CN105428292A - Method for aligning grating mask to crystal surface of silicon wafer {111} - Google Patents
Method for aligning grating mask to crystal surface of silicon wafer {111} Download PDFInfo
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- CN105428292A CN105428292A CN201510793828.1A CN201510793828A CN105428292A CN 105428292 A CN105428292 A CN 105428292A CN 201510793828 A CN201510793828 A CN 201510793828A CN 105428292 A CN105428292 A CN 105428292A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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Abstract
The invention provides a method for aligning a grating mask to a crystal surface of a silicon wafer {111}. The method comprises the following steps of: A) making a plurality of alignment mark patterns with grating diffraction characteristics on the silicon wafer, wherein each alignment mark pattern has two long edges parallel to a positioning edge of the silicon wafer; B) performing wet etching on the silicon wafer obtained in the step A) to enable the long edges of the alignment mark pattern to be ended along the crystal surface of the silicon wafer {111} to obtain a silicon wafer with a plurality of first alignment mark patterns; and C) positioning a reference line representing the grating mask, irradiating the long edges of the first alignment mark patterns by laser to obtain diffraction spots of the long edges of the first alignment mark patterns, and coinciding the reference line with the diffraction spots. According to the alignment method, the crystal surface of the silicon wafer {111} can be positioned in a zero-error manner without the need for microscopic observation and comparison by only making the alignment mark patterns once, and the diffraction characteristics of the alignment mark patterns are utilized to perform representation; and the total alignment error is less than or equal to +/-0.016 degrees.
Description
Technical field
The present invention relates to the Micrometer-Nanometer Processing Technology field that grating mask makes, particularly relate to a kind of grating mask and the silicon chip { alignment methods of 111} crystal face.
Background technology
High Performance X-ray transmission grating has rigid demand at key areas such as inertial confinement fusion (ICF) and astronomical observations, it has the feature of high linear density and high-diffraction efficiency, requires that grating grooved keeps high-aspect-ratio and smooth diffraction surfaces.Anisotropic wet etch is important technology prepared by silica-based transmission grating, and wherein { alignment precision of 111} crystal face determines the speed of lateral etching and the roughness of sidewall for grating mask and silicon chip.Alignment precision is higher, and sidewall is more smooth, and lateral etch rate is less, and for the silicon grating of high-aspect-ratio, process tolerance is also higher.
At present, { alignment methods of 111} crystal face adopts fan-shaped or circle marker to etch { 111} crystal face, then aim at grating mask with characterizing method with corresponding location usually for grating mask and silicon chip.
Nanometer technology laboratory, MIT space utilizes fan maker beacon wet etching method on <110> silicon chip, to locate vertical { the 111} crystal face of the minimum rectangular strip of lateral etching width in conjunction with electron microscope, pass through Position-Sensitive Detector again, interference fringe is aimed at it, completes mask manufacture.This alignment methods, is only applicable to complicated scanning light beam interference system, and because { many rectangular strip lateral etching similar width of 111} crystal face are difficult to differentiate, and make that vertical { position error of 111} crystal face, at about 0.1 °, accounts for 90% of overall error near vertical.Another kind of alignment methods is vertical { the 111} crystal face utilizing fan maker beacon wet etching method to orient <110> silicon chip, and on silicon chip, produce reference grating in parallel, make in the optical path to aim at interference fringe with reference to grating.The method obtains higher alignment precision, not for particular system, comparatively pervasive.But the fan-shaped bar that still employing microscope searching lateral etching width is minimum is located 111} crystal face, artificial position error accounts for 75% of overall error; And used Twi-lithography to complete the making of reference grating, length consuming time, process is loaded down with trivial details, and the area that registration mark takies monocrystalline silicon is large, and technique has to be optimized.
{ method of 111} crystal face is also widely used in the grating mask making of large period to utilize circle marker wet etching to go out hexagon location, but be limited to the size of circle marker, the method error is larger at about 0.2 °, is not suitable for the making of high linear density transmission grating.
