CN104743501A - Preparation method for motion sensor - Google Patents
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- CN104743501A CN104743501A CN201310743292.3A CN201310743292A CN104743501A CN 104743501 A CN104743501 A CN 104743501A CN 201310743292 A CN201310743292 A CN 201310743292A CN 104743501 A CN104743501 A CN 104743501A
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Abstract
The invention relates to a preparation method for a motion sensor. The method includes: providing a base, on which a CMOS device is formed; forming a bottom electrode on the base and an MEMS substrate positioned above the bottom electrode, and forming a cavity between the bottom electrode and the MEMS substrate; etching the MEMS substrate to the bottom electrode to form a deep through hole, thereby exposing the bottom electrode; etching the top of the deep through hole to expand the key size of the deep through hole top opening; forming an insulation layer on the side wall of the deep through hole; and depositing a metal material in the deep through hole, and then conducting etching to remove the metal material deposited at the deep through hole top so as to maintain a large key size of the opening. According to the method provided by the invention, no hole is formed in the filling process, and the device yield is improved.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the present invention relates to a kind of preparation method of motion sensor.
Background technology
Along with the development of semiconductor technology, on the market of motion sensor (motion sensor) series products, smart mobile phone, integrated CMOS and MEMS (MEMS) device become most main flow, state-of-the-art technology day by day, and along with the renewal of technology, the developing direction of this kind of transmission sensors product is the size that scale is less, high-quality electric property and lower loss.
Need to use deep reaction ion etching (DRIE) system time most of when preparing described motion sensor (motion sensor) in prior art, reactive ion etching is one of the important procedure of IC manufacturing, MEMS processing and other device fabrication.Be mainly used in the etching of the various films such as polysilicon, silicon nitride, silica membrane and metal film, belong to dry etching, reactive ion etching is the active group and the material generation chemical reaction that is corroded that utilize high frequency glow discharge to produce, forming volatile products makes sample surfaces atom come off from lattice, thus realizes equipment prepared by sample surfaces Micropicture.Have a wide range of applications in fields such as semiconductor, MEMS, solar cell and photoelectricity.
As shown in Figure 1, first the substrate 101 being formed with cmos device is provided, form dielectric layer on the substrate, dielectric layer described in patterned features, form sensor base electrode layer 104 and for the formation of electrical connection conductive layer, then described sensor base electrode layer forms the fluted dielectric layer of tool, to expose described sensor base electrode layer; Sacrificial material layer, to fill described groove; Deposition MEMS substrate 103, to cover described sacrificial material layer; MEMS substrate 103 described in patterning, to form opening, sacrificial material layer described in exposed portion; Remove described sacrificial material layer, to form cavity above described sensor base electrode layer.
Further, in order to form electrical connection with described MEMS substrate 103 and substrate 101, etch described MEMS substrate 103, dielectric layer is to described conductive layer, described engraving method is DRIE method, but because the through hole formed in DRIE method has high depth-width ratio, be generally (aspect ratio) for 10-15:1 even higher, the opening size of described through hole is generally all less than 5um, to when filling metal in the groove that described depth-width ratio is very large, easily encase air and form hole, the resistance of described through hole is caused to become large, the operating voltage of the device be positioned at above described through hole is caused to increase, the rising of temperature is caused when working long hours.
Therefore, in prior art in the process of the various MEMS of preparation, the through hole formed by DRIE method has larger depth-to-width ratio, cause when filling metal and easily form hole, cause filling effect poor, the performance of device and yield are reduced, so need to improve prior art, to eliminate the problems referred to above.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention, in order to overcome current existing problems, provides a kind of preparation method of motion sensor, comprising:
Substrate is provided, described substrate is formed with cmos device;
The MEMS substrate forming bottom electrode on the substrate and be positioned at above described bottom electrode, and cavity is formed between described bottom electrode and described MEMS substrate;
Etch described MEMS substrate to described bottom electrode, to form deep via, and then expose described bottom electrode;
Etch the top of described deep via, to expand the open-topped critical size of described deep via;
The sidewall of described deep via forms insulating barrier;
Deposit metallic material in described deep via, then the described metal material of described deep via deposited atop is removed in etching, has large critical size to keep described opening.
As preferably, described method comprises further:
Repeatedly repeat deposit metallic material in described deep via, etch the step of the described metal material of described deep via deposited atop, simultaneously to filling described deep via completely.
As preferably, the method forming described deep via is:
Described MEMS substrate is formed the mask layer of patterning;
With described mask layer for mask, deep reaction ion etching method is selected to etch described MEMS substrate, to form described deep via.
