CN104611672A - Focusing electron-beam evaporation source and evaporation coating apparatus - Google Patents
Focusing electron-beam evaporation source and evaporation coating apparatus Download PDFInfo
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- CN104611672A CN104611672A CN201410698963.3A CN201410698963A CN104611672A CN 104611672 A CN104611672 A CN 104611672A CN 201410698963 A CN201410698963 A CN 201410698963A CN 104611672 A CN104611672 A CN 104611672A
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- electron
- electron beam
- evaporation
- evaporation source
- evaporating materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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Abstract
The invention discloses a focusing electron-beam evaporation source and an evaporation coating apparatus. The evaporation source comprises an electron-beam generating device used for generating large-beam parallel electron beams, an electron-beam transmission device used for gathering accelerated large-beam parallel electron beams to form a converged beam and transmitting the converged beam to an electron-beam minimum beam spot position, an evaporation-material conveying device used for receiving a detection signal of an electron-beam detection device and conveying a filiform evaporation material to the electron-beam minimum beam spot position, and at least one electron-beam detection device used for detecting divergent beams passing through the electron-beam minimum beam spot position. The evaporation source is capable of adjusting the power of the electron-beam generating device according to different evaporation speeds, and further changing the power density of electron beams. The evaporation coating apparatus is capable of guaranteeing high growth speed and good uniformity of a membrane.
Description
Technical field
The present invention relates to film coating apparatus and belong to field of film preparation, particularly a kind of focused beam evaporation source and evaporation coating device.
Background technology
Vacuum vapor plating makes the most general method of film, is that the vacuum chamber that substrate is housed is evacuated, makes gas pressure intensity reach below 0.01Pa, then add hot dip material, make its atom or molecule from surface gasification effusion, form steam stream, incide substrate surface, condensation forms solid film.
In order to make vapour pressure reach 1Pa magnitude, need heating materials to be evaporated to the temperature slightly higher than fusing point.In order to heat, need to utilize heater strip, evaporation boat, crucible etc., it be placed plating material.Once the material of these crucibles and so on reacts with plating material, define alloy, just again can not use, must change.In addition, if established alloy and crucible material are evaporated, the purity of film can also be reduced.
General evaporation low melting material adopts reactive evaporation, and evaporation materials with high melting point, particularly when purity requirement is very high, then selects the electronic beam method that energy density is high; When vaporator rate is large, high-frequency method can be used.
Thermal resistance evaporation source is applicable to fusing point usually lower than the plating material of 1500 DEG C.Electric power needed for the heating member such as filament and evaporation boat is generally (150-500) A × 10V, is low-voltage and high-current power supply mode.By the joule heating of electric current, plating material is melted, evaporation or distillation, filament shape and mode comprise thread, helical, taper is basket, tabular, direct-heating type block and indirect heating type.
In order to evaporate high purity metal in a large number, normal employing high-frequency induction heating evaporation source.The crucible that evaporating materials is housed is placed on the central authorities of frequency spiral coil, makes evaporating materials produce powerful eddy losses and hysteresis loss under the induction of higher frequency electromagnetic field, thus by the evaporation of plating material METAL HEATING PROCESS.
Electron beam evaporation can overcome many shortcomings of general resistance heating evaporation, is applicable to making high-melting-point thin-film material and high purity films material.Its principle be thermoelectron by after filament emission, accelerated anode accelerates, and obtains kinetic energy and bombards and be on the evaporating materials of anode, make evaporating materials heating and gasifying, and realize evaporation coating.Advantage comprises, and the beam current density of beam bombardment thermal source is high, can obtain more than the larger energy density in resistive heating source, can reach 104-109W/cm on a not too little area
2power density, be materials with high melting point evaporation, and higher vaporator rate can be had; Plating material is placed in cold-crucible, avoids the evaporation of container material, and the reaction between container material and plating material; Heat directly can be added to the surface of evaporating materials, and thus thermo-efficiency is high, thermal conduction and thermal-radiating loss little.
Electron beam evaporation source is different according to the track of electron beam, can be divided into annular rifle, straight rifle, e type rifle and hollow cathode electron beam gun etc.Straight rifle is the electric rifle of a kind of axisymmetric linear accelerating, electrically launches from cathode filament, is focused into pencil, bombards and plating material is melted and evaporation in crucible after anode accelerates.Its main drawback is that volume is large, and cost is high, and deposition material can pollute lance body structure and there is the Na of filament effusion
+.The e type rifle i.e. electron beam gun of 270 ° of deflections, which overcome the shortcoming of straight rifle, thermoelectricity gas, by after filament emission, is accelerated by anode, under crossed electric and magnetic field effect, deflect 270 ° by the effect of lorentz's force.
