CN104600108A - Nitride high electron mobility transistor epitaxial structure and preparation method thereof - Google Patents
Nitride high electron mobility transistor epitaxial structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a nitride high electron mobility transistor epitaxial structure and a preparation method thereof. The nitride high electron mobility transistor epitaxial structure includes a substrate layer on which a core layer, a buffer layer, a barrier layer and a channel layer are sequentially grown on the substrate layer from the bottom up, wherein the substrate layer is sapphire or SiC; the core layer is AlN, GaN or AlGaN; the buffer layer is GaN, and the channel layer is GaN; the barrier layer is a composite InAlN barrier including two layers of structures, the first layer is InAlN with constant common components (the In component is a value within 0.16-0.19, and lattice-matched with GaN), the second layer is InAlN with gradually changed components, and the In component is gradually changed from a value within 0.16-0.19 to zero from the bottom up. According to the nitride high electron mobility transistor epitaxial structure and the preparation method thereof, the damage to a heterojunction interface is avoided, and the transport characteristics of two-dimensional electron gas is improved; compared with the InAlN barrier layer with constant common components, the In component of the InAlN barrier layer is gradually changed to be zero from the bottom up, so that the InAlN alloy is gradually changed to be AlN with stronger polarization effect, and thereby the electron concentration of the channel can be further improved.
Description
Technical field
The invention belongs to semiconductor single crystal thin film technical field, particularly relate to nitride high electronic migration rate transmistor epitaxial structure of InAlN barrier layer and preparation method thereof.
Background technology
Millimeter wave power device is the critical component of the systems such as microwave communication, gallium nitride (GaN) based high electron mobility field-effect transistor (HEMT) is as third generation wide bandgap compound semiconductor device, there is high frequency, powerful excellent specific property, make it have important application prospect in field of microwave communication.
As everyone knows, the grid of device are long closely related with the frequency characteristic of device.In low-frequency range, the frequency of device grows up to inverse ratio with grid substantially; Along with the shortening that grid are long, when particularly entering into millimere-wave band, dead resistance and short-channel effect can the liftings of remarkable constraint device frequency.
The mode suppressing short-channel effect the most basic is started with from the optimization of material structure, utilizes polarization and energy band engineering improve the two dimension constraint characteristic of channel electrons and strengthen grid to the control ability of channel electrons.For traditional AlGaN/GaN HEMT-structure, usually adopt groove technology to reduce the thickness of grid lower barrierlayer, improve the aspect ratio (Lg/d) of grid length and barrier layer thickness, thus strengthen channel electrons grid-control ability.But the requirement of grid grooving to technology controlling and process is higher, and comparatively large to the injury on barrier layer surface, easily introduce new defect.In raising channel electrons constraint characteristic, usually adopt low Al component (general about 0.04) AlGaN to make back of the body potential barrier, form AlGaN/GaN/AlGaN double heterojunction, improve the quantum limit of channel electrons to a certain extent.But the AlGaN of this low component difficulty on Material growth is comparatively large, and crystal mass is poor, and heat conductivility is bad.
Ohmic contact characteristic has a great impact the frequency characteristic of device and power characteristic, and this impact is particularly outstanding in millimere-wave band, becomes the main parasitic resistance affecting device performance.The source-drain electrode of AlGaN/GaN HEMT is produced in AlGaN potential barrier, need to adopt the method for high annealing to form good ohmic contact, in order to reduce ohmic contact resistance, usually need to improve annealing temperature, this will cause Ohm contact electrode rough surface, edge quality declines, thus limits reducing and the raising of device withstand voltage of device source and drain spacing.
In sum, no matter be AlGaN/GaN single heterojunction or AlGaN/GaN/AlGaN double heterojunction, be not well positioned to meet the performance requirement of millimeter wave power device.N polar GaN/AlGaN HEMT is the new device structure developed rapidly in recent years.Buergerite GaN, according to the difference of the direction of growth and surface atom kind, can be divided into Ga polarity (Ga face) and N polarity (N face) two classes.For Ga polar material, substrate is pointed in spontaneous polarization direction, and the spontaneous polarization direction of N polar material is away from substrate.Due to polarity inversion, N polarity HEMT needs to adopt inverted heterostructure, and namely GaN channel layer is positioned at above AlGaN potential barrier, could polarize and produce two-dimensional electron gas in channel layer.This inverted structure makes N polarity HEMT have the unrivaled advantage of Ga polarity just: one, source-drain electrode is directly produced on GaN, because GaN is less than AlGaN energy gap, thus has lower ohmic contact resistance; Two, AlGaN potential barrier is below channel layer, forms natural back of the body potential barrier, strengthens the quantum limit of two-dimensional electron gas, improves the pinch-off behavior transporting performance and device of electronics.In addition, N polarity HEMT surface Ga N has lower surface density of states, significantly can suppress current collapse effect.Channel layer can design as far as possible thin, contributes to improving device aspect ratio (Lg/d), reduces short-channel effect.Therefore, N polar GaN based hemts is applicable to making millimeter wave power device very much.
