CN104658930A - 封装焊线的制备方法及其成品 - Google Patents
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Abstract
本发明提供一种封装焊线的制备方法及其成品。该制备方法包括:先使用具有适当减面率的眼模伸线加工母材,以获得芯材;再经由电镀工艺于芯材上形成抗氧化层;并于适当的退火温度下热处理抗氧化层,以获得适用于半导体封装工艺的封装焊线。依据本发明,由于该制备方法先进行伸线加工再进行电镀工艺,因伸线加工而形成于芯材表面的裂痕能经由电镀工艺加以填补,使抗氧化层得以完整包覆于芯材表面并且提升抗氧化层的表面平整性,藉此解决现有技术的封装焊线常因形成于抗氧化层的裂痕而降低半导体装置的品质的问题。
Description
技术领域
本发明涉及半导体领域,尤指一种封装焊线的制备方法及其成品。
背景技术
为顺应半导体领域对精密化、高品质及低成本等产品需求,现今多半选用表面镀有抗氧化层的铜线取代金线连接电子、电路元件,以封装形成半导体装置。
中国台湾专利公告案第I287282号揭示一种抗氧化的铜线,此抗氧化的铜线是由铜线及铜线外表面包覆的抗氧化层所组成,令铜线具有优于金线的电性可靠度。
中国台湾专利公告第578286号亦揭示一种连结线,其包含以铜为主要成分的芯材及形成于芯材上的被覆层,且该被覆层的材料为熔点高于铜的耐氧化性金属,利用该被覆层防止芯材发生表面氧化现象。依据该篇专利所揭示的制备方法,其先于芯材上电镀被覆层,再对芯材及形成于其上的被覆层进行伸线加工,以使连结线获得预定的线径与被覆层厚度。然而,由于伸线加工是于被覆层形成后再进行,故形成于芯材上的被覆层表面会因伸线加工而形成缺陷,例如:裂痕、孔洞或剥落,甚而劣化包含此种连结线的半导体装置的品质,并使其往精密化的发展受到限制。
因此,半导体封装技术领域人员正积极改良现有技术的封装焊线的表面结构,以期能克服上述问题。例如,中国台湾专利公开案第200937546号揭示一种半导体装置用合接线,其包含由导电性金属构成的芯材以及形成于该芯材上且其成分有别于前述导电金属的表皮层。该篇专利通过控制表皮层的金属成分具有面心立方晶体结构及具有50%以上的长边方向结晶方位<111>,以期能达到减少表皮层因伸线加工而产生缺陷的目的。然而,依此方法制备合接线将提高工艺复杂度与制作成本;且由于该篇专利的表皮层亦是先形成于芯材上才进行伸线加工,故即便控制表皮层的晶体结构与结晶方位比例,仍然无法完全避免表皮层的表面因伸线加工而形成缺陷或裂痕的问题。
发明内容
有鉴于现有技术所面临的技术缺陷,本发明的目的在于改良封装焊线的制备方法,藉此克服现有技术封装焊线的抗氧化层表面因伸线加工而形成孔洞或裂痕等缺陷。
为达成前述目的,本发明提供一种封装焊线的制备方法,其包括:
提供母材;
使用眼模减面率介于7%至9%之间的多重钻石眼模伸线母材,以获得芯材;
将芯材置于电镀液中,并于芯材上电镀形成抗氧化层,以获得包覆有抗氧化层的芯材;以及
以400℃至800℃的温度热处理包覆有抗氧化层的芯材,制得封装焊线。
由于本发明封装焊线的制备方法是先经过伸线加工再进行电镀工艺,同时搭配适当的退火温度进行热处理,故该电镀工艺能有利于填补因伸线加工而形成于芯材表面的缺陷,例如:裂痕、孔洞或剥落,确保所制得的封装焊线中抗氧化层能完整包覆于芯材表面,同时提升抗氧化层的表面平整性。
较佳的,前述以400℃至800℃的温度热处理包覆有抗氧化层的芯材制得封装焊线的步骤包括:于通有10升/分钟(L/min)至15升/分钟的氮气环境中,以400℃至800℃的温度热处理包覆有抗氧化层的芯材,制得封装焊线。据此,该制备方法能确保热处理温度的均匀性,进而提升所制得的封装焊线的品质。
较佳的,前述使用眼模减面率介于7%至9%之间的多重钻石眼模伸线母材以获得芯材的步骤包括:以100至200米/分钟(m/min)的伸线速率,使用眼模减面率介于7%至9%之间的多重钻石眼模伸线母材,以获得芯材。
更佳的,以100米/分钟至150米/分钟的伸线速率,使用眼模减面率介于7%至9%之间的多重钻石眼模伸线母材以获得芯材,其更具体步骤包括:
以100至150米/分钟的伸线速率,使用眼模减面率介于7%至9%之间的多重钻石眼模伸线母材,以获得经伸线加工的母材;以及
以100至150米/分钟的伸线速率,使用出口眼模孔径值介于15微米至50微米之间的多重钻石眼模伸线经前述伸线加工的母材,以获得芯材。据此,芯材具有介于15微米至50微米之间的线径。
较佳的,多重钻石眼模的出口眼模孔径值介于15至50微米之间,令所制得的芯材具有介于15至50微米之间的线径。
较佳的,将芯材置于电镀液中并于芯材上电镀形成抗氧化层以获得包覆有抗氧化层的芯材的步骤包括:
将芯材置于电镀液中;以及
以0.01安培(A)以上的电流、30米/分钟至50米/分钟的生产线速,于芯材上电解电镀形成抗氧化层,以获得包覆有抗氧化层的芯材。
更佳的,该制备方法包括以0.01A至0.1A的电流于芯材上电镀形成抗氧化层,以获得包覆有抗氧化层的芯材。
据此,利用电解电镀法于芯材上形成抗氧化层能有利于同时达成降低封装焊线的制作成本、提升镀钯材料利用率以及降低能源损耗等功效。
较佳的,电镀液为含有金属离子的水溶液,金属离子为钯离子,且电镀液的钯离子的浓度介于2克/升(g/L)至4克/升(g/L),以电镀形成表面细致且无裂痕产生的抗氧化层。据此,经由本发明封装焊线的制备方法所制得的成品为镀钯焊线。
较佳的,母材的线径介于50至200微米之间。
为达成前述目的,本发明另提供一种封装焊线,其由如前述的制备方法所制得,且封装焊线包含芯材及包覆于芯材表面的抗氧化层,其中封装焊线的拉伸率介于4%至20%之间,拉断力介于3gf至48gf之间。
据此,本发明的封装焊线更能适用于半导体封装工艺,进而提升利用本发明的封装焊线进行半导体封装工艺的生产合格率及包含其的半导体装置的品质,使其更加符合精密化产品需求。
较佳的,封装焊线的拉线强度能符合大于4gf以上的规范,封装焊线的推球强度能符合大于7gf以上的规范,且封装焊线的第二焊点的拉线强度亦符合大于2gf以上的规范。故,封装焊线能具有较优异的封装焊线的品质。
较佳的,封装焊线的降伏强度高于100MPa以上。
较佳的,封装焊线的工艺能力指数(CPK)皆符合大于2以上的规范。据此,封装焊线应用于半导体封装工艺时能具有较佳的稳定性。
较佳的,封装焊线所形成的结球(free air ball,FAB)的整体硬度介于45至52HV;封装焊线的抗氧化层完整包覆于芯材表面,故能降低于半导体封装工艺中发生封装焊线断裂的情形,同时提升封装焊线与芯片电极的密合性及接合强度。
较佳的,抗氧化层的厚度介于50至130纳米之间。
较佳的,以整体封装焊线为基准,抗氧化层的材料的含量介于1wt%至5wt%之间;更佳的,以整体封装焊线为基准,抗氧化层的材料的含量介于1wt%至3wt%之间。
较佳的,母材及芯材含有等于或大于99.99重量百分比以上(纯度高达等于或大于4N以上)的无氧铜或单晶铜;更佳的,芯材含有等于或大于99.9999重量百分比以上(纯度高达等于或大于6N以上)的单晶铜。此外,芯材进一步包含银、铁、锰、砷、磷、硫、钙、镁或其组合,这些成分的含量大于0ppm且小于或等于5ppm。
较佳的,抗氧化层材料包含钯或铂;更佳的,抗氧化层材料为钯。
综上所述,本发明通过改良封装焊线的制备方法,不仅能避免伸线加工劣化抗氧化层表面,更能有助于经由电镀工艺填补形成于芯材表面的裂痕或孔洞,使抗氧化层完整包覆于芯材表面并且提升抗氧化层表面平整性,令所制得的封装焊线具有适当的拉伸率及拉断力,进而提升其应用于半导体封装工艺的生产优良率。
附图说明
图1为由实施例2的镀钯焊线所形成的结球(free air ball,FAB)的金相显微镜影像图。
图2为由贺利氏(Heraeus)出售的镀钯焊线所形成的结球的金相显微镜影像图。
具体实施方式
以下,将通过下列具体实施例说明本发明的实施方式,本领域技术人员可经由本说明书的内容轻易地了解本发明所能达成的优点与功效,并且于不背离本发明的精神下进行各种修饰与变更,以实施或应用本发明的内容。
实施例1至8封装焊线的制备方法及其成品
实施例1至8大致上经由如下列所述封装焊线的制备方法,制得各种封装焊线。
首先,准备线径介于160微米的母材,该母材的主成分为纯度4N以上(99.99重量百分比(wt%))的无氧铜,另含有铁、锰、砷等杂质,这些杂质的含量为0.01重量百分比。
