CN104662207A - 接触元件 - Google Patents
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Abstract
本发明涉及一种电接触元件的制造方法,其特征在于,所述接触元件基本上由基体制成,其中所述基体按所列顺序进行下述方法步骤:a.例如通过冷脱脂和/或热脱脂和/或电解脱脂对表面进行脱脂,b.清洗以除去任何存在的化学残留物,c.活化表面,d.沉积镍层,e.进一步清洗以除去任何存在的化学残留物,f.沉积镍层,g.进一步清洗以除去任何存在的化学残留物,h.沉积金层或金合金。
Description
技术领域
本发明涉及一种根据权利要求7的前序部分的电接触元件,以及一种根据权利要求1的前序部分这样的接触元件的制造方法。
背景技术
在插入式连接器的绝缘体中经常使用这样的接触元件。例如使用所谓的压接技术,将电导体电连接到接触元件。接触元件可以实施为插针或插孔接触件。
DE 699 17 7620 T2示出了用于电解沉积金属铁-钨合金的电解液槽。原则上,金或金合金可以沉积到这样的合金上。
DE 41 18 416 A1示出了用金涂覆预处理的金属体的电镀工艺(galvanicprocess)。在这样的工艺中使用脉冲电流,以避免在金属体上形成钝化层。
使用脉冲电流的电镀工艺是非常难以控制的以及具有显著的误差来源。在某些情况下,可能产生大量的废料。
发明内容
本发明的目的是提出一种易于实施并且提供高质量涂层的电镀镀金的方法。
所述目的是通过具有权利要求1特征部分的特征的方法来实现的。
在从属权利要求中阐述了本发明的优选实施例。
接触元件由金属基体构成,所述金属基体可以从固体材料铣下或可以使用冲压技术从扁平的金属片冲压。基体经常以块状材料或带状材料存在。
已发现黄铜或青铜作为基体材料是特别有利的,以及不同的层可以容易地电镀沉积在这样的基体上。
本领域技术人员已知如何将以块状材料或带状材料形式存在的基体进给到电镀工艺以进行电镀。
在第一方法步骤(a)中,将基体进行脱脂。为此,优选选择电解脱脂处理。或者可以选择冷脱脂、热脱脂或不同脱脂方法的组合。
在随后的方法步骤(b)中,优选使用蒸馏水清洗电解脱脂的基体,以除去任何可能存在的化学残留物。
随后,在进一步的方法步骤(c)中,活化经脱脂和清洗的基体的表面。为此,优选使用所谓的镍冲击法。该方法对本领域技术人员是公知的。例如在互联网上从RIAGAG公司可以获得该方法的说明。
在进一步的方法步骤(d)中,将镍合金电镀沉积到镍层上。在随后的方法步骤(e)中,再次清洗最初涂覆的基体。
在随后的方法步骤(f)中,将镍合金电镀沉积到镍层上。优选地,这是镍-钨或镍-钼或镍-钴或镍-锡合金。这些镍合金特别适合用于沉积金或金合金。随后,在随后的方法步骤(g)中再次清洗由此处理的基体。
在方法步骤(h)中,将金层或金合金现在电镀沉积到方法步骤(a)至(g)中制备的基体上。
优选的是,最后一次清洗上述镀金的接触元件(方法步骤(i)),以及随后在使用前使其干燥(方法步骤(j))。
优选地,上述电镀方法中是在直流电方法中进行的。这样的方法易于控制,因此仅产生少量废料部分。
在直流电方法中沉积镍合金涂层是特别有利的。这导致了特别光滑的镍合金涂层,其相应地是特别光滑金或金合金涂层的基础,即使金或金合金涂层是利用所谓的脉冲电流方法进行沉积的。
通过使用这里介绍的方法,可以获得平均粗糙度为小于0.1微米(μm)的金合金表面。具有低的表面粗糙度的接触元件使得可以大量的配合循环。此外,低的粗糙度减少了摩擦,其结果是接触表面(金层或金合金层)的磨损速率减慢。
使用上述方法制造的成品接触元件包括优选由黄铜或青铜制成的金属基体。基体具有在其上沉积的厚度为0.2微米(μm)至最高3微米(μm)、但是特别优选地厚度为0.2微米(μm)至最高1微米(μm)的镍涂层。该镍涂层相应地用厚度也为1微米(μm)至最高3微米(μm)的镍合金覆盖。最后,沉积厚度为约1微米(μm)并且平均粗糙度(Ra)为0.1微米(μm)或以下的金层或金合金层。
优选地,镍合金层(第二层)的硬度大于基体材料和/或在其上沉积的镍层(第一层)的硬度。结果,非常薄的金或金合金层是足够的。
在优选的实施例中,第二层的电阻小于基体和/或第一层的电阻。结果,非常薄且光滑的电镀的金的沉积或金合金的沉积变得容易。如果第二层的电阻为15-30毫欧姆(mΩ)是特别有利的。
附图说明
本发明的实施例的示例在附图中示出并在下文更详细地解释。
图1示出设置有不同的电镀涂层的主体的图。
具体实施方式
基体1由钢、黄铜或青铜制成。基体1的形状已大体上相当于成品接触元件的形状。接触元件可以是插针或插孔接触件,也可以是绝缘位移接触件。
第一层2被电镀沉积在基体上。这是镍层。第一层的层厚度为1-3微米(0.2-3μm)。第二层3沉积到该第一层2上。这是镍层。镍合金的层厚度为1-3微米(1-3μm)。最后,金层或金合金层4沉积在镍合金层上。该最后的层的厚度为0.1-2微米(0.1-2μm)或以下,平均粗糙度(Ra)为0.1微米(0.1μm)或以下。
附图标记列表
1基体
2第一层,镍层
3第二层,镍合金层
4最后的层,金层或金合金层
Claims (12)
1.一种电接触元件的制造方法,其特征在于,所述接触元件基本上由基体制成,其中所述基体按所列顺序进行下述方法步骤:
a.例如通过冷脱脂和/或热脱脂和/或电解脱脂,对表面进行脱脂,
b.清洗以除去任何存在的化学残留物,
c.活化所述表面,
d.沉积镍层,
e.进一步清洗以除去任何存在的化学残留物,
f.沉积镍合金,
g.进一步清洗以除去任何存在的化学残留物,
h.沉积金层或金合金。
2.根据权利要求1所述的电接触元件的制造方法,
其特征在于,
在所述方法步骤h之后接着进行以下进一步的方法步骤:
i.进一步清洗以除去任何存在的化学残留物,
j.干燥。
3.根据上述权利要求中任一项所述的电接触元件的制造方法,