As preferably, the method that the sidewall of described deep via is formed insulating barrier is:
At sidewall and the bottom deposit insulating materials of described deep via;
Selective etch removes the described insulating materials bottom described deep via, to form insulating barrier on the sidewall of described deep via.
As preferably, the method forming bottom electrode is on the substrate:
Depositing first dielectric layer on the substrate;
First dielectric layer described in patterning, to form groove in described first dielectric layer;
Fill metal material in the trench, to form described bottom electrode.
As preferably, described method also comprises:
Depositing second dielectric layer on described bottom electrode;
Second dielectric layer described in patterning, forms groove, exposes the bottom electrode being positioned at mid portion.
As preferably, described method also comprises:
Described second dielectric layer forms described MEMS substrate, in conjunction with the described groove of described second dielectric layer to form described cavity.
As preferably, the method that described second dielectric layer is formed described MEMS substrate is:
The described MEMS substrate of independent formation;
Described MEMS substrate is passed through the method for eutectic bond or thermal bonding and described second dielectric layer bonding, with shape all-in-one-piece structure.
As preferably, the thickness of described MEMS substrate is 10-50um, and the depth-to-width ratio of described deep via is 10-15:1.
As preferably, described metal material is tungsten.
In the present invention when deep via fills metal material, in order to obtain good filling effect, after etching forms deep via, first the top of described deep via is etched, open described deep via, to expand the critical size at described deep via top, and divide multiple step to carry out in the process of deposit metallic material in described deep via, all first deposit metal material layer described in one deck in each of the steps, then at the top of the described deep via of etching, remove the metal material layer of described deep via deposited atop, to ensure that described deep via top has larger critical size, bubble can not be introduced in deposition process, hole can not be formed in the filling process, repeat the filling mode of this step, to having filled completely.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 is the structural representation of MEMS sensor described in prior art;
The preparation process schematic diagram that Fig. 2 a-2f is sensor described in the embodiment of the invention;
Preparation technology's flow chart that Fig. 3 is sensor described in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed description is proposed, so that the preparation method of motion sensor of the present invention to be described.Obviously, the specific details that the technical staff that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Should give it is noted that term used here is only to describe specific embodiment, and be not intended to restricted root according to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative be also intended to comprise plural form.In addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, describe in more detail with reference to the accompanying drawings according to exemplary embodiment of the present invention.But these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, providing these embodiments to be of the present inventionly disclose thorough and complete to make, and the design of these exemplary embodiments fully being conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, exaggerate the thickness in layer and region, and use the element that identical Reference numeral represents identical, thus will omit description of them.
In the present invention in order to solve motion sensor described in prior art (motion sensor) preparation process in the metal filled problem easily occurring hole, described method is improved, said method comprising the steps of:
Substrate is provided, described substrate is formed with cmos device;
Form bottom electrode on the substrate and be positioned at MEMS substrate above described bottom electrode, and form cavity between described bottom electrode and described MEMS substrate;
MEMS substrate described in patterning, to described bottom electrode, to form deep via, exposes described bottom electrode;
Etch the top of described deep via, to expand the critical size of described deep via opening;
The sidewall of described deep via forms insulating barrier;
Deposit metallic material in described deep via, etches the opening of described deep via in deposition process, to keep large opening size.
In the present invention in order to obtain better filling effect, after formation deep via, first the top of described deep via being etched, larger opening of feeling uncertain, and then filling, can guarantee can not cause bubble in the filling process by described method.
As preferably, in described deep via, the process of deposit metallic material divides multiple step to carry out, all first deposit metal material layer described in one deck in each of the steps, then at the top of the described deep via of etching, remove the metal material layer of described deep via deposited atop, to ensure that described deep via top has larger critical size, as preferably, select the engraving method of overall etch (blank etch) in this step, to ensure the metal material layer only removing described deep via top in etching process, and retain the metal material layer of described deep via sidewall and bottom.
The filling mode in above-mentioned steps is all selected in each step, namely the top that then layer of metal material layer etches described deep via is first deposited, to ensure, in next step deposition, there is comparatively big uncork, bubble can not be introduced in deposition process, hole can not be formed in the filling process, repeat the filling mode of this step, to having filled completely.
As preferably, the method that the sidewall of described deep via is formed insulating barrier is:
Deposition of dielectric materials in described deep via; Selective etch removes the described dielectric material bottom described deep via, to form insulating barrier on the sidewall of described deep via, further, can also etch the top of described deep via in this step, to remove the described insulating barrier of part at described deep via top, only insulating barrier described in reserve part, with while reaching better isolation effect, can ensure that described deep via top has larger opening size, guarantees the filling effect had in the filling of subsequent metal material.
