CN104743498A - Single chip micro-electro-mechanical system and preparation method thereof - Google Patents
Single chip micro-electro-mechanical system and preparation method thereof Download PDFInfo
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- CN104743498A CN104743498A CN201310740267.XA CN201310740267A CN104743498A CN 104743498 A CN104743498 A CN 104743498A CN 201310740267 A CN201310740267 A CN 201310740267A CN 104743498 A CN104743498 A CN 104743498A
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Abstract
The invention relates to a single chip micro-electro-mechanical system and a preparation method thereof. The single chip micro-electro-mechanical system is characterized in that a chip comprises a pressure sensor and an acceleration sensor. The single chip micro-electro-mechanical system solves the problems of the prior art. Through two combined chip processes, an acceleration sensor and a capacitive pressure sensor are arranged in a chip and share a structure, and the common part of the structure comprises a cavity without a sacrificial layer, a mass block material and a conductive material on the cavity. The acceleration sensor and the capacitive pressure sensor can be obtained simultaneously by one tapeout process so that a cost is greatly reduced and the combined chip can reduce a circuit board area.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the present invention relates to a kind of single chip micro-computer electric system and preparation method thereof.
Background technology
Along with the development of semiconductor technology, on the market of sensor (motion sensor) series products, smart mobile phone, integrated CMOS and microelectromechanical systems (MEMS) device become most main flow, state-of-the-art technology day by day, and along with the renewal of technology, the developing direction of this kind of transmission sensors product is the size that scale is less, high-quality electric property and lower loss.
Microelectromechanical systems (MEMS) is in volume, power consumption, weight and have fairly obvious advantage in price, so far multiple different sensor has been developed, such as pressure sensor, acceleration transducer, inertial sensor and other sensor.
Along with the development of technology, the integrated level of various integrated circuit improves constantly, dimensional requirement for device is also more and more less, such as in smart mobile phone, smart mobile phone function is more and more abundanter, and required sensor also gets more and more, and PCB surface is amassed limited, too much sensor chip must take a lot of area, and cause circuit board size to become large, corresponding mobile phone also becomes heavier.
Multiple sensor is often comprised in the smart mobile phone of prior art, it is such as the sensor such as acceleration and barometer, but described acceleration and air pressure flowmeter sensor two chips are mounted on pcb board respectively, such two chips need to encapsulate respectively, and account for pcb board area, make mobile phone also size become become greatly heavier.
Also two kinds of sensors or two or more sensors are not made a chips in prior art, cause packaging cost very high, and chip area is also very large, can not meet now for little, clever, skilful demand, therefore need to be improved further, to eliminate the problems referred to above the preparation method of sensor in device.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention, in order to overcome current existing problems, provides a kind of preparation method of single chip micro-computer electric system, comprising:
Substrate is provided, in described substrate, is formed with pressure sensor bottom electrode and acceleration transducer first electrode be isolated from each other and the second electrode;
Sacrificial material layer patterning, with mineralization pressure sensor sacrificial material layer on described pressure sensor bottom electrode, the substrate simultaneously between described acceleration transducer first electrode and the second electrode forms acceleration transducer sacrificial material layer;
Depositing first conductive material layer patterning, to cover described pressure sensor sacrificial material layer and described acceleration transducer sacrificial material layer respectively;
Etch the first conductive material layer above described pressure sensor sacrificial material layer, to form the first opening, expose described pressure sensor sacrificial material layer;
Remove described pressure sensor sacrificial material layer, with mineralization pressure sensor cavities;
The deposition quality bulk bed of material on the substrate, to fill described first opening, and covers described first conductive material layer;
Described mass material layer above acceleration transducer sacrificial material layer described in patterning and described first conductive material layer, to form the second opening, expose described acceleration transducer sacrificial material layer;
The sidewall of described second opening forms the second conductive material layer;
Remove described acceleration transducer sacrificial material layer, to form acceleration transducer cavity;
Described mass material layer above pressure sensor cavities described in patterning, with mineralization pressure sensor deep trouth.
As preferably, described sacrificial material layer selects photoresist or silica;
One in described first conductive material layer aluminium, copper, titanium and tungsten.
As preferably, sacrificial material layer patterning, to form the spaced acceleration transducer sacrificial material layer of middle tool.
As preferably, depositing first conductive material layer, to fill the interval between described acceleration transducer sacrificial material layer;
Then the first conductive material layer described in patterning, to disconnect described first conductive material layer above described first conductive material layer above described pressure sensor sacrificial material layer and described acceleration transducer sacrificial material layer.
