CN104638070A - Preparation method for photoelectric device - Google Patents
Preparation method for photoelectric device Download PDFInfo
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- CN104638070A CN104638070A CN201510099385.6A CN201510099385A CN104638070A CN 104638070 A CN104638070 A CN 104638070A CN 201510099385 A CN201510099385 A CN 201510099385A CN 104638070 A CN104638070 A CN 104638070A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000407 epitaxy Methods 0.000 claims description 20
- 239000002096 quantum dot Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 229910019080 Mg-H Inorganic materials 0.000 abstract description 3
- 238000011068 loading method Methods 0.000 abstract description 3
- 238000013508 migration Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 46
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a preparation method for a photoelectric device. The preparation method comprises the following steps: performing UVLED (ultraviolet light-emitting diode) processing on a substrate after loading the substrate into a reaction chamber and before growing an epitaxial layer, thereby effectively reducing surface organic or/and inorganic substance pollution caused by processes of putting the substrate into a slide glass plate and loading the substrate into the reaction chamber, enabling the surface to be clean before growing the epitaxial layer and avoiding surface defects after growing the epitaxial layer; growing N-type, active and P-type epitaxial layers on the substrate subjected to the UVLED processing and performing UVLED processing in each epitaxial layer growing process, thereby effectively reducing point defects in each of doped or non-doped AlInGaN, AlGaInP, AlGaInAs multi-element epitaxial layers, improving the crystal quality and breaking Mg-H passivated bonds of the P-type layer. Therefore, free carrier concentration and migration rate of the N-type and P-type layers can be effectively increased, the active region efficiency is improved, and the performances of the photoelectric device is improved. The preparation method is suitable for a semiconductor photoelectric device.
Description
Technical field
The invention belongs to optical semiconductor electro-technical field, be specifically related to a kind of preparation method of photoelectric device.
Background technology
Along with semiconductor photoelectric device (such as light-emitting diode and solar cell) apply more and more extensive, improve the research emphasis that its photoelectric properties have become industry further.Conventional epitaxial layer growth, because defect is many, affect crystal growth quality, affect carrier mobility, and then affect device performance, and, the process that substrate is putting into slide glass dish and loading reative cell may cause surface contamination, can blemish be caused after outer layer growth, therefore, be necessary that a kind of new epitaxial growth method of invention is to improve above problem.
Summary of the invention
For the problems referred to above, the invention provides a kind of preparation method of photoelectric device, not only ensure that substrate is clean before outer layer growth, avoid causing blemish, and can epitaxial layer defects be reduced, promote crystal mass, promote carrier mobility, thus improve the performance of device.
A preparation method for photoelectric device, comprises the following steps: (1) provides a substrate; (2) after described substrate is loaded into reative cell and before grown epitaxial layer, UV process is carried out to substrate; (3) in the described Grown N-type epitaxy layer through UV process, in N-type epitaxy layer growth course, carry out UV process simultaneously; (4) on the described N-type epitaxy layer simultaneously grown through UV process, grow active epitaxial loayer, in active epitaxial layer growth process, carry out UV process simultaneously; (5) growing P-type epitaxial loayer on the described active epitaxial loayer simultaneously grown through UV process, carries out UV process in P type epitaxial layer growth process simultaneously; (6) in the described N-type that simultaneously grows through UV process and P type epitaxial loayer, N electrode and P electrode is made respectively.
Preferably, described substrate selects sapphire or SiC or Si or GaN or GaAs or GaP, and the time of carrying out UV process to described substrate is 0.1 ~ 10 min, UV light source be UVLED, UVLED wavelength be 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2, the UVLED wavelength in UVLED process substrate process and light intensity all adjustable.
Preferably, the N-type epitaxy layer of the described Grown through UVLED process is AlInGaN or AlGaInP of N doping or the quaternary of AlGaInAs or ternary or binary epitaxial loayer or its combination in any.
Preferably, the active epitaxial loayer grown on the described N-type epitaxy layer simultaneously grown through UV process is AlInGaN or AlGaInP of N or P or undoped or the quaternary of AlGaInAs or ternary or binary epitaxial loayer or its combination in any, can be quantum well or quantum dot or individual layer or its combination in any structure.
Preferably, the P type epitaxial loayer grown on the described active epitaxial loayer simultaneously grown through UV process is AlInGaN or AlGaInP of P doping or the quaternary of AlGaInAs or ternary or binary epitaxial loayer or its combination in any.
Preferably, the described UV light source simultaneously carrying out UV process in each epitaxial layer growth process is UVLED, UVLED wavelength be 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2, with the UVLED wavelength in layer epitaxial loayer or different epitaxial layer growth process and light intensity all adjustable.
