CN104714311B - MEMS thermo-optic tunable filter with low optical loss - Google Patents
MEMS thermo-optic tunable filter with low optical loss Download PDFInfo
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- CN104714311B CN104714311B CN201510167742.8A CN201510167742A CN104714311B CN 104714311 B CN104714311 B CN 104714311B CN 201510167742 A CN201510167742 A CN 201510167742A CN 104714311 B CN104714311 B CN 104714311B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The invention provides an MEMS thermo-optic tunable filter with low optical loss, which comprises a multi-cavity optical interference film filter layer and a micro heater, wherein a half-wave resonant cavity is made of AlN or GaN thermo-optic tunable dielectric film materials, and the central wavelength of the MEMS thermo-optic tunable filter can be adjusted by controlling the working current of the micro heater. The invention adopts AlN and GaN as cavity materials of a half-wave resonant cavity in the optical interference film, has higher thermo-optic coefficient and lower extinction coefficient, and can greatly reduce the optical loss of the narrow-band tunable filter. The invention can effectively solve the problems of large optical loss and unsatisfactory application of filtering waveforms of the existing MEMS thermo-optic tuned filter, and has good application prospect in the fields of optical communication and optical sensing.
Description
Technical field
The invention belongs to fiber optic communication, Fibre Optical Sensor and MEMS fields of light devices, more particularly to a kind of low optical losses
MEMS Thermo-optic tunability filters.
Background technology
Adjustable light wave-filter typically refers to the adjustable optical filter of centre wavelength of optical band pass filter, due to its wave
The long flexibility adjusted, has important application in fiber optic communication and sensory field of optic fibre, is the key that constitute Intelligent Optical Network
One of device.Based on the tunable optical filter of MEMS technology due to its with microminaturization, integrated and batch micro operations, at
This low advantage increasingly becomes the emphasis of research and development.
MEMS optic tunable filters are mainly based upon Fabry-Perot cavity principle of interference, wavelength tuning mechanism master at present
There are the tuning of chamber length and refractive index to tune two schemes.It is by its of electrostatic drive or Piezoelectric Driving FP chambers that chamber, which grows tuning scheme,
In a face micro-reflector moved along normal direction long to adjust FP chambers, realize tuning to resonance wavelength.This scheme wavelength tune
Humorous range is big, but needs to make the optics micro-reflector of two high optical qualities, is accurately controlled the mutual of two micromirrors and puts down
Row degree, and two micromirrors of holding are also required to the very high depth of parallelism during mobile minute surface, therefore technology is realized
Extremely difficult and more sensitive for interference such as extraneous vibration, voltage fluctuations, wavelength stability is poor, while there is also wavelength drifts
Shifting problem influences its application.It is typically only capable to realize single-chamber based on MEMS technology Fabry-Perot cavity tunable optic filter
Light interferencing filter, the curve of spectrum are long-range navigation thatch spectral line, it is difficult to meet the application demand of passband flat-top, and it uses single-chamber
Structure, it is also difficult to solve the contradiction of narrow linewidth and big tuning range.
Scheme is tuned for refractive index, the membrane structure reported all uses polysilicon or monocrystalline silicon thin film as half-wave
The wavelength tuning material of long FP chambers changes silicon refractive index come adjusting wavelength using resistance heating.This scheme is directly adopted due to FP chambers
With membrane structure, the not mechanical movement of micro mirror, wavelength stability is good, since optical film technique equipment reaches very high water
It is flat, chamber is significantly better than on making complexity using refractive index tuning scheme and grows tuning scheme, and may be implemented narrow linewidth,
The flat optical filter of passband.Realize that refractive index tunes scheme, there are mainly two types of paths at present.One is based on single layer monocrystalline
Silicon fiml tunes material as refractive index, which is generally made of the top layer silicon of SOI materials, and thickness is a few micrometers to number
Ten microns, optical thin film is the optical interference film of single-chamber, and therefore, it is difficult to realize the spike filter of flat-top.Another kind is base
In multilayer non-crystalline silicon or polysilicon membrane as refractive index thermo-optical tunability material, generally use silicon deposited film technique is made
Make, hundreds of nanometers of thickness, optical thin film is the optical interference film of multi-cavity, therefore the narrow-band-filter of flat-top may be implemented
Piece.