As preferably, the method that the sidewall of described second opening is formed the second conductive material layer is:
Depositing second conductive material layer, with the second conductive material layer described in the sidewall of described second opening and bottom deposit;
Described second conductive material layer beyond the sidewall removing described second opening.
As preferably, select described second conductive material layer beyond the unglazed sidewall shining described second opening of method removal of dry etching.
Present invention also offers the single chip micro-computer electric system that a kind of said method prepares, in described single chip micro-computer electric system, comprise pressure sensor and acceleration transducer on a single die simultaneously.
The present invention is in order to solve problems of the prior art, the technological process of two kinds of chips is combined, process integration degree of will speed up sensor and capacitance pressure transducer, is utilized to be placed in a chips, and there is structure to share, structure common sparing comprises cavity, mass material, the conductive material etc. on cavity removing sacrifice layer and formed, a flow just can be had acceleration transducer and capacitance pressure transducer, simultaneously, significantly reduce cost, and chip integration can bring diminishing of board area.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-1j is the preparation process schematic diagram of single chip micro-computer electric system in the embodiment of the invention;
Fig. 2 is preparation technology's flow chart of the electric system of single chip micro-computer described in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed description is proposed, so that the preparation method of single chip micro-computer electric system of the present invention to be described.Obviously, the specific details that the technical staff that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Should give it is noted that term used here is only to describe specific embodiment, and be not intended to restricted root according to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative be also intended to comprise plural form.In addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, describe in more detail with reference to the accompanying drawings according to exemplary embodiment of the present invention.But these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, providing these embodiments to be of the present inventionly disclose thorough and complete to make, and the design of these exemplary embodiments fully being conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, exaggerate the thickness in layer and region, and use the element that identical Reference numeral represents identical, thus will omit description of them.
The problem that the packaging cost that pcb board brings is high and pcb board area is large is mounted on respectively in the present invention in order to solve degree of will speed up and barometer two chips in prior art, the technological process of two kinds of chips is combined, a flow just can be had acceleration transducer and capacitance pressure transducer, simultaneously, significantly reduces cost.And chip integration can bring diminishing of board area.
Below in conjunction with accompanying drawing 1a-1j to of the present invention one particularly embodiment be further described.
First, perform step 201 and first substrate 201 is provided.
Particularly, with reference to Fig. 1 a, described substrate 201 comprises Semiconductor substrate, can also comprise the various active devices formed over the substrate further, wherein said Semiconductor substrate can be at least one in following mentioned material: stacked SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacked silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Form various active device on the semiconductor substrate, such as form cmos device and other active device on the semiconductor substrate, described active device is not limited to a certain.
Perform step 202, in described substrate 201, form the substrate metal layer of patterning, with mineralization pressure sensor base electrode 20 and the first spaced electrode 21 and the second electrode 22.
Particularly, in described substrate, form described substrate metal layer, to form bottom electrode, the method forming substrate metal layer is on the substrate: Semiconductor substrate forms dielectric layer, pattern dielectric layer forms groove, fills metal material in the trench and forms described electrode.Substrate 201 described in patterning, in described substrate 201, such as form the photoresist layer (not shown) of patterning, described photoresist layer being formed with the pattern of opening, is then mask patterning described substrate 201 with described photoresist layer, to form multiple opening in described substrate 201.
Be positioned at the bottom electrode of middle part as pressure sensor, be positioned at described pressure sensor bottom electrode both sides as the splicing ear of top electrodes of described pressure sensor will formed after connecting, for the various devices of described MEMS and bottom are formed electrical connection.
Wherein said first electrode 21 and the second electrode 22 form the battery lead plate in acceleration transducer jointly in conjunction with the first conductive material layer 202 formed in subsequent process and the second conductive material layer 204, for the formation of capacitor.
Wherein, described metal material can select copper, gold, silver, tungsten and other similar materials, preferable alloy copper is as conductive material, can be filled described groove by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP) and be covered described oxide skin(coating), the method for preferred Cu electroplating (ECP) forms described metal material.
Wherein said bottom metal layers comprises the first electrode 21 and the second electrode 22 and pressure sensor bottom electrode 20, to be separated by between described first electrode 21 and the second electrode 22 and pressure sensor bottom electrode 20 setting, but can be completed by a step, realize the compatibility of described two processing steps.
Then perform step 203, substrate 201 and described substrate metal layer form sacrificial material layer and patterning, to form acceleration transducer sacrificial material layer 31 and pressure sensor sacrificial material layer 30.
