CN109863577A - Manufacturing method, laser annealing base station and the laser annealing processing unit of annealing handled object - Google Patents
Manufacturing method, laser annealing base station and the laser annealing processing unit of annealing handled object Download PDFInfo
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- CN109863577A CN109863577A CN201780064612.9A CN201780064612A CN109863577A CN 109863577 A CN109863577 A CN 109863577A CN 201780064612 A CN201780064612 A CN 201780064612A CN 109863577 A CN109863577 A CN 109863577A
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- base station
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- 238000005224 laser annealing Methods 0.000 title claims abstract description 46
- 238000012545 processing Methods 0.000 title claims abstract description 32
- 238000000137 annealing Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 10
- 238000007664 blowing Methods 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 58
- 239000004065 semiconductor Substances 0.000 description 54
- 239000007789 gas Substances 0.000 description 15
- 238000005507 spraying Methods 0.000 description 6
- 238000013532 laser treatment Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
- B23K26/103—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam the laser beam rotating around the fixed workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides manufacturing method, laser annealing base station and the laser annealing processing unit of a kind of handled object of annealing.Wherein, the manufacturing method of handled object irradiates laser to handled object to carry out the annealing of the handled object, comprising: supports the holding step of handled object；And the irradiating step of the laser is irradiated to the handled object of bearing, in the holding step, at least in the irradiation area to handled object irradiation laser, the handled object is supported using the cam member of upper end level position is adjusted by rotation position.
Description
Technical field
It the present invention relates to the use of laser to be irradiated and implement the manufacturing method of the annealing handled object of annealing, bearing
The laser annealing base station of the handled object and the laser annealing processing unit that laser annealing processing is carried out to handled object.
Background technique
In existing laser annealing processing unit, when carrying out laser annealing processing, by laser processing object setting
Laser is irradiated on sample platform and to laser processing object, sample platform is made according to the size of laser processing object.And
And laser processing object is constantly enlarged recently, as the laser processing object sample platform that becomes larger also becomes larger.Therefore, weight,
The flatness on surface, it is mobile when shaking, it is mobile when speed deviation situations such as be deteriorated, it is difficult to maintain in laser treatment and want
The specification asked.Especially, laser annealing processing unit is used for the display of the high performance such as OLED or LCD high-definition, it is desirable that
Performance becomes higher, and in the laser processing of the substrate of large substrate, especially 2m or more, sample platform is difficult to meet laser processing
Required specification.Focus and photograph for example, if the surface smoothness of laser processing object is impaired, when irradiating laser sometimes
The relationship for penetrating position deviates, and annealing effect can be uneven according to different location.
In this regard, for example, proposing a kind of manufacturing device in patent document 1, comprising: the transmission with multiple rollers is located
Manage object roller transmission unit；And the laser processing device for being handled object processed, laser processing
Device has laser oscillator and autofocus mechanism, and laser oscillator is connected with autofocus mechanism, can will shake from laser
It swings the laser beam that device oscillation generates and is irradiated to the surface of object processed via autofocus mechanism to be handled.
Existing technical literature
Patent document
Patent document 1: Japanese Patent Laid-Open 2010-89142 bulletin
Summary of the invention
The technical problems to be solved by the invention
However, being documented in the device of patent document 1, not only structure is complicated, and be not easy by laser beam accurately from
Dynamic focusing is on the object processed of flat surface consecutive variations, difficult especially in the case where irradiating laser with beam shape
To be directed at focal position on entire long axis direction by auto-focusing.
The present invention is completed above situation as background, and the purpose is to provide a kind of manufacturer of handled object of annealing
Method, laser annealing base station and laser annealing processing unit can keep the flatness of handled object appropriate, energy in the irradiation area of laser
It is made annealing treatment well.
Solve the technical solution of technical problem
That is, first item invention is to irradiate laser to handled object in the manufacturing method of annealing handled object of the invention
Carry out the manufacturing method of the annealing handled object of the annealing of the handled object characterized by comprising
Support the holding step of the handled object；And the irradiating step of the laser is irradiated to the handled object supported,
In the holding step, at least in the irradiation area to handled object irradiation laser, adjusted using by rotation position
The cam member of upper end level position supports the handled object.
