CN104659154B - A kind of silicon chip of solar cell etching detector - Google Patents
A kind of silicon chip of solar cell etching detector Download PDFInfo
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- CN104659154B CN104659154B CN201510094231.8A CN201510094231A CN104659154B CN 104659154 B CN104659154 B CN 104659154B CN 201510094231 A CN201510094231 A CN 201510094231A CN 104659154 B CN104659154 B CN 104659154B
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- silicon chip
- slidable panels
- solar cell
- probe
- probe carriage
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of silicon chip of solar cell etching detector, slidable panels is placed on the boss of testboard, slidable panels side is provided with tooth bar, the profile of tooth engaged with tooth bar is had on the outer ring of adjusting rod, adjusting rod drives slidable panels sliding on boss against the side tooth bar of slidable panels by rotation, and adjusting rod is marked with the scale reading slidable panels displacement, probe carriage extends to front end face from the top of slidable panels, controlled probe carriage by the elevating mechanism being positioned at above probe carriage to rise and decline, the bottom of probe carriage has resilient probe equipped with two, it is connected with the positive and negative electrode of universal meter respectively；The present invention is used to carry out silicon chip of solar cell etching effect detection, both can detect whether to owe quarter, quarter can be detected whether again simultaneously, distance between two probes is fixed, resistance between the silicon chip edge of easily controllable measurement 2, and probe keeps vertical with silicon chip all the time, stable with the contact area of silicon chip, improve the accuracy measured.
Description
Technical field
The present invention relates to a kind of silicon chip of solar cell, be specifically related to a kind of silicon chip of solar cell etching detector.
Background technology
In the production process of solar cell, the purpose of etching procedure is to change by silicon chip non-diffusing face and side P-N junction
Method erodes, but it is underproof possible to there are two kinds of etchings: the first is to owe to carve, i.e. the P-N junction of side does not has
Thoroughly eroding, such resultant battery sector-meeting causes decrease in efficiency because of edge current leakage, and cell piece uses the longevity simultaneously
Life substantially reduces；It was quarter that the second etches underproof situation, had i.e. not only eroded the back side and side in technical process
P-N junction, and the P-N junction of front edge is also eroded, the width simultaneously etched more than 1mm (with cell piece front
Electrode design is relevant, and 1mm is the distance of current cell piece electrode spacing silicon chip edge mostly), such P-type silicon remains to just
Negative electrode is connected, and resultant battery can cause decrease in efficiency because of edge current leakage, and cell piece service life can be bright simultaneously
Aobvious reduction.And the method for existing detection etch effect is to use silicon chip side point-to-point transmission resistance after universal meter test etching, when
When resistance is more than 1000 ohm, it is believed that silicon chip is qualified, when resistance is less than 1000 ohm, it is believed that silicon chip is owed to carve, the most not
Qualified, but this detection method can only detect and owe quarter, then cannot detect crossing to carve, can only observe by the naked eye outside silicon chip
Seeing and judge roughly, whole test is all manual operation, and two test pencil spacings are difficult to control, and test pencil is difficult to silicon chip simultaneously
Ensure vertical, i.e. test pencil is unstable with the contact area of silicon chip, and these all can affect the accuracy of test.Although depositing now
In the detection means that some are new, but all can not effectively detect quarter.
Summary of the invention
Goal of the invention: it is an object of the invention to overcome the deficiencies in the prior art, it is provided that one can detect owes quarter, mistake
Carve and measure silicon chip of solar cell etching detector accurately.
Technical scheme: a kind of silicon chip of solar cell etching detector, including which is provided with the testboard of boss, adjusting rod,
Bottom has the slidable panels of depression, probe carriage and the elevating mechanism suitable with described boss, and described slidable panels is placed in
On the boss of described testboard, described slidable panels side is provided with tooth bar, the outer ring of described adjusting rod has and described tooth bar
The profile of tooth of engagement, described adjusting rod drives described slidable panels described convex against the side tooth bar of slidable panels by rotation
Sliding on platform, and described adjusting rod is marked with the scale reading described slidable panels displacement, described probe carriage is from described
The top of slidable panels extends to front end face, the described elevating mechanism being positioned at above described probe carriage control described probe carriage
Rising and decline, the bottom of described probe carriage has resilient probes equipped with two, respectively with the positive and negative electrode phase of universal meter
Even.