Embodiment 1
Below in conjunction with accompanying drawing 2a-2f to of the present invention one particularly embodiment be further described.
First, perform step 201 and first substrate 201 is provided, described substrate 201 is formed with cmos device.
Particularly, with reference to Fig. 2 a, described substrate 201 comprises Semiconductor substrate, and the various active devices formed over the substrate, wherein said Semiconductor substrate can be at least one in following mentioned material: stacked SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacked silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Form various active device on the semiconductor substrate, such as form cmos device and other active device on the semiconductor substrate, described active device is not limited to a certain.
Then perform step 202, described substrate 201 forms bottom electrode 203.
Particularly, the method forming bottom electrode 203 is on the substrate:
Depositing first dielectric layer 202 on the substrate, then on described first dielectric layer 202, form the photoresist layer (not shown) of patterning, described photoresist layer is formed with the pattern of opening, then be mask patterning described first dielectric layer 202 with described photoresist layer, to form opening in described first dielectric layer 202.
Then metal material is filled in said opening, to form bottom electrode 203, described bottom electrode 203 is positioned at the electrode of middle part as sensor, described sensor is motion sensor or inertial sensor, the bottom electrode 203 being positioned at described sensor electrode both sides, as metal interconnecting layer, is electrically connected for being formed by the cmos device of described MEMS and bottom.
Wherein, described metal material can select copper, gold, silver, tungsten and other similar materials, preferable alloy copper is as conductive material, can be filled described groove by the method for physical vapor deposition (PVD) method or Cu electroplating (ECP) and be covered described oxide skin(coating), the method for preferred Cu electroplating (ECP) forms described metal material.
Then perform step 203, depositing second dielectric layer 204 on described bottom electrode 203, and form groove 20 in described second dielectric layer 204;
Particularly, depositing second dielectric layer 204 on described bottom electrode 203, described second dielectric layer 204 can use such as SiO
2, fluorocarbon (CF), carbon doped silicon oxide (SiOC) or carbonitride of silicium (SiCN) etc.Or, also can be used in the film etc. fluorocarbon (CF) defining SiCN film.Fluorocarbon with fluorine (F) and carbon (C) for main component.Fluorocarbon also can use the material having noncrystal (amorphism) and construct.Described second dielectric layer 204 can also use the Porous structures such as such as carbon doped silicon oxide (SiOC).
Then the second dielectric layer 204 described in patterning, to form groove 20, described groove 20, for forming airtight cavity in subsequent steps, can be selected dry etching second dielectric layer 204 to form groove in this step, can select CF in described dry etching
4, CHF
3, add N in addition
2, CO
2, O
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Perform step 204, described second dielectric layer 204 forms MEMS substrate 205, in conjunction with the described groove 20 of described second dielectric layer 204 to form cavity.
Particularly, in this step, formation method and the conventional method of described MEMS substrate 205 are different, and non-immediate deposits on described second dielectric layer 204, but first prepare MEMS substrate 205, then described MEMS substrate 205 and described second dielectric layer 204 bonding are integrated, form airtight cavity, to form sensor with this through described groove 20.
Further, described MEMS substrate 205 is silicon or polysilicon, and as preferably, the thickness of described MEMS substrate 205 is 10-100um, is preferably 20-50um.The deposition process of MEMS substrate 205 can be low-pressure chemical vapor deposition (LPCVD), the one in laser ablation deposition (LAD) and epitaxial growth that chemical vapor deposition (CVD) method, physical vapor deposition (PVD) method or ald (ALD) method etc. are formed in the present invention.
Be bonded together by the method for eutectic bond or thermal bonding between described MEMS substrate 205 and described second dielectric layer 204, described second dielectric layer 204 is preferably SiO in this embodiment
2, be preferably the method for thermal bonding in this step, use H respectively in this step
2sO
4+ H
2o
2, RCA2, RCA1 cleaning, cleaning process must strictly observe working specification, comprising the control etc. to solution concentration proportioning, heat time, flushing period, to strengthen the hydrophily of two bonding faces..In addition, can silicon/silicon bonding realize the waviness (also claiming flatness) also depending on Si sheet surface, usually need at below 5A.More than guarantee when two conditions, the annealing temperature of 180 DEG C just can ensure larger bond strength.
Perform step 205, MEMS substrate 205 described in patterning, to described bottom electrode 203, to form deep via 10, exposes described bottom electrode 203.