The grammar of existing electron beam evaporation source is that the evaporating materials in beam bombardment crucible makes it melt and evaporates, and to a certain degree there is the pollution of crucible material, and evaporating materials utilizes not exclusively, the problems such as the finite energy of bombardment.Therefore, be necessary to provide a kind of new electron beam evaporation source, avoid container material to pollute completely, utilize evaporating materials to greatest extent, promote the bombarding energy of electron beam.
Summary of the invention
Technical problem to be solved by this invention is, for above-mentioned the deficiencies in the prior art, provides a kind of focused beam evaporation source and evaporation coating device.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of focused beam evaporation source, comprising:
Electron beam generating device: for generation of large line parallel electron beam;
Electron beam transmission device: assemble for converging bundle after accelerating for making described large line parallel electron beam, and be transferred to the most tuftlet spot position of electron beam;
Evaporating materials e Foerderanlage: for thread evaporating materials being transported to the most tuftlet spot position of described electron beam after the detection signal receiving Electron-beam measuring device;
At least one Electron-beam measuring device: for detecting the angular-spread beam after the most tuftlet spot position of electron beam.
The vertical section diameter of described thread evaporating materials mates with the described minimum beam spot diameter, restrainted that converges.
Described electron beam generating device can be the rifle that goes in ring, straight rifle, e type rifle, hollow cathode rifle, or other can produce the electron beam gun of the large line of described large beam spot.
Present invention also offers a kind of focused beam evaporation coating device, comprise vacuum cavity; Substrate to be coated is placed in described vacuum cavity; Described vacuum cavity is communicated with air-bleed system; Above-mentioned focused beam evaporation source is provided with in vacuum cavity below described substrate to be coated.
Compared with prior art, the beneficial effect that the present invention has is: focused beam evaporation source of the present invention and focused beam evaporation coating device thoroughly can stop the pollution of container material; Improve the utilization ratio of evaporating materials; Significantly can improve the energy of electron beam, and then promote vaporator rate; The vaporator rate of evaporating materials is easy to control; Evaporation coating device can ensure that film growth rate is high, good uniformity.
Accompanying drawing explanation
Fig. 1 is the block diagram of focused beam evaporation source electron beam transmission of the present invention;
Fig. 2 is evaporating materials transport conveyor constructions schematic diagram of the present invention;
Fig. 3 is focused beam evaporation coating device structural representation of the present invention.
Embodiment
As the block diagram that Fig. 1 is focused beam evaporation source electron beam transmission of the present invention, wherein electron beam generating device 10 can produce the large line parallel electron beam 11 of the good large beam spot of parallelism.Large line parallel electron beam 11 is formed through electron beam transmission device and converges bundle 12, converges as most tuftlet spot in the most tuftlet spot position 13 of electron beam.Thread evaporating materials 17 delivers to the most tuftlet spot position 13 of electron beam, by the electron beam heating evaporation of high-energy-density through evaporating materials e Foerderanlage 16.After evaporating materials evaporation, electron beam will continue transmission through the most tuftlet spot position 13 of electron beam, become angular-spread beam 14 afterwards.One or more Electron-beam measuring device 15 can be had.Angular-spread beam 14 is transferred to Electron-beam measuring device 15 and is namely detected, evaporating materials e Foerderanlage starts after receiving the signal of Electron-beam measuring device to carry evaporating materials to the most tuftlet spot position 13 of electron beam, continue heating evaporation, circulation ensures evaporation source continuous firing and so forth.In Fig. 1,18 be evaporating materials in the most tuftlet spot position 13 of electron beam by the material vapor after beam bombardment.
As shown in Figure 2, evaporating materials e Foerderanlage comprises runner 20, by driven by motor; The thread evaporating materials being made into plate-like is enclosed within runner 20, and evaporating materials dish 21 passes through between upper roller 24 and bottom roller 23 around the thread evaporating materials 17 got off, and thread evaporating materials is transported to electron beam spot minimum position 13 by runner 20.During thread evaporating materials 17 hardness height, bottom roller 23 and upper roller 24 are without driven by motor; When thread evaporating materials 17 is flexible material, bottom roller 23 and upper roller 24 use driven by motor.
As shown in Figure 3, focused beam evaporation coating device comprises vacuum cavity 41; Substrate 43 to be coated is placed in described vacuum cavity 41; Described vacuum cavity 41 is communicated with air-bleed system 44; Focused beam evaporation source of the present invention is provided with in vacuum cavity 41 below described substrate to be coated 43.In Fig. 3,45 is the steam after evaporating materials evaporation.
