JP2017101279A5 - - Google Patents
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- JP2017101279A5 JP2017101279A5 JP2015234800A JP2015234800A JP2017101279A5 JP 2017101279 A5 JP2017101279 A5 JP 2017101279A5 JP 2015234800 A JP2015234800 A JP 2015234800A JP 2015234800 A JP2015234800 A JP 2015234800A JP 2017101279 A5 JP2017101279 A5 JP 2017101279A5
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- Prior art keywords
- cathode
- arc
- heating
- forming apparatus
- type film
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005755 formation reaction Methods 0.000 claims description 5
- 230000001154 acute Effects 0.000 claims description 4
- 238000010891 electric arc Methods 0.000 claims description 3
- 239000010406 cathode material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 22
- 238000001816 cooling Methods 0.000 claims 4
- 238000010894 electron beam technology Methods 0.000 claims 3
- 230000001939 inductive effect Effects 0.000 claims 2
- 238000004093 laser heating Methods 0.000 claims 2
- 230000001678 irradiating Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000011802 pulverized particle Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Description
但し、アークスポットは、磁場や陰極の表面状態により移動していくため、新しい移動先が既に高温になっていることが好ましく、高温領域は大きい方が好ましい。実質的な放電面全体が高温になっていることが最も好ましい。
次に、陰極の利用効率を従来よりも向上させるという観点から、陰極の周囲に磁界を発生させる磁界発生手段を設け、所定の向きに磁界を生じさせることが好ましい。具体的には、一般に、円柱状の陰極を用いたアーク式成膜装置の場合、図６に示すように、アーク放電中におけるアークスポット３１は、陰極４の先端Ｔから根本（図示省略）に向かって陰極４の側面をスパイラル状に移動する。このとき、アークスポット３１が通過した部分のカーボンのみが昇華してＤＬＣ膜の成膜に用いられ、通過しなかった部分のカーボンは昇華せずＤＬＣ膜の成膜に用いられない。このため、円柱状の陰極４を用いたアーク式成膜装置の場合、陰極４の利用効率は低く留まっていた。
これに対して、図５に示すように、アーク式成膜装置に磁界発生手段としてのコイル１２を設けて、陰極４の軸方向と磁力線Ｍとのなす角度θが陰極４の先端Ｔ側が鋭角になるように磁界を生じさせた場合、アークスポットは角度θが鋭角になっている方向に向けて移動する性質があるため、アークスポットが陰極４の先端Ｔに留まり、陰極４の先端Ｔ側から順次カーボンが消費される。この結果、陰極４の利用効率を従来よりも向上させることができる。なお、磁界発生手段として図５では、コイル１２を用いているが、これに限定されず、永久磁石を用いてもよい。
However, since the arc spot moves according to the magnetic field and the surface state of the cathode, it is preferable that the new destination is already at a high temperature, and it is preferable that the high temperature region is large. Most preferably, the substantial entire discharge surface is hot.
Next, from the viewpoint of improving the utilization efficiency of the cathode, it is preferable to provide a magnetic field generating means for generating a magnetic field around the cathode to generate the magnetic field in a predetermined direction. Specifically, in general, in the case of an arc type film forming apparatus using a columnar cathode, as shown in FIG. 6, the arc spot 31 during arc discharge extends from the tip T of the cathode 4 to the root (not shown). The side surface of the cathode 4 is moved spirally. At this time, only the portion of the carbon through which the arc spot 31 has passed is sublimated and used for forming the DLC film, and the portion of the carbon that has not passed through is not sublimated and is not used for forming the DLC film. For this reason, in the case of an arc-type film forming apparatus using the columnar cathode 4, the utilization efficiency of the cathode 4 remains low.
On the other hand, as shown in FIG. 5, a coil 12 as a magnetic field generating means is provided in the arc type film forming apparatus, and the angle θ formed between the axial direction of the cathode 4 and the magnetic force lines M is an acute angle on the tip T side of the cathode 4. When the magnetic field is generated so that the arc spot has a characteristic that the arc spot moves in a direction in which the angle θ is an acute angle, the arc spot stays at the tip T of the cathode 4 and the tip T side of the cathode 4 Carbon is consumed sequentially. As a result, the utilization efficiency of the cathode 4 can be improved as compared with the prior art. In FIG. 5, the coil 12 is used as the magnetic field generating means. However, the present invention is not limited to this, and a permanent magnet may be used.
請求項１、２に係る発明は、以上の知見に基づくものであり、請求項１に記載の発明は、
カーボンを主成分とする陰極材料を用いてアーク放電を行うことにより、前記陰極表面に形成されたアークスポットから前記カーボンを昇華させて、基材表面にカーボンを主成分とする炭素膜を成膜するアーク式成膜装置であって、
前記陰極を保持する陰極保持手段と、
前記基材を保持する基材保持手段と、
前記陰極保持手段および前記基材保持手段が収容された真空チャンバーとを備えており、
成膜中、少なくとも前記陰極の前記アークスポット近傍の領域の温度を５００〜３０００℃にする手段を備えており、
前記陰極が円柱状の陰極であり、
前記円柱状の陰極の軸方向と磁力線とのなす角度が、前記陰極の先端側が鋭角になるように磁界を生じさせる磁界発生手段を備えていることを特徴とするアーク式成膜装置である。
The inventions according to claims 1 and 2 are based on the above knowledge, and the invention according to claim 1
By performing arc discharge using a cathode material mainly composed of carbon, the carbon is sublimated from the arc spot formed on the cathode surface, and a carbon film mainly composed of carbon is formed on the substrate surface. Arc type film forming apparatus
Cathode holding means for holding the cathode;
Substrate holding means for holding the substrate;
A vacuum chamber containing the cathode holding means and the substrate holding means,
During film formation, it comprises means for setting the temperature of the region near the arc spot of the cathode to 500 to 3000 ° C. ,
The cathode is a cylindrical cathode;
An arc type film forming apparatus comprising a magnetic field generating means for generating a magnetic field so that an angle formed between an axial direction of the cylindrical cathode and a line of magnetic force becomes an acute angle on the tip side of the cathode .