The manufacture of optical thin film is the technology of maturation, uses limited several optical medium material conducts for a long time
Thin-film material, this is primarily due to, and these thin film deposition processes are ripe, optical thin film performance is good, can reduce the outfit of plated film target
Quantity.As the reason of wavelength tuning material it is based on the very high thermo-optical coeffecient of silicon materials using silicon materials, 1.3- can be transmitted
The maturity of 1.6 μm of optical communicating waveband and silicon thin film technique.But the narrowband of the FP cavity materials using silicon as thermo-optical tunability
The light insertion loss of flat-top adjustable optical filter is up to 2-5dB, and line width is narrower, and insertion loss is higher, cannot be satisfied optic communication
The requirement of system, this result annoying always optic communication device worker.New optical film materials are found, the thin-film material
It can realize the thermo-optical tunability of wavelength and compatible with existing film making process, while Thermo-optic tunability light can be greatly reduced
The optical loss for learning film is the target of adjustable light wave-filter research long sought.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of MEMS of low optical losses heat
Optic tunable filter, for solving the problems, such as that Thermo-optic tunability filter optical is lost high in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of MEMS Thermo-optic tunabilities of low optical losses
Filter, the MEMS Thermo-optic tunabilities filter include that half wave resonances chamber uses AlN or GaN thermo-optic tunable dielectric thin-film materials
Multi-cavity optical interference film filter layer and micro-heater can be adjusted by controlling the operating current of the micro-heater
The centre wavelength of the MEMS Thermo-optic tunabilities filter.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, the multi-cavity light
It includes the half wave resonances chamber and multilayer dielectricity using AlN or GaN thermo-optic tunable dielectric thin-film materials to learn interference thin film filter layer
Film is alternately laminated to be formed, and the multilayer dielectric film is by high refractive index medium film and low refractive index dielectric film is alternately laminated forms.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, the high refraction
The material of rate deielectric-coating includes TiO2、Si3N4And Ta2O5In one kind, the material of the low refractive index dielectric film includes SiO2。
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, the multi-cavity light
It is the narrowband optical interferometric filter formed by N number of cascade optical interference chamber to learn interference thin film filter layer, wherein N >=1.
Further, work as N>When 1, the band logical planarization of light wave may be implemented in the multi-cavity optical interference film filter layer.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, micro- heating
Device be the resistance heater made of metal film strips or semiconductor film item, the micro-heater be located at working beam hot spot it
Outside, it is centrosymmetric distribution using working beam center as symmetric points.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, the MEMS heat
Optic tunable filter further includes microtemperature sensor, and the microtemperature sensor is made of metal film strips or semiconductor film item
Resistance temperature detector, be located at working beam hot spot except, the microtemperature sensor can be tuning wavelength
Closed loop feedback provide interferometric filter temperature signal.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, it is micro- by controlling
The spectrum tune of the multi-cavity optical interference film filter layer centre wavelength 0nm~50nm may be implemented in the operating current of heater
It is humorous.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, the multi-cavity light
It learns interference thin film filter layer to be formed on single-crystal silicon support film, the single-crystal silicon support film passes through monocrystalline with silicon substrate
Silicon hanging beam connects, and the silicon substrate is etched with light hole, constitutes heat-insulated micro-structure to reduce heat transfer, to reduce electric heating tune
Humorous power consumption.
Further, the thickness of the single-crystal silicon support film is 3 μm~100 μm, the back of the body of the single-crystal silicon support film
Face deposition has optical anti-reflective film.
Further, the size of the light hole is more than the spot size of working beam.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, the multi-cavity light
It learns interference thin film filter layer to be formed on silicon substrate, the silicon substrate is etched with light hole, at the light hole directly exposes
The multi-cavity optical interference film filter layer.
A kind of preferred embodiment of the MEMS Thermo-optic tunability filters of low optical losses as the present invention, the hot light
It is multiple that tunable optic filter can be applied to tunable optical receiver, tunable laser, DWDM optical performance monitors, light up/down
With in device.
