CN104630774A - Etching gas and application thereof - Google Patents
Etching gas and application thereof Download PDFInfo
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- CN104630774A CN104630774A CN201510091538.2A CN201510091538A CN104630774A CN 104630774 A CN104630774 A CN 104630774A CN 201510091538 A CN201510091538 A CN 201510091538A CN 104630774 A CN104630774 A CN 104630774A
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- etching gas
- polysilicon
- etching
- composite membrane
- application
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Abstract
The invention relates to the field of semiconductor manufacturing and processing, and in particular relates to an etching gas and application thereof. The etching gas provided by the invention contains CF4 and O2, and one or more of Cl2, SF6, HBr, and CHF3. After the above etching gas is used for etching a polycrystalline silicon-silicon nitride-polycrystalline silicon composite film, the side wall dip angle of the composite film can achieve 90 DEG, and the selection ratio of the polycrystalline to photoresist is improved.
Description
Technical field
The present invention relates to semiconductor fabrication process field, particularly relate to a kind of etching gas and application thereof.
Background technology
Microelectronics has become the label of information age, and in microelectronics, the manufacture of one piece of integrated circuit (IC) chip completes, and needs through operations such as integrated circuit (IC) design, mask plate manufacture, starting materials manufacture, chip manufacture, encapsulation, tests.Wherein, the technology etching formation process groove is carried out to semi-conductor silicon chip, seem particularly crucial.
Etching is a considerable step in semiconductor fabrication process, microelectronics IC manufacturing process and minute manufacturing technique, is a kind of important process of the graphical treatment be associated with photoetching.
After silicon chip surface successively deposited polycrystalline silicon thin film, silicon nitride film and polysilicon membrane, form composite membrane, make, with photoresist as the mask plate of composite membrane, for the lithographic method of composite membrane, generally to use plasma dry etch, tradition uses HBr and Cl
2combination of gases or CF
4and O
2combination of gases.Use HBr and Cl
2combination of gases, this technique can only reach about 82 ° to the sidewall inclination angle that obtains after composite membrane etching, uses CF
4and O
2combination of gases, nearly 90 °, the sidewall inclination angle obtained, but due to O
2very fast to the etch rate of photoresist material, cause the selection and comparison of polysilicon to photoresist material low.
Because above-mentioned defect, the design people, actively in addition research and innovation, to founding a kind of etching gas and application thereof, make it have more utility value in industry.
Summary of the invention
For solving the problems of the technologies described above, the object of this invention is to provide a kind of etching gas, for the etching of polysilicon-silicon nitride-Polysilicon Composite Structures film, after making etching, the sidewall inclination angle of composite membrane reaches 90 °, and improves the Selection radio of polysilicon to photoresist material.
A kind of etching gas that the present invention proposes, containing CF
4and O
2two kinds of gases, and Cl
2, SF
6, HBr, CHF
3in one or more gases.
Further, described etching gas is CF
4, O
2and Cl
2, described CF
4, O
2and Cl
2volume ratio is 16:1:8.
Present invention also offers the application of this etching gas, described etching gas is used for the etching of polysilicon-silicon nitride-Polysilicon Composite Structures film.
Further, as the CF of adopted etching gas to be volume ratio be 16:1:8
4, O
2and Cl
2time, described etching gas is when etch polysilicon-silicon nitride-Polysilicon Composite Structures film, and temperature range is 40-60 °, and pressure range is 150-250mtorr.
By such scheme, the present invention at least has the following advantages: use this etching gas etch polysilicon-silicon nitride-Polysilicon Composite Structures film, and after etching, the sidewall inclination angle of composite membrane reaches 90 °, and improves the Selection radio of polysilicon to photoresist material.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technique means of the present invention, and can be implemented according to the content of specification sheets, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.
Accompanying drawing explanation
Fig. 1 is the schematic diagram at sidewall inclination angle in the present invention.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
A kind of etching gas described in a preferred embodiment of the present invention is used for etch polysilicon-silicon nitride-Polysilicon Composite Structures film, and (described polysilicon-silicon nitride-Polysilicon Composite Structures film is referred to as composite membrane below, in FIG, described 1 polysilicon being denoted as composite membrane, 2 silicon nitrides being denoted as composite membrane), when etching, this composite membrane makes with photoresist 3 for mask plate.Above-mentioned etching gas comprises CF
4and O
2two kinds of gases, and Cl
2, SF
6, HBr, CHF
3in one or more gases.In the present embodiment, this etching gas comprises CF
4, O
2and Cl
2, wherein CF
4, O
2and Cl
2volume ratio is 16:1:8.
Above-mentioned etching gas etch composite membrane time, CF
4, O
2and Cl
2gas flow be respectively 80sccm, 5sccm, 40sccm, the temperature range of etching is 40-60 °, and pressure range is 150-250mtorr.
