CN104584192B - 反射沉积环和包括反射沉积环的基板处理室 - Google Patents
反射沉积环和包括反射沉积环的基板处理室 Download PDFInfo
- Publication number
- CN104584192B CN104584192B CN201380044008.1A CN201380044008A CN104584192B CN 104584192 B CN104584192 B CN 104584192B CN 201380044008 A CN201380044008 A CN 201380044008A CN 104584192 B CN104584192 B CN 104584192B
- Authority
- CN
- China
- Prior art keywords
- substrate
- deposition ring
- support
- reflecting part
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 155
- 230000008021 deposition Effects 0.000 title claims abstract description 93
- 239000000463 material Substances 0.000 claims description 40
- 238000000151 deposition Methods 0.000 description 66
- 230000005855 radiation Effects 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002314 autoradiolysis reaction Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/598,828 US9905443B2 (en) | 2011-03-11 | 2012-08-30 | Reflective deposition rings and substrate processing chambers incorporating same |
| US13/598,828 | 2012-08-30 | ||
| PCT/US2013/056784 WO2014035957A1 (en) | 2012-08-30 | 2013-08-27 | Reflective deposition rings and substrate processing chambers incorporating same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104584192A CN104584192A (zh) | 2015-04-29 |
| CN104584192B true CN104584192B (zh) | 2018-03-30 |
Family
ID=50184232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380044008.1A Active CN104584192B (zh) | 2012-08-30 | 2013-08-27 | 反射沉积环和包括反射沉积环的基板处理室 |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR102117234B1 (ko) |
| CN (1) | CN104584192B (ko) |
| TW (1) | TWI600108B (ko) |
| WO (1) | WO2014035957A1 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6820866B2 (ja) * | 2015-05-29 | 2021-01-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | リフレクタを有する処理チャンバ |
| US11961723B2 (en) | 2018-12-17 | 2024-04-16 | Applied Materials, Inc. | Process kit having tall deposition ring for PVD chamber |
| USD888903S1 (en) | 2018-12-17 | 2020-06-30 | Applied Materials, Inc. | Deposition ring for physical vapor deposition chamber |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002134429A (ja) * | 2000-10-12 | 2002-05-10 | Applied Materials Inc | 基板処理装置用のベアリングカバー、基板処理装置および熱処理方法 |
| KR20070041959A (ko) * | 2005-10-17 | 2007-04-20 | 삼성전자주식회사 | 플라즈마 처리설비 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
| JP2000323487A (ja) * | 1999-05-14 | 2000-11-24 | Tokyo Electron Ltd | 枚葉式熱処理装置 |
| US6727176B2 (en) | 2001-11-08 | 2004-04-27 | Advanced Micro Devices, Inc. | Method of forming reliable Cu interconnects |
| US8658945B2 (en) * | 2004-02-27 | 2014-02-25 | Applied Materials, Inc. | Backside rapid thermal processing of patterned wafers |
| US20070241454A1 (en) * | 2006-04-13 | 2007-10-18 | Jun-Ming Chen | Capture ring |
| US8222574B2 (en) * | 2007-01-15 | 2012-07-17 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
| US20090260982A1 (en) * | 2008-04-16 | 2009-10-22 | Applied Materials, Inc. | Wafer processing deposition shielding components |
-
2013
- 2013-08-27 KR KR1020157007509A patent/KR102117234B1/ko active IP Right Grant
- 2013-08-27 CN CN201380044008.1A patent/CN104584192B/zh active Active
- 2013-08-27 WO PCT/US2013/056784 patent/WO2014035957A1/en active Application Filing
- 2013-08-29 TW TW102131092A patent/TWI600108B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002134429A (ja) * | 2000-10-12 | 2002-05-10 | Applied Materials Inc | 基板処理装置用のベアリングカバー、基板処理装置および熱処理方法 |
| KR20070041959A (ko) * | 2005-10-17 | 2007-04-20 | 삼성전자주식회사 | 플라즈마 처리설비 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104584192A (zh) | 2015-04-29 |
| KR102117234B1 (ko) | 2020-06-01 |
| WO2014035957A1 (en) | 2014-03-06 |
| KR20150048189A (ko) | 2015-05-06 |
| TW201413868A (zh) | 2014-04-01 |
| TWI600108B (zh) | 2017-09-21 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |