CN104638070B - A kind of preparation method of photoelectric device - Google Patents
A kind of preparation method of photoelectric device Download PDFInfo
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- CN104638070B CN104638070B CN201510099385.6A CN201510099385A CN104638070B CN 104638070 B CN104638070 B CN 104638070B CN 201510099385 A CN201510099385 A CN 201510099385A CN 104638070 B CN104638070 B CN 104638070B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 39
- 238000000407 epitaxy Methods 0.000 claims description 18
- 239000002096 quantum dot Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 93
- 239000011241 protective layer Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910019080 Mg-H Inorganic materials 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Led Devices (AREA)
Abstract
The invention discloses a kind of preparation method of photoelectric device, after substrate is loaded into reative cell and before grown epitaxial layer, UVLED processing is carried out to substrate, effective reduction substrate surface caused by during being put into slide glass dish and being loaded into reative cell is organic or/and inorganic matter pollutes, ensure the surface cleaning before grown epitaxial layer, it is to avoid the generation of surface defect after outer layer growth；Grown N-type, active and p-type epitaxial layer after UVLED processing, carry out UVLED processing simultaneously in each epitaxial layer growth process, effectively reduce each doping or the non-point defect mixed in many first epitaxial layers of AlInGaN, AlGaInP, AlGaInAs, lift crystal mass, the Mg H passivation keys of P-type layer can be interrupted simultaneously, therefore N-type and P-type layer free carrier concentration and mobility can effectively be lifted, lift active area efficiency, and then improve the performance of photoelectric device, it is adaptable to semiconductor photoelectric device.
Description
Technical field
The invention belongs to semiconductor light electro-technical field, and in particular to a kind of preparation method of photoelectric device.
Background technology
With semiconductor photoelectric device（Such as light emitting diode and solar cell）That applies is more and more extensive, further
Improve its photoelectric properties turns into the research emphasis of industry.Conventional epitaxial layer growth, because defect is more, influences crystal growth matter
Amount, influences carrier mobility, and then influences device performance, also, substrate is being put into slide glass dish and is being loaded into the process of reative cell
In may cause surface contamination, surface defect can be caused after outer layer growth, therefore, it is necessary to invent a kind of new extension
Growing method improves problem above.
The content of the invention
In view of the above-mentioned problems, the invention provides a kind of preparation method of photoelectric device, not only ensureing substrate in epitaxial layer
Cleaned before growth, it is to avoid cause surface defect, and epitaxial layer defects can be reduced, lift crystal mass, lifting carrier is moved
Shifting rate, so as to improve the performance of device.
A kind of preparation method of photoelectric device, comprises the following steps：（1）One substrate is provided；（2）It is loaded into the substrate anti-
Answer after room and before grown epitaxial layer, UV processing is carried out to substrate；（3）In the Grown N-type of process UV processing
Epitaxial layer, carries out UV processing simultaneously in N-type epitaxy layer growth course；（4）Outside the N-type that process UV processing grows simultaneously
Prolong and active epitaxial layer is grown on layer, carry out UV processing simultaneously in active epitaxial layer growth process；（5）At the process UV
The growing P-type epitaxial layer active epitaxial layer that reason grows simultaneously on, carries out UV processing simultaneously in p-type epitaxial layer growth process；
（6）N electrode and P electrode are made respectively the N-type and p-type epitaxial layer grown in process UV processing simultaneously in.
Preferably, the substrate selects sapphire or SiC or Si or GaN or GaAs or GaP, and the substrate is carried out at UV
The time of reason is 0.1 ~ 10 min, and UV light sources are UVLED, and UVLED wavelength is 1 ~ 380 nm, and UVLED light intensity is 0.1 ~ 1 000
000 mW/cm2, UVLED processing substrate during UVLED wavelength and light intensity can adjust.
Preferably, the N-type epitaxy layer of the Grown of process UVLED processing for the N AlInGaN adulterated or
AlGaInP or AlGaInAs quaternary or ternary or binary epitaxial layer or its any combination.
