CN104508797A - Annealed semiconductor substrate manufacturing method, scanning device, and laser processing device - Google Patents
Annealed semiconductor substrate manufacturing method, scanning device, and laser processing device Download PDFInfo
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- CN104508797A CN104508797A CN201480002018.3A CN201480002018A CN104508797A CN 104508797 A CN104508797 A CN 104508797A CN 201480002018 A CN201480002018 A CN 201480002018A CN 104508797 A CN104508797 A CN 104508797A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
- B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
Abstract
Provided is a processing method that, when scanning a line beam and emitting the same onto a semiconductor substrate, enables highly accurate operation without making the mechanism of a scanning device for moving the semiconductor substrate complicated, and in order to make the processing method applicable to large semiconductor substrates, a semiconductor substrate supported by a support unit is processed in such a way that the semiconductor substrate is caused to move together with the support unit, thereby emitting line beams in parallel in a plurality of passes while scanning the line beams relative to the short axis direction. The processing method comprises the following: a substrate rotation step for rotating the semiconductor substrate so that the front-back position of the semiconductor substrate changes between a first emission pass step and a subsequent emission pass step and the position of the semiconductor substrate with respect to the emission position of the line beams is altered; and a substrate inclination adjustment step for adjusting the inclination of the semiconductor substrate, before the first emission pass step and after the substrate rotation step which is before the subsequent emission pass step.
Description
Technical field
The present invention relates to and a kind ofly carry out annealing in process by illuminated line light beam on a semiconductor substrate and manufacture the manufacture method of semiconductor substrate, scanning means and laser machining device.
Background technology
For the semiconductor substrate be used in liquid crystal display or OLED display, laser line beam is adopted to carry out laser treatment.The laser line beam of wide cut scans along short-axis direction, irradiates on a semiconductor substrate simultaneously, thus can efficiently carry out once processing (such as with reference to patent documentation 1).
Concrete structure is, the pedestal being provided with semiconductor substrate moves on the short-axis direction of laser line beam along guide rail etc., thus carries out the relative scanning (such as Fig. 1 of patent documentation 2) of laser line beam.
Further, for improving productivity, semiconductor substrate is maximizing gradually, by increasing the long axis length of laser line beam therewith adaptably, thus improves productivity.
But for laser line beam, will carry out shaping in limited energy to the section configuration of light beam, therefore also there is the limit in the expansion of long axis length.Therefore, a kind of not with single path irradiating laser Line beam on a semiconductor substrate, but irradiate side by side with multipath, the method that the whole face of maximization semiconductor substrate processes is practical.In this multipath illuminating method, need be different from the scanning direction of carrying out laser annealing process, the direction that intersects with scanning direction is arranged another shifting axle of pedestal movement can be made to move semiconductor substrate.With the change of irradiation position between multipath accordingly, the stroke of this shifting axle can reach more than the long axis length of Line beam.
That is, in the irradiation of multipath, as shown in Figure 10 (a), the pedestal S with XY axle is needed.At this moment, XY pedestal is configured to its X-axis and Y-axis is positioned at above-below direction, is so-called stacked pedestal.
When adopting this stacked pedestal to carry out on a semiconductor substrate irradiating with two paths, as Figure 10 (b) be shown in first path of half (depicted area A) upper illuminated line light beam L of the Y-direction of semiconductor substrate 100.At this moment pedestal S moves along X-axis, thus can relatively scan line light beam L.On the A of region after illuminated line light beam L, as shown in Figure 10 (c), move semiconductor substrate 100 in Y direction, second path of remaining in the Y-direction of semiconductor substrate 100 further half (depicted area B) upper illuminated line light beam L.At this moment pedestal S can move along X-axis, thus can relatively scan line light beam L.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 11-251261 publication
Patent documentation 2: Japanese Patent Laid-Open 2004-64066 publication
Summary of the invention
Invent technical problem to be solved
Here, the semiconductor substrate as handling object further maximizes, and also wishes process G8 type substrate.Because semiconductor substrate becomes large, in optical system characteristics, image field curvature (field curvature: curvature of the image) easily becomes large, and effective DOF (Depth of focus: depth of focus) easily narrows.And the pedestal arranging semiconductor substrate maximizes with substrate size matchingly in the lump for needing, be flatly bearing semiconductor substrate, the surface flatness for pedestal requires to improve.And then, because the path increment of pedestal also increases, the requirement of mobile accuracy is also increased, such as, make pedestal stably move.
But foregoing stacked pedestal maximizes and high accuracy because its formation of following reason 1 ~ 3 is difficult to meet simultaneously, for liquid crystal display or OLED display adopt G6 substrate (1500 × 1800mm) to be considered to the limit.
1., in stacked, such as Y-axis is in X-axis, the balance on Y-axis supporting device is poor.
2. substrate tilts in the Y direction, then produce out of focus at Line beam both ends.
3. weight balancing poor then X deflection characteristic is deteriorated.
As described above, for stacked pedestal in the past, because G6 type substrate becomes the limit, on large substrate as G7 (1900 × 2200mm), G8 (2200 × 2500mm), be difficult to make laser line beam to irradiate rightly on a semiconductor substrate and mobile foundation accurately simultaneously, reach this purpose if want, then the installation cost that pedestal relates to falls and significantly rises.
For solving the problem, have also contemplated that moving optical system part and carry out the method for the laser treatment of semiconductor substrate, but for making the performance of optical system unaffected in the method, also must prepare the pedestal that high-precision optical system moves, while optical system maximizes, quality also increases.Therefore, need to have problems in unnecessary drive division, pedestal required precision height etc. in optical system, produce problem similar to the above.
The present invention completes for background with above-mentioned situation, its object is to provide a kind of manufacture method of annealing in process semiconductor substrate, scanning means and laser machining device, can when laser line beam irradiates, alleviate the burden of the mechanism making semiconductor substrate movement, semiconductor substrate can be located accurately simultaneously.
