CN105047532B - The method that two-dimensional electron gas is obtained in SiC material - Google Patents
The method that two-dimensional electron gas is obtained in SiC material Download PDFInfo
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- CN105047532B CN105047532B CN201510366654.0A CN201510366654A CN105047532B CN 105047532 B CN105047532 B CN 105047532B CN 201510366654 A CN201510366654 A CN 201510366654A CN 105047532 B CN105047532 B CN 105047532B
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims 5
- 230000005669 field effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 69
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 57
- 230000010287 polarization Effects 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000012010 growth Effects 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910000238 buergerite Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
Abstract
The present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, includes the following steps：Step 1：It is the SiC substrate of (0001) to take a crystal face；Step 2：The AlN layers that crystal face is (0001) are made in the SiC substrate that crystal face is (0001).The manufacture that the present invention can be used in SiC base switching devices improves the mobility of channel carrier compared with existing SiC base field-effect transistors, to reduce the on state resistance of device, reduces power consumption.
Description
Technical field
The present invention relates to a kind of acquisition methods of two-dimensional electron gas, and SiC material Two-dimensional electron is used for more particularly, to one kind
The acquisition methods of gas.
Background technology
Third generation ARTSemiconductor silicon carbide (SiC) be it is a kind of with excellent physical characteristic, electrology characteristic broad stopband partly lead
Body material.It has the characteristics that broad-band gap, high breakdown field strength, high heat conductance, thus be very suitable for develop high temperature, it is high-power,
High-frequency power electronic devices.
SiC is currently the only can to aoxidize to form SiO2Compound semiconductor, however in SiC and SiO2Interface there is
Very high interface state density.This is mainly due to device gate oxide formed by aoxidizing SiC, in oxidation process, SiC
In C element partial oxidation formed CO and CO2, more interfacial state, some C of residue are left between gate oxide and SiC substrates
Element fails to aoxidize, and forms C clusters so that gate oxide is not so good as SiO with SiC substrate interface quality2With SiC high.These boundaries
Face state not only reduces conducting carriers in SiC base MOS device raceway grooves, while can form scattering center and further decrease raceway groove and move
Shifting rate so that the conducting resistance of device is high, and working frequency is low.Even if there is the device such as JFET classes to avoid the interfaces MOS, but by
The diffusion coefficient of impurity is very low in SiC, and the method for mostly using ion implanting adulterates it, injects the activationary temperature phase of ion
Work as height, this can all cause larger lens lesion, and thus mobility is not sufficiently high.This just need to find it is a kind of it is new based on
The carrier thermal interface of SiC so that can generate high density, high mobility channel carrier.
Invention content
The method that the object of the present invention is to provide a kind of to obtain two-dimensional electron gas in SiC material is for current
Traditional SiC base MOS devices interface state density is high, and the low feature of carrier mobility, proposition deposits one kind in surface of SiC to be had
High-k, high spontaneous polarization, high critical electric field and Lattice Matching dielectric.So that passing through between the dielectric and SiC
Polarization generates highdensity two-dimensional electron gas.
The first embodiment of the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including walks as follows
Suddenly：
Step 1：It is the SiC substrate of (0001) to take a crystal face；
Step 2：The AlN layers that crystal face is (0001) are made in the SiC substrate that crystal face is (0001).
The second embodiment of the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including walks as follows
Suddenly：
Step 1：The crystal face is taken to beSiC substrate；
Step 2：It is in crystal faceSiC substrate on make crystal face be (0001) AlN layers.
The third embodiment of the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including walks as follows
Suddenly：
Step 1：It is the SiC substrate of (0001) to take a crystal face；
Step 2：The AlN layers that crystal face is (0001) are made in the SiC substrate that crystal face is (0001)；
Step 3：The Al that crystal face is (0001) is made on the AlN layers that crystal face is (0001)xGa1-xN layers.
The fourth embodiment of the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including walks as follows
Suddenly：
Step 1：It is the SiC substrate of (0001) to take a crystal face；
Step 2：Making crystal face in the SiC substrate that crystal face is (0001) isAlN layers；
Step 3：It is in crystal faceAlN layers on make crystal face beAlxGa1-xN layers.
The fifth embodiment of the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including walks as follows
Suddenly：
Step 1：The crystal face is taken to beSiC substrate；
Step 2：It is in crystal faceSiC substrate on make crystal face be (0001) AlN layers；
Step 3：The Al that crystal face is (0001) is made on the AlN layers that crystal face is (0001)xGa1-xN layers.
The present invention can be used in the manufacture of SiC base switching devices, compared with existing SiC base field-effect transistors, improve
The mobility of channel carrier reduces power consumption to reduce the on state resistance of device.
Description of the drawings
For the technology contents further illustrated the present invention, the present invention is done further in detail below in conjunction with drawings and examples
Description, wherein：
Fig. 1 is the structural schematic diagram of the embodiment of the present invention 1；
Fig. 2 is the structural schematic diagram of the embodiment of the present invention 2；
Fig. 3 is the structural schematic diagram of the embodiment of the present invention 3；
Fig. 4 is the structural schematic diagram of the embodiment of the present invention 4；
Fig. 5 is the structural schematic diagram of the embodiment of the present invention 5.
