CN104617067A - 半导体器件及其裸片接合结构 - Google Patents

半导体器件及其裸片接合结构 Download PDF

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Publication number
CN104617067A
CN104617067A CN201410613709.9A CN201410613709A CN104617067A CN 104617067 A CN104617067 A CN 104617067A CN 201410613709 A CN201410613709 A CN 201410613709A CN 104617067 A CN104617067 A CN 104617067A
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China
Prior art keywords
metal layer
scope
semiconductor device
nude film
layer
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CN201410613709.9A
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Inventor
黄圭孝
李锺洪
崔甲秀
田且秀
朴进相
裵相甫
朴用鈱
安星桭
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KEC Corp
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KEC Corp
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Abstract

提供了一种半导体器件及其接合结构，其中不与半导体裸片或引线框架形成金属间化合物，从而改善电特性和机械特性以及可润湿性，且抑制裸片接合材料的聚集。所述半导体器件包括：半导体裸片、形成在半导体裸片的表面上的阻挡层、形成在阻挡层上的第一金属层、形成在第一金属层上的中间金属层，以及形成在中间金属层上的第二金属层。这里，第一金属层和第二金属层具有第一熔化温度，中间金属层具有低于第一熔化温度的第二熔化温度。

Description

半导体器件及其裸片接合结构
相关申请的交叉引用
本申请参考且要求2013年11月5日提交的申请号为10-2013-0133760的韩国专利申请的优先权，其全部内容通过引用合并于此。
技术领域
本公开的某些实施例涉及半导体器件及其接合结构。
背景技术
通常，半导体器件的已知裸片接合材料包括Au-Ge0.15-Sb0.17、Sn-90Pb、Sn-37Pb、Sn-3.5Ag、Sn-5Sb、Sn-0.7Cu和Sn-9Zn。裸片接合材料用于将半导体裸片电连接以及机械连接至基板，诸如电路板。
然而，由于环境法规，禁止使用铅(Pb)或锑(Sb)，而金(Au)可能增加半导体器件的制造成本。
另外，锡银(SnAg)合金可能与半导体裸片上形成的镍(Ni)或与引线框架的铜(Cu)形成金属间化合物，从而降低电特性和机械特性。此外，当沉积银(Ag)时，锡(Sn)可能由于热量累积而聚集，使得在裸片接合材料中产生许多空隙。另外，裸片接合材料的表面粗糙度可能增大，由此降低了引线框架的润湿特性和接合特性的可靠性。
通过将这样的系统与参照附图在本申请的其余部分列出的本公开相比较，现有的且传统的方法的另外局限性和缺点将对于本领域技术人员变得明显。
相关技术
韩国专利申请第10-2012-0117551号(在2012年10月22日提交)
发明内容
本发明的实施例提供一种半导体器件及其接合结构，其中不与半导体裸片或引线框架形成金属间化合物，从而改善电特性和机械特性以及可润湿性，且抑制裸片接合材料的聚集。