In order to increase the channel electrons concentration of N polar GaN HEMT further, researcher adopts InAlN to make potential barrier, devises GaN/InAlN HEMT-structure.Have benefited from the polarity effect that InAlN is stronger, this structural theory two-dimensional electron gas doubles above than GaN/AlGaN structure.But, and the growth of Ga polarity InAlN/GaN structure I nAlN potential barrier is different on GaN channel layer, the GaN/InAlN structure I nAlN barrier layer growth of N polarity is below GaN channel layer, and this structure has certain difficulty in Material growth technique.Due to InN poor chemical stability, research shows, when temperature is higher than 600 DEG C, the InN in InAlN alloy easily decomposes, and temperature is higher, decomposes more remarkable.When temperature reaches more than 1000 DEG C, in the InAlN alloy of growth, the component of In is extremely low, is almost 0.And MOCVD epitaxy AlN and GaN needs higher growth temperature, usually more than 1000 DEG C, to reach good crystalline quality.Because both InN, AlN exist larger epitaxy technique difference, consider being incorporated to and InAlN alloy crystalline quality of In to compromise, MOCVD epitaxy InAlN adopts the growth temperature of about 800 DEG C usually.Thus, to have grown after InAlN potential barrier before growing GaN raceway groove, a temperature-rise period must have been carried out, intensification can cause the volatilization of InAlN surface In atom, thus deface pattern, worsen GaN/InAlN interface quality, reduce the transport property of raceway groove two-dimensional electron gas.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of nitride high electronic migration rate transmistor epitaxial structure and preparation method thereof.
Technical scheme: for solving the problems of the technologies described above, a kind of nitride high electronic migration rate transmistor epitaxial structure provided by the invention and growing method thereof, comprise substrate layer, on this substrate layer, growth has nucleating layer, resilient coating, barrier layer and channel layer successively from bottom to up, wherein: described substrate layer is sapphire or SiC; Described nucleating layer is AlN, GaN or AlGaN; Described resilient coating is GaN, and described channel layer is GaN; Described barrier layer is compound InAlN potential barrier, comprise double-layer structure, ground floor is the constant InAlN(In component of conventional constituents is some values within the scope of 0.16-0.19, with GaN Lattice Matching), the second layer is content gradually variational InAlN, and wherein In component is gradient to 0 by values some within the scope of 0.16-0.19 from bottom to top.
As preferably, described compound InAlN barrier layer ground floor thickness is 0-30nm, and second layer thickness is 5-20nm, and gross thickness is 5-50nm.
As preferably, described channel layer thickness is 5 ~ 30nm.
As preferably, the growth temperature of described InAlN barrier layer is two sections of compounds, and first paragraph is temperature constant, and be about 700 ~ 850 DEG C, second segment is that temperature gradients raises, and is increased to about 1000 ~ 1100 DEG C from about 700 ~ 850 DEG C of gradual changes.
A preparation method for nitride high electronic migration rate transmistor epitaxial structure, comprises the following steps: a, utilize MOCVD epitaxy growing technology; B, be first warming up to about 1050 DEG C, substrate toasted or nitrogen treatment 5 ~ 10 minutes; C, then pass into ammonia, trimethyl aluminium, at substrate layer superficial growth nucleating layer; D, closedown trimethyl aluminium, open trimethyl gallium, continue to pass into ammonia, raw at N polar GaN resilient coating; E, close trimethyl gallium, be cooled to 700 ~ 850 DEG C stable after, open trimethyl aluminium, trimethyl indium, growth regulation one deck InAlN barrier layer; After f, ground floor InAlN growth terminates, keep source state constant, gradual change raised temperature to 1000 ~ 1100 DEG C, grow the second layer component gradual change InAlN barrier layer; G, closedown trimethyl aluminium, trimethyl indium, open trimethyl gallium, keep temperature-resistant, growing GaN channel layer; H, grown channel layer after, close trimethyl gallium, be cooled to room temperature.