The manufacturing method of the annealing handled object of Section 2 invention is characterized in that, in the first item invention, in institute
It states in irradiating step, to the handled object relative scanning and the laser is irradiated, in the holding step, along with described
The relative scanning of laser at least supports the handled object for being located at laser-irradiated domain using the cam member.
The manufacturing method of the annealing handled object of Section 3 invention is characterized in that, is invented in the first item or Section 2
In, comprising: the determination step that the height and position for the handled object for being located at the laser-irradiated domain is measured；And it is based on
The height and position being measured to determines the height and position set-up procedure of the rotation position of the cam member.
The laser annealing base station of Section 4 invention, which is characterised by comprising, supports the handled object of illuminated laser
Supporting part, the supporting part includes cam member, which at least corresponds in the laser irradiation to handled object
Irradiation area support the handled object from lower face side；And make the cam rotary driving part of the cam member rotation.
The laser annealing base station of Section 5 invention is characterized in that, in the Section 4 invention, has scanning means, should
Scanning means makes a relative move the handled object relative to the laser, carries out the scanning of the laser, the cam
Component at least carries out the bearing to the handled object for being located at laser-irradiated domain along with the scanning of the laser.
The laser annealing base station of Section 6 invention is characterized in that, in the Section 5 invention, the cam member tool
Irradiation position relative to the laser is fixed setting position, other supporting parts without cam member can with it is described
Handled object moves together.
The laser annealing base station of Section 7 invention is characterized in that, is invented in any one of the Section 4~Section 6
In, comprising: analyzer, the analyzer at least correspond to the irradiation area of the laser irradiation to measure the height of the handled object
Spend position；And the control unit of the control cam rotary driving part, the control unit receive the measurement result of the analyzer,
And carried out based on the measurement result control as follows: adjusting the rotation position of the cam member, the handled object is adjusted to
Prespecified height and position.
The laser annealing base station of Section 8 invention is characterized in that, in the Section 6 invention, in the handled object
Lower surface direction on there are multiple cam members, the control unit can make each cam member or by multiple cam structures
Each group of the group that part is constituted independently changes rotation position.
The laser annealing base station of Section 9 invention is characterized in that any one in the Section 4~Section 8 is sent out
In bright, the cam member contiguously supports the handled object with the handled object.
The laser annealing base station of Section 10 invention is characterized in that any one in the Section 4~Section 9 is sent out
In bright, the cam member supports the handled object by gas suspension.
The laser annealing base station of Section 11 invention is characterized in that, in the Section 10 invention, the cam member
At least gas blowout surface side be made of porous material.
The laser annealing base station of Section 12 invention is characterized in that, in the Section 10 or Section 11 invention, institute
Cam member is stated with air blowing portion, where is the rotation position of the no matter described cam member in the air blowing portion, all makes from cam member
The gas of blowout is in surface side and handled object following table face contact.
The laser annealing base station of Section 13 invention is characterized in that, any one in the Section 7~Section 12
In item invention, the laser is shaped to beam shape and is irradiated on the handled object, and the cam member swashs along described
The long axis direction of light is configured with multiple.
The laser annealing processing unit of Section 14 invention, which is characterised by comprising, is documented in the Section 4~13rd
The laser annealing base station of any one invention in；Export the laser light source of laser；And optical system, the optical system are drawn
Lead the laser and by the laser irradiation on the handled object supported by the laser annealing base station.
Invention effect
As described above, according to the present invention, it has the effect that aobvious for liquid crystal display or organic EL
During the handled object irradiation laser for showing laser processing object of device etc., the surface that can simply adjust handled object is high
Laser beam, is accurately registered near the focal position of lens, so as to irradiate identical light beam always, makes to processed by degree
The annealing that body carries out is uniform, and improves irradiation result.
Detailed description of the invention
Fig. 1 is the annealing base station for showing an embodiment of the invention and an embodiment for having the annealing base station
Laser annealing processing unit schematic diagram.
Fig. 2 is the figure of the figure for showing cam member and driving motor in same embodiment and the state of cam member rotation.
