CN104576642A - Deep and shallow double-trench structure and etching method - Google Patents
Deep and shallow double-trench structure and etching method Download PDFInfo
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- CN104576642A CN104576642A CN201410827317.2A CN201410827317A CN104576642A CN 104576642 A CN104576642 A CN 104576642A CN 201410827317 A CN201410827317 A CN 201410827317A CN 104576642 A CN104576642 A CN 104576642A
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Abstract
The invention provides a deep and shallow double-trench structure and an etching method, and aims to solve the problem about the lateral etching distance and etching efficiency of a trench in the deep trench etching technology. The process for normal one-time photoetching and etching is changed to two-time photoetching and etching, two times of photoetching adopt different photomasks, steps are formed, and a one-time trench is broken into a two-time step form to finish etching. Etching for large trench depth can be finished under the condition of the conventional equipment, the operation time can be controlled in a receivable range, the lateral etching degree of the trench is controlled effectively, and the condition of large trench depth can be met under the condition that a follow-up process is not changed.
Description
Technical field
The invention relates to a kind of trench process, and relate to a kind of in existing Equipment Foundations especially, for coordinating the exploitation of new product, subsequent technique can be made to meet when the not doing large change two groove structure of the depth that new product requires and the two groove etching method of the corresponding depth.
Background technology
Press, trench process is the technique that discrete component the most often uses, and how to etch meets the demands and can be convenient to follow-up groove protects the groove of process operation to become the difficult point of this type of technique.
Only; existing trench process is one-time formed, make gash depth very dark, and existing photoresist covering process is when the situation of this one-time formed large ditch depth; the restriction of protection groove and outward appearance development these two aspects normal cannot be taken into account, make the now fluted degree of depth cannot more than 90um.And owing to being one-shot forming, the distance making channel lateral etch can be very large, is not easy to technique below.In addition because etching groove speed reduces along with the increase of etch period, make the etching of deep trench (being greater than 100um) very difficult.
For the defect existed in above-mentioned existing deep plough groove etched technology or deficiency, the applicant is engaged in manufacturing experience and the technology accumulation of the industry then for many years with it, study energetically and how to improve from Structure and energy, to the disappearance of prior art can be improved, finally under the discretion of each side's condition is considered, develop the present invention.
Summary of the invention
The main purpose of the present invention is to provide the two groove structure of a kind of depth and lithographic method.The present invention is by the etching of twice groove; ensure that existing photoresist covering process can effectively cover and protect deep trench; and make etch period for the groove being greater than the 100um degree of depth in tolerance interval, reduce the amplitude because groove that lateral etching brings broadens simultaneously.
In order to achieve the above object and effect, the present invention adopts following technology contents: the two groove structure of a kind of depth, comprising: a silicon chip; One shallow trench, etching is formed at the surface of described silicon chip; One deep trench, etching is formed at the bottom of described shallow trench; Wherein, the junction of described shallow trench and described deep trench forms step; The degree of depth of wherein said deep trench is 75 ~ 120um; The width of wherein said shallow trench is 200 ~ 600um.
The present invention separately adopts following technology contents to reach above-mentioned object and effect: the two groove etching method of a kind of depth, comprises the following steps: to provide a silicon chip; The first light shield is used to carry out photoresist covering, exposure and development to described silicon chip; First time etching formation groove is carried out to described silicon chip, and cleaning photoetching glue; The second light shield is used to carry out photoresist covering, exposure and development to described silicon chip; Proceed second time etching to described silicon chip, in the position of a described groove, etching forms secondary groove, and cleaning photoetching glue; Wherein, varying in size of described first light shield and the second light shield, the groove formed after making first time etching is different with the groove width of the secondary groove formed after second time etching, secondary groove is made up of shallow trench and deep trench two parts, and described shallow trench and described deep trench form step in junction; Wherein said first time etches and second time etching all uses acidic liquid to etch; The degree of depth of wherein said deep trench is 75 ~ 120um; The width of wherein said shallow trench is 200 ~ 600um.
The present invention at least has following beneficial effect:
Present invention is disclosed the lithographic method of the two groove structures of the depth and this structure.The present invention can complete the etching of larger ditch depth when existing equipment board, and the activity duration can be made to control in tolerance interval; Effectively can control the degree of channel lateral etching; Subsequent technique can be made or else to make the situation being applicable to large ditch depth when changing.
Other objects of the present invention and advantage can be further understood from the technology contents disclosed by the present invention.In order to above and other object of the present invention, feature and advantage can be become apparent, special embodiment below also coordinates institute's accompanying drawings to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the trench cross section figure after the present invention's first time etching.
Fig. 2 is the trench cross section figure after the present invention's second time etching.
Fig. 3 is the schematic flow sheet of the lithographic method of the present invention.
[symbol description]
I groove
II bis-grooves
1 silicon chip
2 shallow trenchs
3 deep trench
4 steps
Embodiment
The content of the present invention's announcement relates to the lithographic method of the two groove structure of a kind of depth and said structure, its technical characteristics is, the technique normally doing a photoetching and etching is changed into and does Twi-lithography and etching, Twi-lithography uses different light shields, form step, the form that groove is resolved into twice step completes etching.
Next will coordinate institute's accompanying drawings through embodiment, and illustrate that the present invention has the unique technology parts such as innovation, progressive or effect compared with prior art, those of ordinary skill in the art can be realized according to this.Should be noted that, the modification that those of ordinary skill in the art carry out under not departing from spirit of the present invention and change, all do not depart from protection category of the present invention.