Particularly, described MEMS substrate 205 is formed organic distribution layer (Organicdistribution layer, ODL), siliceous bottom antireflective coating (Si-BARC), the photoresist layer of deposit patterned is gone up described siliceous bottom antireflective coating (Si-BARC), pattern definition on wherein said photoresist will to form the figure of deep via, then with described photoresist layer for mask layer etching described organic distribution layer, bottom antireflective coating, described MEMS substrate 205 and the second dielectric layer 204, form the pattern of deep via 10.
Described deep via 10 is positioned at the both sides of described cavity, the depth-to-width ratio of described deep via is 10-15:1, be preferably 15:1, described deep via has vertical sidewall, the number of described deep via can be selected as required, is not limited to a certain scope, as preferably, in this embodiment, described deep via number is 2.
Particularly, select deep reaction ion etching (DRIE) method to etch described MEMS substrate 205 and described second dielectric layer 204, in described deep reaction ion etching (DRIE) step, select gas hexa-fluoride (SF
6) as process gas, apply radio-frequency power supply, make hexa-fluoride react air inlet and form high ionization, controlling operating pressure in described etching step is 20mTorr-8Torr, frequently power is 600W, 13.5MHz, and Dc bias can continuous control in-500V-1000V, ensure the needs of anisotropic etching, select the etching photoresistance Selection radio that deep reaction ion etching (DRIE) can keep very high.The equipment that described deep reaction ion etching (DRIE) system can select ability conventional, is not limited to a certain model.
As preferably, select SF in this step
6as etching agent, C
4f
8produce agent as polymer, and etching hockets with being polymerized, in etching process, ion gun power supply and grid bias power supply work simultaneously, make the SF that reative cell passes into
6produce F+ and incomplete anisotropic etching is carried out to silicon, polymer residue is not had in all after date silicon grooves often completing an etching and polymerization, this technical barrier just overcoming a large amount of residual of deep etching process middle slot interpolymer and be difficult to removing, achieves " cleaning " etching of High Aspect Ratio Trench.
Perform step 206, etch the top of described deep via 10, to expand the critical size of described deep via 10 opening.
Particularly, with reference to Fig. 2 b, by wet-cleaning or dry etch step, to expand the critical size at described deep via 10 top, structure wide at the top and narrow at the bottom is formed, to be more convenient to the filling of subsequent conductive material.Described etching step selects dry etching in the present invention, and described etching can select CF
4, CHF
3, add N in addition
2, CO
2in one as etching atmosphere, wherein gas flow is CF
410-200sccm, CHF
310-200sccm, N
2or CO
2or O
210-400sccm, described etching pressure is 30-150mTorr, and etching period is 5-120s, is preferably 5-60s, is more preferably 5-30s.
Perform step 207, the sidewall of described deep via 10 forms insulating barrier 206;
Particularly, with reference to Fig. 2 b, the method that the sidewall of described deep via 10 is formed insulating barrier is: deposition of dielectric materials in described deep via 10; Selective etch removes the described dielectric material bottom described deep via 10, to form insulating barrier 206 on the sidewall of described deep via.
Further, can also etch the top of described deep via in this step, with the described insulating barrier 206 of the part removing described deep via top, only insulating barrier 206 described in reserve part, with while reaching better isolation effect, can ensure that described deep via top has larger opening size, guarantees the filling effect had in the filling of subsequent metal material.
Described insulating barrier 206 can use such as SiO
2, fluorocarbon (CF), carbon doped silicon oxide (SiOC) or carbonitride of silicium (SiCN) etc.Be preferably SiO
2.
Perform step 208, deposit metallic material 207 in described deep via, etches the opening of described deep via 10 in deposition process, to keep large opening size.
Particularly, with reference to Fig. 2 d, metal material 207 described in deposition one deck, described metal material 207 can select copper, gold, silver, tungsten and other similar materials, and preferable alloy tungsten is as conductive material.
Then at the top of the described deep via 10 of etching, with reference to Fig. 2 e, remove the metal material 207 of described deep via 10 deposited atop, to ensure that described deep via 10 top has larger critical size, as preferably, select the engraving method of overall etch (blank etch) in this step, to ensure the metal material layer only removing described deep via top in etching process, and retain the metal material layer of described deep via 10 sidewall and bottom.
Further, EKC cleaning agent and H is first selected in this process
2o
2mixed solution, then select DHF to carry out wet-cleaning, wherein said EKC is remaining remover after the etching ashing of azanol series, described DHF be dilution hydrofluoric acid (wherein comprise HF, H
2o
2and H
2o), this process can be good at metal material layer 207 described in etch-back.
As preferably, in described deep via, the process of deposit metallic material divides multiple step to carry out, the filling mode in above-mentioned steps is all selected in each step, namely first deposit the top that then layer of metal material layer etches described deep via, to ensure, in next step deposition, there is comparatively big uncork, can not bubble be introduced in deposition process, hole can not be formed in the filling process, repeat the filling mode of this step, to having filled completely, obtain pattern as shown in figure 2f.
