CN104617202A - Electrode system of gallium nitride-based luminescent device and manufacturing method of electrode system - Google Patents
Electrode system of gallium nitride-based luminescent device and manufacturing method of electrode system Download PDFInfo
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- CN104617202A CN104617202A CN201510017329.3A CN201510017329A CN104617202A CN 104617202 A CN104617202 A CN 104617202A CN 201510017329 A CN201510017329 A CN 201510017329A CN 104617202 A CN104617202 A CN 104617202A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
A kind of electrode system of gallium nitride base light-emitting device and preparation method thereof, wherein gallium nitride base light-emitting device, comprising: a transparent substrates; One first semiconductor layer, an active layer and one second semiconductor layer, first semiconductor layer are opposite with the conduction type of the second semiconductor layer; One p-type contact layer is the first semiconductor layer or the surface of the second semiconductor layer of majority carrier positioned at hole, is
Metal conductive oxide film; The reflecting mirror of one Ag or Al is located in P type contact layer, and the reflecting mirror of the Ag or Al are directly contacted with P type contact layer; One P electrode pad is made of on the reflecting mirror of Ag or Al multiple layer metal, and multiple layer metal includes metal diffusion barrier layer and welding layer. The present invention can increase transmissivity, improve the luminous efficiency of luminescent device.
Description
Technical field
The present invention relates to a kind of gallium nitride base light-emitting device.More specifically, P-type electrode system that the present invention relates to a kind of gallium nitride base light-emitting device and preparation method thereof.
Background technology
In recent years, the luminous efficiency of gallium nitride base light-emitting device is greatly improved, and the luminous efficiency as gallium nitride based light emitting diode on market (LED) illuminating product reaches more than 150lm/W, and laboratory level reaches 300lm/W.Along with gallium nitride illumination device is in the extensive use of each side such as illumination, display, projection, requires to improve its electricity conversion further, improve its heat dispersion and reliability.
In gallium nitride base light-emitting device, because the hole concentration of p-type gallium nitride is less than 10
18cm
-3, the work function of gallium nitride is between 6.5-7.5eV, and the highest Pt metal of work function only has 5.65eV, therefore, p-type gallium nitride forms ohmic contact more difficult.
Gallium nitride based light emitting diode is structurally divided into positive assembling structure, inverted structure and vertical stratification.The light-emitting diode of upside-down mounting and vertical stratification has good heat dispersion, is suitable for powerful application, is more and more subject to the favor of application market.In positive assembling structure, require p-type electrode has higher transmissivity.Multiplex NiAu and metal oxide in prior art, if ITO is as the contact electrode of p-type gallium nitride, but the transmissivity of the blue light to 450-470nm of NiAu electrode is between 50%-70%, the transmissivity of ITO is higher, about more than 80%, but along with the increase of ITO thickness, transmissivity suppression ratio is more serious.
For the upside-down mounting down of p-type gallium nitride and the luminescent device of vertical stratification, require p-type electrode not only will form ohmic contact with p-type gallium nitride, requires to have good adhesiveness and reliability simultaneously, also will form speculum.In prior art, conventional NiAg electrode system forms p-type reflecting electrode.But it is to visible light reflectance, especially the blue light reflectance of 400470nm can reduce greatly along with the increase of Ni layer thickness.Also have in prior art and Ni is thinned to below 10nm to reduce its absorption to light, but reducing Ni layer thickness can allow again contact resistance raise, and operating voltage is also raised, thus the luminous efficiency of reduction luminescent device.
Therefore, need one can be applicable to upside-down mounting and vertical stratification p-type contact electrode system, both can form good ohmic contact, also there is good adhesiveness and higher reflectivity, simultaneously compatible, reproducible with existing LED production technology, thus can production cost be reduced.
Summary of the invention
The object of the invention is to, provide electrode system of a kind of gallium nitride base light-emitting device and preparation method thereof, the present invention can increase transmissivity, improves the luminous efficiency of luminescent device.
The invention provides a kind of gallium nitride base light-emitting device, comprising:
One transparent substrates;
One first semiconductor layer, an active layer and one second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
One P type contact layer, being positioned at hole is the first semiconductor layer of majority carrier or the surface of the second semiconductor layer, and it is
metal conductive oxide film;
The speculum of one Ag or Al, is positioned in P type contact layer, and the speculum of described Ag or Al directly contacts with P type contact layer;
One P electrode pad, on the speculum of Ag or Al, is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer.