In existing alignment methods, are all the thinkings adopting three-step-march, that is: the first step-crystal orientation, location, the marks such as utilization is circular or fan-shaped etch 111} crystal face, then the lines representing crystal orientation are found by means such as microscopes, and be located into vertical { 111} crystal face; Second step-sign crystal orientation, { 111} crystal face, makes reference grating in parallel or direct scan tracing, by { 111} crystal face characterizes to utilize these lines to represent; Three step-mask alignment, by characterizing, { the reference grating of 111} crystal face or single line are aimed at the interference fringe etc. that represent grating mask direction, thus complete grating mask and { aiming at of 111} crystal face.In above-mentioned steps, crystal orientation, location is the main source of error, accounts for more than 70% of overall error, poor operability, needs to utilize microscope repeatedly to find and compare, waste time and energy, and precision is difficult to improve.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of superhigh precision grating mask and the silicon chip { alignment methods of 111} crystal face.
In view of this, this application provides a kind of grating mask and silicon chip the alignment methods of 111} crystal face, comprises the following steps:
A), silicon chip makes multiple registration mark figures with diffraction properties, and each registration mark figure has the two long limits parallel with the gulde edge of described silicon chip;
B), by steps A) silicon chip that obtains carries out wet etching, make the long edge of described registration mark figure silicon chip { 111} crystal face ends, and obtains the silicon chip with multiple first registration mark figure;
C), location characterizes the datum line of grating mask, adopts laser to irradiate the long limit of described multiple first registration mark figure, obtains the diffraction spot on the long limit of described multiple first registration mark figure, overlapped by described datum line with described diffraction spot.
Preferably, described registration mark figure is rectangle.
Preferably, the long limit of described rectangle is 50 ~ 1000 μm, and width is 10 ~ 50 μm.
Preferably, the quantity of described registration mark figure is greater than 20, and the gross area is less than 1mm
2.
Preferably, described silicon chip is <110> silicon chip or <100> silicon chip.
Preferably, the time of described wet etching is less than 4h.
Preferably, the etching liquid of described wet etching is anisotropic etching liquid.
This application provides a kind of grating mask and the silicon chip { method that 111} crystal face is aimed at, first it is the registration mark figure with diffraction properties making one piece of small size on silicon chip, along with the carrying out of wet etching, two long limits of registration mark figure can strictly along monocrystalline silicon { 111} crystal face etching cut-off, until etched, two long limits of whole registration mark figure tilt completely, and show the diffraction properties made new advances, utilize the diffraction characteristic of registration mark figure after wet etching, directly can characterize { 111} crystal face, the diffraction spot of registration mark figure is aimed at the localization criteria line characterizing mask grating mask direction, thus complete { the high precision alignment of 111} crystal face and grating mask.This alignment methods only needs making registration mark figure, after the wet etching of short time, compares without the need to microscopic examination, just can zero error location { 111} crystal face, and utilize its diffraction characteristic to characterize.Result of the test shows, the alignment methods that the application provides aims at overall error≤± 0.016 °.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of rectangle alignment criteria of the present invention;
Fig. 2 is the wet etching structure evolution schematic diagram of rectangle registration mark of the present invention;
Fig. 3 is the Making programme figure of rectangle registration mark of the present invention;
Fig. 4 is the schematic diagram that rectangle registration mark of the present invention is aimed at grating mask.
Embodiment
In order to understand the present invention further, below in conjunction with embodiment, the preferred embodiment of the invention is described, but should be appreciated that these describe just for further illustrating the features and advantages of the present invention, instead of limiting to the claimed invention.
The embodiment of the invention discloses a kind of grating mask and silicon chip the alignment methods of 111} crystal face, comprises the following steps:
A), silicon chip makes multiple registration mark figures with diffraction properties, and each registration mark figure has the two long limits parallel with the gulde edge of described silicon chip;
B), by steps A) silicon chip that obtains carries out wet etching, make the long edge of described registration mark figure silicon chip { 111} crystal face ends, and obtains the silicon chip with multiple first registration mark figure;
C), location characterizes the datum line of grating mask, adopts laser to irradiate the long limit of described multiple first registration mark figure, obtains the diffraction spot on the long limit of described multiple first registration mark figure, overlapped by described datum line with described diffraction spot.
