CN102323633A - Manufacturing method for holographic dual-blazed grating - Google Patents
Manufacturing method for holographic dual-blazed grating Download PDFInfo
- Publication number
- CN102323633A CN102323633A CN201110318325A CN201110318325A CN102323633A CN 102323633 A CN102323633 A CN 102323633A CN 201110318325 A CN201110318325 A CN 201110318325A CN 201110318325 A CN201110318325 A CN 201110318325A CN 102323633 A CN102323633 A CN 102323633A
- Authority
- CN
- China
- Prior art keywords
- grating
- etching
- homogeneity
- ion beam
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention discloses a manufacturing method for a holographic dual-blazed grating. The two blaze angles of the holographic dual-blazed grating are respectively a blaze angle A and a blaze angle B. Required blazed gratings A and B are obtained by manufacturing two homogeneous gratings A and B on a substrate, taking the two homogeneous gratings as masks, and performing oblique ion beam etching. Because the positive ion beam etching time can be controlled when the homogeneous gratings are manufactured, the depths of the grooves of the homogenous gratings can be controlled precisely; in addition, the homogenous grating masks and the substrate are made of the same material, the etching rate of the homogeneous grating masks and the etching rate of the substrate are kept consistent all the time, so that the precise control of the blaze angles can be realized.
Description
Technical field
The present invention relates to a kind of preparation method of diffraction optical element, be specifically related to a kind of preparation method of holographic double balzed grating.
Background technology
Grating is the very extensive and important high-resolution dispersing optics element of a kind of application, occupies considerable status in modern times in the optical instrument.
As everyone knows; In fact single grid seam diffraction principal maximum direction is the geometrical optics direction of propagation of light; It also is the zero level direction of whole many seam gratings; It is concentrating luminous energy, and can not be various wavelength separately, then biases toward in the practical application luminous energy as much as possible is concentrated on a certain specific level time.Need diffraction grating be scribed for this reason and become to have the flute profile of confirming through calculating; The predetermined order of diffraction time direction of the principal maximum direction (or light geometrical optics direction of propagation) that makes single grid groove diffraction and whole grating is consistent, can make so most of luminous energy concentrate on the predetermined order of diffraction inferior on.During from this orientation detection, the intensity of spectrum is maximum, and this phenomenon is called glitter (blaze), and this grating is called blazed grating.Glitter and make grating diffration efficient be greatly improved.
Though blazed grating has a lot of advantages, on broadband, as from the ultraviolet to the infrared band, all seeking out higher diffraction efficiency; Still very difficult, for this reason, the holographic double balzed grating product has appearred; Realizing in the broadband, all have higher, diffraction efficiency uniformly.Holographic double balzed grating has boundless market outlook owing to have broadband high-level efficiency advantage.
At application number is in the one Chinese patent application file of CN200910231737.3; A kind of method for making of holographic double balzed grating is disclosed; This method is produced earlier the A blazing angle on substrate grating blocks the a-quadrant then, on the B zone, makes the grating with B blazing angle again.The blazed grating of two kinds of different blazing angles all adopts holographic ion beam etching method, promptly makes the photoresist grating mask earlier on the surface, uses oblique ion beam etching then, on substrate, produces leg-of-mutton blazed grating.Through the photoresist thickness on A, B two zones before and after the control, realize the making of two blazing angles.
Yet in above-mentioned method, the grating of photoresist through forming after the photoetching process, it accounts for wide ratio, flute profile and groove depth and is difficult to realize accurately control; In addition because in oblique ion beam etching; Because the difference on photoresist and the substrate material, it is inconsistent etch rate to occur, causes the final blazed grating that forms; There are error in its blazing angle and expection, have no idea to realize accurate control.
For this reason, be necessary to seek a kind of method of new making holographic double balzed grating, address the above problem.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of method for making that can accurately control the holographic double balzed grating of two blazing angles.Two blazing angles of this holographic double balzed grating are respectively A blazing angle and B blazing angle, and double balzed grating is divided into two districts, the corresponding A blazing angle be the A grating region, corresponding B blazing angle be the B grating region.
This method for making comprises step:
1) on substrate, is coated with photoresist;
2) said photoresist layer is carried out photoetching, form photoresist grating;
3) blocking said B grating region, on the A grating region, is mask with said photoresist grating, and substrate is carried out the forward ion beam etching, and the photoresist grating figure transfer to substrate, is formed the homogeneity grating of A grating region, and etching depth is determined by the A blazing angle;
4) blocking said A grating region, on the B grating region, is mask with said photoresist grating, and substrate is carried out the forward ion beam etching, and the photoresist grating figure transfer to substrate, is formed the homogeneity grating of B grating region, and etching depth is determined by the B blazing angle;
5) clean substrate, remove the residue photoresist.