As described above, the present invention provides a kind of MEMS Thermo-optic tunability filters of low optical losses, the hot light of MEMS
Tunable optic filter includes the multi-cavity optical interference film that half wave resonances chamber uses AlN or GaN thermo-optic tunable dielectric thin-film materials
Filter layer and micro-heater can adjust the MEMS Thermo-optic tunabilities by controlling the operating current of the micro-heater
The centre wavelength of filter.The present invention uses the cavity material of AlN, GaN as half wave resonances chamber in FP chambers, has both had higher
Thermo-optical coeffecient, and have lower extinction coefficient, the optical loss of narrow-band tunable filter can be greatly lowered.This hair
It is bright to be effectively improved the problem of existing loss of existing MEMS thermo-optical tunabilities filter is big and filter shape cannot meet application,
It has a good application prospect in optic communication, light sensing field.
Description of the drawings
Fig. 1~Fig. 3 is shown as the structure of the MEMS Thermo-optic tunability filters of the low optical losses in the embodiment of the present invention 1
Schematic diagram.
Fig. 4~Fig. 5 is shown as the structure of the MEMS Thermo-optic tunability filters of the low optical losses in the embodiment of the present invention 2
Schematic diagram.
Component label instructions
1 multi-cavity optical interference film filter layer
11 AlN or GaN thermo-optic tunable dielectric thin-film materials
10 multilayer dielectric films
2 micro-heaters
3 microtemperature sensors
4 single-crystal silicon support films
5 optical anti-reflective films
6 monocrystalline silicon hanging beams
7 silicon substrates
8 lead pad
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Fig. 5.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in FIG. 1 to 3, the present invention provides a kind of MEMS Thermo-optic tunability filters of low optical losses, described
MEMS Thermo-optic tunability filters include the multi-cavity light that half wave resonances chamber uses AlN or GaN thermo-optic tunables dielectric thin-film material 11
Interference thin film filter layer 1 and micro-heater 2 are learned, by controlling the operating current of the micro-heater 2, can be adjusted described
The centre wavelength of MEMS Thermo-optic tunability filters.
As shown in Figure 1, the MEMS Thermo-optic tunability filters in the present embodiment include：Multi-cavity optical interference film filter layer
1, single-crystal silicon support film 4, monocrystalline silicon hanging beam 6, optical anti-reflective film 5, silicon substrate 7, micro-heater 2, microtemperature sensor 3 and
Lead pad 8.
Wherein, the multi-cavity optical interference film filter layer 1 is formed on single-crystal silicon support film 4, and positioned at described
The middle section of single-crystal silicon support film 4, referred to as thang-kng region；The optical anti-reflective film 5 is deposited on the back of the body of single-crystal silicon support film 4
Face, the single-crystal silicon support film 4 are connect with silicon substrate 7 by monocrystalline silicon hanging beam 6, and the silicon substrate 7 is etched with thang-kng
Hole constitutes heat-insulated micro-structure to reduce heat transfer, power consumption is tuned to reduce electric heating.In the present embodiment, the monocrystalline silicon branch
The thickness for supportting film 4 is 3 μm~100 μm, also, the size of the light hole is more than the spot size of working beam.
As shown in figure 3, the micro-heater 2 and microtemperature sensor 3 are made in the edge of the single-crystal silicon support film 4
Region is centered around around the multi-cavity optical interference film filter layer 1, and the micro-heater 2 and microtemperature sensor 3 pass through
Lead pad 8 on monocrystalline silicon hanging beam 6 lead to silicon substrate 7.In the present embodiment, the micro-heater 2 is by gold
Belong to resistance heater made of film item or semiconductor film item, the micro-heater 2 is located at except the hot spot of working beam, with work
It is that symmetric points are centrosymmetric distribution, also, the microtemperature sensor 3 is by metal film strips or semiconductor film to make beam center
Resistance temperature detector made of item is located at except the hot spot of working beam, and the microtemperature sensor 3 can be to adjust
The closed loop feedback of resonance wave length provides the temperature signal of interferometric filter.By controlling the operating current of micro-heater 2, may be implemented
The spectral tuning of the 1 centre wavelength 1nm~50nm of multi-cavity optical interference film filter layer.