根据本发明的实施例，提供一种半导体器件，包括：半导体裸片、形成在半导体裸片的表面上的阻挡层、形成在阻挡层上的第一金属层、形成在第一金属层上的中间金属层、以及形成在中间金属层上的第二金属层，其中第一金属层和第二金属层具有第一熔化温度，中间金属层具有低于第一熔化温度的第二熔化温度。
第一熔化温度可以在400至1500℃的范围，第二熔化温度可以在100至500℃的范围。
中间金属层可以包括锡(Sn)、铋(Bi)或铟(In)，第一金属层和第二金属层中的每个可以包括银(Ag)、金(Au)、镍(Ni)、锗(Ge)、锑(Sb)、钴(Co)、铜(Cu)、铝(Al)、硅(Si)、锌(Zn)或镁(Mg)。
中间金属层与第一金属层和第二金属层之间的重量比可以在9.5:0.5至6:4的范围。
中间金属层、第一金属层和第二金属层的厚度可以范围以降序排列，即，中间金属层>第一金属层>第二金属层。
中间金属层可以具有范围在至的厚度，第一金属层具有范围在至的厚度，第二金属层可以具有范围在至的厚度。
中间金属层可以具有范围在至的厚度，第一金属层可以具有范围在至的厚度，第二金属层可以具有范围在至的厚度。
阻挡层可以由钛(Ti)或顺序形成的钛(Ti)和镍(Ni)制成，阻挡层可以由钒(V)或顺序形成的钒(V)和镍(Ni)制成。
根据本发明的实施例，提供一种裸片接合结构，其包括半导体裸片、电连接至半导体裸片的引线框架、以及电连接至半导体裸片和引线框架的锡银(SnAg)合金，其中，锡银合金的裸片接合温度处于220℃至450℃的范围，锡银合金的再熔化温度处于280℃至500℃的范围。
这里，锡银合金的锡(Sn)和银(Ag)之间的重量比可以在9.5:0.5至6:4的范围。
如上所述，根据本发明的实施例，提供一种半导体器件及其接合结构，其可以通过利用银-锡-银(Ag-Sn-Ag)结构作为背侧金属材料以作为半导体器件的裸片接合材料来改善电特性和机械特性以及可润湿性且抑制裸片接合材料的聚集，以防止在接合材料与半导体裸片的金属层或引线框架之间形成金属间化合物。
具体地，在本发明的实施例中，在裸片接合期间，银-锡-银(Ag-Sn-Ag)结构中的中部的锡(Sn)首先熔化以起到溶剂的作用，然后上部的银(Ag)和下部的银(Ag)(起到溶质的作用)熔化，从而允许在锡(Sn)的熔点附近的低温(例如，250℃)执行裸片接合。
在根据本发明的实施例的半导体器件及其裸片接合结构中，当银-锡-银(Ag-Sn-Ag)经历裸片接合以变成锡银(SnAg)合金时，最终的熔点根据所设计的锡银(SnAg)的重量比而增加，从而降低了裸片接合温度且增加了再熔化温度。
从以下说明书和附图中将可以更充分地理解本公开的各种优点、方面和新颖特征以及所示实施例的细节。
附图说明
图1A是说明根据本发明的实施例的半导体器件的截面图，图1B是说明在半导体裸片和引线框架未经历裸片接合工艺之前的状态的截面图；
图2说明根据本发明的实施例的利用半导体器件的裸片接合机制；
图3是说明在本发明中使用的锡银(SnAg)的相变状态的状态图；
图4示出了用于解释根据本发明的实施例的取决于第一金属层的厚度变化的效果的照片；
图5示出了用于解释根据本发明的实施例的取决于第二金属层的厚度变化的效果的照片；
图6是示出根据本发明的实施例的取决于第一金属层的厚度变化的裸片剪切强度(die shear strength)的曲线；
图7是示出根据本发明的实施例的取决于第二金属层的厚度变化的裸片剪切强度的曲线；
图8是示出根据本发明的实施例的取决于裸片接合(D/B)温度的裸片剪切强度的曲线；以及
图9是示出根据本发明的实施例的取决于裸片接合(D/B)温度的饱和电压的曲线。
具体实施方式
在下文中，将参照附图详细描述本发明的实施例。
本公开的各个方面可以实现为许多不同形式，不应当被解释为局限于本文所列的示例实施例。更确切地，提供本公开的这些示例实施例将使得本公开全面和完整，且将向本领域技术人员传达本公开的各个方面。