The technical scheme that technical solution problem adopts
Namely, the 1st the present invention in the manufacture method of annealing semiconductor substrate of the present invention is the processing method of semiconductor substrate, for the semiconductor substrate of supported portion supporting, described semiconductor substrate is moved together with described support sector, in short-axis direction relative scanning and with multipath illuminated line light beam arranged side by side, process
It is characterized in that comprising: substrate rotational sequence, this operation is between an exposure pathways operation and the exposure pathways operation after it, the mode changed to make the front and back position of described semiconductor substrate and described semiconductor substrate is rotated, change the position of described semiconductor substrate relative to the irradiation position of described Line beam
Substrate tilt adjustments operation, before exposure pathways operation before a described exposure pathways operation and afterwards, after described substrate rotational sequence, this substrate tilt adjustments operation inclination to described semiconductor substrate adjusts.
By the invention described above, before an exposure pathways operation, the substrate tilt adjustments operation that is tilted through of semiconductor substrate is adjusted, and the impact of inclination disappears, and semiconductor substrate can be made to move illuminated line light beam.When Line beam irradiates, with the shadow surface shape, energy density, power density, focus etc. of the surface of semiconductor substrate for benchmark setting Line beam.Therefore scan while illuminated line light beam under the state that semiconductor substrate tilts, according to the inclination of semiconductor substrate, Line beam changes relative to the irradiation distance of semiconductor substrate, and high-precision annealing in process is difficult to implement.In the present invention, as mentioned above, before an exposure pathways operation, the inclination of semiconductor substrate is adjusted, thus high-precision annealing in process can be carried out in an exposure pathways operation.Afterwards.By substrate rotational sequence, the fore-and-aft direction of substrate is exchanged.After substrate rotational sequence, before exposure pathways operation afterwards, then the inclination of semiconductor substrate is adjusted, high-precision annealing in process can be carried out in exposure pathways operation afterwards.By repeatedly carrying out these operations, the inclination of substrate is in suitable state all the time, can carry out high-precision annealing in process.
The manufacture method of the 2nd annealing in process semiconductor substrate of the present invention, it is characterized in that the adjustment amount presetting described substrate adjustment operation in described 1st the present invention, when carrying out described substrate adjustment operation, the adjustment amount based on setting adjusts the inclination of described semiconductor substrate.
By the invention described above, by presetting tilt adjustments amount, do not need, when carrying out in rotary moving grade at every turn, to detect the operations such as necessary adjustment amount, make operation more efficient.
The manufacture method of the 3rd annealing in process semiconductor substrate of the present invention, it is characterized in that: in described 2nd the present invention, comprise substrate tilt adjustments and measure to obtain operation, this obtains the semiconductor-based Board position of operation to the described exposure pathways predetermined and infers, and obtain the substrate tilt adjustments amount of the semiconductor substrate supported by described support sector, after inferring the described rotation of described substrate rotational sequence, the semiconductor-based Board position of the exposure pathways after described in predetermining is inferred, and obtain the substrate tilt adjustments amount of the semiconductor substrate supported by described support sector.
By the invention described above, tilt adjustments amount required under the state of agreeing with actual operation can be obtained in advance, in the operation of reality, carry out suitable substrate tilt adjustments, can high-precision annealing in process be implemented.
The manufacture method of the 4th annealing in process semiconductor substrate of the present invention, it is characterized in that in described 1st ~ 3rd any one of the present invention, the described rotating shaft that is rotated through carries out, between the scanning direction center line of described rotating shaft scanning direction center line and described exposure pathways afterwards in a described exposure pathways.
By the invention described above, can simultaneously relative to scanning direction and crisscross mobile semiconductor substrate in substrate rotational sequence.If on the position of center line between the scanning direction center line of particularly described rotating shaft scanning direction center line and exposure pathways afterwards in an exposure pathways, two side positions of semiconductor substrate then can be exchanged relative to the direction intersected with scanning direction, do not move up in the side intersected with scanning direction with not needing to keep intact, can carry out Line beam irradiation yet.
The manufacture method of the 5th annealing in process semiconductor substrate of the present invention, is characterized in that, in described 1st ~ 4th any one of the present invention, described rotational sequence is undertaken by making all or part of rotation of described support sector.
By the invention described above, in substrate rotational sequence, by the support sector of rotationally supported semiconductor substrate, semiconductor substrate is rotated, with the exposure pathways operation after being ready for use on.
The manufacture method of the 6th annealing in process semiconductor substrate of the present invention, it is characterized in that, in described 1st ~ 5th any one of the present invention, described exposure pathways inter process, comprise crisscross mobile process, this crisscross mobile process makes the side that described semiconductor substrate is intersecting with described scanning direction move up.
By the invention described above, after an exposure pathways operation, semiconductor substrate can be moved to the ad-hoc location of illuminated line light beam by crisscross mobile process, with the exposure pathways operation after being ready for use on.Crisscross mobile process can be implemented before substrate rotational sequence or afterwards, when being implemented after substrate rotational sequence, preferably implements after substrate tilt adjustments operation.In addition, preferably after crisscross mobile process, before next exposure pathways operation, substrate tilt adjustments operation is implemented.
The manufacture method of the 7th annealing in process semiconductor substrate of the present invention, it is characterized in that, in described 6th the present invention, described crisscross mobile process is implemented by making described support sector move, or by making described semiconductor substrate from the part or all of disengaging of described support sector, with remaining described support sector relatively independent described semiconductor substrate is moved, again support described semiconductor substrate by the described support sector be left after mobile and implement.
By the invention described above, semiconductor substrate disengaging can be made to the crisscross movement of scanning direction, thus do not need the movement of support sector's entirety, can alleviate or eliminate the burden of support sector's movement.