The present invention also provides a kind of gallium nitride LED chip, comprising:
One transparent substrates;
One first semiconductor layer, active layer and the second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
One P type contact layer, being positioned at hole is the first semiconductor layer of majority carrier or the surface of the second semiconductor layer, and it is
metal conductive oxide film;
The speculum of one Ag or Al, is positioned in P type contact layer, and the speculum of described Ag or Al directly contacts with P type contact layer;
One P electrode pad, on the speculum of Ag or Al, is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer;
One N-shaped metal electrode, is positioned on the first or second semiconductor layer that the electronics exposed is majority carrier;
Described N-shaped metal electrode part covers p-electrode pad, between the p-electrode pad that N-shaped metal electrode and part cover, form the spacer medium layer be made up of the polycrystalline of different carbon atom arrangement structure or monocrystalline.
The present invention reoffers a kind of manufacture method of gallium nitride base light-emitting device, and it comprises following steps:
One transparent substrates;
Form the first semiconductor layer on a transparent substrate, an active layer and one second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
Be that the first semiconductor layer of majority carrier or the surface of the second semiconductor layer form P type contact layer in hole, it is
metal conductive oxide film;
P type contact layer is formed the speculum of Ag or Al, and the speculum of described Ag or Al directly contacts with P type contact layer;
The speculum of Ag or Al is formed p-electrode pad, and described p-electrode pad is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer.
The present invention provides again a kind of manufacture method of gallium nitride LED chip, and it comprises the steps:
One transparent substrates;
Form the first semiconductor layer on a transparent substrate, active layer and the second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
Be that the first semiconductor layer of majority carrier or the surface of the second semiconductor layer form P type contact layer in hole, it is
metal conductive oxide film;
P type contact layer is formed the speculum of Ag or Al, the speculum of described Ag or Al directly contacts with P type contact layer;
The speculum of Ag or Al is formed p-electrode pad, and described p-electrode pad is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer;
At the electronics exposed be majority carrier the first or second semiconductor layer on form n metal electrode;
Described N-shaped metal electrode part covers p-electrode pad, between the p-electrode pad that N-shaped metal electrode and part cover, form the spacer medium layer be made up of the polycrystalline of different carbon atom arrangement structure or monocrystalline.
The invention has the beneficial effects as follows: the present invention can increase transmissivity, improve the luminous efficiency of luminescent device.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, wherein:
The end view of the luminescent device described in Fig. 1 first embodiment of the invention;
The end view of the luminescent device described in Fig. 2 second embodiment of the invention;
The end view of the light-emitting diode chip for backlight unit described in Fig. 3 third embodiment of the invention;
The vertical view of the light-emitting diode chip for backlight unit shown in Fig. 4 and Fig. 5 third embodiment of the invention;
Fig. 6 comprises the end view of the inverted structure light-emitting diode of the light-emitting diode chip for backlight unit of third embodiment of the invention;
Fig. 7 comprises the end view of the membrane structure light-emitting diode of the light-emitting diode chip for backlight unit of third embodiment of the invention.
Embodiment
Luminescent device according to the first embodiment of the present invention, as shown in Figure 1.
Form Al over the substrate 10
xin
yga
1-x-yn (0≤x≤1,0≤y≤1) epitaxial loayer, comprise the first semiconductor layer 11, active layer 12 and the second semiconductor layer 13, described first semiconductor layer 11 is different with the conduction type of the second semiconductor layer 13.
With the second semiconductor layer 13 for p-type Al
xin
yga
1-x-yn is example explanation.
Second semiconductor layer 13 forms P type contact layer 141, described P type contact layer 141 forms speculum 142.
Described P type contact layer 141 is made up of ITO that (component is In
2o
3and SnO
2), thickness is
be preferably
formed by methods such as sputtering or electron beam evaporations, the speed of deposition is less than
preferably be less than
to be less than or equal to
for the best.Anneal to ITO after deposition, carry out in oxygen or nitrogen atmosphere, annealing temperature is 400-600 DEG C, is preferably 450-550 DEG C, annealing time 5-60 minute.
Described speculum 142 is NiAg, AgTi, AlTi or NiAl, and be preferably AgTi or AlTi, can be the Ti of individual layer Ag and individual layer, also can be the AgTi of multilayer, NiAg, AgTi, AlTi or NiAl gross thickness be
formed by electron beam evaporation, sputtering or thermal evaporation, formation temperature is less than 300 DEG C, is preferably less than 280 DEG C.