其特征在于,
在方法步骤b中的所述表面的活化是通过镍冲击方法来实现的。
4.根据上述权利要求中任一项所述的电接触元件的制造方法,
其特征在于,
在方法步骤f中的镍合金为镍-钨或镍-钼或镍-钴或镍-锡合金。
5.根据上述权利要求中任一项所述的电接触元件的制造方法,
其特征在于,
所述基体由钢或铜合金、例如黄铜或青铜制成。
6.根据上述权利要求中任一项所述的电接触元件的制造方法,
其特征在于,
在方法步骤d和/或f和/或h中的所述合金是使用直流法沉积的。
7.一种电接触元件,
其是从由诸如黄铜或青铜的铜合金制成的基体形成的,
其中,所述基体涂覆有第一层、层厚度为0.2-3微米的镍层,
其中,所述第一层涂覆有第二层、层厚度为0.2-3微米的镍合金,
其中,所述第二层涂覆有金层或金合金。
8.根据权利要求7所述的电接触元件,
其特征在于,
所述金层或金合金层的层厚度为0.1-2微米。
9.根据权利要求7所述的电接触元件,其特征在于,所述金层或金合金层的平均粗糙度(Ra)为0.1微米或0.1微米以下。
10.根据权利要求7-9中任一项所述的电接触元件,其特征在于,所述第二层的硬度大于所述基体和/或所述第一层的硬度。
11.根据权利要求7-10中任一项所述的电接触元件,其特征在于,所述第二层的电阻小于所述基体和/或所述第一层的电阻。
12.根据权利要求7-11中任一项所述的电接触元件,其特征在于,所述第二层的电阻为15-30毫欧姆。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102012109057.2 | 2012-09-26 | ||
DE102012109057A DE102012109057B3 (de) | 2012-09-26 | 2012-09-26 | Verfahren zur Herstellung eines elektrischen Kontaktelements und elektrisches Kontaktelement |
PCT/DE2013/100280 WO2014048414A1 (de) | 2012-09-26 | 2013-07-31 | Elektrisches kontaktelement |
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CN104662207A true CN104662207A (zh) | 2015-05-27 |
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CN201380049512.0A Pending CN104662207A (zh) | 2012-09-26 | 2013-07-31 | 接触元件 |
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US (1) | US20150284866A1 (zh) |
EP (1) | EP2900849A1 (zh) |
CN (1) | CN104662207A (zh) |
DE (1) | DE102012109057B3 (zh) |
WO (1) | WO2014048414A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107447237A (zh) * | 2016-05-30 | 2017-12-08 | 滑动环及设备制造有限公司 | 具有降低的接触噪声的滑环 |
CN107921472A (zh) * | 2015-07-15 | 2018-04-17 | 思力柯集团 | 电沉积方法和经涂覆的组件 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102013109400A1 (de) * | 2013-08-29 | 2015-03-05 | Harting Kgaa | Kontaktelement mit Goldbeschichtung |
DE102014019751A1 (de) | 2014-12-15 | 2016-06-16 | Harting Kgaa | Nickel-Wolfram-Legierung |
DE102014118593A1 (de) | 2014-12-15 | 2016-06-16 | Harting Kgaa | Nickel-Wolfram-Legierung |
WO2016095895A1 (de) | 2014-12-15 | 2016-06-23 | Harting Ag & Co. Kg | Verfahren zur abscheidung einer nickel-wolfram-legierung auf ein elektrisches kontaktelement |
CN105984177B (zh) * | 2015-02-17 | 2019-01-22 | 西门子公司 | 复合镀膜、其制备方法和电子元件 |
DE102015206314B4 (de) | 2015-04-09 | 2018-06-28 | Il-Metronic Sensortechnik Gmbh | Verfahren zur Herstellung einer Glasdurchführung mit Kontaktstiften und Kontaktstifte für Glasdurchführungen |
DE102017002150A1 (de) * | 2017-03-06 | 2018-09-06 | Rosenberger Hochfrequenztechnik Gmbh & Co. Kg | Elektrisches Kontaktelement |