8th scanning means of the present invention, is included in processing unit, and this processing unit is relative to semiconductor substrate, and relative scanning on short-axis direction also with multipath illuminated line light beam arranged side by side, is carried out the process of described semiconductor substrate, be it is characterized in that, comprising:
Support sector, described semiconductor substrate supports in this support sector,
Scanning direction moving part, this scanning direction moving part makes described support sector move on described scanning direction,
Portion in rotary moving, this portion in rotary moving rotates described semiconductor substrate, and front and back position is changed,
Substrate tilt adjustments portion, this substrate tilt adjustments portion can adjust the inclination of described substrate.
By the invention described above, by the inclination of substrate tilt adjustments portion adjustment semiconductor substrate, the semiconductor substrate after adjustment inclination is supported by support sector, is moved by scanning direction moving part.Semiconductor substrate after scanning is rotated by portion in rotary moving, and front and back position can be made to exchange, and postrotational semiconductor substrate can carry out tilt adjustments again by substrate tilt adjustments portion.Having carried out the semiconductor substrate after substrate tilt adjustments can by high-precision process in exposure pathways operation afterwards.By repeatedly carrying out these operations, the inclination of substrate is in suitable state all the time, can carry out high-precision Line beam treatment with irradiation.
9th scanning means of the present invention, is characterized in that, in described 8th the present invention, described portion in rotary moving has the mechanism that the described support sector of the described semiconductor substrate of supporting is rotated.
In the invention described above, semiconductor substrate can be rotated along with the rotation of support sector.
10th scanning means of the present invention, is characterized in that, in the described 8th or the 9th the present invention, described portion in rotary moving is arranged on the moving part of described scanning direction.
By the invention described above, complete scanning direction move after semiconductor substrate rotate by portion in rotary moving.
11st scanning means of the present invention, is characterized in that, in the described 8th or the 9th the present invention, comprises disengaging operate portions, and this disengaging operate portions makes described substrate from the part or all of disengaging of described support sector,
Described portion in rotary moving has the mechanism that the semiconductor substrate after utilizing described disengaging operate portions to depart from independently is rotated relative to remaining described support sector.
By the invention described above, the semiconductor substrate from the part or all of disengaging of support sector can be rotated by portion in rotary moving in a disengaged condition.
12nd scanning means of the present invention, it is characterized in that, in described 8th ~ 11st any one of the present invention, described portion in rotary moving has rotating shaft and can rotate, and this rotating shaft is positioned on the position after with respect to the scanning direction skew at the long side direction center irradiated by Line beam.
By the invention described above, semiconductor substrate rotates along described rotating shaft, thus can change semiconductor substrate position relative to the irradiation position of Line beam on scanning is crisscross.
13rd scanning means of the present invention, is characterized in that, in described 8th ~ 12nd any one of the present invention, comprises crisscross moving part, and this crisscross moving part makes the side that described semiconductor substrate is intersecting with described scanning direction move up.
By the invention described above, can move up in the side intersected with scanning direction before or after to semiconductor substrate illuminated line light beam semiconductor substrate.
14th scanning direction of the present invention, is characterized in that, in described 8th ~ 13rd any one of the present invention, comprise control part, this control part controls described scanning direction moving part, described portion in rotary moving, described substrate tilt adjustments portion,
Described control part, before the described Line beam of employing carries out an exposure pathways, control the described inclination of substrate tilt adjustments portion to described substrate to adjust, described one between exposure pathways and exposure pathways afterwards, controlling described portion in rotary moving makes this semiconductor substrate rotate in the mode making the front and back position of described semiconductor substrate and change, control the described inclination of substrate tilt adjustments portion to described substrate to adjust, afterwards, illuminated line light beam and control described scanning direction moving part and make described support sector be implemented in the action of movement on described scanning direction.
By the invention described above, after Line beam pre-irradiation or Line beam pre-irradiation and semiconductor substrate rotate, suitable adjustment can be carried out to the inclination of semiconductor substrate, can high-precision annealing in process be carried out.
15th scanning means of the present invention, is characterized in that, in described 8th ~ 14th any one of the present invention, described substrate tilt adjustments portion has adjusting mechanism, and this adjusting mechanism can adjust the spindle angle of the universal-joint spindle of the described support sector of supporting.
By the invention described above, the spindle angle of the universal-joint spindle of the described support sector of supporting is adjusted, thus can adjust the angle of inclination of semiconductor substrate.
16th scanning means of the present invention, is characterized in that, in described 8th ~ 14th any one of the present invention, described substrate tilt adjustments portion has multiple adjustment component, and this adjustment component multiple changes the seating surface height of described support sector on different positions.
With crossing the invention described above, by the inclination of multiple adjustment component adjustment support sector, thus can adjust the inclination of semiconductor substrate.
17th laser machining device of the present invention, for semiconductor substrate, relative scanning on short-axis direction also with multipath irradiating laser Line beam arranged side by side, is carried out the process of described semiconductor substrate, be it is characterized in that, comprising:
The scanning means recorded in 8th ~ 16th any one of the present invention,
Laser oscillator, this laser oscillator exports described laser,
Optical system, described laser reconditioning is Line beam shape and is guided to the semiconductor substrate as handling object by this optical system.
By the invention described above, the inclination of semiconductor substrate can be made suitably to be revised, irradiating laser Line beam, carry out the Line beam treatment with irradiation that precision is good.
Invention effect
As mentioned above, pass through the present invention, even if for the maximization of semiconductor substrate, also can in the burden to alleviate the device making semiconductor substrate movement during multipath illuminated line light beam, high-precision scanning can be carried out, and when laser irradiates with high position precision irradiating laser on a semiconductor substrate, good Line beam treatment with irradiation can be carried out.In addition, scanning means can realize miniaturization, and external vibration also can diminish on the impact of irradiating result.
