CN104591077A - Manufacturing method of lens for collecting color center single photons - Google Patents
Manufacturing method of lens for collecting color center single photons Download PDFInfo
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- CN104591077A CN104591077A CN201310528972.3A CN201310528972A CN104591077A CN 104591077 A CN104591077 A CN 104591077A CN 201310528972 A CN201310528972 A CN 201310528972A CN 104591077 A CN104591077 A CN 104591077A
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Abstract
The invention provides a manufacturing method of a lens for collecting color center single photons. The manufacturing method comprises the following steps: (1) finding the position of a color center in a diamond block; and (2) etching a fan-shaped spherical surface taking the color center as a sphere center into the surface of the diamond block by using a plurality of annular particle beam pattern groups. In each annular particle beam pattern group, the circle centers of annular particle beam patterns are staggered, the radiuses of the inner circles of the annular particle beam patterns are equal, and the circle centers of the annular particle beam patterns are uniformly distributed on a same circumference. The inner diameters of the annular particle beam patterns in the annular particle beam pattern groups gradually decrease to be approximate to 0. Through adoption of the manufacturing method, the collection and utilization efficiencies of the single photons of a diamond single-photon source can be increased remarkably. The manufacturing process of the method is simple. The appearance of a diamond hemispherical lens is smoother under the condition that focused ion beam machining equipment with limited accuracy is used, and the collection and utilization efficiencies of the single photons are closer to theoretical values.
Description
Technical field
The present invention relates to micro-nano device processing technique field and quantum information technology field, specifically, the present invention relates to a kind of preparation method of the lens for the collection of colour center single photon.
Background technology
Opening people in the process of the understanding in the quantum world, photon has played important function as a kind of quantum entity.Wherein, the single-photon source can launching single photon is a kind of main quantum platform.
At present, can the system great majority of controlled transmitting single photon be single emitter quantized system, this system comprises: semiconductor-quantum-point, the sight quantum well that is situated between, unimolecule, monatomic and isolated son and NV colour center (in diamond, nitrogen replaces the colour center combined with adjacent vacancy defect, hereinafter referred colour center) etc.Its operating principle is: when single photon launched by needs, system enters excitation state by external control, and then toward lower state transition, launches single photon simultaneously.Usually, people are coupled by optical microcavity the single photon emission characteristic of this kind of single emitter quantized system.Wherein, the single photon emission system that solid-state, room temperature is compatible has the advantage being easier to be incorporated into existing and easily extensible system.And diamond is exactly a kind of material that typically solid-state, room temperature is compatible, and there is in diamond monatomic characteristic enrich colour center, they at room temperature can stablize transmitting single photon, therefore very have application prospect.But due to adamantine high index of refraction characteristic, most of photons of colour center radiation are in fact all reflected back toward in material bodies cannot be fully used at diamond surfaces.Meanwhile, due to adamantine high rigidity, high index of refraction and weak inductive, processing optical device couples guides optical transport to become very difficult.These all seriously hinder the development of diamond colour center single-photon source.
At present, the practices well of diamond colour center single-photon source is accurately positioned in photon crystal structure or the port of optical fiber by micro-manipulation technology by the diamond of receiving containing single colour center, see document " Nanopositioning of a diamond nanocrystal containing a singlenitrogen-vacancy defect center; Appl.Phys.Lett.94173104 (2009) " and document " Fiber-integrated diamond-based single photon source, Nano Lett.11198 – 2021 (2010).The program effectively improves the Collection utilization efficiency of single photon in some cases .., but its operation more complicated, poor expandability, is very limited in the abundanter quantum physics experiment such as quantum coupling simultaneously.
The method also having some optimizing metal hard rock colour center single-photon sources directly carries out micro-nano technology to single-crystal diamond bulk, improves the collection efficiency of body diamond single-photon source luminescence of color centers and guide light to propagate.Typical scheme wherein comprises: electron beam exposure is combined with reactive ion etching and processes nano-pillar, and process waveguiding structure or optical microcavity structure etc. in conjunction with chemical attack and focused-ion-beam lithography after introducing damage, see document " Ion-beam-assisted lift-off technique forthree-dimensional micromachining of freestanding single-crystal diamond, Adv.Mater.172427 (2005) ".In this scheme, exposure is combined can realizes batch machining with reactive ion etching, and the single-photon source finished product structure obtained is complicated, is difficult to the requirement carrying out designing to meet types of applications neatly.In addition, optical microcavity structure is processed and is got up difficulty very greatly on single-crystal diamond, also not ideal enough to the enhancing effect of diamond single-photon source colour center single photon emission and collection.