CF
4can form carbon containing polymer overmold with composite membrane is etched on the sidewall in district at composite membrane; Add O
2after, in etching process, the generation of the top of the region composite that is etched film sidewall and the carbon containing polymer uniform of root and stripping, make the sidewall inclination angle (as shown in angle [alpha] in Fig. 1) etching rear composite membrane be 90 °, but O
2too fast to the consumption of photoresist material 3, the selection and comparison of polysilicon 1 pair of photoresist material 3 can be caused low; And Cl
2the speed ratio etching photoresist material 3 of etch polysilicon 1 is fast, thus improves the Selection radio of polysilicon 1 pair of photoresist material 3, but Cl
2for composite membrane be etched district sidewall on the carbon polymer that formed, the etch rate of its top side wall is greater than the etch rate of sidewall bottom, Cl
2the too high meeting of ratio causes sidewall inclination angle to be less than 90 degree.
When using above-mentioned etching gas, work as CF
4gas flow is 120sccm, O
2gas flow is 5sccm, Cl
2when gas flow is 0, the sidewall inclination angle of the composite membrane after etching is 90 °, but the speed of this gas etching photoresist material 3 is very fast, and the Selection radio of polysilicon 1 pair of photoresist material 3 is less than 1 (see table 1), when etching the composite membrane of about 1.5 μm, photoresist material 3 mask plate of 2 μm can protect deficiency; Add Cl
2after, when to control its gas flow be 40sccm, CF
4gas flow is 80sccm, O
2gas flow is 5sccm, and the sidewall inclination angle obtained is 90 °, and on composite membrane, figure thinning area is consistent with the sidewall inclination angle in graphics intensive region, meanwhile, and Cl
2speed to photoresist material 3 is greater than to the etch rate of polysilicon 1, improves the Selection radio to 1.91 (see table 1) of polysilicon 1 pair of photoresist material 3; As continued to improve Cl
2gas flow, works as Cl
2gas flow is 40-90sccm, CF
4gas flow is 80-40sccm, O
2gas flow is 5sccm, time, due to Cl
2to the carbon polymer that composite membrane is formed, the etch rate at its top is greater than the etch rate of bottom, and therefore sidewall inclination angle scope is 90 ° to 80 °.
The polysilicon that table 1 different etching gas etching composite membrane obtains is to the Selection radio of photoresist material
In sum, the etching gas that the present invention proposes, when etch polysilicon-silicon nitride-Polysilicon Composite Structures film, can obtain the sidewall inclination angle of 90 °, and the selection and comparison of polysilicon to photoresist material is high, the demand in etching technics can be met, enhance productivity and Product Precision, and by regulating the ratio of mixed gas, the sidewall inclination angle of composite membrane can be controlled, meets the different demands in etching technics.
The above is only the preferred embodiment of the present invention; be not limited to the present invention; should be understood that; for those skilled in the art; under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.
Claims (4)
1. an etching gas, is characterized in that: containing CF
4and O
2two kinds of gases, and Cl
2, SF
6, HBr, CHF
3in one or more gases.
2. a kind of etching gas according to claim 1, is characterized in that: described etching gas is CF
4, O
2and Cl
2, described CF
4, O
2and Cl
2volume ratio is 16:1:8.
3. the application of etching gas according to claim 1 and 2, is characterized in that: described etching gas is used for the etching of polysilicon-silicon nitride-Polysilicon Composite Structures film.
4. the application of etching gas according to claim 3, is characterized in that: as the CF of adopted etching gas to be volume ratio be 16:1:8
4, O
2and Cl
2time, described etching gas is when etch polysilicon-silicon nitride-Polysilicon Composite Structures film, and temperature range is 40-60 °, and pressure range is 150-250mtorr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510091538.2A CN104630774A (en) | 2015-02-28 | 2015-02-28 | Etching gas and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510091538.2A CN104630774A (en) | 2015-02-28 | 2015-02-28 | Etching gas and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104630774A true CN104630774A (en) | 2015-05-20 |
Family
ID=53210008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510091538.2A Pending CN104630774A (en) | 2015-02-28 | 2015-02-28 | Etching gas and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104630774A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1172343A (en) * | 1996-05-15 | 1998-02-04 | 三星电子株式会社 | Method for forming gate having polyside structure |
| US20070235413A1 (en) * | 2004-11-03 | 2007-10-11 | Chih-Ming Chen | Method of forming si tip by single etching process and its application for forming floating gate |
| CN101271831A (en) * | 2007-03-23 | 2008-09-24 | 海力士半导体有限公司 | Method for fabricating semiconductor device |
-
2015
- 2015-02-28 CN CN201510091538.2A patent/CN104630774A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1172343A (en) * | 1996-05-15 | 1998-02-04 | 三星电子株式会社 | Method for forming gate having polyside structure |
| US20070235413A1 (en) * | 2004-11-03 | 2007-10-11 | Chih-Ming Chen | Method of forming si tip by single etching process and its application for forming floating gate |
| CN101271831A (en) * | 2007-03-23 | 2008-09-24 | 海力士半导体有限公司 | Method for fabricating semiconductor device |
Non-Patent Citations (2)
| Title |
|---|
| 崔铮: "《微纳米加工技术及其应用》", 31 May 2009, 高等教育出版社 * |
| 约翰A.斯奇著，王贵明等译: "《制造方法基础与提高》", 31 July 2004, 机械工业出版社 * |
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Application publication date: 20150520 |
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