Refer to Fig. 2, the two groove structure of the depth of the present embodiment, is the groove forming desired depth on silicon chip 1, comprises the shallow trench 2 that etching is formed at silicon chip 1 surface, and etch the deep trench 3 be formed at bottom shallow trench 2.Above-mentioned shallow trench 2 and deep trench 3 define step 4 in both junctions.Final the formed groove of the present embodiment, the degree of depth at deep trench place is 75 ~ 120um, and the width at shallow trench place is 200 ~ 600um, but the present invention is not restricted to this.Above-mentioned groove width within the acceptable range.
[manufacturing process]
Refer to Fig. 1, Fig. 2 and Fig. 3, the architectural feature of the two groove of the depth of the present invention has described in detail as above, and next will further illustrate the etching technics forming the two groove of the above-mentioned depth, it mainly comprises the following steps:
First, step S100 is performed: provide a silicon chip 1.
Then, step S101 is performed: use the first light shield (in figure and not shown) to carry out photoresist covering, exposure and development to silicon chip 1.
Then, perform step S102: use acidic liquid to carry out first time etching formation groove I to silicon chip 1, and cleaning photoetching glue.
Then, step S103 is performed: use the second light shield (in figure and not shown) to carry out photoresist covering, exposure and development to the position that silicon chip 1 comprises an above-mentioned groove I.
Finally, perform step S104: use acidic liquid to proceed second time etching to the position that silicon chip 1 comprises an above-mentioned groove I, etching forms secondary groove II on the basis of a groove I, and cleaning photoetching glue.
The enforcement important item of above-mentioned steps S101, S103 is: the first light shield is different with the size requirements of the second light shield, makes first time etching formation groove I different with the groove width of the secondary groove II that second time etching is formed; And the final secondary groove II formed is made up of shallow trench 2, deep trench 3 two parts, shallow trench 2 and deep trench 3 form step 4 in junction.
In the present embodiment, the degree of depth of the deep trench 3 formed is 75 ~ 120um, and the width of shallow trench 4 is 200 ~ 600um, but the present invention is not restricted to this.
Owing to dividing in order to twice etching, the etch period of above-mentioned steps S102, S104 all within the acceptable range.
[testing requirement]
1, measure the degree of depth of groove, guarantee the degree of depth that gash depth reaches required.
2, check the outward appearance of wafer, guarantee that groove outward appearance is without exception.
The foregoing is only embodiments of the invention, it is also not used to limit scope of patent protection of the present invention.Anyly have the knack of alike those skilled in the art, not departing from spirit of the present invention and scope, the equivalence of the change done and retouching is replaced, and still falls in scope of patent protection of the present invention.
Claims (7)
1. the two groove structure of the depth, is characterized in that, comprising:
One silicon chip;
One shallow trench, etching is formed at the surface of described silicon chip;
One deep trench, etching is formed at the bottom of described shallow trench;
Wherein, the junction of described shallow trench and described deep trench forms step.
2. the two groove structure of the depth as claimed in claim 1, it is characterized in that, the degree of depth of wherein said deep trench is 75 ~ 120um.
3. the two groove structure of the depth as claimed in claim 1, it is characterized in that, the width of wherein said shallow trench is 200 ~ 600um.
4., for the formation of the two groove etching method of the depth of structure described in any one in claims 1 to 3, it is characterized in that, comprise the following steps:
One silicon chip is provided;
The first light shield is used to carry out photoresist covering, exposure and development to described silicon chip;
First time etching formation groove is carried out to described silicon chip, and cleaning photoetching glue;
The second light shield is used to carry out photoresist covering, exposure and development to described silicon chip;
Proceed second time etching to described silicon chip, in the position of a described groove, etching forms secondary groove, and cleaning photoetching glue;
Wherein, varying in size of described first light shield and the second light shield, the groove formed after making first time etching is different with the groove width of the secondary groove formed after second time etching, secondary groove is made up of shallow trench and deep trench two parts, and described shallow trench and described deep trench form step in junction.
5. the two groove etching method of the depth as claimed in claim 4, is characterized in that, wherein said first time etches and second time etching all uses acidic liquid to etch.
6. the two groove etching method of the depth as claimed in claim 4, it is characterized in that, the degree of depth of wherein said deep trench is 75 ~ 120um.
7. the two groove etching method of the depth as claimed in claim 4, it is characterized in that, the width of wherein said shallow trench is 200 ~ 600um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410827317.2A CN104576642A (en) | 2014-12-26 | 2014-12-26 | Deep and shallow double-trench structure and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410827317.2A CN104576642A (en) | 2014-12-26 | 2014-12-26 | Deep and shallow double-trench structure and etching method |
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| Publication Number | Publication Date |
|---|---|
| CN104576642A true CN104576642A (en) | 2015-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410827317.2A Pending CN104576642A (en) | 2014-12-26 | 2014-12-26 | Deep and shallow double-trench structure and etching method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1041379A (en) * | 1996-07-22 | 1998-02-13 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US20030013309A1 (en) * | 2001-07-13 | 2003-01-16 | Jigish Trivedi | Dual depth trench isolation |
| CN103515230A (en) * | 2012-06-19 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and formation method thereof |
| CN204303818U (en) * | 2014-12-26 | 2015-04-29 | 力特半导体（无锡）有限公司 | The two groove structure of the depth |
-
2014
- 2014-12-26 CN CN201410827317.2A patent/CN104576642A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1041379A (en) * | 1996-07-22 | 1998-02-13 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US20030013309A1 (en) * | 2001-07-13 | 2003-01-16 | Jigish Trivedi | Dual depth trench isolation |
| CN103515230A (en) * | 2012-06-19 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and formation method thereof |
| CN204303818U (en) * | 2014-12-26 | 2015-04-29 | 力特半导体（无锡）有限公司 | The two groove structure of the depth |
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Application publication date: 20150429 |
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