CN104678273A - High-speed double-pin testing device for diode raw wafer - Google Patents
High-speed double-pin testing device for diode raw wafer Download PDFInfo
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- CN104678273A CN104678273A CN201510111796.2A CN201510111796A CN104678273A CN 104678273 A CN104678273 A CN 104678273A CN 201510111796 A CN201510111796 A CN 201510111796A CN 104678273 A CN104678273 A CN 104678273A
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- silicon wafer
- bare silicon
- shell fragment
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Abstract
The invention discloses a high-speed double-pin testing device for a diode raw wafer. The high-speed double-pin testing device comprises a first testing pin, a second testing pin, a raw wafer suction table for accommodating raw wafer chips to be tested, and a tester, wherein clips of the tester have clip contacts on the clips, and the clip contacts correspond to contacts on an air cylinder; when signals are tested by the tester, the contacts on the air cylinder driven by an electromagnetic valve are in contact with the clip contacts, the first testing pin is in contact with the single chip on the raw wafer to be tested to form a closed loop with the tester, so as to test the single chip on the raw wafer to be tested; after the testing, the contacts on the air cylinder driven by the electromagnetic valve are detached from the clip contacts to form a turn-off circuit; in a similar way, the electromagnetic valve drives the circuit where the second testing pin is located to form the closed loop, so as to test the chip under the second testing pin. Therefore, the high-speed double-pin testing device can test the two chips on the raw wafer, so as to greatly improve the testing efficiency of the raw wafer.
Description
Technical field
Patent of the present invention relates to a kind of diode bare silicon wafer high speed crosspointer proving installation.
Background technology
All the time, artificial sampling observation test or single needle is all adopted entirely to detect to the test of diode bare silicon wafer, a bare silicon wafer is dispersed with thousands of and even tens thousand of chips, adopt manual testing can only realize taking a sample test, whole tests of chip on whole bare silicon wafer cannot be carried out, test leakage can be caused, have influence on the quality of later process finished product, adopt existing single needle test probe platform, test single chips on bare silicon wafer at every turn, the position that bare silicon wafer suction sheet platform moves to next chips is automatically tested, because on bare silicon wafer, chip size is little, the accuracy requirement of bare silicon wafer being inhaled to the travel mechanism of sheet platform is higher, the mobile Fast Wearing that also can cause equipment frequently, adopt crosspointer to test if simple simultaneously, due to the characteristic of diode self, the damage testing inaccurate and test instrumentation can be caused.
Summary of the invention
In view of above-mentioned present situation, the object of this invention is to provide a kind of diode bare silicon wafer high speed crosspointer proving installation, effectively can realize high speed test to the chip on bare silicon wafer at a high speed.
For achieving the above object, technical solution of the present invention is, a kind of diode bare silicon wafer high speed crosspointer proving installation, comprising:
First testing needle and the second testing needle;
A bare silicon wafer inhales sheet platform, and this bare silicon wafer inhales sheet platform for placing bare silicon wafer chip to be measured;
A tester, this tester comprises installing plate, and the shell fragment cross-over block that installing plate is arranged, it is arranged with to both sides extend shell fragment and on two shrapnel contacts, the side corresponding with two shrapnel contacts is arranged with contact mount pad, one end of each contact mount pad is provided with two contacts corresponding with shrapnel contact, the contact mount pad other end is connected with cylinder, with the first inlet suction port and the second inlet suction port on described cylinder, also comprise on installing plate and solenoid valve is installed, with the first joint on described solenoid valve, second joint and gas source connector, the first described joint is connected with the first inlet suction port on cylinder and the second inlet suction port respectively by tracheae with the second joint, described gas source connector is connected with external source of the gas by tracheae, during test, two shrapnel contacts are connected with one end of the first testing needle and the second testing needle with the electrode tip that two contacts form, first testing needle contacts with the bare silicon wafer chip to be measured that bare silicon wafer is inhaled on sheet platform with the other end of the second testing needle.Therefore, when giving test instrumentation test signal, solenoid-driven cylinder band moving contact contacts with shrapnel contact, and the single chips on the first testing needle, bare silicon wafer to be measured and tester form closed-loop path, realize the test to chips single on bare silicon wafer to be measured, after test terminates, solenoid-driven cylinder band moving contact and shrapnel contact depart from, and form disconnecting circuit, in like manner, the circuit at solenoid-driven second testing needle place forms closed-loop path, tests the chip immediately below the second testing needle.
In the present invention, involved tester is a platform with X/Y/Z tri-direction motions.
Further, described shell fragment is arranged on shell fragment cross-over block, and this shell fragment cross-over block is insulating material.
Further, described shell fragment is arranged on shell fragment erecting frame, and this shell fragment erecting frame is L-type.
Further. described shell fragment is T-shaped.
The effect that the present invention has is, devises the wafer prober be specifically designed on test bare silicon wafer, by high speed crosspointer proving installation, effectively can realize high speed test to a fairly large number of chip on bare silicon wafer at a high speed.Ensure that whole tests of chip on bare silicon wafer, without test leakage, and the quality of later process finished product.Solve Traditional Man test can only complete and take a sample test, single needle testing efficiency is low, easy test leakage, and mobile test also can cause the Fast Wearing of equipment frequently.
Accompanying drawing explanation
Fig. 1 a, b are schematic diagram of the present invention;
Fig. 2 is the solenoid valve schematic diagram in Fig. 1;
Fig. 3 is shell fragment on the shell fragment cross-over block in Fig. 1 and shrapnel contact schematic diagram.
Embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
See Fig. 1 to diagram 3, described tester, comprise installing plate 5, and the shell fragment erecting frame 6 that installing plate 5 is arranged, shell fragment erecting frame 6 described in the present embodiment is L-type, in described shell fragment erecting frame 6 side, shell fragment cross-over block 7 is installed, described shell fragment cross-over block 7 is insulating material, this shell fragment cross-over block 7 side is arranged with the first shell fragment 8 and the second shell fragment 8-1 extended to both sides, and the first shrapnel contact 9 and the second shrapnel contact 9-1 of upper riveted joint, the first described shell fragment 8 and the second shell fragment 8-1 are T-shaped, the side corresponding with the first shrapnel contact 9 on the first shell fragment 8 and the second shell fragment 8-1 and the second shrapnel contact 9-1 is arranged with the first contact mount pad 11 and the second contact mount pad 11-1, this the first contact mount pad 11 and second mount pad 11-1 one end, contact are provided with first contact 10 and the second contact 10-1 corresponding with the first shrapnel contact 9 and the second shrapnel contact 9-1, first contact mount pad 11 is connected the first cylinder Connection Block 12 and the second cylinder Connection Block 12-1 with the second contact mount pad 11-1 other end, be connected with the first cylinder 13 and the second cylinder 13-1 with the second cylinder Connection Block 12 by the first cylinder Connection Block 12, on the first described cylinder 13 and the second cylinder 13-1 respectively with the first inlet suction port 14, second inlet suction port 15 and the 3rd inlet suction port 14-1, 4th inlet suction port 15-1, also comprise on installing plate 5 and first solenoid valve 17 and the second solenoid valve 17-1 is installed, respectively with the first joint 16 on the first described solenoid valve 17 and the second solenoid valve 17, second joint 19 and the 3rd joint 16-1 and the 4th joint 19-1, the first described joint 16, second joint 19 and the 3rd joint 16-1, 4th joint 19-1 is respectively by the first inlet suction port 14 on tracheae and the first cylinder 13, the 3rd inlet suction port 14-1 on second inlet suction port 15 and the 2nd 13-1, 4th inlet suction port 15-1 connects, described electric first solenoid valve 17 and the second solenoid valve 17-1 are provided with the first gas source connector 18 and the second gas source connector 18-1, this first gas source connector 18 is connected with external source of the gas respectively by tracheae with the second gas source connector 18-1.
Bare silicon wafer of the present invention inhale sheet platform 3 be arranged on there are X/Y/Z tri-directions motions tester platform on, by contacting of the lifting of tester platform Z-direction and the first testing needle 1 and the second testing needle 2, by the motion of X/Y/Z axle, bare silicon wafer chip 4 to be measured can be moved to the first testing needle 1 to contact with immediately below the second testing needle 2, when the first testing needle 1 contacts with chip, first solenoid valve 17 action, gas flows through the first inlet suction port 14 by the first joint 16 and enters the first cylinder 13, first cylinder band moving contact 10 contacts with shrapnel contact 9, by chip, first testing needle 1 and tester conducting, realize the test of chip immediately below the first testing needle 1, after test terminates, first solenoid valve 17 action, gas flows through the first inlet suction port 15 by the first joint 19 and enters the first cylinder 13, first cylinder drives the first contact 10 and the first shrapnel contact 9 to depart from, by chip, first testing needle 1 and tester disconnect, simultaneously, when second testing needle 2 contacts with chip, second solenoid valve 17-1 action, gas flows through the second inlet suction port 14-1 by the first joint 16-1 and enters the second cylinder 13-1, second cylinder band moving contact 10-1 contacts with the second shrapnel contact 9-1, by chip, second test point 2 and tester conducting, realize the test of chip immediately below the second test point 2, greatly can reduce bare silicon wafer suction sheet platform 3 and be arranged on the running precision with X/Y/Z tri-direction run durations and platform, substantially increase the testing efficiency of chip, also test while can realizing four chips according to the method, and even the test of multiple chip.
When giving test instrumentation test signal, solenoid-driven cylinder band moving contact contacts with shrapnel contact, single chips on first testing needle 1, bare silicon wafer to be measured and tester form closed-loop path, realize the test to chips single on bare silicon wafer to be measured, after test terminates, solenoid-driven cylinder band moving contact and shrapnel contact depart from, form disconnecting circuit, in like manner, the circuit at solenoid-driven second testing needle 2 place forms closed-loop path, tests the chip immediately below the second testing needle 2.
