CN104538389A - Metal substrate LED lamp filament and preparing method thereof - Google Patents

Abstract

The invention discloses a metal substrate LED lamp filament which comprises a first electrode and a second electrode which are made of metal. The second electrode comprises an extension base body which is provided with at least one column of series LED wafers, the first electrode is mechanically connected with the tail end of the extension base body through insulation resin, and the first electrode is electrically connected with the LED wafer which is closest to the tail end of the extension base body through a metal wire. The metal substrate LED lamp filament further comprises a fluorescent powder layer wrapping all the LED wafers. The invention further discloses a preparing method of the metal substrate LED lamp filament. The mode of utilizing blue light emitted by the LED wafers in a traditional technology is changed according to the light forming feature of an LED, the utilization rate of the blue light is improved to the maximum, and the higher lighting effect output is achieved. Compared with a sapphire substrate, the mode of using metal as the substrate improves the production efficiency of the LED lamp filament and lowers the production cost.

Description

Metallic substrates LED silk and preparation method thereof

Technical field

The invention belongs to lighting field, relate to LED lamp, particularly a kind of metallic substrates LED silk and preparation method thereof.

Background technology

Light-emitting diode (LED) is a kind of semiconductor light sources, and LED has lot of advantages compared with other light source such as incandescent lamp, and LED has longer life-span, preferably stability, faster switching characteristic and lower energy consumption usually.Along with LED to go deep into the life of people day by day as light source of new generation, its application is also more and more extensive.

In synthesize white light, the most frequently used mode places material for transformation of wave length in the LED wafer of blue light-emitting, such as yellow fluorescent powder, material for transformation of wave length layer in LED wafer can absorb the photon that some LED send, and they are changed the light that (down-convert) is visible wavelength downwards, thus produce the double-colored light source with blue and yellow wavelengths light.If the gold-tinted produced and blue light have correct ratio, so human eye can experience white light.

In prior art, the initial bowl-type lamp bracket that uses is as LED wafer carrier, but there is light angle deficiency, the problem that utilization ratio is low, for reaching the object of full angle luminescence, usual use synthetic sapphire cuts into strip as filament substrate, but sapphire material is in cutting and to add man-hour easily crooked, when using fluorescent material to cover, light leak is caused because fluorescent material and sapphire substrates not easily seal completely, thus some light can not be filtered by fluorescent material, cause photochromic impure, impact illumination and visual effect.

Summary of the invention

Higher for overcoming existing LED silk cost, technology controlling and process difficulty, easy light leak causes photochromic impure technological deficiency, the invention discloses a kind of metallic substrates LED silk and preparation method thereof.

Metallic substrates LED silk of the present invention, comprise metal first electrode and the second electrode, described second electrode comprises extension matrix, described extension matrix is provided with at least one row series LED wafer, described first electrode and extension base end realize mechanical connection by insulating resin, and the first electrode realizes being electrically connected by plain conductor with near the LED wafer extending base end;

Also comprise the phosphor powder layer wrapping up whole LED wafer.

Preferably, the edge of described extension matrix is wave-like.

Concrete, described insulating resin is polyphtalamide resin plastic cement.

Preferably, described first electrode and the second electrode surface silver-plated.

Preferably, described phosphor powder layer only wraps up and extends the side that matrix is provided with LED wafer.

Concrete, described phosphor powder layer is yellowish green fluorescent powder or nitride red fluorescent powder, and described LED wafer is blue LED wafers.

Concrete, described first electrode and the second electrode material are copper.

Preferably, described phosphor powder layer surface is circular shape.

The invention also discloses a kind of metallic substrates LED silk preparation method, comprise the steps:

Sheet metal is pressed into the metal electrode of different length two kinds of specifications by S1, adopt insulating resin by sticky for two strip metal electrodes with together with;

S2 bonds LED wafer on longer metal electrode, and utilize ultrasonic wave gold thread pellet bonding machine bond wire line LED wafer to be together in series, the plain conductor of longer last wafer of metal electrode end strides across insulating resin and directly beats on shorter metal electrode;

Fluorescent glue is coated on metal electrode and wraps up LED wafer, baking-curing by S3.

Preferably, utilize tack dispensing needle head to apply during coating fluorescent glue, only coating extends side matrix being provided with LED wafer

The present invention, according to the one-tenth light characteristic of LED, changes traditional handicraft to the Land use systems of the blue light that LED wafer sends, improves the utilance of blue light to greatest extent, exports to reach higher light efficiency.Relative sapphire substrates, utilizes the mode of intermetallic composite coating electrode to reduce production cost while improve LED silk production efficiency.