在附图中，为了清楚，层和区域的厚度被夸大。这里，相同附图标记在本文中表示相同元件。如在本文使用的，术语“和/或”包括相关所列项目中的一个或更多个的任意组合和所有组合。
另外，本文使用的术语仅出于描述特定实施例的目的，而不旨在限制本公开。如在本文使用的，单数形式旨在包括复数形式，除非上下文明确另有说明。还将理解的是，术语“包括”和/或“包括有”当在本说明书使用时，明确说明所陈述的特征、数量、步骤、操作、元件和/或部件的存在，但并不排除一个或更多个其他特征、数量、步骤、操作、元件、部件和/或其集合的存在或增加。
将理解的是，尽管术语第一、第二等可以在本文用于描述各种构件、元件、区域、层和/或部分，但这些构件、元件、区域、层和/或部分不应当受限于这些术语。这些术语仅用于区分一个构件、元件、区域、层和/或部分与另一个构件、元件、区域、层和/或部分。因而，例如，在不脱离本公开的教义的情况下，下面讨论的第一构件、第一元件、第一区域、第一层和/或第一部分可以被称为第二构件、第二元件、第二区域、第二层和/或第二部分。
图1A是说明根据本发明的实施例的半导体器件的截面图，图1B是说明在半导体裸片和引线框架未经历裸片接合工艺之前的状态的截面图。
如在图1A和图1B中所示，根据本发明的半导体器件100包括半导体裸片110、阻挡层121和122、第一金属层131、中间金属层140和第二金属层132。
半导体裸片110通常可以是选自金属氧化物硅场效应晶体管(MOSFET)、绝缘栅双极型晶体管(IGBT)、二极管、瞬态电压抑制器(TVS)及其等价物中的至少一种，但本发明不将半导体裸片110的种类局限于这里所列举的。
阻挡层121和122可以包括钛(Ti)或顺序形成的钛(Ti)和镍(Ni)。另外，阻挡层121和122可以包括钒(V)或顺序形成的钒(V)和镍(Ni)。
这里，钛(Ti)或钒(V)可以被限定作为第一阻挡层121，镍(Ni)可以被限定作为第二阻挡层122。第一阻挡层121可以防止稍后将描述的第一金属层131和第二金属层132或中间金属层140扩散至半导体裸片110，第二阻挡层122可以防止第一金属层131和第二金属层132或中间金属层140扩散至第一阻挡层121。在所示的实施例中，第一阻挡层121和第二阻挡层122包括钛(Ti)或钒(V)和镍(Ni)，但本发明不将第一阻挡层121和第二阻挡层122的材料局限于这里所列出的。
第一金属层131形成在第二阻挡层122上。在示例性实施例中，第一金属层131可以包括具有在约400℃至约1500℃范围的第一熔化温度的银(Ag)、金(Au)、镍(Ni)、锗(Ge)、锑(Sb)、钴(Co)、铜(Cu)、铝(Al)、硅(Si)、锌(Zn)、镁(Mg)或其等价物。第一金属层131可以防止中间金属层140和第二阻挡层122形成金属间化合物。在示例性实施例中，由于银(Ag)和镍(Ni)形成共晶合金，所以不形成金属间化合物。因此，由于不从中间金属层140和第二阻挡层122形成脆性的金属间化合物(例如Ni3Sn4或Ni2Sn2)，所以改善了电特性和机械特性。另外，由于中间金属层140借助于第一金属层131而不扩散至第一阻挡层121，所以第一金属层131和中间金属层140的层叠结构变得更稳定。另外，由于第一金属层131比中间金属层140具有更低的表面能，所以还可以抑制中间金属层140的聚集。
这里，第一金属层131可以具有约至约范围的厚度，优选地具有约至约范围的厚度，并且更优选地具有约至约范围的厚度。
中间金属层140形成在第一金属层131上。在示例性实施例中，中间金属层140可以包括具有在约100℃至约500℃范围的第二熔化温度的锡(Sn)、铋(Bi)、铟(In)或其等同物。中间金属层140是用于将半导体裸片110电连接至引线框架150的裸片接合材料的主要成分，且用于降低裸片接合材料的接合温度。在示例性实施例中，裸片接合材料的接合温度借助于中间金属层140降至约220℃至约450℃，优选地降至约280℃至约500℃。此外，裸片接合之后的再熔化温度(remelting temperature)增加至约280℃至约500℃，优选地增加至约400℃至约500℃，使得根据本发明的裸片接合材料不会在另一制造工艺(例如，线接合(200℃至300℃)或封装(200℃至300℃))期间或另一电子部件的安装期间再熔化。