Specific implementation mode
(1) there can be following several film combinations on SiC substrate material：(a)AlN(b)AlN/AlxGa1-xN thin film.
According to wurtzite structure piezoelectricity and spontaneous polarization characteristic, AlxGa1-xThe lattice constant of N materials is less than SiC substrate, i.e.,
AlxGa1-xN Material growths in SiC material by compression generate it is opposite with spontaneous polarization itself to piezoelectric polarization, and serve as a contrast
The piezoelectric polarization of bottom material is 0.Two kinds of materials can generate polarized induction charge, meter in interface due to the variation of polarization intensity
It is as follows to calculate formula：
ρ=- { [Psp(AlxGa1-xN)+Ppe(AlxGa1-xN)]-[Psp(SiC)+Ppe(SiC)]}
Psp and Ppe is the piezoelectricity and spontaneous polarization of respective material respectively.
(2) according to the calculation formula in (1), the interface of two kinds of materials, which need to form positive polarization surface charge, could attract two
In dimensional electron gas to the potential well of hetero-junctions, due to polarization direction between material and of different sizes, the growth of material need to meet one
Fixed high preferred orientation.That is the Al in the face Al (Ga)xGa1-xN Material growths are in the SiC substrate in (0001) face；Or Al components are less than
The Al in 0.6 or so the faces NxGa1-xN Material growths are in the SiC substrate of (0001) face；Or Al components are more than 0.6 or so Al
(Ga) Al in facexGa1-xN Material growths existIn the SiC substrate of face.
Further statement is done to the present invention in conjunction with drawings and examples：
Embodiment 1
Refering to Figure 1, the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including it is as follows
Step：
Step 1：It is the SiC substrate 1 of (0001) to take a crystal face, which is that the SiC substrate 1 of (0001) is that have six sides fine
The crystal structure of zinc ore, the crystal face are that the substrate 1 of (0001) is the crystal face at zero bias angle；
Step 2：The AlN layers 2 that crystal face is (0001) are made in the SiC substrate 1 that crystal face is (0001).
Wherein SiC substrate 1 is semi-insulated material, and thickness is 3-10 μm, and 2 thickness of AlN layers is 5nm-50nm, and it is appropriate to make
N-shaped adulterate and compensate the loss of Two-dimensional electron at two kinds of material interfaces.The growing method that deposition materials use can be chemistry
Vapor deposition, physical vapour deposition (PVD), atomic layer deposition one kind.
Embodiment 2
It please refers to shown in Fig. 2, the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including as follows
Step：
Step 1：The crystal face is taken to beSiC substrate 1, which isSiC substrate 1, be have six sides
The crystal structure of buergerite, the crystal face areSiC substrate 1, be the crystal face at zero bias angle；
Step 2：It is in crystal faceSiC substrate 1, it is upper make crystal face be (0001) AlN layers 2.
Wherein SiC substrate 1 is semi-insulated material, and thickness is 3-10 μm, and 2 thickness of AlN layers is 5nm-50nm, can be fitted
When N-shaped adulterate and compensate the loss of Two-dimensional electron at two kinds of material interfaces.The growing method that deposition materials use being
Learn vapor deposition, physical vapour deposition (PVD), atomic layer deposition one kind.
Embodiment 3
It please refers to shown in Fig. 3, the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including as follows
Step：
Step 1：It is the SiC substrate 1 of (0001) to take a crystal face, which is that the SiC substrate 1 of (0001) is that have six sides fine
The crystal structure of zinc ore, the crystal face are that the substrate 1 of (0001) is the crystal face at zero bias angle；
Step 2：The AlN layers 2 that crystal face is (0001) are made in the SiC substrate 1 that crystal face is (0001)；
Step 3：The Al that crystal face is (0001) is made on the AlN layers 2 that crystal face is (0001)xGa1-xN layers 3, the AlxGa1-xN
Al components x in layer 3 changes from 0 to 1, i.e. one kind of material representative AlN, AlGaN, GaN, i.e. it is GaN material, x 1 that x, which is 0,
It is AlN materials, 0 ＜ x ＜ 1 are AlGaN.
Wherein SiC substrate 1 is semi-insulated material, and thickness is 3-10 μm.2 thickness of AlN insert layers is 0-2nm, you can choosing
It selects and is not inserted into the AlN layers 2, and the thickness of 1nm or so is preferable with 4H-SiC Lattice Matchings because of AlN layers, thus as buffering
Layer can effectively reduce shielding action of the interface state density to polarization charge, and the concentration and electronics to improve two-dimensional electron gas are moved
Shifting rate.AlxGa1-x3 thickness of N layers is 15nm-30nm, can make N-shaped doping appropriate to provide enough Two-dimensional electrons.Deposition
The growing method that material uses can be one kind of chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition.
Embodiment 4
It please refers to shown in Fig. 4, the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including as follows
Step：
Step 1：It is the SiC substrate 1 of (0001) to take a crystal face, which is that the SiC substrate 1 of (0001) is that have six sides fine
The crystal structure of zinc ore, the crystal face are that the substrate 1 of (0001) is the crystal face at zero bias angle；
Step 2：Making crystal face in the SiC substrate 1 that crystal face is (0001) isAlN layers 2；
Step 3：It is in crystal faceAlN layers 2, upper making crystal face isAlxGa1-xN layers 3, the crystal face
ForAlxGa1-xN layers 3, in Al components x be less than 0.6 or so.
Wherein SiC substrate 1 is semi-insulated material, and thickness is 3-10 μm.AlN insert layers 2, thickness 0-2nm,
AlxGa1-x3 thickness of N layers is 15nm-30nm, can make N-shaped doping appropriate to provide enough Two-dimensional electrons.Deposition materials are adopted
Growing method can be one kind of chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition.
Embodiment 5
It please refers to shown in Fig. 5, the present invention provides a kind of method obtaining two-dimensional electron gas in SiC material, including as follows
Step：
Step 1：The crystal face is taken to beSiC substrate 1, which isSiC substrate 1, be have six
The crystal structure of square buergerite, the crystal face areSiC substrate 1, be the crystal face at zero bias angle；
Step 2：It is in crystal faceSiC substrate 1, it is upper make crystal face be (0001) AlN layers 2；
Step 3：The Al that crystal face is (0001) is made on the AlN layers 2 that crystal face is (0001)xGa1-xN layers 3, the crystal face are
(0001) AlxGa1-xAl components x in N layers 3 is more than 0.6 or so.
Wherein SiC substrate 1 is semi-insulated material, and thickness is 3-10 μm.AlN insert layers 2, thickness 0-2nm,
AlxGa1-x3 thickness of N layers is 15nm-30nm, can make N-shaped doping appropriate to provide enough Two-dimensional electrons.Deposition materials are adopted
Growing method can be one kind of chemical vapor deposition, physical vapour deposition (PVD), atomic layer deposition.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (5)
1. a kind of method obtaining two-dimensional electron gas in SiC material, includes the following steps：
Step 1：It is the SiC substrate of (0001) to take a crystal face, and the SiC substrate of (0001) is the crystalline substance for having hexagonal wurtzite
Body structure, and be the crystal face at zero bias angle；
Step 2：The AlN layers that crystal face is (0001) are made in the SiC substrate that crystal face is (0001).
2. a kind of method obtaining two-dimensional electron gas in SiC material, includes the following steps：
Step 1：The crystal face is taken to beSiC substrate, the SiC substrate of (0001) is the crystalline substance for having hexagonal wurtzite
Body structure, and be the crystal face at zero bias angle；
Step 2：It is in crystal faceSiC substrate on make crystal face be (0001) AlN layers.
3. a kind of method obtaining two-dimensional electron gas in SiC material, includes the following steps：
Step 1：It is the SiC substrate of (0001) to take a crystal face, and the SiC substrate of (0001) is the crystalline substance for having hexagonal wurtzite
Body structure, and be the crystal face at zero bias angle；
Step 2：The AlN layers that crystal face is (0001) are made in the SiC substrate that crystal face is (0001)；
Step 3：The Al that crystal face is (0001) is made on the AlN layers that crystal face is (0001)xGa1-xN layers, wherein crystal face is (0001)
AlxGa1-x0 ＜ x ＜ 1 of Al components in N layers.
4. a kind of method obtaining two-dimensional electron gas in SiC material, includes the following steps：
Step 1：It is the SiC substrate of (0001) to take a crystal face, and the SiC substrate of (0001) is the crystalline substance for having hexagonal wurtzite
Body structure, and be the crystal face at zero bias angle；
Step 2：Making crystal face in the SiC substrate that crystal face is (0001) isAlN layers；
Step 3：It is in crystal faceAlN layers on make crystal face beAlxGa1-xN layers, wherein crystal face is
(0001) AlxGa1-xAl components x in N layers is less than 0.6.
5. a kind of method obtaining two-dimensional electron gas in SiC material, includes the following steps：
Step 1：The crystal face is taken to beSiC substrate, the SiC substrate of (0001) is the crystalline substance for having hexagonal wurtzite
Body structure, and be the crystal face at zero bias angle；
Step 2：It is in crystal faceSiC substrate on make crystal face be (0001) AlN layers；
Step 3：The Al that crystal face is (0001) is made on the AlN layers that crystal face is (0001)xGa1-xN layers, wherein crystal face is (0001)
AlxGa1-xAl components x in N layers is more than 0.6.
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| CN104600108A (en) * | 2014-12-31 | 2015-05-06 | 中国电子科技集团公司第五十五研究所 | Nitride high electron mobility transistor epitaxial structure and preparation method thereof |
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| CN104600108A (en) * | 2014-12-31 | 2015-05-06 | 中国电子科技集团公司第五十五研究所 | Nitride high electron mobility transistor epitaxial structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD;Xiaoliang Wang等;《Journal of Crystal Growth》;20061208;第298卷;第835-839页 * |
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