Fig. 3 is the figure of the positional relationship of supporting part and cam member during the laser scanning shown in same embodiment.
Fig. 4 is the figure of the positional relationship of supporting part and cam member during the laser scanning shown in same embodiment.
Fig. 5 is the figure of the positional relationship of supporting part and cam member during the laser scanning shown in same embodiment.
Fig. 6 is the annealing base station for showing another embodiment of the invention and an embodiment for having the annealing base station
The schematic diagram of laser annealing processing unit.
Fig. 7 is the figure for showing cam member and driving motor in same embodiment.
Fig. 8 is the figure for showing the positional relationship of supporting part and cam member in same embodiment.
Specific embodiment
Hereinafter, being based on Fig. 1, the annealing base station of an embodiment of the invention is moved back with the laser for having the annealing base station
Fiery processing unit is illustrated.
Laser annealing processing unit 1 has process chamber 2, and scanning means 3 is provided in process chamber 2.Scanning means 3 has can be
The scanning direction moving portion 30 moved in X-direction (scanning direction).It is provided in scanning direction moving portion 30 and scanning direction
Multiple supporting parts 4 that moving portion 30 moves together.It is spaced one from compartment of terrain in X-direction, Y-direction and is configured with multiple supporting parts 4,
Its top is the setting unit for placing handled object.Preferably in 1, supporting part 4 is formed as column, and top surface is setting
Portion.
Scanning direction moving portion 30 can be moved along on the pedestal of process chamber 2 towards the guiding piece etc. that X-direction is extended, and be scanned
Direction moving portion 30 is driven by motor (not shown) etc., and supporting part 4 can be made to move on the scanning direction of laser.In addition, sweeping
Retouching direction moving portion 30 can also move in the Y direction and change irradiation position.
In addition, the lower side of the irradiation area in irradiation laser, (direction orthogonal with scanning direction) is configured along the Y direction
There is cam member 5.Cam member 5 constitutes a part of supporting part of the invention.Cam member 5 is not located at supporting part 4 and is moved
On the route of dynamic X-direction, but it is provided at spaced intervals along the Y direction multiple.As a result, supporting part 4 with scanning direction
When moving portion 30 moves together, cam member 5 will not be interfered.It is linked with respectively on each cam member 5 for adjusting cam
The driving motor 6 of the rotation position of component 5.Stepping motor can be used as driving motor 6.Driving motor 6 is equivalent to this hair
Bright cam rotary driving part.The type of cam rotary driving part is not particularly limited.Cam member 5 is in its top side to being located
Reason body is supported, but the position at the top of it and height can be changed with the rotation of cam member 5.Rotation position can change
For arbitrary position, in addition, rotation position can also be selected from prespecified multiple positions to change.
The scanning means 3, supporting part 4, cam member 5, drive motor for having above-mentioned scanning direction moving portion 30, guiding piece etc.
6 be the constituent element of annealing base station of the invention.
In addition, the present invention will not necessarily have multiple cam members 5.
In addition, being provided with the importing window 7 for being externally introduced harness in process chamber 2.
The lower side of importing window 7 in process chamber 2, is provided with the spraying canister 8 for surrounding the optical path of laser 150, in spraying canister 8
Lower face side is formed with the through portions such as the hole for laser light.
In addition, being provided in the lower face side of spraying canister 8 to the upper surface for carrying out mobile handled object positioned at lower side
The height finder 9 that height is measured.Height finder 9 for example continually or intermittently surveys the height in measurement place
It is fixed.The structure of height finder 9 is not particularly limited, and is surveyed using the height to handled object such as such as optical sensor
It is fixed.Height finder 9 is equivalent to analyzer of the invention.In addition, height finder 9 can laser 150 irradiation position or
The irradiation position is nearby measured the height and position of handled object, is not limited to spraying canister 8, can be set in appropriate position
It sets, can also be measured in multiple positions.In the case where the laser of irradiation is harness, it is desirable to along the short-axis direction (side Y
To) measurement handled object position, height finder 9 can be used line sensor or use multiple sensors.
In laser treatment, in scanning direction, the center of moving portion 30 is provided with semiconductor substrate 100, the semiconductor substrate
100 are formed with amorphous silicon film on glass substrate etc..Semiconductor substrate 100 is equivalent to handled object of the invention.In addition, conduct
The present invention, handled object are not limited to semiconductor substrate.
In addition, the laser annealing processing unit 1 of embodiment 1 is moved back as with the laser for crystallizing amorphous film by laser treatment
Fire handles relevant device to be illustrated, but the content as laser treatment of the invention is not limited to the knot of amorphous film
Crystalline substance, such as can be and single crystallization is carried out to the semiconductor film of on-monocrystalline or carries out the modification of crystalline semiconductor film.In addition, can also
Be it is related to other processing, as described above, handled object is not particularly limited.
The outside of process chamber 2 is provided with laser light source 10.Laser light source 10 can be output pulsed oscillation laser, continuous
The laser light source of any one laser in oscillating laser can also be with as the present invention is not limited to a certain laser light source
Use a variety of laser light sources.But in present embodiment 1, it is preferable to use the higher pulsed oscillation laser of energy density.This
In embodiment 1, as pulsed oscillation laser, illustrated such as wavelength 400nm or less, below 200 nanosecond of pulse halfwidth
Laser light source.
The laser 15 for the pulse type that laser light source 10 exports adjusts its energy density using attenuator 11 as needed, and passes through
The optical system 12 comprising reflecting mirror 12a, condenser lens 12b, reflecting mirror 12c etc. is crossed, carrying out shaping or deflection etc. becomes harness
Shape etc., and projected as laser 150.In addition, the optical component for constituting optical system 12 is not limited to above-mentioned defined light
Component is learned, can suitably have various lens, reflecting mirror, waveguide section etc..The cross sectional shape of beam shape is not particularly limited, but
The length of the illustrated short axis width for example on the shadow surface of handled object of energy is 100 μm~500 μm, the length of long axis width
For 370~1300mm.
In present embodiment 1, the beam cross-section shape for the laser 150 for being radiated at handled object is set as beam shape to carry out
Illustrate, but as the present invention is not limited to this, moreover it is possible to be set as the shot shape appropriate such as dotted, round, rectangle.
In addition, including at least controlling scanning means 3, driving motor 6, laser light respectively in laser annealing processing unit 1
Source 10, attenuator 11 control unit 16.Control unit 16 can be made of CPU, the program, the storage unit that make CPU progress compulsory exercise etc..
Scanning means 3 can be such that scanning direction moving portion 30 moves together with fixing speed and supporting part 4 under the control of control unit 16
It is dynamic.Fixing speed is not particularly limited, and can be exemplified by such as 1~100mm/ seconds.In addition it is also possible to make scanning means 3 in the Y direction
Scan position is changed in upper movement.
In control unit 16, it can control laser light source 10 with defined output and export laser 15, and can control decaying
Device 11 is radiated on handled object to control laser 150 with defined energy density.Energy density energy on handled object according to
The purpose etc. of annealing is set as value appropriate.
Then, cam member 5 is illustrated based on Fig. 2.
Fig. 2 is the main view for observing a cam member 5 in view in the Y direction, and upper face has inclined curved shape.It is convex
Taking turns component 5 has rotary shaft along the Y direction in lower side, and driving motor 6 is linked in the rotary shaft, passes through driving motor
6 can be such that cam member 5 rotates along the rotary shaft.As shown in the following figure of Fig. 2, if cam member 5 rotates, maximum height
Position changes.Preferably in 1, semiconductor substrate 100 is supported in the upper surface side of cam member 5, therefore
The height and position of 5 semiconductor-on-insulator substrate 100 of cam member changes according to the rotation position of cam member 5.By by cam
Component 5 be configured at laser 150 underface or its near, so as to according to the spinning movement of cam member 5 adjust by laser 150
The height and position of the semiconductor substrate 100 of irradiation.In addition, the upper surface of cam member 5 has been not necessarily to curved shape, inclination
Angle can change steppedly.
Then, the movement of laser annealing processing unit 1 is illustrated.
In laser light source 10, by the control of control unit 16, impulse hunting is carried out with defined repetition rate, to provide to export
To export laser 15.Illustrated laser 15 is such as wavelength 400nm or less, below 200 nanosecond of pulse halfwidth.But make
For the present invention, it's not limited to that for laser.