Particularly, with reference to Fig. 1 b, described sacrificial material layer can be photoresist, SiO
2, N doping silicon carbide layer NDC(Nitrogen dopped Silicon Carbite), SiN layer or amorphous carbon material (AC), preferred SiO in a detailed description of the invention of the present invention
2as sacrificial material layer.
After the described sacrificial material layer of deposition, perform planarisation step, flattening method conventional in field of semiconductor manufacture can be used in this step to realize the planarized of surface.The limiting examples of this flattening method comprises mechanical planarization method and chemically mechanical polishing flattening method.Chemically mechanical polishing flattening method is more conventional.
Then sacrificial material layer described in patterning, with mineralization pressure sensor sacrificial material layer 30 above described pressure sensor bottom electrode 20, between described first electrode 21 and the second electrode 22, substrate 201 forms acceleration transducer sacrificial material layer 31 simultaneously.
Perform step 204, depositing first conductive material layer 202, to cover described pressure sensor area and acceleration transducer region.
Particularly, with reference to Fig. 1 c, depositing first conductive material layer 202, to cover described pressure sensor area, the pressure sensor sacrificial material layer 30 covering described pressure sensor bottom electrode 20 particularly and be positioned at above described pressure sensor bottom electrode 20; Cover described acceleration transducer region simultaneously, particularly, cover the acceleration transducer sacrificial material layer 31 above described first electrode 21 and the second electrode 22 and the substrate 201 between the first electrode 21 and the second electrode 22.Wherein, described first conductive material layer 202 can aluminium, copper, titanium, tungsten and other similar materials, preferable alloy copper is as conductive material, can be filled described groove by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP) and be covered described oxide skin(coating), the method for preferred Cu electroplating (ECP) forms described metal material.
Wherein, after depositing first conductive material layer 202, also comprise described first conductive material layer 202 step of etching, to be disconnected by the conductive material of described pressure sensor area and acceleration transducer overlying regions, avoid the formation of electrical connection.
Wherein be positioned at the first conductive material layer 202 in described pressure sensor sacrificial material layer 30 for the formation of top electrodes, in conjunction with described pressure sensor bottom electrode 20 mineralization pressure sensor capacitance, after described top electrodes is under pressure generation deformation, distance between top electrodes and pressure sensor bottom electrode 20 changes, thus electric capacity changes, realize the sensing of pressure.
Perform step 205, etch the first conductive material layer 202 above described pressure sensor sacrificial material layer 30, to form the first opening 10, expose described pressure sensor sacrificial material layer 30.
Particularly, as shown in Figure 1 d, the conductive material layer above pressure sensor sacrificial material layer 30 described in patterning, to form the first opening 10, described first opening 10 for removing described pressure sensor sacrificial material layer 30 in subsequent steps, with mineralization pressure sensor cavities.
Dry etching conductive material layer can be selected in this step, can CF be selected in described dry etching
4, CHF
3, add N in addition
2, CO
2, O
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Perform step 206, remove described pressure sensor sacrificial material layer 30, with mineralization pressure sensor cavities.
Particularly, as shown in fig. le, in the present invention in order to impact described pressure sensor bottom electrode 20 while the described sacrificial material layer of removal, the method selecting etching selectivity larger etches.
Dry etching can be selected, reactive ion etching (RIE), ion beam milling, plasma etching in the specific embodiment of the invention.Carry out dry etching preferably by one or more RIE step, such as, can select N in the present invention
2in conduct etching atmosphere, other a small amount of gas such as CF can also be added simultaneously
4, CO
2, O
2, described etching pressure can be 50-200mTorr, is preferably 100-150mTorr, power is 200-600W, and described etching period is 5-80s, more preferably 10-60s in the present invention, select larger gas flow in the present invention, as preferably, at N of the present invention simultaneously
2flow be 30-300sccm, be more preferably 50-100sccm.
Remove pressure sensor sacrificial material layer 30 mineralization pressure sensor cavities above described pressure sensor bottom electrode 20 afterwards, and form cantilever beam above described bottom electrode layer.
Perform step 207, the deposition quality bulk bed of material 203, to fill described first opening 10, and covers described pressure sensor area and acceleration transducer region.