Accompanying drawing explanation
Fig. 1 shows the scanning means of an embodiment of the invention and comprises the concise and to the point figure of laser machining device of an execution mode of this scanning means.
Fig. 2 is the profile of the details similarly illustrating the partial adjustment portion carrying out substrate tilt adjustments.
Fig. 3 is the figure of the manufacturing process similarly illustrating annealing in process semiconductor substrate.
Fig. 4 is the flow chart of the step similarly illustrated in the manufacturing process of annealing in process semiconductor substrate.
Fig. 5 is the flow chart obtaining step similarly illustrating adjustment amount in substrate tilt adjustments.
Fig. 6 shows the concise and to the point figure of the scanning means of another embodiment of the present invention.
Fig. 7 is the figure of the manufacturing process similarly illustrating annealing in process semiconductor substrate.
Fig. 8 is the flow chart of the step of the manufacturing process similarly illustrating annealing in process semiconductor substrate.
Fig. 9 is the figure of the synthesis example that laser is described.
Figure 10 is the figure that scanning means in the past and action are described.
Embodiment
Below, based on Fig. 1, the scanning means that an embodiment of the invention relate to is described with the laser machining device comprising this scanning means.
Laser machining device 1 comprises process chamber 2, arranges scanning means 3 in process chamber 2.Scanning means 3 comprises: scanning direction moving part 30, and this scanning direction moving part 30 can be upper mobile in X-direction (scanning direction); Portion 32 in rotary moving, this portion 32 in rotary moving is arranged on this scanning direction moving part 30, with scanning direction moving part 30 movement jointly, the pedestal 4 of the planar rectangular being arranged on top can be made to rotate.Pedestal 4 is equivalent to support sector of the present invention.Have multiple partial adjustment portion 5 between portion 32 in rotary moving and pedestal 4, on four angles of pedestal 4, pedestal 4 is bearing in portion 32 in rotary moving by the plurality of partial adjustment portion 5.Partial adjustment portion 5 is equivalent to adjustment component of the present invention, and multiple partial adjustment portion 5 forms substrate tilt adjustments portion of the present invention.
Scanning direction moving part 30 is arranged on the basal disc of process chamber 2, and extend to X-direction, can move along guide rail 31, be driven by not shown motor etc., portion 32 in rotary moving and pedestal 4 can move in a scanning direction.
Portion 32 in rotary moving has the rotating shaft with pedestal 4 central coaxial, the mode exchanged to make the fore-and-aft direction of pedestal 4 relative to scanning direction and pedestal 4 is rotated.
In addition, in process chamber 2, be provided with importing window 6 and Line beam is imported from outside.From the Line beam that importing window 6 imports in process chamber 2, be positioned on the position of departing to the Y-direction orthogonal with X-direction relative to pedestal 4, make Line beam long axis direction one end part in the immediate vicinity of pedestal 4.Configuration etc. by changing following optical system 12 adjusts the long axis direction position of Line beam.
During laser treatment, as semiconductor substrate, the semiconductor substrate 100 that the central authorities of pedestal 4 obtain after being provided with and forming amorphous silicon film 100b etc. on glass substrate 100a etc.
In addition, in the processing unit of present embodiment, the related content of the laser annealing process being made amorphous film crystallization by laser treatment is illustrated, but the content of laser treatment is not limited thereto in the present invention, such as, also can be allow the semiconductor film single crystallization of on-monocrystalline, carry out the upgrading of crystalline semiconductor film.In addition, also can relate to the content of other process, treated object is not restricted to individually defined thing.
The outer setting of process chamber 2 has LASER Light Source 10.LASER Light Source 10 be pulsed oscillation laser, continuous oscillation laser one of them, the present invention is not defined as wherein a kind of.
As required, the laser 15 exported in this LASER Light Source 10 adjusts energy density by attenuator 11, in the optical system 12 comprising speculum 12a, 12b etc., carry out finishing or the deflection of Line beam shape, make the long axis length of its shape be more than 1/2 of semiconductor substrate 100 width in the Y direction.In addition, the optics forming optical system 12 is not limited to foregoing, can comprise various lens, speculum, waveguide portion etc.
In addition, in laser machining device 1, comprise control part 7, this control part 7 gated sweep device 3, LASER Light Source 10.Control part 7 by CPU, the program of its work, memory portion etc. are formed.
Then, based on Fig. 2 (a), the details in partial adjustment portion 5 is described.
Partial adjustment portion 5 has the part support sector 50 be present between portion 32 in rotary moving and pedestal 4, and this part support sector 50 can supporting base 4.Part support sector 50 has wedge shape vertical section, its lower surface is the plane along portion 32 in rotary moving upper surface, upper surface is the inclined plane of rising from Inside To Outside, by being arranged on the adjustment part drive division 51 on the lateral surface in portion 32 in rotary moving, can move in inward-outward direction.In addition, four angle lower surfaces of pedestal 4 have the conical surface 40, and this conical surface 40 is along the upper surface of part support sector 50, and part support sector 50 can slide relative to the upper surface in portion 32 in rotary moving and the conical surface 40.
Then, be described based on the action for above-mentioned laser machining device 1 of the concise and to the point process chart of Fig. 3 and the flow chart of Fig. 4.In addition, following step is implemented by control part 7.
First, the semiconductor substrate 100 be accommodated in not shown plate casket is placed in process chamber 2, is arranged on the central authorities (step s1) of pedestal 4.
Then, as shown in Fig. 3 (a), adjusted with the inclination of the adjustment amount preset to pedestal 4 by the action in multiple partial adjustment portion 5.The inclination of the semiconductor substrate 100 thus on pedestal 4 is adjusted (step s2).
