CN104600108B - A kind of nitride high electronic migration rate transmistor epitaxial structure and preparation method thereof - Google Patents
A kind of nitride high electronic migration rate transmistor epitaxial structure and preparation method thereof Download PDFInfo
- Publication number
- CN104600108B CN104600108B CN201410854756.2A CN201410854756A CN104600108B CN 104600108 B CN104600108 B CN 104600108B CN 201410854756 A CN201410854756 A CN 201410854756A CN 104600108 B CN104600108 B CN 104600108B
- Authority
- CN
- China
- Prior art keywords
- layer
- inaln
- gan
- channel
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a kind of nitride high electronic migration rate transmistor epitaxial structure and its growing method, including substrate layer, growth has nucleating layer, cushion, barrier layer and channel layer successively from bottom to up on the substrate layer, wherein：The substrate layer is sapphire or SiC；The nucleating layer is AlN, GaN or AlGaN；The cushion is GaN, and the channel layer is GaN；The barrier layer is compound InAlN potential barriers, comprising double-layer structure, and first layer is the constant InAlN of conventional constituents（In components are some value in the range of 0.16 0.19, with GaN Lattice Matchings）, the second layer is content gradually variational InAlN, and wherein some value is gradient to 0 to In components in the range of 0.16 0.19 from bottom to top.The present invention is avoided that the destruction to heterojunction boundary, improve the transport property of two-dimensional electron gas, compared with the constant InAlN barrier layers of conventional constituents, this InAlN barrier layers In components are gradient to 0 from the bottom to top, AlN is gradient to by InAlN alloys, with stronger polarity effect, channel electrons concentration can be further improved.
Description
Technical field
Moved the invention belongs to the nitride high electron of semiconductor single crystal thin film technical field, more particularly to InAlN barrier layers
Shifting rate transmistor epitaxial structure and preparation method thereof.
Background technology
Millimeter wave power device is the critical component of the systems such as microwave communication, gallium nitride（GaN）Based high electron mobility
Effect transistor（HEMT）As third generation wide bandgap compound semiconductor device, with high frequency, powerful excellent specific property, make
Obtaining it has important application prospect in field of microwave communication.
It is well known that the grid length and the frequency characteristic of device of device are closely related.In low-frequency range, the frequency of device is basic
It is upper to be inversely proportional with grid length；With the shortening of grid length, during especially into millimere-wave band, dead resistance and short-channel effect meeting
The lifting of notable constraint device frequency.
Suppressing short-channel effect most basic mode is started with from the optimization of material structure, utilizes polarization and energy band engineering
Improve the control ability of two dimension constraint characteristic and enhancing grid to channel electrons of channel electrons.For traditional AlGaN/GaN
HEMT-structure, generally reduces the thickness of grid lower barrierlayer using groove technology, improves the aspect ratio of grid length and barrier layer thickness
（Lg/d）, so as to strengthen channel electrons grid-control ability.But requirement of the grid grooving to technology controlling and process is higher, and to barrier layer surface
Injury it is larger, be easily introduced new defect.In terms of channel electrons constraint characteristic is improved, generally using low Al components（Typically
0.04 or so）AlGaN makees back of the body potential barrier, forms AlGaN/GaN/AlGaN double heterojunctions, channel electrons are improved to a certain extent
Quantum confinement.But the AlGaN of this low component difficulty on Material growth is larger, and crystal mass is poor, and heat conductivility is not
It is good.
Ohmic contact characteristic has a great impact to the frequency characteristic and power characteristic of device, and this influence is in millimeter wave
Section is especially prominent, the main parasitic resistance as influence device performance.AlGaN/GaN HEMT source-drain electrode is produced on AlGaN
, it is necessary to use the method for high annealing to form good Ohmic contact in potential barrier, in order to reduce ohmic contact resistance, generally need
Annealing temperature is improved, this will cause Ohm contact electrode rough surface, and edge quality declines, so that between limiting device source and drain
Away from the pressure-resistant raising of diminution and device.
In summary, either AlGaN/GaN single heterojunctions or AlGaN/GaN/AlGaN double heterojunctions, all can not be very
The good performance requirement for meeting millimeter wave power device.N polar GaNs/AlGaN HEMT are develop rapidly in recent years new
Type device architecture.Buergerite GaN can be divided into Ga polarity according to the direction of growth and the difference of surface atom species（Ga faces）And N
Polarity（N faces）Two classes.For Ga polar materials, substrate is pointed in spontaneous polarization direction, and the spontaneous polarization direction of N polar materials is
Away from substrate.Due to polarity inversion, N polarity HEMT needs to be located at AlGaN gesture using inverted heterojunction structure, i.e. GaN channel layers
Above barrier layer, could polarize generation two-dimensional electron gas in channel layer.Exactly this inverted structure causes N polarity HEMT to have Ga
The unrivaled advantage of polarity：First, source-drain electrode is directly produced on GaN, because GaN is smaller than AlGaN energy gap, thus tool
There is relatively low ohmic contact resistance；2nd, AlGaN potential barrier forms natural back of the body potential barrier below channel layer, strengthens two-dimentional electricity
The quantum confinement of sub- gas, improves the pinch-off behavior for transporting performance and device of electronics.In addition, N polarity HEMT surface Gas N
With relatively low surface density of states, current collapse effect can be significantly inhibited.Channel layer can be designed to as far as possible thin, help to carry
High device aspect ratio（Lg/d）, reduce short-channel effect.Therefore, N polar GaNs based hemts are especially suitable for making millimeter wave power device
Part.
In order to further increase N polar GaNs HEMT channel electrons concentration, researcher makees potential barrier using InAlN, if
GaN/InAlN HEMT-structures are counted.Have benefited from the stronger polarity effects of InAlN, this structural theory two-dimensional electron gas ratio
GaN/AlGaN structures double the above.However, with Ga polarity InAlN/GaN structure I nAlN potential barriers be grown in GaN channel layers it
Upper difference, the GaN/InAlN structure I nAlN barrier layers of N polarity are grown in below GaN channel layers, and this structure is in Material growth
There is certain difficulty in technique.Due to InN poor chemical stabilities, research shows, when temperature is higher than 600 DEG C, in InAlN alloys
InN easily decompose, temperature is higher, decompose it is more notable.When temperature reaches more than 1000 DEG C, In in the InAlN alloys of growth
Component is extremely low, and almost 0.And MOCVD epitaxy AlN and GaN need higher growth temperature, generally more than 1000 DEG C, with up to
To preferable crystalline quality.Because there is larger epitaxy technique difference in both InN, AlN, in order to compromise consider In be incorporated to and
InAlN alloy crystalline qualities, MOCVD epitaxy InAlN is generally using 800 DEG C or so of growth temperature.Thus, grow InAlN
Grown after potential barrier before GaN raceway grooves, a temperature-rise period must be carried out, heating can cause the volatilization of InAlN surfaces In atoms,
So as to destroy surface topography, deteriorate GaN/InAlN interface qualities, reduce the transport property of raceway groove two-dimensional electron gas.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention provides a kind of nitride high electronic migration
Rate transmistor epitaxial structure and preparation method thereof.
Technical scheme：In order to solve the above technical problems, a kind of nitride high electronic migration rate transistor that the present invention is provided
Growth has nucleating layer, cushion, gesture successively from bottom to up on epitaxial structure and its growing method, including substrate layer, the substrate layer
Barrier layer and channel layer, wherein：The substrate layer is sapphire or SiC；The nucleating layer is AlN, GaN or AlGaN；It is described slow
Layer is rushed for GaN, the channel layer is GaN；The barrier layer is compound InAlN potential barriers, comprising double-layer structure, and first layer is conventional
The constant InAlN of component（In components are some value in the range of 0.16-0.19, with GaN Lattice Matchings）, the second layer be component gradually
Become InAlN, wherein some value is gradient to 0 to In components in the range of 0.16-0.19 from bottom to top.
Preferably, the compound InAlN barrier layers first layer thickness is 0-30nm, second layer thickness is 5-20nm, always
Thickness is 5-50nm.
Preferably, the channel layer thickness is 5~30nm.
Preferably, the growth temperature of the InAlN barrier layers is two sections compound, first paragraph is that temperature is constant, about
For 700~850 DEG C, second segment is that temperature gradients are elevated, and about 1000~1100 DEG C are increased to from about 700~850 DEG C of gradual changes.