A kind of compound InAlN barrier layer N polar GaN HEMT epitaxial material structure provided by the invention and preparation method; This compound InAlN barrier layer comprises double-layer structure, ground floor (lower floor) for the InAlN(In component that component is constant be some values within the scope of 0.16-0.19, with GaN Lattice Matching), the second layer (upper strata) for content gradually variational InAlN(In component from the bottom to top within the scope of 0.16-0.19 some values be gradient to 0).Utilize high temperature to reduce this research conclusion of incorporation efficiency of In, the growth temperature of compound InAlN barrier layer also adopts the mode of two sections of compounds.Namely the InAIN layer that ground floor component is constant adopts constant growth temperature to stablize to keep component, and the InAIN layer of second layer content gradually variational adopts the epitaxy technique of growth temperature gradual change rising, realizes InAlN content gradually variational.By adopting the InAlN barrier layer of temperature gradients lifting technique regrowth one deck content gradually variational above conventional InAlN barrier layer, forming two-layer composite potential barrier and replacing the InAlN potential barrier that conventional component is constant.
Adopt this composite potential barrier, on the one hand, do not need when subsequent growth GaN channel layer to heat up, avoid the destruction to heterojunction boundary like this, improve the transport property of two-dimensional electron gas; On the other hand, compared with the InAlN barrier layer that conventional constituents is constant, this compound InAlN barrier layer In component is gradient to 0 from the bottom to top, is gradient to AlN, has stronger polarity effect, can improve channel electrons concentration further by InAlN alloy; Therefore, this employing temperature gradients lifting technique realizes the new structure of the InAlN barrier layer of content gradually variational and technique is a kind of effective ways improving N polar GaN/InAlN HEMT raceway groove two-dimensional electron gas transport property.
Beneficial effect: the present invention has following advantage in terms of existing technologies:
1) InAlN adopting temperature gradients lifting technique to realize content gradually variational makes the second barrier layer and forms composite construction, replace the InAlN barrier layer usually adopting the component of steady temperature growth constant, do not need when subsequent growth GaN channel layer to heat up, avoid the destruction to heterojunction boundary like this, improve the transport property of two-dimensional electron gas.
2), compared with constant with conventional constituents InAlN barrier layer, this InAlN barrier layer In component is gradient to 0 from the bottom to top, is gradient to AlN, has stronger polarity effect, can improve channel electrons concentration further by InAlN alloy.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
As shown in Figure 1, a kind of nitride high electronic migration rate transmistor epitaxial structure, it grows into stratum nucleare 2, resilient coating 3, barrier layer 4 & 5 and channel layer 6 successively by MOCVD technology on substrate layer 1, and concrete method is as follows:
embodiment 1
1) select C face SiC substrate, utilize MOCVD technology growth;
2) 1080 DEG C and 100Torr, hydrogen atmosphere toasts 10 minutes;
3) 1100 DEG C, ammonia and trimethyl aluminium is passed into, at the thick AlN nucleating layer of substrate surface growth 50nm;
4) ammonia, trimethyl gallium is passed into, growth 2um thick N polar GaN resilient coating;
5) close trimethyl gallium, be cooled to 780 DEG C, open trimethyl aluminium, trimethyl indium, growth regulation one deck InAlN barrier layer, thickness is that 20nm, In component is constant, is 0.18;
6) keep trimethyl aluminium, trimethyl indium flow constant, while gradual change raises growth temperature to 1050 DEG C, the InAlN of the thick content gradually variational of regrowth 15nm, is second layer barrier layer;
7) 1050 DEG C, close trimethyl aluminium, trimethyl indium, open trimethyl gallium, the thick GaN channel layer of growth 20nm;
8) room temperature is down to.
N polar GaN/IlnAlN HEMT room temperature two-dimensional electron gas the surface density of growth reaches 2.3E13cm
-2, two-dimensional electron gas mobility reaches 1200cm
2/ Vs, demonstrates superior electrology characteristic.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. a nitride high electronic migration rate transmistor epitaxial structure, is characterized in that: comprise substrate layer, nucleating layer, resilient coating, barrier layer and channel layer from top to bottom successively, and described substrate layer is sapphire or SiC; Described nucleating layer is the one in AlN, GaN or AlGaN; Described resilient coating is GaN, and described channel layer is GaN; Described barrier layer is compound InAlN potential barrier.
2. nitride high electronic migration rate transmistor epitaxial structure according to claim 1, it is characterized in that: described compound InAlN potential barrier comprises double-layer structure, ground floor is the constant InAlN of conventional constituents, In component span is 0.16-0.19, with GaN Lattice Matching, the second layer is content gradually variational InAlN, and wherein In component is gradient to 0 by values some within the scope of 0.16-0.19 from bottom to top.