The pulse energy density of laser 15 is adjusted using the attenuator 11 controlled by control unit 16.As defined in attenuator 11 is set
Attenuation rate, and attenuation rate is adjusted, make it possible to obtain to be most suitable for the radiation pulses of crystallization on the shadow surface of semiconductor substrate 100
Energy density.Such as amorphous silicon film carries out in the case where crystallizing etc., can be carried out and adjusts the energy density so that on its shadow surface
For 250~500mJ/cm2。
Beam shape is shaped to using the laser 15 that optical system 12 will transmit through attenuator 11 and to the short of the laser 15
Axial extent is focused, and the importing window 6 for being set to process chamber 2 is imported into as line beam laser 150.
Such as harness is shaped to the length of long axis side as 370~1300mm, the length of short axle side is 100 μm~500 μm.
By keeping semiconductor substrate 100 mobile with defined scanning speed using by the scanning means 3 that control unit 16 controls,
To relatively scan line beam laser 150 to semiconductor substrate 100, and line beam laser 150 is irradiated to semiconductor substrate 100
On.Scanning speed at this time was set as in the range of such as 1~100mm/ seconds.But as the present invention, the scanning speed is had no
It is particularly limited to.
Sweep spacing is not limited to specific numerical value, can include such as 5~15 μm of range.In addition, as the present invention, energy
Laser is made a relative move relative to semiconductor substrate 100 by mobile laser.The movement of laser, which can for example utilize, to be made to swash
Light by the mobile etc. of optical fiber carry out.
Then, the movement of supporting part 4 when irradiating above-mentioned laser 150 is illustrated.
Preferably in 1, the height and position of semiconductor substrate 100 is measured using height finder 9, and by measurement result
Pass out to control unit 16.Control unit 16 controls driving motor 6 based on measurement result to adjust the rotation position of cam member 5, makes
It obtains semiconductor substrate 100 and is located at defined height and position.Therefore, it is intended that configuring height finder 9 in the position than cam member 5
Set the rotation position that measurement result is more reflected in by the direction of transfer upstream side of semiconductor substrate 100 cam member 5
It sets in adjustment and irradiates laser 150 and as close to the position of cam member 5.Fixed value can be used in specified altitude position,
Also the value set according to the scanning direction of semiconductor substrate 100 can be used, in short, can be by the height of semiconductor substrate 100
It adjusts to prespecified height and position.
In addition, the cam member 5 that can be whole or part carries out in the multiple cam members 5 configured along the Y direction
Identical movement, or can also individually adjust rotation position.Feelings in the rotation position for individually adjusting cam member 5
Under condition, the measurement knot being measured to by height finder 9 can be used respectively in the position corresponding with each cam member 5
Fruit can be adjusted to uniform height and position in short-axis direction (Y-direction).In this case, height finder 9 can be in the side Y
Height and position is continuously measured upwards, it can also be in multiple Site Determination height and positions.
Fig. 3 is to show when semiconductor substrate 100 is moved using scanning direction moving portion 30, semiconductor substrate 100
X-direction front end side reach cam member 5 state.In addition, omitting the diagram of semiconductor substrate 100 in attached drawing.
In the figure, the X-direction front end side of semiconductor substrate 100 is adjusted to by defined height by the rotation of cam member 5,
In focal position appropriate, irradiation laser 150 carries out good annealing.
Semiconductor substrate 100 is moved in the X direction by scanning direction moving portion 30, and irradiation swashs in focal position appropriate
Light 150.
Fig. 4 shows the persistently movement of semiconductor substrate 100, and the X-direction middle section of semiconductor substrate 100 is located on cam member 5
And the state of height adjustment is carried out, Fig. 5 shows the persistently movement of semiconductor substrate 100, the X-direction rear end side of semiconductor substrate 100
The state of height adjustment is carried out on cam member 5.During this period, cam member 5 is located at fixed position, relative to irradiation
The fixed laser 150 in position carries out the height adjustment of semiconductor substrate 100 in identical position.
