CN104699164B - Band-gap reference circuit - Google Patents
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Abstract
A kind of band-gap reference circuit, including the first PMOS, the second PMOS, the 3rd PMOS, the 4th PMOS, the first NMOS tube, the second NMOS tube, the first audion, the second audion, the 3rd audion, the first resistance, the second resistance, the 3rd resistance and the 4th resistance.The temperature coefficient of the base current of the second audion of technical scheme and the base current of the 3rd audion can be offset, the resistance value adjusting utilizing the first resistance and the second resistance flows into the electric current of outfan, make it have stationary temperature coefficient, so the reference voltage of band-gap reference circuit output also has stationary temperature coefficient.
Description
Technical field
The present invention relates to a kind of band-gap reference circuit.
Background technology
Along with developing rapidly of system integration technology (SOC), reference voltage source has become extensive, super
Indispensable basic circuit module in large scale integrated circuit and nearly all digital simulator system.Benchmark
Voltage source is the important component part of super large-scale integration and electronic system, can be widely applied to high-precision
Degree comparator, A/D and D/A converter, random access memories, flash memory and system integrated chip
In.It is true that high-performance reference voltage source directly affects performance and the precision of electronic system.
As it is shown in figure 1, existing band-gap reference circuit includes: the first PMOS MP1, the 2nd PMOS
Pipe MP2, the 3rd PMOS MP3, the first NMOS tube MN1, the second NMOS tube MN2,
First audion Q1, the second audion Q2, the first resistance R1, the second resistance R2 and the 3rd resistance R3.
The source electrode of the first PMOS MP1, the source electrode of the second PMOS MP2 and the 3rd PMOS
The source electrode of MP3 is suitable to input supply voltage VCC.
The grid of the first PMOS MP1 connects the drain electrode of the second PMOS MP2, the 2nd PMOS
The grid of pipe MP2, the grid of the 3rd PMOS MP3 and the drain electrode of the second NMOS tube MN2,
The drain electrode of the first PMOS MP1 connects the drain electrode of the first NMOS tube MN1, the first NMOS tube
The grid of MN1 and the grid of the second NMOS tube MN2.
The drain electrode of the 3rd PMOS MP3 connects first end of the 3rd resistance R3, described 3rd resistance R3
The first end as the outfan VOUT of described band-gap reference circuit.
The source electrode of the first NMOS tube MN1 connects colelctor electrode and second audion of the first audion Q1
The base stage of Q2.
The source electrode of the second NMOS tube MN2 connects the colelctor electrode of the second audion Q2, the first audion
The base stage of Q1 and first end of the first resistance R1.
The grounded emitter of the first audion Q1.
The emitter stage of the second audion Q2 connects first end of the second resistance R2.
Second end of the first resistance R1, second end of the second resistance R2 and second end of the 3rd resistance R3
Ground connection.
Band-gap reference circuit shown in Fig. 1 does not use operational amplifier, it is possible to achieve low noise, but,
The outfan VOUT of band-gap reference circuit cannot export the reference voltage with constant temperature coefficient.
Summary of the invention
The problem that the present invention solves is that existing band-gap reference circuit cannot export the base with constant temperature coefficient
Quasi-voltage.
For solving the problems referred to above, the present invention provides a kind of band-gap reference circuit, including: the first PMOS,
Second PMOS, the 3rd PMOS, the 4th PMOS, the first NMOS tube, the 2nd NMOS
Pipe, the first audion, the second audion, the 3rd audion, the first resistance, the second resistance, the 3rd electricity
Resistance and the 4th resistance；
The source electrode of described first PMOS, the source electrode of the second PMOS, the source electrode of the 3rd PMOS
Input supply voltage is suitable to the source electrode of the 4th PMOS；
The grid of described first PMOS connects the drain electrode of described second PMOS, the second PMOS
Grid, the grid of the 3rd PMOS, the grid of the 4th PMOS and the drain electrode of the second NMOS tube,
The drain electrode of described first PMOS connects the drain electrode of described first NMOS tube, the first NMOS tube
Grid and the grid of the second NMOS tube；
The drain electrode of described 3rd PMOS connects the first end of described 3rd resistance；
The drain electrode of described 4th PMOS connects the colelctor electrode of described 3rd audion；
The source electrode of described first NMOS tube connects the colelctor electrode of described first audion and the second audion
Base stage；
The source electrode of described second NMOS tube connects the colelctor electrode of described second audion, the first audion
Base stage, the first end of the first resistance and the base stage of the 3rd audion；
The grounded emitter of described first audion；
The emitter stage of described second audion connects the first end of described second resistance；
The emitter stage of described 3rd audion connects the first end of described 4th resistance；
Second end of described first resistance, the second end of the second resistance, second end and the 4th of the 3rd resistance
Second end ground connection of resistance；
The size of described second audion more than the size of described first audion, described second audion and
3rd audion equivalently-sized, described second PMOS and the 4th PMOS equivalently-sized, institute
The resistance value stating the second resistance and the 4th resistance is equal.
Optionally, described band-gap reference circuit also includes: the 5th resistance, the source of described first PMOS
Pole inputs described supply voltage by described 5th resistance.
Optionally, described band-gap reference circuit also includes: the 6th resistance, the source of described second PMOS
Pole inputs described supply voltage by described 6th resistance.
Optionally, described band-gap reference circuit also includes: the 7th resistance, the source of described 3rd PMOS
Pole inputs described supply voltage by described 7th resistance.
Optionally, described band-gap reference circuit also includes: the 8th resistance, the source of described 4th PMOS
Pole inputs described supply voltage by described 8th resistance.
The present invention also provides for a kind of band-gap reference circuit, including: the first PMOS, the second PMOS,
3rd PMOS, the 4th PMOS, the first audion, the second audion, the 3rd audion,
Four audions, the 5th audion, the 6th audion, the first resistance, the second resistance, the 3rd resistance and
Four resistance；
The source electrode of described first PMOS, the source electrode of the second PMOS, the source electrode of the 3rd PMOS
Input supply voltage is suitable to the source electrode of the 4th PMOS；
The grid of described first PMOS connects the drain electrode of described second PMOS, the second PMOS
Grid, the grid of the 3rd PMOS, the grid of the 4th PMOS, the colelctor electrode of the 5th audion
With the base stage of the 6th audion, the drain electrode of described first PMOS connects the current collection of described 4th audion
Pole, the base stage of the 4th audion and the base stage of the 5th audion；
The drain electrode of described 3rd PMOS connects the first end of described 3rd resistance；
The drain electrode of described 4th PMOS connects the colelctor electrode of described 6th audion；
The emitter stage of described 4th audion connects the colelctor electrode of described first audion and the second audion
Base stage；
The emitter stage of described 5th audion connects the colelctor electrode of described second audion, the first audion
Base stage, the first end of the first resistance and the base stage of the 3rd audion；
The emitter stage of described 6th audion connects the colelctor electrode of described 3rd audion；
The grounded emitter of described first audion；
The emitter stage of described second audion connects the first end of described second resistance；
The emitter stage of described 3rd audion connects the first end of described 4th resistance；
Second end of described first resistance, the second end of the second resistance, second end and the 4th of the 3rd resistance
Second end ground connection of resistance；
The size of described second audion more than the size of described first audion, described second audion and
3rd audion equivalently-sized, described 5th audion and the 6th audion equivalently-sized, described
Two PMOS and the 4th PMOS equivalently-sized, described second resistance and the resistance value of the 4th resistance
Equal.
Optionally, described band-gap reference circuit also includes: the 5th resistance, the source of described first PMOS
Pole inputs described supply voltage by described 5th resistance.
Optionally, described band-gap reference circuit also includes: the 6th resistance, the source of described second PMOS
Pole inputs described supply voltage by described 6th resistance.
Optionally, described band-gap reference circuit also includes: the 7th resistance, the source of described 3rd PMOS
Pole inputs described supply voltage by described 7th resistance.
Optionally, described band-gap reference circuit also includes: the 8th resistance, the source of described 4th PMOS
Pole inputs described supply voltage by described 8th resistance.
Compared with prior art, the base current and the three or three of the second audion of technical scheme
The temperature coefficient of the base current of pole pipe can be offset, and utilizes the resistance value of the first resistance and the second resistance to adjust
Throttle into the electric current of outfan so that it is there is stationary temperature coefficient, so band-gap reference circuit output
Reference voltage also has stationary temperature coefficient.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing band-gap reference circuit；
Fig. 2 is a structural representation of the band-gap reference circuit that the embodiment of the present invention provides；
Fig. 3 is another structural representation of the band-gap reference circuit that the embodiment of the present invention provides.
Detailed description of the invention
With continued reference to Fig. 1, prior art generally utilizes the first resistance R1 and the second resistance R2 defeated to regulate
Go out to hold the temperature coefficient of the output voltage of VOUT.
Concrete, the voltage Va of the colelctor electrode of the first audion Q1 and the colelctor electrode of the second audion Q2
Voltage Vb equal, the voltage Vc=VbeQ1-VbeQ2, VbeQ1 of the emitter stage of the second audion Q2
Being the base-emitter voltage of the first audion Q1, VbeQ2 is that the base stage of the second audion Q2 is sent out
Emitter voltage.Then, flow through the electric current I1=Vb/r1=VbeQ1/r1 of the first resistance R1, flow through the second resistance
The electric current I2=Vc/r1=(VbeQ1-VbeQ2) of R2/r1, r1 is the resistance value of the first resistance R1, r2
It it is the resistance value of the second resistance R2.
In the prior art, it is typically based on the theory of the electric current I=I1+I2 flowing into outfan VOUT, logical
The counteracting of the temperature coefficient of overcurrent I1 and electric current I2 realizes the electric current I of constant temperature coefficient.Concrete,
Electric current I1 has negative temperature coefficient, and electric current I2 has positive temperature coefficient, utilizes the first resistance R1 and second
The resistance value adjusting electric current I1 of resistance R2 and the temperature coefficient of electric current I2 so that electric current I1 and electric current I2
The counteracting of temperature coefficient, thus regulate the temperature coefficient of electric current I.But, at existing band-gap reference circuit
Work process in find, based on above-mentioned theory regulate after outfan VOUT reference voltage still without
Method has stationary temperature coefficient.
Inventor is to drawing discovery after the circuit studies shown in Fig. 1: electric current I ≠ I1+I2, but I=I1+
I2-IbQ2, IbQ2 are the base current of the second audion Q2.Based on this result of study, the application is real
Execute example and a kind of band-gap reference circuit is provided.
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The specific embodiment of the present invention is described in detail.
As in figure 2 it is shown, the band-gap reference circuit of the embodiment of the present invention includes: the first PMOS MP1,
Second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4, a NMOS
Pipe MN1, the second NMOS tube MN2, the first audion Q1, the second audion Q2, the three or three pole
Pipe Q3, the first resistance R1, the second resistance R2, the 3rd resistance R3 and the 4th resistance R4.
The source electrode of described first PMOS MP1, the source electrode of the second PMOS MP2, the 3rd PMOS
The source electrode of pipe MP3 and the source electrode of the 4th PMOS MP4 are suitable to input supply voltage VCC.
The grid of described first PMOS MP1 connect the drain electrode of described second PMOS MP2, the
The grid of two PMOS MP2, the grid of the 3rd PMOS MP3, the 4th PMOS MP4
Grid and the drain electrode of the second NMOS tube MN2, the drain electrode of described first PMOS MP1 connects institute
State the drain electrode of the first NMOS tube MN1, the grid of the first NMOS tube MN1 and the second NMOS tube
The grid of MN2.
