CN104678273B - A kind of diode bare silicon wafer high speed crosspointer test device - Google Patents
A kind of diode bare silicon wafer high speed crosspointer test device Download PDFInfo
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- CN104678273B CN104678273B CN201510111796.2A CN201510111796A CN104678273B CN 104678273 B CN104678273 B CN 104678273B CN 201510111796 A CN201510111796 A CN 201510111796A CN 104678273 B CN104678273 B CN 104678273B
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- silicon wafer
- bare silicon
- test
- shell fragment
- contact
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[Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 239000011257 shell materials Substances 0.000 claims abstract description 36
- 230000000875 corresponding Effects 0.000 claims abstract description 7
- 239000007789 gases Substances 0.000 claims description 15
- 239000011810 insulating materials Substances 0.000 claims description 3
- 239000000203 mixtures Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000005755 formation reactions Methods 0.000 abstract description 5
- 238000010586 diagrams Methods 0.000 description 3
- 238000000034 methods Methods 0.000 description 2
- 239000003570 air Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering processes Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Abstract
Description
Technical field
Patent of the present invention is related to a kind of diode bare silicon wafer high speed crosspointer test device.
Background technology
All the time, the test of diode bare silicon wafer is all surveyed using artificial sampling observation test or single needle full inspection, a bare crystalline Thousands of or even tens thousand of chips are dispersed with circle, can only be realized and taken a sample test using manual testing, it is impossible to carry out core on whole bare silicon wafer Whole tests of piece, can cause test leakage, have influence on the quality of later process finished product, test probe station using existing single needle, often Secondary to have tested single chip on bare silicon wafer, the position that bare silicon wafer suction piece platform moves to next chips automatically is tested, due to naked Chip size is small on wafer, and the required precision to the travel mechanism of bare silicon wafer suction piece platform is higher, and frequently movement can also cause to set Standby Fast Wearing, if simply tested using crosspointer simultaneously, due to the characteristic of diode itself, can cause test inaccurate And the damage of test instrumentation.
The content of the invention
In view of above-mentioned present situation, can be high it is an object of the invention to provide a kind of diode bare silicon wafer high speed crosspointer test device Speed effectively realizes high speed test to the chip on bare silicon wafer.
To achieve the above object, technical solution of the invention is that a kind of diode bare silicon wafer high speed crosspointer test is filled Put, including the first testing needle and the second testing needle, a bare silicon wafer suction piece platform, the bare silicon wafer suction piece platform is for placing to be measured naked Chip wafer;Wherein：
One tester, the tester includes the shell fragment cross-over block set on installing plate, and installing plate, symmetrically sets thereon The shell fragment of oriented both sides extension and two shrapnel contacts thereon, contact is arranged with two corresponding sides of shrapnel contact Mounting seat, one end of each contact mounting seat is provided with two contacts corresponding with shrapnel contact, the contact mounting seat other end with Cylinder is connected, and the first inlet suction port and the second inlet suction port is carried on described cylinder, in addition to electromagnetism is provided with installing plate The first joint, the second joint and gas source connector, the first described joint and the second joint difference are carried on valve, described magnetic valve Be connected by tracheae with the first inlet suction port and the second inlet suction port on cylinder, the gas source connector by tracheae with it is external Source of the gas is connected, during test, the electrode tip and the first testing needle and the second testing needle of two shrapnel contacts and two contacts composition One end is connected, and the first testing needle and the other end of the second testing needle are contacted with the bare silicon wafer chip to be measured on bare silicon wafer suction piece platform； Described tester, which is one, has the platform of tri- direction motions of X/Y/Z.Therefore, when to test instrumentation test signal, electricity Magnet valve drive cylinder band movable contact is contacted with shrapnel contact, the first testing needle, the single chip on bare silicon wafer to be measured and tester Closed-loop path is formed, after realizing that the test to single chip on bare silicon wafer to be measured, test terminate, solenoid-driven cylinder, which drives, to be touched Point departs from shrapnel contact, forms disconnecting circuit, similarly, and the circuit formation where the testing needle of solenoid-driven second is closed back Road, is tested the chip immediately below the second testing needle.
Further, described shell fragment is arranged on shell fragment cross-over block, and the shell fragment cross-over block is insulating materials.