Particularly, as shown in Figure 1 f, the deposition quality bulk bed of material 203, to fill described first opening 10, cover described conductive material layer 202 and described substrate 201, wherein simultaneously, the described deposition quality bulk bed of material 203 is silicon or polysilicon, and as preferably, described mass material layer 203 is silicon; The thickness of described mass material layer 203 is 10-100um, is preferably 20-50um.The deposition process of mass material layer 203 can be low-pressure chemical vapor deposition (LPCVD), the one in laser ablation deposition (LAD) and epitaxial growth that chemical vapor deposition (CVD) method, physical vapor deposition (PVD) method or ald (ALD) method etc. are formed in the present invention.
Perform step 208, etch described mass material layer 203 and described first conductive material layer 202, to form the second opening 11, expose described acceleration transducer sacrificial material layer 31.
Particularly, as shown in Figure 1 g, the first conductive material layer 202 above patterning mass material layer 203 and described acceleration transducer sacrificial material layer 31, to form the second opening 11, described second opening 11 for removing described acceleration transducer sacrificial material layer 31 in subsequent steps, to form acceleration transducer cavity.
Dry etching first conductive material layer 202 can be selected in this step, can CF be selected in described dry etching
4, CHF
3, add N in addition
2, CO
2, O
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Perform step 209, at deposited on sidewalls second conductive material layer 204 of described second opening 11.
Particularly, with reference to Fig. 1 h, depositing second conductive material layer 204, can aluminium, copper, titanium, tungsten and other similar materials, preferable alloy copper is as conductive material, can be filled described groove by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP) and be covered described oxide skin(coating), the method for preferred Cu electroplating (ECP) forms described metal material.
Wherein, after depositing second conductive material layer 204, select described second conductive material layer 204 beyond the unglazed sidewall shining described second opening 11 of method removal of dry etching, only retain the second conductive material layer 204 being positioned at the sidewall of described second opening 11.
Perform step 210, remove described acceleration transducer sacrificial material layer 31, to form acceleration transducer cavity.
Particularly, with reference to Fig. 1 i, in the present invention in order to impact described first electrode 21 and the second electrode 22 while the described sacrificial material layer of removal, the method selecting etching selectivity larger etches.
Dry etching can be selected, reactive ion etching (RIE), ion beam milling, plasma etching in the specific embodiment of the invention.Carry out dry etching preferably by one or more RIE step, such as, can select N in the present invention
2in conduct etching atmosphere, other a small amount of gas such as CF can also be added simultaneously
4, CO
2, O
2, described etching pressure can be 50-200mTorr, is preferably 100-150mTorr, power is 200-600W, and described etching period is 5-80s, more preferably 10-60s in the present invention, select larger gas flow in the present invention, as preferably, at N of the present invention simultaneously
2flow be 30-300sccm, be more preferably 50-100sccm.
Above described first electrode 21 and the second electrode 22, acceleration transducer cavity is formed after removing acceleration transducer sacrificial material layer 31, and cantilever beam is formed in described cavity, described cantilever beam can move in described cavity, wherein said first electrode 21 and the second electrode 22 form the battery lead plate in acceleration transducer jointly in conjunction with the first conductive material layer 202 formed in subsequent process and the second conductive material layer 204, to form capacitor when described cantilever beam moves, the electric capacity of described capacitor changes, thus the sensing realized acceleration.
Perform step 211, the mass material layer 203 above pressure sensor bottom electrode 20 described in patterning, with mineralization pressure sensor deep trouth.
Particularly, select deep reaction ion etching (DRIE) method to etch mass material layer 203 above described pressure sensor bottom electrode 20, in described deep reaction ion etching (DRIE) step, select gas hexa-fluoride (SF
6) as process gas, apply radio-frequency power supply, make hexa-fluoride react air inlet and form high ionization, controlling operating pressure in described etching step is 20mTorr-8Torr, frequently power is 600W, 13.5MHz, and Dc bias can continuous control in-500V-1000V, ensure the needs of anisotropic etching, select the etching photoresistance Selection radio that deep reaction ion etching (DRIE) can keep very high.The equipment that described deep reaction ion etching (DRIE) system can select ability conventional, is not limited to a certain model.
As preferably, select SF in this step
6as etching agent, C
4f
8produce agent as polymer, and etching hockets with being polymerized, in etching process, ion gun power supply and grid bias power supply work simultaneously, make the SF that reative cell passes into
6produce F+ and incomplete anisotropic etching is carried out to silicon, polymer residue is not had in all after date silicon grooves often completing an etching and polymerization, this technical barrier just overcoming a large amount of residual of deep etching process middle slot interpolymer and be difficult to removing, achieves " cleaning " etching of High Aspect Ratio Trench.