A class scheme is also had to be adopt the method for FIB direct etching to prepare diamond packaged lens, when single-photon source colour center is accurately positioned at the sphere center position of packaged lens, launched single photon is eliminated in the total reflection of diamond and Air Interface in theory, and single photon Collection utilization efficiency is largely increased thus.It is simply direct that this method has technique, is applicable to very much the feature of single prototype experiment, has important practice significance to the development of the stable single-photon source based on diamond colour center and some basic research of quantum information related to this and quantum physics.But the limited precision of FIB direct etching, the single photon Collection utilization efficiency of the diamond packaged lens prepared by this scheme is at present still not high, differs greatly with theoretical value.
Therefore, the current solution that can significantly improve simply again the single-photon source of single photon Collection utilization efficiency in the urgent need to a kind of manufacture craft.
Summary of the invention
The object of this invention is to provide the solution that a kind of manufacture craft can significantly improve simply again the single-photon source of single photon Collection utilization efficiency.
For achieving the above object, the invention provides a kind of preparation method of the lens for the collection of colour center single photon, comprise the following steps:
1) in diamond bulk, locate the position of a colour center;
2) many group annulus particle bundle pattern groups are used, at the described diamond bulk surface etch fan-shaped spherical surface that to go out with described colour center be the centre of sphere, the ring heart wherein often organizing each annulus particle bundle pattern in annulus particle bundle pattern groups staggers, the inner radii of each annulus particle bundle pattern is equal, and the ring heart of each annulus particle bundle pattern is evenly distributed on one circumferentially, the internal diameter of the annulus particle bundle pattern of each group annulus particle bundle pattern groups progressively reduces until level off to 0.
Compared with prior art, the present invention has following technique effect:
1, the present invention can significantly improve the single photon Collection utilization efficiency of diamond single-photon source.
2, manufacture craft of the present invention is simple.
3, the present invention when the limited precision of FIB process equipment, can make the profile of diamond packaged lens more level and smooth, makes its single photon Collection utilization efficiency more close to theoretical value.
Accompanying drawing explanation
Fig. 1 a ~ f shows in one embodiment of the invention for processing the schematic diagram of the different phase of diamond packaged lens in the preparation method of the diamond packaged lens of single-photon source; Wherein Fig. 1 a ~ c is schematic perspective view, and Fig. 1 d ~ f is side elevational cross-section schematic diagram;
Fig. 2 shows the schematic top plan view making cross alignment mark in one embodiment of the invention on diamond bulk surface;
Fig. 3 shows in one embodiment of the invention by the schematic top plan view of laser scanning co-focusing fluorescence microscopy to colour center;
Fig. 4 shows in one embodiment of the invention the subpoint at diamond surface of colour center under state of overlooking relative to the schematic diagram of the offset vector of described alignment mark;
Fig. 5 shows in one embodiment of the invention and makes the schematic top plan view of aiming at annulus on diamond bulk surface;
Fig. 6 to show in one embodiment of the invention under state of overlooking the subpoint of colour center on diamond bulk surface relative to the schematic diagram of the offset vector of the described aligning annulus ring heart;
Fig. 7 shows the schematic top plan view of the cannelure in one embodiment of the invention;
Fig. 8 shows in one embodiment of the invention and repaiies with first annulus particle bundle pattern the schematic diagram carving cylindrical structural top;
Fig. 9 shows in one embodiment of the invention and repaiies with second annulus particle bundle pattern the schematic diagram carving cylindrical structural top;
Figure 10 shows the schematic top plan view at the annulus particle bundle pattern groups etching cylindrical structural top of the superposition be made up of 3 annulus particle bundle patterns;
Figure 11 shows the schematic top plan view at the annulus particle bundle pattern groups etching cylindrical structural top of the superposition be made up of 4 annulus particle bundle patterns;
Figure 12 shows the photo in each stage in actual according to an embodiment of the invention etching packaged lens process example.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention will be further described.