During detection, silicon chip lies against on testboard, and elevating mechanism drives probe carriage rise or drop to correct position, now
Manual rotation adjusting rod, is converted into the horizontal rectilinear motion of slidable panels by profile of tooth transmission by the circular motion of adjusting rod,
Drive probe carriage, realize probe with this and move to silicon chip, control the distance of probe distance silicon chip edge until probe arrives silicon
Sheet position, two probes contact with silicon chip, and the resistance of silicon chip side between two probes measured by the universal meter being attached thereto.
Make slidable panels slide and meet probe and silicon chip contacts side surfaces, when now resistance is less than 1000 ohm, it is judged that silicon chip
Owe to carve；Make slidable panels slide and meet probe and silicon chip front surface distance 1mm position, edge contact that (" 1mm " is
The outer grid line distance away from silicon chip edge, when grid line design changes, this numerical value need to adjust therewith), when resistance is high
In 1000 ohm time, it is judged that it's quarter pasts silicon chip, silicon chip neither owe carve, only carve time can determine that as certified products.
Additionally, one etched line of silicon chip surface meeting after Ke Shi, the reaction vestige that namely color is different, it is away from silicon chip
The distance at edge is considered as etching width, and when probe is pressed in etched line, the reading on manual rotation adjusting rod also can be measured
Etching width.
Further, described elevating mechanism is the coil of built-in iron core, and described probe carriage includes horizontal segment and vertical section, described
Horizontal segment is fabricated from iron；Turning on the power to coil electricity, coil generating electromagnetic sensing attracts the horizontal segment of probe carriage, attracts
Probe carriage rises, and stops to coil electricity, and probe carriage falls, thus drives whole probe carriage and probe knee-action thereof.
Further, described coil is placed on one piece of iron plate, is attracted the horizontal segment of described probe carriage by described iron plate；Line
The magnetic field that circle energising produces can be redistributed by iron plate, forms a uniform magnetic field with iron plate as plane, more
The horizontal segment having attracted probe carriage of firm laminating so that it is knee-action is more stable, is difficult to drop.
Further, described vertical section is made up of PVC, and PVC material is flexible and smooth, can prevent at test process
In scratch to silicon chip.
In like manner, described testboard is that PVC material is made, and is used for carrying tested silicon chip, and protection silicon chip surface quality is not subject to
Damage.
In order to prevent probe from damaging silicon chip during moving up and down, two described probes are copper spring, can freely stretch
Contracting, protects tested silicon chip, it is to avoid the impulsive force excessive in dropping process of probe smashes silicon chip；Probe is copper simultaneously
Conductor, connects with universal meter and directly can measure 2 resistance on silicon chip.
Further, the most horizontal the running through in two sides of the corresponding described slidable panels inner concave of two sides of described boss has
Semi-circular recesses, the cross section formed is to be inlaid with one group of ball in circular passage, and ball can play support test panel
The effect slided, makes sliding process more smooth and easy and reduces friction resistance force, reducing abrasion.