Alternatively, speculum 142 forms p-electrode pad 143, described P type contact layer 141, speculum 142 and p-electrode pad 143 be composition p-type electrode layer 14 jointly, as shown in Figure 2.Described p-electrode pad 143 can adopt multiple layer metal to form, the good metal of the preferred adhesiveness of the bottom metal layer contacted with speculum 142, as the metal of Cr, Ti, Ni, the superiors' metal adopts the metals such as Au or Al, can insert the barrier metal layers such as Pt for preventing the diffusion of Au and Al between bottom metal layer and topmost metal layer.The metal systems such as preferred employing CrPtAu or AlTiAu are as p-electrode pad 143.
According to a second embodiment of the present invention, alternatively, described p-electrode pad 143 covers speculum 142 completely, and namely p-electrode pad 143 covers the sidewall of speculum 142, and exceed the edge 1-10um of speculum 142, the thickness of p-electrode pad 143 exists
at least want complete coated speculum 142, damage speculum 142 to prevent p-electrode pad 143 patterning process; Meanwhile, control the layers of material of p-electrode pad 143, thickness is selected and growth temperature, avoid its larger compression of inner generation or tension stress, thus affect speculum 142 with P type contact layer 141 so that the contact of the second semiconductor layer 13 and adhesion characteristics.
Below for gallium nitride based light emitting diode, the third embodiment of the present invention is described.
The light-emitting diode chip for backlight unit of Fig. 3 involved by third embodiment of the invention, both can be flip-chip, and also can be the intermediate products in vertical chip manufacturing process, namely not yet remove the stage of Sapphire Substrate.
Form Al over the substrate 10
xin
yga
1-x-yn (0≤x≤1,0≤y≤1) epitaxial loayer, comprise the first semiconductor layer 11, active layer 12 and the second semiconductor layer 13, described first semiconductor layer 11 is different with the conduction type of the second semiconductor layer 13; Expose the region 20 of the first semiconductor layer 12.Second semiconductor layer 13 forms p-type electrode layer 14, in region 20, forms the N-shaped metal electrode 15 contacted with n-layer 12, described N-shaped metal electrode 15 blanket p-type metal level 14; There is spacer medium layer 100 between p-type electrode layer 14 and N-shaped metal electrode, to prevent short circuit.
Described substrate 10 is nonconducting transparent substrates, as sapphire, substrate 10 can form micron or nano level figure, to increase light extraction efficiency in the side contacted with described epitaxial loayer.
Described Al
xin
yga
1-x-ythe resilient coating that AlN or GaN is formed can also be comprised in N epitaxial loayer, can also electronic barrier layer be comprised.
Described first semiconductor layer 11 and the second semiconductor layer 13 can be n-layer, also can be p-type layer, but the conduction type of the first semiconductor layer 11 and the second semiconductor layer 13 is contrary.
The method exposing the first semiconductor layer 11 can adopt dry etching to remove the second semiconductor layer 13 and active layer 12, as dry etching means such as ICP, RIE, also can adopt wet etching, utilizes and adopts chloroazotic acid or KOH solution.
Active layer 12 can be multi-quantum pit structure, also can be heterojunction.
Below with the first semiconductor layer 11 for n-layer, and the second semiconductor layer 13 to be p-type layer illustrate p, the distribution of n-electrode and composition.
Described p-type electrode layer 14 has higher reflectivity, structure and the first or second embodiment same or similar, adopt the metal system comprising the high-reflectivity metal of Al or Ag, also can comprise as high-transmission rate conductive films such as ITO, ZnO, in conjunction with metallic mirror or deielectric-coating speculum, such as DBR (distributed bragg reflector mirror).
Preferably, described N-shaped metal electrode 15 for comprising the metal system such as Cr/Al or Ti/Al or Cr/Pt/Au, wherein Cr and the Ti barrier layer of spreading as metal and adhesion layer.N-type metal electrode 15 can divide multistep to be formed, the n-layer first exposed in region 20 such as, form N-shaped Ohm contact electrode (not shown), then outside formation spacer medium layer 100, by wet method or dry etching mode exposing n-type Ohm contact electrode, then form N-shaped and add thick electrode, namely add thick electrode by N-shaped Ohm contact electrode and N-shaped and jointly form N-shaped metal electrode 15.N-shaped metal electrode 15 can be arranged on above p-type electrode layer 14, forms larger electrode zone at the chip surface of light-emitting diode, and being convenient to realize N-shaped metal electrode 15 has larger bonded area with supporting substrate, thus improves the reliability combined.
Described N-shaped metal electrode 15 blanket p-type electrode layer 14; There is spacer medium layer 100 between p-type electrode layer 14 and N-shaped metal electrode, to prevent short circuit.
