CN104521006B - 薄层太阳能电池的层系统 - Google Patents

薄层太阳能电池的层系统 Download PDF

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Publication number
CN104521006B
CN104521006B CN201380032810.9A CN201380032810A CN104521006B CN 104521006 B CN104521006 B CN 104521006B CN 201380032810 A CN201380032810 A CN 201380032810A CN 104521006 B CN104521006 B CN 104521006B
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CN
China
Prior art keywords
layer
buffer layer
halogen
absorber
buffer
Prior art date
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CN201380032810.9A
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English (en)
Chinese (zh)
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CN104521006A (zh
Inventor
J·帕尔姆
S·波尔纳
T·哈普
T·达利博尔
S·约斯特
R·迪特米勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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Saint Gobain Glass France SAS
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Publication of CN104521006A publication Critical patent/CN104521006A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201380032810.9A 2012-06-20 2013-06-19 薄层太阳能电池的层系统 Active CN104521006B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12172697.0 2012-06-20
EP12172697 2012-06-20
PCT/EP2013/062715 WO2013189971A1 (de) 2012-06-20 2013-06-19 Schichtsystem für dünnschichtsolarzellen

Publications (2)

Publication Number Publication Date
CN104521006A CN104521006A (zh) 2015-04-15
CN104521006B true CN104521006B (zh) 2017-05-03

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Application Number Title Priority Date Filing Date
CN201380032810.9A Active CN104521006B (zh) 2012-06-20 2013-06-19 薄层太阳能电池的层系统

Country Status (8)

Country Link
US (1) US20150325722A1 (https=)
EP (1) EP2865012B1 (https=)
JP (1) JP6092377B2 (https=)
KR (1) KR101698659B1 (https=)
CN (1) CN104521006B (https=)
ES (1) ES2939962T3 (https=)
IN (1) IN2014KN02865A (https=)
WO (1) WO2013189971A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160359070A1 (en) * 2015-06-02 2016-12-08 International Business Machines Corporation Controllable indium doping for high efficiency czts thin-film solar cells
JP7462690B2 (ja) * 2022-01-28 2024-04-05 キヤノントッキ株式会社 成膜装置及び成膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090194150A1 (en) * 2006-01-30 2009-08-06 Satoshi Aoki Solar cell and method for fabricating the same
CN102437237A (zh) * 2011-11-29 2012-05-02 福建钧石能源有限公司 黄铜矿型薄膜太阳能电池及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH1126790A (ja) * 1997-07-04 1999-01-29 Yazaki Corp 半導体薄膜及びその製造方法並びに薄膜太陽電池
DE19956735B4 (de) 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
FR2820241B1 (fr) 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
JP4055053B2 (ja) * 2002-03-26 2008-03-05 本田技研工業株式会社 化合物薄膜太陽電池およびその製造方法
JP2005019839A (ja) * 2003-06-27 2005-01-20 Shinko Electric Ind Co Ltd 化合物太陽電池用のｃｂｄ浴及び化合物太陽電池の製造方法
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process
DE102008017076B3 (de) * 2008-04-01 2009-09-03 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Chemisches Dampfabscheide-Verfahren unter Atmosphärendruck zur Herstellung einer n-halbleitenden Metallsulfid-Dünnschicht
DE102008024230A1 (de) * 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
CN102782853A (zh) * 2010-03-05 2012-11-14 第一太阳能有限公司 具有分级缓冲层的光伏器件
WO2012012700A1 (en) * 2010-07-23 2012-01-26 First Solar, Inc. Buffer layer formation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090194150A1 (en) * 2006-01-30 2009-08-06 Satoshi Aoki Solar cell and method for fabricating the same
CN102437237A (zh) * 2011-11-29 2012-05-02 福建钧石能源有限公司 黄铜矿型薄膜太阳能电池及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Chemical characterization of evaporated In2Sx buffer layers in Cu(In,Ga)Se2 thin-film solar cells with SNMS and SIMS;Axel eicke et.al;《surface and interface analysis》;20080326;第40卷(第3-4期);830-833页 *

Also Published As

Publication number Publication date
ES2939962T3 (es) 2023-04-28
JP2015523728A (ja) 2015-08-13
KR101698659B1 (ko) 2017-01-20
EP2865012A1 (de) 2015-04-29
WO2013189971A1 (de) 2013-12-27
US20150325722A1 (en) 2015-11-12
JP6092377B2 (ja) 2017-03-08
IN2014KN02865A (https=) 2015-05-08
EP2865012B1 (de) 2023-01-18
CN104521006A (zh) 2015-04-15
KR20150013327A (ko) 2015-02-04

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Effective date of registration: 20180116

Address after: 1047 Tu Shan Road, Bengbu, Anhui

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Patentee before: Saint-Gobain Glass France

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Address after: 233010 No. 1047 Tu Shan Road, Anhui, Bengbu

Patentee after: CHINA BUILDING MATERIALS BENGBU GLASS INDUSTRY DESIGN & RESEARCH INSTITUTE Co.,Ltd.

Address before: 233018 No. 1047 Tu Shan Road, Anhui, Bengbu

Patentee before: Bengbu Glass Industry Design and Research Institute