Preferably, the photoelectric device that prepared by described employing epitaxial growth method of the present invention is light-emitting diode or solar cell or laser diode or field effect transistor device.
The preparation method of photoelectric device of the present invention, at least has following beneficial effect:
(1) after substrate is loaded into reative cell and before grown epitaxial layer, UV process is carried out to substrate, UV light source is UVLED, can effectively reduce substrate put into slide glass dish and be loaded into the surface that the process of reative cell causes organic or/and inorganic pollution, ensure to clean at grown epitaxial layer front surface, avoid the generation of outer layer growth rear surface defect;
(2) further, Grown N-type after UVLED process, active and P type epitaxial loayer, carry out UV process in each epitaxial layer growth process simultaneously, UV light source is UVLED, effectively can reduce each doping or non-point defect of mixing in the many first epitaxial loayers of AlInGaN, AlGaInP, AlGaInAs, promote crystal mass, the Mg-H passivation key of P-type layer can be interrupted simultaneously, therefore N-type and P-type layer free carrier concentration and mobility can effectively be promoted, promote active area efficiency, and then improve the performance of photoelectric device, be applicable to semiconductor photoelectric device.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
The generalized section of the preparation method of the LED device that Fig. 1 provides for the embodiment of the present invention 1.
The preparation method of the solar cell device that Fig. 2 provides for the embodiment of the present invention 2 generalized section.
Indicate in figure:
100: substrate; 101: resilient coating; 102:N type epitaxial loayer; 103: active light emissive epitaxial loayer; 104:P type epitaxial loayer; 105:N electrode; 106:P electrode; 107: insulating protective layer; 108:UVLED light.
200: substrate; 201: resilient coating; 202:N type epitaxial loayer; 203: active light absorption epitaxial loayer; 204:P type epitaxial loayer; 205:N electrode; 206:P electrode; 207: insulating protective layer; 208:UVLED light.
Embodiment
Be described in more detail below in conjunction with the preferred embodiment of accompanying drawing to the preparation method of photoelectric device of the present invention.
embodiment 1
As shown in Figure 1, the generalized section of a kind of preparation method of LED device, comprises the following steps:
(1) provide a substrate 100, described substrate selects Al
2o
3, SiC, Si or GaN, the preferred Al of the present embodiment
2o
3substrate;
(2) after described substrate 100 is loaded into reative cell and before grown epitaxial layer, carry out UV process to substrate, UV light source is the time of UVLED, UVLED process be 0.1 ~ 10 min, UVLED wavelength be 1 ~ 380nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(3) described on the substrate 100 of UVLED process grown buffer layer 101, resilient coating 101 is gallium nitride (GaN) and/or aluminium nitride (AlN) layer or its combination in any, thickness is 5 ~ 50nm, carry out UV process in described resilient coating 101 growth course simultaneously, UV light source is UVLED, UVLED wavelength is 1 ~ 380nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(4) on the described resilient coating 101 simultaneously grown through UVLED process, N-type epitaxy layer 102 is grown, the quaternary of the AlInGaN that N-type epitaxy layer 102 is adulterated for N or ternary or binary epitaxial loayer or its combination in any, growth thickness is 10 ~ 10000 nm, and doping content is 1 × 10
18~ 1 × 10
21cm
-3, the preferred SiH of doped source
4, in described N-type epitaxy layer 102 growth course, carry out UVLED process, UVLED wavelength is 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm simultaneously
2;
(5) on the described N-type epitaxy layer 102 simultaneously grown through UVLED process, active light emissive epitaxial loayer 103 is grown, described active light emissive epitaxial loayer 103 is the quaternary of the AlInGaN of N or P or undoped or ternary or binary epitaxial loayer or its combination in any, can be quantum well or quantum dot or individual layer or its combination in any structure, carry out UVLED process in described active light emissive epitaxial loayer 103 growth course simultaneously, UVLED wavelength is 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(6) growing P-type epitaxial loayer 104 on the described active light emissive epitaxial loayer 103 simultaneously grown through UVLED process, the quaternary of the AlInGaN that P type epitaxial loayer 104 adulterates for P or ternary or binary epitaxial loayer or its combination in any, thickness is 50 ~ 300nm, and doping content is 1 × 10
19~ 1 × 10
21cm
-3, the preferred CP of doped source
2mg, carries out UVLED process in described P type epitaxial loayer 104 growth course simultaneously, and UVLED wavelength is 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(7) in the described N-type epitaxy layer 102 that simultaneously grows through UVLED process and P type epitaxial loayer 104, N electrode 105 and P electrode 106 is made respectively.