According to one embodiment of present invention, provide a kind of preparation method of the diamond packaged lens for single-photon source, comprise the steps that (Fig. 1 a ~ f shows the schematic diagram processing the different phase of diamond packaged lens in the preparation method for the diamond packaged lens of single-photon source, step S1 below corresponds to Fig. 1 a, step S2 corresponds to Fig. 1 b, step S3 and corresponds to Fig. 1 c, step S4 to S6 corresponding to Fig. 1 d, step S7 corresponds to Fig. 1 e, step S8 and corresponds to Fig. 1 f):
Step S1: with reference to figure 1a, gets the diamond bulk 1 that at least has a polished surface, at polished surface (hereinafter referred to as surface) the upper making alignment mark 2 of this diamond bulk.Alignment mark 2 type can be cross (as shown in Figure 2), also can be other form that can complete two-dimensional localization.The preparation method of alignment mark 2 comprises the chemical vapour deposition (CVD) of FIB induction, or focused-ion-beam lithography is directly write, or beamwriter lithography, or optical lithography.
Step S2: with reference to figure 1b, observe the colour center 3 of described diamond bulk, determine the offset vector of the described colour center 3 that the observes upright projection point (hereinafter by upright projection point referred to as subpoint) on described diamond bulk surface relative to described alignment mark.In this step, laser scanning co-focusing fluorescence microscope can be adopted to find diamond single-photon source colour center, and then obtain colour center apart from the distance of diamond surface, i.e. the colour center degree of depth, and colour center at the subpoint of diamond surface relative to the offset vector of described alignment mark.Fig. 3 shows by the laser scanning co-focusing fluorescence microscopy schematic top plan view to colour center, and Fig. 4 shows the subpoint at diamond surface of colour center under the state of overlooking relative to the offset vector of described alignment mark.
Step S3: with reference to figure 1c, is determining that conductive metal layer 4 is prepared on diamond bulk 1 surface of single-photon source colour center position.Conductive metal layer 4 can absorb the excess charge in focused-ion-beam lithography process, prevents charge accumulated caused by adamantine weak inductive from affecting the etching effect of packaged lens.The preparation of conductive metal layer can adopt electron beam evaporation or thermal evaporation or magnetron sputtering or laser-induced deposition method, and the thickness of conductive metal layer is greater than 10nm.In a preferred embodiment, the diamond fritter completing colour center location position is put into acetone, ethanol successively, each five minutes of deionized water for ultrasonic cleaning, then dries up with nitrogen.Thermal evaporation means are utilized to deposit the thick golden film of 30nm at the diamond surface cleaned up.In addition, have with charging neutrality device in some Focused Ion Beam instrument, when therefore using the Focused Ion Beam instrument with charging neutrality device, metal cladding prevents the step of charge accumulated (step S3) from can save.
Step S4: using the subpoint of described colour center on described diamond bulk surface as the ring heart, be d from the described diamond bulk surface etch degree of depth
0cannelure 8, the internal diameter (referring to the diameter of inner ring 8a in this cannelure top view) of this cannelure is for described colour center is apart from the twice of the distance on described diamond bulk surface, described cannelure 8 is separated out one for making the embryonic knob structure of hemispherical lens in diamond, and in the present embodiment, embryonic knob structure is cylindrical structural.Fig. 7 shows the schematic top plan view of cannelure.The external diameter 8b of cannelure can be arranged as required flexibly.In the present embodiment, this cannelure uses FIB to etch.
Step S5: from described diamond bulk surface, i-th layer of etching is carried out to current embryonic knob structure by the annulus particle bundle pattern of one group of superposition, i be greater than 0 integer.Every one deck is etched on basis that front one deck etches the new embryonic knob structure formed and carries out, the profile of the upper surface of the embryonic knob structure of the 1st layer of etching is circular, the profile of the embryonic knob structure that all the other each layers etch is sub-circular, for convenience of describing, hereinafter all sub-circulars are all described according to circle.