Preferably, the active epitaxial layer that process UV processing is grown on the N-type epitaxy layer of growth simultaneously for N or P or
The AlInGaN or AlGaInP of undoped or AlGaInAs quaternary or ternary or binary epitaxial layer or its any combination, Ke Yiwei
SQW or quantum dot or individual layer or its any combination structure.
Preferably, what the p-type epitaxial layer grown the active epitaxial layer that the process UV processing grows simultaneously on adulterated for P
AlInGaN or AlGaInP or AlGaInAs quaternary or ternary or binary epitaxial layer or its any combination.
Preferably, the UV light sources for carrying out UV processing simultaneously in each epitaxial layer growth process are UVLED, UVLED ripples
A length of 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm2, with layer epitaxial layer or different epitaxial layer growth process
UVLED wavelength and light intensity can adjust.
Preferably, it is described to use photoelectric device prepared by epitaxial growth method of the present invention for light emitting diode or solar-electricity
Pond or laser diode or FET device.
The preparation method of photoelectric device of the present invention, at least has the advantages that：
（1）After substrate is loaded into reative cell and before grown epitaxial layer, UV processing is carried out to substrate, UV light sources are
UVLED, can effectively reduce substrate caused surface during being put into slide glass dish and being loaded into reative cell organic or/and inorganic
Thing pollutes, it is ensured that the surface cleaning before grown epitaxial layer, it is to avoid the generation of surface defect after outer layer growth；
（2）Further, after UVLED processing Grown N-type, active and p-type epitaxial layer, in the life of each epitaxial layer
In growth process simultaneously carry out UV processing, UV light sources be UVLED, can effectively reduce it is each doping or it is non-mix AlInGaN, AlGaInP,
Point defect in many first epitaxial layers of AlGaInAs, lifts crystal mass, while the Mg-H passivation keys of P-type layer can be interrupted, therefore can
Effectively to lift N-type and P-type layer free carrier concentration and mobility, active area efficiency is lifted, and then improve photoelectric device
Performance, it is adaptable to semiconductor photoelectric device.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for specification, the reality with the present invention
Applying example is used to explain the present invention together, is not construed as limiting the invention.In addition, accompanying drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is the diagrammatic cross-section of the preparation method for the LED device that the embodiment of the present invention 1 is provided.
Fig. 2 be the embodiment of the present invention 2 provide solar cell device preparation method diagrammatic cross-section.
Indicated in figure：
100：Substrate； 101：Cushion；102：N-type epitaxy layer；103：Active light emissive epitaxial layer；104：P-type epitaxial layer；
105：N electrode；106：P electrode；107：Insulating protective layer；108：UVLED light.
200：Substrate； 201：Cushion；202：N-type epitaxy layer；203：Active light absorbs epitaxial layer；204：P-type extension
Layer；205：N electrode；206：P electrode；207：Insulating protective layer；208：UVLED light.
Embodiment
The preferred embodiment of the preparation method of the photoelectric device of the present invention is retouched in more detail below in conjunction with accompanying drawing
State.