这里，中间金属层140可以形成为具有约至约范围的厚度，优选地具有约至约范围的厚度，并且更优选地具有约至约范围的厚度。
第二金属层132形成在中间金属层140上。在示例性实施例中，第二金属层132可以包括具有在约400℃至约1500℃范围的第一熔化温度的银(Ag)、金(Au)、镍(Ni)、锗(Ge)、锑(Sb)、钴(Co)、铜(Cu)、铝(Al)、硅(Si)、锌(Zn)、镁(Mg)或它们的组合。第二金属层132防止作为非金属的中间金属层140被氧化。
另外，第二金属层132防止在中间金属层140和引线框架150之间形成金属间化合物。在示例性实施例中，由于银(Ag)和铜(Cu)形成共晶合金，所以不形成金属间化合物。因此，不从中间金属层140和引线框架150形成脆性的金属间化合物(例如，Cu6Sn5)，从而改善了电特性和机械特性。此外，引线框架150的可润湿性通过第二金属层132得到改善，从而进一步改善了电特性和机械特性。
这里，第二金属层132可以形成为具有约至约范围的厚度，优选地具有约至约范围的厚度，且更优选地具有约至约范围的厚度。
图1B说明了要被连接至半导体裸片110的引线框架150，但本发明的方面不限于此。在示例性实施例中，取代引线框架150，可以使用硬性印刷电路板或柔性印刷电路板。另外，在所附权利要求中限定的引线框架的概念包括硬性印刷电路板或柔性印刷电路板。
图2说明了根据本发明的实施例的利用半导体器件的裸片接合机制。
如在图2中所示，由第一金属层131、中间金属层140和第二金属层132组成的裸片接合材料层(即，夹层的背侧金属层)在裸片接合期间相对于彼此熔化，从而形成例如锡银(SnAg)合金。这里，如上述，裸片接合(D/B)温度可以在约220℃至约450℃的范围，优选地在约220℃至约400℃的范围。锡银(SnAg)合金还可以被称作银锡(AgSn)合金。
现在将按顺序描述裸片接合工艺。在步骤①中，将包括以夹层构造来布置的第一金属层131、中间金属层140和第二金属层132的裸片接合材料层(即，背侧金属层)提供至半导体裸片110的背侧，并且将背侧金属层置于引线框架150上。接下来，在步骤②中，如果提供约220℃至约450℃范围的D/B温度，则中间金属层140首先熔化，然后变成液相。在此阶段，第一金属层131和第二金属层132仍处于固相。接下来，在步骤③中，如果D/B温度保持预定时间，则处于固相的第一金属层131和第二金属层132熔化，然后溶解在处于液相的中间金属层140中，从而形成锡银(SnAg)合金层，这类似于盐溶解于水以变成盐水的原理。最后，在步骤④中，如果D/B温度进一步保持预定时间，则处于固相的第一金属层131和第二金属层132完全溶解在液相的中间金属层140中，从而形成用于将半导体裸片110电连接至引线框架150的锡银(SnAg)合金层。另外，取消D/B温度以执行冷却工艺，从而获得固相的锡银(SnAg)合金层。
即，在执行裸片接合工艺之前，裸片接合材料层以银-锡-银夹层构造存在。然而，在执行裸片接合工艺之后，裸片接合材料层作为锡银(SnAg)合金层存在。
同时，一旦形成锡银(SnAg)合金层，为了使形成的锡银(SnAg)合金层再熔化，必须提供在约280℃至约500℃范围的温度，并且优选地提供在约400℃至约500℃范围的温度，其高于D/B温度。因此，如果根据本发明的半导体器件100被裸片接合至引线框架150，则锡银(SnAg)合金层不会在随后的线接合或封装工艺或另一电子部件的回流工艺中再熔化。
更详细地，当从银-锡-银(Ag-Sn-Ag)结构获得锡银(SnAg)合金时，锡银(SnAg)合金的再熔化温度根据锡银(SnAg)合金的重量比来确定。在一个示例性实施例中，Sn95Ag5的再熔化温度被确定为约230℃。在另一个示例性实施例中，Sn90Ag10的再熔化温度被确定为约300℃。在图3中示出了根据重量比的再熔化温度。