With reference to Figure 10,11, in i-th layer of etching, the ring heart of each described annulus particle bundle pattern all staggers the center of circle of (namely slightly departing from) described embryonic knob structure upper surface profile, the central point (i.e. the ring heart) of each annulus particle bundle pattern of i-th layer of etching is evenly distributed on one circumferentially, this circumference is around the center of circle of described embryonic knob structure upper surface profile, and the central point of each annulus particle bundle pattern of i-th layer of etching is equal with the distance staggered in the center of circle of embryonic knob structure upper surface profile.The inner radii of each described annulus particle bundle pattern is consistent with the radius of described embryonic knob structure upper surface profile, and outer radii is then greater than the radius of initial embryonic knob structure upper surface profile, and etching depth is d
i, after i-th layer of etching, the reduced radius of the upper surface profile of embryonic knob structure, becomes the embryonic knob structure of lower one deck etching.According to one embodiment of present invention, initial embryonic knob structure is cylindrical structural, and it becomes the embryonic knob structure of truncated cone-shaped after the 1st layer of etching, and in the etching of follow-up every one deck, embryonic knob structure is truncated cone-shaped.
Fig. 8 shows first annulus particle bundle pattern in certain one deck etching and repaiies the schematic diagram carving embryo structural top.Can find out, in this step, the ring heart of annulus particle bundle pattern 9 departs from the center of circle of the circle 10 of described embryo body structure surface all slightly, the radius of annulus particle bundle pattern inner ring 9a is consistent with the radius of the circle 10 of embryo body structure surface, make the etch areas 11 of embryo structural top in crescent, this meniscate narrow district is easily formed little Bing Xiangkuan district, inclined-plane by ion beam grinding and expands, when the annulus particle bundle pattern etch superposed with a group, crescent moon both sides constantly have new inclined-plane to be formed, thus make the side of the truncated cone-shaped structure of gained level and smooth, the side step problem (this problem will describe in detail hereinafter) that tradition occurs based on annulus particle beams pattern etch mode can be prevented like this.After repair cylindrical structural top at quarter with first annulus particle bundle pattern, stagger the ring heart, continue to repair with identical annulus particle bundle pattern to carve cylindrical structural top, Fig. 9 shows second annulus particle bundle pattern in the layer etching shown in Fig. 8 and repaiies the schematic diagram carving cylindrical structural top.The continuous like this ring heart that staggers, repaiies with identical annulus particle bundle pattern and carves cylindrical structural top, complete the etching of this group annulus particle bundle pattern.The annulus particle bundle pattern number of the annulus particle bundle pattern groups of the superposition that the ring heart staggers can be determined as required.Figure 10 shows the schematic top plan view at the annulus particle bundle pattern groups etching cylindrical structural top of the superposition be made up of 3 annulus particle bundle patterns.Figure 11 shows the schematic top plan view at the annulus particle bundle pattern groups etching cylindrical structural top of the superposition be made up of 4 annulus particle bundle patterns.Can find out, because the ring heart movement locus of each annulus particle bundle pattern of annulus particle bundle pattern groups is circle-shaped, the profile 10a at the cylindrical structural top after being etched, while area reduces, still roughly remains circle.In the present embodiment, annulus particle bundle pattern is circular scanning FIB.Scanning focused ion beam is that FIB scans default whole annular region by the mode of (or from outer ring to inner ring) from inner ring to outer ring.The bundle spot of scanning focused ion beam is very little, is covered the toroidal etching region of presetting by scanning, is more suitable for the modified etching that etching depth is less like this, is conducive to impelling the side of the truncated cone-shaped structure of gained more level and smooth.
Step S6: repeat step S5 and the radius of described truncated cone-shaped body structure surface profile is progressively reduced until level off to 0.In the etching to embryonic knob structure, the edge of annulus particle bundle pattern groups to embryo body structure surface modifies, and makes the reduced radius of embryonic knob structure upper surface profile.Along with reducing of embryonic knob structure upper surface profile radius, the inner radii of the annulus particle bundle pattern of each group superposition also progressively reduces, and finally levels off to 0.Wherein, the step-length preferably 0.5 to 1.5 microns that reduces of the inner radii of annulus particle bundle pattern of adjacent sets superposition.