Be specially, part support sector 50 makes the part of the pedestal 4 be in contact with it change upper-lower position by advancing to the inside or retreating laterally, and result makes the inclination of pedestal 4 be adjusted.By suitably determining the adjustment amount that each several part adjustment part 5 is respective, the inclination of pedestal 4 more critically can be changed.In addition, Fig. 2 (b) central branch is held portion 50 and is advanced to the inside by the action of adjustment part drive division 51, the part of the pedestal 4 be in contact with it is in upward status, Fig. 2 (c) is shown and is retreated laterally by the action part support sector 50 of adjustment part drive division 51, and the part of the pedestal 4 be in contact with it is decline state.
After substrate adjustment operation, carry out laser treatment (step s3).The laser 15 exported in LASER Light Source 10 in laser treatment, is adjusted its pulse energy density by attenuator 11.Attenuator 11 is set to specific attenuation rate, adjusts attenuation rate in the mode obtaining specific energy density or power density on the shadow surface of semiconductor film.
Through the laser 15 of attenuator 11, be trimmed to Line beam shape by optical system 12, be directed to the importing window 6 be arranged on process chamber 2.It is inner that Line beam 150 is imported into process chamber 2 through importing window 6, and as shown in Fig. 3 (b), the irradiation position of Line beam 150 is the scope of half of the side covered in the Y-direction of semiconductor substrate 100.Because the scanning direction moving part 30 of scanning means 3 moves along guide rail 31, semiconductor substrate 100 and pedestal 4 together move in the X direction.Moved by this, in the first path, relative scanning is carried out between the end of Line beam 150 in the X-direction of semiconductor substrate 100 and the other end, simultaneously, be irradiated to semiconductor substrate 100, thus semiconductor substrate 100 half face is in the Y direction processed (Fig. 3 (c), step s3), semiconductor substrate 100 half face in the Y direction becomes irradiation area 101, and half remaining face becomes non-irradiated regions 102.
Then, judge (step s4) to the whole surface irradiation laser of semiconductor substrate 100 whether completing, if do not complete to the whole surface irradiation laser of semiconductor substrate 100 (step s4, no), scanning direction moving part 30 stops, portion 32 in rotary moving is driven in this position, the pedestal 4 supported by portion 32 in rotary moving and semiconductor substrate 100 are together revolved turnback, and the front and back position of semiconductor substrate 100 is exchanged (Fig. 3 (d), step s5).Exchanged in the Y direction by the irradiation area 101 of this rotating semiconductor substrate 100 and non-irradiated regions 102, the non-irradiated regions 102 irradiation position side at Line beam 150 in place.
Laser pre-irradiation, as shown in Fig. 3 (e), is adjusted with the inclination of the adjustment amount preset to pedestal 4 by the action in multiple partial adjustment portion 5.The inclination of the semiconductor substrate 100 thus on pedestal 4 is adjusted (step s6).At this moment adjustment amount, can be different from Fig. 3 (a) Suo Shi, use other adjustment amount.
After tilt adjustments, by scanning direction moving part 30, pedestal 4 is moved (Fig. 3 (f)) together with portion 32 in rotary moving along guide rail 31 to-X-direction.At this moment on semiconductor substrate 100, Line beam 150 carries out relative scanning with the second path and irradiates simultaneously, in the Y-direction being equivalent to semiconductor substrate 100, the non-irradiated regions 102 of half is processed, and whole face becomes irradiation area 101 (Fig. 3 (g), step s3).
Whole by above-mentioned steps semiconductor substrate 100 has been processed by the second path, and based on the result of determination processed (step s4, be), by semiconductor substrate 100 Returning plate casket (step s7), process terminates.
In addition, based on the flow chart of Fig. 5, measure operation is described for step, i.e. the substrate tilt adjustments obtaining adjustment amount in advance.
First, semiconductor substrate sample is put into process chamber 2, be arranged on the central authorities (step s10) of pedestal 4, detected the tilt quantity (step s11) of semiconductor substrate sample by multiple optical pickocffs etc.Then, tilt quantity and the acceptable threshold preset are compared, whether acceptable threshold is exceeded to tilt quantity and judges (step s12).Acceptable threshold can predetermine, or also can be set by operator.In addition, due to the difference such as kind or size of the semiconductor substrate as handling object, also different acceptable threshold can be prepared.
When tilt quantity does not exceed acceptable threshold (step s12, no), carry out adjustment amount setting, adjustment amount is set to 0 (step s14), process terminates.When tilt quantity exceedes acceptable threshold (step s12, be), calculate the adjustment amount (step s13) in each several part adjustment part, carry out adjustment amount setting (step s14) based on result of calculation, process terminates.
In above-mentioned execution mode, the position of centre of gravity of pedestal 4 and semiconductor substrate 100 can be made not change by the rotation of pedestal 4 and complete process, Line beam irradiation is carried out under the state of inclination adjusting semiconductor substrate 100, thus accurately Line beam can be irradiated to semiconductor substrate, carry out annealing in process.And owing to not having Y-direction shifting axle, do not need complicated travel mechanism, scanning means can be formed compactly, ensures that the mobile accuracy of pedestal is higher simultaneously.
In addition, by the rotation that portion 32 in rotary moving carries out, do not limit the position that pedestal 4 is residing in the X direction, also can after the first path have been irradiated, after pedestal 4 gets back to the initial position of X-direction by scanning direction moving part 30, portion 32 in rotary moving makes pedestal 4 revolve turnback, then, pedestal 4 is moved to X-direction, relative scanning Line beam 150, carry out the second path irradiation simultaneously.
(execution mode 2)
In above-mentioned execution mode, be illustrated to semiconductor substrate illuminated line light beam arranged side by side for two paths, in the present invention, also can carry out the irradiation arranged side by side in more than three paths.
Be described with the apparatus structure of three path illuminated line light beams arranged side by side based on Fig. 6 below.In addition, prosign is marked with the same structure of described each execution mode in explanation.