Beneficial effect: use the present invention to carry out silicon chip of solar cell etching effect detection, both can detect whether to owe quarter,
Quarter can be detected whether again simultaneously, etching width can be measured simultaneously；Distance between two probes is fixed, it is easy to control
Resistance between the silicon chip edge 2 measured, and probe is vertical with silicon chip holding all the time, it is stable with the contact area of silicon chip,
Improve the accuracy measured；If the detection to silicon chip entirety etching effect need to be completed, i.e. the resistance value at silicon chip difference edge,
Only need to change the putting position of silicon chip, other edges of silicon chip be contacted with probe, the most stable survey can be carried out
Amount, method of operating simple possible, Detection results is obvious, it is ensured that the every one side of every a piece of silicon chip is the most all without crossing quarter and situation at deficient quarter；
Detection quickly and easily, increases test job timeliness, and detection efficiency significantly improves, and avoids manual operations, silicon chip table simultaneously
Face scuffing, fragment or the possibility being contaminated are substantially reduced, and during detection, the quality of silicon chip is guaranteed.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is adjusting rod of the present invention and the partial enlarged drawing of slidable panels parts of tooth.
Detailed description of the invention
Below technical solution of the present invention is described in detail, but protection scope of the present invention is not limited to described enforcement
Example.
Embodiment: a kind of silicon chip of solar cell etching detector in the present embodiment, as it is shown in figure 1, include testboard
1, adjusting rod 2, slidable panels 3, probe carriage 4；5, the coil 9 of probe 6 and built-in iron core, the end of slidable panels 3
Portion is a concave surface, coordinates and is placed on the boss on testboard 1, before having ball to be embedded in boss both sides and slidable panels 3
In the groove of end face, play and support the effect that slidable panels 3 slides.Testboard 1 is made up of PVC, slidable panels 3
Side be provided with the tooth bar of level, there is, on one week, the profile of tooth engaged with tooth bar the outer ring of adjusting rod 2, and adjusting rod 2 is against cunning
The side tooth bar rotation of dynamic panel 3, drives slidable panels 3 to carry out backwater on testboard 1 by intermeshing profile of tooth and puts down
Mobile, the bottom of adjusting rod 2 indicates the scale that can read testboard 1 displacement in one week.
Probe carriage 4；5 front end faces being located at slidable panels 3, including the horizontal segment 4 at slidable panels 3 top with along front end
Face down extend vertical section 5, move to the vertical section of certain position 5 and contact with the boss of testboard 1, vertical section 5 by
PVC makes, and horizontal segment 4 is fabricated from iron, and the coil 9 of built-in iron core is placed on one piece of iron plate 8, is positioned at horizontal segment 4
Top, coil 9 power on/off can be produced electromagnetic induction, the horizontal segment 4 of attraction, thus drive whole probe carriage 4；5
And probe 6 knee-action；Two probes 6 are copper spring, retractable, and vertical is arranged on vertical section 5
Bottom, probe 6 is connected with the positive and negative electrode of universal meter respectively.
Crossing the detection method carved is: being energized to coil 9, coil 9 produces magnetic field suction probe carriage 4；5 rise, now
Silicon chip is placed on testboard 1, faces up, and make its tested limit be close to boss, stop being energized to coil 9, line
Circle 9 release probe carriage 4；5, probe carriage 4；5 overall drive probes 6 decline, simultaneously until dropping to the upper table of silicon chip
Face i.e. front, manual rotation adjusting rod 2, by profile of tooth transmission, the circular motion of adjusting rod 2 is converted into slidable panels 3
Horizontal rectilinear motion, slidable panels 3 moves to silicon chip, until probe 6 rests in silicon chip edge, remembers now to regulate
Initial scale on bar 2, continues rotation adjusting lever 2, until resistance value can be read on universal meter, and now adjusting rod 2
It is the distance taking probe 6 apart from silicon chip edge, the i.e. distance of cell piece electrode spacing silicon chip edge that scale deducts initial scale,
Can check that the width of etching, whether more than 1mm, universal meter demonstrates the edge resistance of silicon chip between two probes 6；When
When resistance is higher than 1000 ohm, it's quarter pasts silicon chip, and silicon chip is non-certified products, and when resistance is less than 1000 ohm, silicon chip is not
Spend quarter, for certified products.