Further, total etching depth in above-mentioned steps
equal the distance of described colour center apart from described diamond bulk surface, wherein k
irepresent the number of the annulus particle bundle pattern being used for i-th layer of etching, n represents the number of plies of last group annulus particle bundle pattern.In step S7 ~ S9, annulus particle bundle pattern outer radii is greater than the radius of a circle on initial cylindrical structural surface, can ensure that the annular groove bottom of step S6 is continued etching, the degree of depth of cannelure is increased, the etching of matching step S8, makes the degree of depth of cannelure just equal the distance of colour center to diamond bulk surface.In a preferred embodiment, annulus particle bundle pattern outer radii is more than 2 times of the radius of a circle on initial cylindrical structural surface, the lateral wall of cannelure can be made so spaced apart with middle hemispherical lens, be beneficial to the single photon that colour center sends and effectively collected by after packaged lens outgoing.
D
0selection relevant to the actual etching depth of follow-up modification etching process, etch complete hemisphere lens time, d
0preferred colour center apart from described diamond bulk surface distance 3/5 to 4/5 numerical value.For the number k of the annulus particle bundle pattern of i-th layer of etching
ipreferably 3 ~ 7.Usually required etching half radius of a ball is larger, k
ivalue larger (when half radius of a ball is more than 10 microns, k
iget more than 5), more annulus can carry out finer modification etching, and for the hemisphere of minor radius, 3 ~ 4 annulars superpose.The etching depth of each described annulus particle bundle pattern of i-th layer of etching is d
ipreferred colour center apart from described diamond bulk surface distance 1/300 ~ 1/100, concrete value is by k
ivalue, hemisphere radius value determine, radius is larger, and the modification etching number of plies is more, d
ibe worth less.
In the step S5 of the present embodiment, the etching of every layer is staggered by the ring heart and multiple ion beam annulus of evenly superposition form.For the many annulus superposition lithographic methods that the ring heart staggers, first with the radius of target hemisphere for inside radius etches a cannelure, the size of groove width and the degree of depth according to target hemisphere sets.And then by multiple annulus symmetry superposition etching further, by the staggered superposition of actual etch areas, existing column construction is repaiied and is carved into hemisphere curved surface.On the cylindricality basis of tentatively carving, the ring heart staggers in the etching mode of the multiple ion beam annulus evenly superposed, repair the etch areas at quarter to embryonic knob structure upper surface is crescent at every turn, meniscate narrow district is easily formed little Bing Xiangkuan district, inclined-plane expansion by ion beam grinding constantly has new inclined-plane to be formed in crescent moon both sides simultaneously, thus make the surface of final hemispherical dome structure more level and smooth, prevent photon to be reflected back toward in diamond body, and then improve the single photon Collection utilization efficiency of packaged lens.
In an example, etch packaged lens with the following method: in focused ion beam system, with colour center position for the centre of sphere, the hemisphere that lithography radius is 5 microns.First to do inside radius be 5 microns of outer radius is that the annulus of 6.5 microns etches 3.5 micrometer depth with 5000pA ion beam current, the annulus symmetry being 10 microns by four outer radius again staggers 0.2 micron, adopt the pattern of pattern processing one by one, etch further with this non-concentric stacked system 3000pA ion beam current.In the process of etching, inner ring, the outer radii of four annulus are consistent, and annulus inner radii is set and is progressively decreased to 1 micron from 5 microns, the inner radii decrease of adjacent two steps (often step comprises one group of totally 4 annulus) is selected between 0.5 ~ 1.5 micron, the degree of depth that each annulus etches at every turn is 0.2 micron, so repair gradually and carve semi-spherical shape, obtain packaged lens.Figure 12 illustrates the photo in each stage of this example in reality etching packaged lens process.
After completing steps S6, continue to perform following step.