即ち、請求項１６に記載の発明は、
前記円柱状の陰極を前記基材に向けて送り出す送り出し機構を備えていることを特徴とする請求項１ないし請求項１５のいずれか１項に記載のアーク式成膜装置である。
That is, the invention according to claim 16 is
Claims 1, characterized in that it comprises a feeding mechanism feeding the cylindrical cathode toward said substrate is arc deposition apparatus according to any one of claims 1 5.
また、請求項１７に記載の発明は、
請求項１ないし請求項１６のいずれか１項に記載のアーク式成膜装置を用いて、
少なくとも前記陰極の前記アークスポット近傍の領域の温度を５００〜３０００℃にしながら前記炭素膜を成膜することを特徴とする成膜方法である。
The invention according to claim 17 is
Using the arc-type film forming apparatus according to any one of claims 1 to 16 ,
In the film forming method, the carbon film is formed at a temperature of at least 500 to 3000 ° C. in the vicinity of the arc spot of the cathode.
請求項１７に記載の発明においては、上記したように、成膜に際して粉砕粒子の発生が抑制されるため、平滑なＤＬＣ膜を安定して成膜することができる。また、陰極の利用効率を上昇させることもできる。
In the invention according to claim 17, as described above, since the generation of pulverized particles is suppressed during film formation, a smooth DLC film can be stably formed. Moreover, the utilization efficiency of a cathode can also be raised.
Claims (17)
前記陰極を保持する陰極保持手段と、
前記基材を保持する基材保持手段と、
前記陰極保持手段および前記基材保持手段が収容された真空チャンバーとを備えており、
成膜中、少なくとも前記陰極の前記アークスポット近傍の領域の温度を５００〜３０００℃にする手段を備えており、
前記陰極が円柱状の陰極であり、
前記円柱状の陰極の軸方向と磁力線とのなす角度が、前記陰極の先端側が鋭角になるように磁界を生じさせる磁界発生手段を備えていることを特徴とするアーク式成膜装置。 By performing arc discharge using a cathode material mainly composed of carbon, the carbon is sublimated from the arc spot formed on the cathode surface, and a carbon film mainly composed of carbon is formed on the substrate surface. Arc type film forming apparatus
Cathode holding means for holding the cathode;
Substrate holding means for holding the substrate;
A vacuum chamber containing the cathode holding means and the substrate holding means,
During film formation, it comprises means for setting the temperature of the region near the arc spot of the cathode to 500 to 3000 ° C. ,
The cathode is a cylindrical cathode;
An arc-type film forming apparatus comprising magnetic field generating means for generating a magnetic field so that an angle formed between an axial direction of the columnar cathode and a line of magnetic force is an acute angle on the tip side of the cathode .
前記陰極の自己加熱が、前記アークスポットにおいて発生した熱および／または前記陰極の抵抗発熱により行なわれることを特徴とする請求項１４に記載のアーク式成膜装置。 The heating means for heating the cathode is any one of a heater, induction heating, electron beam heating, laser heating,
The arc-type film forming apparatus according to claim 14, wherein the self-heating of the cathode is performed by heat generated at the arc spot and / or resistance heating of the cathode.
少なくとも前記陰極の前記アークスポット近傍の領域の温度を５００〜３０００℃にしながら前記炭素膜を成膜することを特徴とする成膜方法。 Using the arc-type film forming apparatus according to any one of claims 1 to 16 ,
A film forming method comprising forming the carbon film while maintaining a temperature of at least 500 to 3000 ° C. in a region near the arc spot of the cathode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015234800A JP6528050B2 (en) | 2015-12-01 | 2015-12-01 | ARC type film forming apparatus and film forming method |
| PCT/JP2016/085551 WO2017094775A1 (en) | 2015-12-01 | 2016-11-30 | Arc film formation apparatus and film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015234800A JP6528050B2 (en) | 2015-12-01 | 2015-12-01 | ARC type film forming apparatus and film forming method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017101279A JP2017101279A (en) | 2017-06-08 |
| JP2017101279A5 true JP2017101279A5 (en) | 2019-03-07 |
| JP6528050B2 JP6528050B2 (en) | 2019-06-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015234800A Active JP6528050B2 (en) | 2015-12-01 | 2015-12-01 | ARC type film forming apparatus and film forming method |
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| JP (1) | JP6528050B2 (en) |
| WO (1) | WO2017094775A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6533818B2 (en) * | 2017-10-20 | 2019-06-19 | 株式会社リケン | Sliding member and piston ring |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0517866A (en) * | 1991-07-11 | 1993-01-26 | Nissin Electric Co Ltd | Arc type evaporating source |
| JP4356162B2 (en) * | 1999-12-28 | 2009-11-04 | 日新電機株式会社 | Arc type evaporation source |
| JP4679004B2 (en) * | 2000-09-26 | 2011-04-27 | 新明和工業株式会社 | Arc evaporation source apparatus, driving method thereof, and ion plating apparatus |
| JP3993388B2 (en) * | 2001-01-16 | 2007-10-17 | 株式会社神戸製鋼所 | Vacuum arc evaporation source |
| MX369729B (en) * | 2013-04-30 | 2019-11-20 | Nippon Itf Inc | Arc evaporation source. |
-
2015
- 2015-12-01 JP JP2015234800A patent/JP6528050B2/en active Active
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2016
- 2016-11-30 WO PCT/JP2016/085551 patent/WO2017094775A1/en active Application Filing
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