Embodiment 1
As shown in figure 1, a kind of diagrammatic cross-section of the preparation method of LED device, comprises the following steps：
（1）A substrate 100 is provided, the substrate selects Al2O3, SiC, Si or GaN, the preferred Al of the present embodiment2O3Substrate；
（2）After the substrate 100 is loaded into reative cell and before grown epitaxial layer, UV processing, UV light are carried out to substrate
Source is UVLED, and the time of UVLED processing is 0.1 ~ 10 min, and UVLED wavelength is 1 ~ 380nm, and UVLED light intensity is 0.1 ~ 1 000
000 mW/cm2；
（3）The grown buffer layer 101 on the substrate 100 of process UVLED processing, cushion 101 is gallium nitride
（GaN）And/or aluminium nitride（AlN）Layer or its any combination, thickness is 5 ~ 50nm, same in the growth course of cushion 101
Shi Jinhang UV processing, UV light sources are UVLED, and UVLED wavelength is 1 ~ 380nm, and UVLED light intensity is 0.1 ~ 1 000 000 mW/
cm2；
（4）N-type epitaxy layer 102, N-type extension are grown on the cushion 101 that process UVLED processing grows simultaneously
Quaternary or ternary or binary epitaxial layer or its any combination that layer 102 is the AlInGaN that N adulterates, growth thickness is 10 ~ 10000
Nm, doping concentration is 1 × 1018~1×1021cm-3, the preferred SiH of doped source4, it is same in the growth course of N-type epitaxy layer 102
Shi Jinhang UVLED processing, UVLED wavelength is 1 ~ 380 nm, and UVLED light intensity is 0.1 ~ 1 000 000 mW/cm2；
（5）Active light emissive epitaxial layer is grown on the N-type epitaxy layer 102 that process UVLED processing grows simultaneously
103, quaternary or ternary or binary epitaxial layer that the active light emissive epitaxial layer 103 is the AlInGaN of N or P or undoped or its
Any combination, can be SQW or quantum dot or individual layer or its any combination structure, be given birth in the active light emissive epitaxial layer 103
UVLED processing is carried out in growth process simultaneously, UVLED wavelength is 1 ~ 380 nm, and UVLED light intensity is 0.1 ~ 1 000 000 mW/
cm2；
（6）The growing P-type epitaxial layer on the active light emissive epitaxial layer 103 that process UVLED processing grows simultaneously
104, quaternary or ternary or binary epitaxial layer or its any combination that p-type epitaxial layer 104 is the AlInGaN that P adulterates, thickness is 50
~ 300nm, doping concentration is 1 × 1019~1×1021cm-3, the preferred CP of doped source2Mg, in the growth course of p-type epitaxial layer 104
In simultaneously carry out UVLED processing, UVLED wavelength be 1 ~ 380 nm, UVLED light intensity be 0.1 ~ 1 000 000 mW/cm2；
（7）N is made respectively the N-type epitaxy layer 102 and p-type epitaxial layer 104 grown in process UVLED processing simultaneously in
Electrode 105 and P electrode 106.
（8）Insulating protective layer 107 is made on exposed epitaxial layer, for protecting epitaxial layer, luminous two are so completed
The preparation of pole pipe device.
Embodiment 2
As shown in Fig. 2 a kind of diagrammatic cross-section of the preparation method of solar cell device, comprises the following steps：
（1）A substrate 200 is provided, the substrate selects Al2O3, SiC, Si or GaN, the preferred Al of the present embodiment2O3Substrate；
（2）After the substrate 200 is loaded into reative cell and before grown epitaxial layer, substrate is carried out at UV processing, UV
The time of reason is 0.1 ~ 10 min, and UV light sources are UVLED, and UVLED wavelength is 1 ~ 380 nm, and UVLED light intensity is 0.1 ~ 1 000
000 mW/cm2；
（3）The grown buffer layer 201 on the substrate 200 of process UVLED processing, cushion 201 is gallium nitride
（GaN）And/or aluminium nitride（AlN）Layer or its any combination, thickness is 5 ~ 50nm, same in the growth course of cushion 201
Shi Jinhang UV processing, UV light sources are UVLED, and UVLED wavelength is 1 ~ 380 nm, and UVLED light intensity is 0.1 ~ 1 000 000 mW/
cm2；
（4）N-type epitaxy layer 202, N-type extension are grown on the cushion 201 that process UVLED processing grows simultaneously
Quaternary or ternary or binary epitaxial layer or its any combination that layer 202 is the AlInGaN that N adulterates, growth thickness is 10 ~ 10000
Nm, doping concentration is 1 × 1018~1×1021cm-3, the preferred SiH of doped source4, it is same in the growth course of N-type epitaxy layer 202
Shi Jinhang UVLED processing, UVLED wavelength is 1 ~ 380 nm, and UVLED light intensity is 0.1 ~ 1 000 000 mW/cm2；
（5）Active light absorbs epitaxial layer is grown on the N-type epitaxy layer 202 that process UVLED processing grows simultaneously
203, quaternary or ternary or binary epitaxial layer that the active light absorbs epitaxial layer 203 is the AlInGaN of N or P or undoped or
It is combined, and can be SQW or quantum dot or individual layer or its any combination structure, in the active light absorbs epitaxial layer
UVLED processing is carried out in 203 growth courses simultaneously, UVLED wavelength is 1 ~ 380 nm, and UVLED light intensity is 0.1 ~ 1 000 000
mW/cm2；
（6）The growing P-type epitaxial layer on the active light absorbs epitaxial layer 203 that process UVLED processing grows simultaneously
204, quaternary or ternary or binary epitaxial layer or its any combination that p-type epitaxial layer 204 is the AlInGaN that P adulterates, thickness is 50
~ 300nm, doping concentration is 1 × 1019~1×1021cm-3, the preferred CP of doped source2Mg, in the growth course of p-type epitaxial layer 204
In simultaneously carry out UVLED processing, UVLED wavelength be 1 ~ 380 nm, UVLED light intensity be 0.1 ~ 1 000 000 mW/cm2；
（7）N is made respectively the N-type epitaxy layer 202 and p-type epitaxial layer 204 grown in process UVLED processing simultaneously in
Electrode 205 and P electrode 206.