Step S7: with reference to figure 1d, Fig. 1 e, removes the amorphous layer 5 that focused-ion-beam lithography is introduced on packaged lens surface, obtains the packaged lens covered without amorphous layer.The process of focused-ion-beam lithography packaged lens can be about the amorphous layer 5 of tens nanometers at packaged lens surface introducing thickness.In an embodiment, adopt reactive ion etching method to remove the amorphous layer 5 on this semiglobe 6 surface, obtain hemispherical lens 7.Etching gas used is with O
2be main, flow is 30sccm, mixes a small amount of CHF
3, flow is 3sccm, gas pressure intensity 10Pa, and etching power is 100W, carries out 20 circulations, obtain the packaged lens not having amorphous layer to cover to etch 1 minute interval mode of 1 minute.In other embodiments, also can adopt the dry etching means of reactive ion etching, or adopt and the diamond being carved with packaged lens is placed in the mode that perchloric acid, the concentrated sulfuric acid and red fuming nitric acid (RFNA) boil erosion by the sour mixed solution wet method that 1:1:1 proportioning is prepared and removes amorphous layer.
Step S8: with reference to figure 1f, is the excess charge absorbed in focused-ion-beam lithography process and the conductive metal layer prepared in removal step S5, obtains finished product.In an embodiment, the diamond fritter being etched with packaged lens is placed in golden etchant solution 30 seconds, removes 30 nano-gold film that diamond surface covers.
In prior art, conventional focused ion beam equipment can both provide internal-and external diameter adjustable and the ring focusing ion beam that etching depth is adjustable.The lithographic method of traditional hemispherical dome structure is concentric ring etching method, specifically: clamping rings center in process, reduces the internal-and external diameter of ion beam annulus gradually, changes etching depth simultaneously, progressively etch hemispherical dome structure with FIB.But because equipment precision is limited, the surface of the hemispherical dome structure that this method etches is actually step-like.Photon runs into this step-like surface and is easily reflected back toward in diamond body, causes the single photon Collection utilization efficiency of packaged lens on the low side.And in the present invention, adopt the ring heart to stagger the etching mode of multiple ion beam annulus of evenly superposition, repair the etch areas at quarter to embryonic knob structure upper surface is crescent at every turn, meniscate narrow district is easily formed little Bing Xiangkuan district, inclined-plane expansion by ion beam grinding constantly has new inclined-plane to be formed in crescent moon both sides simultaneously, thus make the surface of final hemispherical dome structure more level and smooth, prevent photon to be reflected back toward in diamond body, and then improve the single photon Collection utilization efficiency of packaged lens.
According to another embodiment of the invention, in order to accurately locate colour center further, after step S2 completes Primary Location, continue to perform step S21, S22.
Step S21: the subpoint on described diamond bulk surface is relative to the offset vector of described alignment mark according to the described alignment mark 2 of step S1 gained and the described colour center 3 of step S2 gained, locating described colour center at the subpoint on described diamond bulk surface and with it is that the ring heart (i.e. the center of annular) etching aims at annulus 3a, as shown in Figure 5.Aim at annulus 3a and only play alignment effect, so only need to etch the more shallow degree of depth (such as 100nm), can in laser scanning co-focusing fluorescence microscope the clear lines observing this aligning annulus.
Step S22: with reference to figure 6, again observe the colour center 3 of described diamond bulk, determine that the described colour center 3 that the observes subpoint on diamond bulk surface determines the distance of described colour center apart from described diamond bulk surface relative to the offset vector of described aligning annulus ring heart 3b.In this step, colour center can be measured depart from the position aiming at the annulus ring heart under laser scanning co-focusing microscope, thus more accurate secondary location is carried out to colour center.After completing secondary location, the result according to secondary location performs step S3 ~ S8, completes the making of hemispherical lens.
In above-described embodiment, adopt symmetry stagger annulus focused-ion-beam lithography method processing hemisphere, can realize the controlled of structure and morphology under nanoscale with can design directly writes processing, and realize the real-time Detection and adjustment of pattern, there is the flexibility of height and the machining accuracy of nanoscale, make the surface of hemispherical dome structure more level and smooth, prevent photon to be reflected back toward in diamond body, and then improve the single photon Collection utilization efficiency of packaged lens.In addition, preparation mark is first on the diamond successively locates single-photon source colour center, then secondary location is being carried out based on the result of just locating, diamond colour center single-photon source can be located more exactly, make colour center single-photon source accurately be positioned at the centre of sphere of prepared hemispherical lens, thus improve the single photon Collection utilization efficiency of packaged lens further.Adopt the amorphous layer in dry method or wet etching removal packaged lens, can further improve the characteristics of luminescence of diamond single-photon source.
