CN203376402U - Edge resistance test bench - Google Patents

Edge resistance test bench Download PDF

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Publication number
CN203376402U
CN203376402U CN201320418892.8U CN201320418892U CN203376402U CN 203376402 U CN203376402 U CN 203376402U CN 201320418892 U CN201320418892 U CN 201320418892U CN 203376402 U CN203376402 U CN 203376402U
Authority
CN
China
Prior art keywords
fulcrums
test panel
silicon
resistance test
test bench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201320418892.8U
Other languages
Chinese (zh)
Inventor
王守志
勾宪芳
姜利凯
王鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CECEP Solar Energy Technology Zhenjiang Co Ltd
Original Assignee
CECEP Solar Energy Technology Zhenjiang Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CECEP Solar Energy Technology Zhenjiang Co Ltd filed Critical CECEP Solar Energy Technology Zhenjiang Co Ltd
Priority to CN201320418892.8U priority Critical patent/CN203376402U/en
Application granted granted Critical
Publication of CN203376402U publication Critical patent/CN203376402U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model discloses an edge resistance test bench which comprises a test panel and fulcrums. The test bench is provided with two convex fulcrums which are provided with concave holes for the insertion of multimeter pens. The two fulcrums are mutually insulated conductors. The test panel is provided with slide rails. The two fulcrums slide horizontally between the slide rails. The edge resistance test bench is used to carry out edge resistance measurement on a silicon, the operation is simple, the working efficiency can be greatly improved, the contact areas between the silicon and the fulcrums are fixed, the testing accuracy is high, the silicon pollution can be effectively prevented at the same time of testing, and the silicon fragmentation rate is reduced.

Description

A kind of edge resistance test board
Technical field
The utility model relates to the resistance detection field, is specifically related to a kind of edge resistance test board.
Background technology
In the manufacture of solar cells process, the purpose of etching procedure is that the non-diffusingsurface of silicon chip and side P-N knot are chemically eroded, and the method for detection etch effect is silicon chip side point-to-point transmission resistance after use multimeter test etching, when resistance surpasses 1000 ohm, think that silicon chip is qualified; When resistance during lower than 1000 ohm, think that silicon chip owes to carve, defective.Whole test is manually-operated, and two test pencil spacings are restive, and simultaneously to be difficult to assurance vertical for test pencil and silicon chip, and the contact area of test pencil and silicon chip is unstable, and these all can affect the accuracy of test.
The utility model content
The utility model purpose: the purpose of this utility model is for the deficiencies in the prior art, and a kind of edge resistance test board of simple to operate and stable testing is provided.
Technical scheme: a kind of edge described in the utility model resistance test board, comprise test panel and fulcrum, two fulcrums of projection are set on described test panel, and described two fulcrums are equipped with the pothole that pen meter of universal meter is inserted, described two conductors that fulcrum is mutually insulated; By silicon chip, be placed on test panel and the edge of silicon chip rests on two fulcrums, pothole in fulcrum inserts for pen meter of universal meter, therefore, pen meter of universal meter keeps vertical with silicon chip all the time, fulcrum is conductor, pen meter of universal meter can directly be measured silicon chip edge side point-to-point transmission resistance after inserting, simple operation, and can guarantee the accuracy of measuring.
Further, described test panel is provided with slide rail, and described two fulcrum horizontal slips in described slide rail, in order to adjust the distance between two fulcrums, to be adapted to the test needs of all size silicon chip.
In order to prevent that silicon chip is close on test panel, have the groove for ventilation on described test panel, be convenient to silicon chip and take off from test panel.
Further, the bottom of described test panel is arranged on base by support, and support and base are for supporting test panel.
Beneficial effect: use the utility model to carry out the edge resistance measurement to silicon chip, simple to operate, can greatly promote work efficiency, contact area between silicon chip and fulcrum is fixed, test accuracy is high, in test, can effectively prevent wafer contamination, reduces the silicon chip fragment rate.
The accompanying drawing explanation
The structural representation that Fig. 1 is utility model.
Embodiment
Below technical solutions of the utility model are elaborated, but protection domain of the present utility model is not limited to described embodiment.
embodiment:a kind of edge of the utility model resistance test board, as shown in Figure 1, comprise test panel 1, fulcrum 2, support 3 and base 4, the bottom of test panel 1 is arranged on base 4 by support 3, for supporting test panel 1, be provided with slide rail near the place, base on test panel 1, two fulcrums 2 of projection can horizontal slip in slide rail, adjust the distance that is suitable for measuring edge resistance between two fulcrums 2, two fulcrums 2 are equipped with the pothole that pen meter of universal meter 5 is inserted, two conductors that fulcrum 2 is metal material, mutual insulating; By silicon chip, be placed on test panel 1 and the edge of silicon chip rests on two fulcrums 2, pothole in fulcrum 2 inserts for pen meter of universal meter 5, can directly measure silicon chip edge side point-to-point transmission resistance, pen meter of universal meter 5 keeps vertical with silicon chip all the time, contact area is stable, test accuracy is strong, easy and simple to handle; Have the groove 6 for ventilation on test panel 1, tested rear defence and stopped silicon chip and be close on test panel 1 and be difficult to take off.
As mentioned above, although meaned and explained the utility model with reference to specific preferred embodiment, it shall not be construed as the restriction to the utility model self.Under the spirit and scope prerequisite of the present utility model that does not break away from the claims definition, can make in the form and details various variations to it.

