adjacent pattern is less than 0.0175mm, then two of this place on mask plate figures may be caused again to be connected.Therefore, prior art, when forming mask plate figure according to targeted graphical, except needing to consider corresponding lithography process parameters, also needs the impact considering the factor such as design rule, mask plate technological limits.
Find through research, when adopting OPC model to form mask plate figure, there is the situation as dotted line place in Fig. 1: for meeting the requirement of mask plate technological limits, in the mask plate figure formed distance D between the first threadlike graph 10 with the second threadlike graph 11 minimum can only design with mask plate technological limits identical, such as, the distance D between the first threadlike graph 10 and the second threadlike graph 11 is minimum can only be designed to 0.0175mm.The problem that aforementioned way is brought thereupon please refer to Fig. 2, in order to the requirement making the distance D between the first threadlike graph 10 and the second threadlike graph 11 meet mask plate technological limits, indirectly shorten the length of ownership goal figure (shown in dotted line), therefore, follow-up employing aforementioned mask plate graphic making mask plate, described mask plate is adopted to expose photoresist layer, development, the length of the actual graphical (shown in solid line) that follow-up reality is formed is then different from the length of ownership goal figure, first actual graphical 30 at least differs L with the length between first user targeted graphical 20 1, the length between the second actual graphical 31 with the second ownership goal figure 21 at least differs L 2, affect the follow-up graphical quality produced.
After further research, provide a kind of method of formation mask plate figure newly, in order to prevent above-mentioned situation, before utilizing in OPC model and forming mask plate figure, first the threadlike graph in ownership goal figure is modified, increase the distance between the terminal adjacent segment that two of threadlike graph end are relative.This kind of method forms mask plate figure, and its formation method is simple, and the quality of the follow-up figure produced is good.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Please refer to Fig. 3, the method for the formation mask plate figure of the embodiment of the present invention, comprising:
Step S101, there is provided original threadlike graph, described original threadlike graph has two relative terminal adjacent segment, and described terminal adjacent segment is positioned at the terminal of original threadlike graph, and consistent with its length direction, between described terminal adjacent segment, there is the first distance;
Step S102, revises described original threadlike graph, obtains new threadlike graph, and the distance between two terminal adjacent segment of described new threadlike graph is second distance, and described second distance is greater than the first distance;
Step S103, based on described new threadlike graph, forms mask plate figure in OPC model.
Particularly, incorporated by reference to reference to figure 4, ownership goal figure 200 is provided, described ownership goal figure 200 comprises multiple original threadlike graph (line) 201, each original threadlike graph 201 has two relative terminal adjacent segment (line-end adjacent) 201a, terminal (line-end) 201b of described terminal adjacent segment 201a and original threadlike graph is adjacent, and consistent with its length direction, has the first distance D between described terminal adjacent segment 201a 1.
As mentioned before, prior art is by the restriction of mask plate technological limits, and the follow-up graphical quality produced has much room for improvement.Found by research, the situation of aforementioned mask plate technological limits appears at the terminal 201b corresponding position with original threadlike graph 201 in mask plate figure usually.
Through repeatedly studying discovery, in actual manufacture process, for difform mask plate figure, by controlling suitable illumination parameter, such as, energy etc. when exposing, all can form same litho pattern.Such as, please refer to Fig. 5, provide the first mask plate figure 310 and the second mask plate figure 320, wherein, the distance of the first mask plate figure 310 between the first sub-limit 310a of its terminal is X 1, the distance between the second sub-limit 310b of center section is X 2; The distance of the second mask plate figure 320 between the first sub-limit 320a of its terminal is Y 1, Y 1be greater than X 1, the distance between the second sub-limit 320b of center section is Y 2, Y 2be less than X 2.By controlling energy during exposure, adopting and there is the mask plate of the first mask plate figure 310 or the second mask plate figure 320, follow-uply all can form litho pattern 300 on wafer.
By further analysis, in embodiments of the invention, ownership goal figure 200 is modified, increase the distance between the terminal adjacent segment 201a that two of threadlike graph terminal 201b place are relative, the mask plate figure with similar second mask plate figure 320 can be formed, to make the quality of the follow-up figure produced good.
In embodiments of the invention, for improving the quality of the follow-up figure be formed on wafer further, each original threadlike graph 201 is divided into multiple fragment, and namely the length of each fragment is equal.