As shown in Fig. 2, the multi-cavity optical interference film filter layer 1 includes using AlN or GaN thermo-optic tunable dielectric films
The half wave resonances chamber of material 11 and multilayer dielectric film 10 is alternately laminated forms, the multilayer dielectric film 10 is by high refractive index medium
Film and low refractive index dielectric film is alternately laminated forms.The material of the high refractive index medium film includes TiO2、Si3N4And Ta2O5In
One kind, the material of the low refractive index dielectric film includes SiO2。
The multi-cavity optical interference film filter layer 1 is to be interfered by the narrowband optical that N number of cascade optical interference chamber is formed
Optical filter, wherein N >=1.In addition, working as N>When 1, the band logical that light wave may be implemented in the multi-cavity optical interference film filter layer 1 is flat
Smoothization.
In addition, the multi-cavity optical interference film filter layer 1 can be optimized according to filtering characteristic demand, in this reality
It applies in example, by taking 3 cavity configurations as an example, each film layer is arranged as：
S|(HL)34T(LH)3L(HL)34T(LH)3L(HL)34T(LH)3|air
Wherein, S indicates that substrate silicon, H indicate 1/4 wavelength thickness of the high refractive index medium film in multilayer dielectric film 10, L tables
Show that 1/4 wavelength thickness of the low refractive medium film layer in multilayer dielectric film 10, T indicate 1/4 wavelength of thermoluminescent material AlN or GaN
Thickness, (LH)3Indicate that high refractive index medium film and low refractive index dielectric film are alternately laminated 3 times.
In the multi-cavity optical interference film filter layer 1, half wave resonances cavity material is GaN or AlN or other big hot spectrums
The thin-film material of several, low extinction coefficient, relative to conventional optical medium material SiO2The hot light of the thermo-optical coeffecient of film, AlN and GaN
Coefficient is higher by an order of magnitude.When changing optical filter temperature by micro-heater 2, due to the folding of half wave resonances cavity material
It penetrates rate and relatively large variation occurs, so as to realize adjusting of the thin film center number of wavelengths nanometer to tens nanometer.It is described more
Chamber optical interference film filter layer 1 may be used existing technique and be prepared, and layers of material can be sequentially depositing, optical thickness
It is accurately controlled by on-line monitoring, thus can realize the filtering characteristic of flat-top narrowband according to application demand.Compared with silicon materials,
Although the thermo-optical coeffecient of AlN and GaN is slightly lower, the energy gap of AlN and GaN are very high, have relatively lower extinction coefficient, institute
Can obtain more low optical losses in spike interference filter, while wavelength tuning range or tuning power consumption remain to meet certain
The requirement of a little optical communication applications.
In addition, the Thermo-optic tunability filter can be applied to tunable optical receiver, tunable laser, DWDM
In optical performance monitor, light up/down multiplexer.
MEMS Thermo-optic tunability filters in the present embodiment are based on soi wafer, using MEMS Bulk micro machining systems
Make.Its main manufacturing process is as follows：1) soi wafer of high resistivity silicon device layer is aoxidized, surface grows silica
Layer；Photoetching is carried out to soi wafer upper surface, and carries out silicon dioxide etching, exposes the region for needing heavy doping；To exposing
Region carry out semiconductor heavy doping diffusion, obtain plus micro-heater 2, microtemperature sensor 3 and cantilever beam lead district；2) pass through
Metal sputtering, photoetching, the techniques such as wet etching make micro-heater 2, microtemperature sensor 3 in silicon chip upper surface and draw successively
Wire bonding disk 8；3) heat-insulated suspension girder construction is defined in soi wafer photomask surface, deep etching process is used in combination to etch soi wafer to covering
Silicon dioxide layer is buried, 4 structure of monocrystalline silicon hanging beam 6 and single-crystal silicon support film is produced；4) in the substrate of soi wafer lower surface
It makes etched features on layer by lithography, and is removed unwanted substrate layer to the buried layer two of soi wafer using etching or corrosion technology
Silicon oxide layer；The buried silicon dioxide layer layer of soi wafer is removed using silicon dioxide etching liquid；5) in single-crystal silicon support film 4
Upper and lower surface makes patterned multi-cavity optical interference film filter layer 1 and optical anti-reflective film 5 respectively using hard mask method,
In, electron beam evaporation process, sputtering technology or other films deposition work may be used in the multi-cavity optical interference film filter layer 1
It is prepared by skill.