6) block the B grating region; Homogeneity grating with said A grating region is a mask, and substrate is carried out oblique Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms the blazed grating of A blazing angle;
7) block the A grating region; Homogeneity grating with said B grating region is a mask, and substrate is carried out oblique Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms the blazed grating of B blazing angle;
8) clean substrate, obtain the blazed grating of two blazing angles
Optional; Said forward ion beam etching forward ion beam etching adopts Ar ion beam etching method or CHF3 reactive ion beam etching (RIBE) method; Its concrete technological parameter is: during the Ar ion beam etching, ion energy is 380eV to 520eV, and ion beam current is 70mA to 140mA; Accelerating potential is 240V to 300V, and operating pressure is 2.0 * 10
-2Pa; CHF
3During reactive ion beam etching (RIBE), ion energy is 300eV to 470eV, and ion beam current is 70mA to 140mA, and accelerating potential is 200V to 300V, and operating pressure is 1.4 * 10
-2Pa.
Optional, the wide ratio that accounts for of the homogeneity grating of said A grating region or the homogeneity grating of said B grating region is 0.25-0.6, the cycle is 300nm to 3000nm.
Optional, the homogeneity grating of said A grating region and the homogeneity grating of said B grating region are rectangular raster or trapezoidal grating simultaneously.
Optional, the etching depth of the homogeneity grating of said A grating region or the homogeneity grating of said B grating region make the etching angle of oblique Ar ion beam equal a drift angle oblique fire from this homogeneity grating to the base angle relative with this drift angle required angle.
Optional, the technological parameter of said oblique Ar ion-beam scanning etching is: ion energy 380eV to 520eV, ion beam current 70mA to 140mA, accelerating potential 240V to 300V, operating pressure 2.0 * 10
-2Pa, etching angle is 8 ° to 40 °.
Optional, the photoresist thickness of said coating is 200nm to 500nm.
Optional, at the said A of blocking grating region or when blocking the B grating region, the shelter of use is a channel(l)ed plate, this channel(l)ed plate make A grating region and B grating region with the form forth that replaces each other on substrate.
Because the utilization of technique scheme, the present invention compared with prior art has advantage:
1. the present invention adopts the forward ion beam etching to form the homogeneity grating mask, because the anisotropic character of forward ion beam etching only has good etching effect on the etching direction, therefore can realize the accurate control of homogeneity grating flute profile and groove depth.
2. the present invention is in the process of oblique Ar ion-beam scanning etching, because homogeneity grating mask and substrate are to form with a kind of material, both etch rates remain unanimity, therefore can realize the accurate control of blazing angle.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a holographic double balzed grating method for making process flow diagram of the present invention;
The geometric relationship figure of Fig. 2 rectangular raster;
The geometric relationship figure of Fig. 3 trapezoidal grating;
Fig. 4 is the corresponding effect synoptic diagram of each step under the first embodiment of the invention;
Fig. 5 is the corresponding effect synoptic diagram of each step under the second embodiment of the invention;
Fig. 6 is the corresponding effect synoptic diagram of each step under the third embodiment of the invention;
Fig. 7 is the corresponding effect synoptic diagram of each step under the four embodiment of the invention.
Embodiment
In the existing holographic double balzed grating method for making, when making A, B blazing angle, on photoresist, make earlier grating; And be that mask carries out oblique ion beam etching with this photoresist grating, there is following problem in this mode: the grating of photoresist through forming after the photoetching process receives the restriction of exposure technology and development etching technics; Its flute profile and groove depth are difficult to realize accurately control, in addition because in oblique ion beam etching, because the difference on photoresist and the substrate material; It is inconsistent etch rate to occur; Cause the final blazed grating that forms, there are error in its blazing angle and expection, have no idea to realize accurate control.
And the present invention is through making the homogeneity grating earlier on substrate; With this homogeneity grating is that mask carries out oblique Ar ion-beam scanning etching formation blazed grating, and compared with prior art, homogeneity grating mask of the present invention is when making; Can control the groove depth and the flute profile of grating through control forward ion beam etching; Because homogeneity grating mask and substrate are to form with a kind of material, and both etch rates remain unanimity, therefore can realize the accurate control of blazing angle in addition.
See also Fig. 1, Fig. 1 is a holographic double balzed grating method for making process flow diagram of the present invention.As shown in the figure, holographic double balzed grating method for making process flow diagram of the present invention comprises step:
S11: on substrate, be coated with photoresist.The technology of said coating photoresist can be spin-coating method, also can be vaporation method, and the photoresist layer thickness of coating is between the 200nm to 500nm.This photoresist layer can be positive glue, also can be negative glue, looks follow-up different processing mode and decides.In the present invention, be that example describes with positive glue.
S12: said photoresist layer is carried out photoetching, form the photoresist grating structure.Said photoetching can be laser interference lithography technology, also can be the mask exposure photoetching process.Select the laser interference carving technology in the present invention, be specially: the light that lasing light emitter sends forms two bundle or multi beam coherent lights after the light path beam splitting, and utilizes lens to converge to the light and dark conoscope image of photoresist surface formation.That a part of photoresist generation character in the conoscope image exposure area changes.After the developing liquid developing etching, on photoresist, form groove and protruding optical grating construction separately.
S13: blocking said B grating region, on the A grating region, is mask with said photoresist grating, and substrate is carried out the forward ion beam etching, and the photoresist grating structure is transferred on the substrate, forms the homogeneity grating of A grating region, and etching depth is determined by the A blazing angle.Said forward ion beam etching adopts Ar ion beam etching method or CHF
3The reactive ion beam etching (RIBE) method is carried out, and its concrete technological parameter is: during the Ar ion beam etching, ion energy is 380eV to 520eV, and ion beam current is 70mA to 140mA, and accelerating potential is 240V to 300V, and operating pressure is 2.0 * 10
-2Pa; CHF
3During reactive ion beam etching (RIBE), ion energy is 300eV to 470eV, and ion beam current is 70mA to 140mA, and accelerating potential is 200V to 300V, and operating pressure is 1.4 * 10
-2Pa.
S14: blocking said A grating region, on the B grating region, is mask with said photoresist grating, and substrate is carried out the forward ion beam etching, and the photoresist grating structure is transferred on the substrate, forms the homogeneity grating of B grating region, and etching depth is determined by the B blazing angle.The concrete technological parameter of this forward ion beam etching repeats no more with above-mentioned consistent here.
S15: clean substrate, remove the residue photoresist.After the forward ion beam etching is accomplished; The remaining photoresist of substrate surface meeting remainder; Adopt sulfuric acid+oxidizing agent solution to clean to the remaining photoresist of this part, make remaining photoresist, expose on-chip A grating region homogeneity grating and B grating region homogeneity grating by fully reaction removal.
S16: block the B grating region; Homogeneity grating with said A grating region is a mask, and substrate is carried out oblique Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms the blazed grating of A blazing angle;
S17: block the A grating region; Homogeneity grating with said B grating region is a mask, and substrate is carried out oblique Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms the blazed grating of B blazing angle;
The etching angle of Ar ion beam is drawn by following experimental formula according to required blazing angle:
θs≈α-3° (1)
In this experimental formula (1), θ s is the blazing angle of blazed grating, and α is the etching angle of Ar ion beam, is 15 ° blazed grating such as making blazing angle θ s, and then the etching angle α of Ar ion beam is 18 ° of degree.Generally, the blazing angle θ s scope of blazed grating is at 5 ° to 37 °, so the etching angle α scope of Ar ion beam is at 8 ° to 40 °.The concrete technological parameter of this oblique Ar ion-beam scanning etching is: ion energy 380eV to 520eV, ion beam current 70mA to 140mA, accelerating potential 240V to 300V, operating pressure 2.0 * 10
-2Pa.
S18: clean substrate, obtain the blazed grating of two blazing angles.
In above-mentioned method for making, the A grating region homogeneity grating that obtains through the forward ion beam etching and the flute profile of B grating region homogeneity grating can be rectangular raster simultaneously, also can be trapezoidal grating simultaneously.Usually, under the more regular situation of photoresist grating flute profile, adopting the resulting homogeneity grating of forward ion beam etching flute profile is rectangular raster; But because the photoresist grating mask is when the development etching; The asynchronism(-nization) of photoresist upper and lower and developer solution reaction causes the top of photoresist grating to be shunk, and makes the grating flute profile tapered; At this moment, be that mask is made the formed homogeneity grating of forward ion beam etching and will be become trapezoidal with this photoresist grating again.For the homogeneity grating of different flute profiles, the etching time of forward ion beam, i.e. the groove depth of homogeneity grating, its computing formula are also different.
For rectangular raster, see also Fig. 2, its computing formula is:
In this formula (2), α is the etching angle of Ar ion beam, and d is the groove depth of homogeneity grating, and Λ is the cycle of homogeneity grating, and a is the width (a is an intermediate quantity, does not directly appear in the formula 2) of homogeneity grating, and f=a/ Λ is the wide ratio of accounting for of homogeneity grating.
For trapezoidal grating, see also Fig. 3, its computing formula is:
In this formula (3), α is the etching angle of Ar ion beam, and d is the groove depth of homogeneity grating; Λ is the cycle of homogeneity grating, and a is the width (a is an intermediate quantity, does not directly appear in the formula 3) of homogeneity grating; F=a/ Λ is the wide ratio of accounting for of homogeneity grating, and β is trapezoidal following base angle.
Above-mentioned two formula, the geometric relationship of institute's foundation is: the groove depth of homogeneity grating make the etching angle of oblique Ar ion beam equal a drift angle oblique fire from this homogeneity grating to the base angle relative with this drift angle required angle.
The wide ratio that accounts for of the homogeneity grating of said A grating region or the homogeneity grating of said B grating region is 0.25-0.6, and the cycle is 300nm to 3000nm.
For the time of oblique Ar ion-beam scanning etching, then so that the complete etching of homogeneity grating is advisable.In practical operation, because the restriction of process conditions, at the last reserve part homogeneity grating of oblique Ar ion beam etching, make it form the rake angle of blazed grating for fear of over etching.
Below, with several embodiments holographic double balzed grating method for making of the present invention is elaborated again below.It will be appreciated that the cited parameter of following several embodiments only is that several kinds in the institute of the present invention protection domain are specifically used, rather than limits protection scope of the present invention with this.
Embodiment one: please with reference to Fig. 4, Fig. 4 is the corresponding effect synoptic diagram of each step under the first embodiment of the invention.Making the grating cycle is 833 nanometers; Two blazing angles are respectively the holographic double balzed gratings of 10 ° and 25 °; Adopt and interfere exposure, forward ion beam etching and oblique Ar ion-beam scanning etching to realize that the A of made, two kinds of homogeneity gratings of B are rectangular raster, account for wide than f=a/ Λ=0.5.May further comprise the steps:
(1) coating thickness is the photoresist 11 of 350 nanometers on substrate 10.
(2) photoresist 11 is carried out interference lithography, make photoresist grating 12.
(3) blocking said B grating region, on the A grating region, is mask with said photoresist grating 12, and substrate is carried out the forward ion beam etching, and photoresist grating 12 is transferred on the substrate, forms the homogeneity grating 13 of A grating region, and etching depth is determined by the A blazing angle.Analyze and make 10 ° of needed etching depths of blazing angle (A blazing angle) grating, according to formula (2), the groove depth d that can get A grating region homogeneity grating mask is 96 nanometers.For the A grating region, through ion beam etching, the photoresist grating mask is transferred on the substrate, the degree of depth of etching is 96 nanometers for this reason.Here adopt the Ar ion beam etching, ion energy 400eV, ion beam current 100mA, accelerating potential 240V, operating pressure 2.0 * 10
-2Pa.
(4) blocking said A grating region, on the B grating region, is mask with said photoresist grating 12, and substrate is carried out the forward ion beam etching, and photoresist grating 12 is transferred on the substrate, forms the homogeneity grating 14 of B grating region, and etching depth is determined by the B blazing angle.Analyze and make 25 ° of needed etching depths of blazing angle (B blazing angle) grating; The groove depth d that in like manner can obtain B grating region homogeneity grating 14 according to formula (2) is 221 nanometers; Block the A grating region, for the photoresist grating mask of B grating region, through ion beam etching for this reason; The photoresist grating mask is transferred on the substrate, and the degree of depth of etching is 221 nanometers.Here adopt CHF
3Reactive ion beam etching (RIBE), ion energy 430eV, ion beam current 100mA, accelerating potential 240V, operating pressure 1.4 * 10
-2Pa.
(5) clean substrate, remove the residue photoresist.
(6) block the B grating region; Homogeneity grating 13 with the A grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of base material successively is etched, to form leg-of-mutton blazed grating flute profile; Here ion beam etching angle α=θ s+3 °=13 °, adopt the Ar ion beam etching, ion energy 450eV, ion beam current 100mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 10 ° of blazing angle blazed gratings 15 that etching is accomplished at the A grating region just the homogeneity grating mask has been carved to best.
(7) block the A grating region; Homogeneity grating 14 with the B grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms leg-of-mutton blazed grating flute profile; Here ion beam inclined angle alpha=θ s+3 °=28 °, adopt the Ar ion beam etching, ion energy 450eV, ion beam current 100mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 25 ° of blazing angle blazed gratings 16 that etching is accomplished at the B grating region just the homogeneity grating mask has been carved to best.
(8) clean substrate, obtained double balzed grating.
Embodiment two: please with reference to Fig. 5, Fig. 5 is the corresponding effect synoptic diagram of each step under the second embodiment of the invention.Making the grating cycle is 500 nanometers; Two blazing angles are respectively the methods of the holographic double balzed grating of 10 ° and 20 °; Adopt and interfere exposure, forward ion beam etching and oblique Ar ion-beam scanning etching to realize; The A of made, two kinds of homogeneity gratings of B are trapezoidal grating, and trapezoidal angle β is 80 °, account for wide than f=a/ Λ=0.5.May further comprise the steps:
(1) coating thickness is the photoresist 21 of 200 nanometers on substrate 20.
(2) carry out interference lithography, make photoresist grating 22.
(3) blocking said B grating region, on the A grating region, is mask with said photoresist grating 22, and substrate is carried out the forward ion beam etching, and photoresist grating 22 is transferred on the substrate, forms the homogeneity grating 23 of A grating region, and etching depth is determined by the A blazing angle.Analyze and make 10 ° of needed etching depths of blazing angle (A blazing angle) grating, according to formula (3), the groove depth d that can get A grating region homogeneity grating mask is 60 nanometers.For the A grating region, through ion beam etching, the photoresist grating mask is transferred on the substrate, the degree of depth of etching is 60 nanometers for this reason.Here adopt the Ar ion beam etching, ion energy 400eV, ion beam current 100mA, accelerating potential 240V, operating pressure 2.0 * 10
-2Pa.
(4) blocking said A grating region, on the B grating region, is mask with said photoresist grating 22, and substrate is carried out the forward ion beam etching, and photoresist grating 22 is transferred on the substrate, forms the homogeneity grating 24 of B grating region, and etching depth is determined by the B blazing angle.Analyze and make 20 ° of needed etching depths of blazing angle (B blazing angle) grating; The groove depth d that in like manner can obtain the homogeneity grating according to formula (3) is 114 nanometers; Block the A grating region, for the photoresist grating mask of B grating region, through ion beam etching for this reason; The photoresist grating mask is transferred on the substrate, and the degree of depth of etching is 114 nanometers.Here adopt the Ar ion beam etching, ion energy 450eV, ion beam current 100mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa.
(5) clean substrate, remove the residue photoresist.
(6) block the B grating region; Homogeneity grating 23 with the A grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of base material successively is etched, to form leg-of-mutton blazed grating flute profile; Here ion beam etching angle α=θ s+3 °=13 °, adopt the Ar ion beam etching, ion energy 450eV, ion beam current 100mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 10 ° of blazing angle blazed gratings 25 that etching is accomplished at the A grating region just the homogeneity grating mask has been carved to best.
(7) block the A grating region; Homogeneity grating 24 with the B grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms leg-of-mutton blazed grating flute profile; Here ion beam inclined angle alpha=θ s+3 °=23 °, adopt the Ar ion beam etching, ion energy 450eV, ion beam current 100mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 20 ° of blazing angle blazed gratings 26 that etching is accomplished at the B grating region just the homogeneity grating mask has been carved to best.
(8) clean substrate, obtained double balzed grating.
Embodiment three: please with reference to Fig. 6, Fig. 6 is the corresponding effect synoptic diagram of each step under the third embodiment of the invention.In the present embodiment, at the said A of blocking grating region or when blocking the B grating region, the shelter of use is a channel(l)ed plate, this channel(l)ed plate make A grating region and B grating region with the form forth that replaces each other on substrate, as shown in Figure 6.Making the grating cycle is 1000 nanometers; Two blazing angles are respectively the holographic double balzed gratings of 10 ° and 20 °; Adopt and interfere exposure, forward ion beam etching and oblique Ar ion-beam scanning etching to realize that the A of made, two kinds of homogeneity gratings of B are rectangular raster, account for wide than f=a/ Λ=0.5.May further comprise the steps:
(1) coating thickness is the photoresist 31 of 500 nanometers on substrate 30.
(2) carry out interference lithography, make photoresist grating 32.
(3) blocking said B grating region with channel(l)ed plate 37, on the A grating region, is mask with said photoresist grating 32; Substrate is carried out the forward ion beam etching; Photoresist grating 32 is transferred on the substrate, formed the homogeneity grating 33 of A grating region, etching depth is determined by the A blazing angle.Analyze and make 10 ° of needed etching depths of blazing angle (A blazing angle) grating, according to formula (2), the groove depth d that can get A grating region homogeneity grating mask is 116 nanometers.For the A grating region, through ion beam etching, the photoresist grating mask is transferred on the substrate, the degree of depth of etching is 116 nanometers for this reason.Here adopt the Ar ion beam etching, ion energy 450eV, ion beam current 100mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa.Here the A grating region and the B grating region that form; Deciding according to the pattern distribution on the channel(l)ed plate 37, is 10mm such as the openwork part width on the channel(l)ed plate 37, is spaced apart 10mm; A grating region that then forms and B grating region form the repetitive structure of ABAB... so that width 10mm is spaced apart separately.
(4) blocking said A grating region, on the B grating region, is mask with said photoresist grating 32; Substrate is carried out the forward ion beam etching; The figure transfer of photoresist grating 32 to substrate, is formed the homogeneity grating 34 of B grating region, and etching depth is determined by the B blazing angle.Analyze and make 20 ° of needed etching depths of blazing angle (B blazing angle) grating; The groove depth d that in like manner can obtain B grating region homogeneity grating 34 according to formula (2) is 213 nanometers; Block the A grating region, for the photoresist grating mask of B grating region, through ion beam etching for this reason; The photoresist grating mask is transferred on the substrate, and the degree of depth of etching is 213 nanometers.Here adopt CHF
3Reactive ion beam etching (RIBE), ion energy 400eV, ion beam current 100mA, accelerating potential 240V, operating pressure 1.4 * 10
-2Pa.
(5) clean substrate, remove the residue photoresist.
(6) block the B grating region; Homogeneity grating 33 with the A grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of base material successively is etched, to form leg-of-mutton blazed grating flute profile; Here ion beam etching angle α=θ s+3 °=13 °, adopt the Ar ion beam etching, ion energy 400eV, ion beam current 90mA, accelerating potential 240V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 10 ° of blazing angle blazed gratings 35 that etching is accomplished at the A grating region just the homogeneity grating mask has been carved to best.
(7) block the A grating region; Homogeneity grating 34 with the B grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms leg-of-mutton blazed grating flute profile; Here ion beam inclined angle alpha=θ s+3 °=23 °, adopt the Ar ion beam etching, ion energy 500eV, ion beam current 120mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 20 ° of blazing angle blazed gratings 36 that etching is accomplished at the B grating region just the homogeneity grating mask has been carved to best.
(8) clean substrate, obtained double balzed grating.
Embodiment four: please with reference to Fig. 7, Fig. 7 is the corresponding effect synoptic diagram of each step under the four embodiment of the invention.In the present embodiment, at the said A of blocking grating region or when blocking the B grating region, the shelter of use is a channel(l)ed plate, this channel(l)ed plate make A grating region and B grating region with the form forth that replaces each other on substrate, as shown in Figure 7.Making the grating cycle is 3000 nanometers; Two blazing angles are respectively the holographic double balzed gratings of 10 ° and 20 °; Adopt and interfere exposure, forward ion beam etching and oblique Ar ion-beam scanning etching to realize that the A of made, two kinds of homogeneity gratings of B are trapezoidal grating, account for wide than f=a/ Λ=0.5; The trapezoidal angle β of A grating region is 85 °, and the trapezoidal angle β of B grating region is 75 °.May further comprise the steps:
(1) coating thickness is the photoresist 41 of 500 nanometers on substrate 40.
(2) carry out interference lithography, make photoresist grating 42.
(3) blocking said B grating region with channel(l)ed plate 47, on the A grating region, is mask with said photoresist grating 42; Substrate is carried out the forward ion beam etching; Photoresist grating 42 is transferred on the substrate, formed the homogeneity grating 43 of A grating region, etching depth is determined by the A blazing angle.Analyze and make 10 ° of needed etching depths of blazing angle (A blazing angle) grating, according to formula (3), the groove depth d that can get A grating region homogeneity grating mask is 354 nanometers.For the A grating region, through ion beam etching, the photoresist grating mask is transferred on the substrate, the degree of depth of etching is 354 nanometers for this reason.Here adopt CHF
3Reactive ion beam etching (RIBE), ion energy 400eV, ion beam current 100mA, accelerating potential 240V, operating pressure 1.4 * 10
-2Pa.Here the A grating region and the B grating region that form; Deciding according to the pattern distribution on the channel(l)ed plate 47, is 3mm such as the openwork part width on the channel(l)ed plate 47, is spaced apart 3mm; A grating region that then forms and B grating region form the repetitive structure of ABAB... so that width 3mm is spaced apart separately.
(4) blocking said A grating region, on the B grating region, is mask with said photoresist grating 42; Substrate is carried out the forward ion beam etching; The figure transfer of photoresist grating 42 to substrate, is formed the homogeneity grating 44 of B grating region, and etching depth is determined by the B blazing angle.Analyze and make 20 ° of needed etching depths of blazing angle (B blazing angle) grating; The groove depth d that in like manner can obtain B grating region homogeneity grating 44 according to formula (3) is 718 nanometers; Block the A grating region, for the photoresist grating mask of B grating region, through ion beam etching for this reason; The photoresist grating mask is transferred on the substrate, and the degree of depth of etching is 718 nanometers.Here adopt CHF
3Reactive ion beam etching (RIBE), ion energy 450eV, ion beam current 120mA, accelerating potential 270V, operating pressure 1.4 * 10
-2Pa.
(5) clean substrate, remove the residue photoresist.
(6) block the B grating region; Homogeneity grating 43 with the A grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of base material successively is etched, to form leg-of-mutton blazed grating flute profile; Here ion beam etching angle α=θ s+3 °=13 °, adopt the Ar ion beam etching, ion energy 450eV, ion beam current 100mA, accelerating potential 240V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 10 ° of blazing angle blazed gratings 45 that etching is accomplished at the A grating region just the homogeneity grating mask has been carved to best.
(7) block the A grating region; Homogeneity grating 44 with the B grating region is a mask, through inclination Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms leg-of-mutton blazed grating flute profile; Here ion beam inclined angle alpha=θ s+3 °=23 °, adopt the Ar ion beam etching, ion energy 500eV, ion beam current 120mA, accelerating potential 260V, operating pressure 2.0 * 10
-2Pa; Etching time promptly obtains 20 ° of blazing angle blazed gratings 46 that etching is accomplished at the B grating region just the homogeneity grating mask has been carved to best.
(8) clean substrate, obtained double balzed grating.
In each above-mentioned embodiment, selected substrate can be quartz glass, K9 glass or other transparent optical materials.
In sum, the method for making of a kind of holographic double balzed grating that the present invention proposes through on substrate, making the homogeneity grating earlier, is a mask with this homogeneity grating, carries out oblique ion beam etching and obtains required blazed grating.The present invention compares with existing method, has following several characteristics:
1. the present invention adopts the forward ion beam etching to form the homogeneity grating mask, because the anisotropic character of forward ion beam etching only has good etching effect on the etching direction, therefore can realize the accurate control of homogeneity grating flute profile and groove depth.
2. the present invention is in the process of oblique Ar ion-beam scanning etching, because homogeneity grating mask and substrate are to form with a kind of material, both etch rates remain unanimity, therefore can realize the accurate control of blazing angle.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (8)
1. holographic double balzed grating method for making; Two blazing angles of said holographic double balzed grating are respectively A blazing angle and B blazing angle; Double balzed grating is divided into two districts; The corresponding A blazing angle be the A grating region, corresponding B blazing angle be the B grating region, it is characterized in that: said method for making comprises the following steps:
1) on substrate, is coated with photoresist;
2) said photoresist layer is carried out photoetching, form photoresist grating;
3) blocking said B grating region, on the A grating region, is mask with said photoresist grating, and substrate is carried out the forward ion beam etching, and the photoresist grating figure transfer to substrate, is formed the homogeneity grating of A grating region, and etching depth is determined by the A blazing angle;
4) blocking said A grating region, on the B grating region, is mask with said photoresist grating, and substrate is carried out the forward ion beam etching, and the photoresist grating figure transfer to substrate, is formed the homogeneity grating of B grating region, and etching depth is determined by the B blazing angle;
5) clean substrate, remove the residue photoresist.
6) block the B grating region; Homogeneity grating with said A grating region is a mask, and substrate is carried out oblique Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms the blazed grating of A blazing angle;
7) block the A grating region; Homogeneity grating with said B grating region is a mask, and substrate is carried out oblique Ar ion-beam scanning etching, utilizes the occlusion effect of homogeneity grating mask to ion beam; The diverse location of substrate material successively is etched, forms the blazed grating of B blazing angle;
8) clean substrate, obtain the blazed grating of two blazing angles
2. holographic double balzed grating method for making as claimed in claim 1 is characterized in that: said forward ion beam etching adopts Ar ion beam etching method or CHF
3The reactive ion beam etching (RIBE) method, its concrete technological parameter is: during the Ar ion beam etching, ion energy is 380eV to 520eV, and ion beam current is 70mA to 140mA, and accelerating potential is 240V to 300V, and operating pressure is 2.0 * 10
-2Pa; CHF
3During reactive ion beam etching (RIBE), ion energy is 300eV to 470eV, and ion beam current is 70mA to 140mA, and accelerating potential is 200V to 300V, and operating pressure is 1.4 * 10
-2Pa.
3. holographic double balzed grating method for making as claimed in claim 1 is characterized in that: the wide ratio that accounts for of the homogeneity grating of said A grating region or the homogeneity grating of said B grating region is 0.25-0.6, and the cycle is 300 to 3000nm.
4. holographic double balzed grating method for making as claimed in claim 1 is characterized in that: the homogeneity grating of said A grating region and the homogeneity grating of said B grating region are rectangular raster or trapezoidal grating simultaneously.
5. holographic double balzed grating method for making as claimed in claim 1 is characterized in that: the etching depth of the homogeneity grating of said A grating region or the homogeneity grating of said B grating region make the etching angle of oblique Ar ion beam equal a drift angle oblique fire from this homogeneity grating to the base angle relative with this drift angle required angle.
6. holographic double balzed grating method for making as claimed in claim 1; It is characterized in that: the technological parameter of said oblique Ar ion-beam scanning etching is: ion energy 380eV to 520eV; Ion beam current 70mA to 140mA, accelerating potential 240V to 300V, operating pressure 2.0 * 10
-2Pa, etching angle is 8 ° to 40 °.
7. holographic double balzed grating method for making as claimed in claim 1 is characterized in that: the photoresist thickness of said coating is 200nm to 500nm.
8. holographic double balzed grating method for making as claimed in claim 1; It is characterized in that: at the said A of blocking grating region or when blocking the B grating region; The shelter that uses is a channel(l)ed plate, this channel(l)ed plate make A grating region and B grating region with the form forth that replaces each other on substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110318325A CN102323633A (en) | 2011-10-19 | 2011-10-19 | Manufacturing method for holographic dual-blazed grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110318325A CN102323633A (en) | 2011-10-19 | 2011-10-19 | Manufacturing method for holographic dual-blazed grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102323633A true CN102323633A (en) | 2012-01-18 |
Family
ID=45451411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110318325A Pending CN102323633A (en) | 2011-10-19 | 2011-10-19 | Manufacturing method for holographic dual-blazed grating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102323633A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102540300A (en) * | 2012-02-16 | 2012-07-04 | 苏州大学 | Method for preparing convex-surface double-blazed grating |
| CN102565905A (en) * | 2012-02-16 | 2012-07-11 | 苏州大学 | Preparation method for convex-surface double-blazed grating |
| CN102981197A (en) * | 2012-12-12 | 2013-03-20 | 中国科学院长春光学精密机械与物理研究所 | Reactive ion beam etching method of broad-band grating |
| CN103185908A (en) * | 2011-12-30 | 2013-07-03 | 台湾超微光学股份有限公司 | Hybrid diffraction grating, mold, and manufacturing method of diffraction grating and mold thereof |
| US10302486B2 (en) | 2016-07-12 | 2019-05-28 | Oto Photonics Inc. | Spectrometer module and fabrication method thereof |
| CN113167947A (en) * | 2018-12-14 | 2021-07-23 | 应用材料股份有限公司 | Method for manufacturing tilted grating |
| CN115128810A (en) * | 2022-06-01 | 2022-09-30 | 上海蜃微科技有限公司 | Grating structure, waveguide device and display system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643620A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Production of blazed grating |
| US20020122255A1 (en) * | 2000-12-22 | 2002-09-05 | Makoto Ogusu | Method of manufacturing diffractive optical element |
| CN101320207A (en) * | 2008-07-14 | 2008-12-10 | 苏州大学 | Method for preparing optical grating by holography-ion beam etching |
| CN101726779A (en) * | 2009-12-03 | 2010-06-09 | 苏州大学 | Method for producing holographic double balzed grating |
| CN101799569A (en) * | 2010-03-17 | 2010-08-11 | 苏州大学 | Method for producing convex double blazed grating |
-
2011
- 2011-10-19 CN CN201110318325A patent/CN102323633A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5643620A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Production of blazed grating |
| US20020122255A1 (en) * | 2000-12-22 | 2002-09-05 | Makoto Ogusu | Method of manufacturing diffractive optical element |
| CN101320207A (en) * | 2008-07-14 | 2008-12-10 | 苏州大学 | Method for preparing optical grating by holography-ion beam etching |
| CN101726779A (en) * | 2009-12-03 | 2010-06-09 | 苏州大学 | Method for producing holographic double balzed grating |
| CN101799569A (en) * | 2010-03-17 | 2010-08-11 | 苏州大学 | Method for producing convex double blazed grating |
Non-Patent Citations (6)
| Title |
|---|
| 《中国优秀硕士学位论文全文数据库基础科学辑》 20081115 杨卫鹏 "全息光栅反应离子束刻蚀特性研究" 第A005-225页 2,6 , 第11期 * |
| 《光学学报》 20110430 汪海宾等 "Ar+离子束刻蚀制作凸面闪耀光栅" 第0405002-2页第1栏最后一段至第2栏第1行 5 第31卷, 第4期 * |
| 《真空 VACUUM》 20080531 洪义麟 等 "用于大尺寸衍射光栅的光刻胶残余物的灰化系统研制" 第25-27页 1-8 第45卷, 第3期 * |
| 杨卫鹏: ""全息光栅反应离子束刻蚀特性研究"", 《中国优秀硕士学位论文全文数据库基础科学辑》 * |
| 汪海宾等: ""Ar+离子束刻蚀制作凸面闪耀光栅"", 《光学学报》 * |
| 洪义麟 等: ""用于大尺寸衍射光栅的光刻胶残余物的灰化系统研制"", 《真空 VACUUM》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103185908A (en) * | 2011-12-30 | 2013-07-03 | 台湾超微光学股份有限公司 | Hybrid diffraction grating, mold, and manufacturing method of diffraction grating and mold thereof |
| CN103185908B (en) * | 2011-12-30 | 2016-05-04 | 台湾超微光学股份有限公司 | Hybrid diffraction grating, mold, and manufacturing method of diffraction grating and mold thereof |
| US10551531B2 (en) | 2011-12-30 | 2020-02-04 | Oto Photonics Inc. | Hybrid diffraction grating, mold insert and manufacturing methods thereof |
| CN102540300A (en) * | 2012-02-16 | 2012-07-04 | 苏州大学 | Method for preparing convex-surface double-blazed grating |
| CN102565905A (en) * | 2012-02-16 | 2012-07-11 | 苏州大学 | Preparation method for convex-surface double-blazed grating |
| CN102981197A (en) * | 2012-12-12 | 2013-03-20 | 中国科学院长春光学精密机械与物理研究所 | Reactive ion beam etching method of broad-band grating |
| US10302486B2 (en) | 2016-07-12 | 2019-05-28 | Oto Photonics Inc. | Spectrometer module and fabrication method thereof |
| CN113167947A (en) * | 2018-12-14 | 2021-07-23 | 应用材料股份有限公司 | Method for manufacturing tilted grating |
| CN115128810A (en) * | 2022-06-01 | 2022-09-30 | 上海蜃微科技有限公司 | Grating structure, waveguide device and display system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102323634B (en) | A kind of manufacture method of holographic double balzed grating | |
| CN102360093A (en) | Holographic blazed grating manufacturing method | |
| CN102323633A (en) | Manufacturing method for holographic dual-blazed grating | |
| CN101726779B (en) | Method for producing holographic double balzed grating | |
| US6913871B2 (en) | Fabricating sub-resolution structures in planar lightwave devices | |
| CN101799569B (en) | Method for producing convex double blazed grating | |
| US7146081B2 (en) | Waveguide including a plurality of waveguide segments | |
| CN102323635A (en) | Method for manufacturing holographic dual-blazed grating | |
| JP2023105236A (en) | Optical eyepiece using single-sided patterning of grating couplers | |
| CN1195240C (en) | Process for mfg. multi-phase diffraction optic element | |
| CN102540302A (en) | Manufacturing method of convex blazed grating | |
| CN102565905A (en) | Preparation method for convex-surface double-blazed grating | |
| JPH1078518A (en) | Optical waveguide bragg reflecting lattice | |
| KR100471380B1 (en) | Method for Manufacturing Optical Waveguide Using Laser Direct Writing And Optical Waveguide Using the Same | |
| CN103645532B (en) | A kind of matrix structure for making concave surface blazed grating and concave surface blazed grating method for making | |
| CN107195540A (en) | A kind of preparation method of array base palte, array base palte and display device | |
| CN102540300A (en) | Method for preparing convex-surface double-blazed grating | |
| JP2002365784A (en) | Multi-gradation mask, method of forming resist pattern and method of manufacturing optical element | |
| CN203838359U (en) | Base material structure for manufacturing concave blazed grating, and blazed grating convenient to manufacture | |
| JPS59116602A (en) | Production of chirped-grating | |
| CN102540301A (en) | Method for manufacturing convex-surface double-blazed grating | |
| JP2003014915A (en) | Optical element with dammann grating | |
| CN205507356U (en) | Ultraviolet laser light scribing device | |
| KR20200041250A (en) | Lattice structure for diffractive optic | |
| JPH09153446A (en) | Method and apparatus for interference exposure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120118 |