CN104701122A - 产生纳米结晶石墨的独立式薄膜方法 - Google Patents

产生纳米结晶石墨的独立式薄膜方法 Download PDF

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Publication number
CN104701122A
CN104701122A CN201410726248.6A CN201410726248A CN104701122A CN 104701122 A CN104701122 A CN 104701122A CN 201410726248 A CN201410726248 A CN 201410726248A CN 104701122 A CN104701122 A CN 104701122A
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CN
China
Prior art keywords
free
film
standing film
standing
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410726248.6A
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English (en)
Chinese (zh)
Inventor
B.布伊斯塞
R.S.达内夫
K.S.萨德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
FEI Co
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV, FEI Co filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of CN104701122A publication Critical patent/CN104701122A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C01B32/205—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3114—Machining

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
CN201410726248.6A 2013-12-04 2014-12-04 产生纳米结晶石墨的独立式薄膜方法 Pending CN104701122A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13195596.5A EP2881970A1 (en) 2013-12-04 2013-12-04 Method of producing a freestanding thin film of nano-crystalline carbon
EP13195596.5 2013-12-04

Publications (1)

Publication Number Publication Date
CN104701122A true CN104701122A (zh) 2015-06-10

Family

ID=49752992

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410726248.6A Pending CN104701122A (zh) 2013-12-04 2014-12-04 产生纳米结晶石墨的独立式薄膜方法

Country Status (4)

Country Link
US (1) US9908778B2 (https=)
EP (2) EP2881970A1 (https=)
JP (1) JP6224573B2 (https=)
CN (1) CN104701122A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9953802B2 (en) * 2014-01-21 2018-04-24 Ramot At Tel-Aviv University Ltd. Method and device for manipulating particle beam
WO2017183697A1 (ja) * 2016-04-21 2017-10-26 株式会社カネカ 放射性同位元素製造用の支持基板、放射性同位元素製造用ターゲット板、及び支持基板の製造方法
CN107481913B (zh) * 2016-06-08 2019-04-02 清华大学 一种电子束加工系统
US20210087403A1 (en) * 2019-09-20 2021-03-25 Merck Patent Gmbh Pigments

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201133546A (en) * 2010-03-26 2011-10-01 Hon Hai Prec Ind Co Ltd Method for making transmission electron microscope grid
US20120261588A1 (en) * 2011-04-14 2012-10-18 Hon Hai Precision Industry Co., Ltd. Transmission electron microscope micro-grid

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2248645A1 (en) * 1999-04-07 2010-11-10 GrafTech International Holdings Inc. Flexible graphite article and method of manufacture
JP2005015325A (ja) * 2003-05-30 2005-01-20 Japan Science & Technology Agency レーザーアブレーション法による極平坦微結晶ダイヤモンド薄膜の作製方法
EP2091062A1 (en) 2008-02-13 2009-08-19 FEI Company TEM with aberration corrector and phase plate
EP2131385A1 (en) 2008-06-05 2009-12-09 FEI Company Hybrid phase plate
US7977633B2 (en) 2008-08-27 2011-07-12 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Phase plate, in particular for an electron microscope
JPWO2010090343A1 (ja) * 2009-02-05 2012-08-09 帝人株式会社 黒鉛化炭素片分散液およびその製造方法
CN101964291B (zh) * 2009-07-24 2012-03-28 清华大学 透射电镜微栅及其制备方法
US20110200787A1 (en) * 2010-01-26 2011-08-18 The Regents Of The University Of California Suspended Thin Film Structures
CA2789028C (en) * 2010-02-19 2016-01-05 Incubation Alliance, Inc. Carbon material and method for producing same
WO2012094634A2 (en) * 2011-01-07 2012-07-12 Dune Sciences, Inc. Functionalized carbon membranes
EP2485239A1 (en) 2011-02-07 2012-08-08 FEI Company Method for centering an optical element in a TEM comprising a contrast enhancing element
DE102011014399B4 (de) * 2011-03-18 2017-08-03 Stiftung Caesar Center Of Advanced European Studies And Research Phasenplatte, Verfahren zum Herstellen einer Phasenplatte sowie Elektronenmikroskop
JP5812342B2 (ja) * 2011-12-12 2015-11-11 東海カーボン株式会社 グラファイトフィルムの製造方法
JP6212050B2 (ja) * 2011-12-22 2017-10-11 スリーエム イノベイティブ プロパティズ カンパニー 高い光透過を備えた導電性物品
EP2626885A1 (en) * 2012-02-13 2013-08-14 FEI Company Forming a vitrified sample for an electron microscopy
EP2667399A1 (en) * 2012-05-23 2013-11-27 FEI Company Improved phase plate for a TEM
EP2704178B1 (en) 2012-08-30 2014-08-20 Fei Company Imaging a sample in a TEM equipped with a phase plate
JP6286270B2 (ja) 2013-04-25 2018-02-28 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ 透過型電子顕微鏡内で位相版を用いる方法
DE102013019297A1 (de) 2013-11-19 2015-05-21 Fei Company Phasenplatte für ein Transmissionselektronenmikroskop

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201133546A (en) * 2010-03-26 2011-10-01 Hon Hai Prec Ind Co Ltd Method for making transmission electron microscope grid
US20120261588A1 (en) * 2011-04-14 2012-10-18 Hon Hai Precision Industry Co., Ltd. Transmission electron microscope micro-grid

Also Published As

Publication number Publication date
EP2881971A1 (en) 2015-06-10
JP2015107913A (ja) 2015-06-11
US20160096734A2 (en) 2016-04-07
EP2881971B1 (en) 2017-01-04
US9908778B2 (en) 2018-03-06
JP6224573B2 (ja) 2017-11-01
EP2881970A1 (en) 2015-06-10
US20150151972A1 (en) 2015-06-04

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