This application provides a kind of grating mask and the silicon chip { method that 111} crystal face is aimed at, first it is the registration mark figure with diffraction properties making one piece of small size on silicon chip, along with the carrying out of wet etching, two long limits of registration mark figure can strictly along monocrystalline silicon { 111} crystal face etching cut-off, until etched, two long limits of whole registration mark figure tilt completely, and show the diffraction properties made new advances, utilize the diffraction characteristic of registration mark figure after wet etching, directly can characterize { 111} crystal face, the diffraction spot of registration mark figure is aimed at the localization criteria line characterizing mask grating mask direction, thus complete { the high precision alignment of 111} crystal face and grating mask.This alignment methods only needs making registration mark figure, after the wet etching of short time, compares without the need to microscopic examination, just can { aligning overall error drops to minimum by 111} crystal face, and utilize its diffraction characteristic to characterize in zero error location.
The application is that { 111} crystal face realizes the making of grating mask by characterizing.At grating mask with { in the process that 111} crystal face is aimed at, first the application has made multiple registration mark figures with grating mask characteristic on silicon chip, and two long limits of single registration mark figure are parallel with the gulde edge of silicon chip; Namely the registration mark graphics class that the application makes is similar to rectangle, and just in this application, the minor face of rectangle can be straight line, also can be curve, not limit this application.Described in the application, registration mark figure is preferably rectangle.
As shown in Figure 1, Fig. 1 is the schematic diagram of rectangle registration mark of the present invention, and wherein, 1 is silicon chip, and 2 is the rectangle registration mark before wet etching, 3 for wet etching complete after rectangle registration mark, 4 is { the 111} crystal face in reality.
According to the present invention, the size of rectangle registration mark considers the wet etching time, makes angle of inclination and registration mark diffraction efficiency optimal design.Design principle is: (1) lateral etching width is less than the width of single rectangle; (2) length of rectangle and quantitative commitments diffraction spot naked eyes visible; (3) ensure that the wet etching time is as far as possible short.Above principle conditions each other, and the wet etching time is preferably less than 4h, and the length of single rectangle is preferably 50 ~ 1000 microns, and width is preferably 10 ~ 50 microns, and the total quantity of rectangle is greater than 20; The registration mark gross area is less than 1mm
2, the optional position of silicon chip can be produced on, greatly improve effective usable floor area of silicon chip.
After registration mark graphic making completes, silicon chip is then carried out wet etching by the application, make the long edge of described registration mark figure silicon chip 111} crystal face end, obtain the silicon chip with multiple first registration mark figure.Described in the application, the etching liquid of wet etching is preferably anisotropic etching liquid, is more preferably the KOH solution of 50wt%.The application's registration mark figure wet etching structure evolution schematic diagram as shown in Figure 2, W in Fig. 2
0for the width of rectangle registration mark, L is the length of rectangle registration mark, and W is the overall width of rectangle registration mark, and θ is the angle that before and after wet etching, rectangular strip tilts, y
1for nearly { the lateral etching width of 111} crystal face end, y
2for { the lateral etching width of 111} crystal face end, y far away
1t1, y
1t2be respectively that near { 111} crystal face end is at time t
1, t
2time lateral etching width, y
2t1, y
2t2be respectively that far away { 111} crystal face end is at time t
1, t
2time lateral etching width.As shown in Figure 2, during wet etching, the left and right etching width of single rectangular mask top (intersection) there will be difference.Concrete process is:
From the mechanism of anisotropic wet etch, nearly vertical { the lateral etching width y of 111} crystal face end
1equal vertical the lateral etching width of 111} crystal face, is expressed as:
y
1＝v(111)t；
Vertical { the lateral etching width y of 111} crystal face end far away
2be expressed as:
y
2＝v(θ)t，
Wherein, θ is rectangular strip limit and the vertical { misalignment angle of 111} crystal face.In actual fabrication, { the angular deviation θ of 111} crystal face 4 is difficult to avoid for rectangular strip 2 and actual, v (111) < < v (θ), during anisotropic wet etch, the limit of rectangular strip can strictly along { 111} crystal face advances etching, along with the increase of time, etch { 111} crystal face constantly increases, until { 111} crystal face etches cut-off completely within the scope of rectangular strip.Now, define one with the new rectangle registration mark 3 of former rectangle registration mark 2 in θ angular slope.Accordingly, rectangle registration mark 3 shows the diffraction properties made new advances.