Accompanying drawing explanation

Fig. 1 is metallic substrates LED silk of the present invention two electrodes and connected mode structure chart;

Fig. 2 is the schematic diagram of the present invention after bonding LED wafer;

Fig. 3 is the schematic diagram of the present invention after LED wafer being used plain conductor to connect;

Fig. 4 is the schematic diagram of the present invention after fluorescent material coating;

In figure, Reference numeral name is called: 1-first electrode 2-second electrode 3-insulating resin 4-extends matrix 5-LED wafer 6-plain conductor 7-phosphor powder layer.

Embodiment

Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.

Metallic substrates LED silk of the present invention, comprise metal first electrode and the second electrode, described second electrode comprises extension matrix, described extension matrix is provided with at least one row series LED wafer, described first electrode and extension base end realize mechanical connection by insulating resin 3, and the first electrode is by plain conductor with near the LED wafer 5 realization electrical connection extending base end;

Also comprise the phosphor powder layer 7 wrapping up whole LED wafer.

As Figure 1-3, second electrode 2 and extension matrix 4 adopt integrated metal material to make, such as copper or aluminium etc., extend on matrix and arrange plurality of LEDs wafer 5, plain conductor 6 is utilized to connect, plain conductor can select gold thread, silver-colored line, copper cash, plating palladium line etc., directly strides across middle insulating resin layer and is welded on the first electrode 1, thus form series LED loop at the plain conductor 6 of last LEDs wafer extending matrix 4 end.In use the first electrode 1 with the second electrode 2 any one can be connected positive source or negative pole.

The present invention abandons traditional bowl cup type support, adopts metal substrate as the carrier of LED wafer.Then wafer is directly bonded on metallic matrix.LED wafer is lighted rear luminescence and just can be radiated among surrounding space with the wide-angle of more than 270 °.Avoid the reflection of traditional bowl cup type support to blue light insufficient, cause luminous utilization ratio low.

The present invention adopts metallic substrates to make filament and achieves following technique effect: after 1. adopting metallic substrates, each electrode can adopt automated machine batch making, adopt metallic substrates support simultaneously, in die bond bonding wire processing procedure, overcome that traditional sapphire substrate is skew-caused welds bad and inefficiency admittedly.2. after adopting metallic matrix, because metallic matrix is opaque, fluorescent material thoroughly stops light leak after tight coated metal matrix, solves traditional sapphire substrates and causes luminous photochromic impure problem owing to wrapping up full light leak.3. adopt metallic matrix relative to sapphire substrates, reduce cost.

Insulating resin selects material high with metal bonding coefficient, still can possess certain mechanical strength under LED generates heat high temperature, such as polyphtalamide resin plastic cement.

For reaching the object that filament emits white light, blue LED wafers can be selected, the selection yellowish green fluorescent powder that phosphor powder layer is corresponding or nitride red fluorescent powder, the blue light that blue led wafer is launched, because metallic matrix is opaque, therefore phosphor powder layer only needs to wrap up the side being welded with LED wafer, thus Simplified flowsheet, conservation.As shown in Fig. 4 right-hand member, phosphor powder layer 7 cross section shape in the arc-shaped, namely phosphor powder layer 7 surface is in the arc-shaped, improves the refraction distribution consistency degree of LED wafer through phosphor powder layer.

For improving electric conductivity, prevent the oxide etch under high temperature, can be silver-plated at metal base surface.

The edge of described extension matrix is preferably set to wave-like, and the blue light that wafer sends from the gap between wave through extending matrix, can reduce the stop of substrate to the blue light that wafer sends, utilizing blue light completely to greatest extent as much as possible.

Metallic substrates LED silk of the present invention can adopt following preparation method,

Sheet metal is pressed into the metal electrode of different length two kinds of specifications, adopt insulating resin by sticky for two strip metal electrodes with together with;

Longer metal electrode bonds LED wafer, and utilize ultrasonic wave gold thread pellet bonding machine bond wire line LED wafer to be together in series, the plain conductor of longer last wafer of metal electrode end strides across insulating resin and directly beats on shorter metal electrode;

Fluorescent glue is coated on metal electrode and wraps up LED wafer, baking-curing.