In addition, in a scanning direction, the irradiation of the second row if it exists utilizes mobile dress (not shown) then after the first row
It sets 100 transverse shifting of semiconductor substrate.To the semiconductor substrate for carrying out transverse shifting, above-mentioned semiconductor substrate is carried out
Mobile and laser irradiation.After the completion of the entire glass surface treatment of semiconductor substrate, next piece of substrate is handled.
In addition, in the above description, along the Y direction there is the case where rotary shaft to be illustrated cam member 5, it can also
To have relative to X-direction, Y-direction in the inclined rotary shaft in horizontal plane direction.Cam member 5 can also have relative to vertical
The inclined rotary shaft in direction, can also have multiple rotary shafts and each rotary shaft can carry out rotation adjustment, can also utilize
It is freely rotatable axis and rotation adjustment is carried out to cam member 5.
In addition, cam member 5 and semiconductor substrate 100 adjust height and position in contact preferably in 1.?
When semiconductor substrate 100 is mobile, semiconductor substrate 100 can slide on cam member 5, in addition it is also possible in cam member 5
Upper setting rotational roller etc. moves semiconductor substrate 100.Also, it can also be by being carried out in semiconductor substrate 100
Rotate cam member 5 when mobile, to temporarily release and the contact of semiconductor substrate 100.
As described above, the height and position of semiconductor substrate 100, semiconductor can simply and accurately be adjusted using cam member 5
The focal position of substrate 100 and laser has positional relationship appropriate, can be made annealing treatment well.
In addition, as supporting part, there is supporting part 4 and cam member 5, only supporting part 4 carries out preferably in 1
It is mobile, therefore supporting structure can be split, so that mobile side is become smaller, can be reduced the weight in mobile side, the flatness on surface,
Shaking when mobile, it is mobile when the drawbacks such as the deviation of speed.
In addition, can be all supporting parts is moved, the shifting without being partitioned into scanning means in present embodiment 1
Dynamic side.In this case, the multiple supporting parts configured in X-direction are set as with cam member structure, make half with scanning means 3
The movement of conductor substrate 100 utilizes corresponding cam member 5 in the irradiation area of laser 150, passes through the rotation of cam member 5
Carry out the height adjustment of semiconductor substrate 100.
In addition, in above embodiment 1, although pushing semiconductor substrate 100 directly right using supporting part 4, cam member 5
It is supported, but can also be set as spraying gas upwards using supporting part makes semiconductor substrate suspend to support to it
Structure.Hereinafter, being illustrated to the embodiment 2.
Fig. 6 shows the another embodiment i.e. laser machining device of embodiment 2.In addition, to above embodiment
Identical structure marks identical label, its explanation is omitted or simplified.
In embodiment 2, the fixed device 20 of supporting part is arranged in process chamber 2, along the side X on the fixed device 20 of supporting part
Multiple supporting parts 24 are fixedly installed to Y-direction.In addition, the lower side of the irradiation position in irradiation laser 150, along the side Y
To configured with cam member 25.The rotary shaft and driving motor 26 of cam member 25 link, and driving motor 26 is equivalent to the present invention
Rotary driving part.
In supporting part 24, by blowing out levitation gas upwards, semiconductor substrate 100 is made to be suspended in distance air blowing position
For the position of specified altitude.
In addition, setting blow-out position in cam member 25 according to its rotation position, air blowing being set to use up from cam member 25
It may be towards surface blow gas.
As the present invention, the type of levitation gas is not particularly limited, such as can use the non-active gas such as nitrogen.
Fig. 7 is an example for showing cam member 25, is that there are three the Porous knots of inflatable mouth 27A, 27B, 27C for setting
Structure.In each inflatable mouth, valve mechanism can be set in inflatable mouth or carry out the switching etc. of air blowing access connection, thus only can be from root
According to cam member 25 inflatable mouth blow gas from rotation position to blow gas right above most.As a result, cam member 25 into
When row rotation, semiconductor substrate 100 can be made to be suspended at the inflatable mouth specified altitude apart from directly on top side, can be carried out
The height of semiconductor substrate 100 adjusts.