Claims (4)

1. an edge resistance test board, it is characterized in that: comprise test panel (1) and fulcrum (2), two fulcrums (2) of projection are set on described test panel (1), described two fulcrums (2) are equipped with the pothole that pen meter of universal meter (5) is inserted, the conductor that described two fulcrums (2) are mutually insulated.
2. edge according to claim 1 resistance test board, it is characterized in that: described test panel (1) is provided with slide rail, described two fulcrums (2) horizontal slip in described slide rail.
3. edge according to claim 1 resistance test board, is characterized in that: have the groove (6) for ventilation on described test panel (1).
4. edge according to claim 1 resistance test board, it is characterized in that: the bottom of described test panel (1) is arranged on base (4) by support (3).
CN201320418892.8U 2013-07-15 2013-07-15 Edge resistance test bench Expired - Lifetime CN203376402U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320418892.8U CN203376402U (en) 2013-07-15 2013-07-15 Edge resistance test bench

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320418892.8U CN203376402U (en) 2013-07-15 2013-07-15 Edge resistance test bench

Publications (1)

Publication Number Publication Date
CN203376402U true CN203376402U (en) 2014-01-01

Family

ID=49838925

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320418892.8U Expired - Lifetime CN203376402U (en) 2013-07-15 2013-07-15 Edge resistance test bench

Country Status (1)

Country Link
CN (1) CN203376402U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104659154A (en) * 2015-03-03 2015-05-27 中节能太阳能科技(镇江)有限公司 Etching detector for solar cell silicon wafer
CN108957275A (en) * 2018-06-29 2018-12-07 韩华新能源(启东)有限公司 Conductive wafer type identification method and discriminating device and tester based on the method for discrimination
CN109655667A (en) * 2018-12-14 2019-04-19 盐城阿特斯协鑫阳光电力科技有限公司 The test method and device of silicon chip edge resistance after etching

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104659154A (en) * 2015-03-03 2015-05-27 中节能太阳能科技(镇江)有限公司 Etching detector for solar cell silicon wafer
CN108957275A (en) * 2018-06-29 2018-12-07 韩华新能源(启东)有限公司 Conductive wafer type identification method and discriminating device and tester based on the method for discrimination
CN109655667A (en) * 2018-12-14 2019-04-19 盐城阿特斯协鑫阳光电力科技有限公司 The test method and device of silicon chip edge resistance after etching

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C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20140101