Claims (5)
1. a diode bare silicon wafer high speed crosspointer proving installation, is characterized in that, comprising:
First testing needle (1) and the second testing needle (2);
A bare silicon wafer inhales sheet platform (3), and this bare silicon wafer inhales sheet platform (3) for placing bare silicon wafer chip (4) to be measured;
A tester, this tester comprises installing plate (5), and the upper shell fragment cross-over block (7) arranged of installing plate (5), it is arranged with to both sides extend shell fragment (8) and on two shrapnel contacts (9), the side corresponding with two shrapnel contacts (9) is arranged with contact mount pad (11), one end of each contact mount pad (11) is provided with two contacts (10) corresponding with shrapnel contact (9), contact mount pad (11) other end is connected with cylinder (13), with the first inlet suction port (14) and the second inlet suction port (15) on described cylinder (13), also comprise on installing plate (5) and solenoid valve (17) is installed, with the first joint (16) on described solenoid valve (17), second joint (19) and gas source connector (18), described the first joint (16) is connected with the first inlet suction port (14) on cylinder (13) and the second inlet suction port (15) respectively by tracheae with the second joint (19), described gas source connector (18) is connected with external source of the gas by tracheae, during test, two shrapnel contacts (9) are connected with one end of the first testing needle (1) and the second testing needle (2) with the electrode tip that two contacts (10) form, first testing needle (1) contacts with the bare silicon wafer chip (4) to be measured that bare silicon wafer is inhaled on sheet platform (3) with the other end of the second testing needle (2).
2. a kind of diode bare silicon wafer high speed crosspointer proving installation according to claim 1, is characterized in that, described tester is a platform with X/Y/Z tri-direction motions.
3. a kind of diode bare silicon wafer high speed crosspointer proving installation according to claim 1, it is characterized in that, described shell fragment (8) is arranged on shell fragment cross-over block (7), and this shell fragment cross-over block (7) is insulating material.
4. a kind of diode bare silicon wafer high speed crosspointer proving installation according to claim 1, it is characterized in that, described shell fragment (8) is arranged on shell fragment erecting frame (6), and this shell fragment erecting frame (6) is L-type.
5. a kind of diode bare silicon wafer high speed crosspointer proving installation according to claim 1. it is characterized in that, described shell fragment (8) is for T-shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510111796.2A CN104678273B (en) | 2015-03-13 | 2015-03-13 | A kind of diode bare silicon wafer high speed crosspointer test device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510111796.2A CN104678273B (en) | 2015-03-13 | 2015-03-13 | A kind of diode bare silicon wafer high speed crosspointer test device |
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| Publication Number | Publication Date |
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| CN104678273A true CN104678273A (en) | 2015-06-03 |
| CN104678273B CN104678273B (en) | 2017-09-29 |
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| CN201510111796.2A Active CN104678273B (en) | 2015-03-13 | 2015-03-13 | A kind of diode bare silicon wafer high speed crosspointer test device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10275835A (en) * | 1997-03-31 | 1998-10-13 | Nec Corp | Wafer test device |
| CN1790042A (en) * | 2005-12-05 | 2006-06-21 | 深圳市矽电半导体设备有限公司 | Multiplex test method for semiconductor wafer and multiplex test probe station therefor |
| US7573276B2 (en) * | 2006-11-03 | 2009-08-11 | Micron Technology, Inc. | Probe card layout |
| CN102509709A (en) * | 2011-09-02 | 2012-06-20 | 致茂电子(苏州)有限公司 | Point measurement device for LED (light-emitting diode) crystalline grain point measurement equipment |
| CN104101744A (en) * | 2013-04-10 | 2014-10-15 | 佛山市国星半导体技术有限公司 | Probe clamp, and LED rapid lightening testing apparatus and method |
-
2015
- 2015-03-13 CN CN201510111796.2A patent/CN104678273B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10275835A (en) * | 1997-03-31 | 1998-10-13 | Nec Corp | Wafer test device |
| CN1790042A (en) * | 2005-12-05 | 2006-06-21 | 深圳市矽电半导体设备有限公司 | Multiplex test method for semiconductor wafer and multiplex test probe station therefor |
| US7573276B2 (en) * | 2006-11-03 | 2009-08-11 | Micron Technology, Inc. | Probe card layout |
| CN102509709A (en) * | 2011-09-02 | 2012-06-20 | 致茂电子(苏州)有限公司 | Point measurement device for LED (light-emitting diode) crystalline grain point measurement equipment |
| CN104101744A (en) * | 2013-04-10 | 2014-10-15 | 佛山市国星半导体技术有限公司 | Probe clamp, and LED rapid lightening testing apparatus and method |
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| CN104678273B (en) | 2017-09-29 |
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Address after: No. 165, middle section of Hebei Avenue, seaport area, Qinhuangdao, Hebei Province Patentee after: Qinhuangdao audio-visual Machinery Research Institute Co., Ltd. Address before: No. 165, middle section of Hebei Avenue, seaport area, Qinhuangdao, Hebei Province Patentee before: Qinhuangdao Video-Audio Machinery Inst. |