In addition, in the multiple cam members 25 configured along the Y direction, can be the cam member 25 of whole or part into
The identical movement of row, or can also individually adjust rotation position.Individually adjusting the rotation position of cam member 25
In the case of, the survey being measured to by height finder 9 can be used respectively in the position corresponding of each cam member 25
Determine result.In this case, height finder 9 can continuously measure height and position in the Y direction, can also be at multiple positions
Measure height and position.
In addition, in the above description, along the Y direction there is the case where rotary shaft to be illustrated cam member 25,
It can have relative to X-direction, Y-direction in the inclined rotary shaft in horizontal plane direction.Also, cam member 25 can have relatively
In the inclined rotary shaft of vertical direction, it can have multiple rotary shafts and each rotary shaft can carry out rotation adjustment, it can be with
Rotation adjustment is carried out to cam member 25 using axis is freely rotatable.
As described above, if not needing to keep supporting part side mobile using the mechanism for making handled object suspend.In addition, swashing
The irradiation area of light can eliminate the influence of the reflection of side from below.Also, since handled object is not contacted with supporting part, because
This can inhibit to generate particle or electrostatic, improve processing quality.
In addition, in above embodiment the height of inflatable mouth can be adjusted by cam member, therefore can be reduced the blowout of gas
Amount.If increasing the suspension amount of gas blowout, the handled object of gas suspension is easy to rock, but can inhibit this according to the present embodiment
It shakes.
Fig. 8 shows the state that laser 150 is irradiated to the semiconductor substrate (not shown) of gas suspension.Semiconductor substrate 100
Mobile (can not scheme by pushing semiconductor substrate 100 or using grasp semiconductor substrate 100 and carry out mobile mobile device
Show) etc. carry out.
The height of semiconductor substrate 100, and semiconductor substrate 100 and laser are adjusted by cam member 25 in irradiation area
150 focal position has positional relationship appropriate, to irradiate laser 150 to semiconductor substrate 100 and carry out good move back
Fire processing.
In addition, be fixed the case where promoting the circulation of qi of going forward side by side suspends to all supporting parts in embodiment 2 and be illustrated,
But the component other than cam member 25 only can carry out gas suspension in cam member 25 using mobile structure.
More than, based on the respective embodiments described above, the present invention is described, but as long as not departing from the scope of the present invention, when
Can so change appropriate be carried out to embodiment.
Label declaration
1 laser machining device
1a laser machining device
2 process chambers
3 scanning means
4 supporting parts
5 cam members
6 driving motors
7 insertion windows
8 spraying canisters
9 height finders
10 laser light sources
12 optical systems
15 laser
16 control units
24 supporting parts
25 cam members
26 driving motors
30 scanning direction moving portions
100 semiconductor substrates
150 laser.
Claims (14)
1. a kind of manufacturing method for handled object of annealing, the annealing of the handled object is carried out to handled object irradiation laser,
It is characterised by comprising:
Support the holding step of the handled object；And
The irradiating step of the laser is irradiated to the handled object supported,
In the holding step, at least in the irradiation area to handled object irradiation laser, using passing through rotation position
The cam member of upper end level position is adjusted to support to the handled object.
2. the manufacturing method of annealing handled object as described in claim 1, which is characterized in that
In the irradiating step, to the handled object relative scanning and the laser is irradiated,
In the holding step, along with the relative scanning of the laser, using the cam member at least to positioned at laser
The handled object of irradiation area supported.
3. the manufacturing method of annealing handled object as claimed in claim 1 or 2, which is characterized in that further include:
The determination step that the height and position of the handled object for the irradiation area for being located at the laser is measured；And
The height and position set-up procedure of the rotation position of the cam member is determined based on the height and position being measured to.
4. a kind of laser annealing base station, which is characterized in that
With multiple supporting parts that the handled object to laser irradiation is supported,
At least part of the supporting part includes cam member, which at least corresponds to the laser irradiation to quilt
The irradiation area handled on body supports the handled object from lower face side；And make the cam rotation of the cam member rotation
Driving portion.
5. laser annealing base station as claimed in claim 4, which is characterized in that
Also there is scanning means, which make a relative move the handled object relative to the laser, carries out institute
The scanning of laser is stated,
The cam member along with the laser scanning, at least to be located at laser irradiation area the handled object into
The row bearing.
6. laser annealing base station as claimed in claim 5, which is characterized in that
The cam member has the setting position fixed relative to the irradiation position of the laser, without its of cam member
He can move together supporting part with the handled object.
7. the laser annealing base station as described in any one of claim 4 to 6, which is characterized in that further include:
Analyzer, the analyzer at least correspond to the irradiation area of the laser irradiation and measure the height position of the handled object
It sets；And
The control unit of the cam rotary driving part is controlled,
The control unit receives the measurement result of the analyzer, and is carried out control as follows based on the measurement result: described in adjustment
The handled object is adjusted to prespecified height and position by the rotation position of cam member.
8. laser annealing base station as claimed in claim 6, which is characterized in that
There are multiple cam members on the lower surface direction of the handled object, the control unit can be to each cam
Each group of component or the group being made of multiple cam members independently changes rotation position.
9. the laser annealing base station as described in any one of claim 4 to 8, which is characterized in that
The cam member contiguously supports the handled object with the handled object.
10. the laser annealing base station as described in any one of claim 4 to 9, which is characterized in that
The cam member supports the handled object by gas suspension.
11. laser annealing base station as claimed in claim 10, which is characterized in that
At least gas blowout surface side of the cam member is made of porous material.
12. laser annealing base station as described in claim 10 or 11, which is characterized in that
The cam member has air blowing portion, and where is the rotation position of the no matter described cam member in the air blowing portion, all makes from convex
The gas of component blowout is taken turns in surface side and handled object following table face contact.
13. the laser annealing base station as described in any one of claim 7 to 12, which is characterized in that
The laser is shaped to beam shape and is irradiated on the handled object, and the cam member is along the laser
Long axis direction is configured with multiple.
14. a kind of laser annealing processing unit characterized by comprising
Laser annealing base station as described in any one of claim 4 to 13；
Export the laser light source of laser；And
Optical system, the optical system guide the laser and are supporting by the laser annealing base station laser irradiation
On handled object.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016205777 | 2016-10-20 | ||
| JP2016-205777 | 2016-10-20 | ||
| PCT/JP2017/036656 WO2018074281A1 (en) | 2016-10-20 | 2017-10-10 | Method for manufacturing annealed body, laser anneal base stage, and laser anneal device |
Publications (2)
| Publication Number | Publication Date |
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| CN109863577A true CN109863577A (en) | 2019-06-07 |
| CN109863577B CN109863577B (en) | 2023-07-04 |
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| Country | Link |
|---|---|
| US (1) | US11938563B2 (en) |
| JP (1) | JP6990171B2 (en) |
| CN (1) | CN109863577B (en) |
| WO (1) | WO2018074281A1 (en) |
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| WO2019151543A1 (en) * | 2018-01-30 | 2019-08-08 | 류정도 | Heating device for heating object material using laser beam and indirect heating method using laser beam |
| JP7336465B2 (en) * | 2018-05-08 | 2023-08-31 | ラム リサーチ コーポレーション | Atomic Layer Etching and Atomic Layer Deposition Processing Systems Including Telecentric Lenses, Optical Beam Folding Assemblies, or Lens Circuits with Polygon Scanners |
| US11091522B2 (en) | 2018-07-23 | 2021-08-17 | Aileron Therapeutics, Inc. | Peptidomimetic macrocycles and uses thereof |
| JP7412111B2 (en) * | 2019-08-29 | 2024-01-12 | Ｊｓｗアクティナシステム株式会社 | Laser processing equipment and semiconductor device manufacturing method |
| CN117464209A (en) * | 2023-11-17 | 2024-01-30 | 海目星激光科技集团股份有限公司 | Battery welding device and method |
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Also Published As
| Publication number | Publication date |
|---|---|
| US11938563B2 (en) | 2024-03-26 |
| JPWO2018074281A1 (en) | 2019-08-22 |
| US20190255650A1 (en) | 2019-08-22 |
| JP6990171B2 (en) | 2022-01-12 |
| WO2018074281A1 (en) | 2018-04-26 |
| CN109863577B (en) | 2023-07-04 |
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