Tack dispensing needle head can be utilized to apply during coating fluorescent glue, only coating extends side matrix being provided with LED wafer.Relative employing mould molding mode applies the method for fluorescent glue, change into and utilize forward type dispensing needle head that the fluorescent glue prepared is coated in the one side that metal substrate has wafer, be beneficial to the object reaching fluorescence powder half coated metal matrix, row shape in the arc-shaped, saves operation and raw material while improving Luminescence Uniformity.

Below provide the embodiment that makes metallic substrates LED silk of the present invention

1. metal electrode makes

The edge adopting mould sheet metal to be pressed into two kinds of specifications of 6mm × 1mm and 32mm × 1mm is wavy bonding jumper, respectively as the first electrode and the second electrode, then electroplates the silver layer that a layer thickness is 60 microns.Adopt after completing plating polyphtalamide resin plastic cement (PPA) by the bonding jumper of two kinds of specifications sticky and together with, but do not form loop, so that positive and negative two polarity that formation will use.

2. wafer is fixed

Adopt the extension matrix on the second electrode as the carrier of wafer, wafer is bonded in series on golden second electrode.Described LED wafer is GaN base blue light wafer, and its wavelength is respectively 450-460nm, and single rated voltage is 2.8-3.4V;

3. gold thread bonding bonding wire

Use ultrasonic wave gold thread pellet bonding machine bonding filamentary silver wafer tandem to be got up, the plain conductor of last wafer of electrode tip is directly beaten and is formed loop being cut off by polyphtalamide resin plastic cement connector on the first electrode formed.

4. coating smeared by fluorescent material

Utilize tack dispensing needle head the fluorescent glue prepared to be coated in the one side having wafer of metal substrate, the one side without wafer does not apply fluorescent glue.

5. solidify

The substrate having applied fluorescent glue is sent into oven cooking cycle solidification, just obtains the efficient white light LED silk based on metallic substrates.

Previously described is each preferred embodiment of the present invention, preferred implementation in each preferred embodiment is if not obviously contradictory or premised on a certain preferred implementation, each preferred implementation can stack combinations use arbitrarily, design parameter in described embodiment and embodiment is only the invention proof procedure in order to clear statement inventor, and be not used to limit scope of patent protection of the present invention, scope of patent protection of the present invention is still as the criterion with its claims, the equivalent structure change that every utilization specification of the present invention and accompanying drawing content are done, in like manner all should be included in protection scope of the present invention.

Claims (10)

1. metallic substrates LED silk, it is characterized in that, comprise metal first electrode and the second electrode, described second electrode comprises extension matrix, described extension matrix is provided with at least one row series LED wafer, described first electrode and extension base end realize mechanical connection by insulating resin, and the first electrode realizes being electrically connected by plain conductor with near the LED wafer extending base end;

Also comprise the phosphor powder layer wrapping up whole LED wafer.

2. metallic substrates LED silk as claimed in claim 1, it is characterized in that, the edge of described extension matrix is wave-like.

3. metallic substrates LED silk as claimed in claim 1, it is characterized in that, described insulating resin is polyphtalamide resin plastic cement.

4. metallic substrates LED silk as claimed in claim 1, is characterized in that, described first electrode and the second electrode surface silver-plated.

5. metallic substrates LED silk as claimed in claim 1, is characterized in that, described phosphor powder layer only wraps up and extends the side that matrix is provided with LED wafer.

6. metallic substrates LED silk as claimed in claim 1, it is characterized in that, described phosphor powder layer is yellowish green fluorescent powder or nitride red fluorescent powder, and described LED wafer is blue LED wafers.

7. metallic substrates LED silk as claimed in claim 1, it is characterized in that, described first electrode and the second electrode material are copper.

8. metallic substrates LED silk as claimed in claim 1, it is characterized in that, described phosphor powder layer surface is circular shape.

9. metallic substrates LED silk preparation method, is characterized in that, comprise the steps:

Sheet metal is pressed into the metal electrode of different length two kinds of specifications by S1, adopt insulating resin by sticky for two strip metal electrodes with together with;

S2 bonds LED wafer on longer metal electrode, and utilize ultrasonic wave gold thread pellet bonding machine bond wire line LED wafer to be together in series, the plain conductor of longer last wafer of metal electrode end strides across insulating resin and directly beats on shorter metal electrode;

Fluorescent glue is coated on metal electrode and wraps up LED wafer, baking-curing by S3.

10. metallic substrates LED silk preparation method as claimed in claim 9, is characterized in that, utilizes tack dispensing needle head to apply during coating fluorescent glue, and only coating extends side matrix being provided with LED wafer.