如上述，本发明提供相对低的D/B温度，由此抑制故障，诸如由于半导体裸片和引线框架之间的热膨胀系数的差异导致半导体裸片和引线框架彼此分开的爆开现象(poping phenomena)/抬升现象(lifting phenomena)。另外，当在相对低的温度执行接合时，根据锡银(SnAg)合金层的组成配比来控制再熔化以在相对高的温度被执行，使得本发明的裸片接合结构不受另一制造工艺或另一电子部件的安装的影响。
图3是说明在本发明中使用的锡银(SnAg)的相变状态的状态图。
在图3中，X轴表示锡(Sn)相对于银(Ag)的重量比(wt％)，Y轴表示温度。如在图3中所示，纯锡(Sn)具有约231℃的熔点，纯银(Ag)具有约961℃的熔点。
同时，根据本发明的半导体器件100包括以夹层构造来布置的第一金属层131、中间金属层140和第二金属层132。然而，一旦执行对引线框架150的裸片接合，则半导体器件100包括锡银(SnAg)合金层。锡银(SnAg)合金层可以被控制成具有约9.5:0.5至约6:4范围的重量比，优选地具有约9:1至约7:3范围的重量比。因此，锡银(SnAg)合金层的D/B温度可以被控制在约220℃至约450℃的范围，优选地被控制在约220℃至约400℃的范围。另外，如上述，在通过接合形成锡银(SnAg)合金层之后，其可以具有约280℃至约500℃范围的再熔化温度，优选地具有约400℃至约500℃范围的再熔化温度。
实例
图4示出了用于解释根据本发明的实施例的取决于第一金属层的厚度变化的效果的照片。
在图4中，(a)和(b)示出了在形成具有约的厚度的第一金属层131(例如，银)之后、然后形成中间金属层140(例如，锡)的3D照片和截面照片。如在图4的(a)和(b)中所示，第一金属层131具有相对小的厚度，使得第二阻挡层122(例如，镍)未被完全覆盖。因此，当中间金属层140与第二阻挡层122直接反应时，可以观察到聚集。即，由于第一金属层131不能充分地减少中间金属层140的表面能，所以从接合材料的表面观察到裸片接合材料的聚集。
在图4中，(c)和(d)示出了形成具有约的厚度的第一金属层131(例如，银)之后、然后形成中间金属层140(例如，锡)的3D照片和截面照片。如在图4的(c)和(d)中，第一金属层131具有相对大的厚度，使得第二阻挡层122(例如，镍)被完全覆盖。因此，由于第一金属层131充分减少中间金属层140的表面能，裸片接合材料的表面可以变得大体平坦。
图5示出了用于解释根据本发明的实施例的取决于第二金属层的厚度变化的效果的照片。
在图5中，(a)和(b)示出了形成第一金属层131(例如，银)和中间金属层140(例如，锡)之后的3D照片和截面照片。如在图4的(a)和(b)中所示，然后形成具有约的厚度的第二金属层132(例如，银)。如在图5的(a)和(b)中所示，裸片接合材料的表面可以变得大体平坦。
在图5中，(c)和(d)示出了形成第一金属层131(例如，银)和中间金属层140(例如，锡)之后、然后形成具有约的厚度的第二金属层132(例如，银)的3D照片和截面照片。如在图5的(c)和(d)中所示，当第二金属层132的沉积厚度增加时，来源于电子束的热能可能积聚，可以从接合材料的表面观察到裸片接合材料的聚集。
如从该实验性的实例所证实的，在第一金属层131(银)、中间金属层140(锡)和第二金属层132(银)的层叠结构(夹层构造)中，第二金属层132抑制锡铜(Sn-Cu)形成金属间化合物、防止中间金属层140被氧化、以及减少表面粗糙度，从而改善半导体器件100的电特性和机械特性。
如果第一金属层131(银)的厚度过小，则第一金属层131不能用作阻挡部。因此，由于中间金属层140聚集，所以第一金属层131应当具有足够大的厚度。另外，随着第二金属层132(银)的沉积厚度增加，中间金属层140被供应热能的时间延长，这引起积聚。因而，随着第二金属层132的厚度减小，第二金属层132可以具有平坦的表面。