Please refer to Fig. 6, Fig. 6 shows an original threadlike graph 201 in Fig. 4, carries out exemplary illustrated for this original threadlike graph 201.Revise described original threadlike graph 201, obtain new threadlike graph 202, the distance between two terminal adjacent segment 202a of described new threadlike graph 202 is second distance D 2, described second distance D 2be greater than the first distance D 1.
Described new threadlike graph 202 is for the follow-up basis as designed mask figure.In embodiments of the invention, getting ownership goal figure 200(as shown in Figure 4) after, original threadlike graphs 201 all in ownership goal figure 200 can be modified, form the new threadlike graph 202 corresponding with above-mentioned each original threadlike graph 201.Described new threadlike graph 202 is compared with original threadlike graph 201, and the distance between new threadlike graph 202 two terminal adjacent segment 202a increases, and the length of terminal 202b increases, and forms shape as shown in phantom in Figure 6.
It should be noted that, in other embodiments of the invention, can also comprise: revise other fragments adjacent with described terminal adjacent segment 202a on original threadlike graph 201 length direction, distance between two relative fragments that new threadlike graph 201 is gone up along its length is successively decreased to centre by terminal, with the quality of litho pattern improving graphical quality on the mask plate of follow-up formation further and produce.
It should be noted that, in other embodiments of the invention, also can: before revising described original threadlike graph, first judge in advance ownership goal figure according to mask plate technological limits, after obtaining, extended meeting is by the original threadlike graph of mask plate technological limits restriction; The original threadlike graph that described rear extended meeting limits by mask plate technological limits is modified, forms new threadlike graph.Wherein, carrying out the pre-method judged to ownership goal figure is: based on described ownership goal figure, initial mask plate figure is formed in OPC model, described initial mask plate figure has multiple sub-mask graph, and described sub-mask graph is corresponding with the original threadlike graph in ownership goal figure; Obtain the distance between each adjacent sub-mask graph; When distance between adjacent sub-mask graph is less than mask plate technological limits, the original threadlike graph corresponding to sub-mask graph adjacent with this marks, and the original threadlike graph be labeled is the original threadlike graph of rear extended meeting by the restriction of mask plate technological limits.
It should be noted that, when forming described initial mask plate figure, not considering the factor of mask plate technological limits.
Please refer to Fig. 7, based on described new threadlike graph 202, in OPC model, form mask plate figure 400.
The method forming mask plate figure 400 in OPC model comprises: obtain described new threadlike graph 202; Input related process parameters, in OPC model, forms mask plate figure 400.Because the method forming mask plate figure 400 in OPC model is well known to those skilled in the art, do not repeat them here.
In embodiments of the invention, because new threadlike graph 202 is revised on the basis of original threadlike graph 201, the distance between its terminal adjacent segment increases.Namely the width (size perpendicular to its length direction) of the terminal of the figure as formation mask plate circular foundation is increased.Therefore, under equal conditions, compared to the method for prior art, based on new threadlike graph 202, the mask plate figure 400 formed by OPC model has wider terminal, the distance D between namely corresponding with the terminal adjacent segment 201a of original threadlike graph in mask plate figure 400 limit 401 3increase.Known in conjunction with description above, the distance D between limit 402 corresponding with the terminal 201b of original threadlike graph in mask plate figure 400 4can reduce further, thus can effectively reduce and even eliminate mask plate technological limits to the impact manufacturing graphical quality.
Please refer to Fig. 8, there is mask plate figure 400(as shown in Figure 7) the photoresist layer of mask plate to crystal column surface expose, development, forms actual litho pattern 500.Wherein, in Fig. 8, dotted line is depicted as the original threadlike graph 201 in ownership goal figure.As shown in Figure 8, the litho pattern 500 of reality that the method for the embodiment of the present invention is formed is identical with the length of the original threadlike graph 201 in ownership goal figure, is obviously different from the situation in Fig. 2, namely improves the graphical quality that OPC model produces.
To sum up, after getting original threadlike graph, revise the distance between the relative terminal adjacent segment of two of original threadlike graph, form new threadlike graph, the distance between two terminal adjacent segment of new threadlike graph is increased.Based on described new threadlike graph, in the mask plate figure formed in OPC model, distance between its limit corresponding with the terminal adjacent segment of original threadlike graph increases, and the distance between the limit corresponding with the terminal of original threadlike graph can reduce further, thus can effectively reduce and even eliminate mask plate technological limits to the impact manufacturing graphical quality, follow-uply produce the higher litho pattern of quality.