Embodiment 2
As shown in Fig. 2 and Fig. 4~Fig. 5, the present invention provides a kind of MEMS Thermo-optic tunability filters of low optical losses, institute
It includes the multi-cavity that half wave resonances chamber uses AlN or GaN thermo-optic tunables dielectric thin-film material 11 to state MEMS Thermo-optic tunability filters
Optical interference film filter layer 1 and micro-heater 2 can adjust institute by controlling the operating current of the micro-heater 2
State the centre wavelength of MEMS Thermo-optic tunability filters.
As shown in Fig. 4~Fig. 5, when the multi-cavity optical interference film filter layer 1 has the case where enough mechanical strengths
Under, the MEMS Thermo-optic tunability filters in the present embodiment, including：Multi-cavity optical interference film filter layer 1, silicon substrate 7, thang-kng
Hole, micro-heater 2, microtemperature sensor 3 and lead pad 8.
The multi-cavity optical interference film filter layer 1 is formed on silicon substrate 7, and the silicon substrate 7 is etched with light hole,
Directly expose the multi-cavity optical interference film filter layer 1 at the light hole.The size of the light hole is more than working beam
Spot size.
It filters as shown in figure 5, the micro-heater 2 and microtemperature sensor 3 are made in the multi-cavity optical interference film
On layer 1, and except the hot spot of working beam, it is centrosymmetric distribution using working beam center as symmetric points, by drawing
Line is connected to lead pad 8.In the present embodiment, the micro-heater 2 is electric made of metal film strips or semiconductor film item
Heater is hindered, the microtemperature sensor 3 is the resistance temperature detector made of metal film strips or semiconductor film item, described
Microtemperature sensor 3 temperature signal of interferometric filter can be provided for the closed loop feedback of tuning wavelength.By controlling micro- add
The spectrum tune of the 1 centre wavelength 0nm~50nm of multi-cavity optical interference film filter layer may be implemented in the operating current of hot device 2
It is humorous.
As shown in Fig. 2, the multi-cavity optical interference film filter layer 1 includes using AlN or GaN thermo-optic tunable dielectric films
The half wave resonances chamber of material 11 and multilayer dielectric film 10 is alternately laminated forms, the multilayer dielectric film 10 is by high refractive index medium
Film and low refractive index dielectric film is alternately laminated forms.The material of the high refractive index medium film includes TiO2、Si3N4And Ta2O5In
One kind, the material of the low refractive index dielectric film includes SiO2。
The multi-cavity optical interference film filter layer 1 is to be interfered by the narrowband optical that N number of cascade optical interference chamber is formed
Optical filter, wherein N >=1.In addition, working as N>When 1, the band logical that light wave may be implemented in the multi-cavity optical interference film filter layer 1 is flat
Smoothization.
In addition, the multi-cavity optical interference film filter layer 1 can be optimized according to filtering characteristic demand, with 3 chambers
For structure, each film layer structure is arranged as：
air|(HL)34T(LH)3L(HL)34T(LH)3L(HL)34T(LH)3|air
Wherein, H indicates that 1/4 wavelength thickness of the high refractive index medium film in multilayer dielectric film 10, L indicate multilayer dielectric film
1/4 wavelength thickness of the low refractive medium film layer in 10, T indicate 1/4 wavelength thickness of thermoluminescent material AlN or GaN, (LH)3Table
Show that high refractive index medium film and low refractive index dielectric film are alternately laminated 3 times.