The present invention is in order to solve problems of the prior art, the technological process of two kinds of chips is combined, process integration degree of will speed up sensor and capacitance pressure transducer, is utilized to be placed in a chips, and there is structure to share, structure common sparing comprises cavity, mass material, the conductive material etc. on cavity removing sacrifice layer and formed, a flow just can be had acceleration transducer and capacitance pressure transducer, simultaneously, significantly reduce cost, and chip integration can bring diminishing of board area.
Fig. 2 is preparation technology's flow chart of the electric system of single chip micro-computer described in the embodiment of the invention, specifically comprises the following steps:
Step 201 provides substrate, is formed with pressure sensor bottom electrode and acceleration transducer first electrode be isolated from each other and the second electrode in described substrate;
Step 202 sacrificial material layer patterning, with mineralization pressure sensor sacrificial material layer on described pressure sensor bottom electrode, the substrate simultaneously between described acceleration transducer first electrode and the second electrode forms acceleration transducer sacrificial material layer;
Step 203 depositing first conductive material layer patterning, to cover described pressure sensor sacrificial material layer and described acceleration transducer sacrificial material layer respectively;
Step 204 etches the first conductive material layer above described pressure sensor sacrificial material layer, to form the first opening, exposes described pressure sensor sacrificial material layer;
Step 205 removes described pressure sensor sacrificial material layer, with mineralization pressure sensor cavities;
Step 206 is the deposition quality bulk bed of material on the substrate, to fill described first opening, and covers described first conductive material layer;
Described mass material layer above acceleration transducer sacrificial material layer described in step 207 patterning and described first conductive material layer, to form the second opening, expose described acceleration transducer sacrificial material layer;
Step 208 forms the second conductive material layer on the sidewall of described second opening;
Step 209 removes described acceleration transducer sacrificial material layer, to form acceleration transducer cavity;
Described mass material layer above pressure sensor cavities described in step 210 patterning, with mineralization pressure sensor deep trouth.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (7)
1. a preparation method for single chip micro-computer electric system, comprising:
Substrate is provided, in described substrate, is formed with pressure sensor bottom electrode and acceleration transducer first electrode be isolated from each other and the second electrode;
Sacrificial material layer patterning, with mineralization pressure sensor sacrificial material layer on described pressure sensor bottom electrode, the substrate simultaneously between described acceleration transducer first electrode and the second electrode forms acceleration transducer sacrificial material layer;
Depositing first conductive material layer patterning, to cover described pressure sensor sacrificial material layer and described acceleration transducer sacrificial material layer respectively;
Etch the first conductive material layer above described pressure sensor sacrificial material layer, to form the first opening, expose described pressure sensor sacrificial material layer;
Remove described pressure sensor sacrificial material layer, with mineralization pressure sensor cavities;
The deposition quality bulk bed of material on the substrate, to fill described first opening, and covers described first conductive material layer;
Described mass material layer above acceleration transducer sacrificial material layer described in patterning and described first conductive material layer, to form the second opening, expose described acceleration transducer sacrificial material layer;
The sidewall of described second opening forms the second conductive material layer;
Remove described acceleration transducer sacrificial material layer, to form acceleration transducer cavity;
Described mass material layer above pressure sensor cavities described in patterning, with mineralization pressure sensor deep trouth.
2. method according to claim 1, is characterized in that, described sacrificial material layer selects photoresist or silica;
One in described first conductive material layer aluminium, copper, titanium and tungsten.
3. method according to claim 1, is characterized in that, sacrificial material layer patterning, to form the spaced acceleration transducer sacrificial material layer of middle tool.
4. method according to claim 3, is characterized in that, depositing first conductive material layer, to fill the interval between described acceleration transducer sacrificial material layer;
Then the first conductive material layer described in patterning, to disconnect described first conductive material layer above described first conductive material layer above described pressure sensor sacrificial material layer and described acceleration transducer sacrificial material layer.
5. method according to claim 1, is characterized in that, the method that the sidewall of described second opening is formed the second conductive material layer is:
Depositing second conductive material layer, with the second conductive material layer described in the sidewall of described second opening and bottom deposit;
Described second conductive material layer beyond the sidewall removing described second opening.
6. method according to claim 5, is characterized in that, selects described second conductive material layer beyond the unglazed sidewall shining described second opening of method removal of dry etching.
7. the single chip micro-computer electric system for preparing of the described method of one of claim 1 to 6, comprises pressure sensor and acceleration transducer in described single chip micro-computer electric system on a single die simultaneously.
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