Alternatively, described spacer medium layer 100 adopts polycrystalline or the monocrystal thin films with different carbon atom arrangement structure, such as, and diamond-film-like (diamond-like carbon is called for short DLC) or diamond film.The resistivity of described spacer medium layer 100 is 10
12Ω cm to 10
16between Ω cm, thickness exists
can select to adopt the mode ionization methanogenesis such as radio frequency PECVD, but be not limited thereto.
Also can adopt silica/silicon nitride composite membrane, or the single or multiple lift film of silicon oxide/silicon nitride/silicon oxide (ONO) is as spacer medium layer.
Described spacer medium layer 100 has the coated ability of good sidewall and compactness, meanwhile, reduces stress wherein, and this needs the gradient by controlling table top, and the parameters such as the deposition pressure of spacer medium layer 100, gas ratio and deposition power are optimized.
Alternatively, the shape in the region 20 of the exposing n-type layer of the light-emitting diode of described upside-down mounting or vertical stratification can be circular, and as shown in Figure 4, diameter is 20-100um, is preferably 50-80um; Also can strip, as shown in Figure 5; Also can be arbitrary polygon shape or elliptical shape, width at 3-60um, preferred 10-30um.
As shown in Figure 6, for upside-down mounting is to the light-emitting diode chip for backlight unit 50 on supporting substrate 200.
Described supporting substrate 200 can be the inorganic Heat Conduction Materials such as silicon, pottery, aluminium nitride, carborundum, also can be the substrate of the metal formation that the thermal conductivities such as Cu, Al are higher; When adopting non-conducting material as supporting substrate 200, the pad 201 and 202 corresponding with N-shaped metal electrode 15 and p-type electrode layer 14 directly can be formed thereon; When adopting conductor or semi-conducting material as supporting substrate 200, insulating barrier (not shown) can be formed between pad 201 and 202 and supporting substrate 200.
Alternatively, described supporting substrate 200 is encapsulating package.
Light-emitting diode chip for backlight unit 50 is electrically connected with the pad 201 and 202 on supporting substrate 200 by modes such as eutectic weldering, ultrasonic bonding, conductive adhesives.
As shown in Figure 7, for upside-down mounting is to the membrane structure light-emitting diode chip for backlight unit 60 on supporting substrate 200.After light-emitting diode chip for backlight unit 50 upside-down mounting is on supporting substrate 200, remove substrate 10.
Alternatively, after removal substrate 10, N-shaped first semiconductor layer 11 exposed can form N-shaped metal electrode 15, simultaneously, only form p-type electrode layer 14 in the second semiconductor layer 13 side, thus form light emitting diode with vertical structure (not shown).
The above; be only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in the technical scope disclosed by the present invention; the conversion that can expect easily or replacement, all should be encompassed in of the present invention comprising within scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (12)
1. a gallium nitride base light-emitting device, comprising:
One transparent substrates;
One first semiconductor layer, an active layer and one second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
One P type contact layer, being positioned at hole is the first semiconductor layer of majority carrier or the surface of the second semiconductor layer, and it is
metal conductive oxide film;
The speculum of one Ag or Al, is positioned in P type contact layer, and the speculum of described Ag or Al directly contacts with P type contact layer;
One P electrode pad, on the speculum of Ag or Al, is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer.
2. gallium nitride base light-emitting device as claimed in claim 1, wherein said metal conductive oxide film is ITO or doping ZnO.
3. gallium nitride base light-emitting device as claimed in claim 1, wherein adjusts thickness and the growth temperature of described speculum, diffusion impervious layer and weld layer, to reduce the stress in multilayer conductive film.
4. a gallium nitride LED chip, comprising:
One transparent substrates;
One first semiconductor layer, active layer and the second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
One P type contact layer, being positioned at hole is the first semiconductor layer of majority carrier or the surface of the second semiconductor layer, and it is
metal conductive oxide film;
The speculum of one Ag or Al, is positioned in P type contact layer, and the speculum of described Ag or Al directly contacts with P type contact layer;
One P electrode pad, on the speculum of Ag or Al, is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer;
One N-shaped metal electrode, is positioned on the first or second semiconductor layer that the electronics exposed is majority carrier;
Described N-shaped metal electrode part covers p-electrode pad, between the p-electrode pad that N-shaped metal electrode and part cover, form the spacer medium layer be made up of the polycrystalline of different carbon atom arrangement structure or monocrystalline.
5. gallium nitride LED chip as claimed in claim 5, the resistivity of wherein said spacer medium layer is 10
12Ω cm to 10
16between Ω cm.
6. gallium nitride LED chip as claimed in claim 4, wherein said metal conductive oxide film is ITO or doping ZnO.