Fig. 3 is the flow chart before and after rectangle registration mark of the present invention etching, in figure, 5 is wet etching mask, 6 is silica-based, Fig. 3 a is the end view of rectangle registration mark before wet etching, Fig. 3 b is that figure cuts open in the end view of wet etching rectangle registration mark when completing and side-looking office, and Fig. 3 c is the end view of the rectangle registration mark removing mask after wet etching.
According to the present invention, obtain new there is the registration mark figure of Grating Properties after, the application then carries out { the alignment procedures of 111} crystal face and grating mask of registration mark profiles characteristic, namely location characterizes the datum line of grating mask, laser is adopted to irradiate the long limit of described multiple first registration mark figure, obtain the diffraction spot on the long limit of described multiple first registration mark figure, described datum line is overlapped with described diffraction spot.Fig. 4 is that rectangle registration mark of the present invention aims at schematic diagram with grating mask, and in figure, 7 is laser, and 8 is grating mask, and 9 is receiving screen, and 10 is characterize the position baseline in grating mask direction, and 11 is the diffraction pattern of rectangle registration mark 3.
In above process, first location characterizes the datum line of grating mask, namely the direction of grating mask is the direction of interference fringe, first the mask graph in the reference element in holographic light path (level crossing etc.) or ultraviolet photolithographic is utilized to orient the datum line in a sign grating mask direction, concrete operations are: adopt beam of laser to beat on the level crossing in holographic light path with multiple incidence angle, receiving screen draws a straight line be made up of reflection spot, and namely this straight line is the datum line characterizing grating mask direction; Or beat on the mask graph in ultraviolet photolithographic by beam of laser, receiving screen draws a straight line be made up of diffraction spot, namely this straight line is the datum line characterizing grating mask direction; Then it is made to occur the order of diffraction time incident for beam of laser rectangle registration mark; Adjustment comprises the silicon chip orientation of rectangle registration mark, the diffraction spot of registration mark is overlapped completely with the position baseline characterizing grating mask direction, so far, namely completes grating mask and silicon chip { aiming at of 111} crystal face.
In above-mentioned alignment procedures, the position error of alignment error from datum line and the alignment error of diffraction spot and datum line, its size depends on the resolution error Δ l that hot spot overlaps with datum line, and hot spot is to the distance D of reference element or silicon chip.Consider actual experiment, if Δ l=1mm, D >=5000mm, then the alignment error computing formula of rectangle registration mark and grating mask is as follows, as calculated total alignment error be less than or equal to ± 0.016 °.
Grating mask described in the application and silicon chip the alignment methods of 111} crystal face, for <110> silicon chip, the wet etching through a short time is located and characterizes vertical { 111} crystal face; Also can be used for <100> silicon chip, the wet etching through a short time is located and characterizes inclination { 111} crystal face; { aiming at of 111} crystal face, is also applicable in ultraviolet photolithographic, grid stroke bar and { aiming at of 111} crystal face on mask plate with silicon chip to be applicable to characterize in holographic lithography the interference fringe in grating mask direction.