In the scanning means 3a of this execution mode, scanning direction moving part 30 can move in the X direction on guide rail 31, on scanning direction moving part 30, above scanning direction moving part 30, the direction intersected with scanning direction (being Y-direction in which) is provided with guide rail 33a, being provided with along this guide rail 33a can the crisscross moving part 33b of movement in the Y direction.Crisscross moving part 33b is provided with portion 32a in rotary moving, rotatably via multiple partial adjustment portion 5, pedestal 4 is arranged in portion 32 in rotary moving.
In this execution mode 2,32a rotation amount in portion in rotary moving be 0, crisscross moving part 33b be positioned at Y-direction center state under, Line beam 150 to be decided to be in the Y-direction that can be irradiated to the semiconductor substrate 100 be arranged on pedestal 4 in 1/3 width end.
Then, be described based on the action for execution mode 2 of the concise and to the point process chart of Fig. 7 and the flow chart of Fig. 8.Following step is controlled by control part.
The semiconductor substrate 100 be collected in plate casket do not gone out in figure etc. is placed in process chamber 2, is arranged on and is positioned at (Fig. 7 (a), step s30) on the pedestal 4 of initial position.At this moment, by crisscross moving part 33b in advance pedestal 4 is moved into from X-direction disalignment semiconductor substrate 4 in the Y direction 1/3 width.The irradiation position of Line beam 150 is set to the central authorities at scanning direction moving part 33b.Under the state that semiconductor substrate 100 is placed into process chamber 2, by making pedestal 4 position offset, thus 1/3 width band of three 1/3 width band medial end portions in the Y-direction making Line beam 15 be irradiated to semiconductor substrate 100.
Then, adjusted (Fig. 7 (b), step s31) with the inclination of the adjustment amount preset to semiconductor 100 by the action of part adjustment part 5.Oblique arrow in figure illustrates the movement of its above-below direction.
Then, pedestal 4 moves to X-direction, and isochrone light beam 150 irradiates (step s32) to semiconductor substrate 100.Line beam 150 is irradiated to 1/3 width band of the Y-direction upper end of semiconductor substrate 100, move to X-direction by allowing pedestal 4,1/3 upper Line beam 150 of the Y-direction of semiconductor substrate 100 carries out relative scanning and simultaneously illuminated, 1/3 of semiconductor substrate 100 is processed with the first path, become irradiation area 101, other is non-irradiated regions 102 (Fig. 7 (c)).
Then, pedestal 4 gets back to X-direction initial position (Fig. 7 (d)) by scanning direction moving part 30, has determined whether the whole surface irradiation laser (step s33) to semiconductor substrate 100.In described judgement, when laser to whole of semiconductor substrate 100 irradiates and does not complete (step s33, no), judge to complete which path (step s34), when first path completes (step s34, the first path complete), prepare the second path, by crisscross moving part 33b, semiconductor substrate 100 is moved 1/3 width size to Y-direction, make 1/3 width band of the central authorities of semiconductor substrate 100 in place on the irradiation position of Line beam 150.
Then, adjusted (Fig. 7 (f), step s31) with the inclination of the adjustment amount preset to semiconductor substrate 100 by the action of part adjustment part 5, afterwards, pedestal 4 moves to X-direction, and isochrone light beam 150 carries out irradiating (step s32).By illuminated line light beam 150 on 1/3 width band of the central authorities at semiconductor substrate 100, and allow pedestal 4 move to X-direction, thus on 1/3 of the Y-direction of semiconductor substrate 100 relative scanning illuminated line light beam 150,1/3 of the central authorities of semiconductor substrate 100 is processed with the second path, becomes irradiation area 101 (Fig. 7 (g)).
Then, pedestal 4 gets back to X-direction initial position by scanning direction moving part 30, determine whether the whole surface irradiation laser (step s33) to semiconductor substrate 100, (step s33 when laser to whole of semiconductor substrate 100 irradiates and do not complete, no), judge to complete which path (step s34), (step s34 when second path completes, second path completes), prepare the 3rd path, by portion 32 in rotary moving, pedestal 4 is revolved turnback, the front and back position of semiconductor substrate 100 is made to change (Fig. 7 (h), step s36).At this moment pivot, with the central coaxial of pedestal 4.
Afterwards, by crisscross moving part 33b, pedestal 4 is moved the 1/3 width size (Fig. 7 (i), step s37) of semiconductor substrate to-Y-direction.
Then, adjusted (Fig. 7 (j), step s31) with the inclination of the adjustment amount preset to semiconductor substrate 100 by the action of part adjustment part 5, moved to X-direction by pedestal 4, isochrone light beam 150 carries out irradiating (Fig. 7 (k), step s32).Line beam 150 is radiated on 1/3 width band of the Y-direction end of pedestal 4, relative scanning on 1/3 remaining in the Y-direction of semiconductor substrate 100 illuminated line light beam 150 simultaneously, 1/3 of semiconductor substrate 100 is processed with the 3rd path, becomes irradiation area 101 (Fig. 7 (L)).Whole the Line beam by three paths of semiconductor substrate 100 irradiates processed thus.
Afterwards, be judged to be that process completes (step s33, be) processing (step s33) in the judgement that whether completes, semiconductor substrate 100 is returned not shown plate casket (step s38), process terminates.
In above-mentioned execution mode, be after moving towards the direction intersected with scanning direction or in rotary moving after carry out substrate tilt adjustments, use and the adjustment amount that set corresponding with each substrate position in this substrate tilt adjustments.This is because be not only in rotary moving, in crisscross movement, the inclination of substrate also can change.
In addition, be illustrated for the scheme of the irradiation process with three paths in above-mentioned execution mode, but in the present invention, the quantity of irradiation process is not specially limited.