（8）Insulating protective layer 207 is made on exposed epitaxial layer, for protecting epitaxial layer, solar energy is so completed
The preparation of battery device.
The photoelectric device prepared by above-mentioned epitaxial growth method, substrate be loaded into reative cell after and grown epitaxial layer it
Before, UVLED processing is carried out to substrate, substrate table caused by during being put into slide glass dish and being loaded into reative cell can be effectively reduced
Face is organic or/and inorganic matter pollutes, it is ensured that the surface cleaning before grown epitaxial layer, it is to avoid the production of surface defect after outer layer growth
It is raw；Further, after UVLED processing Grown N-type, active and p-type epitaxial layer, in each outer layer growth mistake
UVLED processing is carried out in journey simultaneously, each doping can be effectively reduced or non-mix outside many members of AlInGaN, AlGaInP, AlGaInAs
Prolong the point defect in layer, lift crystal mass, while the Mg-H passivation keys of P-type layer can be interrupted, therefore can effectively be lifted N-type and
P-type layer free carrier concentration and mobility, lift active area efficiency, and then improve the performance of photoelectric device, it is adaptable to partly lead
Body photoelectric device.
It above represent the preferred embodiments of the present invention, it should be understood that those skilled in the art can change herein
The present invention of description, and still realize the advantageous effects of the present invention.Therefore, above description is appreciated that for this area skill
Art personnel's is widely known, and is not intended as limitation of the present invention, all any changes done according to the present invention, all belongs to the present invention
Protection domain within.
Claims (11)
1. a kind of preparation method of photoelectric device, comprises the following steps：
（1）One substrate is provided；
（2）After the substrate is loaded into reative cell and before grown epitaxial layer, UV processing is carried out to substrate；
（3）In the Grown N-type epitaxy layer of process UV processing, UV is carried out simultaneously in N-type epitaxy layer growth course
Processing；
（4）Active epitaxial layer is grown on the N-type epitaxy layer that process UV processing grows simultaneously, in active outer layer growth
During simultaneously carry out UV processing；
（5）The growing P-type epitaxial layer on the active epitaxial layer that process UV processing grows simultaneously, in p-type outer layer growth
During simultaneously carry out UV processing；
（6）N electrode and P electrode are made respectively the N-type and p-type epitaxial layer grown in process UV processing simultaneously in.
2. the preparation method of photoelectric device according to claim 1, it is characterised in that：The substrate is Al2O3Or SiC or
Si or GaN or GaAs or GaP.
3. the preparation method of photoelectric device according to claim 1, it is characterised in that：UV processing is carried out to the substrate
Time is 0.1 ~ 10 min.
4. the preparation method of photoelectric device according to claim 1, it is characterised in that：UV processing is carried out to the substrate
UV light sources are UVLED, and UVLED wavelength is the UVLED Wavelength tunable sections during 1 ~ 380 nm, UVLED processing substrates.
5. the preparation method of photoelectric device according to claim 1, it is characterised in that：UV processing is carried out to the substrate
UVLED light intensity is 0.1 ~ 1 000 000 mW/cm2, UVLED processing substrate during UVLED light intensity can adjust.