这里，随着在沉积工艺期间降低腔室温度，中间金属层140的表面能降低，使得中间金属层140的表面变得更平坦。
综上所述，为了获得裸片接合材料的平坦表面，第一金属层131被形成为具有足够大的厚度，并且第二金属层132被形成为具有足够小的厚度。另外，在第一金属层131和第二金属层132以及中间金属层140的沉积期间，腔室应当保持在低温。
这里，确定的是，表面的形状越平，在裸片接合期间的温度分布就越好。另外，确定的是，在中间金属层140(锡)的熔点(例如，约250℃)处将根据本发明的夹层的背侧金属层结构进行裸片接合。此外，还确定的是，再熔化实际上在锡银(SnAg)合金的熔点(例如，约350℃)出现。
图6是示出了根据本发明的实施例的取决于第一金属层的厚度变化的裸片剪切强度的曲线。
这里，执行裸片剪切强度测试(DST)，使得利用裸片接合材料将半导体裸片110连接至引线框架150、然后利用剪切刀片来推动半导体裸片110的一侧。即，裸片剪切强度是当半导体裸片110与引线框架150分开时施加的力的值。DST方法对于本领域技术人员来说是广泛公知的，将不给出其详细描述。
在图6中，X轴表示第一金属层131(银)的厚度，Y轴表示裸片剪切强度。这里，第二金属层132(银)具有和2的厚度。
如在图6中所示，当第一金属层131具有1000至范围的厚度时，其相对于测试规格水平(即，45gf)具有高裸片剪切强度，即大于或等于100gf。具体地，当第一金属层131的厚度在约至约的范围时展示了DST稳定区域，从而获得就产量而言的足够高质量裸片接合裕度。在图6中，Rt’n产品表示现有产品。
图7是示出了根据本发明的实施例的取决于第二金属层的厚度变化的裸片剪切强度的曲线。
在图7中，X轴表示第二金属层132(银)的厚度，Y轴表示裸片剪切强度。这里，第一金属层131(银)具有和的厚度。
如在图7中所示，当第二金属层132具有1000至范围的厚度时，其具有相对于测试规格水平(SPEC)(即，45gf)的高裸片剪切强度，即，大于或等于100gf。具体地，当第二金属层132的厚度在约至约的范围时展示了DST稳定区域，从而获得就产量而言的足够高质量裸片接合裕度。
图8是示出了根据本发明的实施例的取决于裸片接合(D/B)温度的裸片剪切强度的曲线。
在图8中，X轴表示裸片接合(D/B)温度，Y轴表示裸片剪切强度。这里，裸片剪切强度可以被定义为最大值(Max)、中间值(Center)以及最小值(Min)。
如在图8中所示，在D/B温度中的约270℃至约400℃的整个范围上，裸片剪切强度相对于测试规格水平(SPEC)(即，45gf)良好，即大于或等于150gf。具体地，当D/B温度处于约270℃至约400℃的范围中时展示了DST稳定区域，从而获得就产量而言的足够高质量裸片接合裕度。
在裸片接合材料结构中，即，背侧金属层结构(B/M)中，约的钛(Ti)用作第一阻挡层121，约的镍(Ni)用作第二阻挡层122，约的银(第一Ag)用作第一金属层131，约的锡(Sn)用作中间金属层140，约的银(第二Ag)用作第二金属层132。
图9是示出根据本发明的实施例的取决于裸片接合(D/B)温度的饱和电压的曲线。
在图9中，X轴表示D/B温度，Y轴表示在集电极和发射极之间施加的饱和电压。
如在图9中所示，在D/B温度中的约270℃至约400℃的整个范围上，饱和电压相对于测试规格水平(SPEC)(即，130mV)良好，即，小于或等于110mV。另外，在上述D/B温度范围中包括所有的饱和电压，从而获得就产量而言的足够高质量裸片接合裕度。
表1示出了根据本发明的实施例的对产品执行的电测试的结果。
表1
测试条件 SPEC 现有产品 本发明产品
VCBO IC＝100uA 最小值60V 122.7V 125.8V
VCEO IC＝1mA 最小值50V 71.5V 72.8V
VEBO IE＝100uA 最小值5V 7.97V 8.09V