Further, described shell fragment is arranged on shell fragment mounting bracket, and the shell fragment mounting bracket is L-type.
Further the shell fragment described in is T-shaped.
The present invention has the effect that, devises dedicated for the wafer prober on test bare silicon wafer, by double at a high speed Pin test device, effectively can realize high speed test to a fairly large number of chip on bare silicon wafer at a high speed.It ensure that on bare silicon wafer The quality of whole tests of chip, no test leakage, and later process finished product.Traditional Man test is solved to can be only done and take a sample test, it is single Pin testing efficiency is low, easy test leakage, and frequently mobile test can also cause the Fast Wearing of equipment.
Brief description of the drawings
Fig. 1 a, b are the schematic diagrames of the present invention;
Fig. 2 is the magnetic valve schematic diagram in Fig. 1；
Fig. 3 is the shell fragment and shrapnel contact schematic diagram on the shell fragment cross-over block in Fig. 1.
Embodiment
Embodiment, is described in further detail to the present invention below in conjunction with the accompanying drawings.
Referring to Fig. 1 to diagram 3, the shell fragment mounting bracket 6 set on described tester, including installing plate 5, and installing plate 5, Shell fragment mounting bracket 6 described in the present embodiment is L-type, and shell fragment cross-over block 7 is provided with the side of shell fragment mounting bracket 6, described Shell fragment cross-over block 7 be insulating materials, the side of shell fragment cross-over block 7 is arranged with the He of the first shell fragment 8 extended to both sides Second shell fragment 8-1, and the first shrapnel contact 9 and the second shrapnel contact 9-1 riveted thereon, the first described shell fragment 8 and second Shell fragment 8-1 is corresponding with the first shrapnel contact 9 and the second shrapnel contact 9-1 on the first shell fragment 8 and the second shell fragment 8-1 to be T-shaped Side be arranged with the first contact mounting seat 11 and the second contact mounting seat 11-1, the first contact mounting seat 11 and second touch Point mounting seat 11-1 one end is provided with first contact 10 and second corresponding with the first shrapnel contact 9 and the second shrapnel contact 9-1 Contact 10-1, the first contact mounting seat 11 and the second contact mounting seat 11-1 other ends connect the first cylinder connecting seat 12 and second Cylinder connecting seat 12-1, passes through the first cylinder connecting seat 12 and the second cylinder connecting seat 12 and the first cylinder 13 and the second cylinder The first inlet suction port 14, the second air inlet connecting being respectively provided with 13-1 connections, the first described cylinder 13 and the second cylinder 13-1 First magnetic valve 17 and are installed on first 15 and the 3rd inlet suction port 14-1, the 4th inlet suction port 15-1, in addition to installing plate 5 The first joint 16, the second joint 19 are respectively provided with two magnetic valve 17-1, the first described magnetic valve 17 and the second magnetic valve 17 With the 3rd joint 16-1 and the 4th joint 19-1, described the first joint 16, the second joint 19 and the 3rd joint 16-1, the 4th connect Head 19-1 is respectively by the first inlet suction port 14 on tracheae and the first cylinder 13, the second inlet suction port 15 and the 2nd 13-1 Set on 3rd inlet suction port 14-1, the 4th inlet suction port 15-1 connections, the electric magnetic valve 17-1 of first magnetic valve 17 and second There are the first gas source connector 18 and the second gas source connector 18-1, first gas source connector 18 and second gas source connector 18-1 passes through respectively Tracheae is connected with external source of the gas.