The drain electrode of described 3rd PMOS MP3 connects first end of described 3rd resistance R3, the 3rd electricity
First end of resistance R3 is as the outfan VOUT of described band-gap reference circuit.
The drain electrode of described 4th PMOS MP4 connects the colelctor electrode of described 3rd audion Q3.
The source electrode of described first NMOS tube MN1 connects the colelctor electrode and second of described first audion Q1
The base stage of audion Q3.
The source electrode of described second NMOS tube MN2 connect the colelctor electrode of described second audion Q2, first
The base stage of audion Q1, first end of the first resistance R1 and the base stage of the 3rd audion Q3.
The grounded emitter of described first audion Q1.
The emitter stage of described second audion Q2 connects first end of described second resistance R2.
The emitter stage of described 3rd audion Q3 connects first end of described 4th resistance R4.
Second end of described first resistance R1, second end of the second resistance R2, the of the 3rd resistance R3
Two ends and the second end ground connection of the 4th resistance R4.
In foregoing circuit, the size of the second audion Q2 size more than described first audion Q1,
Second audion Q2's and the 3rd audion Q3 is equivalently-sized, the second PMOS MP2 and the 4th
PMOS MP4 equivalently-sized, the resistance value of described second resistance R2 and the 4th resistance R4 is equal.
Those skilled in the art are it is recognised that described second audion Q2 and the size of the 3rd audion Q3
Refer to that the area of audion, the size of the second PMOS MP2 and the 4th PMOS MP4 refer to
The breadth length ratio of metal-oxide-semiconductor.
In the band-gap reference circuit that the present embodiment provides, I=I1+I2-IbQ2+IbQ3, I are for flowing into outfan
The electric current of VOUT, I1 is the electric current flowing through the first resistance R1, and I2 is the electric current flowing through the second resistance R2,
IbQ2 is the base current of the second audion Q2, and IbQ3 is the base current of the 3rd audion Q3.
Equivalently-sized due to the second audion Q2 and the 3rd audion Q3, the second PMOS MP2
Equivalently-sized with the 4th PMOS MP4, the second resistance R2 and the resistance value phase of the 4th resistance R4
Deng, so, the base current IbQ2 and the base current IbQ3 of the 3rd audion Q3 of the second audion Q2
Temperature coefficient can offset, utilize the resistance value adjusting electric current I1 of the first resistance R1 and the second resistance R2
Temperature coefficient with electric current I2 so that the counteracting of the temperature coefficient of electric current I1 and electric current I2, thus obtain
The electric current I of constant temperature coefficient.Owing to flowing into the electric current I of outfan VOUT, there is stationary temperature coefficient,
So the reference voltage of outfan VOUT output also has stationary temperature coefficient.
With continued reference to Fig. 2, the band-gap reference circuit described in the present embodiment can also include: the 5th resistance R5,
6th resistance R6, the 7th resistance R7 and the 8th resistance R8.
The source electrode of the first PMOS MP1 inputs described supply voltage VCC by described 5th resistance R5.
The source electrode of the second PMOS MP2 inputs described supply voltage VCC by described 6th resistance R6.
The source electrode of the 3rd PMOS MP3 inputs described supply voltage VCC by described 7th resistance R7.
The source electrode of the 4th PMOS MP4 inputs described supply voltage VCC by described 8th resistance R8.
5th resistance R5, the 6th resistance R6, the 7th resistance R7 and the 8th resistance R8 can drop further
The noise of low band gaps reference circuit.
As it is shown on figure 3, the embodiment of the present invention also provides for a kind of band-gap reference circuit, including: a PMOS
Pipe MP1, the second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4,
One audion Q1, the second audion Q2, the 3rd audion Q3, the 4th audion Q4, the 5th audion
Q5, the 6th audion Q6, the first resistance R1, the second resistance R2, the 3rd resistance R3 and the 4th resistance
R4。
The source electrode of described first PMOS MP1, the source electrode of the second PMOS MP2, the 3rd PMOS
The source electrode of pipe MP3 and the source electrode of the 4th PMOS MP4 are suitable to input supply voltage VCC.
The grid of described first PMOS MP1 connect the drain electrode of described second PMOS MP2, the
The grid of two PMOS MP2, the grid of the 3rd PMOS MP3, the 4th PMOS MP4
Grid, the colelctor electrode of the 5th audion Q5 and the base stage of the 6th audion Q6, a described PMOS
The drain electrode of pipe MP1 connects the colelctor electrode of described 4th audion Q4, the base stage of the 4th audion Q4 and the
The base stage of five audion Q5；
The drain electrode of described 3rd PMOS MP3 connects first end of described 3rd resistance R3；
The drain electrode of described 4th PMOS MP4 connects the colelctor electrode of described 6th audion Q6；
The emitter stage of described 4th audion Q3 connects the colelctor electrode and the two or three of described first audion Q1
The base stage of pole pipe Q3；
The emitter stage of described 5th audion Q5 connect the colelctor electrode of described second audion Q2, the one or three
The base stage of pole pipe Q1, first end of the first resistance R1 and the base stage of the 3rd audion Q3；
The emitter stage of described 6th audion Q6 connects the colelctor electrode of described 3rd audion Q3；
The grounded emitter of described first audion Q1；
The emitter stage of described second audion Q2 connects the first end of described second resistance；
The emitter stage of described 3rd audion Q3 connects the first end of described 4th resistance；
Second end of described first resistance R1, second end of the second resistance R2, the of the 3rd resistance R3
Two ends and the second end ground connection of the 4th resistance R4.
In the band-gap reference circuit that the present embodiment provides, I=I1+I2-IbQ2-IbQ5+IbQ3+IbQ6, I
For flowing into the electric current of outfan VOUT, I1 is the electric current flowing through the first resistance R1, and I2 is for flowing through second
The electric current of resistance R2, IbQ2 is the base current of the second audion Q2, and IbQ3 is the 3rd audion Q3
Base current, IbQ5 is the base current of the 5th audion Q5, and IbQ6 is the 6th audion Q6's
Base current.
The size of the described second audion Q2 size more than described first audion Q1, the described 2nd 3
Pole pipe Q2's and the 3rd audion Q3 is equivalently-sized, described 5th audion Q5 and the 6th audion Q6
Equivalently-sized, described second PMOS MP2 and the 4th PMOS MP4 equivalently-sized, institute
The resistance value stating the second resistance R2 and the 4th resistance R4 is equal.
Equivalently-sized due to the second audion Q2 and the 3rd audion Q3, the second PMOS MP2
Equivalently-sized with the 4th PMOS MP4, the second resistance R2 and the resistance value phase of the 4th resistance R4
Deng, so, the base current IbQ2 and the base current IbQ3 of the 3rd audion Q3 of the second audion Q2
Temperature coefficient can offset, the base current IbQ5's and the 6th audion Q6 of the 5th audion Q5
Base current IbQ6 can offset, and utilizes the first resistance R1 and the resistance value adjusting electric current of the second resistance R2
I1 and the temperature coefficient of electric current I2 so that the counteracting of the temperature coefficient of electric current I1 and electric current I2, thus
Electric current I to constant temperature coefficient.Owing to flowing into the electric current I of outfan VOUT, there is stationary temperature system
Number, so the reference voltage of outfan VOUT output also has stationary temperature coefficient.
Band-gap reference circuit described in the present embodiment can also include: the 5th resistance R5, the 6th resistance R6,
7th resistance R7 and the 8th resistance R8.
The source electrode of the first PMOS MP1 inputs described supply voltage VCC by described 5th resistance R5.
The source electrode of the second PMOS MP2 inputs described supply voltage VCC by described 6th resistance R6.
The source electrode of the 3rd PMOS MP3 inputs described supply voltage VCC by described 7th resistance R7.
The source electrode of the 4th PMOS MP4 inputs described supply voltage VCC by described 8th resistance R8.
5th resistance R5, the 6th resistance R6, the 7th resistance R7 and the 8th resistance R8 can drop further
The noise of low band gaps reference circuit.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
The scope of protecting should be as the criterion with claim limited range.
Claims (10)
1. a band-gap reference circuit, it is characterised in that including: the first PMOS, the second PMOS,
3rd PMOS, the 4th PMOS, the first NMOS tube, the second NMOS tube, the one or three pole
Pipe, the second audion, the 3rd audion, the first resistance, the second resistance, the 3rd resistance and the 4th resistance；
The source electrode of described first PMOS, the source electrode of the second PMOS, the source electrode of the 3rd PMOS
Input supply voltage is suitable to the source electrode of the 4th PMOS；
The grid of described first PMOS connects the drain electrode of described second PMOS, the second PMOS
Grid, the grid of the 3rd PMOS, the grid of the 4th PMOS and the drain electrode of the second NMOS tube,
The drain electrode of described first PMOS connects the drain electrode of described first NMOS tube, the first NMOS tube
Grid and the grid of the second NMOS tube；
The drain electrode of described 3rd PMOS connects the first end of described 3rd resistance；
The drain electrode of described 4th PMOS connects the colelctor electrode of described 3rd audion；
The source electrode of described first NMOS tube connects the colelctor electrode of described first audion and the second audion
Base stage；
The source electrode of described second NMOS tube connects the colelctor electrode of described second audion, the first audion
Base stage, the first end of the first resistance and the base stage of the 3rd audion；
The grounded emitter of described first audion；
The emitter stage of described second audion connects the first end of described second resistance；
The emitter stage of described 3rd audion connects the first end of described 4th resistance；
Second end of described first resistance, the second end of the second resistance, second end and the 4th of the 3rd resistance
Second end ground connection of resistance；
The size of described second audion more than the size of described first audion, described second audion and
3rd audion equivalently-sized, described second PMOS and the 4th PMOS equivalently-sized, institute
The resistance value stating the second resistance and the 4th resistance is equal.
2. band-gap reference circuit as claimed in claim 1, it is characterised in that also include: the 5th resistance, institute
The source electrode stating the first PMOS inputs described supply voltage by described 5th resistance.
3. band-gap reference circuit as claimed in claim 1, it is characterised in that also include: the 6th resistance, institute
The source electrode stating the second PMOS inputs described supply voltage by described 6th resistance.
4. band-gap reference circuit as claimed in claim 1, it is characterised in that also include: the 7th resistance, institute
The source electrode stating the 3rd PMOS inputs described supply voltage by described 7th resistance.
5. band-gap reference circuit as claimed in claim 1, it is characterised in that also include: the 8th resistance, institute
The source electrode stating the 4th PMOS inputs described supply voltage by described 8th resistance.
6. a band-gap reference circuit, it is characterised in that including: the first PMOS, the second PMOS,
3rd PMOS, the 4th PMOS, the first audion, the second audion, the 3rd audion,
Four audions, the 5th audion, the 6th audion, the first resistance, the second resistance, the 3rd resistance and
Four resistance；
The source electrode of described first PMOS, the source electrode of the second PMOS, the source electrode of the 3rd PMOS
Input supply voltage is suitable to the source electrode of the 4th PMOS；
The grid of described first PMOS connects the drain electrode of described second PMOS, the second PMOS
Grid, the grid of the 3rd PMOS, the grid of the 4th PMOS, the colelctor electrode of the 5th audion
With the base stage of the 6th audion, the drain electrode of described first PMOS connects the current collection of described 4th audion
Pole, the base stage of the 4th audion and the base stage of the 5th audion；
The drain electrode of described 3rd PMOS connects the first end of described 3rd resistance；
The drain electrode of described 4th PMOS connects the colelctor electrode of described 6th audion；
The emitter stage of described 4th audion connects the colelctor electrode of described first audion and the second audion
Base stage；
The emitter stage of described 5th audion connects the colelctor electrode of described second audion, the first audion
Base stage, the first end of the first resistance and the base stage of the 3rd audion；
The emitter stage of described 6th audion connects the colelctor electrode of described 3rd audion；
The grounded emitter of described first audion；
The emitter stage of described second audion connects the first end of described second resistance；
The emitter stage of described 3rd audion connects the first end of described 4th resistance；
Second end of described first resistance, the second end of the second resistance, second end and the 4th of the 3rd resistance
Second end ground connection of resistance；
The size of described second audion more than the size of described first audion, described second audion and
3rd audion equivalently-sized, described 5th audion and the 6th audion equivalently-sized, described
Two PMOS and the 4th PMOS equivalently-sized, described second resistance and the resistance value of the 4th resistance
Equal.
7. band-gap reference circuit as claimed in claim 6, it is characterised in that also include: the 5th resistance, institute
The source electrode stating the first PMOS inputs described supply voltage by described 5th resistance.
8. band-gap reference circuit as claimed in claim 6, it is characterised in that also include: the 6th resistance, institute
The source electrode stating the second PMOS inputs described supply voltage by described 6th resistance.
9. band-gap reference circuit as claimed in claim 6, it is characterised in that also include: the 7th resistance, institute
The source electrode stating the 3rd PMOS inputs described supply voltage by described 7th resistance.
10. band-gap reference circuit as claimed in claim 6, it is characterised in that also include: the 8th resistance, institute
The source electrode stating the 4th PMOS inputs described supply voltage by described 8th resistance.
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| CN101105699A (en) * | 2007-08-10 | 2008-01-16 | 启攀微电子（上海）有限公司 | Output voltage adjustable band gap reference voltage circuit |
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| CN102681587A (en) * | 2012-05-23 | 2012-09-19 | 天津大学 | Low-temperature drifting reference voltage and reference current generating circuit |
| CN103197716A (en) * | 2013-03-29 | 2013-07-10 | 东南大学 | Band-gap reference voltage circuit for reducing offset voltage influence |
| CN103412601A (en) * | 2013-08-22 | 2013-11-27 | 上海宏力半导体制造有限公司 | Reference voltage providing circuit |
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2013
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| US5349286A (en) * | 1993-06-18 | 1994-09-20 | Texas Instruments Incorporated | Compensation for low gain bipolar transistors in voltage and current reference circuits |
| US6232829B1 (en) * | 1999-11-18 | 2001-05-15 | National Semiconductor Corporation | Bandgap voltage reference circuit with an increased difference voltage |
| CN101105699A (en) * | 2007-08-10 | 2008-01-16 | 启攀微电子（上海）有限公司 | Output voltage adjustable band gap reference voltage circuit |
| CN101995898A (en) * | 2009-08-21 | 2011-03-30 | 深圳艾科创新微电子有限公司 | High-order temperature compensating current reference source |
| CN102681587A (en) * | 2012-05-23 | 2012-09-19 | 天津大学 | Low-temperature drifting reference voltage and reference current generating circuit |
| CN103197716A (en) * | 2013-03-29 | 2013-07-10 | 东南大学 | Band-gap reference voltage circuit for reducing offset voltage influence |
| CN103412601A (en) * | 2013-08-22 | 2013-11-27 | 上海宏力半导体制造有限公司 | Reference voltage providing circuit |
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| CN104699164A (en) | 2015-06-10 |
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