The detection method owing to carve is: stops before test being energized to coil 9, makes probe carriage 4；5 drop in extreme lower position,
Now probe carriage 4；5 fall on testboard 1, are placed on by silicon chip on testboard 1 and ensure the tested edge of silicon chip and two
Probe 6 contacts, and universal meter demonstrates the silicon chip resistance between two probes 6；When resistance is higher than 1000 ohm, silicon
Sheet is not owed to carve, and silicon chip is certified products, and when resistance is less than 1000 ohm, silicon chip is owed to carve, for non-certified products.
Although as it has been described above, represented and described the present invention with reference to specific preferred embodiment, but it shall not be construed as
Restriction to the present invention self.Under the spirit and scope of the present invention premise defined without departing from claims, can be right
Various changes can be made in the form and details for it.
Claims (7)
- null1. a silicon chip of solar cell etching detector，It is characterized in that: include which is provided with the testboard of boss、Adjusting rod、Bottom has the slidable panels of the depression suitable with described boss、Probe carriage and elevating mechanism，Described slidable panels is placed on the boss of described testboard，Described slidable panels side is provided with tooth bar，The profile of tooth engaged with described tooth bar is had on the outer ring of described adjusting rod，Described adjusting rod drives the sliding on described boss of described slidable panels against the side tooth bar of slidable panels by rotation，And described adjusting rod is marked with the scale reading described slidable panels displacement，Described probe carriage extends to front end face from the top of described slidable panels，Controlled described probe carriage by the described elevating mechanism being positioned at above described probe carriage to rise and decline，The bottom of described probe carriage has resilient probe equipped with two，It is connected with the positive and negative electrode of universal meter respectively.
- Silicon chip of solar cell the most according to claim 1 etching detector, it is characterised in that: described elevating mechanism is the coil of built-in iron core, and described probe carriage includes horizontal segment and vertical section, and described horizontal segment is fabricated from iron.
- Silicon chip of solar cell the most according to claim 2 etching detector, it is characterised in that: described coil is placed on one piece of iron plate, is attracted the horizontal segment of described probe carriage by described iron plate.
- Silicon chip of solar cell the most according to claim 2 etching detector, it is characterised in that: described vertical section is made up of PVC.
- Silicon chip of solar cell the most according to claim 1 etching detector, it is characterised in that: described testboard is that PVC material is made.
- Silicon chip of solar cell the most according to claim 1 etching detector, it is characterised in that: two described probes are copper spring.
- Silicon chip of solar cell the most according to claim 1 etching detector, it is characterized in that: the most horizontal the running through in two sides of the corresponding described slidable panels inner concaves of two sides of described boss has semi-circular recesses, the cross section formed is to be inlaid with one group of ball in circular passage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510094231.8A CN104659154B (en) | 2015-03-03 | 2015-03-03 | A kind of silicon chip of solar cell etching detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510094231.8A CN104659154B (en) | 2015-03-03 | 2015-03-03 | A kind of silicon chip of solar cell etching detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104659154A CN104659154A (en) | 2015-05-27 |
| CN104659154B true CN104659154B (en) | 2016-08-24 |
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| CN201510094231.8A Active CN104659154B (en) | 2015-03-03 | 2015-03-03 | A kind of silicon chip of solar cell etching detector |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106199988B (en) * | 2016-08-31 | 2020-06-16 | 京东方科技集团股份有限公司 | Adjusting structure, 3D display device and control method thereof |
| CN106969697B (en) * | 2017-04-28 | 2023-10-27 | 厦门大钧精密工业有限公司 | Magnetic induction distance and high-low resistance detector for brake oil storage tank sensing assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2012042283A (en) * | 2010-08-17 | 2012-03-01 | Sony Corp | Inspection method and inspection device |
| CN102157416B (en) * | 2011-04-01 | 2012-11-14 | 百力达太阳能股份有限公司 | Automatic detection method of dry etching silicon slice |
| CN203376402U (en) * | 2013-07-15 | 2014-01-01 | 中节能太阳能科技（镇江）有限公司 | Edge resistance test bench |
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