In the multi-cavity optical interference film filter layer 1, half wave resonances cavity material is GaN or AlN or other big hot spectrums
The thin-film material of several, low extinction coefficient, relative to conventional optical medium material SiO2The hot light of the thermo-optical coeffecient of film, AlN and GaN
Coefficient is higher by an order of magnitude.When changing optical filter temperature by micro-heater 2, due to the folding of half wave resonances cavity material
It penetrates rate and relatively large variation occurs, so as to realize adjusting of the thin film center number of wavelengths nanometer to tens nanometer.It is described more
Chamber optical interference film filter layer 1 may be used existing technique and be prepared, and layers of material can be sequentially depositing, and thickness passes through
On-line monitoring accurately controls, thus the filtering characteristic of flat-top narrowband can be realized according to application demand.Compared with silicon materials, although
The thermo-optical coeffecient of AlN and GaN is slightly lower, but the energy gap of AlN and GaN is very high, has relatively lower extinction coefficient, so
More low optical losses can be obtained in spike interference filter, while wavelength tuning range or tuning power consumption remain to meet certain light
The requirement of communications applications.
In addition, the Thermo-optic tunability filter can be applied to tunable optical receiver, tunable laser, DWDM
In optical performance monitor, light up/down multiplexer.
MEMS Thermo-optic tunabilities filter in the present embodiment can be based on soi wafer or body silicon substrate, using MEMS
Bulk micro machining makes, and by taking body silicon substrate as an example, main manufacturing process is as follows：1) electron beam evaporation process, sputtering are used
Technique or other thin film deposition processes prepare multi-cavity optical interference film filter layer 1 in the body surface of silicon；2) pass through gold
Belong to sputtering, photoetching, the techniques such as wet etching, 1 upper surface of multi-cavity optical interference film filter layer make successively micro-heater 2,
Microtemperature sensor 3 and lead pad 8；3) etched features are made by lithography in body silicon substrate lower surface, and utilizes etching or corrosion skill
Art removes unwanted body silicon substrate layer, until exposing the multi-cavity optical interference film filter layer 1, forms light hole.
As described above, the present invention provides a kind of MEMS Thermo-optic tunability filters of low optical losses, the hot light of MEMS
Tunable optic filter includes that half wave resonances chamber is thin using the multi-cavity optical interference of AlN or GaN thermo-optic tunables dielectric thin-film material 11
Membrane filtration photosphere 1 and micro-heater 2 can adjust the hot light of the MEMS by controlling the operating current of the micro-heater 2
The centre wavelength of tunable optic filter.The present invention uses the cavity material of AlN, GaN as half wave resonances chamber in FP chambers, both has
There is higher thermo-optical coeffecient, and there is lower extinction coefficient, the optics damage of narrow-band tunable filter can be greatly lowered
Consumption.The present invention can be effectively improved optical loss existing for existing MEMS thermo-optical tunabilities filter greatly and filter shape cannot meet
Using the problem of, have a good application prospect in optic communication, light sensing field.So the present invention effectively overcomes existing heat
Various shortcoming in optic tunable filter technology and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of MEMS Thermo-optic tunability filters of low optical losses, which is characterized in that the MEMS Thermo-optic tunabilities filtering
Device includes multi-cavity optical interference film filter layer and micro-heater, can be with by controlling the operating current of the micro-heater
Adjust the centre wavelength of the MEMS Thermo-optic tunabilities filter；Wherein, the multi-cavity optical interference film filter layer includes adopting
Replaced with the half wave resonances chamber and multilayer dielectric film of AlN the or GaN thermo-optic tunable dielectric thin-film materials with low extinction coefficient
It is laminated, the multilayer dielectric film is by high refractive index medium film and low refractive index dielectric film is alternately laminated forms；It is described it is micro- plus
Hot device is hung on about or over the multi-cavity optical interference film filter layer, while except the hot spot of working beam,
It is centrosymmetric distribution using working beam center as symmetric points, the micro-heater of metal film strips or semiconductor film item by being made
Resistance heater.
2. the MEMS Thermo-optic tunability filters of low optical losses according to claim 1, it is characterised in that：The multi-cavity
Optical interference film filter layer is the narrowband optical interferometric filter formed by N number of cascade optical interference chamber, wherein N >=1.