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US20050196634A1 (en) * | 2004-03-05 | 2005-09-08 | Dowa Mining Co., Ltd. | Metal member and electric contact using same |
CN101978096A (zh) * | 2008-03-20 | 2011-02-16 | 阿托特希德国有限公司 | Ni-P层系统及其制备方法 |
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JPH03191084A (ja) * | 1989-12-19 | 1991-08-21 | Nippon Mining Co Ltd | 耐摩耗性に優れた金めっき材 |
DE4118416A1 (de) * | 1990-06-11 | 1991-12-12 | Feinmetall Gmbh | Verfahren und vorrichtung zum beschichten von teilen, insbesondere metallteilen |
DE4119102A1 (de) * | 1991-06-10 | 1992-12-17 | Henkel Kgaa | Verfahren zur vorbehandlung von buntmetall-oberflaechen vor einer galvanischen metallbeschichtung |
DE19617488C2 (de) * | 1996-05-02 | 2002-03-07 | Gustav Krueger | Kontaktelement für lösbare elektrische Verbindungen |
US6045682A (en) * | 1998-03-24 | 2000-04-04 | Enthone-Omi, Inc. | Ductility agents for nickel-tungsten alloys |
WO2001063007A1 (fr) * | 2000-02-24 | 2001-08-30 | Ibiden Co., Ltd. | Revetement a base de nickel et d'or presentant une grande resistance a la corrosion |
DE10138204B4 (de) * | 2001-08-03 | 2004-04-22 | Ami Doduco Gmbh | Elektrischer Kontakt |
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2012
- 2012-09-26 DE DE102012109057A patent/DE102012109057B3/de not_active Expired - Fee Related
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2013
- 2013-07-31 WO PCT/DE2013/100280 patent/WO2014048414A1/de active Application Filing
- 2013-07-31 US US14/430,364 patent/US20150284866A1/en not_active Abandoned
- 2013-07-31 EP EP13756807.7A patent/EP2900849A1/de not_active Withdrawn
- 2013-07-31 CN CN201380049512.0A patent/CN104662207A/zh active Pending
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US20050196634A1 (en) * | 2004-03-05 | 2005-09-08 | Dowa Mining Co., Ltd. | Metal member and electric contact using same |
CN101978096A (zh) * | 2008-03-20 | 2011-02-16 | 阿托特希德国有限公司 | Ni-P层系统及其制备方法 |
Cited By (3)
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CN107921472A (zh) * | 2015-07-15 | 2018-04-17 | 思力柯集团 | 电沉积方法和经涂覆的组件 |
CN107447237A (zh) * | 2016-05-30 | 2017-12-08 | 滑动环及设备制造有限公司 | 具有降低的接触噪声的滑环 |
CN107447237B (zh) * | 2016-05-30 | 2021-04-20 | 史莱福灵有限公司 | 具有降低的接触噪声的滑环 |
Also Published As
Publication number | Publication date |
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EP2900849A1 (de) | 2015-08-05 |
US20150284866A1 (en) | 2015-10-08 |
DE102012109057B3 (de) | 2013-11-07 |
WO2014048414A1 (de) | 2014-04-03 |
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