When actual motion, can according to the wire feed rate of testing data and experience adjustments evaporating materials e Foerderanlage, always need not need the feedback signal of Electron-beam measuring device ensureing automatic transport evaporating materials under the condition that material evaporates completely, feedback signal can as the remedial measures of the foundation and Special Circumstances that adjust evaporating materials e Foerderanlage wire feed rate.
This evaporation source according to the power of the difference adjustment electron beam generating device of vaporator rate, and then can change the power density of electron beam.
Claims (4)
1. a focused beam evaporation source, is characterized in that, comprising:
Electron beam generating device (10): for generation of large line parallel electron beam (11);
Electron beam transmission device: assemble for converging bundle (12) after accelerating for making described large line parallel electron beam (11), and be transferred to the most tuftlet spot position (13) of electron beam;
Evaporating materials e Foerderanlage (16): for thread evaporating materials (17) being transported to the most tuftlet spot position (13) of described electron beam after the detection signal receiving Electron-beam measuring device (15);
At least one Electron-beam measuring device (15): for detecting the angular-spread beam (14) after the most tuftlet spot position (13) of electron beam.
2. focused beam evaporation source according to claim 1, is characterized in that, the vertical section diameter of described thread evaporating materials mates with the described minimum beam spot diameter, restrainting (12) that converges.
3. focused beam evaporation source according to claim 2, is characterized in that, described electron beam generating device is the one in belt rifle, straight rifle, e type rifle, hollow cathode rifle.
4. a focused beam evaporation coating device, comprises vacuum cavity (41); Substrate to be coated (43) is placed in described vacuum cavity (41); Described vacuum cavity (41) is communicated with air-bleed system (44); It is characterized in that, in the vacuum cavity (41) of described substrate to be coated (43) below, be provided with the described focused beam evaporation source of one of claims 1 to 3.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410698963.3A CN104611672A (en) | 2014-11-28 | 2014-11-28 | Focusing electron-beam evaporation source and evaporation coating apparatus |
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| CN201410698963.3A CN104611672A (en) | 2014-11-28 | 2014-11-28 | Focusing electron-beam evaporation source and evaporation coating apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105586569B (en) * | 2015-12-29 | 2018-02-06 | 中国电子科技集团公司第十八研究所 | A kind of line evaporation source for being used to prepare CIGS solar cell absorbed layers |
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| CN1427445A (en) * | 2001-12-13 | 2003-07-02 | 索尼国际(欧洲)股份有限公司 | Defect and conductivity processing method for conductive nano-structure |
| CN1711368A (en) * | 2002-11-05 | 2005-12-21 | 特瓦薄膜技术有限公司 | Device and method for the evaporation of lamina material |
| CN101314842A (en) * | 2008-07-22 | 2008-12-03 | 四川大学 | Method for producing boron carbide film with electron beam evaporation technique |
| CN101527264A (en) * | 2009-04-03 | 2009-09-09 | 四川大学 | Gate dielectric taking TiO2 as MOS structure and preparation method thereof |
| CN101619436A (en) * | 2009-08-06 | 2010-01-06 | 四川大学 | Method and device for preparing microsphere boron carbide film by electron beam evaporation technology |
| CN102762762A (en) * | 2010-02-22 | 2012-10-31 | 株式会社爱发科 | Vacuum processing device |
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2014
- 2014-11-28 CN CN201410698963.3A patent/CN104611672A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1427445A (en) * | 2001-12-13 | 2003-07-02 | 索尼国际(欧洲)股份有限公司 | Defect and conductivity processing method for conductive nano-structure |
| CN1711368A (en) * | 2002-11-05 | 2005-12-21 | 特瓦薄膜技术有限公司 | Device and method for the evaporation of lamina material |
| CN101314842A (en) * | 2008-07-22 | 2008-12-03 | 四川大学 | Method for producing boron carbide film with electron beam evaporation technique |
| CN101527264A (en) * | 2009-04-03 | 2009-09-09 | 四川大学 | Gate dielectric taking TiO2 as MOS structure and preparation method thereof |
| CN101619436A (en) * | 2009-08-06 | 2010-01-06 | 四川大学 | Method and device for preparing microsphere boron carbide film by electron beam evaporation technology |
| CN102762762A (en) * | 2010-02-22 | 2012-10-31 | 株式会社爱发科 | Vacuum processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105586569B (en) * | 2015-12-29 | 2018-02-06 | 中国电子科技集团公司第十八研究所 | A kind of line evaporation source for being used to prepare CIGS solar cell absorbed layers |
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