A kind of preparation method of nitride high electronic migration rate transmistor epitaxial structure, comprises the following steps：A, utilization
MOCVD epitaxy growing technology；B, 1050 DEG C or so are warming up to first, substrate is toasted or nitrogen treatment 5~10 minutes；c、
Ammonia, trimethyl aluminium are then passed to, in substrate layer superficial growth nucleating layer；D, closing trimethyl aluminium, open trimethyl gallium, continue
Ammonia is passed through, it is raw in N polar GaN cushions；E, closing trimethyl gallium, are cooled to after 700~850 DEG C of stabilizations, open trimethyl
Aluminium, trimethyl indium, grow first layer InAlN barrier layers；After f, first layer InAlN growth terminate, keep source state constant, gradual change
Temperature is raised to 1000~1100 DEG C, the layer component gradual change InAlN barrier layers of growth regulation two；G, closing trimethyl aluminium, trimethyl indium,
Trimethyl gallium is opened, keeping temperature is constant, grow GaN channel layers；H, grow after channel layer, closed trimethyl gallium, be cooled to
Room temperature.
A kind of compound InAlN barrier layers N polar GaN HEMT epitaxial material structures and preparation method that the present invention is provided；This
Planting compound InAlN barrier layers includes double-layer structure, first layer（Lower floor）For the InAlN that component is constant（In components are 0.16-0.19
In the range of some value, with GaN Lattice Matchings）, the second layer（Upper strata）For content gradually variational InAlN（In components from the bottom to top from
Some value is gradient to 0 in the range of 0.16-0.19）.Using this research conclusion of high temperature reduction In incorporation efficiency, it is combined
The growth temperature of InAlN barrier layers is also by the way of two sections compound.That is the constant InAIN layer of the first layer component is using constant
Growth temperature is to keep component stable, and the InAIN layer of second layer content gradually variational uses the elevated epitaxy technique of growth temperature gradual change,
Realize InAlN content gradually variationals.Above conventional InAlN barrier layers the layer component of technique regrowth one is raised by using temperature gradients
The InAlN barrier layers of gradual change, form two layers of composite potential barrier and replace the constant InAlN potential barriers of conventional component.
Using this composite potential barrier, on the one hand, need not heat up, thus be avoided that to different in subsequent growth GaN channel layers
The destruction of matter junction interface, improves the transport property of two-dimensional electron gas；On the other hand, the InAlN barrier layer constant with conventional constituents
Compare, this compound InAlN barrier layers In components are gradient to 0 from the bottom to top, AlN are gradient to by InAlN alloys, with stronger
Polarity effect, can further improve channel electrons concentration；Therefore, this use temperature gradients rise technique realizes content gradually variational
The new structure and technique of InAlN barrier layers are that a kind of N polar GaNs/InAlN HEMT raceway groove two-dimensional electron gas that improves transports spy
The effective ways of property.
Beneficial effect：The present invention has the advantage that in terms of existing technologies：
1）Realize that the InAlN of content gradually variational makees the second barrier layer formation composite construction, generation using temperature gradients rise technique
For the InAlN barrier layers that the usual component using steady temperature growth is constant, it need not be risen in subsequent growth GaN channel layers
Temperature, thus is avoided that the destruction to heterojunction boundary, improves the transport property of two-dimensional electron gas.
2）Compared with the constant InAlN barrier layers of conventional constituents, this InAlN barrier layers In components are gradient to from the bottom to top
0, AlN is gradient to by InAlN alloys, with stronger polarity effect, channel electrons concentration can be further improved.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of nitride high electronic migration rate transmistor epitaxial structure, it is passed through on substrate layer 1
MOCVD technologies grow nucleating layer 2, cushion 3, barrier layer 4＆5 and channel layer 6 successively, and specific method is as follows：
Embodiment 1
1）C faces SiC substrate is selected, MOCVD technology growths are utilized；
2）1080 DEG C and 100Torr, hydrogen atmosphere is toasted 10 minutes；
3）1100 DEG C, ammonia and trimethyl aluminium are passed through, 50nm thickness AlN nucleating layers are grown in substrate surface；
4）Ammonia, trimethyl gallium are passed through, 2um thickness N polar GaN cushions are grown；
5）Trimethyl gallium is closed, 780 DEG C are cooled to, trimethyl aluminium, trimethyl indium is opened, first layer InAlN potential barriers are grown
Layer, thickness is 20nm, and In components are constant, are 0.18；
6）Keep trimethyl aluminium, trimethyl indium flow constant, gradual change raises growth temperature to regrowth while 1050 DEG C
The InAlN of 15nm thickness content gradually variationals, is second layer barrier layer；
7）1050 DEG C, trimethyl aluminium, trimethyl indium are closed, trimethyl gallium is opened, 20nm thickness GaN channel layers are grown；
8）It is down to room temperature.
The N polar GaNs of growth/IlnAlN HEMT room temperature two-dimensional electron gas surface densities reach 2.3E13cm-2, Two-dimensional electron
Gas mobility reaches 1200cm2/ Vs, shows superior electrology characteristic.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (4)
1. a kind of nitride high electronic migration rate transmistor epitaxial structure, it is characterised in that：Successively from top to bottom include substrate layer,
Nucleating layer, cushion, barrier layer and channel layer, the substrate layer are sapphire or SiC；The nucleating layer be AlN, GaN or
One kind in AlGaN；The cushion is GaN, and the channel layer is GaN；The barrier layer is compound InAlN potential barriers；
The compound InAlN potential barriers include double-layer structure from top to bottom, and first layer is the constant InAlN of conventional constituents, In components
Span is 0.16-0.19, and GaN Lattice Matchings, and the second layer is content gradually variational InAlN, wherein In components from bottom to top by
Some value is gradient to 0 in the range of 0.16-0.19.
2. nitride high electronic migration rate transmistor epitaxial structure according to claim 1, it is characterised in that：The component
It is 0~30nm that gradual change N polarity, which is combined InAlN barrier layer first layers thickness, and second layer thickness is 5-20nm, and gross thickness is 5-
50nm。
3. nitride high electronic migration rate transmistor epitaxial structure according to claim 1, it is characterised in that：The component
Gradual change N polarity InAlN potential barrier layer growth temperatures are gradual changes, and 1000~1100 DEG C are gradient to from 700~850 DEG C.
4. a kind of system according to nitride high electronic migration rate transmistor epitaxial structure according to any one of claims 1 to 3
Preparation Method, it is characterised in that：Comprise the following steps：
A, utilize MOCVD epitaxy growing technology；
B, 1050 DEG C are warming up to first, substrate is toasted or nitrogen treatment 5~10 minutes；
C, ammonia, trimethyl aluminium are then passed to, in substrate layer superficial growth nucleating layer；
D, closing trimethyl aluminium, open trimethyl gallium, continue to be passed through ammonia, raw in N polar GaN cushions；
E, closing trimethyl gallium, are cooled to after 700~850 DEG C of stabilizations, open trimethyl aluminium, trimethyl indium, grow first layer
InAlN barrier layers；
After f, first layer InAlN growth terminate, keep source state constant, gradual change raises temperature to 1000~1100 DEG C, growth regulation
Two layer component gradual change InAlN barrier layers；
G, closing trimethyl aluminium, trimethyl indium, open trimethyl gallium, keeping temperature is constant, grow GaN channel layers；
H, grow after channel layer, closed trimethyl gallium, be cooled to room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410854756.2A CN104600108B (en) | 2014-12-31 | 2014-12-31 | A kind of nitride high electronic migration rate transmistor epitaxial structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410854756.2A CN104600108B (en) | 2014-12-31 | 2014-12-31 | A kind of nitride high electronic migration rate transmistor epitaxial structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104600108A CN104600108A (en) | 2015-05-06 |
| CN104600108B true CN104600108B (en) | 2017-11-07 |
Family
ID=53125755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410854756.2A Expired - Fee Related CN104600108B (en) | 2014-12-31 | 2014-12-31 | A kind of nitride high electronic migration rate transmistor epitaxial structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104600108B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047532B (en) * | 2015-06-29 | 2018-10-02 | 中国科学院半导体研究所 | The method that two-dimensional electron gas is obtained in SiC material |
| CN106653838B (en) * | 2015-11-04 | 2019-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of Terahertz light source device and preparation method thereof |
| CN108701714B (en) * | 2016-02-22 | 2021-09-07 | 英特尔公司 | Apparatus and method for creating an active channel with indium rich side and bottom surfaces |
| CN109962100B (en) * | 2019-04-03 | 2022-07-05 | 中国科学院微电子研究所 | P-type channel GaN-based structure and electronic device |