(8) on exposed epitaxial loayer, make insulating protective layer 107, for the protection of epitaxial loayer, so complete the preparation of LED device.
embodiment 2
As shown in Figure 2, the generalized section of a kind of preparation method of solar cell device, comprises the following steps:
(1) provide a substrate 200, described substrate selects Al
2o
3, SiC, Si or GaN, the preferred Al of the present embodiment
2o
3substrate;
(2) after described substrate 200 is loaded into reative cell and before grown epitaxial layer, carry out UV process to substrate, the time of UV process is 0.1 ~ 10 min, UV light source be UVLED, UVLED wavelength be 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(3) described on the substrate 200 of UVLED process grown buffer layer 201, resilient coating 201 is gallium nitride (GaN) and/or aluminium nitride (AlN) layer or its combination in any, thickness is 5 ~ 50nm, carry out UV process in described resilient coating 201 growth course simultaneously, UV light source is UVLED, UVLED wavelength is 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(4) on the described resilient coating 201 simultaneously grown through UVLED process, N-type epitaxy layer 202 is grown, the quaternary of the AlInGaN that N-type epitaxy layer 202 is adulterated for N or ternary or binary epitaxial loayer or its combination in any, growth thickness is 10 ~ 10000 nm, and doping content is 1 × 10
18~ 1 × 10
21cm
-3, the preferred SiH of doped source
4, in described N-type epitaxy layer 202 growth course, carry out UVLED process, UVLED wavelength is 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm simultaneously
2;
(5) on the described N-type epitaxy layer 202 simultaneously grown through UVLED process, active light absorption epitaxial loayer 203 is grown, described active light absorption epitaxial loayer 203 is the quaternary of the AlInGaN of N or P or undoped or ternary or binary epitaxial loayer or its combination in any, can be quantum well or quantum dot or individual layer or its combination in any structure, carry out UVLED process in described active light absorption epitaxial loayer 203 growth course simultaneously, UVLED wavelength is 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(6) growing P-type epitaxial loayer 204 on the described active light absorption epitaxial loayer 203 simultaneously grown through UVLED process, the quaternary of the AlInGaN that P type epitaxial loayer 204 adulterates for P or ternary or binary epitaxial loayer or its combination in any, thickness is 50 ~ 300nm, and doping content is 1 × 10
19~ 1 × 10
21cm
-3, the preferred CP of doped source
2mg, carries out UVLED process in described P type epitaxial loayer 204 growth course simultaneously, and UVLED wavelength is 1 ~ 380 nm, UVLED light intensity is 0.1 ~ 1 000 000 mW/cm
2;
(7) in the described N-type epitaxy layer 202 that simultaneously grows through UVLED process and P type epitaxial loayer 204, N electrode 205 and P electrode 206 is made respectively.
(8) on exposed epitaxial loayer, make insulating protective layer 207, for the protection of epitaxial loayer, so complete the preparation of solar cell device.
By photoelectric device prepared by above-mentioned epitaxial growth method, after substrate is loaded into reative cell and before grown epitaxial layer, UVLED process is carried out to substrate, can effectively reduce substrate put into slide glass dish and be loaded into the surface that reative cell process causes organic or/and inorganic pollution, ensure to clean at grown epitaxial layer front surface, avoid the generation of outer layer growth rear surface defect; Further, Grown N-type after described UVLED process, active and P type epitaxial loayer, carry out UVLED process in each epitaxial layer growth process simultaneously, effectively can reduce each doping or non-point defect of mixing in the many first epitaxial loayers of AlInGaN, AlGaInP, AlGaInAs, promote crystal mass, the Mg-H passivation key of P-type layer can be interrupted simultaneously, therefore N-type and P-type layer free carrier concentration and mobility can effectively be promoted, promote active area efficiency, and then improve the performance of photoelectric device, be applicable to semiconductor photoelectric device.
Above represent the preferred embodiments of the present invention, it should be understood that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, above description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention, all any changes done according to the present invention, all belong within protection scope of the present invention.
Claims (11)
1. a preparation method for photoelectric device, comprises the following steps:
(1) substrate is provided;
(2) after described substrate is loaded into reative cell and before grown epitaxial layer, UV process is carried out to substrate;
(3) in the described Grown N-type epitaxy layer through UV process, in N-type epitaxy layer growth course, carry out UV process simultaneously;
(4) on the described N-type epitaxy layer simultaneously grown through UV process, grow active epitaxial loayer, in active epitaxial layer growth process, carry out UV process simultaneously;
(5) growing P-type epitaxial loayer on the described active epitaxial loayer simultaneously grown through UV process, carries out UV process in P type epitaxial layer growth process simultaneously;
(6) in the described N-type that simultaneously grows through UV process and P type epitaxial loayer, N electrode and P electrode is made respectively.
2. the preparation method of photoelectric device according to claim 1, is characterized in that: described substrate is Al
2o
3or SiC or Si or GaN or GaAs or GaP.
3. the preparation method of photoelectric device according to claim 1, is characterized in that: the time of described substrate being carried out to UV process is 0.1 ~ 10 min.
4. the preparation method of photoelectric device according to claim 1, is characterized in that: the UV light source carrying out UV process to the described substrate UVLED Wavelength tunable joint that to be UVLED, UVLED wavelength be in 1 ~ 380 nm, UVLED process substrate process.
5. the preparation method of photoelectric device according to claim 1, is characterized in that: the UVLED light intensity of described substrate being carried out to UV process is 0.1 ~ 1 000 000 mW/cm
2, the UVLED light intensity in UVLED process substrate process is adjustable.
6. the preparation method of photoelectric device according to claim 1, is characterized in that: the N-type epitaxy layer of the described Grown through UVLED process is AlInGaN or AlGaInP of N doping or the quaternary of AlGaInAs or ternary or binary epitaxial loayer or its combination in any.
7. the preparation method of photoelectric device according to claim 1, it is characterized in that: the active epitaxial loayer that the described N-type epitaxy layer simultaneously grown through UVLED process grows is AlInGaN or AlGaInP of N or P or undoped or the quaternary of AlGaInAs or ternary or binary epitaxial loayer or its combination in any, can be quantum well or quantum dot or individual layer or its combination in any structure.
8. the preparation method of photoelectric device according to claim 1, is characterized in that: the P type epitaxial loayer that the described active epitaxial loayer simultaneously grown through UVLED process grows is AlInGaN or AlGaInP of P doping or the quaternary of AlGaInAs or ternary or binary epitaxial loayer or its combination in any.
9. the preparation method of photoelectric device according to claim 1, it is characterized in that: the described UV light source simultaneously carrying out UV process in each epitaxial layer growth process is UVLED, UVLED wavelength is 1 ~ 380 nm, with the UVLED Wavelength tunable joint in layer epitaxial loayer or different epitaxial layer growth process.
10. the preparation method of photoelectric device according to claim 1, is characterized in that: described UVLED light intensity of simultaneously carrying out UV process in each epitaxial layer growth process is 0.1 ~ 1 000 000 mW/cm
2, adjustable with the UVLED light intensity in layer epitaxial loayer or different epitaxial layer growth process.
The preparation method of 11. photoelectric devices according to claim 1, is characterized in that: photoelectric device prepared by described employing epitaxial growth method of the present invention is light-emitting diode or solar cell or laser diode or field effect transistor device.
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| CN106711283A (en) * | 2016-12-27 | 2017-05-24 | 南京理工大学 | Manufacturing method of all-print zinc oxide nanocrystalline based ultraviolet photoelectric detector |
| WO2018081635A1 (en) * | 2016-10-28 | 2018-05-03 | Lumileds Llc | Methods for growing light emitting devices under ultra-violet illumination |
| KR20190076011A (en) * | 2016-10-28 | 2019-07-01 | 루미레즈 엘엘씨 | Methods for growing light emitting devices under ultraviolet irradiation |
| CN111628022A (en) * | 2019-02-28 | 2020-09-04 | 中国科学院物理研究所 | GaAs-based photoelectric device and preparation method of array thereof |
| CN111952424A (en) * | 2020-08-11 | 2020-11-17 | 吴小明 | Preparation method of AlGaInN-based LED with P-surface passivation layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102281223B1 (en) * | 2016-10-28 | 2021-07-22 | 루미레즈 엘엘씨 | Methods for growing light emitting devices under ultraviolet irradiation |
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| TWI745465B (en) * | 2016-10-28 | 2021-11-11 | 荷蘭商露明控股公司 | Methods for growing light emitting devices under ultra-violet illumination |
| CN106711283A (en) * | 2016-12-27 | 2017-05-24 | 南京理工大学 | Manufacturing method of all-print zinc oxide nanocrystalline based ultraviolet photoelectric detector |
| CN111628022A (en) * | 2019-02-28 | 2020-09-04 | 中国科学院物理研究所 | GaAs-based photoelectric device and preparation method of array thereof |
| CN111628022B (en) * | 2019-02-28 | 2022-07-15 | 中国科学院物理研究所 | GaAs-based photoelectric device and preparation method of array thereof |
| CN111952424A (en) * | 2020-08-11 | 2020-11-17 | 吴小明 | Preparation method of AlGaInN-based LED with P-surface passivation layer |
| CN111952424B (en) * | 2020-08-11 | 2022-06-14 | 吴小明 | Preparation method of AlGaInN-based LED with P-face passivation layer |
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| CN104638070B (en) | 2017-08-18 |
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