Experiment shows, in the packaged lens of processing by the scheme of above-described embodiment, relative to the former diamond bulk only doing surface finish process, the raising of single-photon source luminescence of color centers collection efficiency reaches more than 10 times, and the signal to noise ratio of collecting single photon is also brought up to be greater than 10 from being less than 4.
In above-described embodiment, etch complete hemispherical lens in a diamond, be conducive to so farthest improving single photon collection efficiency and signal to noise ratio, but those skilled in the art should be readily appreciated that, in other embodiments, also a part of spherical surface (i.e. fan-shaped spherical surface) of hemispherical lens can only be etched, as long as ensure that this spherical surface is level and smooth, and spherical surface each point to the distance of colour center equal or approximately equal, single photon collection efficiency and signal to noise ratio can be improved to a certain extent, now step S4 can save, the annulus particle bundle pattern groups that such as can directly use the ring heart to stagger carries out modified etching to diamond bulk surface.Owing to not performing step S4, therefore etching object is diamond bulk surface, and annulus particle bundle pattern inner ring, outer radii are determined according to predetermined etching depth.Progressively reduce the internal diameter of annulus particle bundle pattern, the truncated cone-shaped structure of annulus particle bundle pattern groups to gained using many group ring hearts to stagger etches, finally can obtain required spherical surface, this spherical surface is level and smooth, and spherical surface each point to the distance of colour center equal or approximately equal.
It should be noted that, when needs process other curve form, the embryonic knob structure (such as truncated cone-shaped structure or cylindrical structural) of the annulus particle bundle pattern groups that the ring heart also can be used to stagger to raw-material polished surface or preprocessing etches.By progressively adjusting the internal diameter of annular particle beams pattern, the truncated cone-shaped structure of annulus particle bundle pattern groups to gained using many group ring hearts to stagger etches, finally can obtain required convex curve surface shape, by progressively adjusting the external diameter of annular particle beams pattern, the truncated cone-shaped structure of annulus particle bundle pattern groups to gained using many group ring hearts to stagger etches, and finally can obtain required concave curve surface shape.
Finally it should be noted that, above embodiment is only in order to describe technical scheme of the present invention instead of to limit this technical method, the present invention can extend in application other amendment, change, application and embodiment, and therefore think that all such amendments, change, application, embodiment are all in spirit of the present invention and teachings.
Claims (12)
1., for a preparation method for the lens of colour center single photon collection, comprise the following steps:
1) in diamond bulk, locate the position of a colour center;
2) many group annulus particle bundle pattern groups are used, at the described diamond bulk surface etch fan-shaped spherical surface that to go out with described colour center be the centre of sphere, wherein, often organizing in annulus particle bundle pattern groups, the ring heart of each annulus particle bundle pattern staggers, the inner radii of each annulus particle bundle pattern is equal, and the ring heart of each annulus particle bundle pattern is evenly distributed on one circumferentially, and the internal diameter of the annulus particle bundle pattern of each group annulus particle bundle pattern groups progressively reduces until level off to 0.
2. the lens preparation method collected for colour center single photon according to claim 1, it is characterized in that, described step 2) also comprise: first produce embryonic knob structure on described diamond bulk surface, then use many group annulus particle bundle pattern groups to etch described embryonic knob structure and obtain the fan-shaped spherical surface that described colour center is the centre of sphere.
3. the lens preparation method collected for colour center single photon according to claim 2, is characterized in that, described step 2) comprise substep:
21) using the subpoint of described colour center on described diamond bulk surface as the ring heart, be d from the described diamond bulk surface etch degree of depth
0cannelure, the internal diameter of this cannelure is the twice of described colour center apart from the distance on described diamond bulk surface, and described cannelure isolates a cylindrical structural as described embryonic knob structure;
22) from described diamond bulk surface, the 1st layer of etching is carried out to described cylindrical structural by one group of annulus particle bundle pattern, the ring heart of each described annulus particle bundle pattern departs from the center of circle of the circle on described cylindrical structural surface all slightly, inner radii is consistent with the radius of a circle on described cylindrical structural surface, and etching depth is d
1particle beams pattern width is greater than the deviation value of this annulus particle bundle pattern inner ring relative to the circle on described cylindrical structural surface, the ring heart for each annulus particle bundle pattern of the 1st layer of etching is evenly distributed on one circumferentially, this circumference is centered around around the center of circle of the circle of described truncated cone-shaped body structure surface, and after the 1st layer of etching, described cylindrical structural is etched to truncated cone-shaped structure;
23) from described diamond bulk surface, i-th layer of etching is carried out to current described truncated cone-shaped structure by one group of annulus particle bundle pattern, wherein i be greater than 0 integer, the ring heart of each described annulus particle bundle pattern departs from the center of circle of the circle of described truncated cone-shaped body structure surface all slightly, inner radii is consistent with the radius of a circle of described truncated cone-shaped body structure surface, and etching depth is d
iparticle beams pattern width is greater than the deviation value of this annulus particle bundle pattern inner ring relative to the circle of described truncated cone-shaped body structure surface, the ring heart for each annulus particle bundle pattern of i-th layer of etching is evenly distributed on one circumferentially, and this circumference is centered around around the center of circle of the circle of described truncated cone-shaped body structure surface;
24) step 23 is repeated) radius of a circle of described truncated cone-shaped body structure surface is progressively reduced until level off to 0.
4. the lens preparation method collected for colour center single photon according to claim 3, is characterized in that, described step 21) to 24) in, total etching depth
equal the distance of described colour center apart from described diamond bulk surface, make obtained fan-shaped spherical surface be semispherical surface, wherein k
irepresent the number of the annulus particle bundle pattern being used for i-th layer of etching, n represents the number of plies of last group annulus particle bundle pattern.
5. the lens preparation method collected for colour center single photon according to claim 3, is characterized in that, described step 21) in, use focused-ion-beam lithography cannelure; Described step 22), 23), 24) in, described annulus particle bundle pattern is circular scanning FIB.
6. the lens preparation method collected for colour center single photon according to any one of claim 1 to 5, it is characterized in that, described step 1) comprises substep:
11) alignment mark is made on the surface at diamond bulk;
12) observe the colour center of described diamond bulk, determine the offset vector of the described colour center that the observes subpoint on described diamond bulk surface relative to described alignment mark.
7. the lens preparation method collected for colour center single photon according to claim 6, it is characterized in that, described step 1) also comprises substep:
13) according to the described alignment mark of step 11) gained and the described colour center of step 12) gained, the subpoint on described diamond bulk surface, relative to the offset vector of described alignment mark, locates described colour center at the subpoint on described diamond bulk surface and with it for ring heart etching aims at annulus;
14) again observe the colour center of described diamond bulk, determine the offset vector of the subpoint on the described diamond bulk surface observed relative to the described aligning annulus ring heart; Determine the distance of described colour center apart from described diamond bulk surface;
Described step 2) in, locate the subpoint on described diamond bulk surface relative to the offset vector of the described aligning annulus ring heart based on the subpoint on the described diamond bulk surface of the described aligning annulus ring heart and step 14) gained.
8. the lens preparation method collected for colour center single photon according to claim 7, is characterized in that, in described step 12) and step 14), adopts the colour center of diamond bulk described in laser scanning co-focusing microscope systematic observation.
9. the lens preparation method collected for colour center single photon according to claim 5, is characterized in that, described step 2) in, d
0for described colour center apart from described diamond bulk surface distance 3/5 to 4/5.
10. the lens preparation method collected for colour center single photon according to claim 9, is characterized in that, for the number k of the annulus particle bundle pattern of i-th layer of etching
ibe 3 ~ 7.
The 11. lens preparation methods collected for colour center single photon according to claim 10, it is characterized in that, the etching depth of each described annulus particle bundle pattern of i-th layer of etching is d
ifor colour center apart from described diamond bulk surface distance 1/300 ~ 1/100.
The 12. lens preparation methods collected for colour center single photon according to claim 3, is characterized in that, described step 21) in, be d from the described diamond bulk surface etch degree of depth
0cannelure before, prepare conductive metal layer at described diamond surface;
Described step 24) after, remove described conductive metal layer.
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