接着,以100至150米/分钟(m/min)的伸线速率,使用眼模减面率介于7%至9%的多重钻石眼模,重复进行多道伸线工艺,以获得经伸线加工的母材,再以出口眼模孔径值介于15微米至50微米之间的多重钻石眼模伸线前述经伸线加工的母材,令前述高纯度母材经伸线加工形成线径介于15微米至50微米之间的芯材。
之后,以超声波及电解脱脂方式清洗该芯材;再将其置于浓度为2至4克/升(g/L)的钯电镀液中,并以0.01安培以上的电流、30至50米/分钟的生产线速,于芯材上电镀形成厚度介于50纳米至130纳米的抗氧化层,以获得表面形成有抗氧化层的芯材。于实施例1至8中,抗氧化层为钯层。
然后,以超声波及电解脱脂方式清洗该表面形成有抗氧化层的芯材,并以纯度4N(99.99浓度百分比)、气体流量为10升/分钟(L/min)至15升/分钟(L/min)的氮气,将残留于抗氧化层表面的钯电镀液吹干。
最后,于持续通有10L/min至15L/min的氮气环境中,以400℃至800℃的退火温度,利用红外线热传导方式热处理该具有抗氧化层的芯材,即可获得封装焊线。于此,各实施例所制得的封装焊线为镀钯焊线。
依据上述制备方法,各实施例所设定的多重钻石眼模的出口眼模孔径值(最后一道伸线工艺)、伸线速率、生产线速、电流及退火温度等工艺参数如下表1所示;且各实施例经由此工艺参数所制得的镀钯焊线的芯材线径规格、钯层厚度、拉伸率及拉断力如下表2所示。其中,各实施例的镀钯焊线以拉伸试验机(厂牌:INSTRON、型号:5543)进行拉伸测试,另设定拉伸试验机的标准拉线长度25.4cm、依据各个实施例设定线径范围15至50μm,得到各实施例的镀钯焊线的拉伸率与拉断力分析结果。
表1:制备实施例1至8制备镀钯焊线所设定的工艺参数
表2:实施例1至8所制得的镀钯焊线的芯材线径、钯层厚度、拉伸率及拉断力
芯材线径 | 钯层厚度 | 拉伸率 | 拉断力 | |
实施例1 | 15微米 | 70±20纳米 | 6±2% | 5±2gf |
实施例2 | 18微米 | 80±20纳米 | 9±2% | 6±2gf |
实施例3 | 20微米 | 80±20纳米 | 11±2% | 7±2gf |
实施例4 | 23微米 | 85±20纳米 | 14±2% | 10±2gf |
实施例5 | 25微米 | 85±20纳米 | 15±2% | 11±2gf |
实施例6 | 30微米 | 90±20纳米 | 16±2% | 16±2gf |
实施例7 | 38微米 | 90±20纳米 | 17±2% | 28±2gf |
实施例8 | 50微米 | 100±20纳米 | 18±2% | 46±2gf |
如上表2所示,经由前述镀钯焊线的制备方法所制得的成品,其拉伸率皆可介于4至20%之间,其拉断力皆介于3至48gf之间,显示镀钯焊线的制备方法能顺利制得适合用于半导体封装的焊接线材。
本实验另以金相显微镜观察各实施例的镀钯焊线的表面,证实经由上述实施例所述的镀钯焊线的制备方法,能完全避免所制得的镀钯焊线的抗氧化层表面因伸线加工而产生缺陷或裂痕。
试验例1镀钯焊线的品质
考虑半导体装置对精密化产品需求,本试验例分析线径皆为18微米的实施例2的镀钯焊线与贺利氏(Heraeus)出售的镀钯焊线(商品型号为Pd Soft),并使用推拉力测试仪(厂牌:Dage、型号:Series 4000)测量前述两种镀钯焊线的拉线(wire pull)、推球(ball shear)与第二焊点的拉线强度,以评估各镀钯焊线的品质。
于本试验例中,待测量的镀钯焊线使用自动焊线机(厂牌:K&S、型号:Maxum-Plus),并以电弧放电在镀钯焊线前端形成结球(free air ball,FAB);且为提升测量结果的可信度,实施例2与贺利氏出售的镀钯焊线各自形成30颗球径为33至35微米的焊球大小,以测得各镀钯焊线的拉线强度、推球强度与第二焊点的拉线强度的最大值、最小值与平均值,其测量结果如下表3所示。此外,各镀钯焊线的工艺能力指数亦如下表3所示。
表3:实施例2与贺利氏出售的镀钯焊线的拉线强度、推球强度与第二焊点的拉线强度的最大值、最小值与平均值及工艺能力指数