6. the preparation method of photoelectric device according to claim 1, it is characterised in that：The lining of the process UVLED processing
The N-type epitaxy layer grown on bottom is the AlInGaN that N adulterates or AlGaInP or AlGaInAs quaternary or ternary or binary extension
Layer or its any combination.
7. the preparation method of photoelectric device according to claim 1, it is characterised in that：The process UVLED processing is simultaneously
The active epitaxial layer grown in the N-type epitaxy layer of growth is N or P or the AlInGaN or AlGaInP or AlGaInAs of undoped
Quaternary or ternary or binary epitaxial layer or its any combination, can be SQW or quantum dot or individual layer or its any combination knot
Structure.
8. the preparation method of photoelectric device according to claim 1, it is characterised in that：The process UVLED processing is simultaneously
On the active epitaxial layer of growth the p-type epitaxial layer that grows for the P AlInGaN adulterated or AlGaInP or AlGaInAs quaternary or
Ternary or binary epitaxial layer or its any combination.
9. the preparation method of photoelectric device according to claim 1, it is characterised in that：It is described in each epitaxial layer growth process
In to carry out the UV light sources of UV processing simultaneously be UVLED, UVLED wavelength is 1 ~ 380 nm, with layer epitaxial layer or the life of different epitaxial layer
UVLED Wavelength tunable sections in growth process.
10. the preparation method of photoelectric device according to claim 1, it is characterised in that：It is described in each outer layer growth mistake
The UVLED light intensity for carrying out UV processing in journey simultaneously is 0.1 ~ 1 000 000 mW/cm2, with layer epitaxial layer or different epitaxial layer lifes
UVLED light intensity in growth process can adjust.
11. the preparation method of photoelectric device according to claim 1, it is characterised in that：It is described to be given birth to using extension of the present invention
Photoelectric device prepared by rectangular method is light emitting diode or solar cell or laser diode or FET device.
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| CN110168752B (en) * | 2016-10-28 | 2022-02-22 | 亮锐有限责任公司 | Method for growing light emitting device under ultraviolet irradiation |
| US10541352B2 (en) | 2016-10-28 | 2020-01-21 | Lumileds Llc | Methods for growing light emitting devices under ultra-violet illumination |
| CN106711283B (en) * | 2016-12-27 | 2019-05-24 | 南京理工大学 | A kind of all print zinc oxide nanocrystalline base ultraviolet light electric explorer preparation method |
| CN111628022B (en) * | 2019-02-28 | 2022-07-15 | 中国科学院物理研究所 | GaAs-based photoelectric device and preparation method of array thereof |
| CN111952424B (en) * | 2020-08-11 | 2022-06-14 | 吴小明 | Preparation method of AlGaInN-based LED with P-face passivation layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145224C (en) * | 1998-05-08 | 2004-04-07 | 三星电子株式会社 | Method of activating compound semiconductor layer to P-type compound semiconductor layer |
| CN103872192A (en) * | 2014-03-07 | 2014-06-18 | 聚灿光电科技(苏州)有限公司 | Manufacturing method for LED (Light Emitting Diode) chip |
| CN104091872A (en) * | 2014-07-30 | 2014-10-08 | 湘能华磊光电股份有限公司 | LED epitaxial wafer diffused through Mg, growing method and LED structure |
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| KR20110057541A (en) * | 2009-11-24 | 2011-06-01 | 삼성엘이디 주식회사 | Nitride semiconductor light emitting device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145224C (en) * | 1998-05-08 | 2004-04-07 | 三星电子株式会社 | Method of activating compound semiconductor layer to P-type compound semiconductor layer |
| CN103872192A (en) * | 2014-03-07 | 2014-06-18 | 聚灿光电科技(苏州)有限公司 | Manufacturing method for LED (Light Emitting Diode) chip |
| CN104091872A (en) * | 2014-07-30 | 2014-10-08 | 湘能华磊光电股份有限公司 | LED epitaxial wafer diffused through Mg, growing method and LED structure |
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