In the present invention when deep via fills metal material, in order to obtain good filling effect, after etching forms deep via, first the top of described deep via is etched, open described deep via, to expand the critical size at described deep via top, and divide multiple step to carry out in the process of deposit metallic material in described deep via, all first deposit metal material layer described in one deck in each of the steps, then at the top of the described deep via of etching, remove the metal material layer of described deep via deposited atop, to ensure that described deep via top has larger critical size, bubble can not be introduced in deposition process, hole can not be formed in the filling process, repeat the filling mode of this step, to having filled completely.
Preparation technology's flow chart that Fig. 3 is sensor described in the embodiment of the invention, specifically comprises the following steps:
Step 201 provides substrate, and described substrate is formed with cmos device;
The MEMS substrate that step 202 forms bottom electrode on the substrate and is positioned at above described bottom electrode, and cavity is formed between described bottom electrode and described MEMS substrate;
Step 203 etches described MEMS substrate to described bottom electrode, to form deep via, and then exposes described bottom electrode;
Step 204 etches the top of described deep via, to expand the open-topped critical size of described deep via;
Step 205 forms insulating barrier on the sidewall of described deep via;
Step 206 is deposit metallic material in described deep via, and then the described metal material of described deep via deposited atop is removed in etching, has large critical size to keep described opening.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (10)
1. a preparation method for motion sensor, comprising:
Substrate is provided, described substrate is formed with cmos device;
The MEMS substrate forming bottom electrode on the substrate and be positioned at above described bottom electrode, and cavity is formed between described bottom electrode and described MEMS substrate;
Etch described MEMS substrate to described bottom electrode, to form deep via, and then expose described bottom electrode;
Etch the top of described deep via, to expand the open-topped critical size of described deep via;
The sidewall of described deep via forms insulating barrier;
Deposit metallic material in described deep via, then the described metal material of described deep via deposited atop is removed in etching, has large critical size to keep described opening.
2. method according to claim 1, is characterized in that, described method comprises further:
Repeatedly repeat deposit metallic material in described deep via, etch the step of the described metal material of described deep via deposited atop, simultaneously to filling described deep via completely.
3. method according to claim 1, is characterized in that, the method forming described deep via is:
Described MEMS substrate is formed the mask layer of patterning;
With described mask layer for mask, deep reaction ion etching method is selected to etch described MEMS substrate, to form described deep via.
4. method according to claim 1, is characterized in that, the method that the sidewall of described deep via is formed insulating barrier is:
At sidewall and the bottom deposit insulating materials of described deep via;
Selective etch removes the described insulating materials bottom described deep via, to form insulating barrier on the sidewall of described deep via.
5. method according to claim 1, is characterized in that, the method forming bottom electrode is on the substrate:
Depositing first dielectric layer on the substrate;
First dielectric layer described in patterning, to form groove in described first dielectric layer;
Fill metal material in the trench, to form described bottom electrode.
6. method according to claim 5, is characterized in that, described method also comprises:
Depositing second dielectric layer on described bottom electrode;
Second dielectric layer described in patterning, forms groove, exposes the bottom electrode being positioned at mid portion.
7. method according to claim 6, is characterized in that, described method also comprises:
Described second dielectric layer forms described MEMS substrate, in conjunction with the described groove of described second dielectric layer to form described cavity.
8. method according to claim 7, is characterized in that, the method that described second dielectric layer is formed described MEMS substrate is:
The described MEMS substrate of independent formation;
Described MEMS substrate is passed through the method for eutectic bond or thermal bonding and described second dielectric layer bonding, with shape all-in-one-piece structure.
9. method according to claim 1, is characterized in that, the thickness of described MEMS substrate is 10-50um, and the depth-to-width ratio of described deep via is 10-15:1.
10. method according to claim 1, is characterized in that, described metal material is tungsten.
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| CN105197871A (en) * | 2015-10-26 | 2015-12-30 | 杭州士兰微电子股份有限公司 | Mems device and manufacturing method thereof |
| CN105197871B (en) * | 2015-10-26 | 2019-04-05 | 杭州士兰微电子股份有限公司 | MEMS device and its manufacturing method |
| CN109103190A (en) * | 2018-08-24 | 2018-12-28 | 长江存储科技有限责任公司 | The forming method of semiconductor structure |
| CN109103190B (en) * | 2018-08-24 | 2020-12-11 | 长江存储科技有限责任公司 | Method for forming semiconductor structure |
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