3. the MEMS Thermo-optic tunability filters of low optical losses according to claim 2, it is characterised in that：Work as N>When 1,
The band logical planarization of light wave may be implemented in the multi-cavity optical interference film filter layer.
4. the MEMS Thermo-optic tunability filters of low optical losses according to claim 1, it is characterised in that：The MEMS
Thermo-optic tunability filter further includes microtemperature sensor, and the microtemperature sensor is by metal film strips or semiconductor film item system
At resistance temperature detector, be located at working beam hot spot except, the microtemperature sensor can be frequency-modulated wave
Long closed loop feedback provides the temperature signal of interferometric filter.
5. the MEMS Thermo-optic tunability filters of low optical losses according to claim 1, it is characterised in that：Pass through control
The spectrum of the multi-cavity optical interference film filter layer centre wavelength 0nm~50nm may be implemented in the operating current of micro-heater
Tuning.
6. the MEMS Thermo-optic tunability filters of low optical losses according to claim 1, it is characterised in that：The multi-cavity
Optical interference film filter layer is formed on single-crystal silicon support film, and the single-crystal silicon support film passes through list with silicon substrate
Crystal silicon hanging beam connects, and the silicon substrate is etched with light hole, constitutes heat-insulated micro-structure to reduce heat transfer, to reduce electric heating
Tune power consumption.
7. the MEMS Thermo-optic tunability filters of low optical losses according to claim 6, it is characterised in that：The monocrystalline
The thickness of silicon support film is 3 μm~100 μm, and the backside deposition of the single-crystal silicon support film has optical anti-reflective film.
8. the MEMS Thermo-optic tunability filters of low optical losses according to claim 6, it is characterised in that：The thang-kng
The size in hole is more than the spot size of working beam.
9. the MEMS Thermo-optic tunability filters of low optical losses according to claim 1, it is characterised in that：The multi-cavity
Optical interference film filter layer is formed on silicon substrate, and the silicon substrate is etched with light hole, directly reveals at the light hole
Go out the multi-cavity optical interference film filter layer.
10. the MEMS Thermo-optic tunability filters of low optical losses according to claim 1, it is characterised in that：Described
It is multiple that Thermo-optic tunability filter is applied to tunable optical receiver, tunable laser, DWDM optical performance monitors, light up/down
With in device.
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| CN201510167742.8A CN104714311B (en) | 2015-04-09 | 2015-04-09 | MEMS thermo-optic tunable filter with low optical loss |
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| CN201510167742.8A CN104714311B (en) | 2015-04-09 | 2015-04-09 | MEMS thermo-optic tunable filter with low optical loss |
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| CN104714311B true CN104714311B (en) | 2018-07-31 |
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| CN112578494A (en) * | 2019-09-30 | 2021-03-30 | 福州高意光学有限公司 | Tunable optical filter |
| CN111580288B (en) * | 2020-06-11 | 2023-02-28 | 京东方科技集团股份有限公司 | Tunable thermo-optical filter, adjusting method and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601384A (en) * | 2003-06-19 | 2005-03-30 | 英特尔公司 | Thermally isolating optical devices |
| CN1864091A (en) * | 2003-10-07 | 2006-11-15 | 伊吉斯半导体公司 | Tunable optical filter with heater on a cte-matched transparent substrate |
| CN102087371A (en) * | 2010-12-10 | 2011-06-08 | 福州高意通讯有限公司 | Optical slice heating method and tunable FP (Fabry-Perot) filter |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601384A (en) * | 2003-06-19 | 2005-03-30 | 英特尔公司 | Thermally isolating optical devices |
| CN1864091A (en) * | 2003-10-07 | 2006-11-15 | 伊吉斯半导体公司 | Tunable optical filter with heater on a cte-matched transparent substrate |
| CN102087371A (en) * | 2010-12-10 | 2011-06-08 | 福州高意通讯有限公司 | Optical slice heating method and tunable FP (Fabry-Perot) filter |
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| Title |
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| Thermo-Optic Coefficients of 4H-SiC, GaN, and AlN for Ultraviolet to Infrared Regions up to 500℃;Naoki Watanabe等;《Japanese Journal of Applied Physics》;20121022;第112101-1页-第112101-3页 * |
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