In addition, in this execution mode, have the mechanism making pedestal movement in the Y direction, in rotary moving amount of movement in Y-direction is reduced by combining in this situation, scanning means does not need complicated, and the pedestal that can carry out precision good moves yet.
In addition, rotation and the level of pedestal are not limited to specific period in period, the rotation of execution pedestal suitable between exposure pathways and level period, the displacement of Y direction can be made to reduce, carry out multipath laser treatment.
Further, in described each execution mode, the tilt adjustments implementing substrate is illustrated, but also can detects heeling condition at every turn or when expecting, carry out tilt adjustments corresponding to this heeling condition based on the adjustment amount preset.
In the respective embodiments described above, semiconductor substrate is irradiated to the Line beam produced by the laser exported from a LASER Light Source and is illustrated, but also the laser exported from multiple LASER Light Source can be synthesized, thus obtain Line beam.
It is the example of a Line beam that Fig. 9 shows two Laser synthesizing.
Such as, supported by support 122,123 in optical system and be set up in parallel two opticses 120,121, laser is guided to respectively optics 120,121, the Line beam 151,152 exported synthesizes further, can obtain the elongated Line beam of long axis length 150.In this situation, for the intensity of Line beam 151,152, in the long axis direction end be connected with smooth par, there is the rake that intensity diminishes laterally gradually, by allowing rake overlap, between the 150a of par, forming connection part.In Fig. 9 (a), by setting the distance of the inclination of rake and the long axis direction end of Line beam 151,152, being formed and making the even shape that the intensity of connection part is identical with the intensity of par 150a.But the intensity of connection part is not limited thereto, also can forms teat 150b or as Suo Shi Fig. 9 (c), form lower teat 150c as Suo Shi Fig. 9 (b).Do not form on a semiconductor substrate in the part of device as long as connection part is arranged, then can not become obstacle.In addition, as long as upper teat 150b or lower teat 150c is less relative to the Strength Changes of par 150a, then obstacle can not be become.Thus the Strength Changes part preferred long axis direction width of connection part or Strength Changes amount less.
In addition, in the respective embodiments described above, the tilt adjustments describing substrate is implemented by partial adjustment portion, but the present invention does not limit the mechanism of tilt adjustments, as long as can reach the adjustment of expectation, is not then particularly limited for the structure of mechanism or kind.
In addition, in the respective embodiments described above, to the laser machining device irradiating laser line beam, and the scanning means included by this laser machining device is illustrated, but Line beam is not defined as and is produced by laser in the present invention, other quantum wire light beam also can be applicable equally.As processing unit, the device of the process such as activate for the crystallization of non-single crystal semiconductor or single crystallization, impurity can be listed.
Describe the present invention based on above-mentioned execution mode pin above, the present invention is not limited to the content of above-mentioned execution mode, can do suitable change without departing from the present invention.
Label declaration
1 laser machining device
2 process chambers
3 scanning means
4 pedestals
5 partial adjustment portions
10 LASER Light Source
11 attenuators
15 laser
30 scanning direction moving parts
31 guide rails
32 portions in rotary moving
32a portion in rotary moving
33a guide rail
The crisscross moving part of 33b
100 semiconductor substrates
150 Line beams
Claims (17)
1. the manufacture method of an annealing in process semiconductor substrate, relative to the semiconductor substrate of supported portion supporting, by moving described semiconductor substrate together with described support sector, relative scanning on short-axis direction with multipath illuminated line light beam arranged side by side, process, it is characterized in that, described manufacture method comprises:
Substrate rotational sequence, this operation is between an exposure pathways operation and the exposure pathways operation after it, in the mode making the front and back position of described semiconductor substrate change, described semiconductor substrate is rotated, change the position of described semiconductor substrate relative to the irradiation position of described Line beam
Substrate tilt adjustments operation, before exposure pathways operation before a described exposure pathways operation and afterwards, after described substrate rotational sequence, this substrate tilt adjustments operation inclination to described semiconductor substrate adjusts.
2. the manufacture method of annealing in process semiconductor substrate as claimed in claim 1, is characterized in that: the adjustment amount presetting described substrate adjustment operation, and when carrying out described substrate adjustment operation, the adjustment amount based on setting adjusts the inclination of described semiconductor substrate.
3. the manufacture method of annealing in process semiconductor substrate as claimed in claim 2, it is characterized in that: comprise substrate tilt adjustments and measure to obtain operation, this obtains the semiconductor-based Board position of operation to the described exposure pathways predetermined and infers, and obtain the substrate tilt adjustments amount of the semiconductor substrate supported by described support sector, after inferring the described rotation of described substrate rotational sequence, the semiconductor-based Board position of the exposure pathways after described in predetermining is inferred, and obtains the substrate tilt adjustments amount of the semiconductor substrate supported by described support sector.
4. the manufacture method of the annealing in process semiconductor substrate according to any one of claims 1 to 3, it is characterized in that: described in be rotated through rotating shaft and carry out, between the scanning direction center line of this rotating shaft in a described exposure pathways and the scanning direction center line of described exposure pathways afterwards.
5. the manufacture method of the annealing in process semiconductor substrate according to any one of Claims 1 to 4, is characterized in that: described rotational sequence is implemented by making all or part of rotation of described support sector.
6. the manufacture method of the annealing in process semiconductor substrate according to any one of Claims 1 to 5, it is characterized in that: comprise crisscross mobile process, between described exposure pathways operation, this crisscross mobile process makes described semiconductor substrate move to the direction intersected with described scanning direction.
7. the manufacture method of annealing in process semiconductor substrate as claimed in claim 6, it is characterized in that: described crisscross mobile process is implemented by making described support sector move, or by making described semiconductor substrate from the part or all of disengaging of described support sector, with remaining described support sector relatively independent described semiconductor substrate is moved, again support described semiconductor substrate by the described support sector be left after mobile and implement.