The present invention is a kind of grating mask and silicon chip { the superhigh precision alignment methods of 111} crystal face, first on silicon chip 1, make the rectangle registration mark 2 with diffraction properties of one piece of small size, along with the carrying out of wet etching, four limits of rectangle can strictly along monocrystalline silicon { 111} crystal face etching cut-off, until etched, the limit of whole rectangle has tilted completely, and shows the diffraction properties made new advances, utilize the diffraction characteristic of rectangle registration mark 3, directly can characterize { 111} crystal face 4; The diffraction spot 11 of rectangle registration mark 3 is aimed at the position baseline 10 characterizing grating mask 8, thus completes { the high precision alignment of 111} crystal face 4 and grating mask 8.This alignment methods, only needs making rectangle registration mark, after the wet etching of short time, compares without the need to microscopic examination, just can zero error location { 111} crystal face, and utilize its diffraction characteristic to characterize.
The application's grating mask and silicon chip the alignment methods of 111} crystal face is specially:
(1) registration mark figure wet etching is utilized to locate and characterize { 111} crystal face;
Making registration mark figure at silicon chip 1 edge as rectangle 2, aligns, without required precision with the existing gulde edge of silicon chip in the long limit of rectangle as far as possible; Wet etching enough time, until the long limit of rectangular is completely strict with { 111} crystal face ends; Remove the wet etching mask 5 of registration mark, the rectangle registration mark 3 of silica-based 6 li is exposed completely.This step, { 111} crystal face achieves time-saving and efficiency, repeatably zero error location not need microscope searching to be similar to.
(2) grating mask is made to aim at rectangle registration mark
Namely the direction of grating mask 8 is the direction of interference fringe, first utilizes the mask graph in the reference element in holographic light path (level crossing etc.) or ultraviolet photolithographic to orient the datum line 10 in a sign grating mask direction; It is made by beam of laser 8 incident alignment mark 3 to occur the order of diffraction time; Adjustment comprises silicon chip 1 orientation of rectangle registration mark 3, the diffraction spot 11 of registration mark is overlapped completely with the position baseline 10 characterizing grating mask 8 direction, so far, namely completes grating mask 8 and silicon chip { aiming at of 111} crystal face 4.Result shows, and { total alignment error of 111} crystal face is ± 0.016 °, for the development of high linear density high-aspect-ratio grating provides strong technical support for grating mask of the present invention and silicon chip.
The alignment methods that the present invention adopts, only needs making rectangle registration mark, after the wet etching of short time, compare without the need to microscopic examination, just can { 111} crystal face, and utilize its diffraction characteristic to characterize, drops to minimum by aligning overall error in zero error location; The present invention preferably adopts rectangle registration mark, and figure is simple, and area can reach 1mm
2within, the optional position of silicon chip can be produced on, significantly increase effective usable floor area of silicon chip; Need with { grating mask of 111} crystal face high precision alignment is all applicable to being produced on <110> silicon chip, <100> silicon chip; To in holographic lithography or ultraviolet photolithographic, { aiming at of 111} crystal face is all applicable for grating mask and silicon chip; The alignment methods that then the application provides has universality.
In order to understand the present invention further, below in conjunction with embodiment, to grating mask provided by the invention and silicon chip, { alignment methods of 111} crystal face is described in detail, and protection scope of the present invention is not limited by the following examples.
Embodiment 1
For <110> silicon chip, the single rectangle width W of rectangle registration mark
0be 10 microns, length L is 100 microns, and rectangular strip quantity is 200, and the gross area of registration mark is 0.4mm
2, for interference fringe in holographic lithography and silicon chip { aiming at of 111} crystal face.The concrete steps of alignment methods comprise:
1. on silicon chip 1, make rectangle registration mark 2, and etch in the etching masks of resistance to wet method such as silicon nitride or silicon dioxide 5;
2. at 60 DEG C, wet etching 3 hours in 50wt%KOH solution, forms new rectangle registration mark 3 in silica-based 6, mask 5 is removed with HF solution or dry etching local, rectangle registration mark 3 is exposed completely, and so far, silicon chip { located by the zero error of 111} crystal face 4;
3., in the holographic light path built, the selected reference element representing grating mask 8 direction, adopts beam of laser 7 scanning reflection, and receiving screen 9 records a datum line 10;
4. the silicon chip 1 comprising rectangle registration mark 3 is placed on position to be exposed (temporarily shielding interference region, silicon chip is prevented to be exposed), with the incident rectangle registration mark 3 of laser 7, receiving screen 9 there will be a series of diffraction pattern 11, adjustment silicon chip 1, makes diffraction pattern 11 aim at datum line 10;
So far, grating mask 8 and silicon chip { having aimed at of 111} crystal face 4.
The method alignment error of the application derive from step 3. and 4. in the aiming at of the record of datum line 10 and diffraction pattern 11 and datum line 10, it depends on the resolution error Δ l that hot spot overlaps with datum line, and hot spot is to the distance D of reference element or silicon chip; Δ l depends on human eye resolution capability to a certain extent, can improve alignment precision, in the present embodiment by increasing D, get Δ l=1mm, D=5000mm, then the alignment error computing formula of rectangle registration mark and grating mask is as follows, and total alignment error is ± 0.016 ° as calculated.
Embodiment 2
For <110> silicon chip, the single rectangle width W of rectangle registration mark
0be 20 microns, length L is 200 microns, and rectangular strip quantity is 100, and the gross area of registration mark is 0.8mm
2, for interference fringe in holographic lithography and silicon chip { aiming at of 111} crystal face.
Carry out silicon chip the sign of 111} crystal face, and grating mask and registration mark the step such as to aim at, pilot process is identical with embodiment one.
All the other are identical with embodiment one.
Embodiment 3
For <100> silicon chip, the single rectangle width W of rectangle registration mark
0be 20 microns, length L is 200 microns, and rectangular strip quantity is 100, and the gross area of registration mark is 0.8mm
2, for mask graph in ultraviolet photolithographic and silicon chip { aiming at of 111} crystal face.
1. on silicon chip 1, make rectangle registration mark 2, and etch in the etching masks of resistance to wet method such as silicon nitride or silicon dioxide 5;
2. at 60 DEG C, carry out wet etching in 50wt%KOH solution about 4 hours, in silica-based 6, form new rectangle registration mark 3, mask 5 is removed with HF solution or dry etching local, rectangle registration mark 3 is exposed completely, and so far, silicon chip { located by the zero error of 111} crystal face 4;
3., in ultraviolet photolithographic, with beam of laser 7 dozens pre-grating mask 8 made on mask, receiving screen 9 records its diffraction pattern, as datum line 10;
4. the silicon chip 1 comprising rectangle registration mark 3 is placed on position to be exposed, with the incident rectangle registration mark 3 of laser 7, receiving screen 9 there will be a series of diffraction pattern 11, utilize the micro-adjusting mechanism of ultraviolet photolithographic machine, adjustment silicon chip 1, makes diffraction pattern 11 aim at datum line 10;
So far, grating mask 8 and silicon chip { having aimed at of 111} crystal face 4.
This enforcement alignment error derive from step 3. and 4. in the aiming at of the record of datum line 10 and diffraction pattern 11 and datum line 10, its size depends on the resolution error Δ l that hot spot overlaps with datum line, and hot spot is to the distance D of reference element or silicon chip; Δ l depends on human eye resolution capability to a certain extent, can improve alignment precision, in this embodiment by increasing D.Get Δ l=1mm, D=5000mm, then the alignment error computing formula of rectangle registration mark and grating mask is as follows, and total alignment error is ± 0.016 ° as calculated.
The explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in the protection range of the claims in the present invention.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. grating mask and silicon chip an alignment methods for 111} crystal face, comprises the following steps:
A), silicon chip makes multiple registration mark figures with diffraction properties, and each registration mark figure has the two long limits parallel with the gulde edge of described silicon chip;
B), by steps A) silicon chip that obtains carries out wet etching, make the long edge of described registration mark figure silicon chip { 111} crystal face ends, and obtains the silicon chip with multiple first registration mark figure;
C), location characterizes the datum line of grating mask, adopts laser to irradiate the long limit of described multiple first registration mark figure, obtains the diffraction spot on the long limit of described multiple first registration mark figure, overlapped by described datum line with described diffraction spot.
2. alignment methods according to claim 1, is characterized in that, described registration mark figure is rectangle.
3. alignment methods according to claim 2, is characterized in that, the long limit of described rectangle is 50 ~ 1000 μm, and width is 10 ~ 50 μm.
4. alignment methods according to claim 1 and 2, is characterized in that, the quantity of described registration mark figure is greater than 20, and the gross area is less than 1mm
2.
5. alignment methods according to claim 1 and 2, is characterized in that, described silicon chip is <110> silicon chip or <100> silicon chip.
6. alignment methods according to claim 1 and 2, is characterized in that, the time of described wet etching is less than 4h.
7. alignment methods according to claim 1 and 2, is characterized in that, the etching liquid of described wet etching is anisotropic etching liquid.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646329A (en) * | 2018-03-29 | 2018-10-12 | 安徽工程大学 | The preparation method of X-ray self-supporting glittering transmission grating |
| CN109782384A (en) * | 2018-12-26 | 2019-05-21 | 中国科学院长春光学精密机械与物理研究所 | Novel critical angle transmission grating production method |
| CN115657183A (en) * | 2022-11-21 | 2023-01-31 | 苏州大学 | Preparation method of echelle grating in holographic exposure-wet etching |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319638B1 (en) * | 1999-03-30 | 2001-11-20 | Nec Corporation | Semiconductor device manufacturing method of accurately performing alignment of patterning, mask for exposure |
| US20050118781A1 (en) * | 2003-12-01 | 2005-06-02 | Berge Peter T. | Substrate, method of preparing a substrate, method of measurement, lithographic apparatus, device manufacturing method and device manufactured thereby, and machine-readable storage medium |
| CN103021808A (en) * | 2012-11-29 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method for preparing graphene image with specific edge |
| CN103488063A (en) * | 2012-06-11 | 2014-01-01 | 无锡华润上华半导体有限公司 | Align marker and manufacturing method thereof |
-
2015
- 2015-11-17 CN CN201510793828.1A patent/CN105428292B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319638B1 (en) * | 1999-03-30 | 2001-11-20 | Nec Corporation | Semiconductor device manufacturing method of accurately performing alignment of patterning, mask for exposure |
| US20050118781A1 (en) * | 2003-12-01 | 2005-06-02 | Berge Peter T. | Substrate, method of preparing a substrate, method of measurement, lithographic apparatus, device manufacturing method and device manufactured thereby, and machine-readable storage medium |
| CN103488063A (en) * | 2012-06-11 | 2014-01-01 | 无锡华润上华半导体有限公司 | Align marker and manufacturing method thereof |
| CN103021808A (en) * | 2012-11-29 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method for preparing graphene image with specific edge |
Non-Patent Citations (1)
| Title |
|---|
| YANCHANG ZHENG等: "《Alignment method combining interference lithography with anisotropic wet etch technique for fabrication of high aspect ratio silicon gratings》", 《OPTICS EXPRESS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646329A (en) * | 2018-03-29 | 2018-10-12 | 安徽工程大学 | The preparation method of X-ray self-supporting glittering transmission grating |
| CN109782384A (en) * | 2018-12-26 | 2019-05-21 | 中国科学院长春光学精密机械与物理研究所 | Novel critical angle transmission grating production method |
| CN109782384B (en) * | 2018-12-26 | 2020-07-03 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing critical angle transmission grating |
| CN115657183A (en) * | 2022-11-21 | 2023-01-31 | 苏州大学 | Preparation method of echelle grating in holographic exposure-wet etching |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105428292B (en) | 2018-08-03 |
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