7. a manufacture method for gallium nitride base light-emitting device, it comprises following steps:
One transparent substrates;
Form the first semiconductor layer on a transparent substrate, an active layer and one second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
Be that the first semiconductor layer of majority carrier or the surface of the second semiconductor layer form P type contact layer in hole, it is
metal conductive oxide film;
P type contact layer is formed the speculum of Ag or Al, and the speculum of described Ag or Al directly contacts with P type contact layer;
The speculum of Ag or Al is formed p-electrode pad, and described p-electrode pad is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer.
8. the manufacture method of gallium nitride base light-emitting device as claimed in claim 7, wherein said metal conductive oxide film is IT0 or doping of Zn 0.
9. the manufacture method of gallium nitride base light-emitting device as claimed in claim 7, wherein adjusts thickness and the growth temperature of described speculum, diffusion impervious layer and weld layer, to reduce the stress in multilayer conductive film.
10. a manufacture method for gallium nitride LED chip, it comprises the steps:
One transparent substrates;
Form the first semiconductor layer on a transparent substrate, active layer and the second semiconductor layer, described first semiconductor layer is contrary with the conduction type of the second semiconductor layer;
Be that the first semiconductor layer of majority carrier or the surface of the second semiconductor layer form P type contact layer in hole, it is
metal conductive oxide film;
P type contact layer is formed the speculum of Ag or Al, the speculum of described Ag or Al directly contacts with P type contact layer;
The speculum of Ag or Al is formed p-electrode pad, and described p-electrode pad is made up of multiple layer metal, and multiple layer metal comprises metal diffusion barrier layer and weld layer;
At the electronics exposed be majority carrier the first or second semiconductor layer on form n metal electrode;
Described N-shaped metal electrode part covers p-electrode pad, between the p-electrode pad that N-shaped metal electrode and part cover, form the spacer medium layer be made up of the polycrystalline of different carbon atom arrangement structure or monocrystalline.
The manufacture method of 11. gallium nitride LED chips as claimed in claim 10, the resistivity of wherein said spacer medium layer is between 1012 Ω cm to 1016 Ω cm.
The manufacture method of 12. gallium nitride LED chips as claimed in claim 10, wherein said metal conductive oxide film is ITO or doping ZnO.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129214A (en) * | 2016-07-15 | 2016-11-16 | 厦门乾照光电股份有限公司 | P electrode structure, LED chip structure and the manufacture method thereof of a kind of LED chip |
| CN113903842A (en) * | 2021-09-24 | 2022-01-07 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102037576A (en) * | 2008-05-20 | 2011-04-27 | 昭和电工株式会社 | Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp |
| CN102332521A (en) * | 2011-10-19 | 2012-01-25 | 中国科学院物理研究所 | GaN (gallium nitride)-based LED (light-emitting diode) with N-type electrodes in dotted distribution and manufacturing method thereof |
| CN103682004A (en) * | 2012-09-07 | 2014-03-26 | 晶能光电（江西）有限公司 | Light emitting diode flip chip for improving light-out rate and preparation method thereof |
| CN104409601A (en) * | 2014-11-05 | 2015-03-11 | 扬州中科半导体照明有限公司 | Flip light-emitting diode chip with double reflection layers |
-
2015
- 2015-01-13 CN CN201510017329.3A patent/CN104617202A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102037576A (en) * | 2008-05-20 | 2011-04-27 | 昭和电工株式会社 | Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp |
| CN102332521A (en) * | 2011-10-19 | 2012-01-25 | 中国科学院物理研究所 | GaN (gallium nitride)-based LED (light-emitting diode) with N-type electrodes in dotted distribution and manufacturing method thereof |
| CN103682004A (en) * | 2012-09-07 | 2014-03-26 | 晶能光电（江西）有限公司 | Light emitting diode flip chip for improving light-out rate and preparation method thereof |
| CN104409601A (en) * | 2014-11-05 | 2015-03-11 | 扬州中科半导体照明有限公司 | Flip light-emitting diode chip with double reflection layers |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129214A (en) * | 2016-07-15 | 2016-11-16 | 厦门乾照光电股份有限公司 | P electrode structure, LED chip structure and the manufacture method thereof of a kind of LED chip |
| CN106129214B (en) * | 2016-07-15 | 2018-08-14 | 厦门乾照光电股份有限公司 | A kind of P electrode structure, LED chip structure and its manufacturing method of LED chip |
| CN113903842A (en) * | 2021-09-24 | 2022-01-07 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
| CN113903842B (en) * | 2021-09-24 | 2022-12-20 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
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Application publication date: 20150513 |