8. a scanning means, is included in processing unit, and this processing unit is relative to semiconductor substrate, relative scanning on short-axis direction with multipath illuminated line light beam arranged side by side, carry out the process of described semiconductor substrate, it is characterized in that, described scanning means comprises:
Support sector, described semiconductor substrate supports in this support sector,
Scanning direction moving part, this scanning direction moving part makes described support sector move on described scanning direction,
Portion in rotary moving, this portion in rotary moving rotates described semiconductor substrate, and front and back position is changed,
Substrate tilt adjustments portion, this substrate tilt adjustments portion can adjust the inclination of described substrate.
9. scanning means as claimed in claim 8, is characterized in that: described portion in rotary moving comprises the mechanism that the described support sector of the described semiconductor substrate of supporting is rotated.
10. scanning means as claimed in claim 8 or 9, is characterized in that: described portion in rotary moving is arranged on the moving part of described scanning direction.
Scanning means described in 11. claims 8 or 9, is characterized in that: comprise disengaging operate portions, and this disengaging operate portions makes described substrate from the part or all of disengaging of described support sector,
Described portion in rotary moving has the mechanism that the semiconductor substrate after utilizing described disengaging operate portions to depart from independently is rotated relative to remaining described support sector.
12. scanning means according to any one of claim 8 ~ 11, it is characterized in that: described portion in rotary moving has rotating shaft and can rotate, this rotating shaft is positioned on the position after with respect to the scanning direction skew at the long side direction center of the described Line beam irradiated.
13. scanning means according to any one of claim 8 ~ 12, is characterized in that: comprise crisscross moving part, and this crisscross moving part makes the side that described semiconductor substrate is intersecting with described scanning direction move up.
14. scanning means according to any one of claim 8 ~ 13, it is characterized in that: comprise control part, this control part controls described scanning direction moving part, described portion in rotary moving, described substrate tilt adjustments portion,
Described control part, before the described Line beam of employing carries out an exposure pathways, control the described inclination of substrate tilt adjustments portion to described substrate to adjust, at described one between exposure pathways and exposure pathways afterwards, controlling described portion in rotary moving makes this semiconductor substrate rotate in the mode making the front and back position of described semiconductor substrate and change, control the described inclination of substrate tilt adjustments portion to described substrate to adjust, afterwards, illuminated line light beam and control described scanning direction moving part and make described support sector be implemented in the action of movement on described scanning direction.
15. scanning means according to any one of claim 8 ~ 14, is characterized in that: described substrate tilt adjustments portion has adjusting mechanism, and the spindle angle of this adjusting mechanism to the universal-joint spindle of the described support sector of supporting adjusts.
16. scanning means according to any one of claim 8 ~ 14, is characterized in that: described substrate tilt adjustments portion has multiple adjustment component, and this adjustment component multiple changes the seating surface height of described support sector on different positions.
17. 1 kinds of laser machining devices, this processing unit relative to semiconductor substrate, relative scanning on short-axis direction with multipath irradiating laser Line beam arranged side by side, carry out the process of described semiconductor substrate, it is characterized in that, described laser machining device comprises:
Scanning means according to any one of claim 8 ~ 16,
Laser oscillator, this laser oscillator exports described laser,
Optical system, described laser reconditioning is Line beam shape and is guided to the semiconductor substrate as handling object by this optical system.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-058980 | 2013-03-21 | ||
| JP2013058980A JP5843292B2 (en) | 2013-03-21 | 2013-03-21 | Annealing semiconductor substrate manufacturing method, scanning apparatus, and laser processing apparatus |
| PCT/JP2014/053934 WO2014148182A1 (en) | 2013-03-21 | 2014-02-19 | Annealed semiconductor substrate manufacturing method, scanning device, and laser processing device |
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| CN104508797A true CN104508797A (en) | 2015-04-08 |
| CN104508797B CN104508797B (en) | 2017-05-03 |
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| JP (1) | JP5843292B2 (en) |
| KR (1) | KR102189427B1 (en) |
| CN (1) | CN104508797B (en) |
| WO (1) | WO2014148182A1 (en) |
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| CN109690739A (en) * | 2016-09-21 | 2019-04-26 | 株式会社日本制钢所 | Laser irradiation device, laser irradiating method and method, semi-conductor device manufacturing method |
| CN109863577A (en) * | 2016-10-20 | 2019-06-07 | 株式会社日本制钢所 | Manufacturing method, laser annealing base station and the laser annealing processing unit of annealing handled object |
| CN109922919A (en) * | 2016-11-03 | 2019-06-21 | 株式会社半导体能源研究所 | Laser processing device, laminated body processing unit (plant) and laser processing |
| CN111918747A (en) * | 2018-03-30 | 2020-11-10 | 东京毅力科创株式会社 | Laser processing apparatus and laser processing method |
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| WO2016156181A1 (en) * | 2015-04-01 | 2016-10-06 | Siemens Aktiengesellschaft | Alignment station for long goods having multiple movable carrier elements |
| JP6968243B2 (en) * | 2016-10-14 | 2021-11-17 | 株式会社日本製鋼所 | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
| JP7083645B2 (en) * | 2018-01-11 | 2022-06-13 | Ｊｓｗアクティナシステム株式会社 | Laser processing equipment, laser processing method and manufacturing method of semiconductor equipment |
| JP7095166B2 (en) * | 2020-08-21 | 2022-07-04 | Ｊｓｗアクティナシステム株式会社 | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
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Also Published As
| Publication number | Publication date |
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| JP5843292B2 (en) | 2016-01-13 |
| CN104508797B (en) | 2017-05-03 |
| KR20150133119A (en) | 2015-11-27 |
| JP2014187066A (en) | 2014-10-02 |
| WO2014148182A1 (en) | 2014-09-25 |
| KR102189427B1 (en) | 2020-12-11 |
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