3. nitride high electronic migration rate transmistor epitaxial structure according to claim 2, is characterized in that: described content gradually variational N polarity compound InAlN barrier layer ground floor thickness is 0 ~ 30nm, and second layer thickness is 5-20nm, and gross thickness is 5-50nm.
4. nitride high electronic migration rate transmistor epitaxial structure according to claim 2, is characterized in that: described content gradually variational N polarity InAlN barrier layer growth temperature is gradual change, is gradient to 1000 ~ 1100 DEG C from 700 ~ 850 DEG C.
5. a preparation method for the nitride high electronic migration rate transmistor epitaxial structure according to any one of claim 1 ~ 4, is characterized in that: comprise the following steps:
A, utilize MOCVD epitaxy growing technology;
B, be first warming up to 1050 DEG C, substrate toasted or nitrogen treatment 5 ~ 10 minutes;
C, then pass into ammonia, trimethyl aluminium, at substrate layer superficial growth nucleating layer;
D, closedown trimethyl aluminium, open trimethyl gallium, continue to pass into ammonia, raw at N polar GaN resilient coating;
E, close trimethyl gallium, be cooled to 700 ~ 850 DEG C stable after, open trimethyl aluminium, trimethyl indium, growth regulation one deck InAlN barrier layer;
After f, ground floor InAlN growth terminates, keep source state constant, gradual change raised temperature to 1000 ~ 1100 DEG C, grow the second layer component gradual change InAlN barrier layer;
G, closedown trimethyl aluminium, trimethyl indium, open trimethyl gallium, keep temperature-resistant, growing GaN channel layer; H, grown channel layer after, close trimethyl gallium, be cooled to room temperature.
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| CN105047532A (en) * | 2015-06-29 | 2015-11-11 | 中国科学院半导体研究所 | Method of obtaining two-dimensional electron gas in SiC material |
| CN106653838A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz light source device and manufacturing method thereof |
| CN108701714A (en) * | 2016-02-22 | 2018-10-23 | 英特尔公司 | Create the device and method of the active channel with rich indium side surface and bottom surface |
| CN109962100A (en) * | 2019-04-03 | 2019-07-02 | 中国科学院微电子研究所 | P-type channel GaN base structure and electronic device |
| CN112687738A (en) * | 2020-12-24 | 2021-04-20 | 晶能光电（江西）有限公司 | N-polar AlGaN/GaN HEMT device and growth method thereof |
| CN113066851A (en) * | 2021-03-09 | 2021-07-02 | 吉林大学 | InAlGaN/GaN heterojunction structure and growth method thereof |
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| CN105047532A (en) * | 2015-06-29 | 2015-11-11 | 中国科学院半导体研究所 | Method of obtaining two-dimensional electron gas in SiC material |
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| CN106653838A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz light source device and manufacturing method thereof |
| CN106653838B (en) * | 2015-11-04 | 2019-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of Terahertz light source device and preparation method thereof |
| CN108701714A (en) * | 2016-02-22 | 2018-10-23 | 英特尔公司 | Create the device and method of the active channel with rich indium side surface and bottom surface |
| CN108701714B (en) * | 2016-02-22 | 2021-09-07 | 英特尔公司 | Apparatus and method for creating an active channel with indium rich side and bottom surfaces |
| CN109962100A (en) * | 2019-04-03 | 2019-07-02 | 中国科学院微电子研究所 | P-type channel GaN base structure and electronic device |
| CN109962100B (en) * | 2019-04-03 | 2022-07-05 | 中国科学院微电子研究所 | P-type channel GaN-based structure and electronic device |
| CN112687738A (en) * | 2020-12-24 | 2021-04-20 | 晶能光电（江西）有限公司 | N-polar AlGaN/GaN HEMT device and growth method thereof |
| CN113066851A (en) * | 2021-03-09 | 2021-07-02 | 吉林大学 | InAlGaN/GaN heterojunction structure and growth method thereof |
| CN114141918A (en) * | 2021-11-30 | 2022-03-04 | 江苏第三代半导体研究院有限公司 | Light-emitting diode epitaxial structure suitable for working under high-current condition and preparation method |
| CN114141918B (en) * | 2021-11-30 | 2023-07-18 | 江苏第三代半导体研究院有限公司 | LED epitaxial structure suitable for high-current condition operation and preparation method thereof |
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