CN104699293B - 检测器、多单元检测部件、光学光传感器、光学感测阵列和显示装置 - Google Patents

检测器、多单元检测部件、光学光传感器、光学感测阵列和显示装置 Download PDF

Info

Publication number
CN104699293B
CN104699293B CN201410723211.8A CN201410723211A CN104699293B CN 104699293 B CN104699293 B CN 104699293B CN 201410723211 A CN201410723211 A CN 201410723211A CN 104699293 B CN104699293 B CN 104699293B
Authority
CN
China
Prior art keywords
light
cavity
wave
length coverage
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410723211.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN104699293A (zh
Inventor
薛九枝
克里希纳.巴尔拉姆
戴维.M.霍夫曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN104699293A publication Critical patent/CN104699293A/zh
Application granted granted Critical
Publication of CN104699293B publication Critical patent/CN104699293B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H10F30/2275—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier being a metal-semiconductor-metal [MSM] Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
CN201410723211.8A 2013-12-03 2014-12-03 检测器、多单元检测部件、光学光传感器、光学感测阵列和显示装置 Active CN104699293B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361911426P 2013-12-03 2013-12-03
US61/911,426 2013-12-03
US14/550,821 US9520510B2 (en) 2013-12-03 2014-11-21 Embedded optical sensors using transverse Fabry-Perot resonator as detectors
US14/550,821 2014-11-21

Publications (2)

Publication Number Publication Date
CN104699293A CN104699293A (zh) 2015-06-10
CN104699293B true CN104699293B (zh) 2019-06-11

Family

ID=52015871

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410723211.8A Active CN104699293B (zh) 2013-12-03 2014-12-03 检测器、多单元检测部件、光学光传感器、光学感测阵列和显示装置

Country Status (6)

Country Link
US (1) US9520510B2 (enExample)
EP (1) EP2884548B1 (enExample)
JP (1) JP6738122B2 (enExample)
KR (1) KR102304894B1 (enExample)
CN (1) CN104699293B (enExample)
TW (1) TWI625662B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9934418B2 (en) * 2015-12-03 2018-04-03 Synaptics Incorporated Display integrated optical fingerprint sensor with angle limiting reflector
US9663346B1 (en) * 2016-02-17 2017-05-30 Globalfoundries Inc. MEMs-based resonant FinFET
US10713458B2 (en) 2016-05-23 2020-07-14 InSyte Systems Integrated light emitting display and sensors for detecting biologic characteristics
KR102202342B1 (ko) * 2016-06-09 2021-01-12 인사이트 시스템즈 생물학적 특성을 검출하는 일체형 발광 디스플레이 및 센서
CN105932077A (zh) * 2016-06-17 2016-09-07 华进半导体封装先导技术研发中心有限公司 硅红外检光器的结构及其制作方法
CN106056099A (zh) * 2016-06-23 2016-10-26 京东方科技集团股份有限公司 一种指纹识别显示面板及显示装置
CN106383598A (zh) * 2016-08-26 2017-02-08 南京嘉凡电子科技有限公司 发射器定位系统
KR101683759B1 (ko) * 2016-08-29 2016-12-07 실리콘 디스플레이 (주) 지문 인식 센서 및 이를 포함하는 휴대용 표시장치
TWI612281B (zh) 2016-09-26 2018-01-21 財團法人工業技術研究院 干涉分光元件封裝裝置
US10141462B2 (en) * 2016-12-19 2018-11-27 Sunpower Corporation Solar cells having differentiated P-type and N-type architectures
US10002859B1 (en) 2017-06-26 2018-06-19 Globalfoundries Inc. Fin-FET resonant body transistor
US9899363B1 (en) 2017-06-26 2018-02-20 Globalfoundries Inc. Fin-FET resonant body transistor
CN107293607B (zh) * 2017-07-05 2019-09-27 京东方科技集团股份有限公司 光电探测结构及其制作方法、阵列基板、显示装置
CN107421681B (zh) * 2017-07-31 2019-10-01 京东方科技集团股份有限公司 一种压力传感器及其制作方法
CN107609542B (zh) * 2017-10-24 2021-01-26 京东方科技集团股份有限公司 光感器件、显示装置及指纹识别方法
TWI642175B (zh) * 2017-11-03 2018-11-21 新相光學股份有限公司 影像感測器及指紋辨識裝置之製造方法
CN108363993B (zh) * 2018-03-15 2020-12-04 京东方科技集团股份有限公司 指纹识别模组、显示装置及其制作方法
FR3083646B1 (fr) * 2018-07-09 2021-09-17 St Microelectronics Crolles 2 Sas Capteur d'images
KR102317639B1 (ko) 2018-12-07 2021-10-25 주식회사 엘지에너지솔루션 인서트 사출된 버스바 조립체를 포함하는 전지 모듈
CN109860310A (zh) * 2019-01-28 2019-06-07 三明学院 一种电压信号光电探测器
TWI704500B (zh) * 2019-11-14 2020-09-11 宏碁股份有限公司 指紋感測裝置以及指紋感測方法
DE102020122312B4 (de) 2020-08-26 2022-04-28 JENETRIC GmbH Vorrichtung zur Aufnahme von Abdrücken von Autopodien und ihre Verwendung
KR102717512B1 (ko) * 2023-06-29 2024-10-15 한국항공대학교산학협력단 빛의 편광에 선택성을 갖는 피드백 전계 효과 광트랜지스터, 이를 포함하는 광트랜지스터 배열 구조체 및 이를 포함하는 전자 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101622517A (zh) * 2007-03-01 2010-01-06 皇家飞利浦电子股份有限公司 光检测器装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668968A (en) 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US5289015A (en) * 1991-04-25 1994-02-22 At&T Bell Laboratories Planar fet-seed integrated circuits
JPH0618845A (ja) * 1992-07-03 1994-01-28 Casio Comput Co Ltd 液晶表示装置およびそれを用いた機器
GB9322246D0 (en) * 1993-10-28 1993-12-15 Hitachi Europ Ltd Improved metal-semiconductor-metal photodetector
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts
US5631490A (en) * 1995-01-11 1997-05-20 Lucent Technologies Inc. Metal semiconductor metal photodetectors
FR2803950B1 (fr) 2000-01-14 2002-03-01 Centre Nat Rech Scient Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif
JP2002151702A (ja) 2000-11-15 2002-05-24 Seiko Epson Corp 半導体装置及びその製造方法並びに電子機器
JP4574547B2 (ja) * 2002-10-22 2010-11-04 ユニヴァーシティー カレッジ カーディフ コンサルタンツ リミテッド 半導体光学装置
JP5094385B2 (ja) * 2004-03-22 2012-12-12 リサーチ ファウンデーション オブ ザ シティー ユニバーシティ オブ ニューヨーク 高応答性高帯域金属−半導体−金属光電デバイス
KR101107977B1 (ko) 2004-12-21 2012-01-25 재단법인서울대학교산학협력재단 광센싱 장치 및 이에 포함되는 광센서
WO2006091741A2 (en) * 2005-02-23 2006-08-31 Georgia Tech Research Corporation Edge viewing photodetector
US7957648B2 (en) 2005-02-28 2011-06-07 The Invention Science Fund I, Llc Electromagnetic device with integral non-linear component
US7619727B2 (en) 2006-06-07 2009-11-17 Raybit Systems Inc. Apparatus for detecting wavelength and measuring optical power
GB2446821A (en) * 2007-02-07 2008-08-27 Sharp Kk An ambient light sensing system
US8682116B2 (en) * 2007-08-08 2014-03-25 Infineon Technologies Ag Integrated circuit including non-planar structure and waveguide
JP2011007838A (ja) 2009-06-23 2011-01-13 Seiko Epson Corp 表示デバイス、表示システム、及び、表示制御方法
JP5940252B2 (ja) 2010-04-16 2016-06-29 株式会社半導体エネルギー研究所 表示装置
KR101084366B1 (ko) 2010-06-28 2011-11-17 광운대학교 산학협력단 패브리-패롯 구조를 기반으로 한 터치센서
KR102058390B1 (ko) * 2011-10-28 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
US8829633B2 (en) * 2012-05-03 2014-09-09 The Board Of Trustees Of The Leland Stanford Junior University Self-aligned semiconductor ridges in metallic slits as a platform for planar tunable nanoscale resonant photodetectors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101622517A (zh) * 2007-03-01 2010-01-06 皇家飞利浦电子股份有限公司 光检测器装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Self-aligned silicon fins in metallic slits as a platform for planar wavelength-selective nanoscale resonant photodetectors;Krishna C.Balram;《optics express》;20120919;第22738，22740页