The bare silicon wafer suction piece platform 3 of the present invention is arranged on the tester platform with tri- direction motions of X/Y/Z, by surveying Lifting contact with the first testing needle 1 and the second testing needle 2 of instrument platform Z-direction is tried, by the motion of X/Y/Z axles, will can be treated Underface and contact that bare silicon wafer chip 4 moves to the first testing needle 1 and the second testing needle 2 are surveyed, when the first testing needle 1 connects with chip When touching, the first magnetic valve 17 is acted, and gas flows through the first inlet suction port 14 by the first joint 16 and enters the first cylinder 13, the first gas Cylinder band movable contact 10 is contacted with shrapnel contact 9, chip, the first testing needle 1 and tester is turned on, to realize the first testing needle 1 The test of underface chip, after test terminates, the first magnetic valve 17 is acted, and gas flows through the first inlet suction port by the first joint 19 15 enter the first cylinder 13, and the first cylinder drives the first contact 10 to depart from the first shrapnel contact 9, by chip, the first testing needle 1 Disconnected with tester, meanwhile, when the second testing needle 2 is contacted with chip, the second magnetic valve 17-1 actions, gas is by the first joint 16-1 flows through the second inlet suction port 14-1 into the second cylinder 13-1, the second cylinder band movable contact 10-1 and the second shrapnel contact 9- 1 contact, chip, the second test point 2 and tester are turned on, to realize the test of the underface chip of the second test point 2, can be contracted significantly Subtract bare silicon wafer suction piece platform 3 and be arranged on the running precision with tri- direction run durations of X/Y/Z and platform, substantially increase chip Testing efficiency, tested while can also realizing four chips according to the method, so multiple chips test.
When to test instrumentation test signal, solenoid-driven cylinder band movable contact is contacted with shrapnel contact, the first test Pin 1, the single chip on bare silicon wafer to be measured and tester formation closed-loop path, realize the survey to single chip on bare silicon wafer to be measured Examination, after test terminates, solenoid-driven cylinder band movable contact departs from shrapnel contact, forms disconnecting circuit, similarly, and magnetic valve drives Circuit formation closed-loop path where dynamic second testing needle 2, is tested the chip immediately below the second testing needle 2.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510111796.2A CN104678273B (en) | 2015-03-13 | 2015-03-13 | A kind of diode bare silicon wafer high speed crosspointer test device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510111796.2A CN104678273B (en) | 2015-03-13 | 2015-03-13 | A kind of diode bare silicon wafer high speed crosspointer test device |
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| CN104678273A CN104678273A (en) | 2015-06-03 |
| CN104678273B true CN104678273B (en) | 2017-09-29 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10275835A (en) * | 1997-03-31 | 1998-10-13 | Nec Corp | Wafer test device |
| CN1790042A (en) * | 2005-12-05 | 2006-06-21 | 深圳市矽电半导体设备有限公司 | Multiplex test method for semiconductor wafer and multiplex test probe station therefor |
| US7573276B2 (en) * | 2006-11-03 | 2009-08-11 | Micron Technology, Inc. | Probe card layout |
| CN102509709A (en) * | 2011-09-02 | 2012-06-20 | 致茂电子(苏州)有限公司 | Point measurement device for LED (light-emitting diode) crystalline grain point measurement equipment |
| CN104101744A (en) * | 2013-04-10 | 2014-10-15 | 佛山市国星半导体技术有限公司 | Probe clamp, and LED rapid lightening testing apparatus and method |
-
2015
- 2015-03-13 CN CN201510111796.2A patent/CN104678273B/en active IP Right Grant
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10275835A (en) * | 1997-03-31 | 1998-10-13 | Nec Corp | Wafer test device |
| CN1790042A (en) * | 2005-12-05 | 2006-06-21 | 深圳市矽电半导体设备有限公司 | Multiplex test method for semiconductor wafer and multiplex test probe station therefor |
| US7573276B2 (en) * | 2006-11-03 | 2009-08-11 | Micron Technology, Inc. | Probe card layout |
| CN102509709A (en) * | 2011-09-02 | 2012-06-20 | 致茂电子(苏州)有限公司 | Point measurement device for LED (light-emitting diode) crystalline grain point measurement equipment |
| CN104101744A (en) * | 2013-04-10 | 2014-10-15 | 佛山市国星半导体技术有限公司 | Probe clamp, and LED rapid lightening testing apparatus and method |
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|---|---|
| CN104678273A (en) | 2015-06-03 |
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Address after: No. 165, middle section of Hebei Avenue, seaport area, Qinhuangdao, Hebei Province Patentee after: Qinhuangdao audio-visual Machinery Research Institute Co., Ltd. Address before: No. 165, middle section of Hebei Avenue, seaport area, Qinhuangdao, Hebei Province Patentee before: Qinhuangdao Video-Audio Machinery Inst. |