Further, before the described original threadlike graph of amendment, first according to mask plate technological limits, ownership goal figure is judged in advance, obtain the original threadlike graph that after in described ownership goal figure, extended meeting limits by mask plate technological limits; Follow-uply only the original threadlike graph that described rear extended meeting limits by mask plate technological limits to be modified, form new threadlike graph, on the basis of quality ensureing the litho pattern that produce, can increase work efficiency further.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.

Claims (6)

1. form a method for mask plate figure, it is characterized in that, comprising:
There is provided original threadlike graph, described original threadlike graph has two relative terminal adjacent segment, and the terminal of described terminal adjacent segment and original threadlike graph is adjacent, and consistent with its length direction, has the first distance between described terminal adjacent segment;
Revise described original threadlike graph, obtain new threadlike graph, the distance between two terminal adjacent segment of described new threadlike graph is second distance, and described second distance is greater than the first distance;
Based on described new threadlike graph, in OPC model, form mask plate figure.
2. the method forming mask plate figure as claimed in claim 1, it is characterized in that, also comprise: revise other fragments adjacent with described terminal adjacent segment on original wire graphic length direction, the distance between two relative fragments that new threadlike graph is gone up along its length is successively decreased to centre by terminal.
3. the method forming mask plate figure as claimed in claim 1 or 2, it is characterized in that, before the described original threadlike graph of amendment, first according to mask plate technological limits, ownership goal figure is judged in advance, obtain the original threadlike graph that after in described ownership goal figure, extended meeting limits by mask plate technological limits; The original threadlike graph that described rear extended meeting limits by mask plate technological limits is modified, forms new threadlike graph.
4. the method forming mask plate figure as claimed in claim 3, it is characterized in that, describedly the pre-method judged is carried out to ownership goal figure be: based on described ownership goal figure, initial mask plate figure is formed in OPC model, described initial mask plate figure has multiple sub-mask graph, and described sub-mask graph is corresponding with the original threadlike graph in ownership goal figure; Obtain the distance between each adjacent sub-mask graph; When distance between adjacent sub-mask graph is less than mask plate technological limits, the original threadlike graph corresponding to sub-mask graph adjacent with this marks, and the original threadlike graph be labeled is the original threadlike graph of rear extended meeting by the restriction of mask plate technological limits.
5. the method forming mask plate figure as claimed in claim 1, is characterized in that, based on the mask plate figure formed, makes mask plate in OPC model.
6. the method forming mask plate figure as claimed in claim 5, is characterized in that, expose with the photoresist layer of mask plate to crystal column surface with mask plate figure, develop, and forms actual litho pattern.
CN201310739011.7A 2013-12-27 2013-12-27 The method for forming mask plate figure Active CN104749872B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157083A1 (en) * 2001-04-23 2002-10-24 Kabushiki Kaisha Toshiba Exposure mask pattern correction method, pattern formation method, and a program product for operating a computer
JP2005517199A (en) * 2001-06-08 2005-06-09 ニューメリカル テクノロジーズ インコーポレイテッド Optical proximity correction for phase shift photolithographic masks
CN101004550A (en) * 2006-01-17 2007-07-25 联华电子股份有限公司 Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire
CN102478761A (en) * 2010-11-25 2012-05-30 无锡华润上华半导体有限公司 Photomask manufacturing method and system
CN102759861A (en) * 2011-04-28 2012-10-31 中芯国际集成电路制造(上海)有限公司 Photoetching modifying method for integrated circuit manufacture

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157083A1 (en) * 2001-04-23 2002-10-24 Kabushiki Kaisha Toshiba Exposure mask pattern correction method, pattern formation method, and a program product for operating a computer
JP2005517199A (en) * 2001-06-08 2005-06-09 ニューメリカル テクノロジーズ インコーポレイテッド Optical proximity correction for phase shift photolithographic masks
CN101004550A (en) * 2006-01-17 2007-07-25 联华电子股份有限公司 Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire
CN102478761A (en) * 2010-11-25 2012-05-30 无锡华润上华半导体有限公司 Photomask manufacturing method and system
CN102759861A (en) * 2011-04-28 2012-10-31 中芯国际集成电路制造(上海)有限公司 Photoetching modifying method for integrated circuit manufacture

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