如上表3所示,实施例2的镀钯焊线与贺利氏出售的镀钯焊线的拉线强度皆符合大于4gf以上的规范,且这些镀钯焊线的第二焊点的拉线强度亦皆符合大于2gf以上的规范,显示两种镀钯焊线于进行拉线工艺时皆不易发生断裂的情形,且第二焊点能与芯片电极形成良好的接合强度;另外,实施例2的镀钯焊线与贺利氏出售的镀钯焊线的推球强度皆符合大于7gf以上的规范,显示两种镀钯焊线于进行放电烧球所形成的FAB能完整地接合于焊接垫上,避免球型焊点发生偏移、畸形或形成有高尔夫球形(即,球型焊点中心点略偏于镀钯焊线外侧)的外观。
再者,进一步比对实施例2的镀钯焊线与贺利氏出售的镀钯焊线的拉线强度与第二焊点的拉线强度可知,经由上述实施例中镀钯焊线的制备方法所制得的成品能具有较优异的推球强度CPK及第二焊点的拉线强度CPK,显示实施例2的镀钯焊线更能有利于避免镀钯焊线于半导体封装工艺中发生断裂的情形。
尤其,比对实施例2的镀钯焊线与贺利氏出售的镀钯焊线的工艺能力指数可知,实施例2的镀钯焊线不论就拉线强度、推球强度及第二焊点的拉线强度而言,其偏差皆能控制于一定的范围内,故能确保其CPK皆符合大于2的规范;反观贺利氏出售的镀钯焊线,由于其推球强度的偏差较大,致使其CPK值仅有1.77,已违反CPK需大于2的规范。据此,经由上述比对结果验证,通过改变镀钯焊线的制备方法,实施例2的镀钯焊线能进一步提升镀钯焊线应用于半导体封装工艺的品质与稳定性。
试验例2硬度
本试验例亦使用自动焊线机(厂牌:K&S、型号:Maxum-Plus),并经由电弧放电法,分别于线径皆为18微米的实施例2的镀钯焊线与贺利氏(Heraeus)出售的镀钯焊线(商品型号为Pd Soft)的前端形成球径为33至35微米的焊球大小;再使用硬度仪(厂牌:Future-Tech、型号:FM-800)测量各镀钯焊线的FAB的维氏硬度(Vickershardness(HV))。
请参阅图1及图2所示,本试验例于各FAB(free air ball)的外围取4点(于图上标注编号1、3、4及5处)、各FAB的中心取1点(于图上标注编号2处),测量其FAB的外围与中心的硬度大小,其测量结果如下表4所示。
表4:由实施例2与贺利氏出售的镀钯焊线所形成的FAB的硬度测量结果
如上表4所示,由于贺利氏出售的镀钯焊线是由先电镀抗氧化层再进行伸线加工所制得,故抗氧化层表面结构与品质易受伸线加工的影响,抗氧化层无法完整包覆芯材表面,致使由贺利氏出售的镀钯焊线所形成的FAB的整体硬度皆高于52HV,故贺利氏出售的镀钯焊线于封装工艺中较易发生断裂且密合性不佳的问题。
相反地,通过改良封装焊线的制备方法,能确保所制得的封装焊线中抗氧化层的表面结构与品质,故由实施例2的镀钯焊线所形成的FAB的整体硬度皆能介于45至52HV,故实施例2所形成的FAB不论外围或中心硬度皆低于贺利氏的镀钯焊线所形成的FAB的硬度。
经由上述实验结果显示,依据本发明的制备方法制作封装焊线,不仅能避免封装焊线于封装工艺中发生断裂的情形,更能达到提升封装焊线所形成的FAB与芯片电极的密合性及接合强度等优点。
上述实施例仅为了方便说明而举例而已,本发明所主张的权利范围自应权利要求所述为准,而非仅限于上述实施例。
Claims (15)
1.一种封装焊线的制备方法,其包括:
提供母材;
使用眼模减面率为7%至9%的多重钻石眼模伸线母材,以获得芯材;
将芯材置于电镀液中,并于芯材上电镀形成抗氧化层,以获得包覆有抗氧化层的芯材;以及
以400℃至800℃的温度热处理包覆有抗氧化层的芯材,制得封装焊线。
2.根据权利要求1所述的制备方法,其中以400℃至800℃的温度热处理包覆有抗氧化层的芯材制得封装焊线的步骤包括:
于通有10升/分钟至15升/分钟的氮气环境中,以400℃至800℃的温度热处理包覆有抗氧化层的芯材,制得封装焊线。
3.根据权利要求1所述的制备方法,其中使用眼模减面率为7%至9%的多重钻石眼模伸线母材以获得芯材的步骤包括:以100至150米/分钟的伸线速率,使用眼模减面率为7%至9%的多重钻石眼模伸线母材,以获得芯材。
4.根据权利要求3所述的制备方法,其中以100至150米/分钟的伸线速率使用眼模减面率为7%至9%的多重钻石眼模伸线母材以获得芯材的步骤包括:
以100至150米/分钟的伸线速率,使用减面率为7%至9%的多重钻石眼模伸线母材,以获得经伸线加工的母材;以及
以100至150米/分钟的伸线速率,使用出口眼模孔径值为15微米至50微米的多重钻石眼模伸线经伸线加工的母材,以获得芯材。
5.根据权利要求1所述的制备方法,其中将芯材置于电镀液中并于芯材上电镀形成抗氧化层以获得包覆有抗氧化层的芯材的步骤包括:
将芯材置于电镀液中;以及
以0.01安培以上的电流、30至50米/分钟的生产线速,于芯材上电镀形成抗氧化层,以获得包覆有抗氧化层的芯材。
6.根据权利要求5所述的制备方法,其中电镀液为含有金属离子的水溶液,金属离子为钯离子。
7.根据权利要求6所述的制备方法,其中电镀液的钯离子的浓度为2克/升至4克/升。
8.根据权利要求1至7中任一项所述的制备方法,其中母材的线径为50至200微米。
9.根据权利要求1至7中任一项所述的制备方法,其中芯材含有99.99重量百分比以上的无氧铜或单晶铜。
10.根据权利要求9所述的制备方法,其中芯材进一步包含银、铁、锰、砷、磷、硫、钙、镁或其组合。
11.一种封装焊线,其由权利要求1至10中任一项所述的制备方法所制得,且封装焊线包含芯材及包覆于芯材表面的抗氧化层,其中封装焊线的拉伸率为4%至20%,拉断力为3gf至48gf。
12.根据权利要求11所述的封装焊线,其中抗氧化层的厚度为50至130纳米。
13.根据权利要求11所述的封装焊线,其中以整体封装焊线为基准,抗氧化层的材料的含量为1重量百分比至5重量百分比。
14.根据权利要求11所述的封装焊线,其中封装焊线的芯材的线径为15至50微米。
15.根据权利要求11所述的封装焊线,其中抗氧化层的材料包含钯。
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CN2153421Y (zh) * | 1992-11-27 | 1994-01-19 | 亿凯机械有限公司 | 伸线机结构 |
TW552173B (en) * | 2001-09-19 | 2003-09-11 | Tien Tai Electrode Co Ltd | Method of manufacturing a solid solder wire free of copper plating |
CN102280388A (zh) * | 2011-05-18 | 2011-12-14 | 王一平 | 基于单晶铜键合丝的制备方法 |
CN102422404A (zh) * | 2009-07-30 | 2012-04-18 | 新日铁高新材料株式会社 | 半导体用接合线 |
CN103325439A (zh) * | 2013-05-14 | 2013-09-25 | 安徽旺达铜业发展有限公司 | 一种镀锡铜包黄铜线及其生产方法和镀锡设备 |
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Patent Citations (5)
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CN2153421Y (zh) * | 1992-11-27 | 1994-01-19 | 亿凯机械有限公司 | 伸线机结构 |
TW552173B (en) * | 2001-09-19 | 2003-09-11 | Tien Tai Electrode Co Ltd | Method of manufacturing a solid solder wire free of copper plating |
CN102422404A (zh) * | 2009-07-30 | 2012-04-18 | 新日铁高新材料株式会社 | 半导体用接合线 |
CN102280388A (zh) * | 2011-05-18 | 2011-12-14 | 王一平 | 基于单晶铜键合丝的制备方法 |
CN103325439A (zh) * | 2013-05-14 | 2013-09-25 | 安徽旺达铜业发展有限公司 | 一种镀锡铜包黄铜线及其生产方法和镀锡设备 |
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