hFE VCE＝6V,IC＝2mA 120～240 155.0 150.6
VCE(sat)(V) IC＝100mA,IB＝10mA 最小值0.25V 96.2mV 102.1mV
如在表1中所列出的，本发明产品大致展示了与现有产品大体相同的DC特性，且满足测试规格水平的所有项目。具体地，本发明产品的ICMAX与现有产品相同，这满足测试规格水平。另外，本发明产品的VCE(sat)与现有产品相同，这满足测试规格水平。因此，由于本发明产品满足测试规格水平的所有电特性，所以能够充分地实现本发明产品的商用化。
表2示出了根据本发明的实施例的产品的可靠性测试的结果。
表2
如在表2中所列的，当评估可靠性时，确定的是，现有产品和本发明产品之间在可靠性方面无差异。在示例性实施例中，当对不耐热的锡(Sn)执行温度循环测试时，得到锡(Sn)的物理特性中的稳定性。另外，当对脆性的锡(Sn)执行热疲劳测试时，得到相对于热疲劳的机械强度和稳定性。因此，由于本发明产品满足测试规格水平的全部机械特性，可以充分实现本发明产品的商用化。
这里，SSOL表示稳态操作寿命测试，H3TRB表示高湿度高温度反向偏置测试，SSOL和H3TRB对于本领域技术人员来说是广泛公知的，从而将不给出其重复描述。另外，SHT表示焊料热试验，TCT表示温度循环测试，TFT表示热疲劳测试，SHT、TCT和TFT对于本领域技术人员来说是广泛公知的，从而将不给出其重复描述。
尽管以上已详细描述了根据本发明的特定实施例的半导体器件及其接合结构，但应该清楚地理解的是，对于本领域技术人员明显的关于本文教导的基本发明构思的许多变型和/或修改仍落入所附权利要求中限定的本发明的精神和范围内。

Claims (10)

1.一种半导体器件，包括：
半导体裸片；
阻挡层，形成在所述半导体裸片的表面上；
第一金属层，形成在所述阻挡层上；
中间金属层，形成在所述第一金属层上；以及
第二金属层，形成在所述中间金属层上，
其中，所述第一金属层和所述第二金属层具有第一熔化温度，所述中间金属层具有低于所述第一熔化温度的第二熔化温度。
2.如权利要求1所述的半导体器件，其中，所述第一熔化温度在400至1500℃的范围，所述第二熔化温度在100至500℃的范围。
3.如权利要求1所述的半导体器件，其中，所述中间金属层包括锡(Sn)、铋(Bi)或铟(In)，所述第一金属层和所述第二金属层中的每个包括银(Ag)、金(Au)、镍(Ni)、锗(Ge)、锑(Sb)、钴(Co)、铜(Cu)、铝(Al)、硅(Si)、锌(Zn)或镁(Mg)。
4.如权利要求1所述的半导体器件，其中，所述中间金属层与所述第一金属层和所述第二金属层之间的重量比在9.5:0.5至6:4的范围。
5.如权利要求1所述的半导体器件，其中，所述中间金属层、所述第一金属层和所述第二金属层的厚度以降序排列：中间金属层>第一金属层>第二金属层。
6.如权利要求1所述的半导体器件，其中，所述中间金属层具有范围在至的厚度，所述第一金属层具有范围在至的厚度，所述第二金属层具有范围在至的厚度。
7.如权利要求1所述的半导体器件，其中，所述中间金属层具有范围在至的厚度，所述第一金属层具有范围在至的厚度，所述第二金属层具有范围在至的厚度。
8.如权利要求1所述的半导体器件，其中，所述阻挡层由钛(Ti)或顺序形成的钛(Ti)和镍(Ni)制成，所述阻挡层由钒(V)或顺序形成的钒(V)和镍(Ni)制成。
9.一种裸片接合结构，包括：
半导体裸片；
引线框架，其电连接至所述半导体裸片；以及
锡银(SnAg)合金，其电连接至所述半导体裸片和所述引线框架，
其中，所述锡银合金的裸片接合温度处于220℃至450℃的范围，并且所述锡银合金的再熔化温度处于280℃至500℃的范围。
10.如权利要求9所述的裸片接合结构，其中，所述锡银合金的锡(Sn)和银(Ag)之间的重量比处于9.5:0.5至6:4的范围。
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