Also Published As

Publication number Publication date
JP6738122B2 (ja) 2020-08-12
TW201523398A (zh) 2015-06-16
EP2884548A2 (en) 2015-06-17
US9520510B2 (en) 2016-12-13
TWI625662B (zh) 2018-06-01
KR102304894B1 (ko) 2021-09-24
EP2884548A3 (en) 2015-12-30
US20150155400A1 (en) 2015-06-04
CN104699293A (zh) 2015-06-10
EP2884548B1 (en) 2021-01-27
KR20150064694A (ko) 2015-06-11
JP2015109443A (ja) 2015-06-11

Similar Documents

Publication Publication Date Title
CN104699293B (zh) 检测器、多单元检测部件、光学光传感器、光学感测阵列和显示装置
US20210305440A1 (en) Single photon avalanche diode and manufacturing method, detector array, and image sensor
CN105723381B (zh) 光学指纹传感器
CN109863509B (zh) 光电传感器及其制备方法
US9217674B2 (en) Bolometric detector of an electromagnetic radiation in the terahertz range and array detection device comprising such detectors
CN102830859B (zh) 光学式触控面板及其制造方法以及光学式触控显示面板
CN102589712A (zh) 热式光检测器及其制造方法、热式光检测装置、电子仪器
CN104011517B (zh) 热释电型红外线传感器
WO2018150801A1 (ja) センサ、固体撮像装置及び電子装置
CN106022276A (zh) 指纹识别器件及其制作方法、显示器件、显示装置
US9217673B2 (en) High responsivity device for thermal sensing in a terahertz radiation detector
Liu et al. A Multichannel THz Detector Using Integrated Bow‐Tie Antennas
KR102058605B1 (ko) 광 검출기 및 이를 포함하는 이미지 센서
JP2010251496A (ja) イメージセンサー
Bartmann et al. Germanium nanowire microbolometer
CN110864805B (zh) 超宽带光谱探测装置和方法
CN111863912A (zh) 具有指纹识别功能的oled显示面板、显示装置及制备方法
CN109904273A (zh) 一种cmos spad光电器件的等效电路
CN115560875A (zh) 光学识别温度检测模组和显示装置
JP2015135264A (ja) 焦電型光検出器、焦電型光検出装置、電子機器
US12474207B2 (en) Light sensor and a method for manufacturing a light sensor
CN114383722B (zh) 光检测装置
US20250338031A1 (en) Light detection through enhanced electron emission
Khalilzade-Rezaie et al. Metal-oxide-semiconductor photocapacitor for sensing surface plasmon polaritons
JPH08181297A (ja) 赤外線検出器及び赤外線検出器アレイ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant