CN104576887A - 一种高发光率的led光源 - Google Patents

一种高发光率的led光源 Download PDF

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Publication number
CN104576887A
CN104576887A CN201510012484.6A CN201510012484A CN104576887A CN 104576887 A CN104576887 A CN 104576887A CN 201510012484 A CN201510012484 A CN 201510012484A CN 104576887 A CN104576887 A CN 104576887A
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Prior art keywords
substrate
light source
led light
described substrate
silica gel
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CN201510012484.6A
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赵立地
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Individual
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Individual
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

Abstract

本发明公开了一种高发光率的LED光源，它涉及LED技术领域。它包括基板、卡槽，所述的基板上设置有两对电极，基板上表面的内侧边缘对称设置有卡槽，所述的基板位于电极之间设置有固晶、焊线区，所述基板的左上正电极和右上负电极之间绝缘隔离，左下正电极和右下正电极负电极之间绝缘隔离。所述的基板上使用硅胶加黄色荧光粉围坝，硅胶黏度为10000-20000。本发明使光源发光角度从120°增加到180°，从而大幅提高LED光源的整体出光效率。

Description

一种高发光率的LED光源
技术领域
本发明涉及的是LED技术领域，具体涉及一种高发光率的LED光源。
背景技术
LED封装器件由于具有发光效率高、耗电少、无污染等特点，正被广泛应用于电视背光、广告标示、图文显示、装饰照明等领域。随着发光效率的不断提高，芯片、封装胶水、支架等原物料成本的降低，LED封装器件已经开始进入商业照明、家居照明等室内照明领域。为了降低LED封装器件的封装成本，减少应用时所需的LED封装器件数量，提高LED封装器件的应用灵活性，往往采用将多颗LED芯片放置于单个LED支架内进行集成封装，且为了满足集成封装形式的散热要求，LED支架多采用导热性良好的材料做为基板材料。
现有技术中的一种成品组装用的COB光源，它包含基板和一对正、负金属电极，基板为平面结构，正、负金属电极平坦地贴附在基板上，基板上设置有固晶、焊线、围坝以及灌胶区域。行业内采用上述的LED支架制作的COB光源，使用乳白色非透明硅胶围坝、灌胶制程成品，然而，由于传统使用围坝胶为非透明硅胶，发光角度为120°，发光角度有一定的局限性，从而影响到光源的出光效率。
发明内容
针对现有技术上存在的不足，本发明目的是在于提供一种高发光率的LED光源，使光源发光角度从120°增加到180°，从而大幅提高LED光源的整体出光效率。
为了实现上述目的，本发明是通过如下的技术方案来实现：一种高发光率的LED光源，包括基板、卡槽，所述的基板上设置有两对电极，基板上表面的内侧边缘对称设置有卡槽，所述的基板位于电极之间设置有固晶、焊线区，所述基板的左上正电极和右上负电极之间绝缘隔离，左下正电极和右下正电极负电极之间绝缘隔离。所述的基板上使用硅胶加黄色荧光粉围坝，硅胶黏度为10000-20000。
作为优选，所述的黄色荧光粉可替换为混合的黄色、红色和绿色荧光粉。
作为优选，所述的基板1上的左侧正负极分别接电源正负极。
本发明的有益效果：
1、光源的基板上设置这种围透明硅胶加荧光粉工艺，增加光源出光角度，提升出光效率。
2、光源整体光通量提升
3、硅胶与基板完美粘合，工艺简单。
4、由于该光源增加出光角度，产品出光效率会更高。
附图说明
下面结合附图和具体实施方式来详细说明本发明；
图1为本发明的基板外观图；
图2为本发明的围坝效果图；
图3为本发明围坝后封胶效果图；
图4为图3的侧视图。
具体实施方式
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体实施方式，进一步阐述本发明。
参照图1-4，本具体实施方式采用以下技术方案：一种高发光率的LED光源，包括基板1、卡槽2，所述的基板1上设置有两对电极，基板1上表面的内侧边缘对称设置有卡槽2，所述的基板位于电极之间设置有固晶、焊线区，所述基板的左上正电极和右上负电极之间绝缘隔离，左下正电极和右下正电极负电极之间绝缘隔离。
值得注意的是，所述的基板1上使用硅胶加黄色荧光粉围坝3，硅胶黏度为10000-20000。
值得注意的是，所述的黄色荧光粉可替换为混合的黄色、红色和绿色荧光粉。
此外，所述的基板1上的左侧正负极分别接电源正负极。
本具体实施方式通过在LED支架的基板上层围透明硅胶加黄色荧光粉(或为黄色、红色和绿色荧光粉混合)，增加光源出光角度为180°，从而大幅提高LED光源的整体出光效率。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (3)

1.一种高发光率的LED光源，其特征在于，包括基板(1)、卡槽(2)，所述的基板(1)上设置有两对电极，基板(1)上表面的内侧边缘对称设置有卡槽(2)，所述的基板位于电极之间设置有固晶、焊线区，所述基板的左上正电极和右上负电极之间绝缘隔离，左下正电极和右下正电极负电极之间绝缘隔离。所述的基板(1)上使用硅胶加黄色荧光粉围坝，硅胶黏度为10000-20000。
2.根据权利要求1所述的一种高发光率的LED光源，其特征在于，所述的黄色荧光粉可替换为混合的黄色、红色和绿色荧光粉。
3.根据权利要求1所述的一种高发光率的LED光源，其特征在于，所述的基板1上的左侧正负极分别接电源正负极。
CN201510012484.6A 2015-01-04 2015-01-04 一种高发光率的led光源 Pending CN104576887A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201787385U (zh) * 2010-08-16 2011-04-06 金明生 高温共烧陶瓷封装led集成光源
CN202616232U (zh) * 2012-06-15 2012-12-19 深圳市福仑德电子有限公司 Led封装结构
CN204391154U (zh) * 2014-12-26 2015-06-10 深圳市斯迈得光电子有限公司 一种高发光效率的led光源

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201787385U (zh) * 2010-08-16 2011-04-06 金明生 高温共烧陶瓷封装led集成光源
CN202616232U (zh) * 2012-06-15 2012-12-19 深圳市福仑德电子有限公司 Led封装结构
CN204391154U (zh) * 2014-12-26 2015-06-10 深圳市斯迈得光电子有限公司 一种高发光效率的led光源

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