| CN112687738A (en) * | 2020-12-24 | 2021-04-20 | 晶能光电（江西）有限公司 | N-polar AlGaN/GaN HEMT device and growth method thereof |
| CN113066851A (en) * | 2021-03-09 | 2021-07-02 | 吉林大学 | InAlGaN/GaN heterojunction structure and growth method thereof |
| CN114141918B (en) * | 2021-11-30 | 2023-07-18 | 江苏第三代半导体研究院有限公司 | LED epitaxial structure suitable for high-current condition operation and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101981657A (en) * | 2008-06-19 | 2011-02-23 | 英特尔公司 | Methods of forming buffer layer architecture on silicon and structures formed thereby |
| CN103337517A (en) * | 2013-06-09 | 2013-10-02 | 中国电子科技集团公司第十三研究所 | III-nitride-based device structure containing multi-layer back-barrier |
| CN104051523A (en) * | 2014-07-04 | 2014-09-17 | 苏州能讯高能半导体有限公司 | Semiconductor device with low ohmic contact resistance and manufacturing method thereof |
-
2014
- 2014-12-31 CN CN201410854756.2A patent/CN104600108B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101981657A (en) * | 2008-06-19 | 2011-02-23 | 英特尔公司 | Methods of forming buffer layer architecture on silicon and structures formed thereby |
| CN103337517A (en) * | 2013-06-09 | 2013-10-02 | 中国电子科技集团公司第十三研究所 | III-nitride-based device structure containing multi-layer back-barrier |
| CN104051523A (en) * | 2014-07-04 | 2014-09-17 | 苏州能讯高能半导体有限公司 | Semiconductor device with low ohmic contact resistance and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104600108A (en) | 2015-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104600108B (en) | A kind of nitride high electronic migration rate transmistor epitaxial structure and preparation method thereof | |
| CN105789296B (en) | A kind of aluminum gallium nitride compound/GaN high electron mobility transistor | |
| US10629720B2 (en) | Layered vertical field effect transistor and methods of fabrication | |
| CN108389903B (en) | AlGaN/GaN high electron mobility transistor with graphene heat dissipation layer and preparation method thereof | |
| CN102646700B (en) | Epitaxial structure for nitride high electron mobility transistors of composite buffer layers | |
| CN102969341A (en) | Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer | |
| KR20160138090A (en) | Semiconductor substrate and semiconductor element | |
| CN102427084B (en) | Gallium-nitride-based high electron mobility transistor and manufacturing method | |
| CN103123934B (en) | The gallium nitride based transistor structure with high electron mobility of tool barrier layer and manufacture method | |
| CN103594509A (en) | GaN transistor with high electron mobility and manufacturing method thereof | |
| CN102931230B (en) | Aluminum gallium nitride does the gallium nitrate based HEMT of double heterojunction and the manufacture method of resistive formation | |
| JP2005268493A (en) | Hetero junction field effect transistor | |
| He et al. | GaN high electron mobility transistors with AlInN back barriers | |
| CN108447908A (en) | A kind of high electron mobility transistor | |
| CN109638074B (en) | High electron mobility transistor with n-p-n structure back barrier and manufacturing method thereof | |
| JP2010040828A (en) | Nitride semiconductor device | |
| CN108767008A (en) | A kind of HEMT and preparation method thereof with high resistant GaN buffer layer | |
| CN107706238B (en) | HEMT device and manufacturing method thereof | |
| CN111009579A (en) | Semiconductor heterostructure and semiconductor device | |
| TWI572036B (en) | Nitride crystal structure | |
| Zhang et al. | Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double‐heterostructure high electron mobility transistors | |
| CN103779405A (en) | Epitaxial structure in which pseudomorphic high electron mobility transistor material grows on GaAs substrate and method | |
| CN106449748A (en) | Epitaxial structure of gallium-nitride-based transistors with high electron mobility | |
| JP5875296B2 (en) | Semiconductor substrate and insulated gate field effect transistor | |
| CN204441290U (en) | A kind of In xal 1-xn/AlN composite potential barrier layer gallium nitride radical heterojunction high electron mobility transistor structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171107 Termination date: 20181231 |